CN104091808B - 阵列基板及其制作方法和显示装置 - Google Patents

阵列基板及其制作方法和显示装置 Download PDF

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CN104091808B
CN104091808B CN201410294603.7A CN201410294603A CN104091808B CN 104091808 B CN104091808 B CN 104091808B CN 201410294603 A CN201410294603 A CN 201410294603A CN 104091808 B CN104091808 B CN 104091808B
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CN104091808A (zh
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蔡振飞
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Hefei Xinsheng Optoelectronics Technology Co Ltd
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Abstract

本发明公开了一种阵列基板和显示装置，该阵列基板中，包括形成在源漏电极层的对位标记，并在像素电极和钝化层中对应于对位标记的区域形成检测孔，这样可以通过将电子束照射到检测孔中实现对对位标记进行正常检测。并且，由于在对位标记和公共电极线之间仅包含栅极绝缘层和刻蚀保护层，这样就仅需要一次干法刻蚀就能实现对位标记与公共电极的连接，从而解决了多次干法刻蚀制作同一过孔导致的过孔侧壁坡度不一致问题，减小像素电极在过孔侧壁发生断裂引起检测图形失效的可能性。

Description

阵列基板及其制作方法和显示装置
技术领域
本发明属于显示技术领域，特别涉及一种阵列基板及其制作方法和显示装置。
背景技术
阵列基板检测过程中，需要进行对位设置，对位过程具体为在pad上施加公共电压信号，检测设备发射电子束到阵列基板的对位标记区域，对位标记区域中的金属区域会吸收检测设备发出的电子形成电流，而被刻蚀区域因为没有金属的存在，不会吸收电子。设备通过感知电流确定是否正确对位。
如图1所示，为现有技术中的一种阵列基板在形成对位标记结构的区域的示意图，包括玻璃基板1、公共电极2、栅极绝缘层3、刻蚀阻挡层4、钝化层5、像素电极层6、对位标记制作在像素电极层6上，像素电极层6通过在刻蚀阻挡层4和栅极绝缘层3中形成的过孔以及在钝化层5中形成的过孔与公共电极2连接。而为了避免在过孔区域沉积的像素电极6的断裂，需要两个过孔的侧壁的坡度以及两个过孔的大小严格一致，而在实际刻蚀过孔的过程中，所形成的过孔的侧壁的坡度极难控制，因此经常出现对位标记失效的情况。
发明内容
本发明的目的是提供一种能够有效避免对位标记失效的阵列基板。
本发明提供了一种TFT阵列基板，包括玻璃基板和形成在所述玻璃基板上的公共电极层、栅极绝缘层、刻蚀阻挡层、源漏电极层、钝化层、像素电极层，其特征在于，还包括形成在所述源漏电极层的对位标记，所述栅极绝缘层和所述刻蚀阻挡层上还形成有第一过孔，所述对位标记通过所述第一过孔与栅极和公共电极层中的公共电极相连；在所述钝化层和像素电极层中对应于所述对位标记的区域还形成有检测孔。
进一步的，所述对位标记中形成有“F”形图案。
进一步的，所述检测孔形成在所述“F”形图案所对应的区域。
进一步的，所述有源层为金属氧化物。
进一步的，所述阵列基板为边缘场开关基板。
本发明还提供了一种制作阵列基板的方法，包括：
在玻璃基板上依次制作栅极和公共电极层、栅极绝缘层、有源层、刻蚀阻挡层、源漏电极层、钝化层、像素电极层，同时在所述钝化层中形成第二过孔，使所述源漏电极层通过所述第二过孔与所述像素电极层相连；
其中，在形成刻蚀阻挡层之后，所述方法还包括：
对所述刻蚀阻挡层和所述栅极绝缘层进行刻蚀，形成第一过孔；
在源漏电极层中还形成对位标记，并使所述对位标记通过所述第一过孔与所述公共电极层相连；
并使所述对位标记通过所述第一过孔与所述公共电极层相连；
在形成所述像素电极层之后，所述方法还包括：
对所述像素电极层和所述钝化层中对应与所述对位标记的区域进行刻蚀，形成检测孔。
进一步的，所述方法还包括：
在所述对位标记中刻蚀“F”形图案。
进一步的，所述对所述像素电极层和所述钝化层中对应与所述对位标记的区域进行刻蚀，形成检测孔，具体为：
在所述像素电极层和所述钝化层中“F”形图案所对应的区域进行刻蚀，形成检测孔。
进一步的，所述有源层为金属氧化物层。
本发明还提供了一种显示装置，其特征在于，包括上述任一项所述的阵列基板。
本发明提供的阵列基板中，包括形成在源漏电极层的对位标记，并在像素电极和钝化层中对应于对位标记的区域形成检测孔，这样可以通过将电子束照射到检测孔中实现对对位标记进行正常检测。并且，由于在对位标记和公共电极线之间仅包含栅极绝缘层和刻蚀保护层，这样就仅需要一次干法刻蚀就能实现对位标记与公共电极的连接，从而解决了多次干法刻蚀制作同一过孔导致的过孔侧壁坡度不一致问题，减小像素电极在过孔侧壁发生断裂引起检测图形失效的可能性。
附图说明
图1为现有技术中的阵列基板在形成有对位标记结构的区域的剖面结构示意图；
图2为本发明提供的阵列基板在形成有对位标记结构的区域的剖面结构示意图；
图3为本发明提供的阵列基板在形成有对位标记结构的区域的示意图。
具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。
本发明提供了一种TFT阵列基板，如图2所示，TFT阵列基板包括：玻璃基板1、形成在所述玻璃基板上的栅极(图中未示出)和公共电极层2、栅极绝缘层3、有源层(图中未示出)、刻蚀阻挡层4、源漏电极层(图中未示出)、钝化层5、像素电极层6。
TFT阵列基板还包括形成在源漏电极层中的对位标记7，栅极绝缘层3和刻蚀阻挡层4上还形成有过孔8，对位标记7通过第一过孔8与栅极和公共电极层2中的公共电极相连；在钝化层5和像素电极层6中对应于对位标记7的区域还形成有检测孔9。
需要指出的是，这里的栅极和公共电极层包括一体形成的栅极图案和公共电极图案，栅极层包括栅极和栅极线，公共电极层包括公共电极图案和公共电极线图案，这里的源漏极层包括源漏电极图案和数据信号线图案，在所述的钝化层中还应形成有另一过孔(第二过孔)，所述源漏极层通过该第二过孔与像素电极层相连。实际应用中，栅极、有源层、源漏电极一般形成在TFT结构的区域，而TFT结构本身是现有技术，并且也不是本发明的改进所在，因此本发明实施例及附图中不再针对TFT的结构进行详细说明。
实际应用中，对位标记一般形成在非TFT的区域，这个区域一般不包括栅极、有源层、源漏电极层。本发明实施例及图2中主要对对位标记所在的区域进行说明。
本发明提供的阵列基板中，包括形成在源漏电极层的对位标记，并在像素电极层和钝化层中对应于对位标记的区域形成检测孔，这样可以通过将电子束照射到检测孔中实现对对位标记进行正常检测。并且，由于在对位标记和公共电极线之间仅包含栅极绝缘层和刻蚀保护层，这样就仅需要一次干法刻蚀就能实现对位标记与公共电极的连接，从而解决了多次干法刻蚀制作同一过孔导致的过孔侧壁坡度不一致问题，减小像素电极在过孔侧壁发生断裂引起检测图形失效的可能性。另一方面，由于对位标记与源漏电极材料相同，能够提高吸收电子的效率，相对于现有技术中将采用像素电极(一般为ITO)作为对位标记的方式，能够增加检测的灵敏度。
进一步的，如图3所示，所述对位标记中形成有“F”形图案10。
在现有技术中，形成在像素电极上的对位标记中的图案一般为“L”(将“L”形区域刻蚀掉)形，这样的对位标记很容易造成误识别。而发明实施例中，将对位标记设置为“F”形(即将“F”形区域刻蚀掉)，方向性更强，有利于提高识别的准确性。
在实际应用中，在阵列基板上还形成有与公共电极2相连的焊盘11。在进行检测时，可以在焊盘11上施加公共电压信号，并向对位区域发射电子束，对于对位区域中“F”形图案的部分，由于不存在金属，也不能吸收电子，则相应的设备不会感应到电流，对于“F”形以外的区域；对于对位标记上“F”形以外的区域，能够吸收电子并产生电流，则相应的设备不会感应到电流。通过这种方式，能够确定阵列基板是否准确对位。
进一步的，检测孔9形成在“F”形图案10所在的区域。
进一步的，所述有源层为金属氧化物。
进一步的，所述阵列基板为边缘场开关(Fringe Field Switching，FFS)基板。
本发明还提供了一种制作阵列基板的方法，包括：
步骤S1，在玻璃基板上沉积第一金属层，并通过光刻或湿法刻蚀形成包括形成栅极图案、栅极线图案、公共电极图案和公共电极线图案；
步骤S2，在经步骤S1形成的玻璃基板上形成沉积栅极绝缘层；
步骤S3，在经步骤S2形成的玻璃基板上沉积氧化物，并通过光刻和湿法刻蚀将对位标记区域的氧化物刻蚀掉；
步骤S4，在步骤S3得到的玻璃基板上沉积刻蚀保护层，并通过光刻和干法刻蚀对刻蚀保护层和栅极绝缘层进行刻蚀，得到第二过孔；
步骤S5，在步骤S4得到的玻璃基板上沉积第二金属层，通过光刻和湿法刻蚀形成对位标记以及源漏电极图案和相应的数据信号线图案；
步骤S6，在步骤S3得到的玻璃基板上沉积进行钝化层沉积，通过光刻-干法刻蚀将对位标记上方的钝化层去掉。
本发明还提供了一种显示装置，包括上述任一项所述的阵列基板。
这里的显示装置可以为：电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和替换，这些改进和替换也应视为本发明的保护范围。

Claims (9)

1.一种TFT阵列基板，包括玻璃基板和形成在所述玻璃基板上的公共电极层、栅极绝缘层、刻蚀阻挡层、源漏电极层、钝化层、像素电极层，其特征在于，还包括形成在所述源漏电极层的对位标记，所述栅极绝缘层和所述刻蚀阻挡层上还形成有第一过孔，所述对位标记通过所述第一过孔与栅极和公共电极层中的公共电极相连；在所述钝化层和像素电极层中对应于所述对位标记的区域还形成有检测孔。
2.如权利要求1所述的阵列基板，其特征在于，所述对位标记中形成有“F”形图案。
3.如权利要求2所述的阵列基板，其特征在于，所述检测孔形成在所述“F”形图案所对应的区域。
4.如权利要求1-3任一项所述的阵列基板，其特征在于，所述阵列基板为边缘场开关基板。
5.一种制作阵列基板的方法，其特征在于，包括：
在玻璃基板上依次制作栅极和公共电极层、栅极绝缘层、有源层、刻蚀阻挡层、源漏电极层、钝化层、像素电极层，同时在所述钝化层中形成第二过孔，使所述源漏电极层通过所述第二过孔与所述像素电极层相连；
其中，在形成刻蚀阻挡层之后，所述方法还包括：
对所述刻蚀阻挡层和所述栅极绝缘层进行刻蚀，形成第一过孔；
在源漏电极层中还形成对位标记，并使所述对位标记通过所述第一过孔与所述公共电极层相连；
在形成所述像素电极层之后，所述方法还包括：
对所述像素电极层和所述钝化层中对应与所述对位标记的区域进行刻蚀，形成检测孔。
6.如权利要求5所述的方法，其特征在于，还包括：
在所述对位标记中刻蚀“F”形图案。
7.如权利要求6所述的方法，其特征在于，所述对所述像素电极层和所述钝化层中对应与所述对位标记的区域进行刻蚀，形成检测孔，具体为：
在所述像素电极层和所述钝化层中“F”形图案所对应的区域进行刻蚀，形成检测孔。
8.如权利要求6或7所述的方法，其特征在于，所述有源层为金属氧化物层。
9.一种显示装置，其特征在于，包括如权利要求1-4任一项所述的阵列基板。
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