CN106847999B - A kind of manufacturing method of solar power generation component - Google Patents
A kind of manufacturing method of solar power generation component Download PDFInfo
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- CN106847999B CN106847999B CN201710109996.3A CN201710109996A CN106847999B CN 106847999 B CN106847999 B CN 106847999B CN 201710109996 A CN201710109996 A CN 201710109996A CN 106847999 B CN106847999 B CN 106847999B
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- solar battery
- solar
- layer
- power generation
- generation component
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- 238000010248 power generation Methods 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 28
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of manufacturing methods of solar power generation component, in turn include the following steps：Silicon substrate is provided, the silicon substrate has opposite first surface and second surface；Etching is formed in multiple grooves in the silicon substrate；Multiple first solar battery cells are formed, are placed in the multiple groove, and its top surface is flushed with the first surface；Patterned first transparency conducting layer is formed, setting is on the first surface；Multiple second solar battery cells are formed, are set on the first surface, and is staggered in the horizontal with the multiple first solar battery cell；First transparency conducting layer is separately connected multiple first solar battery groups of hearth electrode composition of the top electrode and second solar battery cell of first solar battery cell.
Description
Technical field
The present invention relates to new energy fields, and in particular to a kind of manufacturing method of solar power generation component.
Background technology
With the continuous development of the mankind, energy consumption is increasing so that the related-art process of solar components becomes
The hot issue that the whole society pays close attention to energetically.Itself for solar components, for the transfer efficiency pole of sunlight and
Its stability has direct relationship with solar cell fabrication process and solar structure.In the prior art, solar-electricity
Pond mostly uses the solar battery panel of the form formation large area to tile in the same plane subsequently to encapsulate use, however
The utilization ratio for the solar battery panel light arranged in this way is low, is not easy to lock light.How the conversion effect of solar cell is improved
Rate is current key point in urgent need to be improved.
Invention content
Based on solving the above problems, the present invention provides a kind of manufacturing methods of solar power generation component, include such as successively
Lower step：
Silicon substrate is provided, the silicon substrate has opposite first surface and second surface；
Etching is formed in multiple grooves in the silicon substrate；
Multiple first solar battery cells are formed, are placed in the multiple groove, and its top surface and first table
Face flushes；
Patterned first transparency conducting layer is formed, setting is on the first surface；
Form multiple second solar battery cells, be set on the first surface, and with the multiple first sun
Energy battery unit is staggered in the horizontal；
First transparency conducting layer is separately connected the top electrode and second solar energy of first solar battery cell
The hearth electrode of battery unit forms multiple first solar battery groups.
According to an embodiment of the invention, further comprise that be formed on the side wall and bottom wall of the multiple groove first is anti-
Material layer is penetrated, first layer of reflective material surrounds the multiple first solar battery cell.
According to an embodiment of the invention, further include the second reflecting material of deposition, then perform etching, form the second reflecting material
The bed of material is in the side of the multiple second solar battery cell and first transparency conducting layer.
According to an embodiment of the invention, further include forming first through hole, by the multiple first solar battery cell
Hearth electrode leads to the second surface.
According to an embodiment of the invention, further include forming the second through-hole and the second transparency conducting layer, the transparency conducting layer
The top electrode of the multiple second solar battery cell and second layer of reflective material are covered, and it is logical to be electrically connected described second
Hole by the top electrode of the multiple second solar battery cell to lead to the second surface.
According to an embodiment of the invention, further include depositing conductive layer on the second surface, then carry out patterning shape
At electrode pattern, it is electrically connected first and second through-hole.
According to an embodiment of the invention, first layer of reflective material is identical with second reflecting material, is respectively selected from
The insulating glass or insulating ceramics of reflective.
According to an embodiment of the invention, first transparency conducting layer and the second transparency conducting layer are selected from ITO（Tin dope three
Indium oxide）, AZO (aluminium-doped zinc oxide) or IZO（Indium doping zinc oxide）.
Advantages of the present invention is as follows：
（1）Using solar battery cell on the surface of a substrate with the fluctuating under surface, the sun of concavo-convex arrangement is formed
Energy battery panel, being conducive to continuous reflection enhancement of the sunlight on male and fomale(M＆F), it is absorbed；
（2）Light reflecting material layer further increases light reflection, increases the capture probability of light；
（3）Preparation process method is simple, cost reduction.
Description of the drawings
Fig. 1 is the sectional view of the solar power generation component of the present invention；
Fig. 2-9 is the sectional view of the manufacturing process of the solar power generation component of the present invention；
Figure 10 is the flow chart of the solar power generation component manufacturing process of the present invention.
Specific implementation mode
Referring to Fig. 1, solar power generation component of the invention, including：
Silicon substrate 1 has opposite first surface（Upper surface）And second surface（Lower surface）；
Multiple grooves 2 are formed in the silicon substrate 1；
Multiple first solar battery cells 4, are placed in the multiple groove 2, and its top surface and the first surface
It flushes；
Multiple second solar battery cells 3, are set on the first surface, and with the multiple first solar-electricity
Pool unit 4 is staggered in the horizontal；
First transparency conducting layer 6 of separation, setting on the first surface, and are separately connected first solar-electricity
The hearth electrode of the top electrode of pool unit 4 and second solar battery cell 3 forms multiple first solar battery groups；
First layer of reflective material 5b, is formed on the side wall and bottom wall of the multiple groove 2, and surrounds the multiple first
Solar battery cell 4.
Further include the second layer of reflective material 5a, setting the multiple second solar battery cell 3 and it is described first thoroughly
The side of bright conductive layer 6.Further include first through hole 12, the hearth electrode of the multiple first solar battery cell 4 is led to
The second surface.Further include the second through-hole 8, the second transparency conducting layer 7, the transparency conducting layer 7 covers the multiple second
The top electrode of solar battery cell 3 and the second layer of reflective material 5a, and second through-hole 8 is electrically connected with will be described more
The top electrode of a second solar battery cell 3 leads to the second surface.
Further include electrode pattern, including first electrode 10 and second electrode 9, be arranged on the second surface, respectively electricity
Connect the first through hole 12 and the second through-hole 8.
Referring to Figure 10, the manufacturing method of solar power generation component of the invention in turn includes the following steps：
Referring to Fig. 2, silicon substrate 1 is provided, the silicon substrate has opposite first surface and second surface, has certain
Thickness, can be Silicon Wafer；
The multiple grooves 2 being formed in by dry or wet etch referring to Fig. 3 in the silicon substrate 1；
Referring to Fig. 4, the first layer of reflective material 5b being formed on the side wall and bottom wall of the multiple groove 2, described first
Layer of reflective material can be formed by depositional mode, and the first layer of reflective material 5b can form concave-convex table by ion bombardment
Face forms diffusing reflection layer.
Referring to Fig. 5, form multiple first solar battery cells 4, be placed in the multiple groove 2, and its top surface with
The first surface flushes, and the first layer of reflective material 5b surrounds the multiple first solar battery cell 4；
Patterned first transparency conducting layer 6 is formed, setting is on the first surface；It is formed can be whole by depositing
Then patterned mode is formed and can also be formed by way of silk-screen printing a first surface.
Referring to Fig. 6, form multiple second solar cell lists, 3, be set on the first surface, and with it is the multiple
First solar battery cell 4 is staggered in the horizontal；
First transparency conducting layer 6 is separately connected the top electrode and second sun of first solar battery cell 4
The hearth electrode of energy battery unit 3 forms multiple first solar battery groups.
Referring to Fig. 7, the second reflecting material is deposited, is then performed etching, form the second reflecting material, 5a is the multiple the
The side of two solar battery cells 3 and first transparency conducting layer 6.
Referring to Fig. 8, via 13 is formed, and fills conductive materials and forms first through hole 12, by the multiple first solar energy
Battery list, 3 hearth electrode lead to the second surface.
Via 14 is formed, and fills conductive materials and forms the second through-hole 8, then carry out transparency conducting layer deposition and carry out figure
Caseization forms the second transparency conducting layer 7, and the transparency conducting layer 7 covers the top electricity of the multiple second solar battery cell 3
Pole and the second layer of reflective material 5a, and second through-hole 8 is electrically connected with by the multiple second solar battery cell 3
Top electrode lead to the second surface.
Referring to Fig. 9, conductive layer is deposited on the second surface, is then carried out patterning and is formed electrode pattern 9,10, point
It is not electrically connected first and second through-hole 8,12.
According to an embodiment of the invention, the first layer of reflective material 5b is identical with the second reflecting material 5a, respectively
Insulating glass selected from reflective or insulating ceramics.First transparency conducting layer, 6 and second transparency conducting layer 7 is selected from ITO（Tin
Adulterate three indium oxides）, AZO (aluminium-doped zinc oxide) or IZO（Indium doping zinc oxide）.
Finally it should be noted that：Obviously, the above embodiment is merely an example for clearly illustrating the present invention, and simultaneously
The non-restriction to embodiment.For those of ordinary skill in the art, it can also do on the basis of the above description
Go out other various forms of variations or variation.There is no necessity and possibility to exhaust all the enbodiments.And thus drawn
The obvious changes or variations that Shen goes out are still in the protection scope of this invention.
Claims (8)
1. a kind of manufacturing method of solar power generation component, in turn includes the following steps：
Silicon substrate is provided, the silicon substrate has opposite first surface and second surface；
Etching is formed in multiple grooves in the silicon substrate；
Multiple first solar battery cells are formed, are placed in the multiple groove, and its top surface and the first surface are neat
It is flat；
Patterned first transparency conducting layer is formed, setting is on the first surface；
Form multiple second solar battery cells, be set on the first surface, and with the multiple first solar-electricity
Pool unit is staggered in the horizontal；
First transparency conducting layer is separately connected the top electrode and second solar cell of first solar battery cell
The hearth electrode of unit forms multiple first solar battery groups.
2. the manufacturing method of solar power generation component according to claim 1, it is characterised in that：Further comprise being formed in
The first layer of reflective material on the side wall and bottom wall of the multiple groove, first layer of reflective material surround the multiple first
Solar battery cell.
3. the manufacturing method of solar power generation component according to claim 1, it is characterised in that：Further include that deposition second is anti-
Material is penetrated, is then performed etching, forms the second layer of reflective material in the multiple second solar battery cell and described first
The side of transparency conducting layer.
4. the manufacturing method of solar power generation component according to claim 3, it is characterised in that：Further include forming first to lead to
The hearth electrode of the multiple first solar battery cell is led to the second surface by hole.
5. the manufacturing method of solar power generation component according to claim 4, it is characterised in that：Further include forming second to lead to
Hole and the second transparency conducting layer, second transparency conducting layer cover the multiple second solar battery cell top electrode and
Second layer of reflective material, and second through-hole is electrically connected with by the top electrode of the multiple second solar battery cell
Lead to the second surface.
6. the manufacturing method of solar power generation component according to claim 5, it is characterised in that：Further include described second
Conductive layer is deposited on surface, is then carried out patterning and is formed electrode pattern, is electrically connected first and second through-hole.
7. the manufacturing method of solar power generation component according to claim 3, it is characterised in that：First layer of reflective material and
Second reflecting material is identical, is selected from the insulating glass or insulating ceramics of reflective.
8. the manufacturing method of solar power generation component according to claim 5, it is characterised in that：First electrically conducting transparent
Layer and the second transparency conducting layer are selected from ITO（Three indium oxide of tin dope）, AZO (aluminium-doped zinc oxide) or IZO（Indium doping aoxidizes
Zinc）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710109996.3A CN106847999B (en) | 2017-02-28 | 2017-02-28 | A kind of manufacturing method of solar power generation component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710109996.3A CN106847999B (en) | 2017-02-28 | 2017-02-28 | A kind of manufacturing method of solar power generation component |
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| CN106847999A CN106847999A (en) | 2017-06-13 |
| CN106847999B true CN106847999B (en) | 2018-08-03 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1243602A (en) * | 1997-01-21 | 2000-02-02 | 博拉尔能源有限公司 | A method of producing thin silicon films |
| CN103579407A (en) * | 2012-07-26 | 2014-02-12 | 聚日（苏州）科技有限公司 | Solar cell and manufacturing method thereof |
| CN104091862A (en) * | 2010-08-06 | 2014-10-08 | 晶元光电股份有限公司 | Semiconductor photoelectric element and manufacturing method thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006013403A (en) * | 2004-06-29 | 2006-01-12 | Sanyo Electric Co Ltd | Solar cell, solar cell module, its manufacturing method, and its reparing method |
| TWI373849B (en) * | 2008-06-12 | 2012-10-01 | Nexpower Technology Corp | Stacked-layered thin film solar cell and manufacturing method thereof |
| CN101958361A (en) * | 2009-07-13 | 2011-01-26 | 无锡尚德太阳能电力有限公司 | Method for etching transparent thin-film solar cell component |
| KR20130011462A (en) * | 2011-07-21 | 2013-01-30 | 삼성에스디아이 주식회사 | Solar cell module and method for manufacturing the same |
| CN103165694B (en) * | 2011-12-09 | 2016-11-23 | 聚日（苏州）科技有限公司 | A kind of solar module and manufacture method thereof |
| CN103247635B (en) * | 2013-01-31 | 2015-12-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Laser photovoltaic cell of positive-negative-positive structure and preparation method thereof |
| CN103985780B (en) * | 2013-02-08 | 2016-08-31 | 上海凯世通半导体股份有限公司 | The manufacture method of solaode |
| CN104201249A (en) * | 2014-09-15 | 2014-12-10 | 六安市大宇高分子材料有限公司 | Production method of inverted-growth InAlAsP/InGaAs/Ge triple-junction photovoltaic battery |
-
2017
- 2017-02-28 CN CN201710109996.3A patent/CN106847999B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1243602A (en) * | 1997-01-21 | 2000-02-02 | 博拉尔能源有限公司 | A method of producing thin silicon films |
| CN104091862A (en) * | 2010-08-06 | 2014-10-08 | 晶元光电股份有限公司 | Semiconductor photoelectric element and manufacturing method thereof |
| CN103579407A (en) * | 2012-07-26 | 2014-02-12 | 聚日（苏州）科技有限公司 | Solar cell and manufacturing method thereof |
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Denomination of invention: A manufacturing method for solar power generation modules Effective date of registration: 20230322 Granted publication date: 20180803 Pledgee: Nantong Hexin technology microfinance Co.,Ltd. Pledgor: NANTONG YIXUAN INDUSTRIAL DESIGN Co.,Ltd. Registration number: Y2023980035273 |
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Granted publication date: 20180803 Pledgee: Nantong Hexin technology microfinance Co.,Ltd. Pledgor: NANTONG YIXUAN INDUSTRIAL DESIGN Co.,Ltd. Registration number: Y2023980035273 |
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