CN104099585A - Apparatus and method for preparing silicon thin film through combination of plasma-enhanced chemical vapor deposition, hot wire chemical vapor deposition and bias technology - Google Patents
Apparatus and method for preparing silicon thin film through combination of plasma-enhanced chemical vapor deposition, hot wire chemical vapor deposition and bias technology Download PDFInfo
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Abstract
The invention discloses an apparatus and a method for preparing a silicon thin film through combination of plasma-enhanced chemical vapor deposition, hot wire chemical vapor deposition and bias technology, belonging to the technical field of preparation of silicon thin films. According to the method, reaction gas is decomposed and the silicon thin film is deposited by combining hot wire chemical vapor deposition (HWCVD), plasma-enhanced chemical vapor deposition (PECVD) and bias technology (which is called as a combination method P-HWCVD for short), and regulation and control of the microstructure of the silicon thin film, silicon thin film preparation process and a deposition rate are realized by adjusting parameters like distance between pole plates, radio frequency power, silane concentration and hydrogen concentration. The combination method has a higher gas utilization rate compared with a single gas decomposition mode and enables a material prepared at an ultrahigh rate to have better quality compared with a single hot wire chemical vapor deposition method. Compared with a material prepared through single usage of the hot wire chemical vapor deposition method, the silicon thin film material prepared by using the combination method is more applicable to solar batteries.
Description
Technical field
The present invention relates to the preparing technical field of silicon film, be specifically related to a kind of plasma body-heated filament-bias voltage in conjunction with the device and method of preparing silicon film, the method is the method decomposition reaction gas combining with plasma body and heated filament, on planar substrate surface, prepare silicon film, use bias voltage to control the growth quality of silicon film simultaneously.
Background technology
HWCVD is a kind of CVD technology of maturation, and in the current preparation process that is widely used in silicon film material, HWCVD has the advantage that equipment is simple, decomposing gas efficiency is high.PECVD technology is widely used in the production process of silicon-film solar-cell, the silane concentration that RF growing nanocrystalline silicon need to be very low (being less than 2%), and growth velocity (is less than very slowly
).HWCVD sedimentation rate is fast, and gas effciency is high, but membrane quality is not as good as the method for PECVD.By the two combination, can realize than the higher gas effciency of the above-mentioned single a kind of decomposing gas mode of independent use, than single use hot wire process, at the material of preparation, there is better quality.
Bias techniques can be realized the control to silicon film quality in PECVD, growth velocity, degree of crystallization and the electrical properties that by polarity and the intensity of bias voltage, can control silicon film, the technology of using direct current, AC bias to control silicon film quality at PECVD has obtained research widely.In combining method, use bias voltage to realize the effect similar to using bias voltage in PECVD.
Summary of the invention
The object of the present invention is to provide a kind of plasma body-heated filament-bias voltage in conjunction with the device and method of preparing silicon film, the method is in chemical vapor deposition processes, to use heated filament (HWCVD), plasma body (PECVD) and bias voltage in conjunction with the method for decomposition reaction gas aggradation silicon film, hereinafter to be referred as combining method (P-HWCVD).The material that the silicon film material of preparing is prepared with single use hot wire process is compared and is more suitable for for solar cell.Meanwhile, use combining method (P-HWCVD), can realize than the above-mentioned single a kind of decomposing gas mode of independent use and have higher gas effciency, the material of preparing in superelevation speed than single use hot wire process (HWCVD) has better quality.
Technical solution of the present invention is as follows:
A kind of plasma body-heated filament-bias voltage is in conjunction with the device of preparing silicon film, comprise sample table, flat substrate, heated filament and the radio-frequency electrode (plasma electrode) that are arranged at vacuum cavity inside, and the radio-frequency power supply, grid bias power supply and the direct supply that are arranged at vacuum cavity outside; Wherein: described heated filament is arranged between sample table and radio-frequency electrode, described flat substrate is fixed on sample table surface; Described direct supply is used for heating described heated filament, and its two poles of the earth are connected with the two ends of described heated filament by heated filament electrode respectively; Described grid bias power supply for applying bias voltage between radio-frequency electrode (plasma electrode) and sample table, and grid bias power supply is connected with sample table; Described radio-frequency power supply (plasma electrical source) is for generation of plasma body, the spontaneous generation sheath layer electric field of outer region meeting of plasma body, sheath layer electric field causes ion bombardment by the charged species in accelerate plasma to substrate, and described radio-frequency power supply is connected with radio-frequency electrode.
Between described sample table and vacuum cavity, without electrically contacting, described radio-frequency electrode is 0.5～30cm to the distance between substrate, and preferably 4～20cm, is more preferably 4.5～15cm; Described heated filament is 1～8cm to the distance on sample table surface, is more preferably 2～5cm, preferably 2～3.5cm.
Described sample table is used electro-conductive material to make, and is generally metal, and its specific conductivity is 10
3～10
8between S/cm; The area on described sample table surface is 100～1.5 * 10
4cm
2, the area on radio-frequency electrode surface is greater than the surface area of sample table.
The surface of described sample table adopts upwards, downwards or the design of tilting, sample table surface and the interfacial angle that horizontal plane forms of inclined design are more than or equal to 30 °, substrate is fixed on sample table surface, at substrate surface, carry out the deposition of silicon film, to reduce the impact of plasma generation dust on film growth quality.
Described heated filament is one or more, described heated filament be shaped as linear, helical, netted, the curve or other shape that are fermat spiral; While being arranged in parallel, the spacing between adjacent heated filament is 1～10cm, is more preferably between 1～7cm, preferably between 2～5cm.
When the layout type of many heated filaments is when being arranged in parallel, described heated filament electrode is heated filament support; Described heated filament support comprises interconnective support I, support II and for the bracket of supporting bracket I, described support I and support II be arranged in parallel, and described heated filament is screwed in support I; In vacuum chamber, use with the magnetic rod of pick-and-place device and regain or emit heated filament support.
The material of described substrate is glass, silicon chip or polyimide; The material of described heated filament is graphite, wolfram varbide, tungsten nitride, tantalum carbide, tantalum nitride or metal, and the heated filament of metal material is the pure metal of tungsten, rhenium, tantalum, molybdenum, rhodium, platinum, titanium or iridium or is the alloy of above-mentioned pure metal.
Described radio-frequency power supply type is a kind of in RF, VHF and direct current, preferably uses RF power supply; Described grid bias power supply is direct supply, square-wave generator or sine-wave generator.
Utilize said apparatus to prepare the method for silicon film, the method is with H
2and SiH
4as reactant gases, reactant gases issues solution estranged in the acting in conjunction of plasma body and heated filament, and the charged species in the sheath layer electric field plasma of plasma body is accelerated, and substrate is caused to ion bombardment; The bias voltage applying can strengthen or weaken the bombardment intensity of ion pair film and regulate plasma body intermediate ion and electron energy; By the regulation and control to the form of the size of bias voltage, bias voltage, silane concentration, substrate and radio-frequency electrode spacing and/or radio frequency power, realize the control to the structure of prepared silicon film and quality.
In the method, sample table Heating temperature is stable between 100～350 ℃, SiH in vacuum cavity
4and H
2volume ratio be 0.5%-100%, regulate vacuum cavity internal pressure stable between 1～2000Pa, energising is heated to 1500～2200 ℃ to heated filament to open direct supply, opens plasma electrical source (radio-frequency power supply) and produces plasma body, controls radio frequency power density between 0.1～5.0W/cm
2between.
By regulating plasma electrode and sample surfaces spacing, can regulate and control the crystallization degree of silicon film; In plasma electrode and the immovable situation of sample table surface spacing, along with the reduction of plasma power density, silicon film crystallization degree reduces gradually.
Between plasma body and sample table, applying bias voltage is direct current or interchange; The scope that applies direct current (DC) bias between plasma body and sample table is-100V～100V, by controlling the polarity of bias voltage and the quality that intensity can be adjusted film; Between plasma body and sample table, apply AC bias, frequency is 20～20kHz, by controlling the frequency of bias voltage and quality that intensity can be adjusted film, reduce dust, optimizing the orientation of crystal grain and the size of crystal grain is controlled.
The principle of the invention is as follows:
Plasma source, heater supply and bias voltage control power supply are installed in existing hot-wire chemical gas-phase deposition device, and reactant gases issues solution estranged in the acting in conjunction of plasma body and heated filament.Combining method applying plasma can impel film that crystallization occurs effectively, different along with plasma electrode and sample surfaces spacing, and there is crystallization in various degree in silicon film.In same plasma electrode and sample table surface spacing situation, along with the reduction of plasma power, silicon film crystallization degree reduces gradually; Applying plasma power density of the present invention refers to the plasma power of unit surface substrate.
By bias voltage control power supply, strengthen or weaken the bombardment of ion pair film to improve deposition process and film quality, by electron energy in bias adjustment plasma body, can improve equally preparing the quality of silicon film simultaneously.The scope that applies direct current (DC) bias between plasma body and sample table is-100V～100V, by controlling the polarity of bias voltage and the quality that intensity can be adjusted film.Between plasma body and sample table, apply AC bias, frequency 20-20kHz, by controlling the frequency of bias voltage and quality that intensity can be adjusted film, reduce dust, optimizing the orientation of crystal grain and the size of crystal grain is controlled.
Advantage of the present invention and beneficial effect are as follows:
The present invention uses heated filament and plasma body in conjunction with the method for decomposition reaction gas aggradation silicon film in chemical vapor deposition processes, by apply bias voltage between plasma electrode and sample table, can realize the regulation and control to microstructure of silicon thin film (comprise and forming as hydrogen richness, H bonding mode, grain size, grain growing orientation, crystallization rate, orientation etc.), silicon film preparation process (as dust Control) and sedimentation rate simultaneously.In addition,, by using vertical or downward-sloping substrate arrangement, can effectively avoid dust pollution in deposition process.By using heater array, can realize and use combining method big area to prepare silicon film material in addition.
Accompanying drawing explanation
Fig. 1 is coupling apparatus schematic diagram of the present invention; In figure: the coupling apparatus schematic diagram (a) making progress for sample table surface; (b) be the prone coupling apparatus schematic diagram of sample table table.
Fig. 2 is for being used heated filament parallel array to prepare the coupling apparatus schematic diagram of bulk silicon film.
Fig. 3 is for being used heated filament parallel array to prepare the coupling apparatus schematic diagram of bulk silicon film.
Its A place enlarged view when Fig. 4 is the magnetic rod using in Fig. 3 device with pick-and-place device.
Fig. 5 is the magnetic rod structural representation with pick-and-place device.
Fig. 6 prepares the Raman result of silicon film sample while closing plasma body for use coupling apparatus under different plasma electrode height, show that silicon film is non-crystalline state.
Fig. 7 prepares the Raman result of silicon film sample while opening plasma body for use coupling apparatus under different plasma electrode height, show that crystallization in various degree occurs silicon film.
Fig. 8 is 100.0mm for plasma electrode and sample table surface spacing are set, and uses different plasma power to prepare the Raman spectrum result of silicon film.
Fig. 9 is 72.5mm for plasma electrode and sample table surface spacing are set, and uses different plasma power to prepare the Raman spectrum result of silicon film.
Figure 10, for hot-wire temperature is 1800 ℃, along with the increase of plasma electrode and sample surfaces interstation distance, prepares the Raman spectrum result of silicon film.
Figure 11 be under combining method high speed deposition condition along with the increase of plasma electrode and sample table surface spacing, the Raman spectrum result of the silicon film of preparation.
Figure 12 is 100.0mm for plasma electrode and sample table surface spacing are set, and uses combining method to prepare the Raman spectrum result of silicon film under different direct current (DC) biases.
Figure 13 is 72.5mm for plasma electrode and sample table surface spacing are set, and uses combining method to prepare the Raman spectrum result of silicon film under different direct current (DC) biases.
In figure: 1-vacuum cavity, 2-sample table, 3-flat substrate, 4-heated filament electrode, 5-heated filament, 6-radio-frequency electrode, 7-radio-frequency power supply, 8-grid bias power supply, 9-direct supply, 10-heated filament support I, 11-bracket, 12-heated filament support II, 13-magnetic rod, 14-pick-and-place device.
Embodiment
Below in conjunction with drawings and Examples in detail the present invention is described in detail.
Fig. 1 is that plasma body-heated filament of the present invention-bias voltage is in conjunction with the device of preparing silicon film, this device is the improvement to existing hot-wire chemical gas-phase deposition device, comprise the sample table 2, flat substrate 3, heated filament 5 and the radio-frequency electrode 6 that are arranged at vacuum cavity 1 inside, and the radio-frequency power supply 7, grid bias power supply 8 and the direct supply 9 that are arranged at vacuum cavity 1 outside; Described heated filament 5 is arranged between sample table 2 and radio-frequency electrode 6, and described flat substrate 3 is fixed on sample table 2 surfaces; Described direct supply 9 is for heating described heated filament 5, and make by heated filament electrode 4(electro-conductive material respectively at its two poles of the earth) be connected with the two ends of described heated filament 5; Described grid bias power supply 8 for applying bias voltage between radio-frequency electrode 6 and sample table 2, and grid bias power supply 8 is connected with sample table 2; Described radio-frequency power supply 7 is for generation of plasma body, and spontaneous generation sheath layer electric field understood in the outer region of plasma body, and sheath layer electric field causes ion bombardment by the charged species in accelerate plasma to substrate 3, and described radio-frequency power supply 7 is connected with radio-frequency electrode 6.
Between described sample table 2 and vacuum cavity 1, without electrically contacting, described radio-frequency electrode 6 is 0.5～30cm to the distance between substrate, and preferably 4～20cm, is more preferably 4.5～15cm; Described heated filament 5 is 1～8cm to the distance on sample table 2 surfaces, is more preferably 2～5cm, preferably 2～3.5cm.Described sample table 2 is used electro-conductive material to make, and is generally metal, and its specific conductivity is 10
3～10
8between S/cm; The area on described sample table 2 surfaces is 100～1.5 * 10
4cm
2, the area on radio-frequency electrode 6 surfaces is greater than the surface area of sample table.The surface of described sample table 2 adopts the upwards design of (Fig. 1 (a)), downward (Fig. 1 (b)) or inclination, sample table 2 surfaces of inclined design are more than or equal to 30 ° with the interfacial angle that horizontal plane forms, substrate 3 is fixed on sample table 2 surfaces, carries out the deposition of silicon film on substrate 3 surfaces.
In combining method, use single heated filament depositing silicon film, can only in the certain areal extent of substrate surface, keep the even of depositing silicon film, when the more large-area substrate of needs application, need to use heated filament or the many heated filaments of non-linear shapes, heated filament be shaped as linear, helical, netted, the curve or other shape that are fermat spiral; The layout of many heated filaments can be cross arrangement, be arranged in parallel or other arrangement modes, first-selectedly uses many heated filaments to be arranged in parallel.When many heated filaments are arranged in parallel, the spacing between adjacent heated filament is 1～10cm, is more preferably between 1～7cm, and preferably, between 2～5cm, substrate is preferably dimensioned to be 100cm * 150cm.
When the layout type of many heated filaments is when being arranged in parallel, described heated filament electrode is heated filament support, adopts coupling apparatus that heated filament support carries out silicon deposited film as Figure 2-3; Described heated filament support comprises interconnective support I 10, support II 12 and for the bracket 11 of supporting bracket I 10, described support I 10 and support II 12 be arranged in parallel, and described heated filament is screwed in support I 10; In vacuum chamber, use with the magnetic rod 13 of pick-and-place device 14 and regain or emit heated filament support (Fig. 4-5).Thereby pick-and-place device 14 can rotate and pick up, discharges heated filament support along the single axle of itself and magnetic rod 13 junctions.
Utilize above-mentioned coupling apparatus to prepare the method for silicon film (combining method), the method is with H
2and SiH
4as reactant gases, reactant gases issues solution estranged in the acting in conjunction of plasma body and heated filament, and the charged species in the sheath layer electric field plasma of plasma body is accelerated, and substrate is caused to ion bombardment; The bias voltage applying can strengthen or weaken the bombardment intensity of ion pair film and regulate plasma body intermediate ion and electron energy; By the regulation and control to the form of the size of bias voltage, bias voltage, silane concentration, substrate and radio-frequency electrode spacing and/or radio frequency power, realize the control to the structure of prepared silicon film and quality.
In the method, sample table Heating temperature is stable between 100～350 ℃, SiH in vacuum cavity
4and H
2volume ratio be 0.5%-100%, regulate vacuum cavity internal pressure stable between 1～2000Pa, energising is heated to 1500～2200 ℃ to heated filament to open direct supply, opens radio-frequency power supply and produces plasma body, controls radio frequency power density between 0.1～5.0W/cm
2between.
Embodiment 1
Use combining method depositing silicon film, key step is: substrate is fixed in the sample table of coupling apparatus, uses sheet glass, silicon chip as substrate.Heated filament is fixed on heated filament electrode, is 35mm by adjusting electrode height control heated filament to substrate surface distance, and heater material is tungsten, to vacuum chamber, passes into and uses H
2the SiH of dilution
4gas, SiH
4volume fraction be 5%, Controlling System pressure maintains 20Pa, energising make heated filament be heated to 1600 ℃.At substrate surface, obtain silicon film material (not opening plasma electrical source in the present embodiment).Under different plasma electrode and sample table surface spacing, prepare the Raman spectrum of silicon film material as shown in Figure 6, in Fig. 6, the Raman spectrum of silicon film shows that silicon film is non-crystalline state.
Embodiment 2
Difference from Example 1 is: hot-wire temperature is 1600 ℃, opens RF source, plasma glow start, and the power of controlling flat plasma area is 1.35W/cm
2.Under different plasma electrode and sample table surface spacing, prepare the Raman spectrum of silicon film material as shown in Figure 7, in Fig. 7, the Raman spectrum of silicon film shows that combining method applying plasma can impel film that crystallization occurs effectively.Different along with plasma electrode and sample surfaces spacing, there is crystallization in various degree in silicon film.
Embodiment 3
Difference from Example 2 is: plasma electrode and sample table surface spacing 100.0mm are set, under different plasma power density, prepare the Raman spectrum of silicon film material as shown in Figure 8, in Fig. 8, the Raman spectrum of silicon film shows that combining method applying plasma can impel film that crystallization occurs effectively.Along with the difference of plasma power density, there is crystallization in various degree in silicon film.
Embodiment 4
Difference from Example 3 is: plasma electrode and sample table surface spacing 72.5mm are set, under different plasma power density, prepare the Raman spectrum of silicon film material as shown in Figure 9, in Fig. 9, the Raman spectrum of silicon film shows that combining method applying plasma can impel film that crystallization occurs effectively.Along with the difference of plasma power density, there is crystallization in various degree in silicon film.
Embodiment 5
Difference from Example 2 is: hot-wire temperature is 1800 ℃, under different plasma electrode and sample table surface spacing, prepare the Raman spectrum of silicon film material as shown in figure 10, in Figure 10, the Raman spectrum of silicon film shows reducing along with plasma electrode and sample surfaces spacing in combining method, the microcrystalline silicon film degree of crystallization of preparation slightly reduces, and grain-size reduces gradually.
Embodiment 6
Difference from Example 2 is: pressure is 50Pa, heated filament and sample table surface spacing are 20mm, under different plasma electrode and sample table surface spacing, prepare the Raman spectrum of silicon film material as shown in figure 11, in Figure 11, the Raman spectrum of silicon film shows in combining method that, along with the increase of plasma electrode and sample table surface spacing, the microcrystalline silicon film degree of crystallization of preparation slightly raises.
Embodiment 7
Difference from Example 2 is: fixed electorde and sample table surface spacing are 45.0mm, by DC source, between sample table and plasma body, apply direct current (DC) bias, by regulating bias polarity and intensity, obtain result as shown in figure 12, in Figure 12, the Raman spectrum of silicon film shows along with applying direct current (DC) bias by just increasing gradually to bearing silicon film degree of crystallization in change procedure.
Embodiment 8
Difference from Example 7 is: fixed electorde and sample table surface spacing are 72.5mm, by DC source, between sample table and plasma body, apply direct current (DC) bias, by regulating bias polarity and intensity, obtain result as shown in figure 13, in Figure 13, the Raman spectrum of silicon film shows along with applying direct current (DC) bias by just increasing gradually to bearing silicon film degree of crystallization in change procedure.
Above embodiment shows, adopts apparatus of the present invention and method to carry out in the deposition of silicon film, by regulating plasma electrode and sample surfaces spacing, can regulate and control the crystallization degree of silicon film; In plasma electrode and the immovable situation of sample table surface spacing, along with the reduction of plasma power density, silicon film crystallization degree reduces gradually; Between plasma body and sample table, apply bias voltage, by controlling the polarity/frequency of bias voltage and the quality that intensity can be adjusted film.
Claims (12)
1. plasma body-heated filament-bias voltage is in conjunction with the device of preparing silicon film, it is characterized in that: this device comprises sample table, flat substrate, heated filament and the radio-frequency electrode that is arranged at vacuum cavity inside, and the radio-frequency power supply, grid bias power supply and the direct supply that are arranged at vacuum cavity outside; Wherein: described heated filament is arranged between sample table and radio-frequency electrode, described flat substrate is fixed on sample table surface; Described direct supply is used for heating described heated filament, and its two poles of the earth are connected with the two ends of described heated filament by heated filament electrode respectively; Described grid bias power supply for applying bias voltage between radio-frequency electrode and sample table, and grid bias power supply is connected with sample table; Described radio-frequency power supply is for generation of plasma body, and spontaneous generation sheath layer electric field understood in the outer region of plasma body, and sheath layer electric field causes ion bombardment by the charged species in accelerate plasma to substrate, and described radio-frequency power supply is connected with radio-frequency electrode.
2. plasma body-heated filament according to claim 1-bias voltage is in conjunction with the device of preparing silicon film, it is characterized in that: between described sample table and vacuum cavity, nothing electrically contacts, described radio-frequency electrode is 0.5～30cm to the distance between substrate, and described heated filament is 1～8cm to the distance of sample table.
3. plasma body-heated filament according to claim 1-bias voltage, in conjunction with the device of preparing silicon film, is characterized in that: described sample table is used electro-conductive material to make, and its specific conductivity is 10
3～10
8between S/cm; The area on described sample table surface is 100～1.5 * 10
4cm
2, the area on radio-frequency electrode surface is greater than the surface area of sample table.
4. plasma body-heated filament according to claim 1-bias voltage is in conjunction with the device of preparing silicon film, it is characterized in that: the surface of described sample table adopts upwards, downwards or the design of tilting, sample table surface and the interfacial angle that horizontal plane forms of inclined design are more than or equal to 30 °, substrate is fixed on sample table surface, at substrate surface, carry out the deposition of silicon film, to reduce the impact of plasma generation dust on film growth quality.
5. plasma body-heated filament according to claim 1-bias voltage, in conjunction with the device of preparing silicon film, is characterized in that: described heated filament is one or more, described heated filament be shaped as linear, helical, netted, the curve or other shape that are fermat spiral; When adopting many heated filaments, its layout is cross arrangement, is arranged in parallel or other arrangement mode; While being arranged in parallel, the spacing between adjacent heated filament is 1～10cm.
6. plasma body-heated filament according to claim 5-bias voltage, in conjunction with the device of preparing silicon film, is characterized in that: when the layout type of many heated filaments is when being arranged in parallel, described heated filament electrode is heated filament support; Described heated filament support comprises interconnective support I, support II and for the bracket of supporting bracket I, described support I and support II be arranged in parallel, and described heated filament is screwed in support I; In vacuum chamber, use with the magnetic rod of pick-and-place device and regain or emit heated filament support.
7. plasma body-heated filament according to claim 1-bias voltage, in conjunction with the device of preparing silicon film, is characterized in that: the material of described substrate is glass, silicon chip or polyimide; The material of described heated filament is graphite, wolfram varbide, tungsten nitride, tantalum carbide, tantalum nitride or metal, and the heated filament of metal material is pure metal or its alloy of tungsten, rhenium, tantalum, molybdenum, rhodium, platinum, titanium or iridium.
8. plasma body-heated filament according to claim 1-bias voltage, in conjunction with the device of preparing silicon film, is characterized in that: described radio-frequency power supply type is a kind of in RF, VHF and direct current; Described grid bias power supply is direct supply, square-wave generator or sine-wave generator.
9. utilize the arbitrary described device of claim 1-8 to prepare the method for silicon film, it is characterized in that: the method is with H
2and SiH
4as reactant gases, reactant gases issues solution estranged in the acting in conjunction of plasma body and heated filament, and the charged species in the sheath layer electric field plasma of plasma body is accelerated, and substrate is caused to ion bombardment; The bias voltage applying can strengthen or weaken the bombardment intensity of ion pair film and regulate plasma body intermediate ion and electron energy; By the regulation and control to the form of the size of bias voltage, bias voltage, silane concentration, substrate and radio-frequency electrode spacing and/or radio frequency power, realize the control to the structure of prepared silicon film and quality.
10. the method for preparing silicon film according to claim 9, is characterized in that: in the method, sample table temperature is stable between 100～350 ℃, SiH in vacuum cavity
4and H
2volume ratio be SiH
4: H
2=0.5%～100%, regulate vacuum cavity internal pressure stable between 1～2000Pa, energising is heated to 1500～2200 ℃ to heated filament to open direct supply, opens radio-frequency power supply and produces plasma body, controls radio frequency power density between 0.1～5.0W/cm
2between.
11. according to the method for preparing silicon film described in claim 9 or 10, it is characterized in that: by regulating plasma electrode and sample surfaces spacing, can regulate and control the crystallization degree of silicon film; In plasma electrode and the immovable situation of sample table surface spacing, along with the reduction of plasma power density, silicon film crystallization degree reduces gradually.
12. according to the method for preparing silicon film described in claim 9 or 10, it is characterized in that: the scope that applies direct current (DC) bias between plasma body and sample table is-100～100V, by controlling the polarity of bias voltage and the quality that intensity can be adjusted film; Between plasma body and sample table, apply AC bias, frequency is 20～20kHz, by controlling the frequency of bias voltage and quality that intensity can be adjusted film, reduce dust, optimizing the orientation of crystal grain and the size of crystal grain is controlled.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040106269A1 (en) * | 2001-07-26 | 2004-06-03 | Xunming Deng | Novel hot-filament chemical vapor deposition chamber and process with multiple gas inlets |
| CN2666928Y (en) * | 2003-09-23 | 2004-12-29 | 青岛科技大学 | Apparatus for chemical gas phase depositing diamond film by plasma heat wire method |
| CN2820878Y (en) * | 2004-09-13 | 2006-09-27 | 青岛科技大学 | Gas depositing thin film device of plasma reinforced heat wire chemistry |
| CN101363118A (en) * | 2007-08-10 | 2009-02-11 | 北方工业大学 | Capacitance coupling plasma apparatus and method for growing silicon carbide film on silicon substrate |
| CN102330067A (en) * | 2011-09-22 | 2012-01-25 | 中国航天科技集团公司第五研究院第五一○研究所 | Quick and uniform preparation method of microcrystalline silicon thin film of flexible substrate |
-
2013
- 2013-04-09 CN CN201310121151.8A patent/CN104099585A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040106269A1 (en) * | 2001-07-26 | 2004-06-03 | Xunming Deng | Novel hot-filament chemical vapor deposition chamber and process with multiple gas inlets |
| CN2666928Y (en) * | 2003-09-23 | 2004-12-29 | 青岛科技大学 | Apparatus for chemical gas phase depositing diamond film by plasma heat wire method |
| CN2820878Y (en) * | 2004-09-13 | 2006-09-27 | 青岛科技大学 | Gas depositing thin film device of plasma reinforced heat wire chemistry |
| CN101363118A (en) * | 2007-08-10 | 2009-02-11 | 北方工业大学 | Capacitance coupling plasma apparatus and method for growing silicon carbide film on silicon substrate |
| CN102330067A (en) * | 2011-09-22 | 2012-01-25 | 中国航天科技集团公司第五研究院第五一○研究所 | Quick and uniform preparation method of microcrystalline silicon thin film of flexible substrate |
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Application publication date: 20141015 |