WO2016019650A1 - Method for manufacturing organic light emitting device and method for manufacturing organic light emitting display panel - Google Patents

Method for manufacturing organic light emitting device and method for manufacturing organic light emitting display panel Download PDF

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WO2016019650A1
WO2016019650A1 PCT/CN2014/090877 CN2014090877W WO2016019650A1 WO 2016019650 A1 WO2016019650 A1 WO 2016019650A1 CN 2014090877 W CN2014090877 W CN 2014090877W WO 2016019650 A1 WO2016019650 A1 WO 2016019650A1
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layer
functional layer
matrix material
doping
depositing
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PCT/CN2014/090877
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French (fr)
Chinese (zh)
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闫光
孙力
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京东方科技集团股份有限公司
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Publication of WO2016019650A1 publication Critical patent/WO2016019650A1/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30Doping active layers, e.g. electron transporting layers

Definitions

  • At least one embodiment of the present invention is directed to a method of fabricating an organic light emitting device and a method of fabricating the organic light emitting display panel.
  • OLED Organic Light Emitting Diode
  • LCD Organic Light Emitting Diode
  • At least one embodiment of the present invention provides a method of fabricating an organic light emitting device and a method of fabricating the organic light emitting display panel to solve the problem of poor doping uniformity and poor effect of the doped layer.
  • At least one embodiment of the present invention provides a method of fabricating an organic light emitting device, comprising forming at least one functional layer between a cathode and an anode, at least one of the at least one functional layer being a doped layer .
  • the doped layer includes a host material and a dopant material.
  • the forming method of the at least one doped layer comprises: sequentially depositing a matrix material and a doping material to form an adjacent matrix material layer and a doping material layer; and heating the matrix material layer and the doping material layer.
  • At least one embodiment of the present invention provides a method of fabricating an organic light emitting display panel comprising preparing an organic light emitting device using the method described above.
  • 1 is a schematic structural view of an organic light emitting device
  • FIG. 2 is a schematic structural diagram of a hole injection functional layer according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural view of a hole injecting functional layer formed by the method shown in FIG. 3;
  • FIG. 5 is a flow chart of another method for depositing a matrix material and a doping material in sequence according to an embodiment of the present invention
  • FIG. 6 is a schematic view showing the structure of a hole injecting functional layer formed by the method shown in FIG. 5;
  • FIG. 7 is a flowchart of a method for forming a hole injecting functional layer and a hole transporting functional layer according to an embodiment of the present invention
  • FIG. 8 is a flowchart of a method for forming an electronic transmission function layer and an electron injection function layer according to an embodiment of the present invention
  • FIG. 9 is a flowchart of a method for fabricating an organic light emitting device according to an embodiment of the present invention.
  • the OLED display includes an OLED array substrate and an organic light emitting device.
  • the structure of the organic light-emitting device can be as shown in FIG. 1 and includes: an anode 1, a cathode 7 and an organic functional layer 10; the organic functional layer 10 can further comprise: a hole injection functional layer (HIL layer) 2, a hole transport functional layer (HTL layer) 3, a light-emitting function layer (EML layer) 4, an electron transport functional layer (ETL layer) 5, an electron injection functional layer (EIL layer) 6, and the like.
  • the illuminating functional layer is mainly used for illuminating, and the other functional layers are all conductive layers.
  • the main working principle is that the organic functional layer is driven by carrier injection and recombination under the driving of the electric field formed by the anode and the cathode.
  • the organic functional layer is generally a doped layer, that is, includes a doping material and a matrix material, and the performance of the matrix material is improved by adding a doping material to the matrix material.
  • the hole injection functional layer is a doped layer
  • the doping material is generally F4-TCNQ (2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone
  • the matrix material is typically ZnPc (zinc zinc cyanide), which enhances the conductivity of the matrix material by adding a dopant material to the matrix material.
  • the current method for preparing a P/N type doped layer of organic light emission is generally a method of co-evaporation, that is, heating the dopant material and the matrix material by using two evaporation sources respectively to make a dopant material.
  • Evaporation is mixed with the matrix material, so co-evaporation controls the doping ratio by controlling the evaporation rate ratio of the two, but there are many conditions affecting the evaporation rate, such as the evaporation area of the material, the volume of the material, etc., so the evaporation rate is difficult to control, and the evaporation rate is difficult to control.
  • the mixing uniformity of the hybrid material and the matrix material is poor, and the doping effect is not good.
  • At least one embodiment of the present invention provides a method of fabricating an organic light emitting device, the method comprising forming at least one functional layer between a cathode and an anode, and at least one of the at least one functional layer is doped
  • the impurity layer, the doped layer includes a matrix material and a dopant material.
  • the forming method of the at least one doped layer comprises: sequentially depositing a matrix material and a doping material to form an adjacent matrix material layer and a doping material layer; heating the matrix material layer and the doping material layer.
  • the at least one functional layer includes a light emitting functional layer, or the at least one layer
  • the functional layer includes a light emitting functional layer and a hole transport layer, or the at least one functional layer includes a hole transport layer, a light emitting functional layer, and an electron transport layer, or the at least one layer function
  • the layer includes a hole injection functional layer, a hole transport functional layer, a light-emitting functional layer, an electron transport functional layer, and an electron injection functional layer.
  • the doped layer is a film layer formed by at least two different materials, which generally includes at least a matrix material and a doping material.
  • the following embodiments of the present invention are performed by taking an organic functional layer including a hole injecting functional layer 2, a hole transporting functional layer 3, a light emitting functional layer 4, an electron transporting functional layer 5, and an electron injecting functional layer 6 as an example.
  • the hole injecting functional layer 2, the hole transporting functional layer 3, the light emitting functional layer 4, the electron transporting functional layer 5, and the electron injecting functional layer 6 may each be a doped layer.
  • the organic functional layer may also include other film or layer structures.
  • the hole injecting functional layer, the hole transporting functional layer, the light emitting functional layer, the electron transporting functional layer, and the electron injecting functional layer may be undoped layers as long as the hole injecting functional layer, the hole transporting functional layer, and the light emitting function are satisfied.
  • At least one of the layer, the electron transporting functional layer and the electron injecting functional layer may be a doped layer.
  • the method for fabricating the doped layer is mainly described by taking each functional layer as a doped layer.
  • the hole injection functional layer, the hole transport functional layer, the light-emitting function layer, the electron transport functional layer, and the electron injection functional layer may be a doped layer or an undoped layer, and the at least one doped layer may be formed.
  • the doping layer in the hole injecting functional layer, the hole transporting functional layer, the light emitting functional layer, the electron transporting functional layer, and the electron injecting functional layer may be formed by the method provided by the embodiment of the present invention, or may be doped.
  • the partially doped layer in the layer is formed by the method provided by the embodiment of the present invention.
  • the material generally forming the organic functional layer is an organic material, that is, the hole injecting functional layer, the hole transporting functional layer, the light emitting functional layer, the electron transport functional layer, and the electron injecting functional layer doping material and the matrix material are organic materials,
  • the matrix material layer and the dopant material layer are sequentially deposited, the atoms of the dopant material and the matrix material are diffused at a high temperature to achieve doping, and the matrix material and the doping material are uniformly mixed in the doped layer formed by atomic diffusion. Good effect.
  • the matrix material and the doping material are sequentially deposited to form an adjacent matrix material layer and a doping material layer, wherein the deposition order of the matrix material and the doping material is not specifically limited, and the matrix material may be first deposited to form a matrix material layer, and then Depositing the doping material to form a doping material layer; or depositing the doping material to form a doping material layer, and then depositing the matrix material to form a matrix material layer.
  • the matrix material and the dopant material are sequentially deposited in order to form adjacent matrix material layers and dopant material layers, such that diffusion of the host material and the dopant material is facilitated when the matrix material layer and the dopant material layer are heated.
  • sequentially depositing the matrix material and the dopant material may be sequentially vapor deposited in a coater to form adjacent layers of host material and dopant material.
  • Heating the matrix material layer and the dopant material layer can be carried out by various methods including, but not limited to, heating using a hot plate, an oven, an infrared lamp, a flash lamp, and a laser.
  • Embodiments of the present invention provide a method of fabricating an organic light emitting display device by sequentially depositing a host material and a dopant material to form adjacent matrix material layers and dopant material layers, and heating the matrix material layer and Doping the material layer to form a doped layer, which can be used to form each functional layer in the organic light emitting display, and the atoms of the doping material and the matrix material are diffused at a high temperature by heating, so the doping uniformity is good, and the doping is performed.
  • the complicated process is simple.
  • the heating temperature can be from 50 to 350 °C.
  • the preferred heating temperatures are also different.
  • the optimum temperature of the different functional layers is near the glass transition point (T g ) of the functional layer material.
  • sequentially depositing the matrix material and the dopant material to form adjacent matrix material layers and dopant material layers can include: depositing a matrix material to form a layer of matrix material; depositing a layer on the matrix material layer The hetero-material forms a layer of doped material.
  • a matrix material is deposited on the anode 1 to form a matrix material layer 21; a dopant material is deposited on the matrix material layer 21 to form a dopant material layer 22, through the pair of matrix material layers 21 and dopant materials.
  • the layer 22 is heated to form the hole injecting functional layer 2.
  • FIG. 2 is only described by taking a hole injecting functional layer and depositing a matrix material first.
  • the above method can be referred to.
  • sequentially depositing the host material and the dopant material to form adjacent matrix material layers and dopant material layers can include depositing the matrix material and the dopant material at intervals to form a plurality of spaced apart matrix materials. Layer and doped material layer.
  • the sequentially spaced deposition of the host material and the doping material to form a plurality of spaced apart matrix material layers and dopant material layers includes the following steps 301 to 305, which are introduced one by one below. step.
  • Step 301 depositing a matrix material to form a first matrix material layer (211).
  • Step 302 depositing a doping material on the first matrix material layer (211) to form a first dopant material layer (221).
  • Step 303 depositing a matrix material on the first doped material layer (221) to form a second matrix material layer (212).
  • Step 304 depositing a doping material on the second matrix material layer (212) to form a second dopant material layer (222).
  • Step 305 depositing a matrix material on the second doped material layer (222) to form a third matrix material layer (213).
  • the matrix material and the doped material layer are deposited at intervals to form adjacent three-layered matrix material layers and two layers of dopant materials.
  • the multilayered matrix material layer and the dopant material layer may be the same or different layers of the matrix material layer and the dopant material layer.
  • FIG. 3 illustrates a three-layered matrix material layer and two layers of dopant materials as an example.
  • the sequentially spaced deposition matrix material and dopant material, forming a plurality of spaced apart matrix material layers and dopant material layers may include the following steps 501 and 503 These steps are described one by one below.
  • Step 501 depositing a matrix material to form a first matrix material layer (211).
  • Step 502 depositing a doping material on the first matrix material layer (211) to form a doping material layer (22).
  • Step 503 depositing a matrix material on the layer of dopant material (22) to form a second layer of matrix material (212).
  • the matrix material and the doping material layer are deposited at intervals to form two adjacent matrix material layers and one doping material layer, as shown in FIG. 6, the doping material layer 22 is located in the two layers of the matrix material layer ( Between a matrix material layer 211 and a second matrix material layer 212).
  • the matrix material and the dopant material of the at least two doped layers may be sequentially deposited, and the deposited matrix material of the at least two doped layers and the deposited dopant material may be heated at a time.
  • the matrix material and the doping material which sequentially deposit at least two functional layers of the hole injecting functional layer, the hole transporting functional layer, the light emitting functional layer, the electron transporting functional layer, and the electron injecting functional layer may be formed by one heating. At least two functional layers to reduce the number of heating times and simplify production Process.
  • the hole injecting functional layer, the hole transporting functional layer, the electron transporting functional layer, and the electron injecting functional layer are formed by using the method provided by the embodiment of the present invention as an example.
  • the formation of the hole injecting functional layer and the hole transporting functional layer may include the following steps 701 to 703.
  • Step 701 depositing a matrix material and a dopant material of the hole injection functional layer to form a matrix material layer and a dopant material layer of the hole injection functional layer.
  • Step 702 depositing a matrix material and a dopant material of the hole transport functional layer to form a matrix material layer and a dopant material layer of the hole transport functional layer.
  • Step 703 heating the deposited hole injecting functional layer and the matrix material layer and the doping material layer of the hole transporting functional layer.
  • the hole injecting functional layer and the hole transporting functional layer are formed by one heating, and the hole injecting functional layer and the hole transporting functional layer are formed by heating, respectively, and the number of times of primary heating is reduced.
  • forming the electron transport functional layer and the electron injection functional layer may include the following steps 801 to 803.
  • Step 801 depositing a matrix material and a doping material of the electron transport functional layer to form a matrix material layer and a doping material layer of the electron transport functional layer.
  • Step 802 depositing a host material and a doping material of the electron injecting functional layer to form a matrix material layer and a doping material layer of the electron injecting functional layer.
  • Step 803 heating the deposited electron transport functional layer and the host material layer and the doping material layer of the electron injecting functional layer.
  • the electron transport functional layer and the electron injection functional layer are formed by one heating, and the electron transport functional layer and the electron injection functional layer are formed separately from each other, and the number of times of primary heating is reduced.
  • a method for fabricating an organic light emitting device according to an embodiment of the present invention will be described below. As shown in FIG. 9, the method includes the following steps 901 to 906, which are described one by one below.
  • Step 901 depositing ITO on the substrate to form an anode.
  • ITO can be deposited by sputtering to form an anode.
  • the anode can also be formed by depositing other materials.
  • Step 902 depositing ZnPc (zinc zinc phthalocyanine) on the anode to form a matrix material layer, and then sinking F4-TCNQ (2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone) to form a layer of dopant material and to heat the layer of matrix material and The layer of dopant material.
  • ZnPc zinc zinc phthalocyanine
  • the layer of host material and the layer of dopant material may be illuminated with a laser such that the host material and the dopant material complete doping.
  • the hole injecting functional layer can be formed by the above step 902.
  • Step 903 depositing NPB (N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine) to form a hole transport function Floor.
  • NPB N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine
  • the hole transport functional layer can be formed by the above step 903. It should be noted that the hole transporting functional layer is an undoped layer.
  • Step 904 depositing Alq 3 (8-hydroxyquinoline aluminum) to form a light-emitting functional layer and an electron transport functional layer.
  • the light-emitting functional layer and the electron transport functional layer may be formed at one time by depositing Alq 3 (8-hydroxyquinoline aluminum), that is, the light-emitting functional layer and the electron transport functional layer may be formed by the above-described step 904. It should be noted that the light-emitting function layer and the electron transport functional layer are undoped layers.
  • Step 905 depositing LiF (lithium fluoride) to form an electron injecting functional layer.
  • the electron injection functional layer can be formed by the above step 905. It should be noted that the electron injection functional layer is an undoped layer.
  • Step 906 depositing Al (aluminum) to form a cathode.
  • a metal thin film may be formed by depositing a metal material to serve as a cathode.
  • the hole injection functional layer is a doped layer, and the other functional layers are undoped layers.
  • the embodiments of the present invention are described in detail by way of example only, and other functional layers may also be doped layers.
  • a method of producing the above hole injecting functional layer is not limited to the specific steps described above, and the manufacturing method of the organic light emitting device provided by the embodiment of the present invention can be directly used for fabricating an organic light emitting display.
  • At least one embodiment of the present invention also provides a method of fabricating an organic light emitting display panel comprising preparing an organic light emitting device, and the organic light emitting device is prepared by the method provided by any of the above embodiments. Therefore, the preparation of the organic light-emitting device in the method provided by the embodiment of the present invention can be referred to the related description above, and details are not described herein again.
  • the method for fabricating an organic light emitting display panel further includes: forming a pixel defining layer, the pixel defining layer defining a plurality of organic light emitting units, wherein each of the organic light emitting units is provided with the organic light emitting device;
  • the board is packaged with a substrate on which the organic light emitting device is formed.

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Abstract

A method for manufacturing an organic light emitting device and a method for manufacturing an organic light emitting display panel. The method for manufacturing the organic light emitting device comprises forming at least one organic functional layer (10) disposed between a cathode (7) and an anode (1). At least one of the at least one organic functional layer (10) is a doped layer, and the doped layer comprising host material and doping material. A method for forming the doped layer comprises sequentially depositing the host material and the doping material to form an host material layer (21) and a doping material layer (22) adjacent to each other, and heating the host material layer (21) and the doping material layer (22). The method solves the problems of complex forming process and apparatus, poor doping uniformity and bad effect of the doped layer.

Description

制备有机发光器件的方法、制备有机发光显示面板的方法Method for preparing organic light emitting device, and method for preparing organic light emitting display panel 技术领域Technical field
本发明的至少一个实施例涉及一种制备有机发光器件的方法和制备有机发光显示面板的方法。At least one embodiment of the present invention is directed to a method of fabricating an organic light emitting device and a method of fabricating the organic light emitting display panel.
背景技术Background technique
OLED(Organic Light Emitting Diode,有机发光二极管)显示器是新一代的显示器,与液晶显示器相比,具有自发光、响应速度快、宽视角等优点,可以用于柔性显示、透明显示、3D显示等。OLED (Organic Light Emitting Diode) display is a new generation of display. Compared with liquid crystal display, it has the advantages of self-illumination, fast response, wide viewing angle, etc. It can be used for flexible display, transparent display, 3D display and so on.
发明内容Summary of the invention
本发明的至少一个实施例提供一种制备有机发光器件的方法和制备有机发光显示面板的方法,以解决掺杂层掺杂均匀性差、效果不佳的问题。At least one embodiment of the present invention provides a method of fabricating an organic light emitting device and a method of fabricating the organic light emitting display panel to solve the problem of poor doping uniformity and poor effect of the doped layer.
本发明的至少一个实施例提供了一种制备有机发光器件的方法,其包括形成位于阴极和阳极之间的至少一层功能层,所述至少一层功能层中的至少一层为掺杂层。所述掺杂层包括基质材料和掺杂材料。至少一层掺杂层的形成方法包括:依次沉积基质材料和掺杂材料,形成相邻的基质材料层和掺杂材料层;加热所述基质材料层和掺杂材料层。At least one embodiment of the present invention provides a method of fabricating an organic light emitting device, comprising forming at least one functional layer between a cathode and an anode, at least one of the at least one functional layer being a doped layer . The doped layer includes a host material and a dopant material. The forming method of the at least one doped layer comprises: sequentially depositing a matrix material and a doping material to form an adjacent matrix material layer and a doping material layer; and heating the matrix material layer and the doping material layer.
本发明的至少一个实施例提供一种制备有机发光显示面板的方法,其包括采用以上所述的方法制备有机发光器件。At least one embodiment of the present invention provides a method of fabricating an organic light emitting display panel comprising preparing an organic light emitting device using the method described above.
附图说明DRAWINGS
为了更清楚地说明本发明实施例的技术方案,下面将对实施例的附图作简单地介绍,显而易见地,下面描述中的附图仅仅涉及本发明的一些实施例,而非对本发明的限制。In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings of the embodiments will be briefly described below. It is obvious that the drawings in the following description relate only to some embodiments of the present invention, and are not intended to limit the present invention. .
图1为一种有机发光器件的结构示意图;1 is a schematic structural view of an organic light emitting device;
图2为本发明实施例提供的一种空穴注入功能层的结构示意图;2 is a schematic structural diagram of a hole injection functional layer according to an embodiment of the present invention;
图3为本发明实施例提供的一种依次间隔的沉积基质材料和掺杂材料的 方法流程图;3 is a sequentially spaced deposition substrate material and dopant material according to an embodiment of the present invention. Method flow chart;
图4为图3所示的方法形成的空穴注入功能层的结构示意图;4 is a schematic structural view of a hole injecting functional layer formed by the method shown in FIG. 3;
图5为本发明实施例提供的另一种依次间隔的沉积基质材料和掺杂材料的方法流程图;5 is a flow chart of another method for depositing a matrix material and a doping material in sequence according to an embodiment of the present invention;
图6为图5所示的方法形成的空穴注入功能层的结构示意图示意图;6 is a schematic view showing the structure of a hole injecting functional layer formed by the method shown in FIG. 5;
图7为本发明实施例提供的一种形成空穴注入功能层以及空穴传输功能层方法流程图;FIG. 7 is a flowchart of a method for forming a hole injecting functional layer and a hole transporting functional layer according to an embodiment of the present invention;
图8为本发明实施例提供的一种形成电子传输功能层以及电子注入功能层方法流程图;FIG. 8 is a flowchart of a method for forming an electronic transmission function layer and an electron injection function layer according to an embodiment of the present invention;
图9为本发明实施例提供的一种有机发光器件的制作方法流程图。FIG. 9 is a flowchart of a method for fabricating an organic light emitting device according to an embodiment of the present invention.
附图标记:Reference mark:
1-阳极;2-空穴注入功能层;3-空穴传输功能层;4-发光功能层;5-电子传输功能层;6-电子注入功能层;7-阴极;10-有机功能层;21-基质材料层;22-掺杂材料层;211-第一基质材料层;212-第二基质材料层;213-第三基质材料层;221-第一掺杂材料层;222-第二掺杂材料层。1-anode; 2-hole injection functional layer; 3-hole transport functional layer; 4-light-emitting functional layer; 5-electron transport functional layer; 6-electron injection functional layer; 7-cathode; 10-organic functional layer; 21-matrix material layer; 22-doped material layer; 211-first matrix material layer; 212-second matrix material layer; 213-third matrix material layer; 221-first doping material layer; Doped material layer.
具体实施方式detailed description
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例的附图,对本发明实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本发明的一部分实施例,而不是全部的实施例。基于所描述的本发明的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions of the embodiments of the present invention will be clearly and completely described in the following with reference to the accompanying drawings. It is apparent that the described embodiments are part of the embodiments of the invention, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the described embodiments of the present invention without departing from the scope of the invention are within the scope of the invention.
除非另外定义,本公开使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。同样,“一个”、“一”或者“该”等类似词语也不表示数量限制,而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是 直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。Unless otherwise defined, technical terms or scientific terms used in the present disclosure are intended to be in the ordinary meaning of those of ordinary skill in the art. The words "first," "second," and similar terms used in the present disclosure do not denote any order, quantity, or importance, but are used to distinguish different components. Similarly, the words "a", "an", "the" The word "comprising" or "comprises" or the like means that the element or item preceding the word is intended to be in the "Connected" or "connected" and the like are not limited to physical or mechanical connections, but may include electrical connections, whether Direct or indirect. "Upper", "lower", "left", "right", etc. are only used to indicate the relative positional relationship, and when the absolute position of the object to be described is changed, the relative positional relationship may also change accordingly.
OLED显示器包括:OLED阵列基板以及有机发光器件。有机发光器件的结构可以如图1所示,包括:阳极1、阴极7以及有机功能层10;有机功能层10还可以进一步包括:空穴注入功能层(HIL层)2、空穴传输功能层(HTL层)3、发光功能层(EML层)4、电子传输功能层(ETL层)5以及电子注入功能层(EIL层)6等。发光功能层主要用于发光,其他功能层均为导电层,其主要的工作原理是有机功能层在阳极和阴极所形成电场的驱动下,通过载流子注入和复合而发光。The OLED display includes an OLED array substrate and an organic light emitting device. The structure of the organic light-emitting device can be as shown in FIG. 1 and includes: an anode 1, a cathode 7 and an organic functional layer 10; the organic functional layer 10 can further comprise: a hole injection functional layer (HIL layer) 2, a hole transport functional layer (HTL layer) 3, a light-emitting function layer (EML layer) 4, an electron transport functional layer (ETL layer) 5, an electron injection functional layer (EIL layer) 6, and the like. The illuminating functional layer is mainly used for illuminating, and the other functional layers are all conductive layers. The main working principle is that the organic functional layer is driven by carrier injection and recombination under the driving of the electric field formed by the anode and the cathode.
有机功能层一般为掺杂层,即包括掺杂材料及基质材料,通过在基质材料中添加掺杂材料,提高基质材料的性能。例如,空穴注入功能层为掺杂层,掺杂材料一般为F4-TCNQ(2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌),基质材料一般为ZnPc(钛菁锌),通过在基质材料中添加掺杂材料以增强基质材料的导电性。The organic functional layer is generally a doped layer, that is, includes a doping material and a matrix material, and the performance of the matrix material is improved by adding a doping material to the matrix material. For example, the hole injection functional layer is a doped layer, and the doping material is generally F4-TCNQ (2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone The matrix material is typically ZnPc (zinc zinc cyanide), which enhances the conductivity of the matrix material by adding a dopant material to the matrix material.
本申请的发明人注意到,目前用于制备有机发光的P/N型掺杂层的方法通常为共蒸发的方法,即利用两个蒸发源分别对掺杂材料和基质材料加热使得掺杂材料和基质材料蒸发混合,因此共蒸发是通过控制二者的蒸发速率比来控制掺杂比例,但影响蒸发速率的条件比较多,比如材料的蒸发面积、材料体积等,因此蒸发速率难控制,掺杂材料和基质材料的混合均匀性较差,掺杂效果不佳。The inventors of the present application have noted that the current method for preparing a P/N type doped layer of organic light emission is generally a method of co-evaporation, that is, heating the dopant material and the matrix material by using two evaporation sources respectively to make a dopant material. Evaporation is mixed with the matrix material, so co-evaporation controls the doping ratio by controlling the evaporation rate ratio of the two, but there are many conditions affecting the evaporation rate, such as the evaporation area of the material, the volume of the material, etc., so the evaporation rate is difficult to control, and the evaporation rate is difficult to control. The mixing uniformity of the hybrid material and the matrix material is poor, and the doping effect is not good.
本发明的至少一个实施例提供了一种制备有机发光器件的方法,该方法包括形成位于阴极和阳极之间的至少一层功能层,并且所述至少一层功能层中的至少一层为掺杂层,掺杂层包括基质材料和掺杂材料。至少一层掺杂层的形成方法包括:依次沉积基质材料和掺杂材料,形成相邻的基质材料层和掺杂材料层;加热基质材料层和掺杂材料层。At least one embodiment of the present invention provides a method of fabricating an organic light emitting device, the method comprising forming at least one functional layer between a cathode and an anode, and at least one of the at least one functional layer is doped The impurity layer, the doped layer includes a matrix material and a dopant material. The forming method of the at least one doped layer comprises: sequentially depositing a matrix material and a doping material to form an adjacent matrix material layer and a doping material layer; heating the matrix material layer and the doping material layer.
由于有机发光器件包括单层器件、双层器件、三层器件和多层器件等类型,因此,在至少一个实施例中,所述至少一层功能层包括发光功能层,或者所述至少一层功能层包括发光功能层和空穴传输层,或者所述至少一层功能层包括空穴传输层、发光功能层以及电子传输层,或者所述至少一层功能 层包括空穴注入功能层、空穴传输功能层、发光功能层、电子传输功能层以及电子注入功能层。本发明实施例不做限定。Since the organic light emitting device includes a single layer device, a double layer device, a three layer device, and a multilayer device, in at least one embodiment, the at least one functional layer includes a light emitting functional layer, or the at least one layer The functional layer includes a light emitting functional layer and a hole transport layer, or the at least one functional layer includes a hole transport layer, a light emitting functional layer, and an electron transport layer, or the at least one layer function The layer includes a hole injection functional layer, a hole transport functional layer, a light-emitting functional layer, an electron transport functional layer, and an electron injection functional layer. The embodiments of the present invention are not limited.
需要说明的是,掺杂层即通过至少两种不同的材料形成的膜层,其一般至少包括基质材料和掺杂材料。如图1所示,本发明的以下实施例以有机功能层包括空穴注入功能层2、空穴传输功能层3、发光功能层4、电子传输功能层5以及电子注入功能层6为例进行说明。在本发明实施例中,空穴注入功能层2、空穴传输功能层3、发光功能层4、电子传输功能层5以及电子注入功能层6均可以为掺杂层。当然,有机功能层还可以包括其他薄膜或层结构。此外,空穴注入功能层、空穴传输功能层、发光功能层、电子传输功能层以及电子注入功能层也可以是非掺杂层,只要满足空穴注入功能层、空穴传输功能层、发光功能层、电子传输功能层以及电子注入功能层中至少一层为掺杂层即可,本发明实施例主要以各功能层为掺杂层为例说明掺杂层的制作方法。It should be noted that the doped layer is a film layer formed by at least two different materials, which generally includes at least a matrix material and a doping material. As shown in FIG. 1, the following embodiments of the present invention are performed by taking an organic functional layer including a hole injecting functional layer 2, a hole transporting functional layer 3, a light emitting functional layer 4, an electron transporting functional layer 5, and an electron injecting functional layer 6 as an example. Description. In the embodiment of the present invention, the hole injecting functional layer 2, the hole transporting functional layer 3, the light emitting functional layer 4, the electron transporting functional layer 5, and the electron injecting functional layer 6 may each be a doped layer. Of course, the organic functional layer may also include other film or layer structures. In addition, the hole injecting functional layer, the hole transporting functional layer, the light emitting functional layer, the electron transporting functional layer, and the electron injecting functional layer may be undoped layers as long as the hole injecting functional layer, the hole transporting functional layer, and the light emitting function are satisfied. At least one of the layer, the electron transporting functional layer and the electron injecting functional layer may be a doped layer. In the embodiment of the present invention, the method for fabricating the doped layer is mainly described by taking each functional layer as a doped layer.
由于空穴注入功能层、空穴传输功能层、发光功能层、电子传输功能层以及电子注入功能层可以是掺杂层,也可以是非掺杂层,则上述至少一层掺杂层的形成方法可以是对空穴注入功能层、空穴传输功能层、发光功能层、电子传输功能层以及电子注入功能层中的掺杂层都采用本发明实施例提供的方法形成,也可以是对掺杂层中的部分掺杂层采用本发明实施例提供的方法形成。The hole injection functional layer, the hole transport functional layer, the light-emitting function layer, the electron transport functional layer, and the electron injection functional layer may be a doped layer or an undoped layer, and the at least one doped layer may be formed. The doping layer in the hole injecting functional layer, the hole transporting functional layer, the light emitting functional layer, the electron transporting functional layer, and the electron injecting functional layer may be formed by the method provided by the embodiment of the present invention, or may be doped. The partially doped layer in the layer is formed by the method provided by the embodiment of the present invention.
由于一般形成有机功能层的材料为有机材料,即空穴注入功能层、空穴传输功能层、发光功能层、电子传输功能层以及电子注入功能层的掺杂材料和基质材料为有机材料,则当加热依次沉积的基质材料层和掺杂材料层时,掺杂材料和基质材料的原子在高温下扩散,实现掺杂,且原子扩散形成的掺杂层中基质材料和掺杂材料均匀,掺杂效果好。Since the material generally forming the organic functional layer is an organic material, that is, the hole injecting functional layer, the hole transporting functional layer, the light emitting functional layer, the electron transport functional layer, and the electron injecting functional layer doping material and the matrix material are organic materials, When the matrix material layer and the dopant material layer are sequentially deposited, the atoms of the dopant material and the matrix material are diffused at a high temperature to achieve doping, and the matrix material and the doping material are uniformly mixed in the doped layer formed by atomic diffusion. Good effect.
依次沉积基质材料和掺杂材料,形成相邻的基质材料层和掺杂材料层,其中,基质材料和掺杂材料的沉积先后顺序不作具体限定,可以是先沉积基质材料形成基质材料层,再沉积掺杂材料形成掺杂材料层;也可以是先沉积掺杂材料形成掺杂材料层,再沉积基质材料形成基质材料层。依次沉积基质材料和掺杂材料,是为了形成相邻的基质材料层和掺杂材料层,这样当加热所述基质材料层和掺杂材料层时有利于基质材料和掺杂材料的扩散。 The matrix material and the doping material are sequentially deposited to form an adjacent matrix material layer and a doping material layer, wherein the deposition order of the matrix material and the doping material is not specifically limited, and the matrix material may be first deposited to form a matrix material layer, and then Depositing the doping material to form a doping material layer; or depositing the doping material to form a doping material layer, and then depositing the matrix material to form a matrix material layer. The matrix material and the dopant material are sequentially deposited in order to form adjacent matrix material layers and dopant material layers, such that diffusion of the host material and the dopant material is facilitated when the matrix material layer and the dopant material layer are heated.
例如,依次沉积基质材料和掺杂材料可以是在镀膜机内依次蒸镀,以形成相邻的基质材料层和掺杂材料层。加热基质材料层和掺杂材料层可以通过各种方法进行,包括但不限于用使用加热板、烘箱、红外灯、闪光灯和激光加热。For example, sequentially depositing the matrix material and the dopant material may be sequentially vapor deposited in a coater to form adjacent layers of host material and dopant material. Heating the matrix material layer and the dopant material layer can be carried out by various methods including, but not limited to, heating using a hot plate, an oven, an infrared lamp, a flash lamp, and a laser.
本发明实施例提供了一种制备有机发光显示器件的方法,所述方法通过依次沉积基质材料和掺杂材料以形成相邻的基质材料层和掺杂材料层,并加热所述基质材料层和掺杂材料层以形成掺杂层,其可以用于形成有机发光显示器中各功能层,且通过加热使得掺杂材料和基质材料的原子在高温下扩散,因而掺杂的均匀性好,且掺杂的工艺简单。Embodiments of the present invention provide a method of fabricating an organic light emitting display device by sequentially depositing a host material and a dopant material to form adjacent matrix material layers and dopant material layers, and heating the matrix material layer and Doping the material layer to form a doped layer, which can be used to form each functional layer in the organic light emitting display, and the atoms of the doping material and the matrix material are diffused at a high temperature by heating, so the doping uniformity is good, and the doping is performed. The complicated process is simple.
在至少一个实施例中,加热温度可以为50-350℃。当然,根据不同功能层其基质材料和掺杂材料不同,其优选的加热温度也不同,例如,不同功能层的最佳温度在所述功能层材料的玻璃化转变点(Tg)附近。In at least one embodiment, the heating temperature can be from 50 to 350 °C. Of course, depending on the matrix material and the dopant material of the different functional layers, the preferred heating temperatures are also different. For example, the optimum temperature of the different functional layers is near the glass transition point (T g ) of the functional layer material.
在至少一个实施例中,依次沉积基质材料和掺杂材料,以形成相邻的基质材料层和掺杂材料层可以包括:沉积基质材料,形成一层基质材料层;在基质材料层上面沉积掺杂材料,形成一层掺杂材料层。In at least one embodiment, sequentially depositing the matrix material and the dopant material to form adjacent matrix material layers and dopant material layers can include: depositing a matrix material to form a layer of matrix material; depositing a layer on the matrix material layer The hetero-material forms a layer of doped material.
例如,如图2所示,在阳极1上沉积基质材料以形成基质材料层21;在基质材料层21上沉积掺杂材料以形成掺杂材料层22,通过对基质材料层21和掺杂材料层22加热以形成空穴注入功能层2。For example, as shown in FIG. 2, a matrix material is deposited on the anode 1 to form a matrix material layer 21; a dopant material is deposited on the matrix material layer 21 to form a dopant material layer 22, through the pair of matrix material layers 21 and dopant materials. The layer 22 is heated to form the hole injecting functional layer 2.
图2仅以形成空穴注入功能层,且先沉积基质材料为例进行说明,其他功能层的形成可以参照上述方法。FIG. 2 is only described by taking a hole injecting functional layer and depositing a matrix material first. For the formation of other functional layers, the above method can be referred to.
在至少一个实施例中,依次沉积基质材料和掺杂材料,以形成相邻的基质材料层和掺杂材料层可以包括:依次间隔地沉积基质材料和掺杂材料,形成多层间隔的基质材料层和掺杂材料层。In at least one embodiment, sequentially depositing the host material and the dopant material to form adjacent matrix material layers and dopant material layers can include depositing the matrix material and the dopant material at intervals to form a plurality of spaced apart matrix materials. Layer and doped material layer.
依次间隔地沉积基质材料和掺杂材料,即可以是沉积基质材料,以形成一层基质材料层;在基质材料层上面沉积掺杂材料,以形成一层掺杂材料层;在掺杂材料层上面沉积基质材料,以形成一层基质材料层,依次循环形成多层间隔的基质材料层和掺杂材料层。Depositing the matrix material and the doping material in sequence, that is, depositing the matrix material to form a layer of the matrix material; depositing a doping material on the layer of the matrix material to form a layer of the doping material; A matrix material is deposited thereon to form a layer of matrix material which is sequentially cycled to form a plurality of spaced apart layers of matrix material and dopant material.
例如,依次间隔的沉积基质材料和掺杂材料,形成多层间隔的基质材料层和掺杂材料层,可以是如图3、图4所示,包括以下步骤301至步骤305,下面逐一介绍这些步骤。 For example, the sequentially spaced deposition of the host material and the doping material to form a plurality of spaced apart matrix material layers and dopant material layers, as shown in FIG. 3 and FIG. 4, includes the following steps 301 to 305, which are introduced one by one below. step.
步骤301、沉积基质材料,以形成第一基质材料层(211)。Step 301, depositing a matrix material to form a first matrix material layer (211).
步骤302、在所述第一基质材料层(211)上面沉积掺杂材料,以形成第一掺杂材料层(221)。Step 302, depositing a doping material on the first matrix material layer (211) to form a first dopant material layer (221).
步骤303、在所述第一掺杂材料层(221)上面沉积基质材料,以形成第二基质材料层(212)。Step 303, depositing a matrix material on the first doped material layer (221) to form a second matrix material layer (212).
步骤304、在所述第二基质材料层(212)上面沉积掺杂材料,以形成第二掺杂材料层(222)。Step 304, depositing a doping material on the second matrix material layer (212) to form a second dopant material layer (222).
步骤305、在所述第二掺杂材料层(222)上面沉积基质材料,以形成第三基质材料层(213)。Step 305, depositing a matrix material on the second doped material layer (222) to form a third matrix material layer (213).
即间隔地沉积基质材料和掺杂材料层,以形成相邻间隔的三层基质材料层和两层掺杂材料层。当然,多层基质材料层和掺杂材料层可以是基质材料层和掺杂材料层的层数相同,也可以是不相同。图3以三层基质材料层和两层掺杂材料层为例进行说明。That is, the matrix material and the doped material layer are deposited at intervals to form adjacent three-layered matrix material layers and two layers of dopant materials. Of course, the multilayered matrix material layer and the dopant material layer may be the same or different layers of the matrix material layer and the dopant material layer. FIG. 3 illustrates a three-layered matrix material layer and two layers of dopant materials as an example.
在至少一个实施例中,如图5、图6所示,所述依次间隔的沉积基质材料和掺杂材料,形成多层间隔的基质材料层和掺杂材料层可以包括以下步骤501和步骤503,下面逐一介绍这些步骤。In at least one embodiment, as shown in FIG. 5 and FIG. 6, the sequentially spaced deposition matrix material and dopant material, forming a plurality of spaced apart matrix material layers and dopant material layers may include the following steps 501 and 503 These steps are described one by one below.
步骤501、沉积基质材料,以形成第一基质材料层(211)。Step 501, depositing a matrix material to form a first matrix material layer (211).
步骤502、在所述第一基质材料层(211)上面沉积掺杂材料,形成掺杂材料层(22)。Step 502, depositing a doping material on the first matrix material layer (211) to form a doping material layer (22).
步骤503、在所述掺杂材料层(22)上面沉积基质材料,形成第二基质材料层(212)。Step 503, depositing a matrix material on the layer of dopant material (22) to form a second layer of matrix material (212).
即间隔地沉积基质材料和掺杂材料层,以形成相邻间隔的两层基质材料层和一层掺杂材料层,如图6所示,掺杂材料层22位于两层基质材料层(第一基质材料层211和第二基质材料层212)之间。That is, the matrix material and the doping material layer are deposited at intervals to form two adjacent matrix material layers and one doping material layer, as shown in FIG. 6, the doping material layer 22 is located in the two layers of the matrix material layer ( Between a matrix material layer 211 and a second matrix material layer 212).
在至少一个实施例提供的方法中,可以依次沉积至少两层掺杂层的基质材料和掺杂材料,一次加热沉积的所述至少两层掺杂层的基质材料以及沉积的掺杂材料。In at least one embodiment, the matrix material and the dopant material of the at least two doped layers may be sequentially deposited, and the deposited matrix material of the at least two doped layers and the deposited dopant material may be heated at a time.
即可以是依次沉积空穴注入功能层、空穴传输功能层、发光功能层、电子传输功能层以及电子注入功能层中至少两层功能层的基质材料和掺杂材料,通过一次加热形成所述至少两层功能层,以减少加热的次数,简化制作 工艺。That is, the matrix material and the doping material which sequentially deposit at least two functional layers of the hole injecting functional layer, the hole transporting functional layer, the light emitting functional layer, the electron transporting functional layer, and the electron injecting functional layer may be formed by one heating. At least two functional layers to reduce the number of heating times and simplify production Process.
下面以采用本发明实施例提供的方法形成空穴注入功能层、空穴传输功能层、电子传输功能层以及电子注入功能层为例进行说明。Hereinafter, the hole injecting functional layer, the hole transporting functional layer, the electron transporting functional layer, and the electron injecting functional layer are formed by using the method provided by the embodiment of the present invention as an example.
例如,如图7所示,形成空穴注入功能层以及空穴传输功能层可以包括以下步骤701至步骤703。For example, as shown in FIG. 7, the formation of the hole injecting functional layer and the hole transporting functional layer may include the following steps 701 to 703.
步骤701、沉积空穴注入功能层的基质材料和掺杂材料,形成空穴注入功能层的基质材料层和掺杂材料层。Step 701, depositing a matrix material and a dopant material of the hole injection functional layer to form a matrix material layer and a dopant material layer of the hole injection functional layer.
步骤702、沉积空穴传输功能层的基质材料和掺杂材料,形成空穴传输功能层的基质材料层和掺杂材料层。Step 702, depositing a matrix material and a dopant material of the hole transport functional layer to form a matrix material layer and a dopant material layer of the hole transport functional layer.
步骤703、一次加热沉积的空穴注入功能层以及空穴传输功能层的基质材料层和掺杂材料层。Step 703: heating the deposited hole injecting functional layer and the matrix material layer and the doping material layer of the hole transporting functional layer.
即形成空穴注入功能层以及空穴传输功能层采用一次加热,相对于分别加热形成空穴注入功能层和空穴传输功能层,减少了一次加热的次数。That is, the hole injecting functional layer and the hole transporting functional layer are formed by one heating, and the hole injecting functional layer and the hole transporting functional layer are formed by heating, respectively, and the number of times of primary heating is reduced.
例如,如图8所示,形成电子传输功能层以及电子注入功能层可以包括以下步骤801至803。For example, as shown in FIG. 8, forming the electron transport functional layer and the electron injection functional layer may include the following steps 801 to 803.
步骤801、沉积电子传输功能层的基质材料和掺杂材料,形成电子传输功能层的基质材料层和掺杂材料层。Step 801, depositing a matrix material and a doping material of the electron transport functional layer to form a matrix material layer and a doping material layer of the electron transport functional layer.
步骤802、沉积电子注入功能层的基质材料和掺杂材料,形成电子注入功能层的基质材料层和掺杂材料层。Step 802, depositing a host material and a doping material of the electron injecting functional layer to form a matrix material layer and a doping material layer of the electron injecting functional layer.
步骤803、一次加热沉积的电子传输功能层以及电子注入功能层的基质材料层和掺杂材料层。Step 803, heating the deposited electron transport functional layer and the host material layer and the doping material layer of the electron injecting functional layer.
即形成电子传输功能层以及电子注入功能层采用一次加热,相对于分别加热形成电子传输功能层以及电子注入功能层,减少了一次加热的次数。That is, the electron transport functional layer and the electron injection functional layer are formed by one heating, and the electron transport functional layer and the electron injection functional layer are formed separately from each other, and the number of times of primary heating is reduced.
下面将列举一具体实施例,说明本发明实施例提供的有机发光器件的制作方法,如图9所示,所述方法包括以下步骤901至步骤906,下面逐一介绍这些步骤。A method for fabricating an organic light emitting device according to an embodiment of the present invention will be described below. As shown in FIG. 9, the method includes the following steps 901 to 906, which are described one by one below.
步骤901、在衬底上沉积ITO形成阳极。Step 901, depositing ITO on the substrate to form an anode.
例如,可以通过溅射的方法沉积ITO以形成阳极。当然,阳极也可以通过沉积其他材料形成。For example, ITO can be deposited by sputtering to form an anode. Of course, the anode can also be formed by depositing other materials.
步骤902、在所述阳极上沉积ZnPc(钛菁锌)以形成基质材料层,再沉 积F4-TCNQ(2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌)以形成掺杂材料层,并加热所述基质材料层和所述掺杂材料层。Step 902, depositing ZnPc (zinc zinc phthalocyanine) on the anode to form a matrix material layer, and then sinking F4-TCNQ (2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone) to form a layer of dopant material and to heat the layer of matrix material and The layer of dopant material.
例如,可以利用激光照射所述基质材料层和所述掺杂材料层,以使得基质材料和掺杂材料完成掺杂。通过上述步骤902可形成空穴注入功能层。For example, the layer of host material and the layer of dopant material may be illuminated with a laser such that the host material and the dopant material complete doping. The hole injecting functional layer can be formed by the above step 902.
步骤903、沉积NPB(N,N'-二苯基-N,N'-双(1-萘基)-1,1'-联苯-4,4'-二胺)以形成空穴传输功能层。Step 903, depositing NPB (N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine) to form a hole transport function Floor.
通过上述步骤903可形成空穴传输功能层。需要说明的是,上述空穴传输功能层为非掺杂层。The hole transport functional layer can be formed by the above step 903. It should be noted that the hole transporting functional layer is an undoped layer.
步骤904、沉积Alq3(8-羟基喹啉铝)以形成发光功能层以及电子传输功能层。Step 904, depositing Alq 3 (8-hydroxyquinoline aluminum) to form a light-emitting functional layer and an electron transport functional layer.
发光功能层和电子传输功能层可以是通过沉积Alq3(8-羟基喹啉铝)一次形成,即通过上述步骤904可形成发光功能层以及电子传输功能层。需要说明的是,上述发光功能层以及电子传输功能层为非掺杂层。The light-emitting functional layer and the electron transport functional layer may be formed at one time by depositing Alq 3 (8-hydroxyquinoline aluminum), that is, the light-emitting functional layer and the electron transport functional layer may be formed by the above-described step 904. It should be noted that the light-emitting function layer and the electron transport functional layer are undoped layers.
步骤905、沉积LiF(氟化锂)以形成电子注入功能层。 Step 905, depositing LiF (lithium fluoride) to form an electron injecting functional layer.
通过上述步骤905可形成电子注入功能层。需要说明的是,上述电子注入功能层为非掺杂层。The electron injection functional layer can be formed by the above step 905. It should be noted that the electron injection functional layer is an undoped layer.
步骤906、沉积Al(铝)以形成阴极。Step 906, depositing Al (aluminum) to form a cathode.
例如,可以是通过沉积金属材料,形成金属薄膜,以用作阴极。For example, a metal thin film may be formed by depositing a metal material to serve as a cathode.
上述实施例中空穴注入功能层为掺杂层,其他功能层为非掺杂层,本发明实施例仅以上述为例进行详细说明,其他功能层也可以是掺杂层,其制作方法可以参照上述空穴注入功能层的制作方法。本发明实施例提供的制作方法不局限于上述具体的步骤,且本发明实施例提供的有机发光器件的制作方法,可直接用于制作有机发光显示器。In the above embodiments, the hole injection functional layer is a doped layer, and the other functional layers are undoped layers. The embodiments of the present invention are described in detail by way of example only, and other functional layers may also be doped layers. A method of producing the above hole injecting functional layer. The manufacturing method provided by the embodiment of the present invention is not limited to the specific steps described above, and the manufacturing method of the organic light emitting device provided by the embodiment of the present invention can be directly used for fabricating an organic light emitting display.
本发明的至少一个实施例还提供了一种制备有机发光显示面板的方法,其包括制备有机发光器件,并且所述有机发光器件采用上述任一实施例提供的方法制备。因此,本发明实施例提供的方法中有机发光器件的制备可以参考上述相关描述,此处不再赘述。At least one embodiment of the present invention also provides a method of fabricating an organic light emitting display panel comprising preparing an organic light emitting device, and the organic light emitting device is prepared by the method provided by any of the above embodiments. Therefore, the preparation of the organic light-emitting device in the method provided by the embodiment of the present invention can be referred to the related description above, and details are not described herein again.
此外,本发明实施例提供的制备有机发光显示面板的方法还包括:形成像素界定层,像素界定层限定了多个有机发光单元,每个有机发光单元中设有上述有机发光器件;以及将盖板与形成有有机发光器件的基板封装在一起。 In addition, the method for fabricating an organic light emitting display panel provided by the embodiment of the present invention further includes: forming a pixel defining layer, the pixel defining layer defining a plurality of organic light emitting units, wherein each of the organic light emitting units is provided with the organic light emitting device; The board is packaged with a substrate on which the organic light emitting device is formed.
以上所述仅是本发明的示范性实施方式,而非用于限制本发明的保护范围,本发明的保护范围由所附的权利要求确定。The above is only an exemplary embodiment of the present invention, and is not intended to limit the scope of the present invention. The scope of the present invention is defined by the appended claims.
本申请要求于2014年8月7日递交的中国专利申请第201410386522.X号的优先权,在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。 The present application claims the priority of the Chinese Patent Application No. 201410386522.X filed on Aug. 7, 2014, the entire disclosure of which is hereby incorporated by reference.

Claims (10)

  1. 一种制备有机发光器件的方法,包括形成位于阴极和阳极之间的至少一层功能层,其中,A method of fabricating an organic light emitting device, comprising forming at least one functional layer between a cathode and an anode, wherein
    所述至少一层功能层中的至少一层为掺杂层,所述掺杂层包括基质材料和掺杂材料;至少一层掺杂层的形成方法包括:At least one of the at least one functional layer is a doped layer, the doped layer comprises a matrix material and a doping material; and the forming method of the at least one doped layer comprises:
    依次沉积基质材料和掺杂材料,形成相邻的基质材料层和掺杂材料层;以及Depositing a matrix material and a dopant material in sequence to form adjacent matrix material layers and dopant material layers;
    加热所述基质材料层和掺杂材料层。The layer of host material and the layer of dopant material are heated.
  2. 根据权利要求1所述的方法,其中,The method of claim 1 wherein
    所述至少一层功能层包括发光功能层,或者The at least one functional layer includes a light emitting functional layer, or
    所述至少一层功能层包括发光功能层和空穴传输层,或者The at least one functional layer includes a light emitting functional layer and a hole transport layer, or
    所述至少一层功能层包括空穴传输层、发光功能层以及电子传输层,或者The at least one functional layer includes a hole transport layer, a light emitting functional layer, and an electron transport layer, or
    所述至少一层功能层包括空穴注入功能层、空穴传输功能层、发光功能层、电子传输功能层以及电子注入功能层。The at least one functional layer includes a hole injection functional layer, a hole transport functional layer, a light emitting functional layer, an electron transport functional layer, and an electron injection functional layer.
  3. 根据权利要求1或2所述的方法,其中,所述依次沉积基质材料和掺杂材料,形成相邻的基质材料层和掺杂材料层包括:The method according to claim 1 or 2, wherein said sequentially depositing a matrix material and a doping material to form adjacent layers of the matrix material and the layer of dopant material comprises:
    沉积基质材料,形成一层基质材料层;Depositing a matrix material to form a layer of matrix material;
    在所述基质材料层上面沉积掺杂材料,形成一层掺杂材料层。A dopant material is deposited over the layer of host material to form a layer of dopant material.
  4. 根据权利要求1或2所述的方法,其中,所述依次沉积基质材料和掺杂材料,形成相邻的基质材料层和掺杂材料层包括:The method according to claim 1 or 2, wherein said sequentially depositing a matrix material and a doping material to form adjacent layers of the matrix material and the layer of dopant material comprises:
    依次间隔的沉积基质材料和掺杂材料,形成多层间隔的基质材料层和掺杂材料层。The sequentially spaced deposition of the host material and the dopant material form a plurality of spaced apart matrix material layers and dopant material layers.
  5. 根据权利要求4所述的方法,其中,所述依次间隔的沉积基质材料和掺杂材料,形成多层间隔的基质材料层和掺杂材料层包括:The method of claim 4 wherein said sequentially spaced apart deposition of host material and dopant material to form a plurality of spaced apart matrix material layers and dopant material layers comprises:
    沉积基质材料,形成第一基质材料层;Depositing a matrix material to form a first matrix material layer;
    在所述第一基质材料层上面沉积掺杂材料,形成掺杂材料层;Depositing a dopant material on the first matrix material layer to form a dopant material layer;
    在所述掺杂材料层上沉积基质材料,形成第二基质材料层。A matrix material is deposited on the layer of dopant material to form a second layer of matrix material.
  6. 根据权利要求1-5任一所述的方法,其中,所述加热温度为50-350℃。 The method according to any one of claims 1 to 5, wherein the heating temperature is 50 to 350 °C.
  7. 根据权利要求1,2,4或5所述的方法,其中,依次沉积至少两层掺杂层的基质材料和掺杂材料,一次加热沉积的所述至少两层掺杂层的基质材料和掺杂材料。The method according to claim 1, 2, 4 or 5, wherein the matrix material and the doping material of at least two doped layers are sequentially deposited, and the matrix material and the doped layer of the at least two doped layers are thermally deposited at one time. Miscellaneous materials.
  8. 根据权利要求7所述的方法,其中,所述至少两层掺杂层为空穴注入功能层以及空穴传输功能层;形成所述空穴注入功能层以及空穴传输功能层包括:The method according to claim 7, wherein the at least two doped layers are a hole injecting functional layer and a hole transporting functional layer; forming the hole injecting functional layer and the hole transporting functional layer include:
    沉积空穴注入功能层的基质材料和掺杂材料,形成空穴注入功能层的基质材料层和掺杂材料层;Depositing a host material and a doping material of the hole injecting functional layer to form a matrix material layer and a doping material layer of the hole injecting functional layer;
    沉积空穴传输功能层的基质材料和掺杂材料,形成空穴传输功能层的基质材料层和掺杂材料层;Depositing a matrix material and a doping material of the hole transport functional layer to form a matrix material layer and a doping material layer of the hole transport functional layer;
    一次加热沉积的空穴注入功能层以及空穴传输功能层的基质材料层和掺杂材料层。The hole injecting functional layer and the matrix material layer and the doping material layer of the hole transporting functional layer are heated once.
  9. 根据权利要求7所述的方法,其中,所述至少两层掺杂层为电子传输功能层以及电子注入功能层;形成所述电子传输功能层以及电子注入功能层包括:The method according to claim 7, wherein the at least two doped layers are an electron transport functional layer and an electron injection functional layer; forming the electron transport functional layer and the electron injection functional layer include:
    沉积电子传输功能层的基质材料和掺杂材料,形成电子传输功能层的基质材料层和掺杂材料层;Depositing a host material and a doping material of the electron transport functional layer to form a matrix material layer and a doping material layer of the electron transport functional layer;
    沉积电子注入功能层的基质材料和掺杂材料,形成电子注入功能层的基质材料层和掺杂材料层;Depositing a host material and a doping material of the electron injecting functional layer to form a matrix material layer and a doping material layer of the electron injecting functional layer;
    一次加热沉积的电子传输功能层以及电子注入功能层的基质材料层和掺杂材料层。The deposited electron transport functional layer and the electron injecting functional layer matrix material layer and the doping material layer are heated once.
  10. 一种制备有机发光显示面板的方法,包括:采用如权利要求1-9任一项所述的方法制备有机发光器件。 A method of preparing an organic light-emitting display panel, comprising: preparing an organic light-emitting device by the method according to any one of claims 1-9.
PCT/CN2014/090877 2014-08-07 2014-11-12 Method for manufacturing organic light emitting device and method for manufacturing organic light emitting display panel WO2016019650A1 (en)

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