CN104089966B - 分析样品的方法、用于分析样品的带电粒子束装置和计算机可读介质 - Google Patents

分析样品的方法、用于分析样品的带电粒子束装置和计算机可读介质 Download PDF

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Publication number
CN104089966B
CN104089966B CN201410017457.3A CN201410017457A CN104089966B CN 104089966 B CN104089966 B CN 104089966B CN 201410017457 A CN201410017457 A CN 201410017457A CN 104089966 B CN104089966 B CN 104089966B
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sample
charged particle
resin
particle beam
interaction
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Chinese (zh)
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CN104089966A (zh
Inventor
E.希尔
S.比恩
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Carl Zeiss Microscopy GmbH
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Carl Zeiss Microscopy GmbH
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G01N23/2254Measuring cathodoluminescence
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2803Scanning microscopes characterised by the imaging method
    • H01J2237/2804Scattered primary beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2803Scanning microscopes characterised by the imaging method
    • H01J2237/2806Secondary charged particle
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2803Scanning microscopes characterised by the imaging method
    • H01J2237/2808Cathodoluminescence
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2809Scanning microscopes characterised by the imaging problems involved

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
CN201410017457.3A 2013-01-15 2014-01-15 分析样品的方法、用于分析样品的带电粒子束装置和计算机可读介质 Active CN104089966B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13151344.2A EP2755021B1 (en) 2013-01-15 2013-01-15 Method of analyzing a sample and charged particle beam device for analyzing a sample
EP13151344.2 2013-01-15

Publications (2)

Publication Number Publication Date
CN104089966A CN104089966A (zh) 2014-10-08
CN104089966B true CN104089966B (zh) 2018-07-27

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Country Status (4)

Country Link
US (1) US9159532B2 (enExample)
EP (1) EP2755021B1 (enExample)
CN (1) CN104089966B (enExample)
IN (1) IN2014DE00065A (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9190241B2 (en) * 2013-03-25 2015-11-17 Hermes-Microvision, Inc. Charged particle beam apparatus
JP6689602B2 (ja) * 2014-12-22 2020-04-28 カール ツァイス マイクロスコーピー エルエルシー 荷電粒子ビームシステム及び方法
US10236156B2 (en) 2015-03-25 2019-03-19 Hermes Microvision Inc. Apparatus of plural charged-particle beams
US11444213B2 (en) * 2017-06-05 2022-09-13 Fondazione Bruno Kessler Radiation detector and radiation detection apparatus
CN107727677A (zh) * 2017-09-22 2018-02-23 中国科学院地质与地球物理研究所 独居石的阴极发光成像方法
US11342155B2 (en) * 2018-05-22 2022-05-24 Hitachi High-Tech Corporation Charged particle beam device and method for adjusting position of detector of charged particle beam device
CN110376229B (zh) * 2019-06-12 2020-09-04 聚束科技(北京)有限公司 具备复合式探测系统的扫描电子显微镜和样品探测方法
DE102019208661A1 (de) * 2019-06-13 2020-12-17 Carl Zeiss Microscopy Gmbh Verfahren zum Betrieb eines Teilchenstrahlgeräts und Teilchenstrahlgerät zum Ausführen des Verfahrens
US11114274B2 (en) * 2019-12-23 2021-09-07 Carl Zeiss Smt Gmbh Method and system for testing an integrated circuit
US11257657B2 (en) * 2020-02-18 2022-02-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with interferometer for height measurement

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1411047A (zh) * 2001-09-27 2003-04-16 株式会社东芝 微细图形检查装置和方法、cd-sem的管理装置和方法
CN1720445A (zh) * 2002-10-08 2006-01-11 应用材料以色列公司 使用x-射线发射以用于制程监控的系统及方法
CN1776413A (zh) * 2004-10-14 2006-05-24 株式会社荏原制作所 信息记录介质检查装置和方法
CN1820346A (zh) * 2003-05-09 2006-08-16 株式会社荏原制作所 基于带电粒子束的检查装置及采用了该检查装置的器件制造方法
CN1822305A (zh) * 2005-02-18 2006-08-23 株式会社日立科学系统 扫描电子显微镜

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EP2388796A1 (en) * 2010-05-21 2011-11-23 FEI Company Simultaneous electron detection
WO2012118866A2 (en) 2011-02-28 2012-09-07 Schlumberger Technology Corporation Methods to build 3d digital models of porous media using a combination of high- and low-resolution data and multi-point statistics
WO2012174173A2 (en) * 2011-06-13 2012-12-20 President And Fellows Of Harvard College Multi-color nanoscale imaging based on nanoparticle cathodoluminescence
DE102012217761B4 (de) * 2012-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Verfahren zur Vermeidung von Artefakten beim Serial Block Face Imaging

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1411047A (zh) * 2001-09-27 2003-04-16 株式会社东芝 微细图形检查装置和方法、cd-sem的管理装置和方法
CN1720445A (zh) * 2002-10-08 2006-01-11 应用材料以色列公司 使用x-射线发射以用于制程监控的系统及方法
CN1820346A (zh) * 2003-05-09 2006-08-16 株式会社荏原制作所 基于带电粒子束的检查装置及采用了该检查装置的器件制造方法
CN1776413A (zh) * 2004-10-14 2006-05-24 株式会社荏原制作所 信息记录介质检查装置和方法
CN1822305A (zh) * 2005-02-18 2006-08-23 株式会社日立科学系统 扫描电子显微镜

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
quantitative cathodoluminescence mapping with application to a Kalgoorlie Scheelite;MACRAE C M ET AL.;《MICROSCOPY AND MICROANALYSIS》;20090522;第15卷(第3期);第222-230页 *

Also Published As

Publication number Publication date
CN104089966A (zh) 2014-10-08
US20140197310A1 (en) 2014-07-17
IN2014DE00065A (enExample) 2015-06-19
EP2755021A1 (en) 2014-07-16
EP2755021B1 (en) 2016-06-22
US9159532B2 (en) 2015-10-13

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