CN104097146A - Polishing pad dresser structure and manufacturing method thereof - Google Patents
Polishing pad dresser structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN104097146A CN104097146A CN201310603381.8A CN201310603381A CN104097146A CN 104097146 A CN104097146 A CN 104097146A CN 201310603381 A CN201310603381 A CN 201310603381A CN 104097146 A CN104097146 A CN 104097146A
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- China
- Prior art keywords
- protective layer
- polishing pad
- sapphire
- axial
- chip body
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- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 52
- 239000010980 sapphire Substances 0.000 claims abstract description 52
- 239000011241 protective layer Substances 0.000 claims description 34
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 24
- 238000012546 transfer Methods 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000010432 diamond Substances 0.000 claims description 12
- 229910003460 diamond Inorganic materials 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 10
- 239000010410 layer Substances 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 238000004549 pulsed laser deposition Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000007547 defect Effects 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- CODVACFVSVNQPY-UHFFFAOYSA-N [Co].[C] Chemical compound [Co].[C] CODVACFVSVNQPY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000010437 gem Substances 0.000 claims 1
- 229910001751 gemstone Inorganic materials 0.000 claims 1
- 230000001681 protective effect Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000005299 abrasion Methods 0.000 description 5
- 210000004081 cilia Anatomy 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a polishing pad dresser structure and a manufacturing method thereof, wherein the polishing pad dresser structure comprises a sapphire chip body with a specific axial direction and a protective film, the upper surface of the sapphire chip body is provided with a microstructure, the protective film covers the upper surface of the sapphire body, and the height error of the microstructure is less than 5% of the average height.
Description
Technical field
The present invention relates to a kind of polishing pad trimmer structure and preparation method thereof, especially have specific axis to sapphire chip on form the low and corrosion resistant micro-structural of coefficient of friction.
Background technology
Along with flourish, the scientific and technological with rapid changepl. never-ending changes and improvements progress of semiconductor and opto-electronics, the requirement of element live width is diminished gradually, and the high development of the long-pending body of circuit, in whole manufacture of semiconductor, the processing procedure of planarization is increasingly important.Can meet in electronic component process the demand of high planarization with chemical mechanical polishing method (Chemical Mechanical Polishing, CMP) now.
In chemical mechanical polishing method, the pad interface using has hole and two structures of cilium, and the object of hole is to conserve rubbing paste (slurry), and cilium is in order to rub with workpiece machine, so, by the combination of chemical force and mechanical force, remove the position of surface irregularity.But, polishing pad also can be passivated in the process of polishing, issuable phenomenon comprises particle (particle) that hole is removed or abrasive grains (abrasive) filling space, cilium because rubbing and have abrasion etc. for a long time, and this all can cause the reduction of polishing efficiency.
In order to maintain certain polishing efficiency, and avoid stopping of processing procedure, the mode adopting is at present to carry out chemically mechanical polishing on one side, use polishing pad trimmer to strike off surface particles and scratch arrangement on one side simultaneously, support polishing fluid and make to produce on the surface of polishing pad new hole to contain, and produce new cilium with removing materials.
Now, the structure of polishing pad trimmer is in metal dish surface with diamond particles hard solder, the height exposed due to its diamond differs, face shaping differs and is not of uniform size, and make the utilization rate of overall diamond particles in the time of finishing approximately only have 10% left and right, and because diamond particles is to be combined with metal dish by the mode of plating or hard solder sintering, adhesion and contact area size and state are proportionate, still there is between interface rising-heat contracting-cold to the diamond failure state that comes off in diamond grains and interpass, while bort being come off when rising-heat contracting-cold is serious or the metal of following layer suffers the corrosion of rubbing paste, may cause local or large-area scratch and the fragmentation loss of machining object, at this moment the problem producing is just even more serious than periodic maintenance.
In addition, although developed with ceramic material and formed integrated polishing pad trimmer in recent years, and can avoid the problem of the disengaging of diamond, but the hardness of entirety is still far below diamond, and the polishing fluid of using for wafer, still have the phenomenon being corroded, therefore, need a kind of can resistance to machinery, the wearing and tearing of chemistry, face micro-structural height is identical, in the same size simultaneously, and the polishing pad trimmer of difficult drop-off.
Summary of the invention
Main purpose of the present invention is to provide a kind of polishing pad trimmer structure; this polishing pad trimmer structure comprises a sapphire chip body and a diaphragm; sapphire chip body for have a specific axis to; and on its upper surface, there are multiple micro-structurals; and this protective layer is diamond film or quasi cobalt carbon diaphragm; cover the upper surface of this sapphire body; wherein specific axis to be a axially, c-axis to, r is axial, m is axial, n is axial and v is axial one of them, and the height error of described micro-structural is less than 5% of an average height.
Further; between sapphire chip body and protective layer, also comprise a cushion; to increase the adhesive force of protective layer, wherein this cushion is aluminium oxide, titanium oxide, the aluminium oxide titania mixture of titanium, platinum, copper, Doped with Titanium, and graphite at least one of them.
Another object of the present invention is to provide a kind of preparation method of polishing pad trimmer of the present invention, and the method comprises chip unit and forms step, image transfer step, heat treatment step and protective layer formation step.Chip unit form step be by raw material after high temperature furnace melt, in specific axis to crystal seed crystal pulling, and form specific axis to crystal bar, then by section, obtain having specific axis to sapphire chip.Image transfer step be this have specific axis to sapphire chip, in the image transfer mode of manufacture of semiconductor, make this have specific axis to the surface of sapphire chip on form multiple micro-structurals, form this sapphire chip body.
Heat treatment step is by this sapphire chip body of image transfer step, puts into high temperature furnace, be warming up to 1000 DEG C～1800 DEG C maintain 1～8 hour after stove cold, and sapphire lattice is reformed, reduce lattice defect.It is to form a protective layer on sapphire chip body that protective layer forms step, and completes polishing pad trimmer structure.In addition, after heat treatment step, protective layer forms before step, also can first carry out a buffer layer forming step, first forms a cushion to increase the adhesive force of protective layer on sapphire chip body.
By the sapphire wafer with extensive use, technology maturation, form the sapphire chip body with micro-structural thereon in semi-conductive image transfer mode, due to sapphire chip body have specific axis to.
Sapphire wafer; and reduce lattice defect through heat treatment, and form protective layer thereon, reach microstructure height evenly, the advantage of difficult drop-off; more reach machinery and chemical abrasion resisting, effect against corrosion by protective layer, and effectively solve the problem facing in prior art.
Brief description of the drawings
Fig. 1 is the generalized section of polishing pad trimmer structure of the present invention;
Fig. 2 A to Fig. 2 D is solid and the amplification view of sapphire chip body in Fig. 1; And
Fig. 3 to Fig. 6 is the flow chart of the preparation method of polishing pad trimmer of the present invention.
Wherein, description of reference numerals is as follows:
1 polishing pad trimmer structure
10 sapphire chips
15 micro-structurals
20 protective layers
30 cushions
The preparation method of S1 polishing pad trimmer
S10 chip unit forms step
S20 image transfer step
S30 heat treatment step
S40 protective layer forms step
S50 buffer layer forming step
Detailed description of the invention
Below coordinate graphic and component symbol to do more detailed description to embodiments of the present invention, to make those skilled in the art can implement according to this with reference to description word.
Consulting Fig. 1, is the generalized section of polishing pad trimmer structure of the present invention.As shown in Figure 1; polishing pad trimmer structure 1 of the present invention comprises a sapphire chip body 10; an and protective layer 20; sapphire chip body 10 be specific axis to chip; and on its upper surface, there are multiple micro-structurals 15; protective layer 20 is that diamond film or a class are bored carbon (Diamond Like Carbon, DLC) film, covers the upper surface of this sapphire body 10.This specific axis is to can axially (comprising for a
and
), c-axis axially (comprises to ([0001]), r-
and
), m-axially (comprises
and
), this v is axial
and this n is axial
again wherein a axially, c-axis to and m-axial side to abrasion resistance higher, and r-is axial, v is axial and the abrasion resistance of the axial forward of n is higher.
Further; between sapphire chip body 10 and a protective layer 20, also comprise a cushion 30; to increase the adhesive force of protective layer 20; aluminium oxide, titanium oxide, aluminium oxide titania mixture that wherein this cushion 20 is titanium, platinum, copper, chromium, nickel, silicon nitride, silicon oxynitride, Doped with Titanium, and graphite at least one of them.
Consulting Fig. 2 A to Fig. 2 D, is solid and the amplification view of sapphire chip body in Fig. 1.As shown in Figure 2 A, the described micro-structural 15 on sapphire chip body 10 is symmetrical tack cone post; As shown in Figure 2 B, the described micro-structural 15 on sapphire chip body 10 is not for claiming tack cone post; As shown in Figure 2 C, the described micro-structural 15 on sapphire chip body 10 is symmetrical tip cone post; And; As shown in Figure 2 D, the described micro-structural 15 on sapphire chip body 10 is asymmetric tip cone post.Be only example at this, and not in order to limit, can be according to the actual shape that forms various micro-structurals that uses.And the height error of described micro-structural 15 is less than 5% of average height.
Consulting Fig. 3, is the flow chart of the preparation method of polishing pad trimmer of the present invention.As shown in Figure 3, the preparation method S1 of polishing pad trimmer of the present invention comprises chip unit formation step S10, image transfer step S20, heat treatment step S30 and protective layer formation step S40.Chip unit form step S10 be by raw material after high temperature furnace melt, in specific axis to crystal seed crystal pulling, and form specific axis to crystal bar, then by section, obtain having specific axis to sapphire chip.
Image transfer step S20 be this have specific axis to sapphire chip, in the image transfer mode of manufacture of semiconductor, make this have specific axis to the upper surface of sapphire chip on form multiple micro-structurals 15, form this sapphire chip body 10, wherein image transfer step S20 can comprise traditional coating photoresistance, exposure, development, wet etching, remove the thin portion such as photoresistance step, also can be by wet etching, remove photoresistance and change dry ecthing and photoresistance ashing into.
Heat treatment step S30 is by this sapphire chip body 10 after image transfer step S20, puts into a high temperature furnace, be warming up to 1000 DEG C～1800 DEG C maintain 1～8 hour after stove cold, so, sapphire lattice is reformed, and is reduced lattice defect.
It is with sputter (Sputtering) that protective layer forms step S40, Metalorganic chemical vapor deposition (metalorganic chemical vapor deposition, MOCVD), electricity slurry chemical vapour deposition (CVD) (Plasma enhanced chemical vapor deposition, PECVD), low-pressure chemical vapor deposition (Low pressure chemical vapor deposition, LPCVD), pulsed laser deposition (pulsed laser deposition, PLD), and arc ions evaporation (arc ion plating, AIP) one of them forms a protective layer 20 on sapphire chip body 10, and complete polishing pad trimmer structure of the present invention.
Further; can be after heat treatment step S30; protective layer first carries out a buffer layer forming step S50 before forming step S40, is mainly one of them with evaporation, sputter, MOCVD, PECVD, LPCVD, PLD and AIP, first forms a cushion 30 on sapphire chip body 10.
Further; can be as shown in Figures 4 to 6; heat treatment step S30 can carry out completing after buffer layer forming step S50; carry out again protective layer and form step S40; also can heat-treat again step S30 completing after buffer layer forming step S50 and protective layer form step S40; more widely, can also respectively carry out heat treatment step S30 one time at image transfer step S20, buffer layer forming step S50 and protective layer formation step S40.
Technical characterictic of the present invention is mainly; application forms the conventional sapphire wafer of light emitting diode; be formed on upper surface and have the sapphire chip body of micro-structural in semi-conductive image transfer mode; due to sapphire chip body have specific axis to; and reduce defect through Overheating Treatment, and form protective layer thereon.So, except the height that reaches micro-structural evenly, difficult drop-off, more reach machinery and chemical abrasion resisting, effect against corrosion by protective layer, and effectively solve the problem facing in prior art.
As described above is only in order to explain preferred embodiment of the present invention; not attempt is done any pro forma restriction to the present invention according to this; therefore, all have under identical invention spirit, do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protection.
Claims (11)
1. a polishing pad trimmer structure, is characterized in that, comprises:
One sapphire chip body, for have a specific axis to chip, and on its upper surface, there are multiple micro-structurals; And
One protective layer, is a diamond film or a quasi cobalt carbon diaphragm, covers the upper surface of this sapphire body,
Wherein this specific axis to be a axially, c-axis to, r is axial, m is axial, n is axial and v is axial one of them, and the height error of described micro-structural is less than 5% of an average height.
2. polishing pad trimmer structure as claimed in claim 1, is characterized in that, further comprises a cushion, and this cushion is arranged between this sapphire chip body and this protective layer.
3. polishing pad trimmer structure as claimed in claim 2, it is characterized in that, this cushion is aluminium oxide, titanium oxide, the aluminium oxide titania mixture of titanium, platinum, copper, chromium, nickel, silicon nitride, silicon oxynitride, Doped with Titanium, and graphite at least one of them.
4. polishing pad trimmer structure as claimed in claim 1, is characterized in that, the face shaping of described micro-structural is symmetrical tack cone post, symmetrical tip cone post, asymmetric tack cone post, or asymmetric tip cone post.
5. a preparation method for polishing pad trimmer structure, is characterized in that, comprises:
One chip unit forms step, by raw material after high temperature furnace melt, in specific axis to crystal seed crystal pulling, and form a specific axis to a crystal bar, then by this crystal bar section obtain having this specific axis to a sapphire chip;
One image transfer step in the mode of image transfer, forms multiple micro-structurals on a upper surface of this sapphire chip, completes a sapphire chip body;
One protective layer forms step, on this upper surface of this sapphire chip body, forms a protective layer, completes this polishing pad trimmer structure; And
At least one heat treatment step; to there is this jewel chip body and put into a high temperature furnace and carry out a heat treatment, to repair lattice defect and/or to increase protective layer adhesive force, this at least heat treatment step after this image transfer step; and/or carry out after protective layer formation step
Wherein this specific axis to be a axially, c-axis to, r is axial, m is axial, n is axial and v is axial one of them, and the height error of described micro-structural is less than 5% of an average height.
6. preparation method as claimed in claim 5; it is characterized in that; it is with sputter, Metalorganic chemical vapor deposition, the chemical vapour deposition (CVD) of electricity slurry, low-pressure chemical vapor deposition, pulsed laser deposition that this protective layer forms step, and one of them of arc ions evaporation forms this protective layer in this upper surface of this sapphire chip body.
7. preparation method as claimed in claim 5, is characterized in that, the face shaping of described micro-structural is symmetrical tack cone post, symmetrical tip cone post, asymmetric tack cone post, or asymmetric tip cone post.
8. preparation method as claimed in claim 5; it is characterized in that; further before forming step, protective layer first carries out a buffer layer forming step; upper surface at this sapphire chip body first forms a cushion, and wherein this cushion is formed with one of them of evaporation, sputter, MOCVD, PECVD, LPCVD, PLD and AIP.
9. preparation method as claimed in claim 8, is characterized in that, this cushion is aluminium oxide, titanium oxide, the aluminium oxide titania mixture of titanium, platinum, copper, Doped with Titanium, and graphite at least one of them.
10. preparation method as claimed in claim 5, is characterized in that, this heat treatment step is by this sapphire chip completing after this image transfer step, puts into a high temperature furnace, be warming up to 1000 DEG C～1800 DEG C maintain 1～8 hour after stove cold.
11. preparation methods as claimed in claim 8, is characterized in that, further before this buffer layer forming step or/after carry out again a heat treatment step.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102112375A TWI546156B (en) | 2013-04-08 | 2013-04-08 | Polishing pad dresser structure and its making method |
| TW102112375 | 2013-04-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104097146A true CN104097146A (en) | 2014-10-15 |
| CN104097146B CN104097146B (en) | 2017-06-09 |
Family
ID=51665892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310603381.8A Expired - Fee Related CN104097146B (en) | 2013-04-08 | 2013-11-26 | Polishing pad dresser structure and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104097146B (en) |
| TW (1) | TWI546156B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114267761A (en) * | 2021-12-22 | 2022-04-01 | 广东中图半导体科技股份有限公司 | Composite patterned substrate for LED growth, epitaxial wafer and preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007044823A (en) * | 2005-08-10 | 2007-02-22 | Soken:Kk | Cmp pad conditioner in semiconductor planarization cmp process (chemical-mechanical polishing) |
| US20070259609A1 (en) * | 2004-03-31 | 2007-11-08 | Hiroshi Iiyoshi | Cmp Conditioner |
| US20100035022A1 (en) * | 2008-08-06 | 2010-02-11 | Jer-Liang Andrew Yeh | Substrate with High Fracture Strength |
| CN102069453A (en) * | 2009-11-24 | 2011-05-25 | 陈荣方 | Sharpener trimmer with protection film and forming method of protection film |
| CN102343547A (en) * | 2011-10-20 | 2012-02-08 | 天津理工大学 | Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution |
| KR20120026709A (en) * | 2010-09-10 | 2012-03-20 | 신한다이아몬드공업 주식회사 | Cmp pad conditioner and its manufacturing method |
| JP2012213833A (en) * | 2011-03-31 | 2012-11-08 | Shingijutsu Kaihatsu Kk | Sintered body for pad conditioning and its manufacturing method |
| CN202794802U (en) * | 2012-01-18 | 2013-03-13 | 鑫晶钻科技股份有限公司 | Image capture apparatus |
-
2013
- 2013-04-08 TW TW102112375A patent/TWI546156B/en not_active IP Right Cessation
- 2013-11-26 CN CN201310603381.8A patent/CN104097146B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070259609A1 (en) * | 2004-03-31 | 2007-11-08 | Hiroshi Iiyoshi | Cmp Conditioner |
| JP2007044823A (en) * | 2005-08-10 | 2007-02-22 | Soken:Kk | Cmp pad conditioner in semiconductor planarization cmp process (chemical-mechanical polishing) |
| US20100035022A1 (en) * | 2008-08-06 | 2010-02-11 | Jer-Liang Andrew Yeh | Substrate with High Fracture Strength |
| CN102069453A (en) * | 2009-11-24 | 2011-05-25 | 陈荣方 | Sharpener trimmer with protection film and forming method of protection film |
| KR20120026709A (en) * | 2010-09-10 | 2012-03-20 | 신한다이아몬드공업 주식회사 | Cmp pad conditioner and its manufacturing method |
| JP2012213833A (en) * | 2011-03-31 | 2012-11-08 | Shingijutsu Kaihatsu Kk | Sintered body for pad conditioning and its manufacturing method |
| CN102343547A (en) * | 2011-10-20 | 2012-02-08 | 天津理工大学 | Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution |
| CN202794802U (en) * | 2012-01-18 | 2013-03-13 | 鑫晶钻科技股份有限公司 | Image capture apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114267761A (en) * | 2021-12-22 | 2022-04-01 | 广东中图半导体科技股份有限公司 | Composite patterned substrate for LED growth, epitaxial wafer and preparation method |
| CN114267761B (en) * | 2021-12-22 | 2023-10-20 | 广东中图半导体科技股份有限公司 | Composite patterned substrate for LED growth, epitaxial wafer and preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104097146B (en) | 2017-06-09 |
| TWI546156B (en) | 2016-08-21 |
| TW201438846A (en) | 2014-10-16 |
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