CN104109838A - ITO film and preparation method thereof - Google Patents
ITO film and preparation method thereof Download PDFInfo
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- CN104109838A CN104109838A CN201410317189.7A CN201410317189A CN104109838A CN 104109838 A CN104109838 A CN 104109838A CN 201410317189 A CN201410317189 A CN 201410317189A CN 104109838 A CN104109838 A CN 104109838A
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Abstract
The invention relates to an ITO film and a preparation method thereof. The preparation method of the ITO film comprises the following steps: providing a glass substrate, heating the substrate, maintaining the substrate at 220-310 DEG C in an atmosphere of an oxidizing gas and preparing the ITO film on the substrate, wherein the oxidizing gas is selected from one of N2, NO and NO2 or one of a mixed gas of Ar and N2, a mixed gas of Ar and NO and a mixed gas of Ar and NO2. The method has the beneficial effects that the oxidizing gas is adsorbed in an ITO film layer, thus reducing the number of carriers in the ITO film layer, reducing the gap resistance in the ITO film layer and avoiding changing the film layer resistance and the gap resistance as the ITO film layer adsorbs a reducing gas; the resistance of the ITO film layer is kept stable, thus solving the problem of resistance reduction, avoiding the problem that the resistance reduction amplitudes and positions do not have regularity and better controlling the resistance uniformity of the ITO film.
Description
Technical field
The present invention relates to coating technique field, particularly relate to a kind of preparation method and ito thin film of ito thin film.
Background technology
ITO (tin indium oxide) is N-shaped thin-film material, is at present at the most widely used transparent conductive material in the aspect such as flat pannel display, touch-control.No matter be LCD, resistive touch screen or capacitive touch screen, all adopt in a large number at present ITO as its nesa coating.
The ito thin film that resistive touch screen is used because of rete too thin, specific surface is larger, easily absorbing and reducing gas and cause producing after for some time its resistance 5%～15% left and right that naturally declines, but through clean, harsh after resistance go up again, after fitting into finished product, decline again, its resistance is wayward, causes very big hidden danger of quality to client's product.
In order to meet client's requirement, the way that at present mostly ITO plated film producer generally takes be while producing the ito thin film that resistive touch screen uses, resistance is done high, so that ITO product is when the customers' place, and after client's processing procedure, resistance falls back within the scope of customer demand value, thereby ensure that the linearity of client's finished product, impedance loop all, within the scope of customer demand, do not affect client's touch-control experience.But the amplitude that the resistance of ito thin film reduces and position are significantly not regular, therefore resistance homogeneity variation after resistance landing is prone to linear bad phenomenon, be also difficult to ensure the quality of product.
Summary of the invention
Based on this, be necessary the unmanageable problem of resistance homogeneity for above-mentioned resistive touch screen ito glass, provide a kind of preparation method of ito thin film, to control preferably the resistance homogeneity of ito thin film.
Further, provide a kind of ito thin film of being prepared by the preparation method of above-mentioned ito thin film.
A preparation method for ito thin film, comprises the steps:
Glass substrate is provided, described substrate is heated, and described substrate is maintained to 220～310 DEG C;
In oxidizing gas atmosphere, on described substrate, prepare ito thin film, wherein, described oxidizing gas is selected from N
2, NO and NO
2in one, or be selected from Ar and N
2gas mixture and Ar and the NO of mixed gas, Ar and NO
2gas mixture in one.
In an embodiment, the described step of preparing ito thin film on described substrate is to adopt magnetron sputtering to prepare ito thin film on described substrate therein.
Therein in an embodiment, described in substrate is provided, described substrate is heated, and described substrate is maintained to the step of 220～310 DEG C is that described substrate is maintained to 250～280 DEG C.
Therein in an embodiment, described Ar and N
2mixed gas in, Ar and N
2volume ratio be 95:5,90:10,85:15 or 80:20; In the gas mixture of described Ar and NO, the volume ratio of Ar and NO is 95:5,90:10,85:15 or 80:20; Described Ar and NO
2gas mixture in, Ar and NO
2volume ratio be 95:5,90:10,85:15 or 80:20.
Therein in an embodiment, described N
2, NO and NO
2flow be 0.1～6sccm, described Ar and N
2gas mixture and Ar and the NO of mixed gas, Ar and NO
2the flow of gas mixture be 0.5～50sccm.
A kind of ito thin film of being prepared by the preparation method of above-mentioned ito thin film.
The preparation method of above-mentioned ito thin film is under the underlayer temperature of 220～310 DEG C, in oxidizing gas atmosphere, prepare ito thin film, under the underlayer temperature of 220～310 DEG C, oxidizing gas is adsorbed onto in ITO rete, combine with In and Sn atom, become a part for ITO rete crystal, reduce the quantity of the current carrier in ITO rete, reduce the gas resistance in ITO rete, avoid ITO rete to change rete resistance and gas resistance because of absorbing and reducing gas, it is stable that its resistance can keep, thereby avoid amplitude and position that resistance reduces there is no significantly regular problem, control preferably the resistance homogeneity of ito thin film.
Brief description of the drawings
Fig. 1 is the preparation method's of the ito thin film of an embodiment schema.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.A lot of details are set forth in the following description so that fully understand the present invention.But the present invention can implement to be much different from alternate manner described here, and those skilled in the art can do similar improvement without prejudice to intension of the present invention in the situation that, and therefore the present invention is not subject to the restriction of following public concrete enforcement.
Refer to Fig. 1, the preparation method of the ito thin film of an embodiment, comprises the steps S110 and step S120.
Step S110: substrate is provided, substrate is heated, and substrate is maintained to 220～310 DEG C.
Substrate is selected as required.In the time that ito thin film is applied to LCD, resistive touch screen or capacitive touch screen by needs, substrate is generally glass substrate.
First glass substrate is cleaned, and after dry, substrate is heated, and substrate is maintained until to 220～310 DEG C.
There is material impact in the resistance control of the ito thin film of substrate temperature to follow-up generation.In the time that underlayer temperature is too high, affect the effect of improving of N atom pairs resistance decline; In the time that substrate temperature is too low, cannot open N ≡ N, N=O key, be difficult to realize the effect of improving resistance decline.Preferably, substrate temperature maintains 250～280 DEG C.
Step S120: in oxidizing gas atmosphere, prepare ito thin film on substrate, wherein, oxidizing gas is selected from N
2, NO and NO
2in one, or be selected from Ar and N
2gas mixture and Ar and the NO of mixed gas, Ar and NO
2gas mixture in one.
Can adopt magnetron sputtering on substrate, to prepare ito thin film.In oxidizing gas atmosphere, prepare ito thin film, oxidizing gas is adsorbed onto in ITO rete, the problem of utilizing oxidizing gas to improve or avoid rete resistance to decline.
N
2, NO and NO
2this three kinds of oxidizing gas and Ar and N
2gas mixture or Ar and the NO of mixed gas, Ar and NO
2these three kinds of oxidisability mixed gass of gas mixture can combine with In and Sn atom in ito thin film, reduced the quantity of the current carrier in ITO rete, reduce the gas resistance in ITO rete.And can not there is not other chemical reactions with ITO in this gas, can not affect the performance of ito thin film itself, thereby can ensure the quality of ito thin film.
Preferably, Ar and N
2mixed gas in, Ar and N
2volume ratio be 95:5,90:10,85:15 or 80:20; In the gas mixture of Ar and NO, the volume ratio of Ar and NO is 95:5,90:10,85:15 or 80:20; Ar and NO
2gas mixture in, Ar and NO
2volume ratio be 95:5,90:10,85:15 or 80:20.
The flow of oxidizing gas is too low, is difficult to reach the effect that reduces ito thin film resistance; And the flow of oxidizing gas is too high, can makes ito thin film be difficult to etching, thereby bring difficulty to follow-up processing, and make the transmitance of ito thin film too low and be difficult to meet and use needs.Therefore, preferably, N
2, NO and NO
2flow be 0.1～6sccm, Ar and N
2gas mixture and Ar and the NO of mixed gas, Ar and NO
2the flow of gas mixture be 0.5～50sccm.
Be appreciated that except preparing ito thin film, sputtering chamber also passes into process gas, as Ar in the time adopting magnetron sputtering to prepare ito thin film in above-mentioned oxidizing gas atmosphere.Above-mentioned oxidizing gas is as reactant gases, different from the effect of process gas.
The preparation method of above-mentioned ito thin film is in oxidizing gas atmosphere, under suitable underlayer temperature, prepare ito thin film, oxidizing gas is adsorbed onto in ITO rete, same In, Sn atom combines, become a part for ITO rete crystal, reduce the quantity of the current carrier in ITO rete, reduce the gas resistance in ITO rete, avoid ito thin film to change rete resistance and gas resistance because of absorbing and reducing gas, avoid the resistance of ito thin film to reduce problem, thereby the resistance homogeneity poor problem of bringing for solving problem that resistance reduces that solved tradition.
Preparation method's technique of above-mentioned ito thin film is simple, when preparation, without the original resistance requirement of extra raising, can control preferably the quality of ito thin film.
The preparation method of above-mentioned ito thin film has fundamentally solved the problem that ito thin film resistance declines, can ensure to produce, the resistance of ito thin film all remains unchanged after client's inspection, client's processing procedure, thereby the resistance homogeneity that can control in process of production ito thin film ensures the resistance homogeneity of finished product, having avoided resistance to decline, corresponding landing differs and the linearity that causes is bad.
The resistance homogeneity of the ito thin film of being prepared by the preparation method of above-mentioned ito thin film can not reduce with processing as time goes by, be no matter through deposit for a long time or through cleaning, harsh and fit into after the techniques such as finished product, the homogeneity of its resistance all can not reduce, can not impact the quality of electronic product, there is the higher market competitiveness, can be widely used in resistive touch screen.
Further set forth by specific embodiment below.
Embodiment 1
1, provide 0.4mm thickness glass substrate, and glass substrate is cleaned, then pack glass into coating wire, utilize the well heater of coating wire, in glass traveling process, glass substrate is heated to 220 DEG C gradually, and maintain 220 DEG C.
2, while preparing ito thin film, pass into N
2as oxidizing gas, in oxidizing gas atmosphere, employing magnetron sputtering is prepared common transmitance for resistive touch screen in glass substrate, surface resistance scope is the ito thin film in 350～500 scopes.Wherein, N
2flow be 0.3sccm, adopt Ar as process gas, the flow of Ar is 120sccm, the voltage of magnetron sputtering is 350V, power is 3.2kw, plated film beat is 50s.
Adopting the transmittance of the UV2450 spectrophotometric determination ito thin film of Shimadzu production is >=90%.
The surface resistance that the SDY-5 type four point probe instrument that adopts Guangzhou semi-conductor to produce is measured prepared ito thin film is 380～425 ohm, the product preparing is normally packed, be positioned over normal humiture (temperature≤25 DEG C, humidity≤60%) control warehouse in placement, and deposit in warehouse 2 days, 7 days, 15 days, adopt respectively more identical method to measure the surface resistance of ito thin film, result is 375～430 ohm.By this product clean, harsh and fit into after TP finished product with ITO Film, then tear ITO Film, test I TO glass surface resistance, result is 368～423 ohm.Visible, adopt the resistance of the ito thin film prepared of the method very stable, avoid in preparation, providing resistance value to make follow-up reduction naturally of resistance value by traditional method and the problem of the lack of homogeneity that brings.
Embodiment 2
1, provide 0.7mm glass substrate, and glass substrate is cleaned, then pack glass into coating wire, utilize the well heater of coating wire, in glass traveling process, glass substrate is heated to 270 DEG C gradually, and maintain 270 DEG C.
2, while preparing ito thin film, pass into NO
2as oxidizing gas, in oxidizing gas atmosphere, adopt that magnetron sputtering prepares in glass substrate that transmitance is 93%, resistance range is high TP-400 ohm ito glass thoroughly for resistive touch screen of 400～600 ohm.Wherein, NO
2flow be 0.6sccm, adopt Ar as process gas, the flow of Ar is 120sccm, the voltage of magnetron sputtering is 312V, power is 1.85kw, plated film beat is 150s.
The transmittance that adopts Shimadzu to produce UV2450 spectrophotometric determination ito thin film is >=93%.
Adopting Guangzhou semi-conductor to produce SDY-5 type four point probe instrument, to measure the surface resistance of prepared ito thin film be 478～505 ohm, the product preparing is normally packed, be positioned over normal humiture (temperature≤25 DEG C, humidity≤60%) control warehouse in placement, and deposit in warehouse 2 days, 7 days, 15 days, adopt respectively more identical method to measure the surface resistance of ito thin film, result is 475～513 ohm.By this product clean, harsh and fit into after TP finished product with ITO Film, then tear ITO Film, test I TO glass surface resistance, result is 468～523 ohm.Visible, adopt the resistance of the ito thin film prepared of the method very stable, avoid in preparation, providing resistance value to make follow-up reduction naturally of resistance value by traditional method and the problem of the lack of homogeneity that brings.
Embodiment 3
1, provide 1.1mm glass substrate, and glass substrate is cleaned, then pack glass into coating wire, utilize the well heater of coating wire, in glass traveling process, glass substrate is heated to 280 DEG C gradually, and maintain 280 DEG C.
2, pass into Ar and N
2mixed gas as oxidizing gas (Ar and N
2volume ratio be 95:5), in oxidizing gas atmosphere, adopt magnetron sputtering in glass substrate, prepare common transmitance for resistive touch screen, resistance range is the ito thin film in 350～500 scopes.Wherein, Ar and N
2the flow of mixed gas be 8sccm, adopt Ar as process gas, the flow of Ar is 150sccm, the voltage of magnetron sputtering is 343V, power is 2.3kw, plated film beat is 150s.
The transmittance that adopts Shimadzu to produce UV2450 spectrophotometric determination ito thin film is >=90%.
Adopting Guangzhou semi-conductor to produce SDY-5 type four point probe instrument, to measure the surface resistance of prepared ito thin film be 410～450 ohm, the product preparing is normally packed, be positioned over normal humiture (temperature≤25 DEG C, humidity≤60%) control warehouse in placement, and deposit in warehouse 2 days, 7 days, 15 days, adopt respectively more identical method to measure the surface resistance of ito thin film, result is 405～460 ohm.By this product clean, harsh and fit into after TP finished product with ITO Film, then tear ITO Film, test I TO glass surface resistance, result is 400～458 ohm.Visible, adopt the resistance of the ito thin film prepared of the method very stable, avoid in preparation, providing resistance value to make follow-up reduction naturally of resistance value by traditional method and the problem of the lack of homogeneity that brings.
Embodiment 4
1, provide 1.8mm glass substrate, and glass substrate is cleaned and is dried, and glass substrate is cleaned, then glass is packed into coating wire, utilize the well heater of coating wire, in glass traveling process, glass substrate is heated to 310 DEG C gradually, and maintain 310 DEG C.
2, pass into Ar and NO
2mixed gas as oxidizing gas (Ar and NO
2volume ratio be 85:15), in oxidizing gas atmosphere, adopt magnetron sputtering in glass substrate, prepare common transmitance for resistive touch screen, resistance range is the ito thin film in 350～500 scopes.Wherein, Ar and NO
2the flow of mixed gas be 10sccm, adopt Ar as process gas, the flow of Ar is 150sccm, the voltage of magnetron sputtering is 320V, power is 3.5kw, plated film beat is 50s.
Adopting the transmittance of the UV2450 spectrophotometric determination ito thin film of Shimadzu production is >=90%.
The surface resistance that the SDY-5 type four point probe instrument that adopts Guangzhou semi-conductor to produce is measured prepared ito thin film is 410～470 ohm, the product preparing is normally packed, be positioned over normal humiture (temperature≤25 DEG C, humidity≤60%) control warehouse in placement, and deposit in warehouse 2 days, 7 days, 15 days, adopt respectively more identical method to measure the surface resistance of ito thin film, result is 405～482 ohm.By this product clean, harsh and fit into after TP finished product with ITO Film, then tear ITO Film, test I TO glass surface resistance, result is 398～475 ohm.Visible, adopt the resistance of the ito thin film prepared of the method very stable, avoid in preparation, providing resistance value to make follow-up reduction naturally of resistance value by traditional method and the problem of the lack of homogeneity that brings.
Embodiment 5
1, provide 1.1mm glass substrate, and glass substrate is cleaned, then pack glass into coating wire, utilize the well heater of coating wire, in glass traveling process, glass substrate is heated to 300 DEG C gradually, and maintain 300 DEG C.
2, while preparing ito thin film, pass into NO as oxidizing gas, in oxidizing gas atmosphere, adopt that magnetron sputtering prepares in glass substrate that transmitance is 93%, resistance range is high TP-350 ohm ito glass thoroughly for resistive touch screen of 350～500 ohm.Wherein, the flow of NO is 6sccm, adopts Ar as process gas, and the flow of Ar is 120sccm, and the voltage of magnetron sputtering is 285V, and power is 2Kw, and plated film beat is 150s.
The transmittance that adopts Shimadzu to produce UV2450 spectrophotometric determination ito thin film is >=90%.
Adopting Guangzhou semi-conductor to produce SDY-5 type four point probe instrument, to measure the surface resistance of prepared ito thin film be 498～535 ohm, the product preparing is normally packed, be positioned over normal humiture (temperature≤25 DEG C, humidity≤60%) place after 2 days, 7 days, 15 days in the warehouse controlled, then to adopt the surface resistance of identical method mensuration ito thin film be 485～533 ohm.By this product clean, harsh and fit into after TP finished product with ITO Film, then tear ITO Film, test I TO glass surface resistance, result is 480～537 ohm.Visible, adopt the resistance of the ito thin film prepared of the method very stable, avoid in preparation, providing resistance value to make follow-up reduction naturally of resistance value by traditional method and the problem of the lack of homogeneity that brings.
Embodiment 6
1, provide 0.7mm glass substrate, and glass substrate is cleaned, then pack glass into coating wire, utilize the well heater of coating wire, in glass traveling process, glass substrate is heated to 270 DEG C gradually, and maintain 270 DEG C.
2, while preparing ito thin film, pass into NO
2as oxidizing gas, in oxidizing gas atmosphere, adopt that magnetron sputtering prepares in glass substrate that transmitance is 90%, resistance range is high TP-400 ohm ito glass thoroughly for resistive touch screen of 350～500 ohm.Wherein, NO
2flow be 0.1sccm, adopt Ar as process gas, the flow of Ar is 120sccm, the voltage of magnetron sputtering is 278V, power is 2.1Kw, plated film beat is 150s.
The transmittance that adopts Shimadzu to produce UV2450 spectrophotometric determination ito thin film is >=93%.
Adopting Guangzhou semi-conductor to produce SDY-5 type four point probe instrument, to measure the surface resistance of prepared ito thin film be 412～455 ohm, the product preparing is normally packed, be positioned over normal humiture (temperature≤25 DEG C, humidity≤60%) place after 2 days, 7 days, 15 days in the warehouse controlled, then to adopt the surface resistance of identical method mensuration ito thin film be 403～450 ohm.By this product clean, harsh and fit into after TP finished product with ITO Film, then tear ITO Film, test I TO glass surface resistance, result is 405～465 ohm.Visible, adopt the resistance of the ito thin film prepared of the method very stable, avoid in preparation, providing resistance value to make follow-up reduction naturally of resistance value by traditional method and the problem of the lack of homogeneity that brings.
Embodiment 7
1, provide 1.8mm glass substrate, and glass substrate is cleaned and is dried, and glass substrate is cleaned, then glass is packed into coating wire, utilize the well heater of coating wire, in glass traveling process, glass substrate is heated to 310 DEG C gradually, and maintain 310 DEG C.
2, pass into Ar and NO
2mixed gas as oxidizing gas (Ar and NO
2volume ratio be 85:15), in oxidizing gas atmosphere, adopt magnetron sputtering in glass substrate, prepare common transmitance for resistive touch screen, resistance range is the ito thin film in 350～500 scopes.Wherein, Ar and NO
2the flow of mixed gas be 50sccm, adopt Ar as process gas, the flow of Ar is 150sccm, the voltage of magnetron sputtering is 320V, power is 3.5Kw, plated film beat is 50s.
Adopting the transmittance of the UV2450 spectrophotometric determination ito thin film of Shimadzu production is >=90%.
The surface resistance that the SDY-5 type four point probe instrument that adopts Guangzhou semi-conductor to produce is measured prepared ito thin film is 395～465 ohm, the product preparing is normally packed, be positioned over normal humiture (temperature≤25 DEG C, humidity≤60%) place after 2 days, 7 days, 15 days in the warehouse controlled, then to adopt the surface resistance of identical method mensuration ito thin film be 390～460 ohm.By this product clean, harsh and fit into after TP finished product with ITO Film, then tear ITO Film, test I TO glass surface resistance, result is 388～475 ohm.Visible, adopt the resistance of the ito thin film prepared of the method very stable, avoid in preparation, providing resistance value to make follow-up reduction naturally of resistance value by traditional method and the problem of the lack of homogeneity that brings.
Embodiment 8
1, provide 1.1m glass substrate, and glass substrate is cleaned and is dried, and glass substrate is cleaned, then glass is packed into coating wire, utilize the well heater of coating wire, in glass traveling process, glass substrate is heated to 290 DEG C gradually, and maintain 290 DEG C.
2, pass into Ar and NO
2mixed gas as oxidizing gas (Ar and NO
2volume ratio be 85:15), in oxidizing gas atmosphere, adopt magnetron sputtering in glass substrate, prepare 93% transmitance for resistive touch screen, resistance range is the ito thin film in 350～500 scopes.Wherein, Ar and NO
2the flow of mixed gas be 0.5sccm, adopt Ar as process gas, the flow of Ar is 120sccm, the voltage of magnetron sputtering is 320V, power is 2.05Kw, plated film beat is 78s.
Adopting the transmittance of the UV2450 spectrophotometric determination ito thin film of Shimadzu production is >=93%.
The surface resistance that the SDY-5 type four point probe instrument that adopts Guangzhou semi-conductor to produce is measured prepared ito thin film is 380～445 ohm, the product preparing is normally packed, be positioned over normal humiture (temperature≤25 DEG C, humidity≤60%) place after 2 days, 7 days, 15 days in the warehouse controlled, then to adopt the surface resistance of identical method mensuration ito thin film be 375～455 ohm.By this product clean, harsh and fit into after TP finished product with ITO Film, then tear ITO Film, test I TO glass surface resistance, result is 368～465 ohm.Visible, adopt the resistance of the ito thin film prepared of the method very stable, avoid in preparation, providing resistance value to make follow-up reduction naturally of resistance value by traditional method and the problem of the lack of homogeneity that brings.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (6)
1. a preparation method for ito thin film, is characterized in that, comprises the steps:
Substrate is provided, described substrate is heated, and described substrate is maintained to 220～310 DEG C;
In oxidizing gas atmosphere, on described substrate, prepare ito thin film, wherein, described oxidizing gas is selected from N
2, NO and NO
2in one, or be selected from Ar and N
2gas mixture and Ar and the NO of mixed gas, Ar and NO
2gas mixture in one.
2. the preparation method of ito thin film according to claim 1, is characterized in that, the described step of preparing ito thin film on described substrate is to adopt magnetron sputtering to prepare ito thin film on described substrate.
3. the preparation method of ito thin film according to claim 1, is characterized in that, described in substrate is provided, described substrate is heated, and described substrate is maintained to the step of 220～310 DEG C is that described substrate is maintained to 250～280 DEG C.
4. the preparation method of ito thin film according to claim 1, is characterized in that, described Ar and N
2mixed gas in, Ar and N
2volume ratio be 95:5,90:10,85:15 or 80:20; In the gas mixture of described Ar and NO, the volume ratio of Ar and NO is 95:5,90:10,85:15 or 80:20; Described Ar and NO
2gas mixture in, Ar and NO
2volume ratio be 95:5,90:10,85:15 or 80:20.
5. the preparation method of ito thin film according to claim 1, is characterized in that, described N
2, NO and NO
2flow be 0.1～6sccm, described Ar and N
2gas mixture and Ar and the NO of mixed gas, Ar and NO
2the flow of gas mixture be 0.5～50sccm.
6. an ito thin film of being prepared by the preparation method of the ito thin film as described in claim 1～5 any one.
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|---|---|---|---|
| CN201410317189.7A CN104109838A (en) | 2014-07-04 | 2014-07-04 | ITO film and preparation method thereof |
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|---|---|---|---|
| CN201410317189.7A CN104109838A (en) | 2014-07-04 | 2014-07-04 | ITO film and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637078A (en) * | 2016-11-30 | 2017-05-10 | 陈德成 | Film manufacturing method |
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| JPS6314190A (en) * | 1986-07-05 | 1988-01-21 | 沖電気工業株式会社 | Formation of thin film on ito film |
| JPH0784654B2 (en) * | 1989-07-13 | 1995-09-13 | 株式会社ジャパンエナジー | Method for manufacturing sputtering target for ITO transparent conductive film |
| CN1446940A (en) * | 2002-03-27 | 2003-10-08 | 住友金属矿山株式会社 | Transparent conducting film, its mfg. method and intered body target for mfg. and transparent conductive substrate or organic electroluminescent component |
| CN1600895A (en) * | 2004-10-12 | 2005-03-30 | 山东大学 | Method for preparing transparent conducting film made from multi-element oxides with antimony being doped into |
| CN102157575A (en) * | 2011-03-28 | 2011-08-17 | 天津师范大学 | Novel transparent conducting oxide thin film with multi-layer film structure and manufacturing method thereof |
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2014
- 2014-07-04 CN CN201410317189.7A patent/CN104109838A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6314190A (en) * | 1986-07-05 | 1988-01-21 | 沖電気工業株式会社 | Formation of thin film on ito film |
| JPH0784654B2 (en) * | 1989-07-13 | 1995-09-13 | 株式会社ジャパンエナジー | Method for manufacturing sputtering target for ITO transparent conductive film |
| CN1446940A (en) * | 2002-03-27 | 2003-10-08 | 住友金属矿山株式会社 | Transparent conducting film, its mfg. method and intered body target for mfg. and transparent conductive substrate or organic electroluminescent component |
| CN1600895A (en) * | 2004-10-12 | 2005-03-30 | 山东大学 | Method for preparing transparent conducting film made from multi-element oxides with antimony being doped into |
| CN102157575A (en) * | 2011-03-28 | 2011-08-17 | 天津师范大学 | Novel transparent conducting oxide thin film with multi-layer film structure and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637078A (en) * | 2016-11-30 | 2017-05-10 | 陈德成 | Film manufacturing method |
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Application publication date: 20141022 |