CN104064517A - 晶圆工艺的切割方法 - Google Patents

晶圆工艺的切割方法 Download PDF

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CN104064517A
CN104064517A CN201310578444.9A CN201310578444A CN104064517A CN 104064517 A CN104064517 A CN 104064517A CN 201310578444 A CN201310578444 A CN 201310578444A CN 104064517 A CN104064517 A CN 104064517A
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cutting
silicon wafer
metal level
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蔡鸿文
陈俊廷
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Suretech Technology Co ltd
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Abstract

一种晶圆工艺的切割方法，包括：备有硅晶圆，于硅晶圆正面形成有一金属层，该金属层形成有一凸块层，在该凸块层上贴覆有一晶背研磨贴带，于该硅晶圆背面上进行半切割形成切割道。接着，对该硅晶圆的背面进行研磨至所预定的厚度后仅存部分的切割道，将晶背研磨贴带剥去，将该硅晶圆背面贴覆有切割贴带。最后，以激光在金属层上切割，并贯穿该金属层及该硅晶圆与该切割道相通，即完成芯片切割。藉由此使得制作成本低，而且在工艺过程中不会产生崩塌或裂痕，可以将芯片顶面或底部的碎屑排掉。

Description

晶圆工艺的切割方法
技术领域
本发明涉及一种晶圆（圆片）工艺，尤指一种硅晶圆工艺的晶圆工艺的切割方法。
背景技术
现有大量的集成电路是制作于一硅晶圆10a(如图1A、图1B所示)，再完成集成电路制作之后，或者在该硅晶圆10a上形成凸块之后，需要将该硅晶圆10a切割为多个单一芯片。
传统的硅晶圆工艺中，在硅晶圆10a切割时都是以正面朝上进行切割作业。硅晶圆10a切割非常精密的技术，机台切割主轴转速约在30000至60000rpm之间，由于芯片与芯片的间距很小(约在2mil，1mil=1/1000英寸)，而且芯片又相当脆弱，因此精度要求相当高(3um在205mm的行程)，且必使用钻石刀刃来进行切割，而且其切割方式是采用磨削方式打芯片分开。在采磨削方式将芯片进行切割时，会使硅晶圆10a上产生许多小粉屑，因此在进行切割过程中必须不断地用净水冲洗，以避免污染到芯片。
在硅晶圆10a切割过程中，除了上述的问题外，在整个切割过程中必须注意的事颇多、例如芯片需要完群分割但不能割破承载的贴带(胶带)，切割时必须沿着芯片与芯片之间的切割线进行切割，在切割时不能偏离及蛇行，切割过后不能造成芯片的崩塌或裂痕等是发生。但是，传统在切割过程中先以刀身厚度较厚的钻石刀刃20a切割该硅晶圆10a，形成一第一切割道30a
在图1A中的硅晶圆10a的b1位置易产生崩塌或裂痕，且再利用刀身厚度较薄的钻石刀刃40a伸入于第一切割道30a底部切割，在形成第二切割道50a时，该图1B中的b2、b3位置易产生崩塌或裂痕，而且也易割破承载硅晶圆10a的贴带(胶带)60a。
发明内容
因此本发明的主要目的，在于解决上述传统的缺失，本发明将硅晶圆工艺中的切割方法重新改变，由硅晶圆的背面进行切割后再研磨，在研磨后由硅晶圆的正面进行切割，或者先研磨硅晶圆背面后再进行背面切割，在硅晶圆背面切割后再进行正面切割，将硅晶圆分割成多个颗芯片。藉由此种的硅晶圆切割方法，使得制作成本低，而且在工艺过程中不会产生崩塌或裂痕，且可以将芯片顶面或底部的碎屑排掉。
为达上述的目的，本发明提供一种晶圆工艺的切割方法，包括：
备有一硅晶圆；
于硅晶圆的正面形成有一金属层；
在该金属层形成有一凸块层；
在该凸块层上贴覆有一晶背研磨贴带；
对该硅晶圆背面上切割形成有一第一切割道；
在该第一切割道形成后，以一第二切割刀伸入至该第一切割道的底部中，在该第一切割道的底部上成形有一第二切割道；
对该硅晶圆的背面进行研磨至所预定的厚度，在研磨后该硅晶圆背面仅存有该第二切割道；
将晶背研磨贴带剥去后，将该硅晶圆背面贴覆有切割贴带；
以激光在金属层上切割，并贯穿该金属层及该硅晶圆与该第二切割道相通，即完成芯片切割。
其中，该金属层是以印刷技术形成一指环状。
其中，以凸块技术于该金属层的表面上形成有锡铅凸块的凸块层。
其中，该第二切割道深度为近于该金属层。
为达上述的目的，本发明提供另一种晶圆工艺的切割方法，包括：
备有一硅晶圆；
于硅晶圆的正面形成有一金属层；
在该金属层形成有一凸块层；
将该凸块层上贴覆有一晶背研磨贴带；
对该硅晶圆的背面进行研磨至预定厚度；
在该硅晶圆背面上切割形成有一切割道；
将晶背研磨贴带剥去后，将该硅晶圆背面贴覆有切割贴带；
以激光在金属层上切割，并贯穿该金属层及该硅晶圆与该第二切割道相通，即完成芯片切割。
其中，该金属层是以印刷技术形成一指环状。
其中，以凸块技术于该金属层的表面上形成有锡铅凸块的凸块层。
其中，该切割道深度为近于该金属层。
以下结合附图和具体实施例对本发明进行详细描述，但不作为对本发明的限定。
附图说明
图1A传统的硅晶圆切割示意图；
图1B传统的硅晶圆切割示意图；
图2本发明的硅晶圆制作流程示意图；
图3本发明的硅晶圆金属层与凸块制作结构示意图；
图4本发明的硅晶圆完成晶背研磨贴带示意图；
图5本发明的硅晶圆完成第一切割道示意图；
图6本发明的硅晶圆完成第二切割道示意图；
图7本发明的硅晶圆背面研磨后示意图；
图8本发明的硅晶圆背面贴覆切割贴带示意图；
图9本发明的硅晶圆进行激光切割示意图；
图10本发明的硅晶圆切割成芯片示意图；
图11本发明的另一硅晶圆制作流程示意图；
图12本发明的硅晶圆金属层与凸块制作结构示意图；
图13本发明的硅晶圆完成晶背研磨贴带示意图；
图14本发明的硅晶圆背面研磨后示意图；
图15本发明的硅晶圆背面完成切割道示意图；
图16本发明的硅晶圆背面贴覆切割贴带示意图；
图17本发明的硅晶圆进行激光切割示意图；
图18本发明的硅晶圆切割成芯片示意图。
其中，附图标记
现有技术：
硅晶圆10a
钻石刀刃20a
第一切割道30a
钻石刀刃40a
第二切割道50a
贴带60a
b1、b2、B3位置
本发明：
步骤100～116
步骤200～214
硅晶圆1
第一切割道11
第二切割道12
金属层2
凸块层3
晶背研磨贴带4
第一切割刀5
第二切割刀6
切割贴带7
激光8
切割刀9
切割道91
具体实施方式
兹有关本发明的技术内容及详细说明，现配合图式说明如下：
请参阅图2，本发明的硅晶圆制作流程示意图及图3至图10的制作结构示意图。如图所示：本发明的晶圆工艺的切割方法，首先，如步骤100，备有一硅晶圆(silicon wafer)1(如图3所示)。
步骤102，在该硅晶圆1的正面上印刷有一指环状(Seal-ring)的金属层2。
步骤104，在该金属层2印制后，通过凸块技术于该金属层2的表面上形成有锡铅凸块(Solder Bump)的凸块层3(如图3所示)。
步骤106，在凸块层3制作后，于该凸块层3上贴覆有一晶背研磨贴带(Backside Grinding Tape)4(如图4所示)。
步骤108中，在该凸块层3贴覆该晶背研磨贴带4后，将该硅晶圆1反转后，进行半切割(Half Cutting)工艺，以利用刀身厚度较厚的一第一切割刀(Blade-1)5在该硅晶圆1背面切割形成有一第一切割道11(如图5所示)。
步骤110，在该第一切割道11成形后，再利用刀身厚度较薄的一第二切割刀(Blade-2)6伸入至该第一切割道11的底部中，在该第一切割道11的底部上成形有一深度接近该金属层2的第二切割道12(如图6所示)。
步骤112，利用研磨机(图中未示)对该硅晶圆1的背面进行研磨，依设计所需的厚度进行研磨，在研磨的过程中同时将该硅晶圆1背面上的第一切割道11磨掉后，仅剩下该硅晶圆1背面的第二切割道12。在工艺中该硅晶圆1上已有碎屑(chipping)崩缺、蛇形问题，可藉由研磨将硅晶圆1背面不良面磨除(如图7所示)。
步骤114，在硅晶圆1背面研磨后，将晶背研磨贴带4剥去后，将硅晶圆1背面贴覆有切割贴带7(如图8所示)。
步骤116，进行激光切割，在激光8切割时贯穿该金属层2及该硅晶圆1与该第二切割道12相通，即完成硅晶圆1切割成芯片(如图9、图10所示)。
藉由上述的硅晶圆工艺，使得制作成本低，而且在工艺过程中可以将芯片顶面或底部的碎屑排掉。
请参阅图11，本发明的另一硅晶圆制作流程及图12至图18的制作结构示意图。如图所示：本发明的晶圆工艺的另一种的切割方法，如步骤200，备有一硅晶圆(silicon wafer)1(如图12所示)。
步骤202，在该硅晶圆1的正面上印刷有一指环状(Seal-ring)的金属层2。
步骤204，在该金属层2印制后，通过凸块技术于该金属层2的表面上形成有锡铅凸块(Solder Bump)的凸块层3(如图12所示)。
步骤206，在该凸块层3制作后，于该凸块层3上贴覆有一晶背研磨贴带(Backside Grinding Tape)4(如图13所示)。
步骤208，利用研磨机(图中未示)对该硅晶圆1的背面进行研磨，依设计所需的厚度进行研磨(如图14所示)。
步骤210中，在该硅晶圆1背面研磨后，进行半切割(Half Cutting)工艺，以利用切割刀9在该硅晶圆1背面上切割形成一深度接近该金属层2的切割道91(如图15所示)。
步骤212，在硅晶圆1背面切割后，将晶背研磨贴带4剥去后，将硅晶圆1背面贴覆有切割贴带7(如图16所示)。
步骤214，进行激光切割，在激光8切割时贯穿该金属层2及该硅晶圆1与该切割道91相通，即完成硅晶圆1切割成芯片(如图17、图18所示)。
藉由上述的硅晶圆工艺，使得制作成本低，而且在工艺过程中可以将芯片顶面或底部的碎屑排掉。
当然，本发明还可有其它多种实施例，在不背离本发明精神及其实质的情况下，熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形，但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。

Claims (8)

1.一种晶圆工艺的切割方法，其特征在于，包括：
a)、备有一硅晶圆；
b)、于硅晶圆的正面形成有一金属层；
c)、在该金属层形成有一凸块层；
d)、在该凸块层上贴覆有一晶背研磨贴带；
e)、在该硅晶圆背面上切割形成有一第一切割道；
f)、在该第一切割道形成后，以一第二切割刀伸入至该第一切割道的底部中，在该第一切割道的底部上成形有一第二切割道；
g)、对该硅晶圆的背面进行研磨至所预定的厚度，在研磨后该硅晶圆背面仅存有该第二切割道；
h)、将晶背研磨贴带剥去后，将该硅晶圆背面贴覆有切割贴带；
i)、以激光在金属层上切割，并贯穿该金属层及该硅晶圆与该第二切割道相通，即完成芯片切割。
2.根据权利要求1所述的晶圆工艺的切割方法，其特征在于，该步骤b的金属层是以印刷技术形成一指环状。
3.根据权利要求2所述的晶圆工艺的切割方法，其特征在于，于步骤c中以凸块技术于该金属层的表面上形成有锡铅凸块的凸块层。
4.根据权利要求3所述的晶圆工艺的切割方法，其特征在于，在步骤f的该第二切割道深度为近于该金属层。
5.一种晶圆工艺的切割方法，其特征在于，包括：
a)、备有一硅晶圆；
b)、于硅晶圆的正面形成有一金属层；
c)、在该金属层形成有一凸块层；
d)、将该凸块层上贴覆有一晶背研磨贴带；
e)、对该硅晶圆的背面进行研磨至预定厚度；
f)、在该硅晶圆背面上切割形成有一切割道；
g)、将晶背研磨贴带剥去后，将该硅晶圆背面贴覆有切割贴带；
h)、以激光在金属层上切割，并贯穿该金属层及该硅晶圆与该第二切割道相通，即完成芯片切割。
6.根据权利要求5所述的晶圆工艺的切割方法，其特征在于，该步骤b的金属层是以印刷技术形成一指环状。
7.根据权利要求6所述的晶圆工艺的切割方法，其特征在于，于步骤c中以凸块技术于该金属层的表面上形成有锡铅凸块的凸块层。
8.根据权利要求7所述的晶圆工艺的切割方法，其特征在于，在步骤f的该切割道深度为近于该金属层。
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