CN104143929B - Ultra-low voltage self-powered rectifier circuit used for obtaining RF energy - Google Patents
Ultra-low voltage self-powered rectifier circuit used for obtaining RF energy Download PDFInfo
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- CN104143929B CN104143929B CN201410360864.4A CN201410360864A CN104143929B CN 104143929 B CN104143929 B CN 104143929B CN 201410360864 A CN201410360864 A CN 201410360864A CN 104143929 B CN104143929 B CN 104143929B
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Abstract
The invention discloses an ultra-low voltage self-powered rectifier circuit used for obtaining RF energy. The rectifier circuit is characterized by comprising a full-wave rectifier circuit, and the full-wave rectifier circuit comprises a self-biased bridge type rectifier circuit and a biasing circuit. The self-biased bridge type rectifier circuit comprises two NMOS transistors and two PMOS transistors, wherein the two NMOS transistors are connected to be in a self-biased mode, and the two PMOS transistors are connected to be in a self-biased mode. The drain ends of the two NMOS transistors are connected together in a short circuit mode and grounded at the same time; the drain ends of the two PMOS transistors are connected together in a short circuit mode to serve as output ends of the bridge type rectifier circuit. The ultra-low voltage self-powered rectifier circuit used for obtaining the RF energy can effectively convert the energy obtained from external space into direct-current voltage which can be directly used for supplying power to electronic equipment to finish AC/DC conversion, and meanwhile the external energy is utilized to the maximum degree.
Description
Technical field
The present invention relates to a kind of ultralow pressure self-powered rectifier circuit for RF energy harvestings.
Background technology
With the continuous development of portable consumer electronics product and deep-submic ron CMOS integrated circuits technology, environmental pollution
The major reason for limiting IC designs has been increasingly becoming with energy loss.In order to solve this problem, energy harvesting technology is used as one
New alternative power supply is planted, increasing concern has been obtained.
Energy harvesting technology is referred to from space outerpace and obtains unnecessary energy, and is translated into available electric energy.It is outside
The energy source that space includes has：Vibrational energy, thermal gradient energy, luminous energy and radio frequency energy (radio frequency energy be RF can, RF:Radio
Frequency).Wherein, RF can be due to not limited by time and space, working environment freedom, the advantages of transmission range is big, into
One of mainstream research direction for present energy acquiring technology, can as an alternative battery for long-term maintenance-free system offer needed for
Electric energy.
Rectifier circuit is the core cell in energy harvesting technology, and the small AC signal for being responsible for collecting antenna turns
Available d. c. voltage signal is changed to, the translation function with AC-to DC (AC/DC).Preferably rectifier circuit must be expired
The working condition of sufficient ultralow pressure, and sufficiently large output voltage can be provided to maximize the energy acquired in conversion, meanwhile, from
The energy that body is consumed should be little as far as possible.
The content of the invention
Present invention is primarily targeted at providing a kind of ultralow pressure self-powered rectifier circuit for RF energy harvestings, energy
It is enough effectively by the energy obtained from space outerpace be converted to can directly for power electronic equipment DC voltage, complete AC/DC
Conversion, while maximally utilize acquired outside energy.
In order to achieve the above object, the technical scheme is that：
A kind of ultralow pressure self-powered rectifier circuit for RF energy harvestings, it is characterised in that：Including full wave rectifier
Circuit and active switch pipe circuit；Full-wave rectifying circuit includes automatic biasing bridge rectifier and biasing circuit；The automatic biasing
Bridge rectifier includes two nmos pass transistors for connecting into automatic biasing form and two PMOS transistors, two NMOS crystal
The drain terminal of pipe is shorted together, while ground connection；The drain terminal of two PMOS transistors is shorted together, used as bridge rectifier
Outfan；The biasing circuit includes, the ultralow pressure bleeder circuit that a PMOS transistor and a nmos pass transistor are constituted,
PMOS transistor and nmos pass transistor series connection, common port are connected to the substrate of the PMOS transistor in the bridge rectifier
End, there is provided Substrate bias signal.
Used as a kind of technical scheme of optimization, the active switch pipe circuit includes PMOS transistor, PMOS transistor
Source connects the outfan of the bridge rectifier, and the drain terminal of PMOS is used as the defeated of the ultralow pressure self-powered rectifier circuit
Go out end；The active switch pipe circuit includes common gate operation amplifier circuit, the in-phase input end connection of the operational amplifier
To the drain terminal of PMOS switch pipe, while be connected to the output of ultralow pressure self-powered rectifier circuit, the operational amplifier it is anti-phase
Input is connected to the source of PMOS switch pipe, while being connected to the output of the bridge rectifier；The active switch pipe
Circuit includes substrate modulation circuit, and the substrate modulation circuit includes three PMOS transistors and an inverter circuit.
Used as a kind of technical scheme of optimization, the full-wave rectifying circuit also includes automatic biasing bridge rectifier, wherein,
All transistors are all connected with into group nmos pass transistor of automatic biasing structure, i.e., and are connected with the source of PMOS transistor, connect input and hand over
The positive terminal of stream voltage, another group of nmos pass transistor are connected with the source of PMOS transistor, connect the end of oppisite phase of input ac voltage,
Grid end control signal of the input ac voltage as transistor, realizes automatic biasing structure, and the drain terminal of two nmos pass transistors is connected
And be grounded, the drain terminal of two PMOS transistors is connected, and as the outfan of full-wave rectifying circuit.
Used as a kind of technical scheme of optimization, the biasing circuit includes that the PMOS for connecting into diode structure and NMOS are brilliant
Body pipe, wherein, the grid end of NMOS connects the source of PMOS, and connects the outfan of the self-powered commutator, the drain terminal of PMOS and
The drain terminal of NMOS connects, as the outfan of biasing circuit, the lining of the PMOS transistor being connected in the bridge rectifier
Bottom, there is provided offset signal.
Used as a kind of technical scheme of optimization, the active switch pipe circuit also includes PMOS active switch pipes, preferred
Under principle, PMOS transistor transmission high level performance is better than NMOS.
Used as a kind of technical scheme of optimization, the active switch pipe circuit also includes common gate operation amplifier circuit,
The operation amplifier circuit includes starting level circuit, three part of common gate input stage circuit and output-stage circuit.
Used as a kind of technical scheme of optimization, the common gate operation amplifier circuit also includes starting level circuit, including
A pair of NMOS current mirrors, common-source stage PMOS active loads and source class follower PMOS transistors, provide for operation amplifier circuit
Enabling signal, after operational amplifier normal work, start-up circuit turns off to save power consumption.
Used as a kind of technical scheme of optimization, the common gate operation amplifier circuit also includes common gate input stage electricity
Road, including a pair of common gate Differential Input nmos pass transistors and PMOS current mirror active loads, input signal is added in nmos differential
To source, to improve gain and bandwidth, and reduce supply voltage, PMOS current mirrors complete double-width grinding to Single-end output
Conversion.
Used as a kind of technical scheme of optimization, the common gate operation amplifier circuit also includes output-stage circuit, by same
Phase Schmidt trigger is constituted, and with direct current hysteresis voltage, can be filtered the noise in input signal, be obtained a clean number
Word output signal.
Used as a kind of technical scheme of optimization, the active switch pipe circuit includes substrate modulation circuit and start-up circuit；
Wherein, the source and drain of active switch pipe is connected with substrate respectively by two PMOS transistors, the common gate operational amplifier
Outfan connect the grid end of one of PMOS transistor, the outfan of the common gate operational amplifier is produced through phase inverter
After raw inversion signal, the grid end of another PMOS transistor is connected to, controls being switched on and off for PMOS transistor, this two
The substrate terminal of active switch pipe is connected to high potential by PMOS transistor alternating；Start-up circuit is by connecting into diode structure
PMOS transistor is constituted, and the PMOS transistor is connected to the source and drain end of active switch pipe, it is to avoid active switch pipe is operated in zero shape
State, after active switch pipe normal work, the PMOS diodes turn off to save power consumption.
Compared with prior art, rectifier circuit of the present invention, simple structure, high conversion efficiency, as a result of
Ultralow pressure biasing circuit, provides offset signal for bridge rectifier, improves output voltage swing；Put using common gate computing
Big device structure, is that active switch pipe and substrate modulation circuit provide clean digital controlled signal, with low in energy consumption, gain band
Wide product is big, the advantage of high conversion efficiency.
Description of the drawings
Fig. 1 is the structured flowchart of ultralow pressure self-powered high efficiency rectifier circuit of the present invention；
Fig. 2 is the structured flowchart of full-wave rectifying circuit of the present invention；
Fig. 3 is the structured flowchart of active switch pipe circuit of the present invention；
Fig. 4 is the structured flowchart of common gate operation amplifier circuit of the present invention.
Specific embodiment
For cause the object, technical solutions and advantages of the present invention express and must become more apparent, below in conjunction with the accompanying drawings and tool
Body embodiment is further described in detail again to the present invention.
First technical term according to the present invention is described as follows：
PMOS：P-channel metal oxide semiconductor FET, P-channel metal-oxide-semiconductor field
Effect transistor；
NMOS：N-channel metal oxide semiconductor FET, N-channel MOS field
Effect transistor；
As shown in figure 1, an embodiment of ultralow pressure self-powered high efficiency rectifier circuit of the present invention includes that all-wave is whole
Current circuit and active switch pipe circuit, wherein：
Full-wave rectifying circuit described in this embodiment of the invention includes automatic biasing bridge rectifier and ultralow pressure biasing circuit.
The automatic biasing bridge rectifier includes two nmos pass transistors for connecting into automatic biasing form and two PMOS
Transistor, as shown in Fig. 2 the drain terminal of two nmos pass transistors is shorted together, while ground connection；The drain terminal of two PMOS transistors
Be shorted together, as the outfan of bridge rectifier, one group of NMOS and PMOS transistor grid by input exchange signal
Positive phase voltage drive, the grid of another group of NMOS and PMOS transistor is driven by the reverse voltage of input exchange signal, with biography
The diode structure MOS transistor of system is compared, and automatic biasing MOS transistor reduces conducting resistance, it is ensured that wider output electricity
Pressure scope, improves carrying load ability, and the substrate terminal ground connection of nmos pass transistor prevents ghost effect, the substrate of PMOS transistor
Driven by the biasing circuit, reduce its threshold voltage.
The ultralow pressure biasing circuit, the grid end of PMOS transistor and drain terminal in series by PMOS and nmos pass transistor
It is connected, is connected as diode, the grid end of NMOS is connected to, the output of the source of PMOS transistor and the rectifier circuit
End, i.e. self-powered structure, reduce the minimum needed for biasing circuit, realize ultralow pressure low power dissipation design, PMOS
With the common port of nmos pass transistor as biasing circuit output, the PMOS transistor being connected in the bridge rectifier
Substrate terminal, provides Substrate bias signal for automatic biasing PMOS transistor, reduces the threshold voltage and electric conduction of PMOS transistor
Resistance, improves the output voltage of the bridge rectifier, it is adaptable to which ultralow pressure is designed.
Described in this embodiment of the invention, active switch pipe circuit includes：PMOS active switch pipes, common gate operational amplifier
With substrate modulation circuit.
The PMOS active switch pipe, as shown in figure 3, its source class is connected to the outfan of the full-wave rectifying circuit, and
The inverting input of the common gate operational amplifier is connected to, drain terminal is the ultralow pressure self-powered high efficiency rectifier circuit
Outfan, and the in-phase input end of the common gate operational amplifier is connected to, while providing working power electricity for whole circuit
Pressure, grid end are driven by the output signal of the common gate operational amplifier, and operational amplifier controls active PMOS switch pipe
Turn-on and turn-off, substrate terminal are driven by the substrate modulation circuit, to reduce threshold voltage, improve output voltage swing.
The common gate operational amplifier includes starting level circuit, common gate input stage circuit and output-stage circuit, such as schemes
Shown in 4.
In the startup level circuit, the source of transistor MP4, MP5 is connected with substrate terminal, and is connected to the commutator electricity
The outfan on road, the grid end of the MP4 transistors of diode are connected with drain terminal, and are connected to the drain terminal of transistor MN4, MN4
Source and Substrate ground, the grid end of MN4 is connected with the grid end of NM5 and drain terminal, constitutes NMOS current-mirror structures, the source of MN5
And Substrate ground, drain terminal as it is described start level circuit output signal, provide initial for the common gate input stage circuit
Trigger, it is to avoid circuit is operated in zero state, the drain terminal of common-source stage transistor MP5 is connected with the drain terminal of MN5, grid end with it is described
The grid end of the MP6-MP7 current-mirror structures in common gate input stage circuit is connected, and is connected to source class follower transistor MN6's
Drain terminal, the grid end of MN6 are connected to the drain terminal of MP4, and its substrate and source are grounded, and the effect of MN6 is, when common gate operation amplifier
After device circuit starts normal work, the shut-off of level circuit will be started, to save power consumption, ultralow pressure design requirement will be met.
The common gate input stage circuit includes that common gate input difference is the fortune to the source of pipe MN7 and MN8, MN7
The inverting input of amplifier is calculated, the source of MN8 is the grid end phase of the in-phase input end of the operational amplifier, MN7 and MN8
Even, and with the outfan for starting level circuit it is connected, the Substrate ground of MN7 and MN8, the drain terminal of MN7 connect the drain terminal and grid of MP6
End, the drain terminal of MN8 connect the drain terminal of MP7, and the source as the outfan of the input stage circuit, MP6 and MP7 and substrate phase
Connect, and be connected to the outfan of the rectifier circuit, MP6 is connected with the grid end of MP7, common gate input difference is constituted to pipe
Active electric current mirror is loaded, and double-width grinding is converted to Single-end output.
The output-stage circuit is made up of homophase Schmidt trigger, and transistor MP8 and MN9 constitute first order phase inverter.
The second level phase inverter cascade constituted with MP10 and MN11, transistor MP8 is connected with the grid of MN9, used as first order phase inverter
Input, and be connected to the outfan of the operational amplifier input stage, transistor MP10 is connected with the grid of MN11, as
The input of second level phase inverter, is connected to the drain terminal of MP8 and MN9, while be connected with the drain terminal of MP9 and MN10, transistor MP10
It is connected with the drain terminal of MN11, as the outfan of the operational amplifier, while being connected with the grid end of MP9 and MN10, owns
The source of PMOS transistor is connected with substrate, and is connected to the outfan of the rectifier circuit, the source of all nmos pass transistors
End is connected with substrate, and is grounded, and transistor MP9 and MN10 are used for adjusting the switching threshold of first order phase inverter, to realize direct current
Hysteresis voltage, eliminates the noise in input signal, accelerates the reversal rate of signal, and the output stage final output one is more dry
Net digital signal.
In the substrate modulation circuit, the source of transistor MPB1 is connected with substrate, and is connected to PMOS active switch pipes
Source, the drain terminal of MPB1 is connected with the drain terminal of MPB2, and is connected to the substrate terminal of PMOS active switch pipes, and transistor
The substrate terminal of MPB3, the source of transistor MPB2 are connected with substrate, and are connected to the drain terminal of PMOS active switch pipes, used as described
The outfan of rectifier circuit, while be connected to grid end and the drain terminal of MPB3, the source of MPB3 and the source of PMOS active switch pipes
End is connected, and the grid end of MPB1 is driven by the output signal of the operational amplifier, the output signal connection of the operational amplifier
To phase inverter Inv, the output signal of Inv is connected to the grid end of MPB2, MPB1 and MPB2 pipe alternate conductions, to ensure the PMOS
The substrate terminal of active switch pipe is connected to high potential all the time, so as to reduce its conducting resistance, improves output voltage swing, transistor
MPB3 is connected in parallel on the two ends of PMOS active switch pipes, it is ensured that switching tube it is normally-open, it is to avoid zero working condition, once PMOS
Active switch pipe normal work, MPB3 shut-offs, to reduce power consumption.
The threshold voltage expression formula of PMOS transistor is
Wherein, VTH0It is the initial threshold voltage of single tube PMOS transistor, ΦFIt is surface potential, about 0.3V, VBSIt is PMOS
Potential difference between transistor substrate end Bulk and source Source, γsubIt is the bulk effect factor, representative value is about 0.51/2.
The threshold voltage V of PMOS transistorTH,PBy potential difference V between substrate terminal and sourceBSModulation, therefore can be with
The change of substrate terminal potential and change.|VBS| increase, VTH,PReduce.
The leakage current I of PMOS transistorDSIt is represented by：
Wherein, μPFor hole mobility, COXFor unit area gate oxide capacitance, λ is channel length modulation coefficient,
For the breadth length ratio of PMOS transistor, VGSFor the gate source voltage of PMOS transistor, VDSFor the drain-source voltage of PMOS transistor, VDS,sat
For the saturation voltage of PMOS transistor.Leakage current IDSWith VTH,PReduction and increase.
The output resistance r of PMOS transistor0For：
The output resistance of PMOS transistor is with IDSIncrease and reduce, the conduction voltage drop of PMOS reduces, defeated so as to improve
Go out voltage swing.
The embodiment of the present invention adopts the conversion of full-wave rectifying circuit and active switch pipe circuit realiration AC-to DC, will be from
The RF energy obtained in peripheral environment be converted to can directly electricity supply and use equipment work supply voltage.Full-wave rectifying circuit adopts bridge
Formula rectifier structure, all MOS transistors adopt automatic biasing connected mode, reduce conducting resistance by increasing conducting electric current, real
Maximum magnitude output voltage swing is showed；It is inclined that ultralow pressure biasing circuit provides substrate for the PMOS transistor in bridge rectifier
Confidence number, reduces the threshold voltage of PMOS transistor, so as to reduce the conducting resistance of PMOS, improves output voltage.This
Inventive embodiments export galvanic current pressure using PMOS active switch pipe, using common gate input operational amplifier circuit control
PMOS active switch pipe processed is switched on and off, and common gate operational amplifier circuit structure is simple, without the need for miller-compensated, it is possible to provide
Low input impedance and high output impedance, and high gain, with roomy, required supply voltage and bulk driven operational amplifier phase
Together, it is adaptable to ultralow pressure low power dissipation design.Output stage adopts Schmidt trigger, effectively eliminates the noise in input signal,
Obtain preferable digital signal to control active switch pipe and Substrate bias circuit, improve system reliability.Substrate bias electricity
Road reduces the conducting resistance of PMOS active switch pipes, improves output voltage swing, while the normally-open of circuit is ensure that,
Avoid zero working condition.
The embodiment of the present invention can work under ultralow pressure environment, effectively improve voltage conversion efficiency and the work(of rectifier circuit
Rate conversion efficiency, realizes that ultralow pressure self-powered high efficiency energy obtains circuit design.
It is described above to be merely exemplary for the purpose of the present invention, and it is nonrestrictive, and those of ordinary skill in the art understand,
In the case of the spirit and scope limited without departing from claims, many modifications, change or equivalent can be made, but all
To fall within the scope of protection of the present invention.
Claims (5)
1. a kind of ultralow pressure self-powered rectifier circuit for RF energy harvestings, it is characterised in that：Including full wave rectifier electricity
Road and active switch pipe circuit, full-wave rectifying circuit include automatic biasing bridge rectifier and biasing circuit；
The automatic biasing bridge rectifier includes two nmos pass transistors for connecting into automatic biasing form and two PMOS crystal
Pipe, the drain terminal of two nmos pass transistors are shorted together, while ground connection；The drain terminal of two PMOS transistors is shorted together, and makees
For the outfan of bridge rectifier；
The biasing circuit includes, the ultralow pressure bleeder circuit that a PMOS transistor and a nmos pass transistor are constituted, PMOS
Transistor and nmos pass transistor series connection, common port are connected to the substrate terminal of the PMOS transistor in the bridge rectifier, carry
For Substrate bias signal；
The active switch pipe circuit includes PMOS transistor, and the source of PMOS transistor connects the defeated of the bridge rectifier
Go out end, the outfan of the drain terminal of PMOS as the ultralow pressure self-powered rectifier circuit；
The active switch pipe circuit includes common gate operation amplifier circuit, and the in-phase input end of common gate operational amplifier connects
Be connected to the drain terminal of PMOS switch pipe, while be connected to the output of ultralow pressure self-powered rectifier circuit, the operational amplifier it is anti-
Phase input is connected to the source of PMOS switch pipe, while being connected to the output of the bridge rectifier；
The active switch pipe circuit includes substrate modulation circuit and start-up circuit；
Wherein, the source and drain of active switch pipe is connected with substrate respectively by two PMOS transistors, the common gate computing is put
The outfan of big device connects the grid end of one of PMOS transistor, and the outfan of the common gate operational amplifier is through anti-phase
After device produces inversion signal, the grid end of another PMOS transistor is connected to, controls being switched on and off for PMOS transistor, this two
The substrate terminal of active switch pipe is connected to high potential by individual PMOS transistor alternating；
Start-up circuit is made up of the PMOS transistor for connecting into diode structure, and the PMOS transistor is connected to active switch pipe
Source and drain end, it is to avoid active switch pipe is operated in zero state, after active switch pipe normal work, the PMOS diodes turn off to save
Save power consumption.
In automatic biasing bridge rectifier, all transistors are all connected with into group nmos pass transistor of automatic biasing structure, i.e., one and PMOS
The source of transistor is connected, and connects the source phase of the positive terminal of input ac voltage, another group of nmos pass transistor and PMOS transistor
Even, the end of oppisite phase of input ac voltage is connect, grid end control signal of the input ac voltage as transistor realizes that automatic biasing is tied
Structure, the drain terminal of two nmos pass transistors are connected and are grounded, and the drain terminal of two PMOS transistors is connected, and as full-wave rectifying circuit
Outfan.
Biasing circuit includes PMOS and the nmos pass transistor for connecting into diode structure, wherein, the grid end connection PMOS's of NMOS
Source, and the outfan of the self-powered commutator is connect, the drain terminal of the drain terminal and NMOS of PMOS connects, used as the defeated of biasing circuit
Go out end, the substrate terminal of the PMOS transistor being connected in the bridge rectifier, there is provided offset signal.
2. the ultralow pressure self-powered rectifier circuit for RF energy harvestings according to claim 1, it is characterised in that：Institute
Stating active switch pipe circuit also includes common gate operation amplifier circuit, and the operation amplifier circuit includes starting level circuit, is total to
Three part of grid input stage circuit and output-stage circuit.
3. the ultralow pressure self-powered rectifier circuit for RF energy harvestings according to claim 1, it is characterised in that：Institute
Stating common gate operation amplifier circuit also includes starting level circuit, including a pair of NMOS current mirrors, common-source stage PMOS active loads,
With source class follower nmos pass transistor, start level circuit provide enabling signal for operation amplifier circuit, when operational amplifier just
After often working, start-up circuit turns off to save power consumption.
4. the ultralow pressure self-powered rectifier circuit for RF energy harvestings according to claim 1, it is characterised in that：Institute
Stating common gate operation amplifier circuit also includes common gate input stage circuit, including a pair of common gate Differential Input nmos pass transistors
With PMOS current mirror active loads, input signal is added in the source of nmos differential pair, to improve gain and bandwidth, and reduces power supply
Voltage, PMOS current mirrors complete double-width grinding to the conversion of Single-end output.
5. the ultralow pressure self-powered rectifier circuit for RF energy harvestings according to claim 1, it is characterised in that：Institute
Stating common gate operation amplifier circuit also includes output-stage circuit, is made up of homophase Schmidt trigger, with direct current hysteresis electricity
Pressure, can filter the noise in input signal, obtain a clean digital output signal.
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| CN201410360864.4A CN104143929B (en) | 2014-07-28 | 2014-07-28 | Ultra-low voltage self-powered rectifier circuit used for obtaining RF energy |
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| CN109804563B (en) * | 2016-10-14 | 2021-01-29 | 华为技术有限公司 | Rectifying circuit and rectifier |
| CN108227799A (en) * | 2016-12-09 | 2018-06-29 | 北京兆易创新科技股份有限公司 | A kind of regulator circuit |
| CN108922886B (en) * | 2018-08-24 | 2021-11-02 | 电子科技大学 | RC circuit triggering bidirectional ESD protection circuit based on SOI technology |
| WO2021212302A1 (en) * | 2020-04-21 | 2021-10-28 | 深圳技术大学 | Rectifier circuit having complementary dynamic substrate bias |
| CN115224662A (en) * | 2022-08-05 | 2022-10-21 | 龙芯中科(南京)技术有限公司 | Over-temperature protection circuit of functional circuit and power supply chip |
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