CN104115291A - 改进的发光设备和方法 - Google Patents
改进的发光设备和方法 Download PDFInfo
- Publication number
- CN104115291A CN104115291A CN201380009124.XA CN201380009124A CN104115291A CN 104115291 A CN104115291 A CN 104115291A CN 201380009124 A CN201380009124 A CN 201380009124A CN 104115291 A CN104115291 A CN 104115291A
- Authority
- CN
- China
- Prior art keywords
- led
- filler rod
- led25
- base station
- string
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 85
- 239000000463 material Substances 0.000 claims abstract description 267
- 239000000945 filler Substances 0.000 claims description 83
- 238000012856 packing Methods 0.000 claims description 61
- 229910000679 solder Inorganic materials 0.000 claims description 57
- 238000012423 maintenance Methods 0.000 claims description 37
- 230000007547 defect Effects 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 17
- 229920001296 polysiloxane Polymers 0.000 claims description 16
- 239000000565 sealant Substances 0.000 claims description 13
- 238000009826 distribution Methods 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 229910000838 Al alloy Inorganic materials 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- 238000002310 reflectometry Methods 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004590 silicone sealant Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 238000011049 filling Methods 0.000 abstract description 4
- 238000003466 welding Methods 0.000 description 82
- 239000010410 layer Substances 0.000 description 81
- 229910052751 metal Inorganic materials 0.000 description 37
- 239000002184 metal Substances 0.000 description 37
- 239000000758 substrate Substances 0.000 description 37
- 239000012790 adhesive layer Substances 0.000 description 28
- 230000004907 flux Effects 0.000 description 24
- 230000008018 melting Effects 0.000 description 16
- 238000002844 melting Methods 0.000 description 16
- 230000014509 gene expression Effects 0.000 description 15
- 238000012360 testing method Methods 0.000 description 14
- 239000003822 epoxy resin Substances 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 238000013461 design Methods 0.000 description 9
- 230000006835 compression Effects 0.000 description 8
- 238000007906 compression Methods 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 230000005496 eutectics Effects 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 239000003086 colorant Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000009434 installation Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000001652 electrophoretic deposition Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- 229910002012 Aerosil® Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000008447 perception Effects 0.000 description 2
- 239000002574 poison Substances 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000012812 sealant material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261598171P | 2012-02-13 | 2012-02-13 | |
| US61/598,171 | 2012-02-13 | ||
| US13/435,912 US8575639B2 (en) | 2011-02-16 | 2012-03-30 | Light emitting devices for light emitting diodes (LEDs) |
| US13/435,912 | 2012-03-30 | ||
| PCT/US2013/025307 WO2013122831A1 (fr) | 2012-02-13 | 2013-02-08 | Dispositifs et procédés électroluminescents améliorés |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104115291A true CN104115291A (zh) | 2014-10-22 |
Family
ID=48984612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380009124.XA Pending CN104115291A (zh) | 2012-02-13 | 2013-02-08 | 改进的发光设备和方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104115291A (fr) |
| WO (1) | WO2013122831A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017063429A1 (fr) * | 2015-10-14 | 2017-04-20 | 京东方科技集团股份有限公司 | Élément plastique d'étanchéité de cadre, panneau d'affichage et dispositif d'affichage |
| CN111213236A (zh) * | 2017-08-18 | 2020-05-29 | 科锐公司 | 发光二极管、部件和相关方法 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD721339S1 (en) | 2010-12-03 | 2015-01-20 | Cree, Inc. | Light emitter device |
| US8564000B2 (en) | 2010-11-22 | 2013-10-22 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
| US8575639B2 (en) | 2011-02-16 | 2013-11-05 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
| US9490235B2 (en) | 2010-11-22 | 2016-11-08 | Cree, Inc. | Light emitting devices, systems, and methods |
| US9000470B2 (en) | 2010-11-22 | 2015-04-07 | Cree, Inc. | Light emitter devices |
| US8624271B2 (en) | 2010-11-22 | 2014-01-07 | Cree, Inc. | Light emitting devices |
| US9300062B2 (en) | 2010-11-22 | 2016-03-29 | Cree, Inc. | Attachment devices and methods for light emitting devices |
| US8455908B2 (en) | 2011-02-16 | 2013-06-04 | Cree, Inc. | Light emitting devices |
| USD702653S1 (en) | 2011-10-26 | 2014-04-15 | Cree, Inc. | Light emitting device component |
| US8729589B2 (en) | 2011-02-16 | 2014-05-20 | Cree, Inc. | High voltage array light emitting diode (LED) devices and fixtures |
| US9735198B2 (en) | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
| US10134961B2 (en) | 2012-03-30 | 2018-11-20 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
| USD740453S1 (en) | 2013-06-27 | 2015-10-06 | Cree, Inc. | Light emitter unit |
| USD739565S1 (en) | 2013-06-27 | 2015-09-22 | Cree, Inc. | Light emitter unit |
| DE102013218268A1 (de) * | 2013-09-12 | 2015-03-26 | Osram Gmbh | Träger und Leuchtvorrichtung |
| JP6515716B2 (ja) | 2014-07-18 | 2019-05-22 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
| USD823492S1 (en) | 2016-10-04 | 2018-07-17 | Cree, Inc. | Light emitting device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060147746A1 (en) * | 2004-12-03 | 2006-07-06 | Ngk Spark Plug Co., Ltd. | Ceramic substrate, ceramic package for housing light emitting element |
| JP2007266357A (ja) * | 2006-03-29 | 2007-10-11 | Kyocera Corp | 発光装置および照明装置 |
| US20080089072A1 (en) * | 2006-10-11 | 2008-04-17 | Alti-Electronics Co., Ltd. | High Power Light Emitting Diode Package |
| CN101364629A (zh) * | 2007-08-07 | 2009-02-11 | 斯坦雷电气株式会社 | 半导体发光装置 |
| US20100193822A1 (en) * | 2009-01-30 | 2010-08-05 | Nichia Corporation | Light emitting semiconductor device and method of manufacture thereof |
| US20110068674A1 (en) * | 2009-09-24 | 2011-03-24 | Toshiba Lighting & Technology Corporation | Light-emitting device and illumination device |
-
2013
- 2013-02-08 WO PCT/US2013/025307 patent/WO2013122831A1/fr active Application Filing
- 2013-02-08 CN CN201380009124.XA patent/CN104115291A/zh active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060147746A1 (en) * | 2004-12-03 | 2006-07-06 | Ngk Spark Plug Co., Ltd. | Ceramic substrate, ceramic package for housing light emitting element |
| JP2007266357A (ja) * | 2006-03-29 | 2007-10-11 | Kyocera Corp | 発光装置および照明装置 |
| US20080089072A1 (en) * | 2006-10-11 | 2008-04-17 | Alti-Electronics Co., Ltd. | High Power Light Emitting Diode Package |
| CN101364629A (zh) * | 2007-08-07 | 2009-02-11 | 斯坦雷电气株式会社 | 半导体发光装置 |
| US20100193822A1 (en) * | 2009-01-30 | 2010-08-05 | Nichia Corporation | Light emitting semiconductor device and method of manufacture thereof |
| US20110068674A1 (en) * | 2009-09-24 | 2011-03-24 | Toshiba Lighting & Technology Corporation | Light-emitting device and illumination device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017063429A1 (fr) * | 2015-10-14 | 2017-04-20 | 京东方科技集团股份有限公司 | Élément plastique d'étanchéité de cadre, panneau d'affichage et dispositif d'affichage |
| US10141538B2 (en) | 2015-10-14 | 2018-11-27 | Boe Technology Group Co., Ltd. | Sealant, display panel and display device |
| CN111213236A (zh) * | 2017-08-18 | 2020-05-29 | 科锐公司 | 发光二极管、部件和相关方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013122831A1 (fr) | 2013-08-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104115291A (zh) | 改进的发光设备和方法 | |
| US8994057B2 (en) | Light emitting devices for light emitting diodes (LEDS) | |
| CN103270614B (zh) | 发光器件和方法 | |
| CN104956500B (zh) | 无次基台的发光二极管（led）部件及其制作方法 | |
| CN103329290B (zh) | 发光器件和方法 | |
| US9261246B2 (en) | Light-emitting module, light source device, liquid crystal display device, and method of manufacturing light-emitting module | |
| JP4598767B2 (ja) | 半導体発光装置、発光モジュール、および照明装置 | |
| EP1908124B1 (fr) | Module electroluminescent et sa carte de circuit | |
| CN102456820B (zh) | 用于安装发光元件的基板、发光器件及其制造方法 | |
| CN103022024A (zh) | 固态照明部件 | |
| CN102386307A (zh) | 具有对比面的led封装 | |
| CN105103313A (zh) | 发光元件封装 | |
| CN103502727A (zh) | 使用发光器件的远程部件装置、系统和方法 | |
| CN102478172A (zh) | 照明装置 | |
| CN104969368B (zh) | 基于基板的表面贴装器件(smd)发光组件以及方法 | |
| CN102456782A (zh) | 发光器件 | |
| JP4263905B2 (ja) | Ｌｅｄ光源、ｌｅｄ照明装置、およびｌｅｄ表示装置 | |
| US20090108267A1 (en) | Composite light-emitting-diode packaging structure | |
| CN203826385U (zh) | 固态发射器面板 | |
| US11933459B2 (en) | Lamp including reduced phosphor light emitting diode filaments | |
| CN202111155U (zh) | Led封装 | |
| US20230134502A1 (en) | Light emitting diode filament including flip chip light emitting diodes to reduce the amount of phosphor that is integrated into the filament | |
| CN219435896U (zh) | 一种led球泡照明芯片结构 | |
| JP2019091648A (ja) | 調色ｌｅｄ照明装置および照明器具 | |
| US20230137752A1 (en) | Light emitting diode filament including chip scale package light emitting diodes to reduce the amount of phosphor that is integrated into the filament |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141022 |
|
| WD01 | Invention patent application deemed withdrawn after publication |