CN104157797B - A kind of method preparing organic luminescent device - Google Patents
A kind of method preparing organic luminescent device Download PDFInfo
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- CN104157797B CN104157797B CN201410386522.XA CN201410386522A CN104157797B CN 104157797 B CN104157797 B CN 104157797B CN 201410386522 A CN201410386522 A CN 201410386522A CN 104157797 B CN104157797 B CN 104157797B
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 362
- 239000010410 layer Substances 0.000 claims abstract description 359
- 239000002019 doping agent Substances 0.000 claims abstract description 155
- 239000002346 layers by function Substances 0.000 claims abstract description 103
- 238000000151 deposition Methods 0.000 claims abstract description 78
- 230000005540 biological transmission Effects 0.000 claims abstract description 42
- 230000005525 hole transport Effects 0.000 claims abstract description 28
- 230000008021 deposition Effects 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- -1 wherein Substances 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 3
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 2
- YMHFIWZRDQFZLW-UHFFFAOYSA-N CC1=C(C(C=CC1=O)=O)C.N#CC#N Chemical compound CC1=C(C(C=CC1=O)=O)C.N#CC#N YMHFIWZRDQFZLW-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
Abstract
The invention provides a kind of method preparing organic luminescent device, relate to Display Technique field, solve existing doped layer formation process and equipment is complicated, uniform doping is poor, the problem of poor effect.A kind of method preparing organic luminescent device, including forming hole function of injecting layer, hole transport functional layer, light emitting functional layer, electric transmission functional layer and electronics function of injecting layer, wherein, in described hole function of injecting layer, hole transport functional layer, light emitting functional layer, electric transmission functional layer and electronics function of injecting layer, at least one of which is doped layer, and described doped layer includes host material and dopant material；The forming method of at least one of which doped layer includes: be sequentially depositing host material and dopant material, forms adjacent host material layer and dopant material layer；Heat described host material layer and dopant material layer.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of side preparing organic luminescent device
Method.
Background technology
OLED (Organic Light Emitting Diode, Organic Light Emitting Diode) display is new one
The display in generation, compared with liquid crystal display, has the advantages such as self-luminous, fast response time, wide viewing angle,
May be used for Flexible Displays, Transparence Display, 3D shows.
OLED display includes: OLED array and organic luminescent device；Wherein organic light emission
The structure of device is as it is shown in figure 1, include: anode 1, negative electrode 7 and organic function layer 10；Wherein have
Machine functional layer 10 can also be further subdivided into: hole function of injecting layer (HIL layer) 2, hole transport
Functional layer (htl layer) 3, light emitting functional layer (EML layer) 4, electric transmission functional layer (ETL layer)
5 and electronics function of injecting layer (EIL layer) 6 etc..Wherein, light emitting functional layer is mainly used in luminescence,
Other functional layers are conductive layer, and its main operation principle is that organic function layer is in anode and negative electrode institute shape
Become under the driving of electric field, injected by carrier and be combined and luminous.
Wherein, organic function layer is generally doped layer, i.e. includes dopant material and host material, passes through
In host material, add dopant material, improve the performance of host material.Such as, hole function of injecting
Layer is doped layer, and dopant material is generally F4-TCNQ (2,3,5,6-tetra-fluoro-7,7 ', 8,8 '-four cyanogen dimethyl
1,4-benzoquinone), host material is generally ZnPc (titanium cyanines zinc), by adding doping in host material
The electric conductivity of Material reinforcement host material.
The method of the existing P/N type doped layer for preparing organic light emission is usually the side of coevaporation
Method, i.e. utilizes two evaporation sources to heat dopant material and host material respectively and makes dopant material and base
Material evaporation mixing, therefore coevaporation is to control doping ratio by the evaporation rate ratio of both control
Example, but the condition affecting evaporation rate is the most, the disengagement area of such as material, material volume etc.,
Therefore evaporation rate difficulty controls, and the mixing uniformity of dopant material and host material is poor, effect of adulterating
The best.
Summary of the invention
Embodiments of the invention provide a kind of method preparing organic luminescent device, solve doped layer
Uniform doping is poor, the problem of poor effect.
For reaching above-mentioned purpose, embodiments of the invention adopt the following technical scheme that
Embodiments provide a kind of method preparing organic luminescent device, including forming hole note
Enter functional layer, hole transport functional layer, light emitting functional layer, electric transmission functional layer and electronics to inject
Functional layer, wherein, described hole function of injecting layer, hole transport functional layer, light emitting functional layer, electricity
In sub-transfer function layer and electronics function of injecting layer, at least one of which is doped layer, and described doped layer includes
Host material and dopant material；The forming method of at least one of which doped layer includes:
It is sequentially depositing host material and dopant material, forms adjacent host material layer and dopant material
Layer；
Heat described host material layer and dopant material layer.
Optionally, described in be sequentially depositing host material and dopant material, form adjacent host material layer
With dopant material layer particularly as follows:
Deposition substrate material, forms one layer of host material layer；
At described host material layer dopant material deposited above, form one layer of dopant material layer.
Optionally, described in be sequentially depositing host material and dopant material, form adjacent host material layer
With dopant material layer particularly as follows:
The deposition substrate material being spaced successively and dopant material, formed Spaced host material layer and
Dopant material layer.
Optionally, the described deposition substrate material being spaced successively and dopant material, form many interlayers
Every host material layer and dopant material layer particularly as follows:
Deposition substrate material, forms the first host material layer；
At described first host material layer dopant material deposited above, form dopant material layer；
Deposition substrate material on described dopant material layer, forms the second host material layer.
Optionally, described heating-up temperature is 50-350 DEG C.
Optionally, it is sequentially depositing host material and the dopant material of at least two-layer doped layer, once
The host material of the described at least two-layer doped layer of heating deposition and dopant material.
Optionally, described at least two-layer doped layer is hole function of injecting layer and hole transport function
Layer；Form described hole function of injecting layer and hole transport functional layer specifically include:
The host material of deposition of hole function of injecting layer and dopant material, form hole function of injecting layer
Host material layer and dopant material layer；
The host material of deposition of hole transfer function layer and dopant material, form hole transport functional layer
Host material layer and dopant material layer；
The hole function of injecting layer of heating deposition and the host material of hole transport functional layer
Layer and dopant material layer.
Optionally, described at least two-layer doped layer is electric transmission functional layer and electronics function of injecting
Layer；Form described electric transmission functional layer and electronics function of injecting layer specifically include:
The host material of deposition electric transmission functional layer and dopant material, form electric transmission functional layer
Host material layer and dopant material layer；
The host material of deposition electronics function of injecting layer and dopant material, form electronics function of injecting layer
Host material layer and dopant material layer；
The electric transmission functional layer of heating deposition and the host material of electronics function of injecting layer
Layer and dopant material layer.
Embodiments of the invention provide a kind of method preparing organic luminescent device, and described method is by depending on
Secondary deposition substrate material and dopant material, form adjacent host material layer and dopant material layer, and add
The described host material layer of heat and dopant material layer are to form doped layer, and it may be used for being formed organic
Each functional layer in active display, and the atom of dopant material and host material is made by heating
At high temperature spreading, the uniform doping of doped layer mesostroma material and dopant material is good, and work
Skill is simple.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below by right
In embodiment or description of the prior art, the required accompanying drawing used is briefly described, it should be apparent that,
Accompanying drawing in describing below is only some embodiments of the present invention, for those of ordinary skill in the art
From the point of view of, on the premise of not paying creative work, it is also possible to obtain the attached of other according to these accompanying drawings
Figure.
Fig. 1 is existing organic luminescent device schematic diagram；
A kind of hole function of injecting layer schematic diagram that Fig. 2 provides for the embodiment of the present invention；
A kind of deposition substrate material being spaced successively that Fig. 3 provides for the embodiment of the present invention and mixing
The method schematic diagram of miscellaneous material；
Fig. 4 is the hole function of injecting layer schematic diagram that the method shown in Fig. 3 is formed；
The deposition substrate material that the another kind that Fig. 5 provides for the embodiment of the present invention is spaced successively and
The method schematic diagram of dopant material；
Fig. 6 is the hole function of injecting layer schematic diagram that the method shown in Fig. 5 is formed；
A kind of formation hole function of injecting layer and hole that Fig. 7 provides for the embodiment of the present invention pass
Transmission function layer；
A kind of formation electric transmission functional layer and electronics that Fig. 8 provides for the embodiment of the present invention are noted
Enter functional layer method schematic diagram；
The manufacture method signal of a kind of organic luminescent device that Fig. 9 provides for the embodiment of the present invention
Figure.
Reference:
1-anode；2-hole function of injecting layer；3-hole transport functional layer；4-light emitting functional layer；5-
Electric transmission functional layer；6-electronics function of injecting layer；7-negative electrode；10-organic function layer；21-substrate
Material layer；22-dopant material layer；211-the first host material layer；212-the second host material layer；
213-the 3rd host material layer；221-the first dopant material layer；222-the second dopant material layer.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is entered
Row clearly and completely describes, it is clear that described embodiment is only a part of embodiment of the present invention,
Rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not having
Have and make the every other embodiment obtained under creative work premise, broadly fall into present invention protection
Scope.
Embodiments provide a kind of method preparing organic luminescent device, including forming hole note
Enter functional layer, hole transport functional layer, light emitting functional layer, electric transmission functional layer and electronics to inject
Functional layer, wherein, hole function of injecting layer, hole transport functional layer, light emitting functional layer, electronics pass
In transmission function layer and electronics function of injecting layer, at least one of which is doped layer, and doped layer includes host material
And dopant material；The forming method of at least one of which doped layer includes:
It is sequentially depositing host material and dopant material, forms adjacent host material layer and dopant material
Layer；
Heated substrate material layer and dopant material layer.
It should be noted that the film layer that doped layer is i.e. formed by the material that at least two is different, one
As at least include host material and dopant material.As it is shown in figure 1, the embodiment of the present invention is with organic functions
Layer includes hole function of injecting layer 2, hole transport functional layer 3, light emitting functional layer 4, electric transmission merit
As a example by ergosphere 5 and electronics function of injecting layer 6, wherein, hole function of injecting layer 2, hole transport
Functional layer 3, light emitting functional layer 4, electric transmission functional layer 5 and electronics function of injecting layer 6
With doped layer.Certainly, organic function layer can also include other thin film or Rotating fields, and the present invention implements
Example is described in detail as a example by above-mentioned organic function layer.And hole function of injecting layer, hole transport merit
Ergosphere, light emitting functional layer, electric transmission functional layer and electronics function of injecting layer can also be undoped
Layer, i.e. hole function of injecting layer, hole transport functional layer, light emitting functional layer, electric transmission functional layer
And at least one of which is doped layer in electronics function of injecting layer, the embodiment of the present invention is mainly with each functional layer
For doped layer, illustrate the manufacture method of doped layer.
The forming method of at least one of which doped layer includes: be sequentially depositing host material and dopant material, shape
Become adjacent host material layer and dopant material layer；Heated substrate material layer and dopant material layer.Specifically
, due to hole function of injecting layer, hole transport functional layer, light emitting functional layer, electric transmission function
Layer and electronics function of injecting layer can be doped layers, it is also possible to be non-doped layer, then at least one of which is mixed
The forming method of diamicton includes: be sequentially depositing host material and dopant material, forms adjacent substrate material
The bed of material and dopant material layer；Heated substrate material layer and dopant material layer, can be that hole is injected merit
Ergosphere, hole transport functional layer, light emitting functional layer, electric transmission functional layer and electronics function of injecting
The method that doped layer in Ceng all uses the embodiment of the present invention to provide is formed, it is also possible to be in doped layer
Part doped layer use the embodiment of the present invention provide method formed.
Be organic material owing to generally forming the material of organic functional layer, i.e. hole function of injecting layer, sky
Cave transfer function layer, light emitting functional layer, electric transmission functional layer and the doping of electronics function of injecting layer
Material and host material are organic material, then when heating the host material layer and dopant material being sequentially depositing
Layer, the atom of dopant material and host material at high temperature spreads, it is achieved the purpose of doping, and atom
The doped layer mesostroma material diffuseed to form and dopant material are uniform, adulterate effective.
It is sequentially depositing host material and dopant material, forms adjacent host material layer and dopant material
Layer, wherein, the deposition sequencing of host material and dopant material is not especially limited, and can be first
Deposition substrate material forms host material layer, and redeposited dopant material forms dopant material layer；Can also
Being that first deposition dopant material forms dopant material layer, redeposited host material forms host material layer.Depend on
Secondary deposition substrate material and dopant material, be to form adjacent host material layer and dopant material
Layer, is so conducive to host material and doping material when heating described host material layer and dopant material layer
The diffusion of material.
Concrete, it is sequentially depositing host material and dopant material can be to be deposited with successively in coater,
Form adjacent host material layer and dopant material layer.Heated substrate material layer and dopant material layer are permissible
Carried out by various methods, include but not limited to using heating plate, baking oven, infrared lamp, flash lamp
And LASER HEATING.
A kind of method preparing organic light emitting display that the embodiment of the present invention provides, described method is led to
Cross and be sequentially depositing host material and dopant material, form adjacent host material layer and dopant material layer,
And heating described host material layer and dopant material layer to form doped layer, it may be used for being formed organic
Each functional layer in active display, and make the atom of dopant material and host material at height by heating
The lower diffusion of temperature, the uniformity of doping is good, and the technique of doping is simple.
Optionally, heating-up temperature is 50-350 DEG C.Certainly, according to its host material of difference in functionality layer and
Dopant material is different, and its preferred heating-up temperature is the most different, the optimum temperature of concrete difference in functionality layer
Glass transition point (T in described functional layer materialgNear).
Optionally, it is sequentially depositing host material and dopant material, forms adjacent host material layer and mix
Miscellaneous material layer particularly as follows:
Deposition substrate material, forms one layer of host material layer；
At host material layer dopant material deposited above, form one layer of dopant material layer.
Concrete, as in figure 2 it is shown, deposition substrate material forms host material layer 21 on anode 1；
Host material layer 21 deposits dopant material and forms dopant material layer 22, by host material layer
21 and dopant material layer 22 heat to form hole function of injecting layer 2.
As in Fig. 2 only to form hole function of injecting layer, and as a example by first deposition substrate material, other merits
Ergosphere is referred to said method.
Optionally, it is sequentially depositing host material and dopant material, forms adjacent host material layer and mix
Miscellaneous material layer particularly as follows:
The deposition substrate material being spaced successively and dopant material, formed Spaced host material layer and
Dopant material layer.
The deposition substrate material being spaced successively and dopant material, can be i.e. deposition substrate material, is formed
One layer of host material layer；At host material layer dopant material deposited above, form one layer of dopant material layer；
At dopant material layer host material deposited above, forming one layer of host material layer, circulation is formed many successively
Interlayer every host material layer and dopant material layer.
Concrete, the deposition substrate material being spaced successively and dopant material, form the substrate of Spaced
Material layer and dopant material layer, can be as shown in Figure 3, Figure 4, including:
Step 301, deposition substrate material, form the first host material layer (211).
Step 302, at described first host material layer (211) dopant material deposited above, form the
One dopant material layer (221).
Step 303, at described first dopant material layer (221) host material deposited above, formed
Second host material layer (212).
Step 304, at described second host material layer (212) dopant material deposited above, formed
Second dopant material layer (222).
Step 305, at described second dopant material layer (222) host material deposited above, formed
3rd host material layer (213).
The deposition substrate material being i.e. spaced and dopant material layer, form three layers of host material of adjacent spaces
Layer and two-layer dopant material layer.Certainly, multilamellar host material layer and dopant material layer can be substrate materials
The bed of material is identical with the number of plies of dopant material layer, it is also possible to be to differ.Shown in Fig. 3 with three layers of substrate
Illustrate as a example by material layer and two-layer dopant material layer.
Preferably, as shown in Figure 5, Figure 6, the described deposition substrate material being spaced successively and doping
Material, form the host material layer of Spaced and dopant material layer particularly as follows:
Step 501, deposition substrate material, form the first host material layer (211).
Step 502, at described first host material layer (211) dopant material deposited above, formation is mixed
Miscellaneous material layer (22).
Step 503, at described dopant material layer (22) host material deposited above, form the second base
Material layer (212).
The deposition substrate material being i.e. spaced and dopant material layer, form the two-layer host material of adjacent spaces
Layer and one layer of dopant material layer, as shown in Figure 6, dopant material layer 22 is positioned at two-layer host material layer
Between (first host material layer 211 and the second host material layer 212).
Optionally, it is sequentially depositing host material and the dopant material of at least two-layer doped layer, once heats
The host material of the described at least two-layer doped layer of deposition and the dopant material of deposition.
Can be i.e. be sequentially depositing hole function of injecting layer, hole transport functional layer, light emitting functional layer,
The host material of at least two one functional layer and mixing in electric transmission functional layer and electronics function of injecting layer
Miscellaneous material, by once heating, at least two one functional layer described in formation, to reduce the number of times of heating,
Simplify processing technology.
Preferably, the embodiment of the present invention is to form hole function of injecting layer, hole transport functional layer, electricity
As a example by the method that sub-transfer function layer and electronics function of injecting layer provide for using the embodiment of the present invention.
Optionally, as it is shown in fig. 7, formation hole function of injecting layer and hole transport functional layer are concrete
Including:
Step 701, the host material of deposition of hole function of injecting layer and dopant material, form hole note
Enter host material layer and the dopant material layer of functional layer.
Step 702, the host material of deposition of hole transfer function layer and dopant material, form hole and pass
The host material layer of transmission function layer and dopant material layer.
Step 703, the hole function of injecting layer of a heating deposition and the base of hole transport functional layer
Material layer and dopant material layer.
I.e. form hole function of injecting layer and hole transport functional layer uses and once heats, relative to dividing
It is not thermally formed hole function of injecting layer and hole transport functional layer, decreases the number of times once heated.
Optionally, as shown in Figure 8, form electric transmission functional layer and electronics function of injecting layer is concrete
Including:
Step 801, the host material of deposition electric transmission functional layer and dopant material, form electronics and pass
The host material layer of transmission function layer and dopant material layer.
Step 802, the host material of deposition electronics function of injecting layer and dopant material, form electronics note
Enter host material layer and the dopant material layer of functional layer.
Step 803, the electric transmission functional layer of a heating deposition and the base of electronics function of injecting layer
Material layer and dopant material layer.
I.e. form electric transmission functional layer and electronics function of injecting layer uses and once heats, relative to dividing
Be not thermally formed electric transmission functional layer and electronics function of injecting layer, decrease once heat time
Number.
Below, the present invention will enumerate a specific embodiment, illustrate that the embodiment of the present invention provides organic
The manufacture method of optical device, as it is shown in figure 9, described method includes:
Step 901, on substrate deposit ITO formed anode.
Concrete, anode can be formed by the method deposition ITO of sputtering.Certainly, anode can also
Formed by deposition other materials.
Step 902, described anode deposits ZnPc (titanium cyanines zinc) form host material layer, then sink
Long-pending F4-TCNQ (2,3,5,6-tetra-fluoro-7,7 ', 8,8 '-four cyanogen dimethyl-parabenzoquinone) forms dopant material layer,
And heat described host material layer and described dopant material layer.
Concrete, can be to utilize laser to irradiate described host material layer and described dopant material layer,
So that host material and dopant material complete doping.Hole can be formed by above-mentioned steps 902 to inject
Functional layer.
Step 903, deposition NPB (N, N '-diphenyl-N, N '-bis-(1-naphthyl)-1,1 '-biphenyl-4,4 '-two
Amine) form hole function of injecting layer.
Concrete, hole transport functional layer can be formed by above-mentioned steps 903.It should be noted that
Above-mentioned hole function of injecting layer is non-doped layer.
Step 904, depositing Al q3(8-hydroxyquinoline aluminum) forms light emitting functional layer and electric transmission
Functional layer.
Concrete, light emitting functional layer and electric transmission functional layer can be by depositing Al q3(8-hydroxyl
Quinoline aluminum) once formed, i.e. can form light emitting functional layer and electric transmission by above-mentioned steps 904
Functional layer.It should be noted that above-mentioned hole function of injecting layer and electric transmission functional layer are non-mixing
Diamicton.
Step 905, deposition LiF (lithium fluoride) form electronics function of injecting layer.
Concrete, electronics function of injecting layer can be formed by above-mentioned steps 905.It should be noted that
Above-mentioned electronics function of injecting layer is non-doped layer.
Step 906, depositing Al (aluminum) form negative electrode.
Can be specifically by deposition metal material, form metallic film, for use as negative electrode.
In above-described embodiment, function of injecting layer in hole is doped layer, and other functional layers are non-doped layer, this
Invention is only described in detail as a example by above-mentioned, and other functional layers can also be doped layer, its making side
Method is referred to the manufacture method of above-mentioned hole function of injecting layer.The making side that the embodiment of the present invention provides
Method is not limited to above-mentioned concrete step, and the making of the organic luminescent device of embodiment of the present invention offer
Method, can be directly used for making OLED.
The above, the only detailed description of the invention of the present invention, but protection scope of the present invention not office
Being limited to this, any those familiar with the art, can in the technical scope that the invention discloses
Readily occur in change or replace, all should contain within protection scope of the present invention.Therefore, the present invention
Protection domain should be as the criterion with described scope of the claims.
Claims (7)
1. the method preparing organic luminescent device, including forming hole function of injecting layer, hole biography
Transmission function layer, light emitting functional layer, electric transmission functional layer and electronics function of injecting layer, it is characterised in that
Described hole function of injecting layer, hole transport functional layer, light emitting functional layer, electric transmission functional layer and
In electronics function of injecting layer, at least two-layer is doped layer, and described doped layer includes host material and doping material
Material；The forming method of doped layer includes:
It is sequentially depositing host material and dopant material, forms adjacent host material layer and dopant material
Layer；
The host material of the described at least two-layer doped layer of heating deposition and dopant material.
Method the most according to claim 1, it is characterised in that described in be sequentially depositing substrate material
Material and dopant material, form adjacent host material layer and dopant material layer particularly as follows:
Deposition substrate material, forms one layer of host material layer；
At described host material layer dopant material deposited above, form one layer of dopant material layer.
Method the most according to claim 1, it is characterised in that described in be sequentially depositing substrate material
Material and dopant material, form adjacent host material layer and dopant material layer particularly as follows:
The deposition substrate material being spaced successively and dopant material, form the host material layer of Spaced
With dopant material layer.
Method the most according to claim 3, it is characterised in that the described deposition being spaced successively
Host material and dopant material, form the host material layer of Spaced and dopant material layer particularly as follows:
Deposition substrate material, forms the first host material layer；
At described first host material layer dopant material deposited above, form dopant material layer；
Deposition substrate material on described dopant material layer, forms the second host material layer.
Method the most according to claim 1, it is characterised in that described heating-up temperature is 50-350
℃。
Method the most according to claim 1, it is characterised in that described at least two-layer doped layer
For hole function of injecting layer and hole transport functional layer；Form described hole function of injecting layer and hole passes
Transmission function layer specifically includes:
The host material of deposition of hole function of injecting layer and dopant material, form hole function of injecting layer
Host material layer and dopant material layer；
The host material of deposition of hole transfer function layer and dopant material, form hole transport functional layer
Host material layer and dopant material layer；
The hole function of injecting layer of heating deposition and the host material layer of hole transport functional layer and
Dopant material layer.
Method the most according to claim 1, it is characterised in that described at least two-layer doped layer
For electric transmission functional layer and electronics function of injecting layer；Form described electric transmission functional layer and electronics note
Enter functional layer to specifically include:
The host material of deposition electric transmission functional layer and dopant material, form electric transmission functional layer
Host material layer and dopant material layer；
The host material of deposition electronics function of injecting layer and dopant material, form electronics function of injecting layer
Host material layer and dopant material layer；
The electric transmission functional layer of heating deposition and the host material layer of electronics function of injecting layer and
Dopant material layer.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1201813A (en) * | 1997-06-05 | 1998-12-16 | 三星电管株式会社 | Phosphor having improved luminescense efficiency and process for preparing the same |
| CN1338887A (en) * | 2000-06-08 | 2002-03-06 | 伊斯曼柯达公司 | Manufacture of emitting layer of organic luminating device |
| CN1682387A (en) * | 2002-09-06 | 2005-10-12 | 纳幕尔杜邦公司 | Methods for producing full-color organic electroluminescent devices |
| CN103855312A (en) * | 2012-11-30 | 2014-06-11 | 海洋王照明科技股份有限公司 | Inverted top emission organic electroluminescence device and preparation method thereof |
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| JP3463362B2 (en) * | 1993-12-28 | 2003-11-05 | カシオ計算機株式会社 | Method of manufacturing electroluminescent device and electroluminescent device |
| JP4369066B2 (en) * | 2001-01-25 | 2009-11-18 | 日本放送協会 | Method for manufacturing organic electroluminescent display |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1201813A (en) * | 1997-06-05 | 1998-12-16 | 三星电管株式会社 | Phosphor having improved luminescense efficiency and process for preparing the same |
| CN1338887A (en) * | 2000-06-08 | 2002-03-06 | 伊斯曼柯达公司 | Manufacture of emitting layer of organic luminating device |
| CN1682387A (en) * | 2002-09-06 | 2005-10-12 | 纳幕尔杜邦公司 | Methods for producing full-color organic electroluminescent devices |
| CN103855312A (en) * | 2012-11-30 | 2014-06-11 | 海洋王照明科技股份有限公司 | Inverted top emission organic electroluminescence device and preparation method thereof |
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