CN104097146A - Polishing pad dresser structure and manufacturing method thereof - Google Patents

Polishing pad dresser structure and manufacturing method thereof Download PDF

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Publication number
CN104097146A
CN104097146A CN201310603381.8A CN201310603381A CN104097146A CN 104097146 A CN104097146 A CN 104097146A CN 201310603381 A CN201310603381 A CN 201310603381A CN 104097146 A CN104097146 A CN 104097146A
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China
Prior art keywords
protective layer
polishing pad
sapphire
axial
chip body
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CN201310603381.8A
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Chinese (zh)
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CN104097146B (en
Inventor
沈汶谚
钟润文
魏匡灵
戴子轩
吕权浪
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TERA XTAL Tech CORP
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TERA XTAL Tech CORP
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention provides a polishing pad dresser structure and a manufacturing method thereof, wherein the polishing pad dresser structure comprises a sapphire chip body with a specific axial direction and a protective film, the upper surface of the sapphire chip body is provided with a microstructure, the protective film covers the upper surface of the sapphire body, and the height error of the microstructure is less than 5% of the average height.

Description

Polishing pad trimmer structure and preparation method thereof
Technical field
The present invention relates to a kind of polishing pad trimmer structure and preparation method thereof, especially have specific axis to sapphire chip on form the low and corrosion resistant micro-structural of coefficient of friction.
Background technology
Along with flourish, the scientific and technological with rapid changepl. never-ending changes and improvements progress of semiconductor and opto-electronics, the requirement of element live width is diminished gradually, and the high development of the long-pending body of circuit, in whole manufacture of semiconductor, the processing procedure of planarization is increasingly important.Can meet in electronic component process the demand of high planarization with chemical mechanical polishing method (Chemical Mechanical Polishing, CMP) now.
In chemical mechanical polishing method, the pad interface using has hole and two structures of cilium, and the object of hole is to conserve rubbing paste (slurry), and cilium is in order to rub with workpiece machine, so, by the combination of chemical force and mechanical force, remove the position of surface irregularity.But, polishing pad also can be passivated in the process of polishing, issuable phenomenon comprises particle (particle) that hole is removed or abrasive grains (abrasive) filling space, cilium because rubbing and have abrasion etc. for a long time, and this all can cause the reduction of polishing efficiency.
In order to maintain certain polishing efficiency, and avoid stopping of processing procedure, the mode adopting is at present to carry out chemically mechanical polishing on one side, use polishing pad trimmer to strike off surface particles and scratch arrangement on one side simultaneously, support polishing fluid and make to produce on the surface of polishing pad new hole to contain, and produce new cilium with removing materials.
Now, the structure of polishing pad trimmer is in metal dish surface with diamond particles hard solder, the height exposed due to its diamond differs, face shaping differs and is not of uniform size, and make the utilization rate of overall diamond particles in the time of finishing approximately only have 10% left and right, and because diamond particles is to be combined with metal dish by the mode of plating or hard solder sintering, adhesion and contact area size and state are proportionate, still there is between interface rising-heat contracting-cold to the diamond failure state that comes off in diamond grains and interpass, while bort being come off when rising-heat contracting-cold is serious or the metal of following layer suffers the corrosion of rubbing paste, may cause local or large-area scratch and the fragmentation loss of machining object, at this moment the problem producing is just even more serious than periodic maintenance.
In addition, although developed with ceramic material and formed integrated polishing pad trimmer in recent years, and can avoid the problem of the disengaging of diamond, but the hardness of entirety is still far below diamond, and the polishing fluid of using for wafer, still have the phenomenon being corroded, therefore, need a kind of can resistance to machinery, the wearing and tearing of chemistry, face micro-structural height is identical, in the same size simultaneously, and the polishing pad trimmer of difficult drop-off.
Summary of the invention
Main purpose of the present invention is to provide a kind of polishing pad trimmer structure; this polishing pad trimmer structure comprises a sapphire chip body and a diaphragm; sapphire chip body for have a specific axis to; and on its upper surface, there are multiple micro-structurals; and this protective layer is diamond film or quasi cobalt carbon diaphragm; cover the upper surface of this sapphire body; wherein specific axis to be a axially, c-axis to, r is axial, m is axial, n is axial and v is axial one of them, and the height error of described micro-structural is less than 5% of an average height.
Further; between sapphire chip body and protective layer, also comprise a cushion; to increase the adhesive force of protective layer, wherein this cushion is aluminium oxide, titanium oxide, the aluminium oxide titania mixture of titanium, platinum, copper, Doped with Titanium, and graphite at least one of them.
Another object of the present invention is to provide a kind of preparation method of polishing pad trimmer of the present invention, and the method comprises chip unit and forms step, image transfer step, heat treatment step and protective layer formation step.Chip unit form step be by raw material after high temperature furnace melt, in specific axis to crystal seed crystal pulling, and form specific axis to crystal bar, then by section, obtain having specific axis to sapphire chip.Image transfer step be this have specific axis to sapphire chip, in the image transfer mode of manufacture of semiconductor, make this have specific axis to the surface of sapphire chip on form multiple micro-structurals, form this sapphire chip body.
Heat treatment step is by this sapphire chip body of image transfer step, puts into high temperature furnace, be warming up to 1000 DEG C~1800 DEG C maintain 1~8 hour after stove cold, and sapphire lattice is reformed, reduce lattice defect.It is to form a protective layer on sapphire chip body that protective layer forms step, and completes polishing pad trimmer structure.In addition, after heat treatment step, protective layer forms before step, also can first carry out a buffer layer forming step, first forms a cushion to increase the adhesive force of protective layer on sapphire chip body.
By the sapphire wafer with extensive use, technology maturation, form the sapphire chip body with micro-structural thereon in semi-conductive image transfer mode, due to sapphire chip body have specific axis to.
Sapphire wafer; and reduce lattice defect through heat treatment, and form protective layer thereon, reach microstructure height evenly, the advantage of difficult drop-off; more reach machinery and chemical abrasion resisting, effect against corrosion by protective layer, and effectively solve the problem facing in prior art.
Brief description of the drawings
Fig. 1 is the generalized section of polishing pad trimmer structure of the present invention;
Fig. 2 A to Fig. 2 D is solid and the amplification view of sapphire chip body in Fig. 1; And
Fig. 3 to Fig. 6 is the flow chart of the preparation method of polishing pad trimmer of the present invention.
Wherein, description of reference numerals is as follows:
1 polishing pad trimmer structure
10 sapphire chips
15 micro-structurals
20 protective layers
30 cushions
The preparation method of S1 polishing pad trimmer
S10 chip unit forms step
S20 image transfer step
S30 heat treatment step
S40 protective layer forms step
S50 buffer layer forming step
Detailed description of the invention
Below coordinate graphic and component symbol to do more detailed description to embodiments of the present invention, to make those skilled in the art can implement according to this with reference to description word.
Consulting Fig. 1, is the generalized section of polishing pad trimmer structure of the present invention.As shown in Figure 1; polishing pad trimmer structure 1 of the present invention comprises a sapphire chip body 10; an and protective layer 20; sapphire chip body 10 be specific axis to chip; and on its upper surface, there are multiple micro-structurals 15; protective layer 20 is that diamond film or a class are bored carbon (Diamond Like Carbon, DLC) film, covers the upper surface of this sapphire body 10.This specific axis is to can axially (comprising for a and ), c-axis axially (comprises to ([0001]), r- and ), m-axially (comprises and ), this v is axial and this n is axial again wherein a axially, c-axis to and m-axial side to abrasion resistance higher, and r-is axial, v is axial and the abrasion resistance of the axial forward of n is higher.
Further; between sapphire chip body 10 and a protective layer 20, also comprise a cushion 30; to increase the adhesive force of protective layer 20; aluminium oxide, titanium oxide, aluminium oxide titania mixture that wherein this cushion 20 is titanium, platinum, copper, chromium, nickel, silicon nitride, silicon oxynitride, Doped with Titanium, and graphite at least one of them.
Consulting Fig. 2 A to Fig. 2 D, is solid and the amplification view of sapphire chip body in Fig. 1.As shown in Figure 2 A, the described micro-structural 15 on sapphire chip body 10 is symmetrical tack cone post; As shown in Figure 2 B, the described micro-structural 15 on sapphire chip body 10 is not for claiming tack cone post; As shown in Figure 2 C, the described micro-structural 15 on sapphire chip body 10 is symmetrical tip cone post; And; As shown in Figure 2 D, the described micro-structural 15 on sapphire chip body 10 is asymmetric tip cone post.Be only example at this, and not in order to limit, can be according to the actual shape that forms various micro-structurals that uses.And the height error of described micro-structural 15 is less than 5% of average height.
Consulting Fig. 3, is the flow chart of the preparation method of polishing pad trimmer of the present invention.As shown in Figure 3, the preparation method S1 of polishing pad trimmer of the present invention comprises chip unit formation step S10, image transfer step S20, heat treatment step S30 and protective layer formation step S40.Chip unit form step S10 be by raw material after high temperature furnace melt, in specific axis to crystal seed crystal pulling, and form specific axis to crystal bar, then by section, obtain having specific axis to sapphire chip.
Image transfer step S20 be this have specific axis to sapphire chip, in the image transfer mode of manufacture of semiconductor, make this have specific axis to the upper surface of sapphire chip on form multiple micro-structurals 15, form this sapphire chip body 10, wherein image transfer step S20 can comprise traditional coating photoresistance, exposure, development, wet etching, remove the thin portion such as photoresistance step, also can be by wet etching, remove photoresistance and change dry ecthing and photoresistance ashing into.
Heat treatment step S30 is by this sapphire chip body 10 after image transfer step S20, puts into a high temperature furnace, be warming up to 1000 DEG C~1800 DEG C maintain 1~8 hour after stove cold, so, sapphire lattice is reformed, and is reduced lattice defect.
It is with sputter (Sputtering) that protective layer forms step S40, Metalorganic chemical vapor deposition (metalorganic chemical vapor deposition, MOCVD), electricity slurry chemical vapour deposition (CVD) (Plasma enhanced chemical vapor deposition, PECVD), low-pressure chemical vapor deposition (Low pressure chemical vapor deposition, LPCVD), pulsed laser deposition (pulsed laser deposition, PLD), and arc ions evaporation (arc ion plating, AIP) one of them forms a protective layer 20 on sapphire chip body 10, and complete polishing pad trimmer structure of the present invention.
Further; can be after heat treatment step S30; protective layer first carries out a buffer layer forming step S50 before forming step S40, is mainly one of them with evaporation, sputter, MOCVD, PECVD, LPCVD, PLD and AIP, first forms a cushion 30 on sapphire chip body 10.
Further; can be as shown in Figures 4 to 6; heat treatment step S30 can carry out completing after buffer layer forming step S50; carry out again protective layer and form step S40; also can heat-treat again step S30 completing after buffer layer forming step S50 and protective layer form step S40; more widely, can also respectively carry out heat treatment step S30 one time at image transfer step S20, buffer layer forming step S50 and protective layer formation step S40.
Technical characterictic of the present invention is mainly; application forms the conventional sapphire wafer of light emitting diode; be formed on upper surface and have the sapphire chip body of micro-structural in semi-conductive image transfer mode; due to sapphire chip body have specific axis to; and reduce defect through Overheating Treatment, and form protective layer thereon.So, except the height that reaches micro-structural evenly, difficult drop-off, more reach machinery and chemical abrasion resisting, effect against corrosion by protective layer, and effectively solve the problem facing in prior art.
As described above is only in order to explain preferred embodiment of the present invention; not attempt is done any pro forma restriction to the present invention according to this; therefore, all have under identical invention spirit, do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protection.

Claims (11)

1. a polishing pad trimmer structure, is characterized in that, comprises:
One sapphire chip body, for have a specific axis to chip, and on its upper surface, there are multiple micro-structurals; And
One protective layer, is a diamond film or a quasi cobalt carbon diaphragm, covers the upper surface of this sapphire body,
Wherein this specific axis to be a axially, c-axis to, r is axial, m is axial, n is axial and v is axial one of them, and the height error of described micro-structural is less than 5% of an average height.
2. polishing pad trimmer structure as claimed in claim 1, is characterized in that, further comprises a cushion, and this cushion is arranged between this sapphire chip body and this protective layer.
3. polishing pad trimmer structure as claimed in claim 2, it is characterized in that, this cushion is aluminium oxide, titanium oxide, the aluminium oxide titania mixture of titanium, platinum, copper, chromium, nickel, silicon nitride, silicon oxynitride, Doped with Titanium, and graphite at least one of them.
4. polishing pad trimmer structure as claimed in claim 1, is characterized in that, the face shaping of described micro-structural is symmetrical tack cone post, symmetrical tip cone post, asymmetric tack cone post, or asymmetric tip cone post.
5. a preparation method for polishing pad trimmer structure, is characterized in that, comprises:
One chip unit forms step, by raw material after high temperature furnace melt, in specific axis to crystal seed crystal pulling, and form a specific axis to a crystal bar, then by this crystal bar section obtain having this specific axis to a sapphire chip;
One image transfer step in the mode of image transfer, forms multiple micro-structurals on a upper surface of this sapphire chip, completes a sapphire chip body;
One protective layer forms step, on this upper surface of this sapphire chip body, forms a protective layer, completes this polishing pad trimmer structure; And
At least one heat treatment step; to there is this jewel chip body and put into a high temperature furnace and carry out a heat treatment, to repair lattice defect and/or to increase protective layer adhesive force, this at least heat treatment step after this image transfer step; and/or carry out after protective layer formation step
Wherein this specific axis to be a axially, c-axis to, r is axial, m is axial, n is axial and v is axial one of them, and the height error of described micro-structural is less than 5% of an average height.
6. preparation method as claimed in claim 5; it is characterized in that; it is with sputter, Metalorganic chemical vapor deposition, the chemical vapour deposition (CVD) of electricity slurry, low-pressure chemical vapor deposition, pulsed laser deposition that this protective layer forms step, and one of them of arc ions evaporation forms this protective layer in this upper surface of this sapphire chip body.
7. preparation method as claimed in claim 5, is characterized in that, the face shaping of described micro-structural is symmetrical tack cone post, symmetrical tip cone post, asymmetric tack cone post, or asymmetric tip cone post.
8. preparation method as claimed in claim 5; it is characterized in that; further before forming step, protective layer first carries out a buffer layer forming step; upper surface at this sapphire chip body first forms a cushion, and wherein this cushion is formed with one of them of evaporation, sputter, MOCVD, PECVD, LPCVD, PLD and AIP.
9. preparation method as claimed in claim 8, is characterized in that, this cushion is aluminium oxide, titanium oxide, the aluminium oxide titania mixture of titanium, platinum, copper, Doped with Titanium, and graphite at least one of them.
10. preparation method as claimed in claim 5, is characterized in that, this heat treatment step is by this sapphire chip completing after this image transfer step, puts into a high temperature furnace, be warming up to 1000 DEG C~1800 DEG C maintain 1~8 hour after stove cold.
11. preparation methods as claimed in claim 8, is characterized in that, further before this buffer layer forming step or/after carry out again a heat treatment step.
CN201310603381.8A 2013-04-08 2013-11-26 Polishing pad dresser structure and manufacturing method thereof Expired - Fee Related CN104097146B (en)

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TW102112375A TWI546156B (en) 2013-04-08 2013-04-08 Polishing pad dresser structure and its making method
TW102112375 2013-04-08

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114267761A (en) * 2021-12-22 2022-04-01 广东中图半导体科技股份有限公司 Composite patterned substrate for LED growth, epitaxial wafer and preparation method

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Publication number Priority date Publication date Assignee Title
JP2007044823A (en) * 2005-08-10 2007-02-22 Soken:Kk Cmp pad conditioner in semiconductor planarization cmp process (chemical-mechanical polishing)
US20070259609A1 (en) * 2004-03-31 2007-11-08 Hiroshi Iiyoshi Cmp Conditioner
US20100035022A1 (en) * 2008-08-06 2010-02-11 Jer-Liang Andrew Yeh Substrate with High Fracture Strength
CN102069453A (en) * 2009-11-24 2011-05-25 陈荣方 Sharpener trimmer with protection film and forming method of protection film
CN102343547A (en) * 2011-10-20 2012-02-08 天津理工大学 Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution
KR20120026709A (en) * 2010-09-10 2012-03-20 신한다이아몬드공업 주식회사 Cmp pad conditioner and its manufacturing method
JP2012213833A (en) * 2011-03-31 2012-11-08 Shingijutsu Kaihatsu Kk Sintered body for pad conditioning and its manufacturing method
CN202794802U (en) * 2012-01-18 2013-03-13 鑫晶钻科技股份有限公司 Image capture apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070259609A1 (en) * 2004-03-31 2007-11-08 Hiroshi Iiyoshi Cmp Conditioner
JP2007044823A (en) * 2005-08-10 2007-02-22 Soken:Kk Cmp pad conditioner in semiconductor planarization cmp process (chemical-mechanical polishing)
US20100035022A1 (en) * 2008-08-06 2010-02-11 Jer-Liang Andrew Yeh Substrate with High Fracture Strength
CN102069453A (en) * 2009-11-24 2011-05-25 陈荣方 Sharpener trimmer with protection film and forming method of protection film
KR20120026709A (en) * 2010-09-10 2012-03-20 신한다이아몬드공업 주식회사 Cmp pad conditioner and its manufacturing method
JP2012213833A (en) * 2011-03-31 2012-11-08 Shingijutsu Kaihatsu Kk Sintered body for pad conditioning and its manufacturing method
CN102343547A (en) * 2011-10-20 2012-02-08 天津理工大学 Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution
CN202794802U (en) * 2012-01-18 2013-03-13 鑫晶钻科技股份有限公司 Image capture apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114267761A (en) * 2021-12-22 2022-04-01 广东中图半导体科技股份有限公司 Composite patterned substrate for LED growth, epitaxial wafer and preparation method
CN114267761B (en) * 2021-12-22 2023-10-20 广东中图半导体科技股份有限公司 Composite patterned substrate for LED growth, epitaxial wafer and preparation method

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Publication number Publication date
CN104097146B (en) 2017-06-09
TW201438846A (en) 2014-10-16
TWI546156B (en) 2016-08-21

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