CN104133515A - Pmos管衬底选择电路 - Google Patents
Pmos管衬底选择电路 Download PDFInfo
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- CN104133515A CN104133515A CN201410325012.1A CN201410325012A CN104133515A CN 104133515 A CN104133515 A CN 104133515A CN 201410325012 A CN201410325012 A CN 201410325012A CN 104133515 A CN104133515 A CN 104133515A
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- 238000007493 shaping process Methods 0.000 claims description 3
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CN201410325012.1A CN104133515B (zh) | 2014-07-09 | 2014-07-09 | Pmos管衬底选择电路 |
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CN201410325012.1A CN104133515B (zh) | 2014-07-09 | 2014-07-09 | Pmos管衬底选择电路 |
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CN104133515A true CN104133515A (zh) | 2014-11-05 |
CN104133515B CN104133515B (zh) | 2016-06-15 |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104767518A (zh) * | 2015-04-20 | 2015-07-08 | 成都岷创科技有限公司 | 基于cmos的衬底转换电路 |
CN105915056A (zh) * | 2016-05-30 | 2016-08-31 | 武汉新芯集成电路制造有限公司 | 一种防止倒灌电流的升压电路 |
CN106026638A (zh) * | 2016-07-15 | 2016-10-12 | 成都信息工程大学 | 多模式开关电容电路 |
CN106300637A (zh) * | 2016-08-30 | 2017-01-04 | 杭州旗捷科技有限公司 | 芯片供电电路、芯片、墨盒 |
CN110045779A (zh) * | 2019-03-27 | 2019-07-23 | 华中科技大学 | 一种电压选择电路及方法 |
CN110518687A (zh) * | 2019-08-06 | 2019-11-29 | 成都锐成芯微科技股份有限公司 | 一种电源自动切换电路 |
CN111193506A (zh) * | 2018-11-14 | 2020-05-22 | 珠海格力电器股份有限公司 | 一种带电压隔离的低功耗pmos管衬底切换电路 |
CN112331245A (zh) * | 2020-11-05 | 2021-02-05 | 湘潭大学 | 适用于非易失性存储器的电压选择电路 |
CN113489477A (zh) * | 2021-07-02 | 2021-10-08 | 山东汉旗科技有限公司 | 新型的pmos管衬底切换电路控制方法及系统 |
CN115664402A (zh) * | 2022-12-09 | 2023-01-31 | 南京模砾半导体有限责任公司 | 一种超低功耗高速动态锁存比较器 |
CN116954297A (zh) * | 2023-09-19 | 2023-10-27 | 深圳市思远半导体有限公司 | 一种电源选择电路和电源 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070057688A1 (en) * | 2005-08-31 | 2007-03-15 | Stmicroelectronics Crolles 2 Sas | Compensation for electric drifts of mos transistors |
US7504876B1 (en) * | 2006-06-28 | 2009-03-17 | Cypress Semiconductor Corporation | Substrate bias feedback scheme to reduce chip leakage power |
CN102611428A (zh) * | 2011-01-24 | 2012-07-25 | 上海华虹集成电路有限责任公司 | 电源电压选择电路 |
-
2014
- 2014-07-09 CN CN201410325012.1A patent/CN104133515B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070057688A1 (en) * | 2005-08-31 | 2007-03-15 | Stmicroelectronics Crolles 2 Sas | Compensation for electric drifts of mos transistors |
US7504876B1 (en) * | 2006-06-28 | 2009-03-17 | Cypress Semiconductor Corporation | Substrate bias feedback scheme to reduce chip leakage power |
CN102611428A (zh) * | 2011-01-24 | 2012-07-25 | 上海华虹集成电路有限责任公司 | 电源电压选择电路 |
Non-Patent Citations (2)
Title |
---|
付军辉等: "一种高转换速率衬底电位选择电路的设计", 《中国集成电路》, no. 115, 31 December 2008 (2008-12-31) * |
陈阳光等: "一种基于电荷泵的衬底电位选择器设计", 《桂林电子科技大学学报》, vol. 33, no. 4, 31 August 2013 (2013-08-31), pages 272 - 274 * |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104767518A (zh) * | 2015-04-20 | 2015-07-08 | 成都岷创科技有限公司 | 基于cmos的衬底转换电路 |
CN105915056A (zh) * | 2016-05-30 | 2016-08-31 | 武汉新芯集成电路制造有限公司 | 一种防止倒灌电流的升压电路 |
CN106026638A (zh) * | 2016-07-15 | 2016-10-12 | 成都信息工程大学 | 多模式开关电容电路 |
CN106026638B (zh) * | 2016-07-15 | 2018-10-09 | 成都信息工程大学 | 多模式开关电容电路 |
CN106300637A (zh) * | 2016-08-30 | 2017-01-04 | 杭州旗捷科技有限公司 | 芯片供电电路、芯片、墨盒 |
CN106300637B (zh) * | 2016-08-30 | 2019-03-08 | 杭州旗捷科技有限公司 | 芯片供电电路、芯片、墨盒 |
CN111193506A (zh) * | 2018-11-14 | 2020-05-22 | 珠海格力电器股份有限公司 | 一种带电压隔离的低功耗pmos管衬底切换电路 |
CN111193506B (zh) * | 2018-11-14 | 2021-08-31 | 珠海格力电器股份有限公司 | 一种带电压隔离的低功耗pmos管衬底切换电路 |
CN110045779A (zh) * | 2019-03-27 | 2019-07-23 | 华中科技大学 | 一种电压选择电路及方法 |
CN110518687A (zh) * | 2019-08-06 | 2019-11-29 | 成都锐成芯微科技股份有限公司 | 一种电源自动切换电路 |
CN110518687B (zh) * | 2019-08-06 | 2023-05-30 | 成都锐成芯微科技股份有限公司 | 一种电源自动切换电路 |
CN112331245A (zh) * | 2020-11-05 | 2021-02-05 | 湘潭大学 | 适用于非易失性存储器的电压选择电路 |
CN113489477A (zh) * | 2021-07-02 | 2021-10-08 | 山东汉旗科技有限公司 | 新型的pmos管衬底切换电路控制方法及系统 |
CN113489477B (zh) * | 2021-07-02 | 2024-04-02 | 山东汉旗科技有限公司 | 新型的pmos管衬底切换电路控制方法及系统 |
CN115664402A (zh) * | 2022-12-09 | 2023-01-31 | 南京模砾半导体有限责任公司 | 一种超低功耗高速动态锁存比较器 |
CN116954297A (zh) * | 2023-09-19 | 2023-10-27 | 深圳市思远半导体有限公司 | 一种电源选择电路和电源 |
CN116954297B (zh) * | 2023-09-19 | 2023-12-15 | 深圳市思远半导体有限公司 | 一种电源选择电路和电源 |
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CN104133515B (zh) | 2016-06-15 |
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Inventor after: Liu Linggang Inventor after: Liu Benqiang Inventor before: Liu Yin |
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Effective date of registration: 20160518 Address after: Kodak 277000 Shandong city in Zaozhuang Province Economic Development Zone West Yicheng Applicant after: SHANDONG HANTURE TECHNOLOGY CO.,LTD. Address before: 610213 Sichuan city of Chengdu province Huayang Washington Avenue section of No. 898 South Road, building 2 mu and 2-303 Applicant before: Liu Yin |
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Denomination of invention: PMOS transistor substrate selection circuit Effective date of registration: 20170904 Granted publication date: 20160615 Pledgee: Agricultural Bank of China Limited by Share Ltd. Zaozhuang branch Pledgor: SHANDONG HANTURE TECHNOLOGY CO.,LTD. Registration number: 2017370000132 |
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Denomination of invention: PMOS transistor substrate selection circuit Effective date of registration: 20220413 Granted publication date: 20160615 Pledgee: Zaozhuang rural commercial bank Limited by Share Ltd. Yicheng sub branch Pledgor: SHANDONG HANTURE TECHNOLOGY CO.,LTD. Registration number: Y2022980004195 |
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