CN104078377A - Automatic vertical etching instrument for silicon crystal defects on whole wafer substrate - Google Patents
Automatic vertical etching instrument for silicon crystal defects on whole wafer substrate Download PDFInfo
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- CN104078377A CN104078377A CN201410272232.2A CN201410272232A CN104078377A CN 104078377 A CN104078377 A CN 104078377A CN 201410272232 A CN201410272232 A CN 201410272232A CN 104078377 A CN104078377 A CN 104078377A
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- etching
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- silicon crystal
- etching groove
- instrument
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses an automatic vertical etching instrument for silicon crystal defects on a whole wafer substrate. The automatic vertical etching instrument comprises a machine shell (1), etching tanks and an etching mechanical support, wherein a control panel (2) and a lifting control button (3) are arranged on the machine shell (1); the etching tanks comprise the first etching tank (4) and the second etching tank (5) which are symmetrically arranged on the two sides of the etching mechanical support, and the etching tanks are vertical; the etching mechanical support comprises a horizontal moving support body and a wafer sample support body (8); the horizontal moving support body comprises a sliding rail (6) and a sliding block (7); the wafer sample support body (8) is connected to the two sides of the sliding block (7); the sliding block (7) is connected with a lifting device (9). By the adoption of the automatic vertical etching instrument, the whole wafer substrate is etched in a vertical suspension mode and moved automatically and horizontally, chemical etching waste is effectively removed, and the false appearance of manual defects is avoided, so that the accuracy of failure analysis on the silicon crystal defects is greatly improved, and the rapidity of the failure analysis on the silicon crystal defects is improved through the double-groove design.
Description
Technical field
The present invention relates to a kind of etching instrument, particularly silicon crystal defect automatic vertical etching instrument on a full wafer wafer substrate.
Background technology
In semiconductor wafer disk is manufactured, on silicon chip, silicon crystal defect directly has influence on the productive rate that wafer is manufactured.So in general failure analysis, WRIGHT lithographic method is usually used as delineation and the analysis of silicon crystal defect on wafer substrate, and with the lattice of silicon crystal defect, crystalline phase, shape and size with judgement silicon crystal defect lead because of.In considered repealed analytical applications process, generally all adopt sample cuttings, because do so easy removal etching rubbish.But in a lot of situations, wafer manufacturing engineer wishes to use large stretch of sample, and require full wafer wafer to delineate and analyze silicon crystal defect, so that they compared whether the presenting of silicon crystal defect at each position of wafer.
Also there is no at present automatic etching analytical instrument in failure analysis laboratory applications, delineation and analysis to full wafer wafer silicon crystal defect, the conventional method adopting is to carry out horizontal delineation in selected plastic containers, but face that etching rubbish in delineation process cannot be removed, etching sanitary fill on sample, then when delineating silicon crystal defect with WRIGHT etching liquid, introduce the thorny problem of artificial defect illusion.
Summary of the invention
For above-mentioned technical problem, the present invention discloses silicon crystal defect automatic vertical etching instrument on a full wafer wafer substrate, comprising: casing 1, on it, be provided with control panel 2, and a relative side of described control panel 2 is provided with elevating control key 3; Etching groove, comprises the first etching groove 4 and the second etching groove 5, and described the first etching groove 4 and the second etching groove 5 are symmetricly set in respectively the both sides of etching machinery mount, and described etching groove is rectilinear; Etching machinery mount, it is arranged on described casing 1, is positioned at the top centre of described the first etching groove 4 and the second etching groove 5; Described etching machinery mount comprises and moves horizontally support and wafer sample support 8, the described support that moves horizontally comprises slide rail 6 and can be along the slide block 7 of slide rail 6 horizontal shiftings, described wafer sample support 8 is connected in the both sides of described slide block 7, and wafer sample is suspended on the upright arm of described wafer sample support 8 and is inserted into respectively in the first etching groove 4 and the second etching groove 5; Described slide block 7 is connected with lowering or hoisting gear 9, for etching machinery mount described in lifting, carries out the placement of wafer sample and takes off.
Preferably, the horizontal shifting of described slide block 7 distance is 1～2cm.
The invention has the beneficial effects as follows: by full wafer wafer substrate being adopted to vertical hanging formula delineation mode, and automatic horizontal movement function, by Action of Gravity Field, effectively remove the rubbish after sample etching, having overcome etching rubbish in traditional horizontal delineation cannot remove and be piled up on sample, thereby cause artificial defect illusion, the accuracy that has greatly improved the delineation of silicon crystal defect and manifested; And by described double flute, design, thereby realized the on-chip silicon crystal defect of quick delineation semiconductor full wafer wafer, improved the rapidity of failure analysis and the productive rate that semiconductor crystal wafer is manufactured; That described vertical etching instrument also has advantages of is easy and simple to handle, fast and efficiency high.
Accompanying drawing explanation
Fig. 1 is the structural representation of silicon crystal defect automatic vertical etching instrument on full wafer wafer substrate of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail, to make those skilled in the art can implement according to this with reference to specification word.
As shown in the figure, the open the present invention of the present invention discloses silicon crystal defect automatic vertical etching instrument on a full wafer wafer substrate, comprising: casing 1, on it, be provided with control panel 2, and a relative side of described control panel 2 is provided with elevating control key 3; Etching groove, comprises the first etching groove 4 and the second etching groove 5, and described the first etching groove 4 and the second etching groove 5 are symmetricly set in respectively the both sides of etching machinery mount, and described etching groove is rectilinear; Etching machinery mount, it is arranged on described casing 1, is positioned at the top centre of described the first etching groove 4 and the second etching groove 5; Described etching machinery mount comprises and moves horizontally support and wafer sample support 8, the described support that moves horizontally comprises slide rail 6 and can be along the slide block 7 of slide rail 6 horizontal shiftings, described wafer sample support 8 is connected in the both sides of described slide block 7, and wafer sample is suspended on the upright arm of described wafer sample support 8 and is inserted into respectively in the first etching groove 4 and the second etching groove 5; Described slide block 7 is connected with lowering or hoisting gear 9, for etching machinery mount described in lifting, carries out the placement of wafer sample and takes off.
Preferably, the horizontal shifting of described slide block 7 distance is 1～2cm.
Specifically tell about the course of work of silicon crystal defect automatic vertical etching instrument on a full wafer wafer substrate of the present invention below.
Embodiment 1
Fig. 1 is the structural representation of silicon crystal defect automatic vertical etching instrument on a full wafer wafer substrate of the present invention.The size of the length of described etching instrument needs according to size (wafer size comprises 4in, 6in, the size of 8in and the 12in) specific design of the wafer that will analyze.The for example wafer sample analysis to 8in, the size of the length of the etching groove of described etching instrument is respectively 250mm x 15mm x 250mm.Silicon crystal defect automatic vertical etching instrument on a full wafer wafer substrate, comprise: casing 1, on it, be provided with control panel 2, on control panel 2, be provided with mains switch (On/Off), etch period set the beginning of (Time), automated movement function and stop controlling (Start/Stop), etch period to flash caution key (Alarm) and parameter reset key (Reset).A relative side of described control panel 2 is provided with elevating control key 3, for controlling the vertical lift of lowering or hoisting gear 9; Etching groove, comprises the first etching groove 4 and the second etching groove 5, and described the first etching groove 4 and the second etching groove 5 are symmetricly set in respectively the both sides of etching machinery mount, and described etching groove is rectilinear; Etching machinery mount, it is arranged on described casing 1, is positioned at the top centre of described the first etching groove 4 and the second etching groove 5; Described etching machinery mount comprises and moves horizontally support and wafer sample support 8, described in move horizontally support and comprise slide rail 6 and can be along the slide block 7 of slide rail 6 horizontal shiftings, the horizontal shifting of described slide block 7 distance is 1～2cm.Described wafer sample support 8 is connected in the both sides of described slide block 7, and wafer sample is suspended on the upright arm of described wafer sample support 8 and is inserted into respectively in the first etching groove 4 and the second etching groove 5; Described slide block 7 is connected with lowering or hoisting gear 9, for etching machinery mount described in lifting, carries out the placement of wafer sample and takes off.
In use, its operating process comprises the following steps described etching instrument:
A, press mains switch (On/Off) to the position of On, switch on power.
B, press elevating control key 3, the upright arm of the wafer sample support 8 of etching instrument is elevated to certain height (height is determined by the size of wafer sample, also can preset).
C, wafer sample is placed on the upright arm of wafer sample support 8 and fixes.
D, in two etching grooves, inject the etching liquid of selected formula, the height of etching liquid is depending on the size of wafer sample.Guarantee that wafer sample can be invaded not in etching liquid completely.
E, press etch period and set (Time), by selected formula setting etch period.
F, press elevating control key 3 again, the upright arm of wafer sample support 8 is reduced to certain height, wafer sample is all invaded in etching liquid.
G, press Start key, start etching.It is adjustable that the upright arm of wafer sample support 8 will move 1-2cm(certainly) horizontal shifting, and drive wafer sample to move forward and backward in etching groove, make wafer sample in etching liquid by the etch period etching of setting.The chemicals rubbish that etching produces, the automated movement function in etching liquid due to Action of Gravity Field and wafer sample, is easy to drop and be dissolved in etching solution, thereby greatly reduces the contamination of chemicals rubbish to wafer sample.Etching solution is owing to there being the contamination of chemicals rubbish, thereby needs to change, and the frequency of replacing is required to determine by different etchings.
H, etch period one arrive, and instrument sends the sound automatically, and ALARM button starts flicker and warns.
I, press ALARM key, stop flicker and etching, and press elevating control key 3, the upright arm of wafer sample support 8 is elevated to certain height, the wafer sample that etching is complete takes off.
J, use the complete wafer sample of deionized water etching immediately, and with air cannon, wafer sample is dried up.
K, if any a plurality of wafer samples, to analyze, can repeat above-mentioned steps c to step j.
Although embodiment of the present invention are open as above, but it is not restricted to listed utilization in specification and execution mode, it can be applied to various applicable the field of the invention completely, for those skilled in the art, can easily realize other modification, therefore do not deviating under the universal that claim and equivalency range limit, the present invention is not limited to specific details and illustrates here and the legend of describing.
Claims (2)
1. silicon crystal defect automatic vertical etching instrument on a full wafer wafer substrate, is characterized in that, comprising:
Casing (1), is provided with control panel (2) on it, a relative side of described control panel (2) is provided with elevating control key (3);
Etching groove, comprises the first etching groove (4) and the second etching groove (5), and described the first etching groove (4) and the second etching groove (5) are symmetricly set in respectively the both sides of etching machinery mount, and described etching groove is rectilinear;
Etching machinery mount, it is upper that it is arranged on described casing (1), is positioned at the top centre of described the first etching groove (4) and the second etching groove (5); Described etching machinery mount comprises and moves horizontally support and wafer sample support (8), the described support that moves horizontally comprises slide rail (6) and can be along the slide block (7) of slide rail (6) horizontal shifting, described wafer sample support (8) is connected in the both sides of described slide block (7), and wafer sample is suspended on the upright arm of described wafer sample support (8) and is inserted into respectively in the first etching groove (4) and the second etching groove (5); Described slide block (7) is connected with lowering or hoisting gear (9), for etching machinery mount described in lifting, carries out the placement of wafer sample and takes off.
2. silicon crystal defect automatic vertical etching instrument on full wafer wafer substrate according to claim 1, is characterized in that: the horizontal shifting distance of described slide block (7) is 1～2cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410272232.2A CN104078377A (en) | 2014-06-18 | 2014-06-18 | Automatic vertical etching instrument for silicon crystal defects on whole wafer substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410272232.2A CN104078377A (en) | 2014-06-18 | 2014-06-18 | Automatic vertical etching instrument for silicon crystal defects on whole wafer substrate |
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| Publication Number | Publication Date |
|---|---|
| CN104078377A true CN104078377A (en) | 2014-10-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410272232.2A Pending CN104078377A (en) | 2014-06-18 | 2014-06-18 | Automatic vertical etching instrument for silicon crystal defects on whole wafer substrate |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1110069C (en) * | 1996-07-18 | 2003-05-28 | Lg半导体株式会社 | Semiconductor wafer wet processing device |
| US20060213542A1 (en) * | 2005-03-28 | 2006-09-28 | Dainippon Screen Mfg., Co., Ltd. | Substrate processing apparatus |
| CN1959938A (en) * | 2005-10-31 | 2007-05-09 | 旺宏电子股份有限公司 | Wet process device for etching wafer, and wet process etching method |
-
2014
- 2014-06-18 CN CN201410272232.2A patent/CN104078377A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1110069C (en) * | 1996-07-18 | 2003-05-28 | Lg半导体株式会社 | Semiconductor wafer wet processing device |
| US20060213542A1 (en) * | 2005-03-28 | 2006-09-28 | Dainippon Screen Mfg., Co., Ltd. | Substrate processing apparatus |
| CN1959938A (en) * | 2005-10-31 | 2007-05-09 | 旺宏电子股份有限公司 | Wet process device for etching wafer, and wet process etching method |
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Application publication date: 20141001 |