CN104078301B - There is the temperature in the rf tank of heater and air amplifier control - Google Patents
There is the temperature in the rf tank of heater and air amplifier control Download PDFInfo
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- CN104078301B CN104078301B CN201410119441.3A CN201410119441A CN104078301B CN 104078301 B CN104078301 B CN 104078301B CN 201410119441 A CN201410119441 A CN 201410119441A CN 104078301 B CN104078301 B CN 104078301B
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- temperature
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
Abstract
The temperature that the present invention relates to have in the rf tank of heater and air amplifier controls, it is proposed that be used for the system of temperature of window, the method and computer program controlling in semiconductor manufacturing room.A kind of device includes air amplifier, plenum space, heater, temperature sensor and controller.Air amplifier is coupled to pressurization gas and produces air stream on startup.Air amplifier is additionally coupled to plenum space and heater.Plenum space receives described air stream and makes described airflow distribution on the window of plasma chamber.When heater is activated, described air stream is heated in processing procedure, and when heater does not start, described air stream cools down described window.Temperature sensor is positioned at around the window of plasma chamber, and controller is defined to start both air amplifier and heater based on the temperature recorded by temperature sensor.
Description
Technical field
The present invention relates to for control the system of the temperature in semiconductor manufacturing facility, method and
Computer program.
Background technology
Apparatus for processing plasma can be used for making material from by such as quasiconductor or glass
Substrate etch fall.Apparatus for processing plasma can comprise and surrounds the true of plasma processing gas
Empty room, described gas can be ionized and be transformed into plasma.Such as, driving source (radio frequency
(RF), microwave or other source) process gas can be applied energy to produce plasma.?
In some apparatus for processing plasma, energy can be passed by the dielectric window formed through vacuum chamber
Send.Therefore, dielectric window can meet with the heating caused by electromagnetic energy.Additionally, this heating can be due to
The change of the electromagnetic energy caused because of process conditions and be confined to the specific region of dielectric window.Dielectric window
Can there be two heating sources.First, the dielectric property (tangent-δ) of window may result in radio frequency
(RF) or microwave power directly absorb.Secondly, driving source the plasma produced can between
Connect this window of heating.Additionally, due to source (antenna configuration etc.) and the design of condition of plasma,
Heating can be uniformly distributed at whole dielectric window or be confined to the specific region of this window.
Can passively remove heat energy (that is, without cooling device) from dielectric window or use cooling device
(such as liquid-cooling system or fan cooling system) removes heat energy.Liquid-cooling system can be
Efficient still more expensive than passive cooling or fan cooling system.Additionally, liquid-cooling system
More difficult enforcement in the environment have electromagnetic energy.Such as, liquid cooling may result in Local cooling, makes
Become thermal gradient and thermal cracking.The dielectric property of liquid is different from the pottery of surrounding, and it causes RF merit
The uneven transmission of rate.Such as, liquid can conduct, and this can cause RF power in liquid
Loss.Liquid can nucleation can be difficult to be included in cooling system.
Fan cooling system can be used for cooling down dielectric window, such as, such as, is cooled down by convection current
Dielectric window.But, fan cooling system can be inefficent and be dfficult to apply to by dielectric window
In the of a relatively high regional area of the thermic load that causes of driving source.Specifically, be suitable to and etc.
The fan cooling system that gas ions processing equipment is used together for the heat radiation in time having high back pressure is
Inefficent.
Accordingly, there exist the alternate device cooling down dielectric window for apparatus for processing plasma
Demand.Propose embodiments of the present invention in this context.
Summary of the invention
Propose manufacture in room by managing semiconductor the system of temperature of window, method and based on
Calculation machine program.Should be appreciated that embodiments of the present invention can be implemented in numerous ways, these sides
Computer journey on formula such as method, device, system, equipment or computer-readable medium
Sequence.Some embodiments are described below.
In one embodiment, a kind of device includes air amplifier, plenum space, heating
Device, temperature sensor and controller.Air amplifier is coupled to pressurization gas and (such as compresses sky
Gas) and produce air stream on startup.Air amplifier is additionally coupled to plenum space and heating
Device.Plenum space receives described air stream and makes described airflow distribution at the window of plasma chamber
On.When heater is activated, described air stream is heated in processing procedure.Temperature sensing
Device is positioned at around the window of plasma chamber, and controller is defined to survey based on by temperature sensor
The temperature obtained starts air amplifier and/or heater.
In another embodiment, it is provided that for the method processing semiconductor equipment.The party
Method includes starting, for for the first time, the operation that restriction produces the air amplifier of air stream, and
The heater being coupled to air amplifier is started to heat the behaviour of described air stream for for the first time
Make.Air stream is distributed on the window of plasma chamber.Additionally, the method includes at window
Temperature reach to disable during the first predetermined value another operation of air amplifier and heater.The party
Method includes starting air amplifier for the second time when temperature reaches the second predetermined value but not starting
Heater is to cool down another operation of described window.Then, open when temperature is less than three predetermined values
Dynamic air amplifier.In one embodiment, the operation of described method is performed by processor.
In yet, semiconductor-fabricating device includes multiple air amplifier, fills
Headroom, multiple heater, one or more temperature sensor and controller.Multiple air
Amplifier is coupled to pressurization gas, and each air amplifier produces air stream on startup.Inflation
Space includes multiple piecemeal (section), and each piecemeal is coupled to respective air amplifier, its
In each piecemeal receive air stream and each piecemeal by described sky from described respective air amplifier
Air flow method is on the window of plasma chamber.Each heater is coupled to respective air and amplifies
Device so that when air stream is activated in each heater processing procedure in plasma chamber
Heated.One or more temperature sensor is arranged on around the window of plasma chamber, and controller
It is defined to one or more temperature based on being recorded by one or more temperature sensor described start
Each air amplifier and start each heater.
By the detailed description carried out below in conjunction with the accompanying drawings, other side can become apparent.
Accompanying drawing explanation
By embodiment being best understood with reference to the explanation carried out below in conjunction with the accompanying drawings.
Fig. 1 schematically depict according to one or more embodiment party shown and described herein
The apparatus for processing plasma of formula.
Fig. 2 schematically depict according to one or more embodiment party shown and described herein
The plenum space of formula.
Fig. 3 schematically depict according to one or more embodiment party shown and described herein
The plenum space segmentation (segment) of formula.
Fig. 4 A shows and couples to add hot-air with air amplifier according to an embodiment
The heating element of stream.
Fig. 4 B show according to an embodiment air amplifier and be attached to inflation sky
Between conduit between the heating element of series coupled.
Fig. 5 shows not having directly over the dielectric window of plenum space according to an embodiment
Air stream source of supply.
Fig. 6 shows the room with multiple plenum space according to an embodiment.
Fig. 7 A-7D shows window different configuration of some utilizing pressure-air cooling room
Embodiment.
Fig. 8 is the side of the temperature for managing window in processing procedure according to an embodiment
The flow chart of method.
Fig. 9 is the flow process of the method for the temperature of the window for caretaker room according to an embodiment
Figure.
Figure 10 A is to survey by the difference of the air described window of cooling according to illustrating of an embodiment
The chart of the result of examination.
Figure 10 B shows the temperature controlled embodiment party elapsed over time of dielectric window
Formula.
Figure 11 is that the simplification of the computer system for implementing embodiment as herein described is shown
It is intended to.
Detailed description of the invention
Ensuing embodiment describes for controlling temperature in semiconductor-fabricating device
Method and apparatus, more specifically, the method describing the temperature for controlling RF room dielectric window
And device.
Obviously, embodiments of the present invention can not have some or all of these details
In the case of implement.On the other hand, known technological operation will not be described in detail in order to avoid need not
Strategic point obscures embodiments of the present invention.
Fig. 1 schematically depict according to one or more embodiment party shown and described herein
The apparatus for processing plasma of formula.Apparatus for processing plasma generally includes vacuum chamber, sealing should
The dielectric window of the opening of vacuum chamber, energy source, at least one air amplifier and at least one
Individual heating element heater.Apparatus for processing plasma and Cement Composite Treated by Plasma be will be described in further detail at this
The various embodiments of the operation of equipment.
Apparatus for processing plasma 100 includes for surrounding in the processing procedure of substrate 24
The vacuum chamber 20 of plasma processing gas and plasma.Vacuum chamber 20 can be by being arranged to
The metal material of reference potential is made.Substrate 24 is placed in vacuum chamber 20 to process.
Vacuum chamber 20 can surround plasma processing gas, and described plasma processing gas can include halogen
Element or halogen, such as, such as fluorine (F), chlorine (Cl), bromine (Br), iodine (I) and astatine
(At).Additionally, concrete process gas can include CClF3、C4F8、C4F6、CHF3、
CH2F3、CF4、HBr、CH3F、C2F4、N2、O2、Ar、Xe、He、H2、NH3、
SF6、BCl3、Cl2, and can other gas ionizable.
Apparatus for processing plasma 100 includes dielectric window 10, and electromagnetic energy is transmittable through being situated between
Electricity window 10.Dielectric window 10 includes the plasma being configured to be exposed to the inside of vacuum chamber 20
Exposed surface and air exposed surfaces 14.Dielectric window 10 can (such as be had by transmitted electromagnetic
The electromagnetic energy of the frequency range of 100kHz to 100MHz) dielectric material make.Suitably it is situated between
Electric material includes quartz and pottery, and pottery includes such as aluminium nitride (AlN), aluminium oxide
(Al2O3) or there is other refractory material any of similar transmission property.
Energy source 30 produces and be enough to make the electromagnetic energy of plasma processing gas ionizing.Energy
Amount source 30 can include interior loop 32 and exterior loop 34.Noting, energy source 30 can include making suitable
In the coil of any shape producing electromagnetic energy, such as, angled such as toward each other around transferring
Formed facet concentric segmented (segment), scroll conductor, toroid coil-shaped conductor or
Combinations thereof.
Energy source 30 can produce electromagnetic energy, such as, such as in vast power bracket
Power bracket is of about 50W to about 20kW in some embodiments, at an embodiment
In greater than about 2kW, the most about 3kW, or the most about
4.5kW.In some embodiments, interior loop 32 and exterior loop 34 couple each other in an electrically conductively.
In other embodiments, can be by multiple RF generators to multiple coil power supplies.Note, although
Energy source 30 is depicted as the RF source of multi-coil, but energy source can be to produce electromagnetic energy
Thus produce any equipment of inductively coupled plasma, it is such as but not limited to radio frequency (RF)
Source, electron cyclotron resonace (ECR), microwave horn, slot antenna or use is wrapped cylinder
The helical source of the helical antenna of shape window.Apparatus for processing plasma 100 optionally include for
Dielectric window 10 draws the plenum space 40 of airflow guiding.
In a kind of embodiment of apparatus for processing plasma 100, vacuum chamber 20 can coupling
Close dielectric window 10.Such as, the opening of vacuum chamber 20 can be the closeest by dielectric window 10
Envelope.Specifically, the plasma exposed surfaces of dielectric window 10 is at apparatus for processing plasma
The operating process of 100 can be exposed to plasma and/or plasma processing gas.Note,
Although dielectric window 10 is depicted as being connected to the top of vacuum chamber 20 in FIG, but dielectric window
Any part being suitable to reception electromagnetic energy of 10 salable vacuum chambers 20.
In some embodiments, apparatus for processing plasma 100 can include for heating Jie
The electricity part of window 10 also reduces the heater 26 of stress in dielectric window 10.Other embodiment party
Formula does not then include heater 26 in apparatus for processing plasma 100.Additionally, other are implemented
Mode can include the heating element being coupled to air amplifier with heating dielectric window 10, as hereafter
With reference to Fig. 4-6 in greater detail.
Energy source 30 may be provided at the outside of vacuum chamber 20 neighbouring dielectric window 10.Inflation
Space 40 may be configured as neighbouring energy source 30 and dielectric window 10 makes plenum space 40 and dielectric
The air exposed surfaces 14 of window 10 is in fluid communication.In one embodiment, plenum space 40
Between interior loop 32 and exterior loop 34.
In operation, energy source 30 transmits electromagnetic energy and through dielectric window 10 and enters very
Empty room 20 is to be transformed into plasma by least one of plasma processing gas.A part
Electromagnetic energy be transformed into the heat energy that can be absorbed by dielectric window 10.Specifically, some electromagnetic energy
Heat can be changed into according to the dielectric property of dielectric window 10 and a portion electromagnetic energy can be incited somebody to action in room
Gas ions processes and is absorbed that (such as, dielectric window 10 can lead to after gas ionization by dielectric window 10
Cross plasma exposed surfaces by plasma heating).Therefore, the temperature of dielectric window 10 can be because of
Electromagnetic energy raises.In some embodiments, electromagnetic energy is anisotropic to make dielectric window 10
Different piece bear the electromagnetic energy of varying number.Believe that the heat that sensed in dielectric window 10 can be with
The amount of the electromagnetic energy being conveyed through dielectric window 10 is associated.Such as, in enforcement described herein
In mode, the electromagnetic energy of greater than about 40% can be absorbed by dielectric window 10 as heat.Dielectric window can be inhaled
It is incorporated as the electromagnetic energy for hot at least about 0.4kW, such as, is more than the most in one embodiment
1kW, the most about 1.5kW, or be about in yet
2.25kW.Accordingly, with respect to the other parts of dielectric window 10, dielectric window 10 bear by
The part of the heat of the of a relatively high quantity that electromagnetic energy causes can be formed the temperature province of rising
(focus).
Apparatus for processing plasma 100 includes for providing air to plenum space 40 extremely
A few air amplifier 60.Air amplifier 60 is coupled to inflation by one or more conduit 50
Space 40.Note, although Fig. 1 depicts 4 air amplifiers 60 and 4 conduits 50,
But apparatus for processing plasma 100 can have and be enough to provide dielectric window 10 sufficiently cooling to appoint
The air amplifier 60 of meaning quantity and conduit 50.Some embodiments described below are included in Jie
The plenum space of the varying number of the diverse location on electricity window 10.Additionally, some embodiments can
Air stream is provided in the case of not using plenum space on dielectric window.
The air being supplied to plenum space 40 can be by passive purge (purge).Such as, fill
Headroom 40 can be enclosed in pressure control room 22.Pressure control room 22 can be maintained at low
Under the pressure of atmospheric pressure, the outlet 44 of plenum space 40 can be directly entered pressure by purging air
Strong control room 22.The air of purging can pass through gas extraction system (not shown in Fig. 1) from pressure control
Room 22 processed removes.In another embodiment, pressure control room 22 can be maintained at higher than big
Under the pressure that air pressure is strong, the outlet 44 of plenum space 40 can be directly entered pressure control by purging air
Room 22 processed.The air of purging can pass through vent (not shown in Fig. 1) from pressure control room 22
Remove.In further embodiment, plenum space (can not schemed in Fig. 1 with exhaustor
Show) it is in fluid communication with the outside by air passive purge to apparatus for processing plasma 100.
Additionally or alternatively, can be from plenum space 40 actively purging air.Such as, one
Or multiple air amplifier 60 can be in fluid communication with plenum space 40 and be configured to from inflation sky
Between 40 remove air.Accordingly, although Fig. 1 depicts the conduit 50 in the device only inputted,
But conduit 50 can be configured to provide from the air of plenum space 40 and/or from plenum space 40
Remove air.Although additionally, air amplifier 60 is depicted as providing air to inflation sky by Fig. 1
Between 40, but the entrance 62 of air amplifier 60 can connect with the outlet 44 of plenum space 40 with
Air is removed from plenum space 40.
Inject air stream with at least one air amplifier 60 and can produce substantial amounts of back pressure, this
The air stream towards dielectric window 10 can be suppressed.According to some embodiments, plenum space 40 leads to
Often it is pressurized at least about 1 inches of water(in H2O) (in-H2O) back pressure, such as, such as real one
Execute in mode, greater than about 2in-H2The back pressure of O.Furthermore, it is noted that the behaviour of air amplifier 60
Need not back pressure.
Fig. 2 schematically depict according to one or more embodiment party shown and described herein
The plenum space of formula.Plenum space 40 is formed as partial closure's body and includes one or more entrance 42
44 are exported with one or more.Accordingly, air can be received and quilt by the entrance 42 of plenum space 40
Introducing to have back pressure at least part of by plenum space 40 around pressure region in.Inflation sky
Between 40 can be divided into multiple segmentation 46, herein also referred to as branch so that Mei Gefen by partition wall 48
Section includes at least one entrance 42 and at least one outlet 44.
Note, although plenum space 40 is depicted as being generally annular, but plenum space
40 can be tailored to provide air to any shape in the region of dielectric window 10.An embodiment party
In formula, plenum space 40 is made up, such as, such as of passive material (passive material)
Politef (PTFE or " teflon "), polyether-ether-ketone (PEEK), Polyetherimide
(PEI or " ultem "), pottery or other electromagnetic energy transmission material any, and other material
Also it is feasible.
Fig. 3 schematically depict according to one or more embodiment party shown and described herein
The plenum space part of formula.Plenum space 40 can be formed single-piece or be formed as combining with each other
Multiple segmentations.Specifically, as depicted in figure 3, inflation segmentation 140 can include shape
Become the multiple outlets 144 in inflation segmentation 140.Inflation segmentation 140 can be generally wedge shape
And be configured to combine to seal substantially cylindrical region with other inflation segmentation 140
Or substantially ring-like region.Note, plenum space as herein described can be arranged to be suitable to
Energy source 30 coordinate and provide compression cooling stream to dielectric window 10 or region desired by it any
Shape.
Fig. 4 A shows and is coupled to air amplifier to heat offer according to an embodiment
Heating element to the air stream of dielectric window.As previously discussed in reference to Figure 1, plasma
Body processing equipment 100 includes for providing air to plenum space 40 or the window 10 directly to room
At least one air amplifier 60.Each air amplifier 60 includes for receiving input air
The entrance of 72, for the air vent 64 of delivery air 70 be used for receiving pressurized air 68(example
As, clean dry air, compressed air) control input 66.It is not bound by any concrete reason
Opinion, it is believed that, compared to the pressurized air 68 according to bernoulli principle and Coanda effect, inject
The pressurized air 68 controlling input 66 provides relatively high number of air 70.When heater 74
When not starting (such as, close), the stream of air 70 is used as cooling down air, and when heating
When device 74 is activated (such as, open), it is cold to heat that the stream of air 70 is used as hot-air
But window.In one embodiment, plenum space 40 is annular and is positioned at interior loop 32 He
Between exterior loop 34.Note, although Fig. 4 A merely illustrates an air amplifier 60, but
Other air amplifier can be coupled to be coupled to each conduit 50 of plenum space 40.
In one embodiment, heating element 74 started before starting substrate processing
(such as, opening) is to make window be increased to predetermined temperature.Once window arrives predetermined temperature, adds
Hot device element 74 is deactivated (such as, turning off) and RF and powers on to start plasma in room
Process.In one embodiment, during substrate process operations, the temperature of window passes through temperature
Sensor monitoring, and when temperature reaches the second predetermined temperature, air amplifier 60 is activated
(not starting heating element 74) is to provide cooling air 70 to TCP window 10.
After window is cooled to the 3rd predetermined temperature, air amplifier 60 is deactivated.This
Mode, make the temperature of window 10 be maintained in temperature range, it is to avoid causing on window 10
Breakage or the thermal stress of fault.Ability by the air flow control temperature being supplied to window will be to room work
The more preferably control of skill gives design engineer.Such as, the target processed in step is to maintain window
Less than 120 DEG C.But, there is the ability more effectively cooling down window with described embodiment, room
Technique just can in relatively low temperature operation, this relatively low temperature such as 60 DEG C, 80 DEG C, at 50 DEG C
In scope between 100 DEG C, etc..
Pressurized air 68(such as, compressed air) can be with compared to air amplifier 60
The speed that the air of outside is of a relatively high enters air amplifier 60.Compressed air 68 can be directed
Air vent 64 towards air amplifier 60.According to Coanda effect, pressurized air 68 can be big
On body, the annular boundary along air amplifier 60 is advanced.
Air amplifier 60 can provide appropriate number of air by the speed of at least about 20cfm
70, such as, such as speed the most about 20cfm is to about 3000cfm, at another
In embodiment, about 25cfm is to about 900cfm, the most about 30cfm to about
230cfm or in further embodiment about 125cfm to about 230cfm.
In one embodiment, at least one air amplifier 60 is by one or more conduit
50 are in fluid communication with plenum space 40.One or more conduit 50 can be made up of passive material, than
As, such as teflon, PEEK, ultem, pottery or other electromagnetic energy transmission material any.
In some embodiments, non-transmittive material is used.Such as, if using microwave source to produce
Plasma, then conduit goods can be made of metal.
Each conduit 50 can include the amplification of the air vent fluid communication with air amplifier 60
Device aperture and the plenum space aperture of the fluid communication with plenum space 40.Accordingly, empty
Gas amplifier 60 can by conduit 50 and plenum space 40 supply cooling air or add hot-air to
Dielectric window 10.
Fig. 4 B show according to an embodiment air amplifier and be attached to inflation sky
Between conduit between the heating element of series coupled.Heating element can be at air amplifier 60
Before or after series coupled.Before Fig. 4 A shows that heating element is positioned at air amplifier 60
The embodiment in face, i.e. input air 72 first passed through heating before entering air amplifier 60
Device element.
In the embodiment of Fig. 4 B, heating element 74 is coupled in series in air and amplifies
Between device 60 and conduit 50.In this case, input air 72 enters air amplifier,
Then, from air amplifier delivery air out towards conduit 50 through before first added
Heat.
Additionally, plenum space 40 can directly contact with window 10, as shown in Figure 4 A.?
In other embodiment, plenum space can be spaced apart with window 10 to allow below plenum space
Air flow radiating cloth is on window 10.Offset distance between plenum space 40 and window 10 can be suitable
In the distance of the effectively cooling promoting dielectric window 10, such as, it is more than the most in one embodiment
About 0.25mm, or it is about 2mm in another embodiment.Fig. 4 B shows plenum space
The embodiment spaced apart with window, but other embodiment can have the inflation sky contacted with window 10
Between 40.
Fig. 5 shows not having directly over the dielectric window of plenum space according to an embodiment
Air stream source of supply.In one embodiment, air is not in the case of having plenum space 40
It is guided through conduit and is fed on dielectric window 10.Such as, air stream is at the end of conduit 50
Conduit 50 leaves and towards window 10 in portion, causes the air contact window 10 exiting this conduit.
In some embodiments, can have and be supplied directly to the air of window and via filling from conduit
Headroom is supplied to the mixture of the air of window.An embodiment is given below with reference to Fig. 7 D.
Noting, the embodiment shown in Fig. 4 A, 4B and 5 is exemplary.Other
Embodiment may utilize different conduits and plenum space, or other position on window is arranged
Plenum space, etc..Therefore, the embodiment shown in Fig. 4 A, 4B and 5 should be by
Be construed to exclusiveness or restrictive, and should be interpreted exemplary or illustrative.
Fig. 6 shows the room with multiple plenum space according to an embodiment.Real one
Executing in mode, substrate diameter is 300mm, but same principle is applicable to the crystalline substance of any size
The wafer of sheet, such as 450mm.Fig. 6 shows have two coils (interior loop 32 and outer
Coil 34) and the room of two plenum spaces (interior plenum space 40 and outer plenum space 86).
Noting, in figure 6, conduit 50 is positioned at air amplifier 60 and below and is omitted in order to avoid obscuring
The details of room.
Room 100 includes that the offer RF power being coupled to matching network 110 is to TCP room
RF generator 108.Additionally, this room includes the offer RF power being coupled to matching network 124
To the 2nd RF generator 122 of the bottom electrode in room.
System controller 104 includes the computer program operation with caretaker room.Computer program
Receive plasma recipes and 106(be set such as, in computer-readable medium), plasma
Formula arranges 106 and determines for performing each step in room to process the setting of substrate.System
Controller 104 is coupled to the different elements of room and can control how different elements operates, example
As opened or closed RF power, starting or disable air amplifier or heater, introducing in room
Plasma gas, etc..Fig. 6 showing, some from system controller 104 connect
Part, and it has been omitted in order to avoid fuzzy graph 6 thin from other connector of system controller 104
Joint.
In one embodiment, actuator 82 be positioned at compressed air source and air amplifier or
Between heater.System controller be operable to control to adjust device 82 in case control feeding to
The compressed-air actuated quantity of air amplifier.In one embodiment, actuator 82 has two kinds
State: on an off.In open state, actuator 82 makes pressurized air 80 enter air amplifier
Or heater, any resistance to air stream is not provided.In off status, air stream is not had to provide
To air amplifier or heater.In other embodiments, actuator 82 can have multiple shape
State, every kind of state provides the pressurized air 82 of varying number to air amplifier 60.By this side
Formula, system controller 104 can provide the air of varying number by temperature based on dielectric window
And better control over the temperature on dielectric window.Such as, the highest temperature has been reached when dielectric window
Time, system controller can start actuator 82 to provide air as much as possible, and relatively low
During temperature, system controller can start actuator 82 to provide small number of air.
One or more temperature sensor 84 provides hot reading to system controller to perform uncommon
The temperature treatment program hoped.In one embodiment, each actuator can be relative to its in room
Its actuator independent startup, thus provide the temperature in the zones of different to window for system controller
More preferable tuning.Such as, if the central area of window becomes the desired heat of ratio, and the outside of window
Region operates at desired temperature, and system controller 104 can start above interior plenum space 40
The actuator controlling air amplifier, and do not start and be coupled to the air of outer plenum space 86 and put
Big device.Similarly, if the piecemeal of the most fenestrate central area becomes the desired heat of ratio, it is then
System controller 104 can start the air amplifier being coupled to single piecemeal, and does not start for coupling
Close the actuator of all air amplifiers of plenum space.
Fig. 7 A-7D shows window different configuration of some utilizing pressure-air cooling room
Embodiment.Fig. 7 A is the plasma for etching operation according to an embodiment of the present invention
The top view of body processing system.As previously mentioned, it is shown that TCP coil include interior loop (IC)
32 and exterior loop (OC) 120.Fig. 7 A shows and room 102 according to an embodiment of the present invention
Used in the interior loop of TCP coil and each circle being associated in exterior loop around
Group, and for cooling or the relative position of the element of heating dielectric window.Should be appreciated that other
The coil configuration of type is also feasible.
Connecting relative to providing for cooling or the unit of heating dielectric window between end turn
Part: air amplifier 68, heater 66 and plenum space 40 are illustrated.It is possible that have
The dimension coil (dimensional coil) of offer dome type structure, and non-planar coil distribution
Other coil form structure.According to the structure being associated with the geometry of TCP coil, adjustable
Plenum space and be coupled to the position of conduit and the shape of plenum space.
4 air amplifiers are had: two are positioned at room in the embodiment shown in Fig. 7 A
On side, another two is positioned on this room opposite side.By this way, 4 conduits provide air
To each piecemeal of plenum space 40.In other embodiments, air amplifier can be changed
Position, such as has an air amplifier, all air amplifiers all on every side of room
It is positioned in the same side of room, etc..Accordingly, in one embodiment, each conduit and inflation sky
Junction point between is adjusted to adapt to geometry, thus all conduits can be coupled
To the air amplifier being positioned at outdoor face.
Fig. 7 B shows the 450mm's with 3 coils according to an embodiment
Room.For not fuzzy graph 7B, for describing succinct purpose, some connectors and element by
Omit.In one embodiment, shown each conduit be coupled to provide cooling air or
The air amplifier of warm air.Cooling and heating arrangement 702 include that air amplifier, air are put
Big device actuator, heater, temperature controller, etc..System controller 104 is coupled to room
In different elements in case the heat started or stoped on dielectric window or cold air stream.
Room in Fig. 7 B includes 3 coils: interior loop, intermediate coil and exterior loop.Separately
Outward, room includes interior plenum space and a plenum space.Interior plenum space is positioned at interior loop and centre
Between coil, and outer plenum space is between intermediate coil and exterior loop.By in not same district
Arranging two different plenum spaces in territory, system controller 104 can provide on dielectric window
Preferably temperature controls.One or more temperature sensor is distributed to provide generally surround dielectric window
The temperature measurement result of zones of different.In one embodiment, a temperature sensing is only used
Device, in other embodiments, each piecemeal of plenum space or segmentation have respective and its
The temperature sensor being associated, but other configuration of temperature sensor is also feasible.
In one embodiment, interior plenum space includes 4 different piecemeals, and inflates outward
Space includes 8 different piecemeals, and in view of the diameter that it is bigger, this can better control over to outward
The air stream of plenum space.Each plenum space of other embodiment can use varying number
Piecemeal, such as one, two, three, six, etc..
In the embodiment shown in Fig. 7 B, each piecemeal of plenum space is respectively provided with relevant
Temperature sensor, air amplifier and the heater of connection.Temperature control in system controller 104
Measurement result that program monitoring processed obtains from different temperatures sensor startup or disable air and amplify
Device and heater are to maintain the respective region being associated with each piecemeal under desired temperature.
But, other temperature-controlled process is also feasible, such as opens or closes sky in the same time
Gas amplifier or open or close all air being associated with one of plenum space simultaneously and put
Big device.
Fig. 7 C shows the top view of the room with 3 coils and 3 plenum spaces.Extremely
Some in the connector of cooling and heating arrangement 702 have been omitted in order to avoid obscuring the thin of this framework
Joint.3 plenum spaces and coil are that the center of annular and the window above process chamber is handed over towards circumference
For arranging.
In one embodiment, interior plenum space has 4 piecemeals, middle plenum space tool
There are 6 piecemeals, and outer plenum space has 8 piecemeals, but for each plenum space,
The piecemeal of other quantity is also feasible.3 different plenum spaces are used to achieve on window
Temperature controlled fine setting.As it has been described above, be coupled to different piecemeal air amplifier can based on from
Generally surround dielectric window arrange temperature sensor obtain the whole one-shot of temperature reading or
It is activated individually.
In another embodiment that Fig. 7 C is not shown, lead to the conduit of different plenum space
The air of this one or more air amplifier can be shared.Such as, in one embodiment, two
The stream produced by an air amplifier shared by individual conduit, and in other embodiments, is more than
The conduit of two can be coupled to identical air amplifier.Share an air at two piecemeals to put
In the case of big device, identical conduit can be used for being coupled to air amplifier two different
Piecemeal, this conduit has two and exits outlet (rather than an outlet), and each piecemeal one goes out
Mouthful.
Fig. 7 D show have 2 coils, 2 air amplifiers and above window directly
The room of air stream and multiple conduits without plenum space is provided.In some embodiments, exist
Without at least one air amplifier can be used in the case of plenum space.Reality shown in Fig. 7 D
The mode of executing includes 3 coils and 2 plenum spaces.First plenum space be positioned at interior loop and in
Between between coil, the second plenum space is positioned at outside exterior loop.It addition, multiple conduits provide sky
Air-flow is to the center of window, between intermediate coil and exterior loop, it is not necessary to use plenum space.
In one embodiment, by air feed to the outfan of the conduit of window relative to dielectric
The air exposed surfaces 14 of window 10 is vertical orientated.Accordingly, at least one air amplifier 60
Air vent 64 can be orientated relative to dielectric window 10 so that cooling air 70 is along generallyperpendicular
Path flowing in the air exposed surfaces 14 of dielectric window 10.Another not shown embodiment party
In formula, at least one air amplifier 60 becomes relative to the air exposed surfaces 14 of dielectric window 10
Bevel angle α is orientated.Accordingly, the air vent 64 of at least one air amplifier 60 can be relative to Jie
Electricity window 10 is orientated so that cooling air 70 is along the air exposed surfaces 14 with dielectric window 10
The path flowing of bevel α alignment.Noting, bevel angle α can be adapted for controlling dielectric window 10
Temperature arbitrarily angled.
Noting, the embodiment shown in Fig. 7 A-7D is exemplary.Other embodiment
The coil of varying number, plenum space, conduit, piecemeal can be used, etc..So, figure
Embodiment shown in 7A-7D is not construed as exclusiveness or restrictive, and answers
Exemplary or illustrative when being interpreted.
Fig. 8 is the flow chart of the method for the temperature for managing window in processing procedure.Behaviour
Making in 802, heater is opened, and then opens air amplifier in operation 804.Knot
Really, the air exiting air amplifier can become the air heated.The method is from operation 804
Proceed to operate 806, carry out having checked to determine temperature t of dielectric window the most in operation 806
Reach heating-up temperature t of requirements.The method repeat operation 806 in inspection hatch temperature until
Temperature t reaches required heating-up temperature ts, then, the method proceeds to operate 808, wherein
Heater and air amplifier are closed.
The method proceeds to operate 810 from operation 808, in operation 810, starts in room
The process of substrate, such as, opens RF power and lights plasma in room.The method is from behaviour
Make 810 to proceed to operate 812, carry out checking to determine temperature t of dielectric window in operation 812
Whether it is higher than the high threshold t of temperatureh.If temperature t is higher than temperature th, then the method proceeds to behaviour
Making 814, otherwise the method proceeds to operate 816.
In operation 814, air amplifier is opened, unless air amplifier economy-combat
Open.The method proceeds to operate 816 from operation 814, carries out checking to determine in operation 816
Whether temperature t is less than Low threshold temperature tl.If temperature t is less than temperature tl, then the method is carried out
To operation 818, and if temperature t is not less than temperature tl, then the method proceeds to operate 820.
In operation 818, air amplifier is switched off, unless air amplifier has closed
Close.The method proceeds to operate 820 from operation 818, carries out checking to determine lining in operation 820
Whether the process at the end completes.If processed, the method proceeds to operate 822 to terminate lining
The process at the end, and if process be not fully complete, then the method returns to operate 812 to repeat above-mentioned temperature
Degree checks.
Fig. 9 is the flow process of the method for the temperature of the window for caretaker room according to an embodiment
Figure.Operation 902 in, air amplifier is activated, air amplifier may operate to wait from
Daughter manufactures and produces air stream on the dielectric window of room.
The method proceeds to operate 904 from operation 902, in operation 904, is coupled to air
The heater of amplifier is activated.Once heater is activated, and such as, opens, is then supplied to
The air stream of the window on plasma chamber will include the air heated.
The method proceeds to operate 906 from operation 904, in operation 906, the temperature in window
Degree disables air amplifier and heater after reaching the first predetermined temperature value.The method is from operation
906 proceed to operate 908, in operation 908, after the temperature in window reaches the second predetermined value
Start air amplifier, but do not start heater, thus cool down window.
The method proceeds to operate 910 from operation 908, in operation 910, the temperature in window
Degree disables air amplifier less than after the 3rd predetermined value.
Figure 10 A is to survey by the difference of the air described window of cooling according to illustrating of an embodiment
The chart of the result of examination.The temperature on measurement window at the difference along the radius of window.Connect
, by under different power levels and utilize different air amplifier pressure to operate
Room and carry out some experiments.Test is held on the test processes room be similar to the room shown in Fig. 1
OK.
Lines 952 show that the RF power using 4.5kW is grasped under using at 30cfm
The data during air amplifier made, lines 954 show in the case of 4.5kw and 120cfm
Data, lines 956 show the number during air amplifier used under 2kW and 30cfm
According to.Result shows, the temperature on window is away from the inch of center 5 (between two RF coils
Region) the highest, be provided with plenum space.
According to an embodiment, result shows, when at relatively low power (such as, 2kW)
During lower operation, 30cfm be enough to cool down window.But, under at 4.5kW during operation, 30cfm is not
Temperature at hottest point in window can be brought down below about 200 DEG C.The air amplifier of 120cfm carries
For sufficiently cooling the maximum temperature on window to be down to about 180 DEG C.
Noting, the embodiment shown in Figure 10 is exemplary.Utilize for testing window
The design parameter of temperature obtains the result about test cabinet.Other embodiment can produce different
As a result, and described result should not be regarded as any performance requirement phase with described embodiment
Close.So, the embodiment shown in Figure 10 is not construed as exclusiveness or restricted
, and should be interpreted exemplary or illustrative.
Figure 10 B shows the temperature controlled embodiment party elapsed over time of dielectric window
Formula.Initially at t0, air amplifier (AA) and heater are opened, and RF power closes
Close, so that the temperature of dielectric window reaches desired temperature ts.In one embodiment, air amplifies
Device is adjusted to 50% time operation at load, because the whole power that need not air stream add
Hot window.Certainly, in other embodiments, air amplifier can be under (100%) at full capacity
Run.
At t1, temperature reaches ts, air amplifier and heater be closed, RF merit simultaneously
Rate is opened, and prepares for the process in plasma chamber.When RF power is provided to room,
Temperature gradually rises and reaches t to ith.At t2, air amplifier is at (such as 100%) at full capacity
Under be opened to begin to cool down window.
As the result of the cooling of air stream, the temperature on window cools down.At t3, temperature
Reach tl, this is off the Low threshold of cooling.As a result, air amplifier is at t3It is closed.Temperature
Start again to rise.In one embodiment, formula needs with air amplifier in various degree
Property regulation temperature.At t4, air amplifier is quilt under less than (such as 60%) at full capacity
Open to reach maximum temperature t at ithBegin to cool down window before.
As the result of cooling, the temperature on window keeps substantially constant a period of time until it is opened
Begin again to rise (such as, for given RF power, this performance level of air amplifier
Under cooling be not enough to keep temperature constant).At t5, actuator change into 80% time operation with
Just provide higher cooling for window, cause the gradient of the temperature on window to decline.At t6, temperature reaches
To low temperature tl, close air amplifier.
Noting, the embodiment shown in Figure 10 B is exemplary.Other embodiment can
Utilize different power levels, or start air amplifier at different temperatures.Therefore, figure
Embodiment shown in 10B is not construed as exclusiveness or restrictive, and should
It is interpreted exemplary or illustrative.
Figure 11 is that the simplification of the computer system for implementing embodiment as herein described is shown
It is intended to.It should be known that method available digital processing system described herein is (as common leads to
By computer system) perform.Alternatively, can use to be designed or programmed and only carry out a kind of merit
The special-purpose computer of energy.Computer system includes CPU (CPU) 804, CPU
804 are connected to random access storage device (RAM) 828, read only memory by bus 810
(ROM) 812 and mass memory unit 814.System control program 808 resides in random access
In memorizer (RAM) 828, but can also reside in mass memory 814.
Mass memory unit 814 represents persistent data storage device, such as floppy disk
Or fixed disk drive, it can be local or long-range.Network interface 830 provides
Connection via network 832, it is allowed to miscellaneous equipment communication.It should be known that CPU804 can
It is embedded in general processor, application specific processor or dedicated programmed logical device.Input/output
(I/O) interface provides the communication with different peripheral and by bus 810 and CPU804, RAM
828, ROM812 and mass memory unit 814 connect.Exemplary peripheral hardware includes display
818, keyboard 822, cursor control 824, removable media device 834, etc..
Display 818 is configured to show user interface described herein.Keyboard 822,
Cursor control 824, removable media device 834 and other peripheral hardware are connected to I/O interface
820 to send the information in command selection to CPU804.It should be known that and be to and from outside
The data of equipment can be transmitted by I/O interface 820.Described embodiment also can be in distribution
Implementing in formula computing environment, in a distributed computing environment, task is by by wired or wireless net
The remote processing devices that network connects performs.
Note, although above-mentioned embodiment reference capacitance coupled plasma (CCP) room is entered
Line description, but described principle is equally applicable to other type of plasma chamber, such as, include electricity
Feel the plasma chamber of coupled plasma (ICP) reactor, include electron cyclotron resonace
(ECR) plasma chamber of reactor, etc..
It should now be understood that, air amplifier can be with various air duct plenum space devices one
Rise and use to control the temperature of dielectric window.Additionally, model data represents, in the side of plenum space
Helping down, even when by being enough to the back pressure stopping fan cooling system, air amplifier remains to
Of a relatively high cooling air speed to dielectric window is enough provided.Therefore, enforcement as herein described
Mode can be used for effectively cooling down bearing and exceedes about 3kW(such as, etches for silicon through hole)
The dielectric window of electromagnetic energy.Additionally, embodiment as herein described can be used for effectively cooling down bearing
Other type of electromagnetic energy is (such as, for etch process, chemical gaseous phase deposition, oxidation erosion
The electromagnetic energy of quarter, metal etch etc.) dielectric window.
Described embodiment can be implemented by various computer system configurations, described department of computer science
Under unified central planning putting includes portable equipment, microprocessor system, based on microprocessor or programmable
Consumption electronic product, microcomputer, mainframe computer, etc..Described embodiment also may be used
Implementing in a distributed computing environment, in a distributed computing environment, task is by by network even
The remote processing devices connect performs.
One or more embodiment also can be made as computer on a computer-readable medium
Readable code.Computer-readable medium is data-storable arbitrary data storage device, its
Can be read by computer system later.The example of computer-readable medium includes hard drive
Device, network attached storage (NAS), read only memory, random access storage device, CD-
ROM, CD-R, CD-RW, tape and other optics and non-optical data storage device.Meter
Calculation machine computer-readable recording medium can include that the computer-readable being distributed in network coupled computer system is tangible
Medium so that computer-readable code is stored in a distributed fashion and performs.
Although describing the operation of described method in a particular order, it is to be understood that, can in operation
Between perform other house-keeping, or adjustable operation makes them in the slightly different time
Carry out, or can be distributed in allow to process relevant various time intervals and carry out processing and operate
System in, as long as the process of overlap-add operation is performed in the way you want.
Although in order to aforementioned embodiments has been carried out to a certain degree by clearness of understanding
Describe in detail, change and amendment it is apparent that some can be carried out within the scope of the appended claims.
Therefore, embodiments of the present invention should be considered to be illustrative and not restrictive, and described
Embodiment is not limited to details provided herein, but can be in scope of the following claims
Modify with in doctrine of equivalents.
Claims (20)
1. a semiconductor-fabricating device, it includes
Being coupled to the air amplifier of pressurization gas, described air amplifier produces on startup
Raw air stream；
Being coupled to the plenum space of described air amplifier, wherein said plenum space receives
Described air stream also makes described airflow distribution on the window of plasma chamber；
It is coupled to the heater of described air amplifier, wherein when at described plasma chamber
In processing procedure in heat described air stream when starting described heater；
It is positioned at the temperature sensor of the surrounding of the described window of described plasma chamber；And
Limit and start the amplification of described air based on the temperature recorded by described temperature sensor
Device and the controller of the described heater of startup.
Semiconductor-fabricating device the most according to claim 1, wherein said plenum space includes
Multiple piecemeals, wherein said multiple piecemeals are coupled to described air amplifier and described heating
Device.
Semiconductor-fabricating device the most according to claim 1, wherein said controller is defined
Reading the instruction of formula in computer-readable medium, described instruction limits and is used for starting
Described air amplifier and the parameter of described heater.
Semiconductor-fabricating device the most according to claim 1, it also includes:
It is coupled to described air amplifier and is coupled to the actuator of described controller, wherein
Described controller is defined to described actuator is set to from multiple values selected performance
It is worth to regulate the intensity of described air stream.
Semiconductor-fabricating device the most according to claim 1, it also includes:
Interior loop on the described window of described plasma chamber；With
Exterior loop on the described window of described plasma chamber.
Semiconductor-fabricating device the most according to claim 5, wherein said plenum space is ring
Shape and be arranged between described interior loop and described exterior loop.
Semiconductor-fabricating device the most according to claim 1, it also includes:
First coil；
Second coil；
Tertiary coil, wherein said first coil, described second coil and described 3rd line
Circle is concentric, and wherein said plenum space is annular and is arranged on described first
Between coil and described second coil；With
It is arranged on the outer plenum space between described second coil and described tertiary coil.
Semiconductor-fabricating device the most according to claim 1, it also includes:
Conduit between described air amplifier and described plenum space.
Semiconductor-fabricating device the most according to claim 1, it also includes:
It is coupled to described heater and is coupled to the heater regulator of described controller.
10., for the method processing semiconductor equipment, described method includes:
Start for the first time and limit the air amplifier producing air stream；
Start for the first time and be coupled to the heater of described air amplifier to heat described sky
Air-flow, wherein said air stream is distributed on the window of plasma chamber；
Described air amplifier and institute is disabled when the temperature of described window reaches the first predetermined value
State heater；
When described temperature reaches the second predetermined value second time start described air amplifier but
Do not start described heater to cool down described window；And
Described air amplifier, Qi Zhongsuo is disabled when described temperature is less than three predetermined values
The operation stating method is performed by processor.
11. methods according to claim 10, it also includes:
Receiving the formula with the instruction for processing substrate, wherein said formula includes institute
State first, second, and third predetermined value.
12. methods according to claim 10, wherein start described air amplifier for the first time
Also include:
Drive the actuator enabling pressurized air through described air amplifier, Qi Zhong
Described actuator disables described air amplifier when being deactivated.
13. methods according to claim 12, wherein drive described actuator also to include:
Setting the performance number for described actuator, wherein said performance number determines described sky
The intensity of air-flow.
14. methods according to claim 10, wherein when being performed by one or more processor
Time, the operation of described method is performed by computer program, and described computer program is stored in
In the computer-readable recording medium of non-transitory.
15. 1 kinds of semiconductor-fabricating devices, comprising:
Being coupled to multiple air amplifiers of pressurization gas, each air amplifier is starting
Time produce air stream；
Including the plenum space of multiple piecemeals, each piecemeal is coupled to respective air and amplifies
Device, wherein each piecemeal receives described air stream and each from described respective air amplifier
Individual piecemeal by described airflow distribution on the window of plasma chamber；
Multiple heaters, each heater is coupled to described respective air amplifier, its
In when each heater processing procedure in described plasma chamber is activated, institute
State air stream to be heated；
It is positioned at one or more temperature sensing of the surrounding of the described window of described plasma chamber
Device；And
Limit based on one or more temperature recorded by one or more temperature sensor described
Start each air amplifier and start the controller of each heater.
16. semiconductor-fabricating devices according to claim 15, it also includes:
Interior loop on the described window of described plasma chamber；With
Exterior loop on the described window of described plasma chamber, wherein said plenum space is
Annular and be arranged between described interior loop and described exterior loop.
17. semiconductor-fabricating devices according to claim 15, it also includes:
First coil；
Second coil；With
Tertiary coil, wherein said first coil, described second coil and described 3rd line
Circle is concentric, and wherein said plenum space is annular and is arranged on described first
Between coil and described second coil.
18. semiconductor-fabricating devices according to claim 17, it also includes:
Being arranged between described second coil and described tertiary coil including multiple outer piecemeals
Outer plenum space.
19. semiconductor-fabricating devices according to claim 18, it also includes:
It is arranged on the external inflation space outside described tertiary coil.
20. semiconductor-fabricating devices according to claim 15, it also includes:
Multiple conduits, each conduit makes described respective air amplifier and described inflation sky
Between respective piecemeal coupling.
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| US13/851,793 US9530656B2 (en) | 2011-10-07 | 2013-03-27 | Temperature control in RF chamber with heater and air amplifier |
| US13/851,793 | 2013-03-27 |
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| US9412671B1 (en) * | 2015-04-30 | 2016-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for controlling processing temperature in semiconductor fabrication |
| CN108695148B (en) * | 2017-04-12 | 2021-07-09 | 北京北方华创微电子装备有限公司 | Temperature control device of dielectric window and reaction chamber applying same |
| US11538666B2 (en) * | 2017-11-15 | 2022-12-27 | Lam Research Corporation | Multi-zone cooling of plasma heated window |
| WO2019140200A1 (en) * | 2018-01-15 | 2019-07-18 | Applied Materials, Inc. | Advanced temperature monitoring system and methods for semiconductor manufacture productivity |
| CN110519905B (en) * | 2018-05-21 | 2022-07-22 | 北京北方华创微电子装备有限公司 | Temperature control device and plasma equipment |
| US11424107B2 (en) | 2018-06-29 | 2022-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Temperature-controlled plasma generation system |
| US11929237B2 (en) * | 2018-08-28 | 2024-03-12 | Fuji Corporation | Plasma generation device and plasma head cooling method |
| KR20230004631A (en) * | 2020-04-20 | 2023-01-06 | 램 리써치 코포레이션 | Enhanced closed loop gas-based heat exchange |
| CN113838767B (en) * | 2020-06-08 | 2023-12-12 | 长鑫存储技术有限公司 | Developing device and developing method |
| CN115172156B (en) * | 2022-09-07 | 2022-12-02 | 江苏邑文微电子科技有限公司 | Semiconductor etching machine suitable for TSV process and control method thereof |
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| CN104078301A (en) | 2014-10-01 |
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