CN104103710A - 湿式连续生产软体铜铟镓硒薄膜太阳能电池组件的制备方法 - Google Patents
湿式连续生产软体铜铟镓硒薄膜太阳能电池组件的制备方法 Download PDFInfo
- Publication number
- CN104103710A CN104103710A CN201310120518.4A CN201310120518A CN104103710A CN 104103710 A CN104103710 A CN 104103710A CN 201310120518 A CN201310120518 A CN 201310120518A CN 104103710 A CN104103710 A CN 104103710A
- Authority
- CN
- China
- Prior art keywords
- film
- chamber
- preparation
- pen
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 238000010924 continuous production Methods 0.000 title abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 12
- 239000010439 graphite Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 12
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- 239000007788 liquid Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 82
- 229910052711 selenium Inorganic materials 0.000 claims description 24
- 239000011669 selenium Substances 0.000 claims description 24
- 235000008216 herbs Nutrition 0.000 claims description 12
- 210000002268 wool Anatomy 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000002425 crystallisation Methods 0.000 claims description 11
- 238000003698 laser cutting Methods 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 230000008025 crystallization Effects 0.000 claims description 7
- 239000002002 slurry Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000007731 hot pressing Methods 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000004568 cement Substances 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000011888 foil Substances 0.000 claims description 4
- 238000005087 graphitization Methods 0.000 claims description 4
- 230000036571 hydration Effects 0.000 claims description 4
- 238000006703 hydration reaction Methods 0.000 claims description 4
- 239000002105 nanoparticle Substances 0.000 claims description 4
- 239000011858 nanopowder Substances 0.000 claims description 4
- 238000010926 purge Methods 0.000 claims description 4
- 238000007788 roughening Methods 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- 238000001291 vacuum drying Methods 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 3
- 231100000614 poison Toxicity 0.000 claims 1
- 230000007096 poisonous effect Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 229910052793 cadmium Inorganic materials 0.000 abstract description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 231100000331 toxic Toxicity 0.000 abstract 1
- 230000002588 toxic effect Effects 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 231100000004 severe toxicity Toxicity 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
一种“湿式连续生产软体铜铟镓硒薄膜太阳能电池组件”的制备方法,其特征在于:它是依次在软体衬底带材(2),上喷塗纳米石墨碳液浆制备为下电极膜,喷塗CIGS纳米液浆制备吸收膜并用InS或ZnS材料替代CdS制备缓冲层并滅掉了硒化工段。从而避免了连续生产软体铜铟镓硒薄膜太阳能电池组件系统能耗量较大,制造四元靶材难度大,镀膜硒化后造成结晶之均匀度难以控制,硒化过程成本高、时间长又剧毒、缓冲层CdS含镉,环境污染问题等的币端。实现了系统制造耗能量低,备制工艺简单,去消了镉,硒化污染环境源,提高了转化率,降低了生产成本的目的。
Description
技术领域;
本发明涉及一种“湿式连续生产软体铜铟镓硒薄膜太阳能电池组件”的制备技术,特别是制备石墨碳膜为下电极,喷塗纳米铜铟镓硒四元素液浆制吸收膜的制备铜铟镓硒CuInGaSe2簿膜太阳能电池技术。
背景技术;
现有的“连续生产软体铜铟镓硒薄膜太阳能电池组件”的制备技术,业内人士所称的“卷对卷”“连续生产软体铜铟镓硒薄膜太阳能电池组件”的方法;是在软体带材衬底材料上用真空磁控溅射法溅镀鉬MO膜为下电极,再用铜铟镓硒四元素靶材溅射铜铟镓硒CIGS吸收膜后进入硒化室硒化结晶。依次在此膜层面上溅射缓冲层CdS簿膜再溅射透明导电膜TCO,敷设金属絲网电极,再铺设透明保护膜EVA并密封热压后即完成软体铜铟镓硒薄膜太阳能电池组件的制备工作。
现有技术的缺陷为;
1,系统制备工装全采用真空磁控溅射设备,能耗量较大。
2,采用Cu,In,Ga,Se四元素靶材溅射CIGS吸收膜,其之四元素熔点、沸点不同温度高低差很大,制造靶材难度大,镀膜硒化后造成结晶之均匀度难以控制。
3,硒化过程成本太贵、时间久又剧毒、缓冲层CdS含镉难以通过环评等影响环境污染问题。
因钼MO为下电极及其接触层电阻较大所以造成转化率较低。。
发明内容;
本发明的目的是;克服真空磁控溅射法溅射下电极钼MO膜和四元素靶材溅射CIGS吸收膜层及替代缓冲层CdS材料,去消硒化工艺等软体铜铟镓硒薄膜太阳能电池组件的缺点。提供一种湿式连续生产软体铜铟镓硒薄膜太阳能电池组件的制备方法;
本发明;采用喷塗纳米液浆制备石墨碳膜为下电极,喷塗CIGS纳米液浆制备吸收膜并用InS或ZnS材料替代CdS制备缓冲层并去掉了硒化工段。从而避免了连续生产软体铜铟镓硒薄膜太阳能电池组件系统能耗量较大,制造靶材难度大,镀膜硒化后造成结晶之均匀度难以控制,硒化过程成本高、时间久又剧毒、缓冲层CdS含镉难以通过环评,影响环境污染问题等的币端。实现了系统制造耗能量低,备制工艺简单,去消了镉元素,硒化污染环境源,提高了转化率,降低了生产成本的目的
本发明的技术方案是:
本发明;一种湿式连续生产软体铜铟镓硒薄膜太阳能电池组件的制备方法它是依次在不锈钢箔,或特制塑胶及适用的软体带材为衬底上均匀制绒打毛后喷塗由纳米石墨碳粉和空化水合成的适度液浆,制备为均厚度的膜层,烘干固化为固体石墨下电极导电膜。再按设定位置横向用激光第一次切割微缝为条状,切割深度至软体带材的上表面层。其目的是将下电极切断,分割成设定的单元段。然后再均匀喷塗按配方配制的Cu,In,Ga,Se四元素纳米粉和空化水搅拌均匀合成的适度液浆,制备为均厚度的膜层再进入烘干和热处理结晶工段,使其膜在设定温度和时间内改变其内部金相组织为坚硬固体结晶态的铜铟镓硒CuInGaSe2薄膜。相继在其上表面,采用濺射法濺射InS或ZnS缓冲层膜。然后向后移动设定的位置和第一次切割微缝平行方向,用激光第二次切割微缝为条状,其目的是将铜铟镓硒CuInGaSe2薄膜和InS或ZnS缓冲层膜切断,深度到下电极上表面为止。再采用石磁控濺射法濺射i-Zno异质结窗口层膜,再采用用磁控濺射法濺射A-Zno透明导电上电极膜层并在其上电极膜层微缝上表面制设导电金属柵极,相继再铺设并真空热压EVA透明保护膜。再向后移动设定的位置和第二次切割微缝平行方向,用激光第三次切割微缝为条状,其目的是将A-Zno透明导电上电极膜,EVA透明保护膜,InS或ZnS缓冲层和膜铜铟镓硒CuInGaSe2薄膜切断,深度到下电极上表面为止。
超声波焊接金属网线,串联或并联接成适用电压后用导线引出即完成了软体铜铟镓硒薄膜太阳能电池组件制备程序。
附图说明:
图“1”为本发明“湿式连续生产软体铜铟镓硒薄膜太阳能电池组件的制备方法”工况示意图;
图中:1,前置涨力卷绕机 2,软体衬底带材 3-14,窄缝阀
4,清洗水处理装置 5,超声波清洗机 6,清洗室
7,衬底制绒打毛装置 8,制绒打毛烘干室 9,制备石墨碳膜室
10,纳米碳浆喷塗装置 11,烘干石墨化室 12,激光切割装置
13,喷塗CIGS膜真空室 14,纳米CIGS膜喷塗装置
15,真空烘干室 16,热处理结晶室
17,冷却室 18,InS或ZnS靶材溅射装置
19,磁控溅射真空室 20,激光切割装置
21,溅射i-Zno异质结窗口层膜装置 22,磁控溅射真空室
23溅射A-Zno透明导电膜靶材溅射装置 24,溅射真空室
25,金属柵极 26,激光切割装置
27,真空热压EVA透明保护膜 28,超声波焊接金属网线装置
29,整理装置 30,软体铜铟镓硒薄膜太阳能电池组件
31,后置涨力卷绕机
参照附图具体实施方式;
本发明;一种湿式连续生产软体铜铟镓硒薄膜太阳能电池组件的制备方法;它是卷绕在前置涨力卷绕机1,上面的不锈钢箔,或特制塑胶及适用的软体带材2,在清洗室6,经超声波清洗机5,清洗干净油污后进入制绒打毛烘干室8,由衬底制绒打毛装置7,在软体带材衬底上均匀制绒打毛后进入制备石墨碳膜室9,由纳米碳浆喷塗装置10,喷塗由纳米石墨碳粉和空化水合成的适度液浆,制备为均厚度的膜层,进入烘干石墨化室11,烘干固化为固体下电极导电膜。应用激光切割装置12,按设定位置横向第一次切割微缝为条状,切割深度至软体带材2,的上表面层,其目的是将下电极切断,分割成设定的单元段。连续再进入喷塗CIGS膜真空室13,由纳米CIGS膜喷塗装置14,均匀喷塗按配方配制的Cu,In,Ga,Se四元素纳米粉和空化水搅拌均匀合成的适度液浆,制备为均厚度的膜层再进入真空烘干室15,进行排水烘干后进入热处理结晶室16,在设定的温度气氛下进行热处理结晶工况,使其膜在设定温度和时间内改变其内部金相组织为坚硬固体结晶态的铜铟镓硒CuInGaSe2薄膜。再进入冷却室17,冷却止200度以下,进入磁控溅射真空室19,由InS或ZnS靶材溅射装置18,在其上表面,采用濺射法濺射缓冲层膜。然后向后移动设定的位置和第一次切割微缝平行方向,用激光切割装置20,第二次切割微缝为条状,其目的是将铜铟镓硒CuInGaSe2薄膜和InS或Zn S缓冲层膜切断,深度至下电极上表面为止。相继进入溅射真空室22,应用溅射i-Zno异质结窗口层膜装置21,采用磁控濺射法濺射i-Zno异质结层,再进入溅射真空室24,用溅射A-Zno透明导电膜靶材溅射装置23,制备透明导电上电极膜层并在其上电极膜层微缝上表面,印刷导电金属柵极25,后,再铺设并真空热压EVA透明保护膜27,。继续向后移动设定的位置和第二次切割微缝平行方向,用激光切割装置26,,第三次切割微缝为条状,其目的是将EVA透明保护膜,A-Zno透明导电上电极膜,InS或ZnS缓冲层和膜铜铟镓硒CuInGaSe2薄膜切断,深度到下电极上表面为止。再用,超声波焊接金属网线装置28焊接金属网线,正理装置29,串联或并联接成适用电压后用导线引出即完成了成品软体铜铟镓硒薄膜太阳能电池组件30制备程序。成品带卷用后置涨力卷绕机31,卷成卷材。然后根据需要裁剪为段供发电用。
软体铜铟镓硒带材从开始连续通过每个工况工作室全由窄缝阀3-14,隔离密封,工况工作室内抽真空充氮气防氧化。
Claims (4)
1.一种湿式连续生产软体铜铟镓硒薄膜太阳能电池组件的制备方法;其特征在于;它是卷绕在前置涨力卷绕机1,上面的不锈钢箔,或特制塑胶及适用的软体带材2,在清洗室6,经超声波清洗机5,清洗干净油污后进入制绒打毛烘干室8,由衬底制绒打毛装置7,在软体带材衬底上均匀制绒打毛后进入制备石墨碳膜室9,由纳米碳浆喷塗装置10,喷塗由纳米石墨碳粉和空化水合成的适度液浆,制备为均厚度的膜层,进入烘干石墨化室11,烘干固化为固体下电极导电膜;应用激光切割装置12,按设定位置横向第一次切割微缝为条状,切割深度至软体带材2,的上表面层,其目的是将下电极切断,分割成设定的单元段;连续再进入喷塗CIGS膜真空室13,由纳米CIGS膜喷塗装置14,均匀喷塗按配方配制的Cu,In,Ga,Se四元素纳米粉和空化水搅拌均匀合成的适度液浆,制备为均厚度的膜层再进入真空烘干室15,进行排水烘干后进入热处理结晶室16,在设定的温度气氛下进行热处理结晶工况,使其膜在设定温度和时间内改变其内部金相组织为坚硬固体结晶态的铜铟镓硒CuInGaSe2薄膜;再进入冷却室17,冷却止200度以下,进入磁控溅射真空室19,由InS或ZnS靶材溅射装置18,在其上表面,采用濺射法濺射缓冲层膜;然后向后移动设定的位置和第一次切割微缝平行方向,用激光切割装置20,第二次切割微缝为条状,其目的是将铜铟镓硒CuInGaSe2薄膜和InS或Zn S缓冲层膜切断,深度至下电极上表面为止;相继进入溅射真空室22,应用溅射i-Zno异质结窗口层膜装置21,采用磁控濺射法濺射i-Zno异质结层,再进入溅射真空室24,用溅射A-Zno透明导电膜靶材溅射 装置23,制备透明导电上电极膜层并在其上电极膜层微缝上表面,印刷导电金属柵极25,后,再铺设并真空热压EVA透明保护膜27,;继续向后移动设定的位的位置和第二次切割微缝平行方向,用激光切割装置26,,第三次切割微缝为条状,其目的是将EVA透明保护膜,A-Zno透明导电上电极膜,InS或ZnS缓冲层和膜铜铟镓硒CuInGaSe2薄膜切断,深度到下电极上表面为止;再用,超声波焊接金属网线装置28焊接金属网线,正理装置29,串联或并联接成适用电压后用导线引出即完成了成品软体铜铟镓硒薄膜太阳能电池组件30制备程序;成品带卷用后置涨力卷绕机31,卷成卷材的制备方法。
2.根椐权利要求1,所述的一种湿式连续生产软体铜铟镓硒薄膜太阳能电池组件的制备方法其特征在于;不锈钢箔或特制塑胶及适用的软体带材2,在清洗室6,经超声波清洗机5,清洗干净油污后进入制绒打毛烘干室8,由衬底制绒打毛装置7,在软体带材衬底上均匀制绒打毛后进入制备石墨碳膜室9,由纳米碳浆喷塗装置10,喷塗由纳米石墨碳粉和空化水合成的适度液浆,制备为均厚度的膜层,进入烘干石墨化室11,烘干固化为下电极导电膜的制备方法。
3.根椐权利要求1,所述的一种湿式连续生产软体铜铟镓硒薄膜太阳能电池组件的制备方法其特征在于;己固化为下电极导电膜的带材,连续再进入喷塗CIGS膜真空室13,由纳米CIGS膜喷塗装置14,均匀喷塗按配方配制的Cu,In,Ga,Se四元素纳米粉和空化水搅拌均匀合成的适度液浆,制备为圴厚度的膜层再进入真空烘干室15,进行排水烘干后进入热处理结晶室16,在设定的温度气氛 下进行热处理结晶工况,使其膜在设定温度和时间内改变其内部金相组织为结晶态的铜铟镓硒CuInGaSe2薄膜的制备方法。
4.根椐权利要求1,所述的一种湿式连续生产软体铜铟镓硒薄膜太阳能电池组件的制备方法其特征在于;结晶态的铜铟镓硒薄膜进入磁控溅射真空室19,由InS或ZnS靶材溅射装置18,在其上表面,采用濺射法濺射缓冲层膜以替代有毒的CdS。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310120518.4A CN104103710A (zh) | 2013-04-09 | 2013-04-09 | 湿式连续生产软体铜铟镓硒薄膜太阳能电池组件的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310120518.4A CN104103710A (zh) | 2013-04-09 | 2013-04-09 | 湿式连续生产软体铜铟镓硒薄膜太阳能电池组件的制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104103710A true CN104103710A (zh) | 2014-10-15 |
Family
ID=51671688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310120518.4A Pending CN104103710A (zh) | 2013-04-09 | 2013-04-09 | 湿式连续生产软体铜铟镓硒薄膜太阳能电池组件的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104103710A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104362222A (zh) * | 2014-11-28 | 2015-02-18 | 中南大学 | 一种基于光化学沉积制备铜铟镓硒薄膜的方法 |
CN109877454A (zh) * | 2019-04-11 | 2019-06-14 | 武汉华工激光工程有限责任公司 | 薄膜太阳能电池电极的激光焊接方法 |
-
2013
- 2013-04-09 CN CN201310120518.4A patent/CN104103710A/zh active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104362222A (zh) * | 2014-11-28 | 2015-02-18 | 中南大学 | 一种基于光化学沉积制备铜铟镓硒薄膜的方法 |
CN104362222B (zh) * | 2014-11-28 | 2016-08-24 | 中南大学 | 一种基于光化学沉积制备铜铟镓硒薄膜的方法 |
CN109877454A (zh) * | 2019-04-11 | 2019-06-14 | 武汉华工激光工程有限责任公司 | 薄膜太阳能电池电极的激光焊接方法 |
CN109877454B (zh) * | 2019-04-11 | 2021-02-09 | 武汉华工激光工程有限责任公司 | 薄膜太阳能电池电极的激光焊接方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104150476B (zh) | 化学气相沉积法制备石墨烯的无损伤转移方法 | |
JP5398003B2 (ja) | 太陽電池の吸収層に酸化物層を堆積させる方法、および太陽電池の生産方法 | |
CN103993261B (zh) | 一种光栅结构透明导电薄膜的制备方法 | |
DE102012108901A1 (de) | Verfahren und System zum Herstellen von Chalcogenid-Halbleitermaterialien unter Verwendung von Sputter- und Verdampfungsfunktionen | |
CN103165748A (zh) | 一种制备铜锌锡硫太阳能电池吸收层薄膜的方法 | |
KR20130098143A (ko) | Cigs 태양 전지 제조를 위한 통합적 방법 | |
CN104103710A (zh) | 湿式连续生产软体铜铟镓硒薄膜太阳能电池组件的制备方法 | |
JP2014502038A5 (zh) | ||
CN105304763A (zh) | 全真空法制备铜锌锡硫薄膜太阳电池的方法 | |
CN105047696B (zh) | 一种p型导电薄膜NbxW1‑xS2及制备方法 | |
US20180006173A1 (en) | Technique for Achieving Large-Grain Ag2ZnSn(S,Se)4 Thin Films | |
Gułkowski et al. | Experimental studies of thin films deposition by magnetron sputtering method for CIGS solar cell fabrication | |
KR102042656B1 (ko) | 균일한 조성의 광흡수층을 포함하는 czts 박막 태양전지 및 그의 제조방법 | |
CN104152861A (zh) | 一种外加磁场辅助激光制备透明导电薄膜的方法 | |
Krawczak et al. | Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications | |
CN103864027B (zh) | 一种制备碲化亚铜薄膜的方法 | |
CN103730540B (zh) | 一种使用脉冲激光法制备AlSb薄膜太阳电池的方法 | |
CN103147061B (zh) | 一种制备非晶态透明氧化锌薄膜的方法 | |
CN105543795A (zh) | 一种多晶碳化硅薄膜的生长方法 | |
JP2017059657A (ja) | 光電変換素子および太陽電池 | |
CN105428212A (zh) | 单靶溅射制备铜锌锡硒薄膜吸收层的方法 | |
CN105489699A (zh) | 用于太阳能薄膜电池前电极的AZO/Ag/AZO复合膜的制备方法 | |
Ma et al. | A novel method to prepare ZnO/Ni multilayer thin film used in back electrode for solar cell | |
CN104810249B (zh) | CdTe薄膜上生长CdS薄膜或CdS纳米结构的方法 | |
CN105762225B (zh) | 硅异质结太阳能电池的退火、制备方法和电池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141015 |