CN104061531A - 一种波长转换装置的制作方法 - Google Patents
一种波长转换装置的制作方法 Download PDFInfo
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- CN104061531A CN104061531A CN201310093876.0A CN201310093876A CN104061531A CN 104061531 A CN104061531 A CN 104061531A CN 201310093876 A CN201310093876 A CN 201310093876A CN 104061531 A CN104061531 A CN 104061531A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract 5
- 238000006243 chemical reaction Methods 0.000 title abstract description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 152
- 239000011521 glass Substances 0.000 claims abstract description 95
- 239000002002 slurry Substances 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 229920002545 silicone oil Polymers 0.000 claims abstract description 65
- 239000000843 powder Substances 0.000 claims abstract description 38
- 238000005245 sintering Methods 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims description 80
- 239000000428 dust Substances 0.000 claims description 57
- 239000000919 ceramic Substances 0.000 claims description 25
- 238000002360 preparation method Methods 0.000 claims description 24
- 238000000465 moulding Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 239000011222 crystalline ceramic Substances 0.000 claims description 11
- 229910002106 crystalline ceramic Inorganic materials 0.000 claims description 11
- 239000003921 oil Substances 0.000 claims description 6
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical group CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000005297 pyrex Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 abstract description 20
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 238000002156 mixing Methods 0.000 abstract description 2
- 238000007493 shaping process Methods 0.000 abstract 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000002844 melting Methods 0.000 description 15
- 230000008018 melting Effects 0.000 description 14
- 239000011148 porous material Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 7
- 239000000741 silica gel Substances 0.000 description 7
- 229910002027 silica gel Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- -1 polysiloxane Polymers 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- XLXGCFTYXICXJF-UHFFFAOYSA-N ethylsilicon Chemical compound CC[Si] XLXGCFTYXICXJF-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920003216 poly(methylphenylsiloxane) Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105047795A (zh) * | 2015-08-26 | 2015-11-11 | 朱中华 | 一种荧光基板及发光装置的制备方法 |
WO2016078557A1 (zh) * | 2014-11-21 | 2016-05-26 | 深圳市绎立锐光科技开发有限公司 | 一种波长转换结构的制备方法及相关波长转换结构 |
CN106950617A (zh) * | 2015-12-14 | 2017-07-14 | 精工爱普生株式会社 | 波长转换元件及其制造方法、照明装置、投影仪 |
CN109786538A (zh) * | 2018-12-06 | 2019-05-21 | 上海师范大学 | 一种仿自然光led健康照明器件及其制备方法 |
CN109873070A (zh) * | 2018-09-19 | 2019-06-11 | 上海师范大学 | 一种用于led照明的发光陶瓷及其制备方法和应用 |
CN110416387A (zh) * | 2019-06-28 | 2019-11-05 | 苏州紫灿科技有限公司 | 一种高散热白光激光片及制备方法 |
CN110488560A (zh) * | 2018-05-14 | 2019-11-22 | 中强光电股份有限公司 | 波长转换元件及其形成方法、波长转换模块以及投影装置 |
CN111380037A (zh) * | 2018-12-27 | 2020-07-07 | 深圳光峰科技股份有限公司 | 波长转换装置及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS581767A (ja) * | 1981-06-26 | 1983-01-07 | Matsushita Electronics Corp | 管球用接着剤 |
CN1912743A (zh) * | 2005-08-11 | 2007-02-14 | 东京应化工业株式会社 | 用于形成功能性图案的感光性树脂组合物及功能性图案的形成方法 |
CN102437255A (zh) * | 2011-11-25 | 2012-05-02 | 上海祥羚光电科技发展有限公司 | 旋转涂覆法制备白光led用荧光片 |
WO2012081411A1 (ja) * | 2010-12-13 | 2012-06-21 | 東レ株式会社 | 蛍光体シート、これを用いたledおよび発光装置ならびにledの製造方法 |
-
2013
- 2013-03-21 CN CN201310093876.0A patent/CN104061531B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS581767A (ja) * | 1981-06-26 | 1983-01-07 | Matsushita Electronics Corp | 管球用接着剤 |
CN1912743A (zh) * | 2005-08-11 | 2007-02-14 | 东京应化工业株式会社 | 用于形成功能性图案的感光性树脂组合物及功能性图案的形成方法 |
WO2012081411A1 (ja) * | 2010-12-13 | 2012-06-21 | 東レ株式会社 | 蛍光体シート、これを用いたledおよび発光装置ならびにledの製造方法 |
CN102437255A (zh) * | 2011-11-25 | 2012-05-02 | 上海祥羚光电科技发展有限公司 | 旋转涂覆法制备白光led用荧光片 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016078557A1 (zh) * | 2014-11-21 | 2016-05-26 | 深圳市绎立锐光科技开发有限公司 | 一种波长转换结构的制备方法及相关波长转换结构 |
CN105047795A (zh) * | 2015-08-26 | 2015-11-11 | 朱中华 | 一种荧光基板及发光装置的制备方法 |
CN106950617A (zh) * | 2015-12-14 | 2017-07-14 | 精工爱普生株式会社 | 波长转换元件及其制造方法、照明装置、投影仪 |
CN110488560A (zh) * | 2018-05-14 | 2019-11-22 | 中强光电股份有限公司 | 波长转换元件及其形成方法、波长转换模块以及投影装置 |
CN109873070A (zh) * | 2018-09-19 | 2019-06-11 | 上海师范大学 | 一种用于led照明的发光陶瓷及其制备方法和应用 |
CN109786538A (zh) * | 2018-12-06 | 2019-05-21 | 上海师范大学 | 一种仿自然光led健康照明器件及其制备方法 |
CN111380037A (zh) * | 2018-12-27 | 2020-07-07 | 深圳光峰科技股份有限公司 | 波长转换装置及其制造方法 |
CN110416387A (zh) * | 2019-06-28 | 2019-11-05 | 苏州紫灿科技有限公司 | 一种高散热白光激光片及制备方法 |
CN110416387B (zh) * | 2019-06-28 | 2020-12-01 | 苏州紫灿科技有限公司 | 一种高散热白光激光片及制备方法 |
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Effective date of registration: 20171102 Address after: 518055 Guangdong city of Shenzhen province Nanshan District Xili town tea light road Shenzhen city integrated circuit design and application of Industrial Park 401 Patentee after: APPOTRONICS Corp.,Ltd. Address before: 518057 Guangdong city of Shenzhen province Nanshan District Xili town tea light road on the south side of Shenzhen integrated circuit design and application of Industrial Park 402, 403, 410-1, 411 Yi Li Rui Light Technology Development Co. Ltd. Patentee before: YLX Inc. |
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Address after: 518000 Nanshan District, Shenzhen, Guangdong, Guangdong Province, Guangdong Road, 63 Xuefu Road, high-tech zone, 21 headquarters building, 22 floor. Patentee after: SHENZHEN GUANGFENG TECHNOLOGY Co.,Ltd. Address before: 518055 Guangdong province Shenzhen Nanshan District Xili town Cha Guang road Shenzhen integrated circuit design application Industrial Park 401 Patentee before: APPOTRONICS Corp.,Ltd. |
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Address after: 518000 20-22, 20-22 headquarters building, 63 high tech Zone, Xuefu Road, Nanshan District, Guangdong Province, Guangdong. Patentee after: APPOTRONICS Corp.,Ltd. Address before: 518000 20-22, 20-22 headquarters building, 63 high tech Zone, Xuefu Road, Nanshan District, Guangdong Province, Guangdong. Patentee before: SHENZHEN GUANGFENG TECHNOLOGY Co.,Ltd. |
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Address after: 518000 20-22, 20-22 headquarters building, 63 high tech Zone, Xuefu Road, Nanshan District, Guangdong Province, Guangdong. Patentee after: SHENZHEN GUANGFENG TECHNOLOGY Co.,Ltd. Address before: 518055 Guangdong province Shenzhen Nanshan District Xili town Cha Guang road Shenzhen integrated circuit design application Industrial Park 401 Patentee before: APPOTRONICS Corp.,Ltd. |