CN104103618A - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN104103618A
CN104103618A CN201410136424.0A CN201410136424A CN104103618A CN 104103618 A CN104103618 A CN 104103618A CN 201410136424 A CN201410136424 A CN 201410136424A CN 104103618 A CN104103618 A CN 104103618A
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inductor
semiconductor device
lead frame
present
addition
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CN104103618B (zh
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冈部康宽
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Sanken Electric Co Ltd
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Sanken Electric Co Ltd
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Abstract

本发明的目的在于提供半导体装置，其抑制了在电感器中产生的辐射噪声的增加。该半导体装置（10）具有引线框架（RM）；搭载于引线框架（RM）的主面侧（MF）的MIC（18）；以紧贴的方式搭载于引线框架（RM）的背面侧（BF）的电感器（12）；以及对引线框架（RM）、MIC（18）以及电感器（12）进行树脂密封的树脂体（14）。电感器（12）是强磁性体的八棱柱状芯，在与电感器（12）的轴（P）对应的位置配置MIC（18），在电感器（12）的端子（B、C）之间配置流过MIC（18）的主电流的配线。

Description

半导体装置
技术领域
本发明涉及具有电感器的半导体装置。
背景技术
公知有如下半导体装置：作为将电源电压转换为规定的动作电压的电力转换装置具有DC-DC转换器。关于这种半导体装置，一般公知有在框架的主面侧搭载有电感器（线圈）、IC芯片以及电容器的小型薄型的SON型半导体装置（例如参照专利文献1）。
专利文献1：日本特开2007-318954号公报
但是，在这种以往的半导体装置中，由于电感器和IC芯片（以下，简称为IC）为大致相同的大小并进行了层压，因此电感器被设置成相比于框架安装在半空，因此存在电感器中产生的电磁场到达框架的距离，有可能导致漏磁通增加，甚至是辐射噪声增加。
发明内容
本发明是鉴于上述问题而完成的，其目的在于，提供通过在电感器中产生的电磁场来抑制了辐射噪声的增加的半导体装置。
为了解决上述问题，本发明的半导体装置的特征在于，该半导体装置具有：引线框架；IC元件，其搭载于所述引线框架的主面侧；电感器，其以紧贴的方式搭载于所述引线框架的背面侧；以及树脂体，其对所述引线框架、所述IC元件以及所述电感器进行树脂密封，所述电感器与所述引线框架紧贴，所述电感器是强磁性体的八棱柱状芯或圆柱状芯，在与所述电感器的轴对应的位置配置所述IC元件，所述电感器与所述IC元件电连接，在所述电感器的端子之间配置有流过所述IC元件的主电流的配线。
根据本发明，能够提供电感器与框架之间没有距离并抑制了在电感器中产生的辐射噪声的增加的半导体装置。
附图说明
图1的（a）～（c）是分别说明本发明一个实施方式的半导体装置的内部结构的主视图、侧视图和后视图。
图2的（a）和（b）是说明本发明的本实施方式的外观结构的半导体装置的主视图和侧视图。
图3是示出本实施方式的半导体装置的一个实施方式中、在MIC中设置了开关元件的例子的电路图。
图4是说明本实施方式的半导体装置的内部配线的配置的图。
图5是详细说明流过本实施方式的半导体装置的内部的电流路径的图。
图6是对本实施方式的半导体装置与有关现有技术方式的半导体装置的辐射噪声数据进行了比较的测定数据。
标号说明
10：半导体装置；12：电感器；12i：内周侧；12m：主体；14：树脂体；18：MIC（IC元件）；20：基板；22a～22c：电容器；P：轴（中心轴）；RM：引线框架。
具体实施方式
下面，参照附图对本发明的实施方式进行说明。图1的（a）～（c）是分别说明本发明一个实施方式（以下，称为本实施方式）的半导体装置的内部结构的主视图、侧视图和后视图。图2的（a）和（b）是说明本实施方式的外观结构的半导体装置的主视图和侧视图。
本实施方式的半导体装置10是SIP型树脂密封半导体装置，是电感器内置型模块（电感器内置型调节器）。
半导体装置10由引线框架RM、作为电子部件而搭载于引线框架RM的主面侧MF（表面侧）的电路元件D、搭载于引线框架RM的背面侧BF的电感器（线圈）12以及对电路元件D和电感器12进行树脂密封的树脂体14构成。另外，还可以具有散热板15，该散热板15螺钉紧固在背面侧BF的树脂体14的外壁上，使在装置内部产生的热向装置外方散热。
引线框架RM为铜或铜合金等金属制。在本实施方式中，引线框架RM主要由被分割而彼此不连续的三个分割框架16p～16r构成。即，分割框架彼此电绝缘。
如图1的（a）所示，从正面侧观察半导体装置10时，分割框架16p、16q配置在左右位置，分割框架16r配置在中央位置。
另外，在本实施方式中，作为电路元件D，搭载有MIC（单片集成电路）18、基板（有机基板）20p、芯片电容器22a～22c。在本实施方式中，引线框架RM的电导率比MIC18的电导率大。
MIC18搭载于分割框架16r上。芯片电容器22a横跨安装在分割框架16p、16r上，芯片电容器22b横跨安装在分割框架16q、16r上。
基板20p配置在分割框架16p上。并且，芯片电容器22c安装在基板20p上。
在本实施方式中，电感器12是强磁性体的壶形芯。并且，在与电感器12的轴（中心轴）P对应的位置配置有MIC18。与电感器12的轴P对应的位置是指，电感器12的轴P的附近且很难受到在电感器12中产生的电磁场的影响的位置。在本实施方式中，作为对应的位置，设为从电感器12的中心轴方向观察时电感器12的主体12m（线圈状的电流通过部）的内周侧12i的位置。
基板20p配置在分割框架16p上。并且，芯片电容器22c安装在基板20p上。
并且，如图1的（b）和（c）所示，在电感器12的安装面侧的两边侧形成有电连接面12p、12q，以该电连接面12p、12q分别与分割框架16p、16q面接触的方式，将电感器12安装在引线框架RM的背面侧BF。而且，配置成主面侧MF的MIC18与背面侧BF的电感器12夹持引线框架RM。在本实施方式中，电感器12为多棱柱状（例如图1（c）所示的八棱柱状），但是也可以是圆柱状。
当在分割框架16上配置电路元件D和基板20时，关于基板20，利用粘接剂使其粘接在分割框架16上而固定在分割框架16上，而关于电路元件D和电感器12，在安装时，通过涂布银浆并使其热硬化或者进行回流焊等焊接，以紧贴的方式将它们固定在分割框架16上。
另外，半导体装置10具有从树脂体14延伸出的多条外接引线ER。并且，树脂体14由模具树脂等形成，以对MIC18、基板20、芯片电容器22a～22c以及分割框架16的外接引线以外的部分进行树脂密封。在树脂体14中的半导体装置上部（与外接引线ER的延伸侧相反侧的部分）形成有可供螺钉贯穿插入的贯通孔14h。另外，分割框架16p、16q的半导体装置上部配置成不露出到该贯通孔14h的形状。
另外，散热板15具有形成有螺钉卡合孔15h（内螺纹，参照图2（b））且与树脂体14的外壁抵接的平板状的散热基板15b、和以竖立设置在散热基板15b上的方式排列的多个散热片15f，该散热板15是在制造半导体装置10之前预先制造的。散热板15的材质例如为铜或铝。
这里，在树脂体14中的形成引线框架RM的主面侧的树脂体部分14p中，从电子部件到树脂体表面14f的距离（树脂体的厚度）最小的是从配置在基板20p上的芯片电容器22c到树脂体表面14f的距离（厚度）LF（例如0.4mm）。并且，与该距离（厚度）LF相比，从电感器12的表面12s到树脂体背面14b的距离LB（例如0.75mm）较大。并且，距离LB为规定距离（规定厚度）以下。这里，规定距离是指不会妨碍将在电感器12中产生的热传递到形成引线框架RM的背面侧的树脂体部分14q而进行散热的距离（厚度），由电感器12的发热量、厚度等确定。
图3是示出本实施方式的半导体装置的一个实施方式中、在MIC18中设置了开关元件的例子的电路图。另外，图4是说明本实施方式的半导体装置的内部配线的配置的图。另外，图5是详细说明流过本实施方式的半导体装置的内部的电流路径的图。
这里，图3所示的电路图的端子A、B、C、AG、PG表示与图4和图5所示的配线端子相同的标号。端子A是输入端子，端子B、C是电感器12的端子，并且端子C兼作为输出端子。另外，端子AG、PG是接地端子。
图4所示的电感器12的端子B、C配置在引线框架RM的两侧的位置，MIC18的配线端子A、AG、PG配置在电感器12的端子B、C的内侧。
这使得通过接通位于图3所示的MIC18的A～B之间的开关元件而从电源E经由电感器12～电容器C4以及负载RL流过电流的电流路径1、以及通过断开位于MIC18的A～B之间的开关元件且互补地接通位于MIC18的B～PG之间的开关元件而流过电流的电流路径2的回路最短。这里，在图5中，利用点划线示出电流路径1，利用双点划线示出电流路径2，利用实线示出电流路径1与电流路径2合流而流过的路径。根据图5所示的电流路径可知，能够使流过半导体装置内部的电流路径非常短且能够减小路径的面积。
图6是对本实施方式的半导体装置与有关现有技术方式的半导体装置的辐射噪声数据进行了比较的测定数据。图6的（A）是本实施方式的半导体装置的数据，图6的（B）是有关现有技术方式的半导体装置的数据。可知，在频率30MHz～200MHz时，本实施方式的半导体装置的辐射噪声的峰值被抑制了10dB以上。
这具有如下效果：本实施方式的半导体装置的电感器与框架之间没有距离，并且使流过半导体装置内部的电流路径非常短且减小了路径的面积。
另外，在本实施方式中，从电感器12的中心轴方向观察时，在电感器12的主体12m的内周侧12i的位置配置MIC18。因此，即使电感器12为强磁性体的壶形芯，MIC18也很难受到在电感器12中产生的电磁场的影响。
另外，引线框架RM的电导率比MIC18的电导率大。由此，能够进一步抑制在电感器12中产生的电磁场对MIC18造成影响。
另外，在形成引线框架RM的分割框架16p～16r的主面侧MF搭载有电路元件D，在分割框架16p～16r的主面侧MF的相反面侧、即背面侧BF以紧贴的方式搭载有电感器12，有效利用可安装的空间。因此，与仅在主面侧MF安装电路元件D和电感器12的情况相比，能够大幅减小引线框架RM（分割框架16p～16r）的面积。由此，能够成为抑制了厚度尺寸（高度尺寸）且大幅减小了平面尺寸的半导体装置10，并且能够使流过半导体装置内部的电流路径非常短且能够减小路径的面积。
另外，电感器12的外形为六边形以上的多棱柱状（在图1（c）中，作为一例为八棱柱状），通过采用这种倒角形状，注入到模具内的树脂容易在电感器12的周围流动。另外，在电感器12的外形为圆柱状时，树脂也同样容易在电感器12的周围流动。
另外，半导体装置10通过在主面侧MF搭载MIC18、在背面侧BF搭载电感器12，从而成为耐受螺纹紧固等机械应力的构造。
另外，引线框架RM由彼此分割的多个（三个）分割框架16构成。因此，分割框架彼此绝缘，所以能够将电路元件D（MIC18、基板20p、芯片电容器22a、22b）和电感器12直接安装在分割框架16上。因此，与以往相比，能够增大电感器12的通电量，所以作为电感器12，与以往相比能够使用容量较大的电感器。另外，能够将从电路元件D和电感器12产生的热直接传递到金属制的分割框架16，因此能够成为散热特性优良的半导体装置10。
另外，根据图2的（a）可知，在本实施方式中，分割框架16p～16r的形状相对于中心线C大致呈线对称。由此，能够成为具有容易抑制由于热应力产生的内部变形的结构的半导体装置10。
另外，具有散热片15f的散热板15设置在引线框架RM的背面侧BF的树脂体14的外壁上，在电感器12的表面（上表面），热经由散热板15与电感器12之间的树脂层而从散热板15消散，而在电感器12的背面（下表面），热从引线框架RM的外部引线（引线端子）ER向外部消散，成为使热高效地从电感器12的两面侧消散的结构。由此，半导体装置10的向装置外方进行散热的特性进一步提高，能够使半导体装置10以更高功率工作。
另外，在本实施方式中，作为IC元件，以MIC18为例进行了说明，但是其他IC元件也能够发挥同样的效果。
另外，如图4所示，也可以构成为，在MIC18中内置开关元件，使搭载有该开关元件的引线框架RM的接头部与GND（ground：接地）或+Vcc电源电压连接。由此，由于引线框架RM的电位成为稳定的电位，因此能够成为在MIC18中更难产生噪声的结构。另外，能够大幅抑制由于MIC自身的开关噪声而导致的MIC18的误动作、伴随开关而泄漏的电感器12的电磁场的影响，因此能够进行稳定的开关控制。
另外，电感器12可以是绕组型也可以是层压型，可以想到利用模制磁芯（dustcore）进行冲压成型而得到的电感器、利用鼓形芯（drum core）制作的开磁路构造的电感器、在周围包覆圆筒形芯的闭磁路构造的电感器等各种类型的电感器。
另外，在本实施方式中，说明了引线框架RM由分割框架16p～16r构成的例子，但是也可以使引线框架RM为一个连续的框架，还能够成为在表面侧配置了电路元件D且在背面侧BF配置了电感器12的半导体装置。在该情况下，从防止短路的观点考虑，优选在绝缘性的基板上载置引线框架RM并使引线框架RM与基板背面侧绝缘，在未设置有引线框架RM的基板背面侧配置电感器12。
另外，在本实施方式中，作为电路元件D，举出了MIC18、基板20以及芯片电容器22，但是也可以构成为包含除此以外的其他元件（特别是发热量大的元件）。
另外，也可以在形成树脂体14时配置散热板15，对散热基板15b的抵接面侧（树脂体侧）的部位也一并进行树脂密封。由此，来自电感器12等被树脂密封的发热源的热高效地传递到散热基板15b，因此能够高效地从散热片15f进行散热。另外，散热板15可以设置在主面侧MF，而且也可以设置在主面侧MF、背面侧BF双方。
另外，优选树脂体14的主面侧MF的厚度为树脂体14的背面侧BF的厚度的1.7倍以下，由此，能够成为容易抑制在树脂体14内产生的热应力的结构。
以上说明了本发明的实施方式，但是上述实施方式是用于对本发明的技术思想进行具体化的例示，结构部件的材质、形状、构造、配置等并不限定于上述内容。本发明能够在不脱离主旨的范围内进行各种变更来实施。另外，附图是示意性的，应该留意到尺寸比等与现实不同。因此，应该参考以下的说明来判断具体的尺寸比等。另外，在附图彼此之间，当然也包含彼此的尺寸关系和比率不同的部分。
产业上的可利用性
如上所述，在本发明的半导体装置中，在与电感器的轴对应的位置处配置有上述IC元件，因此优选用作即使电感器为强磁性体的八棱柱状芯或圆柱状芯也能够抑制在电感器中产生的强辐射噪声的半导体装置。

Claims (4)

1.一种半导体装置，其特征在于，该半导体装置具有：
引线框架；
IC元件，其搭载于所述引线框架的主面侧；
电感器，其搭载于所述引线框架的背面侧；以及
树脂体，其对所述引线框架、所述IC元件以及所述电感器进行树脂密封，
所述电感器与所述引线框架紧贴，
所述电感器是强磁性体的八棱柱状芯或圆柱状芯，
在与所述电感器的轴对应的位置配置所述IC元件，
所述电感器与所述IC元件电连接，
在所述电感器的端子之间配置有流过所述IC元件的主电流的配线。
2.根据权利要求1所述的半导体装置，其特征在于，
从所述电感器的中心轴方向观察时，在所述电感器的主体的内周侧配置有所述IC元件。
3.根据权利要求1或2所述的半导体装置，其特征在于，
所述引线框架的电导率比所述IC元件的电导率大。
4.根据权利要求1～3中的任意一项所述的半导体装置，其特征在于，
所述IC元件具有开关元件，
使搭载有所述开关元件的所述引线框架的接头部与GND或+Vcc电源电压连接。
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