CN104078301A - Temperature control in rf chamber with heater and air amplifier - Google Patents
Temperature control in rf chamber with heater and air amplifier Download PDFInfo
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- CN104078301A CN104078301A CN201410119441.3A CN201410119441A CN104078301A CN 104078301 A CN104078301 A CN 104078301A CN 201410119441 A CN201410119441 A CN 201410119441A CN 104078301 A CN104078301 A CN 104078301A
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- air
- air amplifier
- window
- plenum space
- heater
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Abstract
Systems, methods, and computer programs are presented for controlling the temperature of a window in a semiconductor manufacturing chamber. One apparatus includes an air amplifier, a plenum, a heater, a temperature sensor, and a controller. The air amplifier is coupled to pressurized gas and generates, when activated, a flow of air. The air amplifier is also coupled to the plenum and the heater. The plenum receives the flow of air and distributes the flow of air over a window of the plasma chamber. When the heater is activated, the flow of air is heated during processing, and when the heater is not activated, the flow of air cools the window. The temperature sensor is situated about the window of the plasma chamber, and the controller is defined to activate both the air amplifier and the heater based on a temperature measured by the temperature sensor.
Description
Technical field
The present invention relates to system, the method and computer program of the temperature for controlling semiconductor manufacturing facility.
Background technology
Apparatus for processing plasma can be used to material to fall from the substrate etch of being made up of for example semiconductor or glass.Apparatus for processing plasma can comprise the vacuum chamber that surrounds plasma processing gas, and described gas can be ionized and be transformed into plasma.For example, driving source (radio frequency (RF), microwave or other source) can be applied to energy process gas to produce plasma.In some apparatus for processing plasma, energy can be by the dielectric window transmission forming through vacuum chamber.Therefore, dielectric window can meet with the heating being caused by electromagnetic energy.In addition, this heating can be confined to due to the variation of the electromagnetic energy causing because of process conditions the specific region of dielectric window.Dielectric window can have two heating sources.First, the dielectric property of window (tangent-δ) can cause the direct absorption of radio frequency (RF) or microwave power.Secondly, the plasma being produced by driving source can this window of indirect.In addition,, due to the design of source (antenna configuration etc.) and condition of plasma, heating can be uniformly distributed or be confined at whole dielectric window the specific region of this window.
Can remove heat energy (, without cooling device) or remove heat energy with cooling device (such as liquid-cooling system or fan cooling system) from dielectric window is passive.Liquid-cooling system can be efficiently but more cooling or fan cooling system is more expensive than passive.In addition liquid-cooling system more difficult enforcement in the environment that has electromagnetic energy.For example, liquid cools can cause Local cooling, causes thermal gradient and thermal cracking.The dielectric property of liquid is different from pottery around, and it causes the inhomogeneous transmission of RF power.For example, liquid can conduct, and this can cause the loss of the RF power in liquid.Liquid can nucleation also can be difficult to be included in cooling system.
Fan cooling system can be used to cooling dielectric window, such as, for example, by the cooling dielectric window of convection current.But fan cooling system can be inefficent and be difficult to be applied to the relatively high regional area of heat load being caused by the driving source in dielectric window.Specifically, it is inefficent being suitable for the heat radiation when having high back pressure of the fan cooling system that uses together with apparatus for processing plasma.
Therefore, there is the demand of the alternate device to the cooling dielectric window for apparatus for processing plasma.Under this background, embodiments of the present invention are proposed.
Summary of the invention
System, the method and computer program of the temperature of the window of chamber are proposed to manufacture for managing semiconductor.Should be appreciated that embodiments of the present invention can implement by many modes, these modes are such as the computer program on method, device, system, equipment or computer-readable medium.Some execution modes are described below.
In one embodiment, a kind of device comprises air amplifier, plenum space, heater, temperature sensor and controller.Air amplifier is coupled to pressurization gas (for example compressed air) and in the time starting, produces air stream.Air amplifier is also coupled to plenum space and heater.Plenum space receives described air stream and makes described airflow distribution on the window of plasma chamber.In the time that heater is activated, described air stream is heated in processing procedure.Temperature sensor is positioned at around the window of plasma chamber, and controller is defined temperature actuated air amplifier and/or heater based on being recorded by temperature sensor.
In another embodiment, provide the method for the treatment of semiconductor equipment.The method comprises the operation that limits the air amplifier that produces air stream for starting for the first time, and for starting for the first time the heater that is coupled to air amplifier to heat the operation of described air stream.Air stream is distributed on the window of plasma chamber.In addition, the method comprises another operation for stop using in the time that the temperature of window reaches the first predetermined value air amplifier and heater.The method comprises for start for the second time air amplifier in the time that temperature reaches the second predetermined value but does not start heater another operation with cooling described window.Then, start air amplifier during lower than the 3rd predetermined value in temperature.In one embodiment, the operation of described method is carried out by processor.
In another execution mode, semiconductor-fabricating device comprises multiple air amplifiers, plenum space, multiple heater, one or more temperature sensor and controller.Multiple air amplifiers are coupled to pressurization gas, and each air amplifier produces air stream in the time starting.Plenum space comprises multiple piecemeals (section), and each piecemeal is coupled to air amplifier separately, wherein each piecemeal from described air amplifier admission of air separately stream and each piecemeal by described airflow distribution on the window of plasma chamber.Each heater is coupled to air amplifier separately, heated when air stream is activated in the processing procedure in plasma chamber at each heater.One or more temperature sensor is arranged on around the window of plasma chamber, and one or more temperature that controller is defined based on being recorded by described one or more temperature sensor starts each air amplifier and starts each heater.
By the detailed description of carrying out below in conjunction with accompanying drawing, other side can become apparent.
Brief description of the drawings
Can understand best execution mode by reference to the explanation of carrying out below in conjunction with accompanying drawing.
Fig. 1 has schematically described according to shown in this paper and the apparatus for processing plasma of described one or more execution mode.
Fig. 2 has schematically described according to shown in this paper and the plenum space of described one or more execution mode.
Fig. 3 has schematically described according to shown in this paper and the plenum space segmentation (segment) of described one or more execution mode.
Fig. 4 A shows being coupled with the heating element of heated air flow with air amplifier according to an execution mode.
Fig. 4 B show according to an execution mode at air amplifier and be attached to the heating element of series coupled between the conduit of plenum space.
Fig. 5 show according to an execution mode at the air stream source of supply not having directly over the dielectric window of plenum space.
Fig. 6 shows the chamber with multiple plenum spaces according to an execution mode.
Fig. 7 A-7D shows some execution modes of the difference configuration of the window that utilizes pressure-air cooling chamber.
Fig. 8 be according to an execution mode for manage the flow chart of the method for the temperature of window in processing procedure.
Fig. 9 is according to the flow chart of the method for the temperature of the window for caretaker room of an execution mode.
Figure 10 A is the chart that the result of testing by the difference of the cooling described window of air is shown according to an execution mode.
Figure 10 B shows the temperature controlled execution mode along with passage of time of dielectric window.
Figure 11 is the rough schematic view of the computer system for implementing execution mode as herein described.
Embodiment
Ensuing execution mode has been recorded the method and apparatus of the temperature for controlling semiconductor-fabricating device, more specifically, has recorded the method and apparatus of the temperature for controlling RF chamber dielectric window.
Obviously, embodiments of the present invention can be implemented in the case of there is no some or all of these details.On the other hand, known technological operation can not be described in detail in order to avoid fuzzy embodiments of the present invention unnecessarily.
Fig. 1 has schematically described according to shown in this paper and the apparatus for processing plasma of described one or more execution mode.Apparatus for processing plasma generally includes vacuum chamber, seals the dielectric window of the opening of this vacuum chamber, energy source, at least one air amplifier and at least one heating element.To the various execution modes of operation of apparatus for processing plasma and apparatus for processing plasma be described in more detail at this.
Apparatus for processing plasma 100 comprises the vacuum chamber 20 for surround plasma processing gas and plasma in the processing procedure of substrate 24.Vacuum chamber 20 can be made up of the metal material that can be set to reference potential.Substrate 24 can be placed in vacuum chamber 20 to process.Vacuum chamber 20 can surround plasma processing gas, and described plasma processing gas can comprise halogen or halogen, such as, for example fluorine (F), chlorine (Cl), bromine (Br), iodine (I) and astatine (At).In addition, concrete process gas can comprise CClF
3, C
4f
8, C
4f
6, CHF
3, CH
2f
3, CF
4, HBr, CH
3f, C
2f
4, N
2, O
2, Ar, Xe, He, H
2, NH
3, SF
6, BCl
3, Cl
2, and can ionizable other gas.
Apparatus for processing plasma 100 comprises dielectric window 10, and electromagnetic energy transmissive is by dielectric window 10.Dielectric window 10 comprises the plasma exposed surfaces and the air exposure surface 14 that are configured to the inside that is exposed to vacuum chamber 20.Dielectric window 10 is made up of the dielectric material of transmission electromagnetic energy (such as having the electromagnetic energy of frequency range of 100kHz to 100MHz).Suitable dielectric material comprises quartz and pottery, and pottery comprises for example aluminium nitride (AlN), aluminium oxide (Al
2o
3) or there is any other refractory material of similar transmission property.
Energy source 30 produces and is enough to make the Ionized electromagnetic energy of plasma processing gas.Energy source 30 can comprise interior loop 32 and exterior loop 34.Note, energy source 30 can comprise makes the coil that is suitable for any shape that produces electromagnetic energy, such as, for example angled rotating and the facet concentric segmented (segment), scroll conductor, toroid cast conductor or their combination that form toward each other.
Energy source 30 can produce electromagnetic energy in vast power bracket, such as, for example power bracket is extremely approximately 20kW of about 50W in some embodiments, is greater than in one embodiment about 2kW, about 3kW in another embodiment, or in another execution mode about 4.5kW.In some embodiments, interior loop 32 and exterior loop 34 are coupled each other in an electrically conductively.In other embodiments, can be by multiple RF generators to multiple coil power supplies.Note, although energy source 30 is depicted as the RF source of multi-coil, but thereby energy source can be can produce electromagnetic energy to produce any equipment of inductively coupled plasma, be such as but not limited to radio frequency (RF) source, electron cyclotron resonace (ECR), microwave loudspeaker, slot antenna or use the helical source of the helical antenna of the cylindrical window of wrapping.Apparatus for processing plasma 100 optionally comprises the plenum space 40 for guide air stream on dielectric window 10.
In a kind of execution mode of apparatus for processing plasma 100, vacuum chamber 20 can be coupled to dielectric window 10.For example, the opening of vacuum chamber 20 can be sealed at least in part by dielectric window 10.Specifically, the plasma exposed surfaces of dielectric window 10 can be exposed to plasma and/or plasma processing gas in the operating process of apparatus for processing plasma 100.Note, although dielectric window 10 is depicted as the top that is connected to vacuum chamber 20 in Fig. 1, any part that is suitable for receiving electromagnetic energy of the salable vacuum chamber 20 of dielectric window 10.
In some embodiments, apparatus for processing plasma 100 can comprise the part for heating dielectric window 10 and reduce the heater 26 of the stress in dielectric window 10.Other execution modes do not comprise heater 26 in apparatus for processing plasma 100.In addition, other execution modes can comprise that the heating element that is coupled to air amplifier is with heating dielectric window 10, below with reference to Fig. 4-6 in greater detail.
Energy source 30 can be arranged on outside the contiguous dielectric window 10 of vacuum chamber 20.Plenum space 40 can be set to contiguous energy source 30 and dielectric window 10 makes plenum space 40 be communicated with air exposure surface 14 fluids of dielectric window 10.In one embodiment, plenum space 40 is between interior loop 32 and exterior loop 34.
In operating process, energy source 30 transmits electromagnetic energy through dielectric window 10 and enters vacuum chamber 20 so that the plasma processing gas of at least a portion is transformed into plasma.The electromagnetic energy of a part is transformed into the heat energy that can be absorbed by dielectric window 10.Specifically, some electromagnetic energy can according to the dielectric property of dielectric window 10 change into heat and wherein a part of electromagnetic energy can after chamber is by plasma processing gas ionization, be absorbed (for example, dielectric window 10 can by plasma exposed surfaces by plasma heating) by dielectric window 10.Therefore, the temperature of dielectric window 10 can raise because of electromagnetic energy.In some embodiments, electromagnetic energy is the anisotropic electromagnetic energy that makes the different piece of dielectric window 10 bear varying number.Believe that the heat of responding in dielectric window 10 can be associated with the amount of the electromagnetic energy that is conveyed through dielectric window 10.For example, in the execution mode of recording herein, be greater than approximately 40% electromagnetic energy and can be used as heat and absorbed by dielectric window 10.Dielectric window can absorb the electromagnetic energy at least about 0.4kW as heat, such as, be for example greater than in one embodiment 1kW, be about 1.5kW in another embodiment, or in another execution mode, be about 2.25kW.Therefore,, with respect to the other parts of dielectric window 10, in the hot part of the relative comparatively high amts being caused by electromagnetic energy bearing of dielectric window 10, can form the temperature province (focus) of rising.
Apparatus for processing plasma 100 comprises for air at least one air amplifier 60 to plenum space 40 is provided.Air amplifier 60 is coupled to plenum space 40 by one or more conduit 50.Note, although Fig. 1 has described 60 and 4 conduits 50 of 4 air amplifiers, apparatus for processing plasma 100 can have the air amplifier 60 and the conduit 50 that are enough to dielectric window 10 to provide fully cooling any amount.Some execution modes described below are included in the plenum space of the varying number of the diverse location on dielectric window 10.In addition, some execution modes can provide air stream in the situation that not using plenum space on dielectric window.
Be supplied to the air of plenum space 40 can be by passive purge (purge).For example, plenum space 40 can be enclosed in pressure control room 22.Pressure control room 22 can be maintained under the pressure lower than atmospheric pressure, and the outlet 44 of plenum space 40 can directly enter pressure control room 22 by purging air.The air purging can remove from pressure control room 22 by gas extraction system (not shown in Fig. 1).In another embodiment, pressure control room 22 can be maintained under the pressure higher than atmospheric pressure, and the outlet 44 of plenum space 40 can directly enter pressure control room 22 by purging air.The air purging can remove from pressure control room 22 by ventilating opening (not shown in Fig. 1).In further execution mode, plenum space can be communicated with the outside to apparatus for processing plasma 100 by air passive purge with blast pipe (not shown in Fig. 1) fluid.
Additionally or alternatively, can be from initiatively purging airs of plenum space 40.For example, one or more air amplifier 60 can be communicated with and be configured to plenum space 40 fluids and removes air from plenum space 40.Accordingly, although Fig. 1 has described to only have the conduit 50 in the device of input, conduit 50 can be configured to provide from the air of plenum space 40 and/or from plenum space 40 and remove air.In addition,, although Fig. 1 air amplifier 60 is provided provide air to plenum space 40, the entrance 62 of air amplifier 60 can be communicated with to remove air from plenum space 40 with the outlet of plenum space 40 44.
Inject air stream with at least one air amplifier 60 and can produce a large amount of back pressure, this can suppress the air stream towards dielectric window 10.According to some execution modes, plenum space 40 is pressurized to conventionally at least about 1 inches of water(in H2O) (in-H
2o) back pressure, such as, for example in one embodiment, be greater than about 2in-H
2the back pressure of O.In addition, note, the operation of air amplifier 60 does not need back pressure.
Fig. 2 has schematically described according to shown in this paper and the plenum space of described one or more execution mode.Plenum space 40 is formed as partial closure's body and comprises one or more entrance 42 and one or more outlet 44.Accordingly, air can by the entrance of plenum space 40 42 receive and by introducing to have back pressure at least partly by plenum space 40 around pressure region in.Plenum space 40 can be divided into multiple segmentations 46 by partition wall 48, herein also referred to as branch, makes each segmentation comprise at least one entrance 42 and at least one outlet 44.
Noting, is annular although plenum space 40 is depicted as substantially, and plenum space 40 can be made into be suitable for providing any shape in the region of air to dielectric window 10.In one embodiment, plenum space 40 is made up of passive material (passive material), such as, for example polytetrafluoroethylene (PTFE or " teflon "), polyether-ether-ketone (PEEK), Polyetherimide (PEI or " ultem "), pottery or any other electromagnetic energy transmission material, and other material is also feasible.
Fig. 3 has schematically described according to shown in this paper and the plenum space part of described one or more execution mode.Plenum space 40 can be formed single-piece or be formed as multiple segmentations that can merge each other.Particularly, as depicted in figure 3, inflation segmentation 140 can comprise the multiple outlets 144 that are formed in inflation segmentation 140.Inflation segmentation 140 can be substantially wedge shape and be constructed to combine to seal columnar region substantially or the region of annular substantially with other inflation segmentation 140.Note, plenum space as herein described can be set to be suitable for coordinating with energy source 30 and provide compress any shape of cool stream to dielectric window 10 or its desired region.
Fig. 4 A shows the heating element of air stream that is coupled to air amplifier and offers with heating dielectric window according to an execution mode.As previously discussed in reference to Figure 1, apparatus for processing plasma 100 comprises for air at least one air amplifier 60 to plenum space 40 or the direct window 10 to chamber is provided.Each air amplifier 60 comprises entrance for receiving input air 72, for the exhaust outlet 64 of delivery air 70 with for for example receiving pressurized air 68(, clean dry air, compressed air) control inputs 66.Be not bound by any concrete theory, believe, compared to according to the pressurized air 68 of bernoulli principle and Coanda effect, the pressurized air 68 that injects control inputs 66 provides the air 70 of relatively large quantity.For example, in the time that heater 74 is not activated (, cutting out), the stream of air 70 is used as cooling-air, and for example, in the time that heater 74 is activated (, opening), the stream of air 70 is used as hot-air to heat cooling window.In one embodiment, plenum space 40 be annular and between interior loop 32 and exterior loop 34.Note, although only show an air amplifier 60 in Fig. 4 A, other air amplifier can be coupled to each conduit 50 that is coupled to plenum space 40.
In one embodiment, heating element 74 started (for example, opening) to make window be elevated to predetermined temperature before starting substrate processing.Once window arrives predetermined temperature, heating element 74 is deactivated (for example, turning off) and RF powers on to start plasma treatment in chamber.In one embodiment, in substrate process operations process, the temperature of window is by temperature sensor monitors, and in the time that temperature reaches the second predetermined temperature, air amplifier 60 is activated (not starting heating element 74) to provide cooling-air 70 to TCP window 10.
After window is cooled to the 3rd predetermined temperature, air amplifier 60 is deactivated.This mode, is maintained in temperature range the temperature of window 10, has avoided caused breakage on window 10 or the thermal stress of fault.Give design engineer by the better control to chamber technique by the ability of the air stream control temperature that offers window.For example, the target in treatment step is to keep window lower than 120 DEG C.But, having by the more effectively ability of cooling window of described execution mode, chamber technique just can be at lower temperature operation, and this lower temperature is such as in 60 DEG C, 80 DEG C, scope between 50 DEG C to 100 DEG C, etc.
Pressurized air 68(for example, compressed air) can enter air amplifier 60 with the relatively high speed of air compared to air amplifier 60 outsides.Compressed air 68 can be directed toward the exhaust outlet 64 of air amplifier 60.According to Coanda effect, pressurized air 68 can be advanced along the annular boundary of air amplifier 60 substantially.
Air amplifier 60 can be by the air 70 that suitable quantity is provided at least about the speed of 20cfm, such as, for example speed extremely about 3000cfm of about 20cfm in one embodiment, about 25cfm is to about 900cfm in another embodiment, in another execution mode about 30cfm to about 230cfm or in further execution mode about 125cfm to about 230cfm.
In one embodiment, at least one air amplifier 60 is communicated with plenum space 40 fluids by one or more conduit 50.One or more conduit 50 can be made up of passive material, such as, for example teflon, PEEK, ultem, pottery or any other electromagnetic energy transmission material.In some embodiments, use non-transmissive material.For example, if produce plasma with microwave source, conduit goods can be made of metal.
Each conduit 50 can comprise the amplifier aperture being communicated with the exhaust outlet fluid of air amplifier 60 and the plenum space aperture being communicated with the inlet fluid of plenum space 40.Accordingly, air amplifier 60 can be supplied cooling-air or be added hot-air to dielectric window 10 by conduit 50 and plenum space 40.
Fig. 4 B show according to an execution mode at air amplifier and be attached to the heating element of series coupled between the conduit of plenum space.Heating element can be before or after air amplifier 60 series coupled.Fig. 4 A shows heating element and is positioned at air amplifier 60 execution mode above, and input air 72 first passed through heating element before entering air amplifier 60.
In the execution mode of Fig. 4 B, heating element 74 is coupled in series between air amplifier 60 and conduit 50.In this case, input air 72 enters air amplifier, then, is first being heated before conduit 50 processes from air amplifier delivery air out.
In addition, plenum space 40 can directly contact with window 10, as shown in Figure 4 A.In other embodiments, plenum space can be spaced apart to allow the air stream below plenum space to scatter on window 10 with window 10.Offset distance between plenum space 40 and window 10 can be the distance that is suitable for the effective cooling that promotes dielectric window 10, such as, be for example greater than in one embodiment about 0.25mm, or be about 2mm in another embodiment.Fig. 4 B shows plenum space and the isolated execution mode of window, but other execution mode can have the plenum space 40 contacting with window 10.
Fig. 5 show according to an execution mode at the air stream source of supply not having directly over the dielectric window of plenum space.In one embodiment, air is guided through conduit and is fed on dielectric window 10 in the situation that there is no plenum space 40.For example, air stream leaves conduit 50 and towards window 10, causes exiting the air contact hole 10 of this conduit in the bottom of conduit 50.
In some embodiments, can have from conduit and directly be supplied to the air of window and be supplied to the mixture of the air of window via plenum space.Provide an embodiment below with reference to Fig. 7 D.
Note, the execution mode shown in Fig. 4 A, 4B and 5 is exemplary.Other execution mode can utilize different conduits and plenum space, or other position on window arranges plenum space, etc.Therefore, the execution mode shown in Fig. 4 A, 4B and 5 should not be interpreted as exclusiveness or restrictive, and should be interpreted as exemplary or illustrative.
Fig. 6 shows the chamber with multiple plenum spaces according to an execution mode.In one embodiment, substrate diameter is 300mm, but same principle is applicable to the wafer of any size, such as the wafer of 450mm.Fig. 6 shows the chamber of have two coils (interior loop 32 and exterior loop 34) and two plenum spaces (interior plenum space 40 and outer plenum space 86).Note, in Fig. 6, conduit 50 is positioned at air amplifier 60 below and is omitted in order to avoid the details of fuzzy chamber.
Chamber 100 comprise be coupled to matching network 110 the RF generator 108 of RF power to TCP chamber be provided.In addition, this chamber comprise be coupled to matching network 124 the two RF generator 122 of RF power to the bottom electrode in chamber be provided.
System controller 104 comprises the operation of computer program with caretaker room.Computer program receives plasma recipes and 106(is set for example, in computer-readable medium), plasma recipes arranges 106 and is identified for carrying out each step to process the setting of substrate in chamber.System controller 104 is coupled to the different elements of chamber and can controls different elements and how to operate, and for example open or close RF power, startup or inactive air amplifier or heater, in chamber, introduce plasma gas, etc.Some connectors from system controller 104 are shown in Fig. 6, and have been omitted in order to avoid the details of ambiguity diagram 6 from other connector of system controller 104.
In one embodiment, adjuster 82 is between compressed air source and air amplifier or heater.System controller be exercisable with controlled adjuster 82 to control feeding to the compressed-air actuated quantity of air amplifier.In one embodiment, adjuster 82 has two states: Kai Heguan.Opening state, adjuster 82 makes pressurized air 80 enter air amplifier or heater, and any resistance to air stream is not provided.In off status, do not have air stream to offer air amplifier or heater.In other embodiments, adjuster 82 can have various states, and every kind of state provides the pressurized air 82 of varying number to air amplifier 60.In such a way, system controller 104 can be provided the air of varying number and be controlled better the temperature on dielectric window by the temperature based on dielectric window.For example, in the time that dielectric window has reached very high temperature, system controller can start adjuster 82 so that air as much as possible to be provided, and in the time of lower temperature, system controller can start adjuster 82 so that the air of lesser amt to be provided.
One or more temperature sensor 84 provides hot reading to system controller to carry out the temperature treatment program of wishing.In one embodiment, each adjuster can be with respect to other adjuster independent startup in chamber, thereby provides better tuning to the temperature in the zones of different of window for system controller.For example, if the central area of window becomes the heat than hope, and the perimeter of window operates at the temperature of hope, system controller 104 can start the adjuster of the control air amplifier of interior plenum space 40 tops, and does not start the air amplifier that is coupled to outer plenum space 86.Similarly, if only the piecemeal of fenestrate central area becomes the heat than hope, system controller 104 can start the air amplifier that is coupled to single piecemeal, and does not start the adjuster of all air amplifiers for being coupled to plenum space.
Fig. 7 A-7D shows some execution modes of the difference configuration of the window that utilizes pressure-air cooling chamber.Fig. 7 A is the vertical view of the plasma process system for etching operation according to an embodiment of the present invention.As previously mentioned, the TCP coil illustrating comprises interior loop (IC) 32 and exterior loop (OC) 120.Fig. 7 A shows and each circular winding being associated in interior loop and the exterior loop of the TCP coil using in chamber 102 according to an embodiment of the present invention, and for the relative position of the element of cooling or heating dielectric window.The coil configuration that should be appreciated that other type is also feasible.
Connection between end winding is with respect to being provided for element cooling or heating dielectric window: air amplifier 68, heater 66 and plenum space 40 are illustrated.Feasible is to have to provide the dimension of dome structure coil (dimensional coil), and other coil form structure of on-plane surface coil distribution.According to the structure being associated with the geometry of TCP coil, capable of regulating plenum space and be coupled to position and the shape of conduit of plenum space.
In the execution mode shown in Fig. 7 A, there are 4 air amplifiers: in the side that two are positioned at chamber, on another two chamber opposite sides that are positioned at this.By this way, 4 conduits provide air each piecemeal to plenum space 40.In other embodiments, can change the position of air amplifier, such as thering is an air amplifier in each side of chamber, all air amplifiers are all positioned in the same side of chamber, etc.Accordingly, in one embodiment, the tie point between each conduit and plenum space is adjustable to just adapt to geometry, thereby all conduits can be coupled to the air amplifier that is positioned at outdoor.
Fig. 7 B shows according to the chamber of the 450mm with 3 coils of an execution mode.For ambiguity diagram 7B not, for describing succinct object, some connectors and element are omitted.In one embodiment, shown each conduit is coupled to the air amplifier that cooling-air or warm air can be provided.Cooling and heating arrangement 702 comprises air amplifier, air amplifier adjuster, heater, temperature controller, etc.System controller 104 is coupled to the different elements in chamber to start or stop the hot or cold air stream on dielectric window.
Chamber in Fig. 7 B comprises 3 coils: interior loop, intermediate coil and exterior loop.In addition, chamber comprises interior plenum space and a plenum space.Interior plenum space is between interior loop and intermediate coil, and outer plenum space is between intermediate coil and exterior loop.By two different plenum spaces are set in zones of different, system controller 104 can provide better temperature control on dielectric window.One or more temperature sensor distributes to provide the temperature measurement result of zones of different substantially around dielectric window.In one embodiment, only use a temperature sensor, in other embodiments, each piecemeal of plenum space or segmentation have temperature sensor associated with it separately, but other configuration of temperature sensor is also feasible.
In one embodiment, interior plenum space comprises 4 different piecemeals, and outer plenum space comprises 8 different piecemeals, and in view of its larger diameter, this can control the air stream to outer plenum space better.Each plenum space of other execution mode can use the piecemeal of varying number, such as one, two, three, six, etc.
In the execution mode shown in Fig. 7 B, each piecemeal of plenum space all has the temperature sensor, air amplifier and the heater that are associated.Temperature control program in system controller 104 monitor the measurement result that obtains from different temperatures transducer and start or inactive air amplifier and heater in case by the zone maintenance being separately associated with each piecemeal under desired temperature.But other temperature-controlled process is also feasible, such as open or close at one time air amplifier or open or close all air amplifiers that are associated with one of plenum space simultaneously.
Fig. 7 C shows the vertical view of the chamber with 3 coils and 3 plenum spaces.Be omitted in order to avoid the details of fuzzy this framework to some in the connector of cooling and heating arrangement 702.3 plenum spaces and coil be annular and be arranged alternately towards circumference from Chuan center, process chamber top.
In one embodiment, interior plenum space has 4 piecemeals, and middle plenum space has 6 piecemeals, and outer plenum space has 8 piecemeals, but with regard to each plenum space, the piecemeal of other quantity is also feasible.Use 3 different plenum spaces to realize the temperature controlled fine setting on window.As mentioned above, be coupled to the whole one-shots of temperature reading that the air amplifier of different piecemeals can be based on from obtaining around the temperature sensor of dielectric window setting substantially or start separately.
In another not shown execution mode of Fig. 7 C, the conduit that leads to different plenum spaces can share the air of this one or more air amplifier.For example, in one embodiment, two conduits are shared the stream being produced by an air amplifier, and in other embodiments, can be coupled to identical air amplifier more than the conduits of two.In the situation that two piecemeals are shared an air amplifier, identical conduit can be used to air amplifier to be coupled to two different piecemeals, and this conduit has two and exits outlet (instead of an outlet), outlet of each piecemeal.
Fig. 7 D show there are 2 coils, 2 air amplifiers and directly provide air stream and without the chamber of multiple conduits of plenum space above window.In some embodiments, without plenum space in the situation that, can use at least one air amplifier.Execution mode shown in Fig. 7 D comprises 3 coils and 2 plenum spaces.The first plenum space is between interior loop and intermediate coil, and the second plenum space is positioned at exterior loop outside.In addition, multiple conduits provide air stream Gei Chuan center, between intermediate coil and exterior loop, without using plenum space.
In one embodiment, air feed is vertical orientated with respect to the air exposure surface 14 of dielectric window 10 to the output of the conduit of window.Accordingly, the exhaust outlet 64 of at least one air amplifier 60 can be orientated with respect to dielectric window 10, makes cooling-air 70 along the path flow perpendicular to the air exposure surface 14 of dielectric window 10 substantially.In another not shown execution mode, at least one air amplifier 60 is with respect to the air exposure surface 14 bevel α orientations of dielectric window 10.Accordingly, the exhaust outlet 64 of at least one air amplifier 60 can be orientated with respect to dielectric window 10, makes cooling-air 70 along the path flow of aliging with the air exposure surface 14 bevel α of dielectric window 10.Note, oblique angle α can be temperature arbitrarily angled that is suitable for controlling dielectric window 10.
Note, the execution mode shown in Fig. 7 A-7D is exemplary.Other execution mode can use coil, plenum space, conduit, the piecemeal of varying number, etc.So the execution mode shown in Fig. 7 A-7D should not be interpreted as exclusiveness or restrictive, and should be interpreted as exemplary or illustrative.
Fig. 8 is the flow chart for manage the method for the temperature of window in processing procedure.In operation 802, heater is opened, and then in operation 804, opens air amplifier.As a result, the air that exits air amplifier can become the air having heated.The method proceeds to operation 806 from operating 804, in operation 806, checks to determine whether the temperature t of dielectric window has met the requirements of heating-up temperature t
s.The method repeats the temperature of inspection hatch in operation 806 until temperature t reaches desired heating-up temperature t
s, then, the method proceeds to operation 808, and wherein heater and air amplifier are closed.
The method proceeds to operation 810 from operation 808, in operation 810, starts the processing of substrate in chamber, for example, opens RF power and in chamber, lights plasma.The method proceeds to operation 812 from operation 810, and whether the temperature t that checks to determine dielectric window in 812 in operation is higher than the high threshold t of temperature
h.If temperature t is higher than temperature t
h, the method proceeds to operation 814, otherwise the method proceeds to operation 816.
In operation 814, air amplifier is opened, unless air amplifier is opened.The method proceeds to operation 816 from operation 814, in operation 816, checks to determine that whether temperature t is lower than low threshold temperature t
l.If temperature t is lower than temperature t
l, the method proceeds to operation 818, and if temperature t is not less than temperature t
l, the method proceeds to operation 820.
In operation 818, air amplifier is switched off, unless air amplifier is closed.The method proceeds to operation 820 from operation 818, checks to determine in operation 820 whether the processing of substrate completes.If finished dealing with, the method proceeds to operation 822 to stop the processing of substrate, and if has processed, the method is got back to operation 812 with the inspection of repetition said temperature.
Fig. 9 is according to the flow chart of the method for the temperature of the window for caretaker room of an execution mode.In operation 902, air amplifier is activated, and air amplifier can operate on the dielectric window of plasma manufacture chamber and produce air stream.
The method proceeds to operation 904 from operation 902, and in operation 904, the heater that is coupled to air amplifier is activated.Once heater is activated, for example, to open, the air stream that offers the window on plasma chamber will comprise the air having heated.
The method certainly operation 904 proceeds to operation 906, and in operation 906, the temperature in window reaches the afterwards inactive air amplifier of the first predetermined temperature value and heater.The method proceeds to operation 908 from operation 906, and in operation 908, the temperature in window starts air amplifier after reaching the second predetermined value, but does not start heater, thus cooling window.
The method proceeds to operation 910 from operation 908, and in operation 910, the temperature in window is lower than the air amplifier of stopping using after the 3rd predetermined value.
Figure 10 A is the chart that the result of testing by the difference of the cooling described window of air is shown according to an execution mode.Temperature on the difference place of the radius along window measurement window.Then, by under different power levels and utilize different air amplifier pressure to carry out operating room and carry out some experiments.Test is carried out on the test processes chamber that is similar to the chamber shown in Fig. 1.
Lines 952 show the data in the time using the RF power of 4.5kW and use the air amplifier operating under 30cfm, lines 954 show the data in 4.5kw and 120cfm situation, data when lines 956 show the air amplifier using under 2kW and 30cfm.Result demonstration, the temperature on window is the highest at about 5 inches places of decentre (regions between two RF coils), is wherein provided with plenum space.
According to an execution mode, result demonstration, for example, in the time of the lower operation of the power lower (, 2kW), 30cfm is enough to cooling window.But in the time operating under 4.5kW, 30cfm can not be brought down below approximately 200 DEG C by the temperature at hottest point place in window.It is fully cooling the maximum temperature on window is down to approximately 180 DEG C that the air amplifier of 120cfm provides.
Note, the execution mode shown in Figure 10 is exemplary.Utilize the design parameter of the temperature that is used for testing window to obtain the result about test cabinet.Other execution mode can produce different results, and described result should not be considered to relevant to any performance requirement of described execution mode.So the execution mode shown in Figure 10 should not be interpreted as exclusiveness or restrictive, and should be interpreted as exemplary or illustrative.
Figure 10 B shows the temperature controlled execution mode along with passage of time of dielectric window.At first at t
0, air amplifier (AA) and heater are opened, and RF power is closed, so that the temperature of dielectric window reaches desired temperature t
s.In one embodiment, air amplifier is adjusted to 50% time operation at load, because do not need whole power of air stream to heat window.Certainly, in other embodiments, air amplifier can be in (100%) lower operation at full capacity.
At t
1, temperature reaches t
s, air amplifier and heater are closed, and RF power is opened simultaneously, for the processing in plasma chamber is prepared.In the time that RF power is provided for chamber, temperature is increased to gradually it and reaches t
h.At t
2, air amplifier for example, is being opened to begin to cool down window under (100%) at full capacity.
As the cooling result of air stream, the temperature on window cools down.At t
3, temperature reaches t
l, this is to stop cooling low threshold value.As a result, air amplifier is at t
3be closed.Temperature starts again to rise.In one embodiment, formula need to be used the property regulation temperature in various degree of air amplifier.At t
4, air amplifier for example, is opened to reach maximum temperature t at it under (60%) being less than at full capacity
hbegin to cool down window before.
As cooling result, temperature on window for example keeps substantially constant a period of time, until it starts again to rise (,, for given RF power, cooling under this performance level of air amplifier is not enough to keep temperature constant).At t
5, adjuster is changed into 80% time operation to for window provides stronger cooling, cause the Gradient Descent of the temperature on window.At t
6, temperature reaches low temperature t
l, close air amplifier.
Note, the execution mode shown in Figure 10 B is exemplary.Other execution mode can utilize different power levels, or starts air amplifier under different temperatures.Therefore, the execution mode shown in Figure 10 B should not be interpreted as exclusiveness or restrictive, and should be interpreted as exemplary or illustrative.
Figure 11 is the rough schematic view of the computer system for implementing execution mode as herein described.It should be known that method available digital treatment system described herein (as common general-purpose computing system) execution.Alternatively, can be with being designed or programming and only carry out a kind of special-purpose computer of function.Computer system comprises CPU (CPU) 804, and CPU804 is connected to random access storage device (RAM) 828, read-only memory (ROM) 812 and mass memory unit 814 by bus 810.System control program 808 resides in random access storage device (RAM) 828, but also can reside in mass memory 814.
Mass memory unit 814 represents persistent data memory device, and such as floppy disk or fixed disk drive, it can be this locality or long-range.Network interface 830 provides the connection via network 832, allows to communicate by letter with miscellaneous equipment.It should be known that CPU804 can be embedded in general processor, application specific processor or dedicated programmed logical device.I/O (I/O) interface provides with the communication of different peripheral and by bus 810 and is connected with CPU804, RAM828, ROM812 and mass memory unit 814.Exemplary peripheral hardware comprises display 818, keyboard 822, cursor control 824, removable media device 834, etc.
Display 818 is configured to show user interface described herein.Keyboard 822, cursor control 824, removable media device 834 and other peripheral hardware are connected to I/O interface 820 to send the information in command selection to CPU804.It should be known that the data of being to and from external equipment can transmit by I/O interface 820.Described execution mode also can be implemented in distributed computing environment (DCE), and in distributed computing environment (DCE), task is carried out by the teleprocessing equipment connecting by wired or wireless network.
Note, although above-mentioned execution mode reference capacitance coupled plasma (CCP) chamber is described, but described principle is also applicable to the plasma chamber of other type, for example comprise inductively coupled plasma (ICP) reactor plasma chamber, comprise the plasma chamber of electron cyclotron resonace (ECR) reactor, etc.
Should be appreciated that now that air amplifier can use to control the temperature of dielectric window together with various air duct plenum space devices.In addition, model data represents, under the help of plenum space, even, in the time being subject to being enough to stop the back pressure of fan cooling system, air amplifier still can provide the relatively high cooling-air speed to dielectric window.Therefore, execution mode as herein described can be used for effectively cooling bear exceed about 3kW(such as, for the etching of silicon through hole) the dielectric window of electromagnetic energy.In addition, execution mode as herein described can be used for effectively cooling electromagnetic energy of bearing other type (such as, for the electromagnetic energy of etch process, chemical vapour deposition (CVD), oxide etch, metal etch etc.) dielectric window.
Described execution mode can be implemented by various computer system configurations, and described computer system configurations comprises portable equipment, microprocessor system, based on consumption electronic product microprocessor or programmable, microcomputer, mainframe computer, etc.Described execution mode also can be implemented in distributed computing environment (DCE), and in distributed computing environment (DCE), task is carried out by the teleprocessing equipment connecting by network.
One or more execution mode also can be made as the computer-readable code on computer-readable medium.Computer-readable medium is data-storable arbitrary data memory device, and it later can be by computer system reads.The example of computer-readable medium comprises hard disk drive, network attached storage (NAS), read-only memory, random access storage device, CD-ROM, CD-R, CD-RW, tape and other optics and non-optical data storage device.Computer-readable medium can comprise the computer-readable tangible medium being distributed in network coupled computer system, makes computer-readable code be stored and carry out with distribution mode.
Although describe described method operation with specific order, but be to be understood that, can between operation, carry out other house-keeping, or capable of regulating operation makes them carry out in the slightly different time, or can be distributed in and allow processing in the system operating to processing the relevant various time intervals, as long as the processing of overlap-add operation is performed in the way you want.
Although aforementioned embodiments has been carried out to detailed description to a certain degree for the clear object of understanding, obviously can carry out within the scope of the appended claims some change and amendment.Therefore, embodiments of the present invention should be considered to be illustrative and nonrestrictive, and the described execution mode details that is not limited to herein provide, but can in the scope of claims and doctrine of equivalents, modify.
Claims (20)
1. a semiconductor-fabricating device, it comprises
Be coupled to the air amplifier of pressurization gas, described air amplifier produces air stream in the time starting;
Be coupled to the plenum space of described air amplifier, wherein said plenum space receives described air stream and makes described airflow distribution on the window of plasma chamber;
Be coupled to the heater of described air amplifier, wherein in the time starting described heater in the processing procedure in described plasma chamber, heat described air stream;
Be positioned at the temperature sensor of the surrounding of the described window of described plasma chamber; And
Limit temperature actuated described air amplifier and the controller that starts described heater based on being recorded by described temperature sensor.
2. semiconductor-fabricating device according to claim 1, wherein said plenum space comprises multiple piecemeals, wherein the first piecemeal is coupled to described air amplifier and other piecemeal is coupled to air amplifier and heater separately.
3. semiconductor-fabricating device according to claim 1, wherein said controller is defined to read the instruction of the formula in computer-readable medium, and described instruction is defined for the parameter that starts described air amplifier and described heater.
4. semiconductor-fabricating device according to claim 1, it also comprises:
Be coupled to described air amplifier and be coupled to the adjuster of described controller, wherein said controller is defined described adjuster and is set to performance number selected from multiple values to regulate the intensity of described air stream.
5. semiconductor-fabricating device according to claim 1, it also comprises:
Interior loop on the described window of described plasma chamber; With
Exterior loop on the described window of described plasma chamber.
6. semiconductor-fabricating device according to claim 5, wherein said plenum space be annular and be arranged between described interior loop and described exterior loop.
7. semiconductor-fabricating device according to claim 1, it also comprises:
The first coil;
The second coil;
Tertiary coil, wherein said the first coil, described the second coil and described tertiary coil are concentric, wherein said plenum space be annular and be arranged between described the first coil and described the second coil; With
Be arranged on the outer plenum space between described the second coil and described tertiary coil.
8. semiconductor-fabricating device according to claim 1, it also comprises:
Conduit between described air amplifier and described plenum space.
9. semiconductor-fabricating device according to claim 1, it also comprises:
Be coupled to described heater and be coupled to the heater regulator of described controller.
10. for the treatment of a method for semiconductor equipment, described method comprises:
Start for the first time and limit the air amplifier that produces air stream;
Start for the first time the heater that is coupled to described air amplifier to heat described air stream, wherein said air stream is distributed on the window of plasma chamber;
Inactive described air amplifier and described heater in the time that the temperature of described window reaches the first predetermined value;
In the time that described temperature reaches the second predetermined value, start for the second time described air amplifier but do not start described heater with cooling described window; And
When the described temperature described air amplifier of stopping using during lower than the 3rd predetermined value, the operation of wherein said method is carried out by processor.
11. methods according to claim 10, it also comprises:
Reception has the formula for the treatment of the instruction of substrate, described first, second, and third predetermined value of wherein said formula.
12. methods according to claim 10, wherein start for the first time described air amplifier and also comprise:
Driving makes the pressurized air can be through the adjuster of described air amplifier, the described air amplifier of wherein stopping using in the time that described adjuster is deactivated.
13. methods according to claim 12, wherein drive described adjuster also to comprise:
Set the performance number for described adjuster, wherein said performance number is determined the intensity of described air stream.
14. methods according to claim 10, wherein, in the time being carried out by one or more processor, the operation of described method is carried out by computer program, and described computer program is stored in non-provisional computer-readable recording medium.
15. 1 kinds of semiconductor-fabricating devices, it comprises:
Be coupled to multiple air amplifiers of pressurization gas, each air amplifier produces air stream in the time starting;
Comprise the plenum space of multiple piecemeals, each piecemeal is coupled to air amplifier separately, wherein each piecemeal from described air amplifier separately receive described air stream and each piecemeal by described airflow distribution on the window of plasma chamber;
Multiple heaters, air amplifier separately described in each heater is coupled to, wherein, in the time being activated in the processing procedure of each heater in described plasma chamber, described air stream is heated;
Be positioned at one or more temperature sensor of the surrounding of the described window of described plasma chamber; And
One or more temperature limiting based on being recorded by described one or more temperature sensor starts each air amplifier and starts the controller of each heater.
16. semiconductor-fabricating devices according to claim 15, it also comprises:
Interior loop on the described window of described plasma chamber; With
Exterior loop on the described window of described plasma chamber, wherein said plenum space be annular and be arranged between described interior loop and described exterior loop.
17. semiconductor-fabricating devices according to claim 15, it also comprises:
The first coil;
The second coil; With
Tertiary coil, wherein said the first coil, described the second coil and described tertiary coil are concentric, wherein said plenum space be annular and be arranged between described the first coil and described the second coil.
18. semiconductor-fabricating devices according to claim 17, it also comprises:
Comprise the outer plenum space between described the second coil of being arranged on of multiple outer piecemeals and described tertiary coil.
19. semiconductor-fabricating devices according to claim 18, it also comprises:
Be arranged on the outside plenum space of described tertiary coil outside.
20. semiconductor-fabricating devices according to claim 15, it also comprises:
Multiple conduits, each conduit makes the piecemeal coupling separately of an air amplifier and described plenum space.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/851,793 | 2013-03-27 | ||
| US13/851,793 US9530656B2 (en) | 2011-10-07 | 2013-03-27 | Temperature control in RF chamber with heater and air amplifier |
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| CN104078301A true CN104078301A (en) | 2014-10-01 |
| CN104078301B CN104078301B (en) | 2016-08-24 |
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| Country | Link |
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| KR (1) | KR102251503B1 (en) |
| CN (1) | CN104078301B (en) |
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| CN111357075A (en) * | 2017-11-15 | 2020-06-30 | 朗姆研究公司 | Multi-zone cooling of plasma heated windows |
| CN112655280A (en) * | 2018-08-28 | 2021-04-13 | 株式会社富士 | Plasma generating apparatus and plasma head cooling method |
| WO2021216462A1 (en) * | 2020-04-20 | 2021-10-28 | Lam Research Corporation | Enhanced closed loop gas based heat exchange |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN104078301B (en) | 2016-08-24 |
| TWI623960B (en) | 2018-05-11 |
| KR102251503B1 (en) | 2021-05-13 |
| TW201506984A (en) | 2015-02-16 |
| KR20140118912A (en) | 2014-10-08 |
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