CN104091862B - Semiconductor optoelectronic element and preparation method thereof - Google Patents
Semiconductor optoelectronic element and preparation method thereof Download PDFInfo
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- CN104091862B CN104091862B CN201410319735.0A CN201410319735A CN104091862B CN 104091862 B CN104091862 B CN 104091862B CN 201410319735 A CN201410319735 A CN 201410319735A CN 104091862 B CN104091862 B CN 104091862B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 222
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 52
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
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- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
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- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
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- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
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- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- 238000000338 in vitro Methods 0.000 description 2
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of semiconductor optoelectronic element and preparation method thereof.The semiconductor optoelectronic element includes operation substrate；Semiconductor epitaxial hierarchical element, is arranged on operation substrate；Semiconductor epitaxial hierarchical element includes being arranged on operation substrate, the first semiconductor material layer with the first conductive characteristic, and is arranged on the first semiconductor material layer, the second semiconductor material layer with the second conductive characteristic；Transparency conducting layer, it is arranged on the second semiconductor material layer, transparency conducting layer includes first surface, directly contact portion, it is arranged on first surface, with the second semiconductor material layer directly contact, second surface, the parallel first surface of essence, directly contact correspondence portion, are arranged at second surface relative in directly contact portion；And first electrode, it is arranged on operation substrate, by transparency conducting layer and semiconductor epitaxial lamination electrical connection；Wherein, first electrode passes through the mutual electrical connection in region of the directly contact portion with directly contact outside corresponding portion with transparency conducting layer.
Description
The application is a divisional application, and the Application No. 201010249195.5 of corresponding female case, the applying date is 2010 8
The moon 6, entitled " semiconductor optoelectronic element and preparation method thereof " applies for artificial Jingyuan Photoelectricity Co., Ltd.
Technical field
The present invention relates to a kind of semiconductor optoelectronic element and preparation method thereof, carrying is arranged at more particularly, to one kind transfer
The preparation method of semiconductor optoelectronic element and this semiconductor optoelectronic element on operation substrate.
Background technology
As science and technology is maked rapid progress, semiconductor optoelectronic element has great tribute in the transmission of information and the conversion of energy
Offer.By taking the utilization of system as an example, such as optical-fibre communications, optical storage and military system etc., semiconductor optoelectronic element all can be
Play.Made a distinction with the conversion regime of energy, semiconductor optoelectronic element generally can be divided into three classes：Convert electrical energy into the hair of light
Penetrate, such as light emitting diode and laser diode；The signal of light is converted to the signal of electricity, such as photodetector；By the radiation energy of light
Be converted to electric energy, such as solar cell.
Among semiconductor optoelectronic element, growth substrate plays very important role.Form semiconductor optoelectronic element
Necessary semiconductor extension structure is all grown on substrate, and produces the effect supported by substrate.Therefore, one is selected
Suitable growth substrate, often as the key factor for determining element growth quality in semiconductor optoelectronic element.
However, not necessarily one good element bearing substrate of the good element growth substrate of sometimes one.With luminous two
As a example by pole pipe, in known feux rouges component technology, for the growth quality of lift elements, lattice parameter and semiconductor can be selected
Epitaxial structure is closer to but opaque GaAs substrates are used as growth substrate.However, for the hair to give out light to operate purpose
For optical diode element, among operating process, opaque growth substrate can but cause the luminous efficiency of element to decline.
In order to meet requirement of the semiconductor optoelectronic element for growth substrate and bearing substrate different demands condition, substrate
Transfer techniques then in response to and give birth to.That is, semiconductor extension structure on growth substrate prior to being grown, then will grow what is completed
Semiconductor extension structure is transferred to bearing substrate, to facilitate follow-up element operation to carry out.In semiconductor extension structure and carrying
After substrate is combined, the removal of original growth substrate then turns into one of key of this transfer techniques.
The removal mode of known growth substrate mainly includes etching original growth substrate with etching solution dissolving, with physics
Mode cuts removing, or generates sacrifice layer between growth substrate and semiconductor extension structure in advance, then sacrificial by etching removal
The mode of domestic animal layer separates growth substrate with semiconductor.However, whether dissolving substrate with etching solution or being cut with physical
The mode of cutting abrades substrate, is all a kind of destruction for original growth substrate.Growth substrate cannot be recycled, and emphasize ring
Guarantor and the modern times of energy-conservation, undoubtedly a kind of waste of material.If however, when being separated using sacrificial layer structure, for half
For conductor photoelectric cell, how to carry out effectively selectively transfer, be then one of direction of current research.
The content of the invention
For effectively selectively transfer semiconductor optoelectronic element, the present invention provides a kind of semiconductor optoelectronic element and its system
Make method, especially with respect to a kind of semiconductor optoelectronic element and this semiconductor optoelectronic element for shifting and being arranged on operation substrate
Preparation method.
Embodiments of the invention provide a kind of semiconductor optoelectronic element, including：Operation substrate；Semiconductor epitaxial lamination list
Unit, is arranged on operation substrate, including is arranged on operation substrate, the first semiconductor material layer with the first conductive characteristic,
And be arranged on the first semiconductor material layer, the second semiconductor material layer with the second conductive characteristic；Transparency conducting layer, if
It is placed on the second semiconductor material layer, transparency conducting layer includes first surface, directly contact portion, is arranged at first surface and with the
Two semiconductor material layer directly contacts, second surface, the parallel first surface of essence, directly contact correspondence portion, are arranged at the second table
Face is relative to directly contact portion；And first electrode, it is arranged on operation substrate, folded by transparency conducting layer and semiconductor epitaxial
Layer unit electrical connection；Wherein, first electrode and transparency conducting layer by directly contact portion with directly contact outside corresponding portion
The mutual electrical connection in region.
According to embodiments of the invention, semiconductor epitaxial hierarchical element also includes luminescent layer, is arranged at the first semiconductor material
Between the bed of material and the second semiconductor material layer.
According to embodiments of the invention, wherein, semiconductor optoelectronic element is light emitting diode.
According to embodiments of the invention, also including second electrode, operation substrate and semiconductor epitaxial hierarchical element are arranged at
Between or operation substrate relative to semiconductor epitaxial hierarchical element opposition side.
According to embodiments of the invention, wherein, the light transmittance of transparency conducting layer is more than 90%.
According to embodiments of the invention, wherein, semiconductor optoelectronic element is solar cell.
According to embodiments of the invention, wherein, electrically conducting transparent layer material is selected from by tin indium oxide, cadmium tin, oxidation
Zinc, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium, strontium oxide strontia copper, aluminum zinc oxide, zinc-gallium oxide and above-mentioned material appoint
The constituted group of meaning combination.
According to embodiments of the invention, also including multiple plain conductors, the straight of transparency conducting layer is extended to from first electrode
Contact correspondence portion.
According to embodiments of the invention, wherein there is above-mentioned plain conductor width to be less than 20 μm.
According to embodiments of the invention, wherein first electrode and above-mentioned plain conductor is different materials.
According to embodiments of the invention, the material of wherein first electrode is by titanium, aluminium, gold, chromium, nickel, germanium or above-mentioned material
The single or multiple lift metal structure that is constituted of any alloy.
According to embodiments of the invention, wherein operation substrate also has rough surface towards semiconductor epitaxial hierarchical element,
Rough surface includes an at least projection (Protrusion) and/or an at least pothole (Cavity).
Another embodiment of the present invention provides a kind of preparation method of semiconductor optoelectronic element, including provides growth substrate；
Sacrifice layer is formed on growth substrate；Semiconductor epitaxial is formed to be stacked on sacrifice layer；Separating semiconductor extension lamination is multiple
Semiconductor epitaxial hierarchical element simultaneously exposes the sacrifice layer under semiconductor epitaxial hierarchical element；Patterning photoresist is formed,
Covering part semiconductor epitaxial hierarchical element and barish sacrifice layer；Removal is not patterned the sacrificial of photoresist covering
Domestic animal layer；Transfer organization is provided, the removed semiconductor epitaxial hierarchical element of underlying sacrificial layer is transferred on transfer organization；There is provided
Operation substrate, with multiple electrodes region and multiple epitaxial regions, electrode zone is separated by with epitaxial region with specific range；Transfer
In semiconductor epitaxial hierarchical element to the epitaxial region for operating substrate on transfer organization；And multiple first electrodes are formed in behaviour
Make on the electrode zone of substrate, first electrode and with the semiconductor epitaxial hierarchical element electrical connection being transferred.
According to another embodiment of the present invention, the wherein material of growth substrate is selected from by sapphire (Al2O3), silicon (Si),
The group that carborundum (SiC), gallium nitride (GaN) and GaAs (GaAs) are constituted.
According to another embodiment of the present invention, the wherein material of growth substrate is selected from by PCB substrate and FR4 substrates institute group
Into group.
According to another embodiment of the present invention, wherein transfer organization is mainly and is made up of high-molecular organic material.
According to another embodiment of the present invention, also including forming adhesion coating in operation substrate and semiconductor epitaxial hierarchical element
Between, the material of adhesion coating is selected from the group that high-molecular organic material, metal material and metal alloy are constituted.
According to another embodiment of the present invention, wherein semiconductor epitaxial hierarchical element is LED epitaxial lamination area
And/or solar cell extension lamination region.
According to another embodiment of the present invention, also including the surface of roughening operation substrate, make surface prominent including at least one
Rise and/or an at least pothole.
According to another embodiment of the present invention, wherein the material of operation substrate is selected from by sapphire (Al2O3), silicon (Si),
The group that carborundum (SiC), aluminium nitride (AlN), gallium nitride (GaN) and GaAs (GaAs) are constituted.
According to another embodiment of the present invention, also including forming at least one second electrode in semiconductor epitaxial hierarchical element
With operation substrate between or operation substrate relative to semiconductor epitaxial hierarchical element opposition side.
According to another embodiment of the present invention, wherein transfer organization has a transitional surface, and surface has adherence and/or right
Should be in an at least projection of the removed semiconductor epitaxial hierarchical element of underlying sacrificial layer.
Another embodiment of the present invention provides a kind of light-emitting diode structure, including operation substrate, with surface, bag
Include multiple first epitaxial regions and multiple second epitaxial regions；Multiple first LED epitaxial hierarchical elements are arranged at the
In one epitaxial region, the first main radiation wavelength, any of which the first LED epitaxial hierarchical element operation repetitive can be radiated
First side on the surface of substrate, and the extended line on the first side has substantive the first extending direction being parallel to each other；Multiple second sends out
Optical diode extension lamination unit is arranged in the second epitaxial region, can radiate the second main radiation wavelength, and any of which second is sent out
Optical diode extension lamination unit have correspond to first while second while, and the extended line on the second side has essence mutually flat
The second capable extending direction；And first direction, the surface of operation repetitive substrate, wherein, the first extending direction and first direction
With angle theta1, the second extending direction and first direction have angle theta2, and θ1It is not equal to θ2。
According to another embodiment of the present invention, wherein the first main radiation wavelength is between 600nm to 650nm.
According to another embodiment of the present invention, wherein the first main radiation wavelength is between 510nm to 550nm.
According to another embodiment of the present invention, wherein the first main radiation wavelength is between 390nm to 440nm.
According to another embodiment of the present invention, wherein the first main radiation wavelength is not equal to the second main radiation wavelength.
According to another embodiment of the present invention, any of which the first LED epitaxial hierarchical element and any second hair
Optical diode extension lamination unit also includes semiconductor epitaxial lamination, is arranged on the surface of operation substrate, and semiconductor epitaxial is folded
Layer includes being arranged on the surface of operation substrate, the first semiconductor material layer with the first conductive characteristic；It is arranged at the first half
On conductor material layer, the second semiconductor material layer with the second conductive characteristic；And luminescent layer, it is arranged at the first semiconductor material
Between the bed of material and the second semiconductor material layer.
According to another embodiment of the present invention, any of which the first LED epitaxial hierarchical element and/or any
Two LED epitaxial hierarchical elements also include first electrode, are arranged at semiconductor epitaxial hierarchical element and correspond to operation base
Between the surface of the opposition side of plate, semiconductor epitaxial hierarchical element and operation substrate or operation substrate is relative to semiconductor epitaxial
The opposition side of hierarchical element.
Brief description of the drawings
Figure 1A is schematic diagram, shows the schematic side view of semiconductor optoelectronic element preparation method first step；
Figure 1B is schematic diagram, shows the schematic top plan view of semiconductor optoelectronic element preparation method first step；
Fig. 1 C are schematic diagram, the schematic side view that display is cut according to the C-C ' line segments of top view 1B；
Fig. 2 is schematic diagram, shows colorful display device schematic top plan view；
Fig. 3 A are schematic diagram, show the schematic top plan view of semiconductor optoelectronic element preparation method second step；
Fig. 3 B are schematic diagram, the second step schematic side view that display is cut according to the B-B ' line segments of top view 3A；
Fig. 3 C are schematic diagram, show the third step part schematic side view of semiconductor optoelectronic element preparation method；
Fig. 4 A are schematic diagram, show the four steps part schematic side view of semiconductor optoelectronic element preparation method；
Fig. 4 B are schematic diagram, show that the selective step side-looking of the four steps of semiconductor optoelectronic element preparation method is illustrated
Figure；
Fig. 4 C are schematic diagram, show that the selective step side-looking of the four steps of semiconductor optoelectronic element preparation method is illustrated
Figure；
Fig. 4 D are schematic diagram, show that the selective step side-looking of the four steps of semiconductor optoelectronic element preparation method is illustrated
Figure；
Fig. 4 E are schematic diagram, show that the selective step side-looking of the four steps of semiconductor optoelectronic element preparation method is illustrated
Figure；
Fig. 5 A are schematic diagram, the schematic top plan view of the step of display semiconductor optoelectronic element preparation method the 5th；
Fig. 5 B are schematic diagram, the 5th step schematic side view that display is cut according to the B-B ' line segments of top view 5A；
Fig. 6 is schematic diagram, the schematic top plan view of the step of display semiconductor optoelectronic element preparation method the 6th；
Fig. 7 A are schematic diagram, and display is regarded according to the semiconductor optoelectronic element structure side shown in another embodiment of the present invention to be illustrated
Figure；
Fig. 7 B are schematic diagram, show the schematic side view according to the part of semiconductor epitaxial hierarchical element 4 of side view 7A；
Fig. 7 C are schematic diagram, semiconductor epitaxial hierarchical element 4 and transparency conducting layer 16 part of the display according to side view 7A
Schematic perspective view；
Fig. 8 is schematic diagram, is shown according to the semiconductor optoelectronic element structure schematic side view shown in another embodiment of the present invention；
Fig. 9 A are schematic diagram, and display is regarded according to the light-emitting diode structure side shown in another embodiment of the present invention to be illustrated
Figure；
Fig. 9 B are schematic diagram, show the schematic side view according to the semiconductor epitaxial hierarchical element part of side view 9A；
Figure 10 is schematic diagram, and display is regarded according to the light-emitting diode structure side shown in another embodiment of the present invention to be illustrated
Figure.
Description of reference numerals
1：Growth substrate；
2：Sacrifice layer；
2’：Sacrifice layer side wall；
3：Semiconductor epitaxial lamination；
4：Semiconductor epitaxial hierarchical element；
4’：First semiconductor epitaxial hierarchical element；
4”：Second semiconductor epitaxial hierarchical element；
5：Patterning photoresist layer；
6、6”：Transfer organization；
6’：Transitional surface；
7：Operation substrate；
7”：Operation substrate surface；
8：Electrode zone；
9：Epitaxial region；
10：Adhesion coating；
11：First electrode；
12：Plain conductor；
13：First semiconductor material layer；
14：Second semiconductor material layer；
15：Luminescent layer；
16：Transparency conducting layer；
16’：First surface；
16”：Second surface；
17：Insulating barrier；
18：Directly contact portion；
18’：Directly contact correspondence portion；
19：First epitaxial region；
20、30：Semiconductor optoelectronic element；
21：Second epitaxial region；
22：First LED epitaxial hierarchical element；
23：Second LED epitaxial hierarchical element；
24：First direction；
25、27：First side；
26：First extending direction；
28：Second extending direction；
40、50：Light emitting diode construction；
61：The projection of transitional surface；
62：The projection of transitional surface；
71：Operate the lower surface of substrate；
101：Red light semiconductor extension lamination unit；
102：Green-emitting semiconductor extension lamination unit；
103：Blue-light semiconductor extension lamination unit.
Specific embodiment
Fig. 1 is refer to, Fig. 1 is the preparation method according to the semiconductor optoelectronic element of the embodiment of the present invention.First, according to side
View 1A, first provides growth substrate 1, and forms sacrifice layer 2 on growth substrate 1, re-forms semiconductor epitaxial lamination 3 in sacrificial
On domestic animal layer 2.Wherein, the material of growth substrate 1 for example can be selected from by sapphire (Al2O3), silicon (Si), carborundum (SiC),
The group that gallium nitride (GaN) and GaAs (GaAs) are constituted, and the material of sacrifice layer 2 for example can for aluminium arsenide (AlAs),
Calorize gallium arsenic (AlGaAs) and zinc oxide (ZnO), and semiconductor epitaxial lamination 3 for example can be folded for LED epitaxial
Layer and/or solar cell extension lamination.Then, please respectively referring concurrently to top view 1B and side view 1C, with known making
The mode separating semiconductor extension lamination such as mode, for example, dry ecthing, wet etching or laser cutting is that multiple semiconductor epitaxials are folded
Layer unit 4.After separation, as shown in Figure 1 C, the side wall 2 ' of the sacrifice layer 2 under multiple semiconductor epitaxial hierarchical elements 4 is exposed.Together
Sample ground, semiconductor epitaxial hierarchical element 4 for example can be that LED epitaxial lamination area and/or solar cell extension are folded
Layer region.
Manner described above after the structure that multiple semiconductor epitaxial hierarchical elements 4 are formed on growth substrate 1, semiconductor
Semiconductor epitaxial hierarchical element optionally will be transferred to operation base by extension lamination unit 4 according to subsequent technique or application demand
On plate.By taking Fig. 2 as an example, display respectively by red light semiconductor extension lamination unit 101, Green-emitting semiconductor extension lamination unit 102,
And the colorful display device that blue-light semiconductor extension lamination unit 103 is constituted.To coordinate this colorful display device, work as growth
When multiple semiconductor epitaxial hierarchical elements 4 on substrate radiate red light wavelength, on foundation colorful display device outside red light semiconductor
Prolong the configuration of hierarchical element 101, semiconductor epitaxial hierarchical element 4 will alternately by being optionally transferred on growth substrate 1
On operation substrate, i.e. colorful display device.
The technique of transfer is as described in following Fig. 3 A to 3C, it is necessary to the second semiconductor epitaxial hierarchical element 4 being transferred " and
The the first semiconductor epitaxial hierarchical element 4 ' that need not be shifted is through different photoresist coverage modes according to follow-up step
Reach the effect of the property of can be chosen transfer.In order to optionally shift the semiconductor epitaxial hierarchical element 4 of specific part, such as bow
In view 3A and top view 3A shown in the side view 3B of B-B ' line segments, partly led with the covering part of photoresist layer 5 for patterning
Prolong hierarchical element 4 in vitro：For the first semiconductor epitaxial hierarchical element 4 ' that need not be shifted, enveloped in the way of being completely covered
Surface comprising semiconductor epitaxial lamination and sacrifice layer side wall 2 ' exposed under it；For the second semiconductor that needs are transferred
Extension lamination unit 4 ", then covering part reaches simple fixed effect, and exposes sacrifice layer side wall 2 '.Then, using
The etching technique known, such as wet etching, the second semiconductor epitaxial is removed using etching solution via the sacrifice layer side wall 2 ' for exposing
Sacrifice layer 2 under hierarchical element 4 ".After this step, the sacrifice layer 2 of the lower section of part semiconductor extension lamination unit 4 is chosen
Remove to selecting property, represent top view 3A middle conductors B-B ' via partial sacrificial layer 2 after removal step as shown in side view 3C, in figure
Removed result.
Through this kind of mode, after all of semiconductor epitaxial hierarchical element 4 is all removed on growth substrate, original life
Substrate long by it can pass through general cleaning process after, reclaims use once again due to not wrecking.
In addition, the mode that can also be etched using wet oxygen, by adding hot and humid oxygen, aoxidizes sacrifice layer 2
Material, makes the material volumetric expansion of sacrifice layer 2 in itself, reduces sacrifice layer 2 and the adherence to each other of semiconductor epitaxial hierarchical element 4
(not shown), and semiconductor epitaxial hierarchical element 4 can be made to be separated with the active of sacrifice layer 2.After both are separated from each other, then to etch
Liquid removal material stays in the sacrifice layer 2 that the part on the surface of semiconductor epitaxial hierarchical element 4 is oxidized.
For the part semiconductor extension lamination unit that effectively selectively transfer underlying sacrificial layer 2 is removed, i.e., second
Semiconductor epitaxial hierarchical element 4 ", branching program is carried out using transfer organization 6.The material of transfer organization 6 is mainly by organic high
Molecular material is constituted, for example, foamed glue or PI glue band (tape).Transfer organization 6 has towards semiconductor epitaxial hierarchical element
4 transitional surface 6 ', wherein transitional surface 6 ' can be surface with adherence or including at least one with must transfer second
The corresponding projection 61 of semiconductor epitaxial hierarchical element 4 ".Adhesion strength through transitional surface 6 ' or by accumulating in transitional surface
The electrostatic attraction produced by electric charge between the semiconductor epitaxial hierarchical element 4 of projection 61 and second " surface, it is optionally right
Second semiconductor epitaxial hierarchical element 4 " carries out suction-operated, and by the second semiconductor epitaxial hierarchical element 4 " it is transferred to transfer knot
On structure 6, as shown in Figure 4 A.
Additionally, being transferred to the second semiconductor epitaxial lamination 4 of transfer organization 6 " on be still attached with partially patterned light
Cause resist layer 5.Therefore, in order to remove patterning photoresist layer 5 or be needed the second semiconductor according to structure design demand
Extension lamination unit 4 " is arranged at when on operation substrate upside down, can optionally carry out secondary transferring technology.I.e., such as
Shown in Fig. 4 B to 4D, when the second semiconductor epitaxial hierarchical element 4 " after be transferred to transfer organization 6, originally it was covered in part second
The patterning photoresist layer 5 of semiconductor epitaxial hierarchical element 4 " upper surface remains stuck to the second semiconductor epitaxial hierarchical element
4 " it is not removed with transfer organization 6.Now, can first by the second semiconductor epitaxial hierarchical element 4 on transfer organization 6 " it is transferred to
Second transfer organization 6 ", with photoresist removal liquid removal remain adhered to the second semiconductor epitaxial hierarchical element 4 " patterning
After photoresist layer 5, then carry out secondary transferring by the second transfer organization 6 " on the second semiconductor epitaxial hierarchical element 4 " turn
Move on operation substrate 7.Similarly, the material of the second transfer organization 6 " is mainly and is made up of high-molecular organic material, for example
It is foamed glue or PI glue band.The transitional surface of semiconductor epitaxial hierarchical element 4 of the second transfer organization 6 " with direction transfer ",
Wherein transitional surface can be the surface with adherence or the second semiconductor epitaxial lamination list including at least one with palpus transfer
The corresponding projection 62 of unit 4 ".Through the second transfer organization 6 " adhesion strength on surface or accumulation be in the projection 62 of transitional surface and the
The electrostatic attraction produced by electric charge between two semiconductor epitaxial hierarchical elements 4 " surface, optionally to the second semiconductor outside
Prolong hierarchical element 4 " suction-operated is carried out again, by the second semiconductor epitaxial hierarchical element 4 " it is transferred to the second transfer organization 6 "
On.
Finally, as shown in Figure 4 E, then by the second semiconductor epitaxial unit 4 " by the second transfer organization 6 " it is transferred to operation base
On plate 7.Certainly, if only carry out a transfer step, the second semiconductor epitaxial unit 4 " can also be similar mode directly by
Transfer organization 6 is transferred on operation substrate 7.
As shown in Figure 5A, there is multiple electrodes region 8 and multiple epitaxial regions 9 on operation substrate 7, wherein, electrode zone 8
It is separated by a certain distance with epitaxial region 9, and it may be, for example, sapphire (Al to operate the material of substrate 72O3), silicon (Si), carbonization
Silicon (SiC), gallium nitride (GaN), GaAs (GaAs) or aluminium nitride (AlN).Or, operation substrate 7 is PCB substrate or FR4 bases
Plate.FR4 substrates are glass cloth substrate, are that the plate with materials such as epoxy phenolics through HTHP hot pressing is soaked by glass cloth
Shape laminated product.It is placed on the multiple second semiconductor epitaxial hierarchical elements on transfer organization 6 (or the second transfer organization 6 ")
4 " it is transferred on operation substrate 7, its mode is, for example, to form adhesion coating 10 in the operation semiconductor epitaxial lamination list of substrate 7 and second
Between unit 4 ", to operation substrate 7 and the second semiconductor epitaxial hierarchical element 4 by way of heating " adhere.Because heating
Effect, while the second semiconductor epitaxial hierarchical element 4 can be made " absorption affinity and transfer organization 6 (6 ") between declines (transfer table
The adherence in face 6 ' is reduced because of heating), along with 10 pairs of the second semiconductor epitaxial hierarchical elements 4 of adhesion coating " and operation substrate 7
Absorption affinity, can be by the second semiconductor epitaxial hierarchical element 4 " be transferred to from transfer organization 6 (6 ") operation substrate 7.Wherein,
The material of adhesion coating 10 can be high-molecular organic material, metal material or metal alloy compositions.Additionally, in order to increase element
Light extraction efficiency or other purposes, it is also an option that property ground is on the surface 7 of operation substrate 7 " are roughened, and make surface 7 " including extremely
Few a projection (not shown) and/or an at least pothole (not shown).As shown in B-B ' line segments side view 5B in Fig. 5 A, optionally
Transfer part the second semiconductor epitaxial hierarchical element 4 " in the epitaxial region 9 of operation substrate 7, and with electrode zone 8 with specific
Distance is separated by.
Finally, as shown in fig. 6, the electrode zone 8 in operation substrate 7 forms first electrode 11, first electrode 11 simultaneously passes through
From the plain conductor 12 of its body extension or through other conducting mediums, for example, tin indium oxide, cadmium tin, zinc oxide, oxygen
Change any combination of indium, tin oxide, cupric oxide aluminium, cupric oxide gallium, strontium oxide strontia copper, aluminum zinc oxide, zinc-gallium oxide or above-mentioned material
Deng transparent conductive material with shift and be arranged on the second semiconductor epitaxial hierarchical element 4 of corresponding epitaxial region 9 " respective electricity
Property link.
Additionally, the purpose to reach elements conductive, may also include to form second electrode (not shown) in making step
Two semiconductor epitaxial hierarchical elements 4 " and operation substrate 7 between or operation substrate 7 relative to the second semiconductor epitaxial hierarchical element
4 " opposition side.
Fig. 7 A and Fig. 8 are refer to, is shown as according to the single semiconductor made by the above-mentioned production method of present invention spirit
The side view of photoelectric cell 20 and semiconductor optoelectronic element 30.Semiconductor optoelectronic element 20 and 30 for example can be solar cell
Or light emitting diode.
As shown in Fig. 7 A to Fig. 7 C, semiconductor optoelectronic element 20 includes operation substrate 7, and semiconductor epitaxial hierarchical element 4 sets
It is placed on operation substrate 7.Then, amplification semiconductor extension lamination unit 4 as shown in Figure 7 B, semiconductor epitaxial hierarchical element 4
Operated on substrate 7 comprising being arranged at, the first semiconductor material layer 13 with the first conductive characteristic, for example, p-type semiconductor
Material layer, and be arranged on the first semiconductor material layer 13, the second semiconductor material layer 14 with the second conductive characteristic,
For example, n-type semiconductor layer.When semiconductor optoelectronic element 20 and 30 is light-emitting diode, semiconductor epitaxial lamination
Unit 4 can then include luminescent layer 15 again, be arranged between the first semiconductor material layer 13 and the second semiconductor material layer 14.
With reference to Fig. 7 A, among semiconductor optoelectronic element 20 also include transparency conducting layer 16, be arranged at operation substrate 7 it
On.Second surface 16 of the transparency conducting layer 16 comprising first surface 16 ' and almost parallel first surface ".In first surface 16 '
On, the second semiconductor material layer 14 has part directly contact with transparency conducting layer 16, is defined as a directly contact portion 18.
Two surfaces 16 " are then referred to as directly contact correspondence portion 18 ' relative to the position in the directly contact of first surface 16 ' portion, amplify such as Fig. 7 C
It is shown.Note that in Fig. 7 C to clearly show that transparency conducting layer 16 with the second semi-conducting material in semiconductor epitaxial hierarchical element 4
The relative position of both layers 14 contact, therefore somewhat separate both, but both are essentially and contact with each other.Wherein, transparency conducting layer
16 material can be tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium, strontium oxide strontia
Any combination of copper, aluminum zinc oxide, zinc-gallium oxide or above-mentioned material.In order to increase the efficiency of element light extraction or extinction, preferred
In the case of, it is covered in the light transmission efficiency of transparency conducting layer 16 on semiconductor epitaxial hierarchical element 4 and should be greater than 90%.
With continued reference to Fig. 7 A, to reach the electrical connection of element and the external world, among the present embodiment, operation substrate 7 it
On, also include a first electrode 11 and be arranged on portion 18 ' corresponding with directly contact of directly contact portion 18 on transparency conducting layer 16
Outside region, electrical connection is carried out by transparency conducting layer 16 and semiconductor epitaxial hierarchical element 4.Through such design,
Due to the covering of the top of semiconductor epitaxial hierarchical element 4 is transparent material, whether light extraction or the suction of semiconductor optoelectronic element 20
The efficiency of light can be lifted significantly.It is worth noting that, the firm and efficiency in order to increase component structure, is partly leading
Prolong the part surface of hierarchical element 4 it is also an option that being protected with insulation material layer 17 for property, insulating materials can be such as in vitro
Think common silica or silicon nitride material.Additionally, as described in above-mentioned preparation method, in this configuration, semiconductor epitaxial
One layer of adhesion coating 10 is also optionally set between hierarchical element 4 and operation substrate 7 to reach the effect for adhering to one another.
Referring next to Fig. 8, Fig. 8 is another semiconductor optoelectronic element 30 according to made by spirit of the invention.Implement herein
In example, the structure similar to previous embodiment is then repeated no more.Unlike, in the present embodiment, on semiconductor optoelectronic element 30
First electrode 11 also include that multiple plain conductors 12 extend to directly contact correspondence portion 18 ' from first electrode, by metal compared with
Low resistance value characteristic increases the electrical efficiency of element, and its top view can reference picture 6 in the lump.Wherein, the material of first electrode 11
The single or multiple lift metal structure that material can be made up of titanium, aluminium, gold, chromium, nickel, germanium or above-mentioned any alloy, plain conductor
12 are preferably with width less than 20 μm, and plain conductor 12 can also be optionally made by different materials with first electrode 11
Into.
Additionally, the purpose to reach elements conductive, may also include to form second electrode (not shown) in semiconductor in structure
Extension lamination unit 4 and operation substrate 7 between or operation substrate 7 relative to the opposition side of semiconductor epitaxial hierarchical element 4, that is, grasp
Make the lower surface 71 of substrate.In order to increase the light extraction efficiency or other purposes of element, can also include on the surface of operation substrate 7
There are an at least projection (not shown) and/or at least roughened textures of a pothole (not shown).
Fig. 9 A are shown according to a kind of light emitting diode construction 40 made by present invention spirit.In structure 40, including
Operation substrate 7, operation substrate 7 has surface 7 ", multiple first epitaxial regions 19 and multiple second epitaxial regions are included on surface
21.In each epitaxial region, all including an above-mentioned semiconductor optoelectronic element (being herein light-emitting diode).Also
It is to say, in each epitaxial region, all including a LED epitaxial hierarchical element.It is worth noting that, first
Included the first LED epitaxial hierarchical element 22 for being to radiate the first main radiation wavelength in epitaxial region 19, in this reality
The first main a length of radiation feux rouges of radioactive wave in example is applied, wavelength is between 600nm to 650nm.Certainly, according to different demands,
First it is main radiation wavelength or can be green glow, wavelength between 510nm to 550nm, or can be blue light, wavelength between
Between 390nm to 440nm；And included in the second epitaxial region 21 it is to radiate the second luminous two of the second main radiation wavelength
Pole pipe extension lamination unit 23, the second main a length of radiation green glow of radioactive wave in the present embodiment, wavelength is between 510nm to 550nm
Between.In from embodiment, the first main radiation wavelength can be not equal to the second main radiation wavelength.
The production method of the semiconductor optoelectronic element introduced by above-described embodiment, even if being wrapped on single operation substrate
(it is herein with different main radiation wavelength luminous two containing two kinds (such as this structure 40) or more different extension lamination unit
Pole pipe extension lamination unit), can be easily according to demand by transfer once, you can selectivity is shifted from growth substrate
Multiple be grown on single-phase with diverse location on growth substrate but can radiate it is identical it is main radiation wavelength LED epitaxial fold
On layer unit to operation substrate.Therefore, it is by taking the structure 40 of Fig. 9 A as an example, it is only necessary to transfer action twice, i.e., spontaneous for the first time
The growth substrate transfer feux rouges extension lamination unit of red light-emitting diode element long, for the second time from growth green light LED
The growth substrate transfer green glow extension lamination unit of element, you can all extension lamination units settings is first on completion operation substrate
Step structure, without with it is artificial choose or the unit of mode Unit 1 one such as robotic arm gripping shift, can shorten technique when
Between.
Likewise, Fig. 9 B are refer to, and among light emitting diode construction 40, each LED epitaxial hierarchical element
22 and 23 respectively comprising the first semiconductor material layer 13 with the first conductive characteristic, for example, p-type semiconductor material layer, setting
On the first semiconductor material layer 13, the second semiconductor material layer 14 with the second conductive characteristic, for example, n-type semiconductor
Material layer, and luminescent layer 15, are arranged between the first semiconductor material layer 13 and the second semiconductor material layer 14.
Additionally, as described in the above embodiments, to reach the purpose of elements conductive, in structure 40, each first
The LED epitaxial hierarchical element 23 of LED epitaxial hierarchical element 22 and/or second may also include a first electrode
(not shown) is arranged at opposition side of the semiconductor epitaxial hierarchical element relative to operation substrate 7, in the present embodiment, is as arranged on
On semiconductor epitaxial hierarchical element；Or it is arranged at the surface 7 of semiconductor epitaxial hierarchical element and operation substrate 7 " between；Or
It is to operate substrate 7 relative to the opposition side of semiconductor epitaxial hierarchical element, that is, operates the lower surface of substrate.In order to increase element
Light extraction efficiency or other purposes, an at least projection (not shown) and/or at least can also be included on the surface of operation substrate 7
The roughened textures of pothole (not shown).
It is worth noting that, when carrying out shifting process each time, meeting between operation substrate 7 and transfer organization 6 (6 ")
There is the possibility for producing bit errors.Therefore, carrying out the light emitting diode construction of selectively transfer technique will likely occur such as figure
10 situation.By taking light emitting diode construction 50 as an example, the surface 7 of the operation repetitive substrate 7 of first direction 24 is defined ", due to radiation
First LED epitaxial hierarchical element 22 of the first main radiation wavelength is to be transferred to behaviour together in a shifting process
Make on substrate 7, therefore, influence is attached to all of first on transfer organization indirectly to produce transfer organization angle skew in itself
LED epitaxial hierarchical element 22 produces identical to align the situation of angle skew together.In the same manner, the master of radiation second is put
Ejected wave the second LED epitaxial hierarchical element 23 long is to be transferred to operation substrate 7 together in a shifting process
On, therefore, also have the situation for producing identical contraposition angle skew together.It is folded with one of them first LED epitaxial
As a example by layer unit 22, with any one parallel to operation substrate 7 surface 7 " the first side 25.To each the first light-emitting diodes
Make extended line in first side 25 of pipe extension lamination unit 22, it is found that all of extended line there can be the first parallel extension of essence
Direction 26.In the same manner, by taking the second LED epitaxial of any of which hierarchical element 23 as an example, there can be one and correspond to
First LED epitaxial hierarchical element 22 is parallel to operation substrate 7 surface 7 " the first side 27.To each second light
Make extended line in first side 27 of diode epitaxial hierarchical element 23, it is found that there is all of extended line essence parallel second to prolong
Length direction 28.Because the contraposition angle skew produced by shifting twice is not quite similar, therefore, with the first direction 24 of script definition
On the basis of, the first extending direction 26 can produce angle theta with first direction 241, and the second extending direction 28 and the meeting of first direction 24
Produce another angle theta2, and θ1It is not equal to θ2.In the present embodiment, θ1It is approximately equal to 70 degree and θ2It is approximately equal to 90 degree.
Explanation more than, it may be appreciated that a kind of transfer making method of disclosed semiconductor optoelectronic element is removed
Intactly retain the growth substrate of semiconductor optoelectronic element, outside can reusing, and can with optionally
Mode single transfer multiple semiconductor optoelectronic element units in operation substrate on, Simplified flowsheet.This mode, for developing
The making of Multicolor lighting elements or multicolor display, with cost-effective and the shortening process time good effects.
Each embodiment cited by the present invention is only used to illustrate the present invention, and is not used to limit the scope of the present invention.It is any
People's any modification apparent easy to know made for the present invention or change all do not depart from spirit and scope of the invention.
Claims (9)
1. a kind of preparation method of semiconductor optoelectronic element, including：
One first substrate is provided；
A sacrifice layer is formed on the first substrate；
Semiconductor extension lamination is formed on the sacrifice layer；
It is multiple semiconductor epitaxial hierarchical elements and multiple sacrifice layers to separate the semiconductor epitaxial lamination and the sacrifice layer, and this is more
Individual semiconductor epitaxial hierarchical element is corresponded with the plurality of sacrifice layer；
Form a patterned layer, be covered on the plurality of semiconductor epitaxial hierarchical element, for without transfer the semiconductor outside
Prolong hierarchical element, the side wall of exposed sacrifice layer under it is coated in the way of being completely covered, for the semiconductor for needing transfer
Extension lamination unit, coats its surface and exposes the side wall of the sacrifice layer under it in the way of part covers；
Remove the sacrifice layer below the semiconductor epitaxial hierarchical element of needs transfer；
And
Shift on semiconductor epitaxial hierarchical element a to second substrate of needs transfer.
2. preparation method as claimed in claim 1, wherein shifting the semiconductor epitaxial hierarchical element of needs transfer to should
After the step of second substrate, should be stayed on the first substrate without the semiconductor epitaxial hierarchical element of transfer.
3. preparation method as claimed in claim 1, wherein shifting the semiconductor epitaxial hierarchical element of needs transfer to should
After the step of second substrate, removal is attached to the patterned layer of the semiconductor epitaxial hierarchical element of needs transfer.
4. preparation method as claimed in claim 1, the wherein patterned layer include photoresist.
5. there is projection to correspond to the half of needs transfer for preparation method as claimed in claim 1, the wherein second substrate
Conductor extension lamination unit.
6. preparation method as claimed in claim 1, is also electrically connected at the plurality of semiconductor including forming multiple first electrodes
Extension lamination unit.
7. preparation method as claimed in claim 6, wherein the plurality of semiconductor epitaxial hierarchical element and the plurality of first electrode
It is separated by a distance.
8. preparation method as claimed in claim 1, also engage the second substrate including forming an adhesion coating needs to shift with this
Semiconductor epitaxial hierarchical element.
9. preparation method as claimed in claim 1, also including the semiconductor epitaxial hierarchical element of secondary transferring needs transfer
To one the 3rd substrate.
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| TW434917B (en) * | 1999-09-09 | 2001-05-16 | Epistar Corp | Light emitting diode array |
| CN1491436A (en) * | 2001-02-08 | 2004-04-21 | �Ҵ���˾ | Chip transfer method and apparatus |
| CN101517700A (en) * | 2006-09-20 | 2009-08-26 | 伊利诺伊大学评议会 | Release strategies for making transferable semiconductor structures, devices and device components |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW434917B (en) * | 1999-09-09 | 2001-05-16 | Epistar Corp | Light emitting diode array |
| CN1491436A (en) * | 2001-02-08 | 2004-04-21 | �Ҵ���˾ | Chip transfer method and apparatus |
| CN101517700A (en) * | 2006-09-20 | 2009-08-26 | 伊利诺伊大学评议会 | Release strategies for making transferable semiconductor structures, devices and device components |
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