CN104091863B - Remove the method that LED core particle carries on the back coating - Google Patents
Remove the method that LED core particle carries on the back coating Download PDFInfo
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- CN104091863B CN104091863B CN201410325865.5A CN201410325865A CN104091863B CN 104091863 B CN104091863 B CN 104091863B CN 201410325865 A CN201410325865 A CN 201410325865A CN 104091863 B CN104091863 B CN 104091863B
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- 239000007771 core particle Substances 0.000 title claims abstract description 232
- 238000000576 coating method Methods 0.000 title claims abstract description 60
- 239000011248 coating agent Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000007788 liquid Substances 0.000 claims abstract description 51
- 238000005530 etching Methods 0.000 claims abstract description 32
- 238000004018 waxing Methods 0.000 claims abstract description 26
- 239000012528 membrane Substances 0.000 claims abstract description 17
- 238000007654 immersion Methods 0.000 claims abstract description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 12
- 229910010272 inorganic material Inorganic materials 0.000 claims description 12
- 239000011147 inorganic material Substances 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 abstract description 12
- 230000007797 corrosion Effects 0.000 description 14
- 238000005260 corrosion Methods 0.000 description 14
- 239000011651 chromium Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 229910052804 chromium Inorganic materials 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- 230000006378 damage Effects 0.000 description 8
- 238000002791 soaking Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 206010021703 Indifference Diseases 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Led Devices (AREA)
Abstract
The invention provides a kind of remove the method that LED core particle carries on the back coating, the back side setting back of the body coating of LED core particle, comprise the following steps：1) pad pasting：The back side of LED core particle is adhered in tearable membrane removal, obtains adhering to core particles；2) wax：Wax liquor is smeared in the front of LED core particle in adhesion core particles and side wall, and the front of LED core particle in adhesion core particles is fixed in fixed plate, afterwards tearable membrane removal is removed, obtain core particles of waxing；3) go to carry on the back coating：Soak in core particles of waxing immersion de-layer liquid, obtain de-layer core particles；4) dewax：De-layer core particles are placed in wax and the fixed plate removing LED core particle front and side wall in dewaxing liquid, obtain the LED core particle that dewaxes；Back of the body coating includes DBR layer, and DBR layer removes after being soaked in 1～5 minute in de-layer liquid.The method is removed to the back of the body coating on core particles surface using etching solution, by coordinate the back of the body coating in each element be etched speed and go carry on the back the plating time so that remove the back of the body coating after, properties in addition to brightness for the LED core particle are not affected.
Description
Technical field
The present invention relates to LED (light-emitting diodes light) chip field, especially, it is related to a kind of LED core particle that removes and carries on the back coating
Method.
Background technology
LED chip is a kind of semiconductor electronic component that can convert electrical energy into luminous energy.LED chip is with sapphire, silicon
Or carborundum, as substrate, grows GaN base material epitaxial layers thereon.When electric current flows through LED chip, electronics and hole exist
Occur in the epitaxial layer structure of LED chip to be combined and bill coloured light.LED illumination is widely used to each field of daily life.
For increasing the brightness of LED chip, it is typically employed in LED chip back side setting DBR (Bragg reflecting layer) or ODR
(full-shape reflecting mirror) layer improving the reflectance of LED chip, thus improving brightness.
DBR layer is by two kinds of refractive indexs different materials alternately arranged periodicity forming in the way of A layer-B layer-A layer
Structure, the optical thickness of every layer material is the 1/4 of its center reflection wavelength.Commonly use what silicon oxide and titanium oxide alternateed at present
DBR layer structure, also has the dbr structure adding tantalum oxide.DBR layer is preferable to the light reflection effect of vertical incidence, and its reflectance can
Reach more than 99%.
ODR layer is arranged on DBR layer, is formed by evaporating Al on DBR layer, Cr, Au or other metal.
In actual production and R＆D process, often occur and lead to quality abnormal or because of reality because of technique or equipment fault
The situation tested demand and DBR layer and ODR layer must be removed.For example produce mistiming and the chip that need not carry on the back plating has been done back of the body plating, send out
During existing problem, chip has been already cut into core particles it is impossible to do over again according to a conventional method.It is sometimes desirable to by same specification core in R＆D process
Grain has done back of the body plating and no two kinds of contrast encapsulation of back of the body plating, to confirm back of the body plating effect.At present, there is not yet DBR or ODR in relevant core particles
Minimizing technology, once occur this fault just can only by product do price reduction process, thus bringing economic loss to enterprise.
Content of the invention
Present invention aim at providing a kind of method removing LED core particle back of the body coating, to solve cannot have in prior art
Effect removes the technical problem that LED core particle carries on the back coating.
For achieving the above object, the invention provides a kind of remove the method that LED core particle carries on the back coating, the back side of LED core particle
Setting back of the body coating, comprises the following steps：1) pad pasting：The back side of LED core particle is adhered in tearable membrane removal, obtains adhering to core particles；
2) wax：Wax liquor is smeared in the front of LED core particle in adhesion core particles and side wall, and will be solid for the front of LED core particle in adhesion core particles
It is connected in fixed plate, afterwards tearable membrane removal is removed, obtain core particles of waxing；3) go to carry on the back coating：Core particles of waxing immerse de-layer liquid
Middle immersion, obtains de-layer core particles；4) dewax：De-layer core particles are placed in the wax removing LED core particle front and side wall in dewaxing liquid and
Fixed plate, obtains the LED core particle that dewaxes；Back of the body coating includes DBR layer, and DBR layer removes after being soaked in 1～5 minute in de-layer liquid.
Further, back of the body coating, by being followed successively by the DBR layer that is stacked and placed on the LED core particle back side of growth or ODR layer forms, works as the back of the body
Coating is that during ODR layer, de-layer liquid includes corrosive liquid and etching solution, step 3) include：A) remove metal level：Core particles of waxing are soaked
Enter in corrosive liquid and soak, the ODR layer at the waxing core particles back side is removed, obtains the first de-layer core particles；B) remove inorganic material layer：Will
Soak in first de-layer core particles immersion etching solution, DBR layer is removed, obtains de-layer core particles.
Further, the first de-layer core particles are immersed in etching solution and soak 2～3 minutes.
Further, the first de-layer core particles are once purged enters back into b) in step.
Further, etching solution is BOE solution.
Further, step 1) in, the back side of multiple LED core particle is adhered in same tearable membrane removal simultaneously.
Further, step 2) in, also include before the step removing tearable membrane removal：Raise the temperature of fixed plate, and solid
Liquid wax layer is arranged on fixed board surface, the front of adhesion core particles is adhered in the liquid wax layer in fixed plate, reduces fixed plate
Temperature, make liquid wax layer solidify.
Further, also include the step that dewaxing LED core particle is carried out and dries.
Further, in baking step, drying temperature is 50～70 DEG C.
Further, isopropanol is adopted to clean 5-15 minute in cleaning step.
The invention has the advantages that：
The method that the removal LED core particle that the present invention provides carries on the back coating is gone to the back of the body coating on core particles surface using etching solution
Remove, by coordinate the back of the body coating in each component be etched speed and go carry on the back the plating time so that remove the back of the body coating after, LED core particle is removed
Properties outside brightness are not affected.Can guarantee that the LED core particle after removing back of the body coating can directly return normal procedure and enter
Row subsequent production, ensures that the luminosity of the LED chip for experimentation has comparability simultaneously.
In addition to objects, features and advantages described above, the present invention also has other objects, features and advantages.
Below with reference to figure, the present invention is further detailed explanation.
Brief description
The accompanying drawing constituting the part of the application is used for providing a further understanding of the present invention, the schematic reality of the present invention
Apply example and its illustrate, for explaining the present invention, not constituting inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 is the schematic flow sheet of the preferred embodiment of the present invention.
Specific embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are described in detail, but the present invention can be defined by the claims
Implement with the multitude of different ways covering.
Referring to Fig. 1, the method that the removal LED core particle that the present invention provides carries on the back coating comprises the following steps：
1) pad pasting：The back side of multiple LED core particle is adhered in tearable membrane removal, obtains adhering to core particles；
2) wax：Wax liquor is smeared in the front of adhesion core particles and side wall, and the front of adhesion core particles is fixed in fixed plate
On, afterwards tearable membrane removal is removed, obtain core particles of waxing；
3) go to carry on the back coating：In core particles of waxing immersion de-layer liquid, soak, obtain de-layer core particles；
4) dewax：De-layer core particles are placed in wax and the fixed plate removing LED core particle front and side wall in dewaxing liquid, are gone
Layer LED core particle.
The present invention mentions method and collects the LED core particle needing to remove back of the body coating first, and its front is fixed in can
Remove on film.Tearable membrane removal can be the conventional LED chip production films such as blue film, will not injure LED core when tearable membrane removal removes
The backside structure of grain.Only play the effect of fixing multiple LED core particle positions.So that subsequent operation is carried out.
Gained is adhered to the front of core particles and wax liquor smeared by side wall, after wax liquor is smeared in the front of adhesion core particles, there is adhesion
Property, fixed plate can be adhered to the front of adhesion core particles, the position of adhesion core particles is fixed.Go back before removing tearable membrane removal step
Comprise the following steps：Plate surface setting liquid wax layer will be fixed, the front of adhesion core particles will be adhered to the liquid wax in fixed plate
In layer, reduce the temperature of fixed plate, so that liquid wax layer is solidified.Fixed plate can be for arbitrarily bearing the flat of follow-up de-layer corrosion
Plate, it is preferred to use discarded LED chip.After fixed plate will be fixing for the front adhering to core particles, tearable membrane removal be removed, now glues
The back side of attached core particles is exposed, is easy to subsequently go to carry on the back plating operation.The side wall of adhesion core particles and the gap connecting with fixed plate simultaneously
Protected by applied wax liquor, it is to avoid when subsequently removing to carry on the back coating, the destruction to LED core particle Facad structure for the de-layer liquid.Arrange before
Tearable membrane removal can also protect the back of the body coating of LED core particle, when preventing waxing, wax liquor pollutes to it, once the back of the body of LED core particle
Coating is polluted by wax liquor, subsequently goes back of the body plating steps will be difficult to remove it.
De-layer process will be carried out in waxing core particles immersion de-layer liquid.Now select corresponding de-layer liquid will to carry on the back plating as needed
Layer removes, and back of the body coating removes completely, and does not corrode disengaging de-layer liquid during the epitaxial layer structure of LED core particle, obtains de-layer core particles.
The back side setting back of the body coating of LED core particle is DBR layer or ODR layer.DBR layer is to be intersected by least two different inorganic material to be stacked
Repeatedly form.As with SiO2And TiO2It is stacked as a unit.Fully this unit repeatedly obtains DBR layer.ODR layer is at least two
Plant when different inorganic material intersect the stacked inorganic layer repeatedly being formed and be additionally provided with metal level.Inorganic layer in ODR layer and DBR layer
Structure is identical.
When it is to carry on the back coating that the handled LED core particle back side is set to ODR layer, first using the corrosion with this metal level of corrosion
Metal level is removed by liquid, then is removed inorganic material layer with etching solution.When the handled LED core particle back side only arranges DBR layer, adopt
Removed it with etching solution.Soak and removed completely with the back of the body coating of LED core particle, and do not etch the epitaxial layer structure of LED core particle and be
Preferably.
Preferred steps 3) further comprising the steps of：
A) remove metal level：In core particles of waxing immersion corrosive liquid, the ODR layer at the waxing core particles back side is removed, obtains the
One de-layer core particles；
B) remove inorganic material layer：First de-layer core particles are immersed in etching solution, DBR layer is removed, obtains de-layer core particles.
De-layer liquid includes removing the corrosive liquid of metal level and removes DBR layer, the etching solution of inorganic material layer.Can root
Species according to the metal level of required removal selects corresponding corrosive liquid, when metal level is for gold or aluminum, carries out corruption using chloroazotic acid
Etching off removes.Layers of chrome adopts chromium etching solution to remove.Because LED core particle surrounding all obtains the protection of wax liquor, thus removing this layer
During, structural damage will not be subject to.It is additionally provided with inorganic material layer in ODR layer bottom surface, inorganic material layer is entered using etching solution
Row removes.Now the back of the body coating of LED core particle removes completely, and the epitaxial layer structure of LED core particle is not affected by any corrosion, thus protecting
Stay the complete performance of LED core particle.
Preferably removing corrosive liquid used by chromium is chromium corrosive liquid, removes other metal chloroazotic acid such as aluminum, gold, can protect after removal
After card corrosion, the other structures of LED core particle are not damaged, it is to avoid the impact to LED core particle brightness.
Etching solution preferably used can be conventional etching solution, and preferably etching solution is BOE solution.BOE solution presses body by NH4 and HF
Long-pending ratio is 9: 1 mixing.While abundant removing DBR layer be can guarantee that using the etching solution of this concentration, do not damage the knot of LED core particle
Structure.And low price, obtain easily, easy to use.
Etching solution preferably used is BOE (Buffer Oxide Etche) by NH4：HF is mixed to get for 9: 1 by volume.
Using this etching solution, etching end point is easily controllable.
A) also need after step the first de-layer core particles to be carried out, to reduce the interference to subsequent step for the corrosive liquid used.
In order to ensure ODR layer and DBR layer are removed completely in immersion process.According to the corrosion speed to respective metal for the acid used
Rate calculates corresponding soak time, thus avoiding due to long soaking time causing corrosion liquid, LED core kernel structure being broken
Bad effect.Such as when ODR layer is Au or Al, using chloroazotic acid, it is corroded.Chloroazotic acid hydrochloric acid and nitric acid mixed preparing and
Become, hydrochloric acid is 3: 1 with the volume ratio of nitric acid.The speed of the corrosion Au of chloroazotic acid is per second for 5 angstroms -8 angstroms, and the speed that chloroazotic acid corrodes Al is
30 angstroms -60 angstroms per second.Remove Cr and adopt commercially available chromium etching solution, be 50～80 DEG C using temperature, the speed of corrosion chromium is 4 angstroms -7 angstroms
Per second.
Metal level common used material：Al、Cr、Au.When above-mentioned material is stacked, often need to be using previous material as base in growth course
Plinth grows latter material.Because of the type of each manufacturer, the process conditions of evaporation, the number of plies of SiO2 and TiO2 and compactness, gold
The thickness belonging to layer is different, it is difficult to be analyzed to it according to the performance of current material during removal.Excessive erosion often occurs
Carve, cause the harmful effect to LED core particle core particles.The application passes through to coordinate the soak time that etching removes ODR layer, is ensureing to go
In the case of this mosaic coating, it is to avoid the destruction to LED core particle.When preferably removing DBR layer, soak time is 1～5 minute.By this
Condition is soaked and is not lost other parameters in addition to brightness for the gained LED core particle completely while can guarantee that abundant removal DBR layer.More excellent
Select soak time to be 2～3 minutes, using this soak time, gained LED core particle other parameters except brightness in addition to can be fully retained.
The acquisition of soak time can not be obtained by the corrosion rate of known etching solution and required corrosion layer thickness, because corrosion process
Middle corroded DBR layer is mixed layer, and multiple different components intersections are stacked, and etching solution cannot be unified to its etch capabilities.Inventor
Find, by adjusting soak time, to be avoided that etching solution produces excessive local erosion or office to the ODR layer being made of a variety of materials
Incomplete problem is corroded in portion.Properties in addition to brightness for the LED core particle after simultaneously can also making to remove back of the body coating reach not
There is the standard of the LED core particle of setting back of the body coating.
Soaking temperature is determined using temperature according to the routine of de-layer liquid used.Preferably soaking temperature is room temperature.In this temperature
Go down to carry on the back coating, can guarantee that the corrosion rate of etching solution used is worked in coordination with handled LED core particle and reach optimum, can be quickly rotten
Erosion, is avoided that excessive corrosion to LED core particle structural damage again.Etching solution is all kinds of etchings commonly used in the prior art simultaneously
Liquid, such as BOE solution.
Dewaxing：De-layer core particles are placed in wax and the fixed plate removing LED core particle front and side wall in dewaxing liquid, obtain de-layer
LED core particle.Dewaxing liquid used can for go wax liquor or have wax effect remove glue.Because fixed plate passes through wax liquor by LED
Core particles are connected, thus after entering de-layer core particles in dewaxing liquid, multiple LED core particle adhered thereto are from fixed plate
Come off.Preferably hydrodewaxing step conditional is to go wax liquid temperature to be 150～200 DEG C, and the dewaxing time is 10～20 minutes.In this temperature
Under dewaxed, being avoided that excessive dewaxing leads to, to LED core particle structural damage, then reduce brightness of gained LED core particle etc.
Properties.
After collecting gained dewaxing LED core particle, it is carried out, it is preferred to use isopropanol is carried out 10 minutes with will be front
State classes of agents the corrosiveness of LED core particle is removed.Post-drying cleaning after core particles i.e. obtain remove the back of the body coating LED core
Grain.Preferably drying temperature is 50～70 DEG C, dries at this temperature, both can guarantee that the structure of gained LED core particle is injury-free, and
Can guarantee that isopropanol is quick to volatilize completely.
Provided by the present invention method is simple, can fully meet and remove the needs that LED core particle carries on the back coating, using the method
Each structure of the LED core particle that can adequately protect, the brightness of LED core particle after simultaneously ensureing to remove back of the body coating is not provided with carrying on the back coating relatively
LED core particle decay to 0.
Embodiment
In following examples material therefor and equipment be commercially available.
There is used by following examples and comparative example the LED core particle of back of the body coating：Brightness is 140.5～142.5mW, voltage is
3.33～3.34V, wavelength are 452.5～453.5nm.This LED core particle derives from a piece of epitaxial wafer.The LED core particle back side is provided with DBR
Layer is by 11 layers of SiO2And TiO2Alternate growth to obtain.In DBR layer, each thickness degree and its composition are listed in Table 1 below.
Each thickness degree and its composition in table 1 DBR layer
BOE solution is by NH4Mix for 9: 1 by volume with HF.
ODR layer is first to be deposited with SiO2And TiO2It is alternately superimposed on the inorganic material layer forming.Gold evaporation again on inorganic material layer
Belong to layer to form.Metal composition from the inside to surface is followed successively by aluminum, chromium, gold, and thickness is 2000 angstroms -4000 angstroms of aluminum, 100 angstrom -300 of chromium
Angstrom, 200 angstroms -500 angstroms of gold.
Blank example：
It is prepared using identical method with LED core particle handled in embodiment, properties identical LED core particle,
This LED core particle back side is not provided with carrying on the back coating, as blank LED core particle.
Embodiment 1
30 LEDs core particles are arbitrarily selected to remove back of the body coating by following steps.
1) blueing film is pasted at the back side in LED core particle, obtains adhering to core particles；
2) one piece of epitaxial wafer scrapped is placed on heater and uses as fixed plate, be heated to 100 DEG C, by rod wax
Fixed plate is gently streaked, liquid wax layer is formed on fixed plate；
3) adhesion core particles front is attached in the fixed plate of liquid wax, now LED core particle front is contacted with wax, core particles are carried on the back
Face is contacted with blue film；
4) fixed plate is taken off from heater and be cooled to room temperature, after wax solidification, blue film is torn off, obtain core particles of waxing；
5) waxing core particles are immersed in removal DBR layer in BOE solution, soaking temperature is room temperature, soak time 1 minute obtains
To de-layer core particles.
6) de-layer core particles are placed in 150 DEG C to go 10 minutes in wax liquor, obtain the LED core particle that dewaxes.
7) the LED core particle taking-up isopropanol that will dewax cleans 10 minutes at room temperature；Dry at 50 DEG C and obtain LED core particle.
Embodiment 2
30 LEDs core particles are arbitrarily selected to remove back of the body coating by following steps.
1) blueing film is pasted at the back side in LED core particle, obtains adhering to core particles；
2) one piece of epitaxial wafer scrapped is placed on heater and uses as fixed plate, be heated to 200 DEG C, by rod wax
Fixed plate is gently streaked, liquid wax layer is formed on fixed plate；
3) adhesion core particles front is attached in the fixed plate of liquid wax, now LED core particle front is contacted with wax, core particles are carried on the back
Face is contacted with blue film；
4) fixed plate is taken off from heater and be cooled to room temperature, after wax solidification, blue film is torn off, obtain core particles of waxing；
5) waxing core particles are immersed in removal DBR layer in BOE solution, soaking temperature is room temperature, soak time 5 minutes obtains
To de-layer core particles.
6) de-layer core particles are placed in 200 DEG C to go 20 minutes in wax liquor, obtain the LED core particle that dewaxes.
7) the LED core particle taking-up isopropanol that will dewax cleans 10 minutes at room temperature；Dry at 70 DEG C and obtain LED core particle.
Embodiment 3
30 LEDs core particles are arbitrarily selected to remove back of the body coating by following steps.
1) blueing film is pasted at the back side in LED core particle, obtains adhering to core particles；
2) one piece of epitaxial wafer scrapped is placed on heater and uses as fixed plate, be heated to 150 DEG C, by rod wax
Fixed plate is gently streaked, liquid wax layer is formed on fixed plate；
3) adhesion core particles front is attached in the fixed plate of liquid wax, now LED core particle front is contacted with wax, core particles are carried on the back
Face is contacted with blue film；
4) fixed plate is taken off from heater and be cooled to room temperature, after wax solidification, blue film is torn off, obtain core particles of waxing；
5) waxing core particles are immersed in removal DBR layer in BOE solution, soaking temperature is room temperature, soak time 2 minutes obtains
To de-layer core particles.
6) de-layer core particles are placed in 175 DEG C to go 12 minutes in wax liquor, obtain the LED core particle that dewaxes.
7) the LED core particle taking-up isopropanol that will dewax cleans 10 minutes at room temperature；Dry at 60 DEG C and obtain LED core particle.
Embodiment 4
30 LEDs core particles are arbitrarily selected to remove back of the body coating by following steps.
1) blueing film is pasted at the back side in LED core particle, obtains adhering to core particles；
2) one piece of epitaxial wafer scrapped is placed on heater and uses as fixed plate, be heated to 200 DEG C, by rod wax
Fixed plate is gently streaked, liquid wax layer is formed on fixed plate；
3) adhesion core particles front is attached in the fixed plate of liquid wax, now LED core particle front is contacted with wax, core particles are carried on the back
Face is contacted with blue film；
4) fixed plate is taken off from heater and be cooled to room temperature, after wax solidification, blue film is torn off, obtain core particles of waxing；
5) waxing core particles are immersed in removal DBR layer in BOE solution, soaking temperature is room temperature, soak time 3 minutes obtains
To de-layer core particles.
6) de-layer core particles are placed in 200 DEG C to go 20 minutes in wax liquor, obtain the LED core particle that dewaxes.
7) the LED core particle taking-up isopropanol that will dewax cleans 10 minutes at room temperature；Dry at 65 DEG C and obtain LED core particle.
Embodiment 5
30 LEDs core particles are arbitrarily selected to remove back of the body coating by following steps.
1) blueing film is pasted at the back side in LED core particle, obtains adhering to core particles；
2) one piece of epitaxial wafer scrapped is placed on heater and uses as fixed plate, be heated to 150 DEG C, by rod wax
Fixed plate is gently streaked, liquid wax layer is formed on fixed plate；
3) adhesion core particles front is attached in the fixed plate of liquid wax, now LED core particle front is contacted with wax, core particles are carried on the back
Face is contacted with blue film；
4) fixed plate is taken off from heater and be cooled to room temperature, after wax solidification, blue film is torn off, obtain core particles of waxing；
5) waxing core particles are first soaked in chloroazotic acid removing the ODR layer being made up of gold, soak time is 2 minutes,
Soak at room temperature；
Immerse again afterwards in BOE solution, soaking temperature is room temperature, soak time 2 minutes obtains de-layer core particles.
6) de-layer core particles are placed in 160 DEG C to go 17 minutes in wax liquor, obtain the LED core particle that dewaxes.
7) the LED core particle taking-up isopropanol that will dewax cleans 10 minutes at room temperature；Dry at 67 DEG C and obtain LED core particle.
Comparative example 1
Difference with embodiment 3 is：Soak time is 6 minutes.Obtain LED core particle.
Comparative example 2
Difference with embodiment 3 is：Soak time is 0.5 minute.Obtain LED core particle.
In embodiment 1～5 and comparative example 1～2, gained LED core particle and blank LED core particle, observe outer under an optical microscope
See.Gained LED core particle point is surveyed with its brightness, voltage, wavelength, each LED core particle brightness, the difference of voltage, wavelength and blank LED core particle
Value.Acquired results are listed in Table 2 below.
Table 2 embodiment 1～5 and the properties contrast table of comparative example 1～2 gained LED core particle and blank LED core particle
| Sequence number | Outward appearance | Luminance difference | Voltage | Institute's emission wavelength |
| Embodiment 1 | Indifference | 0 | 0 | 0 |
| Embodiment 2 | Indifference | 0 | 0 | 0 |
| Embodiment 3 | Indifference | 0 | 0 | 0 |
| Embodiment 4 | Indifference | 0 | 0 | 0 |
| Embodiment 5 | Indifference | 0 | 0 | 0 |
| Comparative example 1 | Epitaxial layer damages substantially | -140.5mW | Cannot conducting electric current | Unglazed send |
| Comparative example 2 | Remain imperfect back of the body coating | -4.215mW | 3.34V | 453.5nm |
From table 2, the back of the body coating of LED core particle can be removed complete, simultaneously to LED core by the method being provided using the present invention
The epitaxial layer structure of grain is had no effect, and has no to distinguish with the structure of blank LED core particle, illustrates this structure not to be caused substantially to damage
Wound.And using the present invention provide method process after, the brightness of gained LED core particle, voltage, emission wavelength and be not provided with the back of the body plating
The LED core particle performance of layer is identical, illustrates that the method providing using the present invention can be prevented effectively from back of the body plating steps to LED core
The harmful effect of the properties of grain.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.All within the spirit and principles in the present invention, made any repair
Change, equivalent, improvement etc., should be included within the scope of the present invention.
Claims (9)
1. a kind of method removing LED core particle back of the body coating, the back side setting back of the body coating of described LED core particle is it is characterised in that include
Following steps：
1) pad pasting：The back side of described LED core particle is adhered in tearable membrane removal, obtains adhering to core particles；
2) wax：The front of LED core particle and side wall described in described adhesion core particles are smeared wax liquor, and by described adhesion core particles
The front of described LED core particle is fixed in fixed plate, removes described tearable membrane removal afterwards, obtains core particles of waxing；
3) go to carry on the back coating：Described waxing core particles are soaked and removes back of the body coating, obtain de-layer core particles；
4) dewax：Described de-layer core particles are placed in and in dewaxing liquid, remove the wax in described LED core particle front and side wall and described fixation
Plate, obtains the LED core particle that dewaxes；
Described back of the body coating is DBR layer or the ODR layer being grown on the described LED core particle back side, and described ODR layer is by inorganic material layer and gold
Belong to layer composition；
When described the back of the body coating be DBR layer when, described step 3) soak remove the back of the body coating step include：
Described waxing core particles are immersed in etching solution and remove described DBR layer, soak time is 1～5 minute；
When described the back of the body coating be ODR layer when, described step 3) soak remove the back of the body coating step include：
A) described waxing core particles are immersed in corrosive liquid to remove and after described metal level, obtain the first de-layer core particles；
B) described first de-layer core particles are immersed in described etching solution and remove described inorganic material layer and obtain described de-layer core particles.
2. method according to claim 1 is it is characterised in that 2 will be soaked in described first de-layer core particles immersion etching solution
～3 minutes.
3. method according to claim 2 enters back into b) step it is characterised in that described first de-layer core particles are once purged
In.
4. method according to claim 3 is it is characterised in that described etching solution is BOE solution.
5. method according to claim 4 is it is characterised in that described step 1) in, simultaneously by multiple described LED core particle
The back side adheres in same tearable membrane removal.
6. method according to claim 1 is it is characterised in that described step 2) in, the step that removes described tearable membrane removal
Front also include：Raise the temperature of described fixed plate, and liquid wax layer is set in described fixing plate surface, by described adhesion core particles
Front adhere in the liquid wax layer in described fixed plate, reduce described fixed plate temperature, make liquid wax layer solidify.
7. the method according to any one of claim 1～6 is it is characterised in that also include described dewaxing LED core particle is entered
Row cleaning and the step dried.
8. method according to claim 7 it is characterised in that in described baking step drying temperature be 50～70 DEG C.
9. method according to claim 7 is it is characterised in that divided using isopropanol cleaning 5-15 in described cleaning step
Clock.
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| CN105590996A (en) * | 2016-02-23 | 2016-05-18 | 河源市众拓光电科技有限公司 | Method of preventing corrosion of vertical structure LED substrate during wet stripping process |
| CN105576093B (en) * | 2016-02-23 | 2018-02-02 | 河源市众拓光电科技有限公司 | Method for stripping chip epitaxial substrate |
| CN107623060B (en) * | 2017-09-06 | 2019-10-25 | 佛山市国星半导体技术有限公司 | A kind of production method removing DBR film layer |
| CN108133981A (en) * | 2017-10-31 | 2018-06-08 | 华灿光电(苏州）有限公司 | A kind of reworking method of light-emitting diode chip for backlight unit |
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| CN1787172A (en) * | 2004-12-08 | 2006-06-14 | 方大集团股份有限公司 | Method for adhering piece in working procedure for reducing thin of sapphire substrate |
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