CN104103740B - 发光装置 - Google Patents
发光装置 Download PDFInfo
- Publication number
- CN104103740B CN104103740B CN201410130850.3A CN201410130850A CN104103740B CN 104103740 B CN104103740 B CN 104103740B CN 201410130850 A CN201410130850 A CN 201410130850A CN 104103740 B CN104103740 B CN 104103740B
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- Prior art keywords
- light
- led
- emitting device
- light source
- crystal film
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Classifications
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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Abstract
本发明公开了一种发光装置，包括：一光源本体、一导线架、一LED晶粒、一齐纳二极管、一混体、一三维荧光球光子晶体薄膜。导线架置于光源本体底部，LED晶粒置于导线架上方，混体置于光源本体内部，三维荧光球光子晶体薄膜置于于光源本体的表面或内部，且包括至少一荧光奈米微粒，而一导线与LED晶粒及齐纳二极管作电性连接。
Description
技术领域
本发明涉及一个可调变色温及演色性且具有更高效率的发光装置结构，特别针对于在光源本体上涂布含有荧光奈米微粒的三维荧光球光子晶体薄膜形成一可调变色温及演色性且具有更高效率的发光装置结构。
背景技术
全球LED产业的发展以白光LED应用于照明市场为发展主轴，白光LED能让光源寿命较传统发光组件提高10倍以上，另外在发光效率方面也更为提升，而白光LED更可以解决废弃灯管所含汞的环保问题，尤其在环保光源日益受到重视后，白光LED已经成为开发环保光源的首要选择。
目前白光LED发光效率较传统白炽灯泡高出一倍以上，在台湾地区，假设白炽灯泡及日光灯完全被白光LED取代，每年可省下超过100亿度电力，大约是1座核能发电厂的年发电量。照明使用的白光LED，其演色性必须高于80，目前采用的方法为蓝光LED晶粒所发射蓝光与绿色（(Sr,Ca,Ba)SixOyNz:Eu2+、Lu3Al5O12:Ce3+）、黄色(Y3Al5O12:Ce3+、Tb3Al5O12:Ce3+、(Mg,Ba,Ca,Sr)2SiO4:Eu2+)和红色（(Ca,Sr)2Si5N8:Eu2+、(Ca,Sr)AlSiN3:Eu2+）荧光粉的激发光组合而成的白光，并依据不同颜色荧光粉的混合比例浓度来达到不同的色温和演色性；或是利用红、绿、蓝3种发光二极管调整其个别亮度来达到白光效果。
一般发光二极管主要包括一基底、一发光层以及至少一个电极，其中发光层由P型半导体、主动层以及N型半导体依序堆栈而成。当N型半导体与P型半导体之间因电位不同而形成一电位差时，N型半导体中的电子与P型半导体中的电洞则会在主动层结合而发出光线。
发光二极管的发光效率主要取决于主动层的量子效率(光生电子-空穴对数/入射光子数，即发光组件对光敏感性的精确测量)，以及发光二极管的光引出效率(extractionefficiency)。其中，量子效率的提升主要取决于主动层的半导体材料质量及其结构的组合，而光引出效率的提升则取决于从主动层发出的光线的有效利用率。
在LED照明设备中，一项重要的参数就是色温，这关系到LED灯光照明产品所显示的颜色特性，一般的灯具也都有色温的规格。色温高低计量单位是以凯氏刻度(KelvinScale)K为单位，在不同色温下使人对光有不同的感受，色温大致可分为三个区块，暖白光属低色温，范围在3400K以下，光色偏红使人有温暖的感觉，当采用低色温光源照射红色物品时，能使其表现更鲜艳；中色温范围在3400--6000K，由于光线柔和，使人有愉快、舒适及安详的感受，所以也称为中性色温；冷白光属高色温，范围则超过6000K，光色偏蓝，光源接近自然光，有明亮的感觉，使人精神集中及不容易睡着。
降低色温的目的为使光线由户外高明亮度转换成室内温和舒适感。依目前技术，得到暖白光LED的色温的方法包括提高荧光粉浓度，如冷白光LED降为暖白光LED，则必需将绿色荧光粉提高为原来的一点五倍和红色荧光粉提高为原来的三倍以上，才能达到降低色温的要求，但此等方法不仅会增加成本，且会使白光发光效率大大降低；另若使用色温转换滤光片(Conversion Color Temperature Filter)，其色温转换滤光片亦会使白光发光效率大大降低。此外，传统使用在发光组件上封胶体的材质较不单一，质量亦参差不齐，纵使LED有良好的发光效率也会因封胶体透明度不足，造成视觉上较无明亮感的缺点。
因此，如何有效任意降低光线的色温，不必依靠提高荧光粉浓度，仍可维持或甚至提高发光效率且具有视觉上的明亮感为本发明的重点。
发明内容
为解决先前技术发光组件中所提及，以提高荧光粉浓度降低色温的方式，不但使成本增加，且会使白光发光效率降低的问题，本发明的目的在于提供一种发光装置。
为达到上述目的，本发明采用以下技术方案：
一种发光装置包括：一光源本体、一导线架、一LED晶粒、一齐纳二极管、一三维荧光球光子晶体薄膜、一混体与一封胶板，其相对位置为将导线架置于光源本体底部、LED晶粒置于导线架上方、光源本体内部填充混体、三维荧光球光子晶体薄膜置于光源本体的表面或内部，且包括至少一荧光奈米微粒，与至少一导线与LED晶粒及齐纳二极管作电性连接。
导线架的材质可以为铜合金、科瓦(Kovar)合金或铁镍合金。三维荧光球光子晶体薄膜涂布于光源本体的表面的方式可以为喷墨式、喷洒式、喷嘴式、刮刀式、旋转式或狭缝式。粒子堆栈于光源本体的堆栈结构可以为体心立方式、面心立方式和简单立方式的晶体结构，并且粒子与粒子间的排列可以为四角和六角的松散式或紧密式晶格结构。三维荧光球光子晶体薄膜的粒子大小可以为100～800奈米(nm)，膜厚为1～500微米(μm)，其材质可选自于有机高分子、无机高分子、有机化合物、无机化合物、金属或其组合，其中有机高分子如聚苯乙烯系列、聚甲基丙烯酸甲酯系列、聚马来酸系列、聚乳酸系列、聚胺基酸系列的高分子或其组合，无机化合物如Ag2O、CuO、ZnO、CdO、NiO、PdO、CoO、MgO、SiO2、SnO2、TiO2、ZrO2、HfO2、ThO2、CeO2、CoO2、MnO2、IrO2、VO2、WO3、MoO3、Al2O3、Y2O3、Yb2O3、Dy2O3、B2O3、Cr2O3、Fe2O3、Fe3O4、V2O5、Nb2O5、ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、FeS、FeSe、FeTe、CoS、CoSe、CoTe、NiS、NiSe、NiTe、PbS、PbSe、PbTe、MnS、MnSe、MnTe、SnS、SnSe、SnTe、MoS2、MoSe2、MoTe2、WS2、WSe2、WTe2、Cu2S、Cu2Se、Cu2Te、Bi2S3、Bi2Se3、Bi2Te3、SiC、TiC、ZrC、WC、NbC、TaC、Mo2C、BN、AlN、TiN、ZrN、VN、NbN、TaN、Si3N4、Zr3N4或其组合，金属如Au、Ag、Cu、Fe、Co、Ni、Pd、Pt、Al、Si、Ti、Zr、V、Nb、Mo、W、Mn或其组合。
本发明中三维荧光球光子晶体薄膜的粒子堆栈构造中，更混入了荧光奈米微粒，荧光奈米微粒可被包覆在其粒子内或表面，散布于三维荧光球光子晶体薄膜中；荧光奈米微粒的材质可选自奈米荧光粉、荧光染料、荧光染剂或其混和物；其中，奈米荧光粉可为一般荧光粉、奈米有机荧光粉和奈米无机荧光粉，经由磨球机磨至纳米大小粒径，而荧光染料可为红色染料、蓝色染料、绿色染料、黄色染料等其他非无彩色染料，而荧光染剂可为有机高分子、无机高分子、有机化合物、无机化合物、金属或其组合。
而混体则包括一荧光粉与一光学胶，荧光粉可为黄色、蓝色、绿色、橙色或红色或其组合，其材质是选自于有机荧光粉、荧光颜料、无机荧光粉、放射性元素或其组合，光学胶的材质可选自于有机高分子、无机高分子、有机聚合物、无机聚合物、金属化合物或其组合；此外，光源本体更可由封胶板封装，封胶板可为硅封胶板(Silicon)，具有视觉上较为明亮的效果，且拥有不易因温度变质、不易因气候老化变脆、良好的吸震性及绝缘性的特点，因此极度适合用于电子产品上。
发光装置的电流值操作范围可以为0.01毫安(mA)～10安培(A)。其中，导线架还包括导线，导线可以为金线、铜线或银线，导线与LED晶粒及齐纳二极管作电性连接。
本发明系以制作特定三维荧光球光子晶体薄膜的粒子后，将粒子涂布于光源本体的表面上形成薄膜，其中经过实验数据而得到三维荧光球光子晶体薄膜除了可成功降低白光的色温之外，还能提高白光的发光效率，而粒子堆积排列方式也是影响调整白光色温和演色性的重点参数。
本发明的三维荧光球光子晶体薄膜的粒子间的空隙与粒子间的相对位置具有高度的可微调性，藉此能微调整三维荧光球光子晶体薄膜的等效折射率、粒子间堆积的紧密度与粒子排列方式，利用光线在粒子与空气的折射率差异，决定可通过三维荧光球光子晶体薄膜光线的波段，且散布于三维荧光球光子晶体薄膜粒子间的荧光奈米微粒具有吸收其他波段色光、转换并提高特定所需波段色光的能力，除了通过上述两种机制改变白光色温和演色性之外，可更进一步提高发光效率，在调整白光色温和演色性技术属一大突破。因此，由三维荧光球光子晶体薄膜的可调变色温和演色性的特性，即可有效降低光线的色温，提高发光效率及高演色性，且因不需提高荧光粉浓度，更可有效减少成本支出。
附图说明
图1为本发明实施例一的示意图。
图2为本发明实施例二的示意图。
图3为本发明实施例三的示意图。
图4为本发明三维荧光球光子晶体薄膜的扫描式电子显微镜图。
图5为本发明荧光奈米微粒分布的穿透式电子显微镜图。
图6为本发明荧光奈米微粒分布的示意图。
图7为本发明使用三维荧光球光子晶体薄膜前后差异的折线图。
【符号说明】
101 导线架 102 LED晶粒 103 导线 104 混体
1041 板状混体 105 光源本体 106 齐纳二极管 201 封胶板
1071 荧光奈米微粒 107 三维荧光球光子晶体薄膜
具体实施方式
为能了解本发明的技术特征及实用功效，并可依照说明书的内容来实施，兹进一步以如图式所示的较佳实施例，详细说明如后：
请参阅图1，图1为本发明实施例一的示意图。如图1所示，本发明的实施例一中包括：一光源本体105、一导线架101、导线103、一LED晶粒102、一三维荧光球光子晶体薄膜107、一齐纳二极管106与一混体104。其相对位置为将导线架101置于光源本体105底部，LED晶粒102置于导线架101上方，光源本体105内部填充满混体104，三维荧光球光子晶体薄膜107涂布于光源本体105的表面，导线架101包括导线103与LED晶粒102及齐纳二极管106作电性连接。
导线架101的制作材料需要考虑其导电性、热传导性、机械强度、焊接性与抗腐蚀性，常使用的材质为铜合金、42合金(镍:42%、铁:58%)、科瓦合金(镍:29%、钴:17%、铁:54%)与铁镍合金(铁:42%、镍:58%)。
在导线103材料选择当中，可为金、银或铜。金、银与铜为导电速率最快的前三名，金的稳定性最好导电速率也最快，但其成本较为高，铜的单价最便宜，其耐离子迁移率性质佳。
LED晶粒102制程步骤可分为上游、中游及下游，上游包括形成基板(蓝宝石，陶瓷，金属)→单晶棒(GaN，GaAs，GaP) →单芯片→结构设计→磊芯片，中游包括金属蒸镀→光照蚀刻→热处理→切割，下游封装则包括覆晶式(Flip-chip)、芯片黏着式(SMD，surfacemount device)与芯片封装式(COB，chip on board)；而LED晶粒102形式可为传统蓝宝石基板（Sapphire-based）LED、覆晶式（Flip-chip）LED和垂直式（Vertical）LED。
三维荧光球光子晶体薄膜107于制造其粒子时混入一荧光奈米微粒1071，之后将三维荧光球光子晶体薄膜107涂布于光源本体105，其方式包括喷墨式(ink-jet)、喷洒式(spray)、喷嘴式(nozzle)、刮刀式(blade)、旋转式(spin)或狭缝式(slit)。喷墨式、喷洒式与喷嘴式的工作原理是利用计算机程序控制步进马达带动喷嘴前后左右移动，从喷墨头中喷出的墨水依序喷布于组件上，完成着色的工作；刮刀式系将涂布着料储存于墨斗内，由滚墨轮滚动涂布将着料带出，经由刮刀控制厚度，将着料涂布至组件上;旋转式多应用于光电与半导体制程，以旋转涂布方式将液体滴至芯片中央；狭缝式为利用一模具挤出一液膜，涂布于移动的基材上。
荧光奈米微粒1071为直径小于100奈米(nm)的粒子，其系由荧光染料、荧光染剂或其混和物所组成；其中，荧光染料可为红色染料、蓝色染料、绿色染料、黄色染料等其他有彩色染料或其依任意比例混色的有彩色染料；而荧光染剂则可为罗丹明(Rhodamine)、藻红素(Phycoerythrin)或异硫氰酸荧光素(Fluorescein isothiocyanate)等常见荧光染剂。荧光染料在化学上的分类为混和物，其材料可选自有机高分子、无机高分子、有机化合物、无机化合物、金属或其组合；而荧光染剂则为化合物，其材料亦可选自有机高分子、无机高分子、机化合物、无机化合物、金属或其组合。
三维荧光球光子晶体薄膜107的粒子堆栈结构可以为体心立方式(Body-CenteredCubic Crystal Structure)、面心立方式(Face-Centered Cubic Crystal Structure)和简单立方式(Simple cubic lattice)的晶体结构，并且粒子与粒子间的排列可以为四角和六角的松散式(non-close-packed crystal structure)或紧密式(close-packed crystalstructure)晶格结构。每一个体心立方单位里含有2个粒子，有8个角落粒子，角落每一个粒子系八分之一个粒子，在中心的单一粒子，则全部包含于此单位中，体心立方式的粒子堆积密度为68%；每一面心立方式单位共有4个粒子，内含有8个角落粒子和6个面心粒子，面心粒子为二分之一个粒子，加总共有4个完整粒子被分配于一单位，其粒子堆积密度为74%；简单立方在每个单位内含有8个角落粒子，共有1个完整粒子被分配于一单位，粒子堆积密度为52%。
混体104包括一荧光粉与一光学胶，荧光粉材料由主晶体、助活化剂（敏感剂）与活化剂组成。荧光粉可以为黄色、蓝色、绿色、橙色、红色或其组合，如黄橙色和红黄色的氮化物荧光粉。当荧光物质接受光能量后，其外层电子受激发至高能阶的激发状态后，回到原有的低能阶状态时，能阶差的能量以光的形式发射出来。
光学胶系保护LED晶粒102避免电气和环境损害，混体104必须把光源本体105区域内全部灌满，若有空气间隙(air cap)，则会有思乃尔效应(snell loss)而大大降低出光量。传统上，光学胶多由环氧树脂(epoxy)和有机高分子所制成，如今LED照明市场朝向更高功率且高亮度的发展，无机硅封胶（silicon）则愈来愈广为使用，硅封胶不仅可耐高温程度承受较环氧树脂为高，和更好的透光率。
请参阅图2，图2为本发明实施例二的示意图。如图2所示，本发明的实施例二中包括：一光源本体105、一导线架101、导线103、一LED晶粒102、一三维荧光球光子晶体薄膜107、一齐纳二极管106与一板状混体1041。其相对位置为将导线架101置于光源本体105底部，LED晶粒102置于导线架101上方，光源本体105以板状混体1041封装，三维荧光球光子晶体薄膜107涂布于板状混体1041的正面或背面，导线架101包括至少一导线103与LED晶粒102及齐纳二极管106作电性连接。
本实施例二中，除了板状混体1041之外，其余的材料及制程请参照图1的说明；板状混体1041为依照光源本体105的开口大小，以玻璃基板为基底压制合并而成的胶体复合板状结构，并封装在光源本体105上；板状混体1041包括一荧光粉或还可包括一光学胶，荧光粉材料由主晶体、助活化剂（敏感剂）与活化剂组成。荧光粉可以为黄色、蓝色、绿色、橙色、红色或其组合，如黄橙色和红黄色的氮化物荧光粉。当荧光物质接受光能量后，其外层电子受激发至高能阶的激发状态后，回到原有的低能阶状态时，能阶差的能量以光的形式发射出来；光学胶可由硅胶(silicon)、环氧树脂(epoxy)和有机高分子所制成。此外，板状混体1041被设计为远程荧光粉结构(Remote Phosphor)，可以增加发光装置的光输出量。
请参阅图3，图3为本发明实施例三的示意图。如图3所示，本发明的实施例三中包括：一光源本体105、一导线架101、导线103、一LED晶粒102、一三维荧光球光子晶体薄膜107、一齐纳二极管106、一混体104与一封胶板201。其相对位置为将导线架101置于光源本体105底部，LED晶粒102置于导线架101上方，LED晶粒102由混体104包覆于光源本体105内部，而三维荧光球光子晶体薄膜107涂布于混体104的表面及部分光源本体105与导线架101上，但未涂布在齐纳二极管106上，导线架101包括导线103与LED晶粒102及齐纳二极管106作电性连接，最后，光源本体105以封胶板201封装。此外，混体104的形式被设计为适形涂布结构(Conformal Phosphor)，可以增加发光装置的白光颜色均匀性。
本实施例三中，除了封胶板201之外，其余的材料及制程请参照图1的说明；封胶板201可为硅封胶板(Silicon)，硅封胶板具有极佳的温度稳定性，可在摄氏-40度到200度之间稳定使用不变性，对于气候变化亦有极佳的耐适性，纵使长时间置于户外也不易老化龟裂，此外，还具有良好的吸震能力及极佳的绝缘性，最重要的一点是，能有提供发光装置相当不错的光输出量。
请参阅图4、图5及图6，图4为本发明三维荧光球光子晶体薄膜的扫描式电子显微镜图；图5为本发明荧光奈米微粒分布的穿透式电子显微镜图；图6为本发明荧光奈米微粒分布的示意图。其中，图4及图5系透过场效发射式电子显微镜(Field-emission scanningelectron microscope，FESEM)所拍摄，揭示了三维荧光球光子晶体薄膜107及其粒子与荧光奈米微粒1071的结构与关系；如图4所示，三维荧光球光子晶体薄膜107及其粒子的排列模式可为排列紧密式（close-packed），如图5所示，三维荧光球光子晶体薄膜107及其粒子的排列模式可为排列松散式（non-close-packed），且其粒径为500奈米(nm)，而荧光奈米微粒1071的分布模式可为包覆于三维荧光球光子晶体薄膜107粒子之中或散布于其表面，如图6所示。
请参阅图7，图7为本发明使用三维荧光球光子晶体薄膜前后差异的折线图。如图7所示，横轴为LED所发出的光波波长，介于400到800奈米(nm)之间，纵轴为各波段色光的相对发光强度(Arbitrary unit(arb.unit))；其中，纯黑色线条为色温7000K(凯氏刻度(Kelvin Scale))LED单独使用时所测得的各波长光波其相对发光强度折线，而带有矩形的浅色线条为使用三维荧光球光子晶体薄膜107，且色温同为7000K(凯氏刻度(KelvinScale))的LED所测得的各波长光波其相对发光强度折线；显示出使用了三维荧光球光子晶体薄膜107的LED可有效降低光波波长位于蓝紫光400～475奈米(nm)的相对发光强度，转换并提升光波波长位于绿光520～550奈米(nm)的相对发光强度。
最后，请参照表1，表1解释了各色温分别为7000K、6500K及5500K的LED样品在使用了三维荧光球光子晶体薄膜107前后的光通量、功率、色温、演色性及其发光效率增幅强度的比较，可看出无论是7000K、6500K及5500K的LED，在使用了三维荧光球光子晶体薄膜107后，皆具有提高光通量及发光效率的效果，且色温及演色性皆降低为视觉上较为舒适的中色温范围(3400～6000K)，兹以证明本发明的成果。
表1
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。
Claims (20)
1.一种发光装置，其特征在于包括：
一光源本体；
一导线架，置于光源本体底部；
一LED晶粒，置于导线架上方；
一混体，置于光源本体内部，且包覆LED晶粒，混体包括一荧光粉与一光学胶；以及
一三维荧光球光子晶体薄膜，涂布于混体的表面及部分光源本体与导线架上，
三维荧光球光子晶体薄膜具有至少一荧光奈米微粒；
其中，发光装置还包括一封胶板，置於光源本体外部，封胶板的材质为硅胶。
2.如权利要求1所述的发光装置，其特征在于LED晶粒为蓝色LED、红色LED、绿色LED或紫外光LED。
3.如权利要求1所述的发光装置，其特征在于LED晶粒形式为传统蓝宝石基板LED、覆晶式LED和垂直式LED。
4.如权利要求1所述的发光装置，其特征在于三维荧光球光子晶体薄膜的涂布方式为喷墨式、喷洒式、喷嘴式、刮刀式、旋转式或狭缝式，涂布于光源本体内部。
5.如权利要求1所述的发光装置，其特征在于荧光奈米微粒位于三维荧光球光子晶体薄膜的粒子内部或表面。
6.如权利要求1所述的发光装置，其特征在于荧光奈米微粒的材质选自奈米荧光粉、奈米有机荧光粉、奈米无机荧光粉、荧光染料、荧光染剂或其混和物。
7.如权利要求1所述的发光装置，其特征在于三维荧光球光子晶体薄膜的粒子堆栈结构方式为体心立方式、面心立方式、简单立方式的晶体结构，而粒子与粒子间的排列为四角或六角的紧密式和松散式晶格结构，且堆栈于光源本体的表面。
8.如权利要求1所述的发光装置，其特征在于三维荧光球光子晶体薄膜的粒子平均粒径为100～800奈米。
9.如权利要求1所述的发光装置，其特征在于三维荧光球光子晶体薄膜的厚度为1～500微米。
10.如权利要求1所述的发光装置，其特征在于三维荧光球光子晶体薄膜的粒子的材质选自于一有机高分子、一无机高分子、一有机化合物、一无机化合物、一金属或其组合。
11.如权利要求10所述的发光装置，其特征在于有机高分子为聚苯乙烯系列、聚甲基丙烯酸甲酯系列、聚马来酸系列、聚乳酸系列、聚胺基酸系列的高分子或其组合。
12.如权利要求10所述的发光装置，其特征在于无机化合物为Ag2O、CuO、ZnO、CdO、NiO、PdO、CoO、MgO、SiO2、SnO2、TiO2、ZrO2、HfO2、ThO2、CeO2、CoO2、MnO2、IrO2、VO2、WO3、MoO3、Al2O3、Y2O3、Yb2O3、Dy2O3、B2O3、Cr2O3、Fe2O3、Fe3O4、V2O5、Nb2O5、ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、FeS、FeSe、FeTe、CoS、CoSe、CoTe、NiS、NiSe、NiTe、PbS、PbSe、PbTe、MnS、MnSe、MnTe、SnS、SnSe、SnTe、MoS2、MoSe2、MoTe2、WS2、WSe2、WTe2、Cu2S、Cu2Se、Cu2Te、Bi2S3、Bi2Se3、Bi2Te3、SiC、TiC、ZrC、WC、NbC、TaC、Mo2C、BN、AlN、TiN、ZrN、VN、NbN、TaN、Si3N4、Zr3N4或其组合。
13.如权利要求10所述的发光装置，其特征在于金属为Au、Ag、Cu、Fe、Co、Ni、Pd、Pt、Al、Si、Ti、Zr、V、Nb、Mo、W、Mn或其组合。
14.如权利要求1所述的发光装置，其特征在于发光装置的电流值操作范围为0.01毫安～10安培。
15.如权利要求1所述的发光装置，其特征在于导线架的材质为铜合金、科瓦合金或铁镍合金。
16.如权利要求1所述的发光装置，其特征在于导线架包括线，导线与LED晶粒及一齐纳二极管作电性连接。
17.如权利要求16所述的发光装置，其特征在于导线为金线、铜线或银线。
18.如权利要求1所述的发光装置，其特征在于荧光粉为黄色、蓝色、绿色、橙色、红色或其组合。
19.如权利要求1所述的发光装置，其特征在于荧光粉的材质选自于有机荧光粉、荧光颜料、无机荧光粉、放射性元素或其组合。
20.如权利要求1所述的发光装置，其特征在于光学胶的材质选自于有机高分子、无机高分子、有机聚合物、无机聚合物、金属化合物或其组合。
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