CN104160478B - 在非天然表面上形成具有减小的表面粗糙度和体缺陷密度的异质层的方法以及由此形成的结构 - Google Patents
在非天然表面上形成具有减小的表面粗糙度和体缺陷密度的异质层的方法以及由此形成的结构 Download PDFInfo
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- CN104160478B CN104160478B CN201180076458.XA CN201180076458A CN104160478B CN 104160478 B CN104160478 B CN 104160478B CN 201180076458 A CN201180076458 A CN 201180076458A CN 104160478 B CN104160478 B CN 104160478B
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Classifications
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/0245—Silicon, silicon germanium, germanium
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- H01L21/02494—Structure
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- Power Engineering (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2011/067661 WO2013101001A1 (en) | 2011-12-28 | 2011-12-28 | Methods of forming hetero-layers with reduced surface roughness and bulk defect density on non-native surfaces and the structures formed thereby |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104160478A CN104160478A (zh) | 2014-11-19 |
CN104160478B true CN104160478B (zh) | 2017-02-15 |
Family
ID=48698242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180076458.XA Active CN104160478B (zh) | 2011-12-28 | 2011-12-28 | 在非天然表面上形成具有减小的表面粗糙度和体缺陷密度的异质层的方法以及由此形成的结构 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9711591B2 (zh) |
CN (1) | CN104160478B (zh) |
DE (1) | DE112011106054B4 (zh) |
TW (2) | TWI556287B (zh) |
WO (1) | WO2013101001A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2717316B1 (en) * | 2012-10-05 | 2019-08-14 | IMEC vzw | Method for producing strained germanium fin structures |
US9484423B2 (en) | 2013-11-01 | 2016-11-01 | Samsung Electronics Co., Ltd. | Crystalline multiple-nanosheet III-V channel FETs |
US9570609B2 (en) | 2013-11-01 | 2017-02-14 | Samsung Electronics Co., Ltd. | Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same |
CN106030758B (zh) * | 2014-03-28 | 2020-07-17 | 英特尔公司 | 选择性外延生长的基于iii-v材料的器件 |
US9647098B2 (en) | 2014-07-21 | 2017-05-09 | Samsung Electronics Co., Ltd. | Thermionically-overdriven tunnel FETs and methods of fabricating the same |
KR20170076771A (ko) * | 2014-10-30 | 2017-07-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 민감성 및 반응성 층들을 구비하는 필름 스택을 개선하기 위한 방법 및 구조물 |
US9478660B2 (en) * | 2015-01-12 | 2016-10-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Protection layer on fin of fin field effect transistor (FinFET) device structure |
US9590107B2 (en) | 2015-06-25 | 2017-03-07 | International Business Machines Corporation | III-V gate-all-around field effect transistor using aspect ratio trapping |
EP3133046A1 (en) * | 2015-08-17 | 2017-02-22 | IMEC vzw | Al-poor barrier for ingaas semiconductor structure |
JP6810406B2 (ja) | 2016-12-06 | 2021-01-06 | 株式会社サイオクス | 窒化物半導体テンプレートの製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5659188A (en) * | 1988-10-28 | 1997-08-19 | Texas Instruments Incorporated | Capped anneal |
US6165894A (en) * | 1998-07-09 | 2000-12-26 | Advanced Micro Devices, Inc. | Method of reliably capping copper interconnects |
US6878610B1 (en) * | 2002-08-27 | 2005-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Relaxed silicon germanium substrate with low defect density |
CN1816910A (zh) * | 2003-05-30 | 2006-08-09 | 国际商业机器公司 | 使用氧化、减薄和外延再生长的组合的SiGe晶格工程学 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EA004506B1 (ru) | 2000-06-08 | 2004-04-29 | Крейг Джеймсон Бэйлли | Усовершенствованный светящийся материал |
US6649492B2 (en) | 2002-02-11 | 2003-11-18 | International Business Machines Corporation | Strained Si based layer made by UHV-CVD, and devices therein |
WO2004034453A1 (en) * | 2002-10-04 | 2004-04-22 | Silicon Genesis Corporation | Method for treating semiconductor material |
WO2004068556A2 (en) | 2003-01-27 | 2004-08-12 | Amberwave Systems Corporation | Semiconductor structures with structural homogeneity |
US20050196925A1 (en) * | 2003-12-22 | 2005-09-08 | Kim Sang H. | Method of forming stress-relaxed SiGe buffer layer |
US8274097B2 (en) * | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
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2011
- 2011-12-28 US US13/997,607 patent/US9711591B2/en active Active
- 2011-12-28 DE DE112011106054.8T patent/DE112011106054B4/de active Active
- 2011-12-28 WO PCT/US2011/067661 patent/WO2013101001A1/en active Application Filing
- 2011-12-28 CN CN201180076458.XA patent/CN104160478B/zh active Active
-
2012
- 2012-12-14 TW TW104128113A patent/TWI556287B/zh not_active IP Right Cessation
- 2012-12-14 TW TW101147483A patent/TWI506676B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5659188A (en) * | 1988-10-28 | 1997-08-19 | Texas Instruments Incorporated | Capped anneal |
US6165894A (en) * | 1998-07-09 | 2000-12-26 | Advanced Micro Devices, Inc. | Method of reliably capping copper interconnects |
US6878610B1 (en) * | 2002-08-27 | 2005-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Relaxed silicon germanium substrate with low defect density |
CN1816910A (zh) * | 2003-05-30 | 2006-08-09 | 国际商业机器公司 | 使用氧化、减薄和外延再生长的组合的SiGe晶格工程学 |
Also Published As
Publication number | Publication date |
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TWI556287B (zh) | 2016-11-01 |
CN104160478A (zh) | 2014-11-19 |
WO2013101001A1 (en) | 2013-07-04 |
DE112011106054T5 (de) | 2014-09-11 |
US20140203326A1 (en) | 2014-07-24 |
US9711591B2 (en) | 2017-07-18 |
TW201545209A (zh) | 2015-12-01 |
TWI506676B (zh) | 2015-11-01 |
TW201349292A (zh) | 2013-12-01 |
DE112011106054B4 (de) | 2023-05-25 |
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Inventor after: Mukherjee Niloy Inventor after: Tolchinsky Peter G. Inventor after: Kavalieros Jack T. Inventor after: Chau Robert S Inventor after: Metz Matthew V. Inventor after: JM Bauer this Inventor after: Le Van H. Inventor after: B Zhu Gong Inventor after: MR strangles plum Inventor after: Radosavljevic Marko Inventor after: N Ge Aier Inventor after: L *zhou Inventor before: Mukherjee Niloy Inventor before: Tolchinsky Peter G. Inventor before: Kavalieros Jack T. Inventor before: Chau Robert S Inventor before: Metz Matthew V. Inventor before: JM Bauer this Inventor before: Le Van H. Inventor before: B Zhu-Jin Inventor before: MR strangles plum Inventor before: Radosavljevic Marko Inventor before: N Ge Aier Inventor before: L *zhou |