KR102316200B1 - Organic light emitting device and method of fabricating the same - Google Patents

Abstract

The present invention can reduce heat transfer from the first electrode in which the porous layer is applied to the first electrode to the organic light emitting layer in the organic light emitting device.
By preventing the deformation of the molecular structure of the organic material due to heat that may be transferred to the organic light emitting layer, it is possible to stably drive the organic light emitting device in a high temperature environment, and it is possible to improve the electro-optical characteristics and lifespan characteristics of the organic light emitting display panel.
In addition, due to the difference in refractive index between the first electrode having a relatively high refractive index and the porous layer having a low refractive index, a portion of light is reflected and the efficiency and luminance of the organic light emitting display panel can be improved due to the light reinforcement phenomenon.

Description

Organic light emitting device and manufacturing method thereof

The present invention relates to an organic light emitting device, and more particularly, to an organic light emitting device having improved reliability and luminous efficiency in a high temperature environment.

An organic light emitting display (OLED) is a self-emitting display device, in which electrons and holes are injected into the light emitting layer from an electrode for electron injection and an electrode for hole injection, respectively. This is a display device using an organic light emitting diode that emits light when excitons in which injected electrons and holes are combined fall from an excited state to a ground state.

The organic light emitting diode display includes a top emission type, a bottom emission type, a dual emission type, etc. depending on a direction in which light is emitted, and a passive matrix type according to a driving method. ) and active matrix type.

Unlike a liquid crystal display (LCD), the organic light emitting diode display does not require a separate light source, so it can be manufactured in a lightweight and thin form. In addition, the organic light emitting diode display is being researched as a next-generation display because it is advantageous in terms of power consumption due to low voltage driving, and has excellent color realization, response speed, viewing angle, and contrast ratio (CR).

With the development of high-resolution displays, the number of pixels per unit area increases and high luminance is required. There is a problem in that the reliability of the organic light emitting diode decreases and power consumption increases.

Therefore, it is necessary to overcome the technical limitations of luminous efficiency, lifespan improvement, and power consumption reduction of organic light emitting diodes, which are factors that impede the quality and productivity of organic light emitting display devices. Various studies are being conducted for the development of an organic light emitting device capable of improving characteristics.

In order to improve the quality and productivity of the organic light emitting diode display, various organic light emitting device structures have been studied to improve the efficiency, lifespan, and power consumption of the organic light emitting diode.

In addition, in the organic light emitting device, a test in a high temperature environment is being performed to confirm stable operation and reliability at a high temperature.

In the case of a top emission type organic light emitting device in the high temperature test environment as described above, a reflective layer made of a metal material having a low specific heat is applied to the first electrode (anode). It can accept and easily conduct the heat to the organic layer.

That is, when the first electrode (anode) is in direct contact with a high-temperature heat source, heat can be easily transferred from the first electrode (anode) including the reflective layer of a metal material to the organic light emitting layer adjacent to the upper part, and accordingly, the organic material vulnerable to heat In some cases, degeneration may occur.

In the case of an organic material, its properties may change depending on temperature, and the structure of the organic material molecule may be deformed or damaged depending on the temperature.

When the molecular structure of an organic material is deformed due to heat transferred to the organic light emitting layer, it has a negative effect on electron and hole transport and recombination, which may interfere with the formation of excitons. Accordingly, electro-optical characteristics such as luminance and lifespan characteristics of the organic light emitting display panel may be deteriorated.

Accordingly, the inventors of the present invention have invented a new organic light emitting device structure capable of improving reliability and luminous efficiency in a high temperature environment in the organic light emitting device structure.

SUMMARY An object of the present invention is to provide an organic light emitting device capable of stably driving an organic light emitting diode display in a high temperature environment and improving luminous efficiency.

The problems to be solved according to the embodiment of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

In the organic light emitting device according to an embodiment of the present invention, there is provided an organic light emitting device capable of improving reliability and luminous efficiency in a high temperature environment.

The present invention provides a first electrode comprising a first conductive layer and a second conductive layer and a reflective layer formed therebetween, a second electrode positioned opposite the first electrode, and an organic light emitting layer formed between the first electrode and the second electrode; An organic light-emitting device including a porous layer formed in a first electrode is provided.

The porous layer may be positioned between the reflective layer and the second conductive layer.

Porous layer is indium tin oxide (ITO), fluorine-containing tin oxide (FTO), antimony tin oxide (ATO), cadmium tin oxide (CTO), zinc oxide (ZnO), gallium zinc oxide (GZO), indium zinc oxide (IZO) ) can be any one of

The thickness of the porous layer may be 1 nm or more and 170 nm or less.

The shape of the pores of the porous layer may be any one of a spherical shape or an elliptical shape.

The reflective layer may be formed of any one of silver (Ag), platinum (Pt), aluminum (Al), or an alloy including the same.

The porous layer may reduce heat transfer from the first electrode to the organic light emitting layer.

The porous layer may include a first porous layer positioned between the first conductive layer and the reflective layer and a second porous layer positioned between the reflective layer and the second conductive layer.

The thickness of the first porous layer and the thickness of the second porous layer may be different from each other.

In addition, the method of manufacturing an organic light emitting device according to an embodiment of the present invention includes the steps of forming a first conductive layer on a substrate, forming a reflective layer on the first conductive layer, applying a polymer in particle form to the reflective layer, and adding the polymer to the reflective layer. Forming a porous layer material on the applied reflective layer, heat-treating the substrate to sinter the polymer to form a porous layer, forming a second conductive layer on the porous layer, and forming an organic light emitting layer on the second conductive layer and forming a second electrode on the organic light emitting layer.

In addition, the method of manufacturing an organic light emitting device according to another embodiment of the present invention includes the steps of forming a first conductive layer on a substrate, applying a polymer in particle form to the first conductive layer, and applying the polymer to the first conductive layer. Forming a porous layer material, heat-treating the substrate to sinter the polymer to form a first porous layer, forming a reflective layer on the first porous layer, applying a polymer in particle form to the reflective layer, and applying the polymer Forming a porous layer material on the reflective layer, heat-treating the substrate to sinter the polymer to form a second porous layer, forming a second conductive layer on the second porous layer, and forming an organic light emitting layer on the second conductive layer and forming a second electrode on the organic light emitting layer.

The polymer may be made of any one of polystyrene, polyethylene, polymethylmethacrylate, polyacrylonitrile, and polyvinylchloride.

The shape of the polymer is spherical, and the diameter of the polymer may be 1 nm or more and 170 nm or less.

Porous layer materials include indium tin oxide (ITO), fluorine-containing tin oxide (FTO), antimony tin oxide (ATO), cadmium tin oxide (CTO), zinc oxide (ZnO), gallium zinc oxide (GZO), indium zinc oxide ( IZO).

The heat treatment temperature may be 300° C. or less.

In the case of the organic light-emitting device in which the porous layer is applied to the first electrode according to the embodiment of the present invention, heat transfer from the first electrode to the adjacent organic light-emitting layer may be reduced.

That is, it is possible to stably drive the organic light emitting device in a high temperature environment by preventing the deformation of the molecular structure of the organic material due to heat that can be transferred to the organic light emitting layer, and reliability and lifespan characteristics of the organic light emitting display panel can be improved.

In addition, due to the difference in refractive index between the first electrode having a relatively high refractive index and the porous layer having a low refractive index, a portion of light is reflected, and the efficiency and luminance of the organic light emitting display panel can be improved by reinforcing light.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the following description.

Since the content of the invention described in the problems to be solved above, the means for solving the problems, and the effects do not specify the essential characteristics of the claims, the scope of the claims is not limited by the matters described in the content of the invention.

1 is a schematic cross-sectional view of an organic light emitting diode according to an embodiment of the present invention.
2 is a flowchart illustrating a method of manufacturing an organic light emitting device according to an embodiment of the present invention.
3 is a schematic cross-sectional view of an organic light emitting device according to another embodiment of the present invention.
4 is a flowchart illustrating a method of manufacturing an organic light emitting device according to another exemplary embodiment of the present invention.
5 is a schematic cross-sectional view of an organic light emitting diode according to another embodiment of the present invention.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the art to which the present invention pertains It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are exemplary, and thus the present invention is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the case in which the plural is included is included unless otherwise explicitly stated.

In interpreting the components, it is interpreted as including an error range even if there is no separate explicit description. In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'beside', etc., 'right' Alternatively, one or more other parts may be positioned between the two parts unless 'directly' is used.

Also, although the first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present invention.

Each feature of the various embodiments of the present invention may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each of the embodiments may be implemented independently of each other or may be implemented together in a related relationship. may be

Hereinafter, the present invention will be described in detail with reference to the drawings.

1 is a schematic cross-sectional view of an organic light emitting diode according to an embodiment of the present invention.

Also, FIG. 2 is a flowchart illustrating a method of manufacturing an organic light emitting device according to an exemplary embodiment of the present invention.

A structure and a manufacturing method of an organic light emitting diode according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 and 2 .

1, the organic light emitting device 100 of the present invention includes a first electrode 150 (anode) stacked on a substrate on which red, green, and blue pixel regions Rp, Gp, and Bp are defined; It is configured to include an organic light emitting layer 160 formed on the first electrode 150 , a second electrode 170 (cathode) and a capping layer (CPL) formed on the organic light emitting layer 160 .

In addition, although not shown, in the organic light emitting diode display including the organic light emitting device, a gate line and a data line that cross each other and define each pixel area and a power line extending parallel to any one of them are positioned on the substrate, , in each pixel area, a switching thin film transistor connected to a gate line and a data line and a driving thin film transistor connected to the switching thin film transistor are positioned. The driving thin film transistor is connected to the first electrode 150 .

As shown in FIG. 1 , the first electrode 150 is formed in the red, green, and blue pixel regions Rp, Gp, and Bp, and in the case of a top emission type organic light emitting device, it may be formed as a reflective electrode. and may include a first conductive layer 110 , a reflective layer 120 , a porous layer 130 , and a second conductive layer 140 .

The first conductive layer 110 and the second conductive layer 140 may be formed of a transparent conductive material layer having a high work function, such as indium-tin-oxide (ITO).

The reflective layer 120 may be made of a material having high reflectance, such as silver (Ag), platinum (Pt), aluminum (Al), or an alloy containing the same.

The porous layer 130 is indium tin oxide (ITO), fluorine-containing tin oxide (FTO), antimony tin oxide (ATO), cadmium tin oxide (CTO), zinc oxide (ZnO), gallium zinc oxide (GZO), indium oxide It may be made of a material such as zinc (IZO).

The shape of the pores of the porous layer 130 may be any one of a spherical shape or an oval shape.

The thickness of the porous layer 130 is generated while a portion of light is reflected due to a difference in refractive index between the porous layer 130 having a low refractive index and the second conductive layer 140 having a relatively high refractive index. Considering the reinforcement resistance, it is preferably 1 nm or more and 170 nm or less.

Although not specifically shown in FIG. 1, the organic light emitting layer 160 is a hole injection layer (HIL), a hole transporting layer (HTL), a red emission layer (Red EML) and a green light emitting layer ( Includes an emission layer (EML), an electron transporting layer (ETL), and an electron injection layer (EIL) comprising a green emission layer (Green EML) and a blue emission layer (Blue EML) can be configured.

The hole injection layer HIL is positioned on the first electrode 150 to correspond to all of the red, green, and blue pixel regions Rp, Gp, and Bp.

The hole injection layer (HIL) may serve to facilitate hole injection, and may include HATCN and cupper phthalocyanine (CuPc), poly(3,4)-ethylenedioxythiophene (PEDOT), polyaniline (PANI), and N,N (N,N). -dinaphthyl-N,N'-diphenylbenzidine) may consist of any one or more selected from the group consisting of, but is not limited thereto.

The hole transport layer HTL is disposed on the hole injection layer HIL and corresponds to the red pixel region Rp, the green pixel region Gp, and the blue pixel region Bp.

The hole transport layer (HTL) serves to facilitate the transport of holes, and NPD (N,N-dinaphthyl-N,N'-diphenylbenzidine) Any one selected from the group consisting of N'-bis-(phenyl)-benzidine), s-TAD and MTDATA (4,4',4"-Tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine) It may be made as above, but is not limited thereto.

The red light emitting layer (Red EML), the green light emitting layer (Green EML), and the blue light emitting layer (Blue EML) are respectively located in the red, green, and blue pixel areas (Rp, Gp, Bp), and each of the red, green, and blue light emitting layers is red , green and blue light emitting materials may be included, respectively, and may be formed using a phosphorescent material or a fluorescent material.

The red light emitting layer (Red EML) includes a host material including CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl), PIQIr (acac) (bis (1-phenylisoquinoline) acetylacetonate iridium)) , PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) as a phosphorescent material containing a dopant containing any one or more selected from the group consisting of Alternatively, it may be made of a fluorescent material including PBD:Eu(DBM)3(Phen) or Perylene, but is not limited thereto.

The green light emitting layer (Green EML) includes a host material containing CBP or mCP, and is formed of a phosphorescent material containing a dopant material such as an Ir complex containing Ir(ppy)3 (fac tris(2-phenylpyridine)iridium). Alternatively, it may be made of a fluorescent material including Alq3 (tris(8-hydroxyquinolino)aluminum), but is not limited thereto.

The blue light emitting layer (Blue EML) includes a host material including CBP or mCP, and may be formed of a phosphorescent material including a dopant material including (4,6-F2ppy)2Irpic. On the other hand, the blue light emitting layer 160 is formed of a fluorescent material including any one selected from the group consisting of spiro-DPVBi, spiro-6P, distylbenzene (DSB), distrylarylene (DSA), PFO-based polymer and PPV-based polymer. ) can be achieved, but is not limited thereto.

The electron transport layer ETL is disposed on the red emission layer Red EML, the green emission layer Green EML, and the blue emission layer Blue EML. The thickness of the electron transport layer (ETL) may be adjusted in consideration of electron transport characteristics. The electron transport layer ETL may serve to transport and inject electrons, and the electron injection layer EIL may be separately formed on the electron transport layer ETL.

The electron transport layer (ETL) serves to facilitate the transport of electrons, and Alq3 (tris(8-hydroxyquinolino)aluminum), PBD, TAZ, spiro-PBD, BAlq, Liq(lithium quinolate), BMB-3T , PF-6P, TPBI, COT, and may be made of any one or more selected from the group consisting of SAlq, but is not limited thereto.

The electron injection layer (EIL) may include, but is not limited to, Alq3 (tris(8-hydroxyquinolino)aluminum), PBD, TAZ, spiro-PBD, BAlq, or SAlq.

Here, the structure is not limited according to the embodiment of the present invention, and at least one of the hole injection layer (HIL), the hole transport layer (HTL), the electron transport layer (ETL), and the electron injection layer (EIL) may be omitted. have.

In addition, it is also possible to configure the hole injection layer (HIL), the hole transport layer (HTL), the electron transport layer (ETL), and the electron injection layer (EIL) as two or more layers.

The second electrode 170 is positioned on the organic emission layer 160 . For example, the second electrode 170 may be made of silver and magnesium alloy (Ag:Mg), but is not limited thereto, and the second electrode 170 may have a transflective property. That is, the light emitted from the organic light emitting layer is displayed to the outside through the second electrode 170 , and since the second electrode 170 has a transflective property, some light is directed back to the first electrode 150 . do.

Repeated reflection occurs between the first electrode 150 and the second electrode 170 on which the reflective layer 120 is formed, and the first electrode 150 and the second electrode ( 170), the light is repeatedly reflected in the cavity between them, thereby increasing the light efficiency.

In addition, light from the organic light emitting layer may be externally displayed through the first electrode 150 by forming the first electrode 150 as a transmissive electrode and forming the second electrode 170 as a reflective electrode.

The capping layer 180 is positioned on the second electrode 170 to increase the light extraction effect. The capping layer 180 is a hole transport layer (HTL) material, an electron transport layer (ETL) material, and red, green, and blue colors. It may be formed of any one of the host materials of the light emitting layer (Red EML, Green EML, Blue EML). Also, the capping layer 180 may be omitted.

2 is a flowchart illustrating a method of manufacturing an organic light emitting device according to an embodiment of the present invention.

Referring to FIG. 2 , a first conductive layer is first formed on a substrate (S201).

Next, a reflective layer is formed on the first conductive layer. (S202)

Next, a polymer in the form of particles is applied to the reflective layer. (S203) The polymer is polystyrene, polyethylene, polymethylmethacrylate, polyacrylonitrile, It may be made of any one material of polyvinyl chloride (polyvinylchloride).

The shape of the polymer in the form of particles may be any one of a spherical shape or an elliptical shape.

In addition, the shape of the polymer is spherical, and considering the thickness of the porous layer described above, the diameter of the polymer may be 1 nm or more and 170 nm or less depending on the thickness of the porous layer.

Next, a porous layer material is formed on the polymer-coated reflective layer. (S204) The porous layer material includes indium tin oxide (ITO), fluorine-containing tin oxide (FTO), antimony tin oxide (ATO), and cadmium tin oxide (CTO). ), zinc oxide (ZnO), gallium zinc oxide (GZO), and indium zinc oxide (IZO).

Next, the substrate is heat-treated to sinter the polymer to form a porous layer. (S205) The heat treatment temperature of the substrate should be at a temperature of 300 °C? It is preferably less than.

As the polymer is sintered, an empty space, that is, a void, is formed in the place where the polymer was applied, and a porous layer is formed.

Next, a second conductive layer is formed on the porous layer. (S206) The second conductive layer may be made of the same material as the first conductive layer.

Thereafter, patterning is performed by simultaneously etching the first conductive layer, the reflective layer, the porous layer, and the second conductive layer to form a first electrode.

Next, an organic light emitting layer is formed on the second conductive layer, that is, on the first electrode (S207).

Next, a second electrode is formed on the organic emission layer ( S208 ). Although not shown in FIG. 2 , it is possible to additionally form a capping layer on the second electrode.

Table 1 compares the electro-optical characteristics of the organic light emitting device according to the embodiment of the present invention and the electro-optical characteristic of the comparative example.

Although the comparative examples shown in Table 1 are not specifically shown in the detailed description and drawings of the present invention, blue, green, and red light emission of an organic light emitting device to which a first electrode including a first conductive layer, a reflective layer, and a second conductive layer is applied of the luminance results.

In addition, in the case of the embodiment shown in Table 1, as described with reference to FIGS. 1 and 2 , the first conductive layer 110 , the reflective layer 120 , the porous layer 130 , and the second conductive layer 140 including the second conductive layer 140 . The luminance results in blue, green, and red light emission of the organic light emitting device to which the first electrode 150 is applied are shown.

Referring to Table 1, the luminance at the time of blue light emission in the organic light emitting device of Comparative Example in which the porous layer was not formed on the first electrode was 335 cd/m ² , but the porous layer was formed on the first electrode. The luminance at the time of blue light emission in the organic light emitting device was 446 cd/m ² . That is, in comparison with the comparative example, the luminance at the time of blue light emission was increased to a level of 33% in the example in which the porous layer was formed on the first electrode.

In addition, looking at the results of the color coordinates CIE_X and CIE_Y at the time of blue light emission, the comparative example showed the levels of 0.138 and 0.0449, respectively, and the Example showed the levels of 0.139 and 0.0450, and the comparative example and the Example showed the same level in both cases All showed the desired color.

Similarly, as can be seen in Table 1, the luminance at the time of green light emission in the organic light emitting device of Comparative Example in which the porous layer was not formed on the first electrode was 3335 cd/m ² , but the porous layer was formed on the first electrode. The luminance at the time of green light emission in the organic light emitting device of the formed example was 3748 cd/m ² . That is, in comparison with the comparative example, the luminance at the time of green light emission was increased to a level of 12% in the example in which the porous layer was formed on the first electrode.

In addition, looking at the results of the color coordinates CIE_X and CIE_Y at the time of green light emission, the comparative example showed the levels of 0.210 and 0.740, respectively, and the Example showed the levels of 0.210 and 0.738, and the comparative example and the Example showed the same level in both cases. All showed the desired color.

In addition, in the organic light emitting device of the comparative example in which the porous layer was not formed on the first electrode, the luminance at the time of red emission was 1469 cd/m ² , but in the organic light emitting device of the example in which the porous layer was formed on the first electrode The luminance at the time of red light emission was 1588 cd/m ² . That is, in comparison with the comparative example, the luminance at the time of red light emission was increased to a level of 8% in the example in which the porous layer was formed on the first electrode.

In addition, looking at the results of the color coordinates CIE_X and CIE_Y at the time of red light emission, the comparative example showed the levels of 0.675 and 0.323, respectively, and the Example showed the levels of 0.675 and 0.324, and the comparative example and the Example showed the same level in both cases. All showed the desired color.

Since the air layer included in the pores formed in the porous layer has low thermal conductivity, it is possible to reduce the transfer of heat transferred to the reflective layer that is the metal material of the first electrode to the adjacent organic light emitting layer in a high temperature test environment of the organic light emitting device.

That is, it is possible to stably drive the organic light emitting display panel in a high temperature environment by preventing the deformation of the molecular structure of the organic material of the organic light emitting layer due to heat that can be transferred to the organic light emitting layer through the application of the porous layer, and thus the reliability of the organic light emitting display panel and lifespan characteristics.

Also, as can be seen from the results of Table 1, part of the light is reflected inside the second conductive layer and the porous layer due to the difference in refractive index in the second conductive layer having a relatively high refractive index and the porous layer having a low refractive index. It can be seen that the luminance increased as the luminous efficiency increased as the light reinforcement phenomenon occurred.

3 is a schematic cross-sectional view of an organic light emitting device according to another embodiment of the present invention.

4 is a flowchart illustrating a method of manufacturing an organic light emitting diode according to another exemplary embodiment of the present invention.

In the description of the present embodiment, a description of the same or corresponding components as in the previously described embodiment will be omitted.

Hereinafter, a structure and a manufacturing method of an organic light emitting diode according to another exemplary embodiment of the present invention will be described in detail with reference to FIGS. 3 and 4 .

As shown in FIG. 3 , in the organic light emitting diode 300 according to another embodiment of the present invention, a first electrode ( 360 , anode), an organic emission layer 370 formed on the first electrode 360 , a second electrode 380 formed on the organic emission layer 370 , and a capping layer 380 .

Also, as shown in FIG. 3 , the first electrode 360 is formed in the red, green, and blue pixel regions Rp, Gp, and Bp, and in the case of a top emission type organic light emitting device, it may be formed as a reflective electrode. It may be configured to include a first conductive layer 310 , a first porous layer 320 , a reflective layer 330 , a second porous layer 340 , and a second conductive layer 350 .

The first conductive layer 310 and the second conductive layer 350 may be formed of a transparent conductive material layer having a high work function, such as indium-tin-oxide (ITO).

The reflective layer 330 may be made of a material having high reflectance, such as silver (Ag), platinum (Pt), aluminum (Al), or an alloy containing the same.

The first porous layer 320 and the second porous layer 340 include indium tin oxide (ITO), fluorine-containing tin oxide (FTO), antimony tin oxide (ATO), cadmium tin oxide (CTO), and zinc oxide (ZnO). , gallium zinc oxide (GZO), and indium zinc oxide (IZO).

The shape of the pores of the first porous layer 320 and the second porous layer 340 may be any one of a spherical shape or an elliptical shape.

The thickness of the first porous layer 320 and the second porous layer 340 is preferably 1 nm or more and 170 nm or less. Also, the thickness of the first porous layer 320 and the thickness of the second porous layer 340 may be different from each other.

Although not specifically shown in FIG. 3, the organic light emitting layer 370 is a hole injection layer (HIL), a hole transporting layer (HTL), a red emission layer (Red EML), and a green emission layer ( Includes an emission layer (EML), an electron transporting layer (ETL), and an electron injection layer (EIL) comprising a green emission layer (Green EML) and a blue emission layer (Blue EML) can be configured.

The second electrode 380 is positioned on the organic emission layer 370 . For example, the second electrode 380 may be made of a silver and magnesium alloy (Ag:Mg), but is not limited thereto, and the second electrode 380 may have a transflective property.

The capping layer 390 is positioned on the second electrode 380 to increase the light extraction effect, and may be omitted.

4 is a flowchart illustrating a method of manufacturing an organic light emitting device according to another exemplary embodiment of the present invention.

Referring to FIG. 4 , a first conductive layer is first formed on a substrate ( S401 ).

Next, a polymer in particle form is applied to the first conductive layer. (S402) The polymer is polystyrene, polyethylene, polymethylmethacrylate, polyacrylonitrile ( It may be made of any one of polyacrylonitrile) and polyvinyl chloride (polyvinylchloride).

The shape of the polymer in the form of particles may be any one of a spherical shape or an elliptical shape.

In addition, the shape of the polymer is spherical, and considering the thickness of the porous layer described above, the diameter of the polymer may be 1 nm or more and 170 nm or less depending on the thickness of the porous layer.

Next, a porous layer material is formed on the first conductive layer coated with the polymer (S403). The porous layer material includes indium tin oxide (ITO), fluorine-containing tin oxide (FTO), antimony tin oxide (ATO), and cadmium tin. It may be made of any one of oxide (CTO), zinc oxide (ZnO), gallium zinc oxide (GZO), and indium zinc oxide (IZO).

Next, the substrate is heat-treated to sinter the polymer to form a first porous layer. (S404) The heat treatment temperature of the substrate should be at a temperature of 300° C.? It is preferably less than.

As the polymer is sintered, an empty space, that is, a void, is formed in the place where the polymer was applied, and a first porous layer is formed.

Next, a reflective layer is formed on the first porous layer. (S405)

Next, a polymer in particle form is applied to the reflective layer. (S406) The polymer is polystyrene, polyethylene, polymethylmethacrylate, polyacrylonitrile, It may be made of any one material of polyvinyl chloride (polyvinylchloride).

The shape of the polymer in the form of particles may be any one of a spherical shape or an elliptical shape.

In addition, the shape of the polymer may be spherical, and the diameter of the polymer may be 1 nm or more and 170 nm or less.

Next, a porous layer material is formed on the polymer-coated reflective layer. (S407) The porous layer material includes indium tin oxide (ITO), fluorine-containing tin oxide (FTO), antimony tin oxide (ATO), and cadmium tin oxide (CTO). ), zinc oxide (ZnO), gallium zinc oxide (GZO), and indium zinc oxide (IZO).

Next, the substrate is heat-treated to sinter the polymer to form a second porous layer. (S408) The heat treatment temperature of the substrate should be a temperature at which the first conductive layer is not damaged while sintering the polymer in the form of particles, and is less than 300°C. it is preferable

As the polymer is sintered, an empty space, that is, a void, is formed in the place where the polymer was applied, and a second porous layer is formed.

Next, a second conductive layer is formed on the second porous layer (S409).

The second conductive layer may be made of the same material as the first conductive layer.

Thereafter, patterning is performed by simultaneously etching the first conductive layer, the reflective layer, the porous layer, and the second conductive layer to form a first electrode.

Next, an organic emission layer is formed on the second conductive layer, that is, on the first electrode (S410).

Next, a second electrode is formed on the organic emission layer (S411). Although not shown in FIG. 4, it is possible to additionally form a capping layer on the second electrode.

As can be seen in FIGS. 3 and 4 , the first porous layer 320 having spherical pores is formed between the first conductive layer 310 and the reflective layer 330 , and further spherical pores are formed. It is also possible to form the reflective layer 330 and the second conductive layer 350 on the formed second porous layer 340 . It is possible to obtain a more improved effect of preventing heat transfer from the first electrode 360 to the organic light emitting layer 370 through the second porous layer 340 additionally formed in this way.

5 is a schematic cross-sectional view of an organic light emitting diode according to another embodiment of the present invention.

In the description of the present embodiment, a description of the same or corresponding components as in the previously described embodiment will be omitted.

5 , in the organic light emitting diode 500 according to another embodiment of the present invention, a first electrode stacked on a substrate on which red, green, and blue pixel regions Rp, Gp, and Bp are defined. 550 , an organic emission layer 560 formed on the first electrode 550 , a second electrode 570 formed on the organic emission layer 560 , and a capping layer 580 .

The first electrode 550 is formed in the red, green, and blue pixel regions Rp, Gp, and Bp, and includes a first conductive layer 510 , a reflective layer 520 , a porous layer 530 , and a second conductive layer ( 540) may be included.

The porous layer 530 may include indium tin oxide (ITO), fluorine-containing tin oxide (FTO), antimony tin oxide (ATO), cadmium tin oxide (CTO), zinc oxide (ZnO), gallium zinc oxide (GZO), and indium oxide. It may be made of a material such as zinc (IZO).

The thickness of the porous layer 530 is generated while a portion of light is reflected due to a difference in refractive index between the porous layer 530 having a low refractive index and the second conductive layer 540 having a relatively high refractive index. Considering the reinforcement resistance, it is preferably 1 nm or more and 170 nm or less.

In addition, as can be seen in FIG. 5 , the shape of the pores of the porous layer 530 formed in the organic light emitting device 500 according to another embodiment of the present invention can be formed in an elliptical shape, and the present invention It is possible to obtain an effect of preventing heat transfer from the first electrode 550 to the organic light emitting layer 560 in the same manner as in the porous layer in which spherical pores are formed as in the previous embodiment.

In addition, as in another embodiment of the present invention (see FIG. 3 ), it is also possible to additionally form an elliptical porous layer 530 between the first conductive layer 510 and the reflective layer 520 .

An organic light emitting diode according to an embodiment of the present invention includes a first electrode including a first conductive layer, a second conductive layer, and a reflective layer formed therebetween, a second electrode positioned opposite the first electrode, the first electrode, and the second electrode It may include an organic light emitting layer formed between the two electrodes and a porous layer formed in the first electrode.

The porous layer may be positioned between the reflective layer and the second conductive layer.

Porous layer is indium tin oxide (ITO), fluorine-containing tin oxide (FTO), antimony tin oxide (ATO), cadmium tin oxide (CTO), zinc oxide (ZnO), gallium zinc oxide (GZO), indium zinc oxide (IZO) ) can be any one of

The thickness of the porous layer may be 1 nm or more and 170 nm or less.

The shape of the pores of the porous layer may be any one of a spherical shape or an elliptical shape.

The reflective layer may be formed of any one of silver (Ag), platinum (Pt), aluminum (Al), or an alloy including the same.

The porous layer may reduce heat transfer from the first electrode to the organic light emitting layer.

The porous layer may include a first porous layer positioned between the first conductive layer and the reflective layer and a second porous layer positioned between the reflective layer and the second conductive layer.

The thickness of the first porous layer and the thickness of the second porous layer may be different from each other.

In addition, the method of manufacturing an organic light emitting device according to an embodiment of the present invention includes the steps of forming a first conductive layer on a substrate, forming a reflective layer on the first conductive layer, applying a polymer in particle form to the reflective layer, and adding the polymer to the reflective layer. Forming a porous layer material on the applied reflective layer, heat-treating the substrate to sinter the polymer to form a porous layer, forming a second conductive layer on the porous layer, and forming an organic light emitting layer on the second conductive layer and forming a second electrode on the organic light emitting layer.

In addition, the method of manufacturing an organic light emitting device according to another embodiment of the present invention includes the steps of forming a first conductive layer on a substrate, applying a polymer in particle form to the first conductive layer, and applying the polymer to the first conductive layer. Forming a porous layer material, heat-treating the substrate to sinter the polymer to form a first porous layer, forming a reflective layer on the first porous layer, applying a polymer in particle form to the reflective layer, and applying the polymer Forming a porous layer material on the reflective layer, heat-treating the substrate to sinter the polymer to form a second porous layer, forming a second conductive layer on the second porous layer, and forming an organic light emitting layer on the second conductive layer It may include forming a second electrode on the organic light emitting layer.

The polymer may be made of any one of polystyrene, polyethylene, polymethylmethacrylate, polyacrylonitrile, and polyvinylchloride.

The shape of the polymer is spherical, and the diameter of the polymer may be 1 nm or more and 170 nm or less.

Porous layer materials include indium tin oxide (ITO), fluorine-containing tin oxide (FTO), antimony tin oxide (ATO), cadmium tin oxide (CTO), zinc oxide (ZnO), gallium zinc oxide (GZO), indium zinc oxide ( IZO).

The heat treatment temperature may be 300° C. or less.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made within the scope without departing from the technical spirit of the present invention. . Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be construed by the claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

100, 300, 500: organic light emitting device
110, 310, 510: first conductive layer
120, 330, 520: reflective layer
130, 530: porous layer
140, 350, 540: second conductive layer
150, 360, 550: first electrode
160, 370, 560: organic light emitting layer
170, 380, 570: second electrode
180, 390, 580: capping layer
320: first porous layer
340: second porous layer

Claims (15)

a first electrode including a first conductive layer, a second conductive layer, and a reflective layer formed therebetween;
a second electrode positioned to face the first electrode;
an organic light emitting layer formed between the first electrode and the second electrode; and
It includes a porous layer formed in the first electrode,
The shape of the pores of the porous layer is made of any one of spherical or oval,
The porous layer reduces heat transfer from the reflective layer to the organic light emitting layer,
The respective pores are formed in the same size, and do not contact each other in the porous layer, an organic light emitting device. According to claim 1,
The porous layer is an organic light emitting device positioned between the reflective layer and the second conductive layer. 3. The method of claim 2,
The porous layer is indium tin oxide (ITO), fluorine-containing tin oxide (FTO), antimony tin oxide (ATO), cadmium tin oxide (CTO), zinc oxide (ZnO), gallium zinc oxide (GZO), indium zinc oxide ( IZO) an organic light emitting device made of any one of. 4. The method of claim 3,
The porous layer has a thickness of 1 nm or more and 170 nm or less. delete 3. The method of claim 2,
The reflective layer is an organic light emitting device made of any one of silver (Ag), platinum (Pt), aluminum (Al), or an alloy containing the same. delete According to claim 1,
The porous layer includes a first porous layer positioned between the first conductive layer and the reflective layer and a second porous layer positioned between the reflective layer and the second conductive layer. 9. The method of claim 8,
The thickness of the first porous layer and the thickness of the second porous layer are different from each other. forming a first conductive layer on the substrate;
forming a reflective layer on the first conductive layer;
applying a polymer in the form of particles to the reflective layer;
forming a porous layer material on the reflective layer to which the polymer is applied;
forming a porous layer by heat-treating the substrate to sinter the polymer;
forming a second conductive layer on the porous layer;
forming an organic light emitting layer on the second conductive layer; and
forming a second electrode on the organic light emitting layer;
The shape of the pores of the porous layer is made of any one of spherical or oval,
The porous layer reduces heat transfer from the reflective layer to the organic light emitting layer,
The respective pores are formed in the same size, and do not contact each other in the porous layer, the method of manufacturing an organic light emitting device. forming a first conductive layer on the substrate;
applying a polymer in the form of particles to the first conductive layer;
forming a porous layer material on the first conductive layer to which the polymer is applied;
forming a first porous layer by heat-treating the substrate to sinter the polymer;
forming a reflective layer on the first porous layer;
applying a polymer in the form of particles to the reflective layer;
forming a porous layer material on the reflective layer to which the polymer is applied;
forming a second porous layer by heat-treating the substrate to sinter the polymer;
forming a second conductive layer on the second porous layer;
forming an organic light emitting layer on the second conductive layer; and
forming a second electrode on the organic light emitting layer;
The shape of the pores of the first porous layer and the second porous layer is made of any one of a sphere or an ellipse,
The first porous layer and the second porous layer reduce heat transfer from the reflective layer to the organic light emitting layer,
The respective pores are formed in the same size, and do not contact each other in the porous layer, the method of manufacturing an organic light emitting device. 12. The method according to any one of claims 10 to 11,
The polymer is polystyrene, polyethylene, polymethyl methacrylate, polyacrylonitrile (polyacrylonitrile), polyvinyl chloride (polyvinylchloride) method of manufacturing an organic light emitting device made of any one of. 13. The method of claim 12,
The shape of the polymer is spherical, and the diameter of the polymer is 1 nm or more and 170 nm or less. 14. The method of claim 13,
The porous layer material is indium tin oxide (ITO), fluorine-containing tin oxide (FTO), antimony tin oxide (ATO), cadmium tin oxide (CTO), zinc oxide (ZnO), gallium zinc oxide (GZO), indium zinc oxide A method of manufacturing an organic light-emitting device comprising any one of (IZO). 12. The method according to any one of claims 10 to 11,
The heat treatment temperature is 300 ℃ or less manufacturing method of an organic light emitting device.

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