CN104109886A - Microvia-superfilling copper plating technology - Google Patents
Microvia-superfilling copper plating technology Download PDFInfo
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- CN104109886A CN104109886A CN201310139989.XA CN201310139989A CN104109886A CN 104109886 A CN104109886 A CN 104109886A CN 201310139989 A CN201310139989 A CN 201310139989A CN 104109886 A CN104109886 A CN 104109886A
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- blind hole
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Abstract
The invention discloses a microvia-superfilling copper plating technology. The microvia-superfilling copper plating technology comprises the following steps of a, carrying out activation treatment on a blind hole plate to be plated in a dilute sulphuric acid solution for 1-10min, carrying out water washing and drying, vertically fixing the blind hole plate to be plated to the middle of a Hull cell having the volume of 1500mL, and putting phosphor-containing copper plates as anodes having phosphor content of 0.04-0.065% at two ends of the cell, b, preparing a plating solution, c, switching on a power supply, carrying out electroplating at current density of 0.5-2ASD for 5-30min, increasing current density to 0.5-4ASD, carrying out electroplating for 10-20min, wherein the whole electroplating process is finished in a static state, then switching off the power supply, taking out the blind hole plate as a cathode, flushing the blind hole plate by distilled water, and blow-drying the blind hole plate by cold air to obtain a sample. Under the condition of absolutely no forced convection of the plating solution, the microvia-superfilling copper plating technology does not increase surface copper thickness and guarantees a high microvia-filling rate of the blind hole device.
Description
Technical field
The present invention relates to PCB electroplating technology field, relate to more specifically a kind of extra-fill hole plating copper technique.
Background technology
Electroplating blind hole technology is to realize the effective means of semi-conductor high density interconnect, promotes especially the electronic product wuwa of miniaturization increasingly.In recent years, along with improving constantly of market demands, pcb board is electroplated blind hole technology also constantly development is perfect, is in particular in the following aspects: the first, the phosphorus-copper anode of solubility gradually by inert anode coordinate cupric oxide powder add replace; The second, vertical electroplating technology constantly update perfect in, horizontal electroplating technology also obtains tremendous development, in addition, pulsed technique is applied to electroplate process for filling hole and is also brought into schedule; The 3rd, aspect the filling perforation formula as plating blind hole technology " software ", various novel additives and additive combination are developed research, and are successfully applied to actual production.
With regard to current market situation, because horizontal electroplating assembly line cost is higher, pulse plating technology is also difficult to large-scale application at short notice in industrial production, therefore the method that, adopts direct supply to coordinate vertical electroplating technology to electroplate blind hole still can occupy most domestic market within the longer from now on time.When blind hole plate is electroplated on vertical plating production line, in order to increase the exchange efficiency of plating solution in blind hole, except making negative electrode plate up-down vibration to be plated by mechanical force or swinging, toward contact anticathode plate, apply inflate, the operation such as side spray or jet, improve filling perforation effect.Although these operations can improve the filling perforation rate of blind hole to a certain extent, reducing groove presses, but the optional equipment increasing has improved the production cost of upright plating line greatly, and be also inevitable because the ununiformity of side spray or jet causes the filling perforation rate of blind hole of different zones on negative plate inhomogeneous.
Summary of the invention
Object of the present invention is exactly provide in order to solve the deficiency of prior art a kind of in the situation that not increasing face copper thickness, guarantee that blind hole has higher filling perforation rate, the effect of filling perforation simultaneously is not subject to the impact of plating solution forced convection, to reduce optional equipment and the operation on vertical plating production line, the extra-fill hole plating copper technique reducing production costs.
The present invention adopts following technical solution to realize above-mentioned purpose: a kind of extra-fill hole plating copper technique, it is characterized in that, and it comprises the steps:
A, by blind hole plate to be plated (blind hole diameter 150 μ m, hole depth 75 μ m) activation treatment 1-10 min in dilution heat of sulfuric acid, after washing, cold wind dry up, plate to be plated is vertically fixed on to the mid-way of 1500 mL Hull grooves (trench bottom have inflate hole), it is that the phosphorus copper plate of 0.04-0.065 % is anode that phosphorus content is placed at groove two ends;
B, preparation plating solution, basal liquid is by the CuSO of 100-250 g/L
45H
2the H of O, 40-150 g/L
2sO
4cl with 10-200 ppm
-ion forms, in the situation that constantly stirring, in basal liquid, sequentially add the inhibitor of 5-50 mL, the accelerator of 1-10 mL, and the leveling agent of 0.5-5 mL, then adding deionized water constant volume is 1500 mL, after mixing, slowly injects Hull groove, standing 1-20 min, makes the fully wetting blind hole of plating solution;
C, energising start to electroplate, first under the current density of 0.5-2 ASD, electroplate 5-30 min, then current density is increased to 0.5-4 ASD, continue to electroplate 10-120 min, whole electroplating process completes under static (without forced convection), up to, power-off, takes out negative electrode blind hole plate, with distilled water flushing, after cold wind dries up, obtain sample.
As further illustrating of such scheme, preferably, the soak time in described step a is 1 min.
Inhibitor in described step b is that molecular weight is 6000 polyoxyethylene glycol (PEG6000).
Inhibitor in described step b is a kind of polyoxyethylene-poly-oxypropylene polyoxyethylene three block block polymers, and molecular weight is 2900(EPE2900).
Accelerator in described step b is sodium polydithio-dipropyl sulfonate (SPS).
Accelerator in described step b is phenyl dithiopropane sodium sulfonate (BSP).
Inhibitor in described step b is thiazolidine thioketones (H1).
Leveling agent in described step b is strong that green (JGB).
Leveling agent in described step b is the mixture of ethylene thiourea (N) and 2-mercaptobenzimidazole (M).
Electroplating process in described step c is to have forced convection, and complete in the situation of lasting air-blowing.
The beneficial effect that the present invention adopts above-mentioned technical solution to reach is:
The present invention be take a kind of block polyether as inhibitor, coordinate preferred accelerator and leveling agent, at plating solution without forced convection, in the situation of side spray or jet, still can guarantee higher filling perforation rate and suitable face copper thickness, this work simplification the equipment configuration of vertical plating production line, saved power consumption, reduced production cost.
Accompanying drawing explanation
Fig. 1 (a) is the section metaloscope picture of the plating blind hole that obtained by embodiment 15;
Fig. 1 (b) is the section metaloscope picture of the plating blind hole that obtained by embodiment 16;
Fig. 1 (c) is the section metaloscope picture of the plating blind hole that obtained by embodiment 17;
Fig. 1 (d) is the section metaloscope picture of the plating blind hole that obtained by embodiment 18.
Embodiment
Below in conjunction with specific embodiment, technical scheme of the present invention is described in further detail.
Embodiment 1
Extra-fill hole plating copper processing step of the present invention comprises:
One, first by blind hole plate to be plated (blind hole diameter 150 μ m, hole depth 75 μ m) activation treatment 1-10 min in dilution heat of sulfuric acid, after washing, cold wind dry up, plate to be plated is vertically fixed on to the mid-way of 1500 mL Hull grooves (trench bottom have inflate hole), it is that the phosphorus copper plate of 0.04-0.065 % is anode that phosphorus content is placed at groove two ends;
Two, preparation plating solution, basal liquid is by the CuSO of 100-230 g/L
45H
2the H of O, 40-150 g/L
2sO
4cl with 10-200 ppm
-ion forms, in the situation that constantly stirring, in basal liquid, sequentially add the inhibitor of 5-50 mL, the accelerator of 1-10 mL, and the leveling agent of 0.5-5 mL, then adding deionized water constant volume is 1500 mL, after mixing, slowly injects Hull groove, standing 1-20 min, makes the fully wetting blind hole of plating solution;
Three, energising starts to electroplate, first under the current density of 0.5-2 ASD, electroplate 5-30 min, then current density is increased to 0.5-4 ASD, continue to electroplate 10-120 min, whole electroplating process completes under static (without forced convection), up to, power-off, takes out negative electrode blind hole plate, uses a large amount of distilled water flushings, after cold wind dries up, obtain sample.
In present embodiment, additive is the concentrated solution having prepared before experiment.
In present embodiment, adopt first little rear large two kinds of different current densities to be electroplate with the filling perforation rate that improves that is beneficial to.
Embodiment 2
Present embodiment is different from embodiment one is that activation treatment time in step 1 is 1 min.Other step and parameter are identical with embodiment one.
Embodiment 3
Present embodiment and above-described embodiment different are that basal liquid in step 2 is by the CuSO of 100-200 g/L
45H
2the H of O, 100-150 g/L
2sO
4cl with 50-100 ppm
-ion forms.Other step and parameter are identical with embodiment one or two.
Embodiment 4
Present embodiment is different from embodiment three is that basal liquid in step 2 is by the CuSO of 180-250 g/L
45H
2the H of O, 40-80 g/L
2sO
4cl with 10-60 ppm
-ion forms.Other step and parameter are identical with embodiment three.
Embodiment 5
Present embodiment is different from embodiment one to four is that inhibitor in step 2 is PEG6000.Other step and parameter are identical with embodiment one to four.
Embodiment 6
Present embodiment is different from embodiment five is that inhibitor in step 2 is EPE2900.Other step and parameter are identical with embodiment five.
Embodiment 7
Present embodiment is different from embodiment one to six is that accelerator in step 2 is SPS.Other step and parameter are identical with embodiment one to six.
Embodiment 8
Present embodiment is different from embodiment seven is that accelerator in step 2 is BSP.Other step and parameter are identical with embodiment seven.
Embodiment 9
Present embodiment is different from embodiment one to eight is that inhibition in step 2 is H1.Other step and parameter are identical with embodiment one to eight.
Embodiment 10
Present embodiment is different from embodiment nine is that inhibition in step 2 is JGB.Other step and parameter are identical with embodiment nine.
Embodiment 11
Present embodiment is different from embodiment ten is that inhibition in step 2 is the mixture of N and M.Other step and parameter are identical with embodiment ten.
Embodiment 12
What present embodiment was different from embodiment one to 11 is first under the current density of 0.5-1 ASD, to electroplate 15-30 min in step 3, then current density is increased to 1-4 ASD, continues to electroplate 30-90 min.Other step and parameter are identical with embodiment one to 11.
Embodiment 13
What present embodiment was different from embodiment 12 is first under the current density of 1-2 ASD, to electroplate 10-30 min in step 3, then current density is increased to 1-3 ASD, continues to electroplate 60-120 min.Other step and parameter are identical with embodiment 12.
Embodiment 14
Present embodiment is different from embodiment one to 13 is that electroplating process in step 3 is to complete in forced convection (continuing air-blowing) in the situation that.Other step and parameter are identical with embodiment one to 13.In present embodiment, adopting the method preparation plating filling perforation sample of forced convection is in order to contrast with the filling perforation sample of preparing under complete static state.
Embodiment 15
In present embodiment, the flow process of extra-fill hole plating copper technique is:
One, first by blind hole plate to be plated (blind hole diameter 150 μ m, hole depth 75 μ m) activation treatment 1 min in dilution heat of sulfuric acid, after washing, cold wind dry up, plate to be plated is vertically fixed on to the mid-way of 1500 mL Hull grooves (trench bottom have inflate hole), it is that the phosphorus copper plate of 0.04-0.065 % is anode that phosphorus content is placed at groove two ends;
Two, preparation plating solution, basal liquid is by the CuSO of 220 g/L
45H
2the H of O, 55 g/L
2sO
4cl with 60 ppm
-ion forms, in the situation that constantly stirring, in basal liquid, sequentially add the PEG of 5-50 mL, the SPS of 1-10 mL, and the JGB of 0.5-5 mL, then adding deionized water constant volume is 1500 mL, after mixing, slowly injects Hull groove, standing 5 min, make the fully wetting blind hole of plating solution;
Three, energising starts to electroplate, first under the current density of 1 ASD, electroplate 30 min, then current density is increased to 2 ASD, continue to electroplate 90 min, whole electroplating process completed in forced convection (continuing air-blowing) in the situation that, up to, power-off, takes out negative electrode blind hole plate, uses a large amount of distilled water flushings, after cold wind dries up, obtain sample.
The blind hole section Metallograph of plating filling perforation sample prepared by employing present embodiment is as shown in Fig. 1 (a), and face copper thickness is 28 μ m.
Embodiment 16
In present embodiment, the flow process of extra-fill hole plating copper technique is:
One, first by blind hole plate to be plated (blind hole diameter 150 μ m, hole depth 75 μ m) activation treatment 1 min in dilution heat of sulfuric acid, after washing, cold wind dry up, plate to be plated is vertically fixed on to the mid-way of 1500 mL Hull grooves (trench bottom have inflate hole), it is that the phosphorus copper plate of 0.04-0.065 % is anode that phosphorus content is placed at groove two ends;
Two, preparation plating solution, basal liquid is by the CuSO of 220 g/L
45H
2the H of O, 55 g/L
2sO
4cl with 60 ppm
-ion forms, in the situation that constantly stirring, in basal liquid, sequentially add the PEG of 5-50 mL, the SPS of 1-10 mL, and the JGB of 0.5-5 mL, then adding deionized water constant volume is 1500 mL, after mixing, slowly injects Hull groove, standing 5 min, make the fully wetting blind hole of plating solution;
Three, energising starts to electroplate, first under the current density of 1 ASD, electroplate 30 min, then current density is increased to 2 ASD, continue to electroplate 90 min, whole electroplating process completes under static (without forced convection), up to, power-off, takes out negative electrode blind hole plate, uses a large amount of distilled water flushings, after cold wind dries up, obtain sample.
The blind hole section Metallograph of plating filling perforation sample prepared by employing present embodiment is as shown in Fig. 1 (b), and face copper thickness is 31 μ m.
Embodiment 17
In present embodiment, the flow process of extra-fill hole plating copper technique is:
One, first by blind hole plate to be plated (blind hole diameter 150 μ m, hole depth 75 μ m) activation treatment 1 min in dilution heat of sulfuric acid, after washing, cold wind dry up, plate to be plated is vertically fixed on to the mid-way of 1500 mL Hull grooves (trench bottom have inflate hole), it is that the phosphorus copper plate of 0.04-0.065 % is anode that phosphorus content is placed at groove two ends; Two, preparation plating solution, basal liquid is by the CuSO of 220 g/L
45H
2the H of O, 55 g/L
2sO
4form with the Cl-ion of 60 ppm, in the situation that constantly stirring, in basal liquid, sequentially add the EPE2900 of 5-50 mL, the SPS of 1-10 mL, and the JGB of 0.5-5 mL, then adding deionized water constant volume is 1500 mL, after mixing, slowly injects Hull groove, standing 5 min, make the fully wetting blind hole of plating solution;
Three, energising starts to electroplate, first under the current density of 1 ASD, electroplate 30 min, then current density is increased to 2 ASD, continue to electroplate 90 min, whole electroplating process completed in forced convection (continuing air-blowing) in the situation that, up to, power-off, takes out negative electrode blind hole plate, uses a large amount of distilled water flushings, after cold wind dries up, obtain sample.
The blind hole section Metallograph of plating filling perforation sample prepared by employing present embodiment is as shown in Fig. 1 (c), and face copper thickness is 28 μ m.
Embodiment 18
In present embodiment, the flow process of extra-fill hole plating copper technique is:
One, first by blind hole plate to be plated (blind hole diameter 150 μ m, hole depth 75 μ m) activation treatment 1 min in dilution heat of sulfuric acid, after washing, cold wind dry up, plate to be plated is vertically fixed on to the mid-way of 1500 mL Hull grooves (trench bottom have inflate hole), it is that the phosphorus copper plate of 0.04-0.065 % is anode that phosphorus content is placed at groove two ends;
Two, preparation plating solution, basal liquid is by the CuSO of 220 g/L
45H
2the H of O, 55 g/L
2sO
4form with the Cl-ion of 60 ppm, in the situation that constantly stirring, in basal liquid, sequentially add the EPE2900 of 5-50 mL, the SPS of 1-10 mL, and the JGB of 0.5-5 mL, then adding deionized water constant volume is 1500 mL, after mixing, slowly injects Hull groove, standing 5 min, make the fully wetting blind hole of plating solution; Three, energising starts to electroplate, first under the current density of 1 ASD, electroplate 30 min, then current density is increased to 2 ASD, continue to electroplate 90 min, whole electroplating process completes under static (without forced convection), up to, power-off, takes out negative electrode blind hole plate, uses a large amount of distilled water flushings, after cold wind dries up, obtain sample.
The blind hole section Metallograph of plating filling perforation sample prepared by employing present embodiment is as shown in Fig. 1 (d), and face copper thickness is 28 μ m.
Above-described is only the preferred embodiment of the present invention, it should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise of the invention, can also make some distortion and improvement, and these all belong to protection scope of the present invention.
Claims (10)
1. an extra-fill hole plating copper technique, is characterized in that, it comprises the steps:
A, by blind hole plate to be plated activation treatment 1-10 min in dilution heat of sulfuric acid, after washing, drying up, plate to be plated is vertically fixed on to the mid-way of 1500 mL Hull grooves, it is that the phosphorus copper plate of 0.04-0.065 % is anode that phosphorus content is placed at groove two ends;
B, preparation plating solution, basal liquid is by the CuSO of 100-250 g/L
45H
2the H of O, 40-50 g/L
2sO
4cl with 10-200 ppm
-ion forms, in the situation that constantly stirring, in basal liquid, sequentially add the inhibitor of 5-50 mL, the accelerator of 1-10 mL, and the leveling agent of 0.5-5 mL, then adding deionized water constant volume is 1500 mL, after mixing, slowly injects Hull groove, standing 1-20 min, makes the fully wetting blind hole of plating solution;
C, energising start to electroplate, first under the current density of 0.5-2 ASD, electroplate 5-30 min, then current density is increased to 0.5-4 ASD, continue to electroplate 10-20 min, whole electroplating process completes under static state, up to, power-off, takes out negative electrode blind hole plate, with distilled water flushing, after cold wind dries up, obtain sample.
2. a kind of extra-fill hole plating copper technique according to claim 1, is characterized in that, the soak time in described step a is 1 min.
3. a kind of extra-fill hole plating copper technique according to claim 1, is characterized in that, the inhibitor in described step b is PEG6000.
4. a kind of extra-fill hole plating copper technique according to claim 1, is characterized in that, described inhibitor is EPE2900.
5. a kind of extra-fill hole plating copper technique according to claim 1, is characterized in that, the accelerator in described step b is SPS.
6. a kind of extra-fill hole plating copper technique according to claim 1, is characterized in that, the accelerator in described step b is BSP.
7. a kind of extra-fill hole plating copper technique according to claim 1, is characterized in that, the inhibitor in described step b is H
1.
8. a kind of extra-fill hole plating copper technique according to claim 1, is characterized in that, the leveling agent in described step b is JGB.
9. a kind of extra-fill hole plating copper technique according to claim 1, is characterized in that, the leveling agent in described step b is the mixture of N and M.
10. a kind of extra-fill hole plating copper technique according to claim 1, is characterized in that, the electroplating process in described step c is to have forced convection, and complete in the situation of lasting air-blowing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310139989.XA CN104109886A (en) | 2013-04-22 | 2013-04-22 | Microvia-superfilling copper plating technology |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310139989.XA CN104109886A (en) | 2013-04-22 | 2013-04-22 | Microvia-superfilling copper plating technology |
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| Publication Number | Publication Date |
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| CN104109886A true CN104109886A (en) | 2014-10-22 |
Family
ID=51706869
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| CN201310139989.XA Pending CN104109886A (en) | 2013-04-22 | 2013-04-22 | Microvia-superfilling copper plating technology |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105568326A (en) * | 2015-12-31 | 2016-05-11 | 深圳市鑫鸿顺科技有限公司 | Coppering solution special for vertical and continuous electroplating of PCB |
| WO2017070992A1 (en) * | 2015-10-28 | 2017-05-04 | 安捷利电子科技（苏州）有限公司 | Method for full filling inter-layer blind hole of hdi rigid-flex laminate with copper |
| CN107278058A (en) * | 2016-04-08 | 2017-10-20 | 东莞市斯坦得电子材料有限公司 | One kind is used for printed wiring board buried via hole, the copper-plated technique of blind hole filling perforation |
| CN107313085A (en) * | 2016-04-26 | 2017-11-03 | 中国科学院金属研究所 | The copper plating fill method of fine blind hole in a kind of high density circuit board |
| CN109267118A (en) * | 2018-11-28 | 2019-01-25 | 深圳市正天伟科技有限公司 | A kind of route board blind hole filling perforation electroplating additive and preparation method thereof |
| CN109972180A (en) * | 2019-04-12 | 2019-07-05 | 博敏电子股份有限公司 | The new application of 2,2 '-dithiodipyridine and the electro-plating method that filling perforation additive is electroplated and uses the additive for using it |
| CN110106536A (en) * | 2019-06-21 | 2019-08-09 | 郑州知淘信息科技有限责任公司 | A kind of printed circuit board blind hole fills out copper and fills out copper method with acid copper plating bath and its blind hole |
| CN110117801A (en) * | 2019-06-21 | 2019-08-13 | 郑州知淘信息科技有限责任公司 | A kind of printed circuit board blind hole fills out copper copper plating additive and preparation method thereof |
| CN110318079A (en) * | 2018-03-28 | 2019-10-11 | 东莞市斯坦得电子材料有限公司 | A kind of VCP copper-plating technique for flexible printed circuit board |
| CN112813470A (en) * | 2020-12-31 | 2021-05-18 | 南通赛可特电子有限公司 | PCB copper sulfate direct-current electroplating process |
| CN114517315A (en) * | 2022-03-03 | 2022-05-20 | 东莞市斯坦得电子材料有限公司 | Formula and preparation method of high-penetrability copper polishing agent |
| CN114775001A (en) * | 2022-04-26 | 2022-07-22 | 中国科学院深圳先进技术研究院 | Copper interconnection electroplating solution and copper interconnection electroplating method |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017070992A1 (en) * | 2015-10-28 | 2017-05-04 | 安捷利电子科技（苏州）有限公司 | Method for full filling inter-layer blind hole of hdi rigid-flex laminate with copper |
| CN105568326A (en) * | 2015-12-31 | 2016-05-11 | 深圳市鑫鸿顺科技有限公司 | Coppering solution special for vertical and continuous electroplating of PCB |
| CN107278058A (en) * | 2016-04-08 | 2017-10-20 | 东莞市斯坦得电子材料有限公司 | One kind is used for printed wiring board buried via hole, the copper-plated technique of blind hole filling perforation |
| CN107313085B (en) * | 2016-04-26 | 2019-10-22 | 中国科学院金属研究所 | The copper electroplating filling method of fine blind hole in a kind of high density circuit board |
| CN107313085A (en) * | 2016-04-26 | 2017-11-03 | 中国科学院金属研究所 | The copper plating fill method of fine blind hole in a kind of high density circuit board |
| CN110318079A (en) * | 2018-03-28 | 2019-10-11 | 东莞市斯坦得电子材料有限公司 | A kind of VCP copper-plating technique for flexible printed circuit board |
| CN109267118A (en) * | 2018-11-28 | 2019-01-25 | 深圳市正天伟科技有限公司 | A kind of route board blind hole filling perforation electroplating additive and preparation method thereof |
| CN109972180A (en) * | 2019-04-12 | 2019-07-05 | 博敏电子股份有限公司 | The new application of 2,2 '-dithiodipyridine and the electro-plating method that filling perforation additive is electroplated and uses the additive for using it |
| CN110106536A (en) * | 2019-06-21 | 2019-08-09 | 郑州知淘信息科技有限责任公司 | A kind of printed circuit board blind hole fills out copper and fills out copper method with acid copper plating bath and its blind hole |
| CN110117801A (en) * | 2019-06-21 | 2019-08-13 | 郑州知淘信息科技有限责任公司 | A kind of printed circuit board blind hole fills out copper copper plating additive and preparation method thereof |
| CN112813470A (en) * | 2020-12-31 | 2021-05-18 | 南通赛可特电子有限公司 | PCB copper sulfate direct-current electroplating process |
| CN114517315A (en) * | 2022-03-03 | 2022-05-20 | 东莞市斯坦得电子材料有限公司 | Formula and preparation method of high-penetrability copper polishing agent |
| CN114775001A (en) * | 2022-04-26 | 2022-07-22 | 中国科学院深圳先进技术研究院 | Copper interconnection electroplating solution and copper interconnection electroplating method |
| CN114775001B (en) * | 2022-04-26 | 2024-04-23 | 中国科学院深圳先进技术研究院 | Copper interconnection electroplating solution and copper interconnection electroplating method |
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Application publication date: 20141022 |
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