CN104103730A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN104103730A CN104103730A CN201410134682.5A CN201410134682A CN104103730A CN 104103730 A CN104103730 A CN 104103730A CN 201410134682 A CN201410134682 A CN 201410134682A CN 104103730 A CN104103730 A CN 104103730A
- Authority
- CN
- China
- Prior art keywords
- layer
- semiconductor layer
- type semiconductor
- semiconductor device
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 110
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 35
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-079659 | 2013-04-05 | ||
| JP2013079659A JP2014204000A (ja) | 2013-04-05 | 2013-04-05 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104103730A true CN104103730A (zh) | 2014-10-15 |
Family
ID=51671706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410134682.5A Pending CN104103730A (zh) | 2013-04-05 | 2014-04-04 | 半导体装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2014204000A (ja) |
| CN (1) | CN104103730A (ja) |
| TW (1) | TW201507204A (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI692373B (zh) * | 2015-01-26 | 2020-05-01 | 德商碧然德有限公司 | 用於液體處理系統的閥、閥致動裝置、芯和適配器 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63128676A (ja) * | 1986-11-18 | 1988-06-01 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
| CN1638155A (zh) * | 2003-12-22 | 2005-07-13 | 三星电子株式会社 | 上发射氮化物基发光装置及其制造方法 |
| CN102185074A (zh) * | 2011-04-07 | 2011-09-14 | 上海大学 | Ag/氧化锌基复合透明电极的发光二极管及其制备方法 |
| US20110248240A1 (en) * | 2004-08-10 | 2011-10-13 | Samsung Electro-Mechanics Co., Ltd. | Gallium nitride based semiconductor light emitting diode |
-
2013
- 2013-04-05 JP JP2013079659A patent/JP2014204000A/ja active Pending
-
2014
- 2014-03-27 TW TW103111477A patent/TW201507204A/zh unknown
- 2014-04-04 CN CN201410134682.5A patent/CN104103730A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63128676A (ja) * | 1986-11-18 | 1988-06-01 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
| CN1638155A (zh) * | 2003-12-22 | 2005-07-13 | 三星电子株式会社 | 上发射氮化物基发光装置及其制造方法 |
| US20110248240A1 (en) * | 2004-08-10 | 2011-10-13 | Samsung Electro-Mechanics Co., Ltd. | Gallium nitride based semiconductor light emitting diode |
| CN102185074A (zh) * | 2011-04-07 | 2011-09-14 | 上海大学 | Ag/氧化锌基复合透明电极的发光二极管及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014204000A (ja) | 2014-10-27 |
| TW201507204A (zh) | 2015-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201703293A (zh) | 發光元件 | |
| CN102637782A (zh) | 一种提高光提取效率发光二极管的制作方法 | |
| CN102832299A (zh) | 一种层状透明导电层led芯片的制备方法 | |
| TW201503326A (zh) | 具有觸控功能的發光顯示器 | |
| Park et al. | Sputter deposition of Sn-doped ZnO/Ag/Sn-doped ZnO transparent contact layer for GaN LED applications | |
| JP6340674B2 (ja) | 有機発光素子用の光取出し基板、その製造方法、及びこれを含む有機発光素子 | |
| KR101030823B1 (ko) | 투명 박막, 이를 포함하는 발광 소자와 이들의 제조 방법 | |
| US6818467B2 (en) | P-type ohmic electrode in gallium nitride based optical device and fabrication method thereof | |
| CN103098240B (zh) | 具有MgO角锥结构的发光装置及其制造方法 | |
| TWI441354B (zh) | 發光二極體晶粒及其製造方法 | |
| CN104103730A (zh) | 半导体装置 | |
| US20130341591A1 (en) | Light emitting diode structure and manufacturing method thereof | |
| JP6532237B2 (ja) | 成膜方法及び発光ダイオードの製造方法 | |
| CN103165780A (zh) | 提高亮度的GaN基LED芯片的制作方法 | |
| CN102683521B (zh) | 发光二极管的制造方法 | |
| Singh et al. | Effects on electrical and optical properties of InGaN/GaN MQWs light-emitting diodes using Ni/ITO transparent p-contacts on p-GaN | |
| JP2014183090A (ja) | 透明電極構造、窒化物半導体発光ダイオード、及び透明電極成膜方法 | |
| CN103518266B (zh) | Ⅲ族氮化物半导体发光元件 | |
| Singh et al. | InGaN/GaN Multiple Quantum Well Blue Light Emitting Diodes with Transparent Ni/ITO and Pt/ITO p-Type Contacts | |
| CN104332547B (zh) | 一种led芯片 | |
| US20150093500A1 (en) | Corrosion-Resistant Silver Coatings with Improved Adhesion to III-V Materials | |
| Kim et al. | InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes | |
| US9391232B1 (en) | Variable composition transparent conductive oxide layer and methods of forming thereof | |
| TWI485880B (zh) | 發光二極體晶片及其製作方法 | |
| Wang et al. | Effects of annealing treatment on optical and electronic properties of GaN based LEDs with ITO films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141015 |