CN104050107B - 固态储存装置及遭遇低电压时的数据处理方法 - Google Patents
固态储存装置及遭遇低电压时的数据处理方法 Download PDFInfo
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- CN104050107B CN104050107B CN201310077807.0A CN201310077807A CN104050107B CN 104050107 B CN104050107 B CN 104050107B CN 201310077807 A CN201310077807 A CN 201310077807A CN 104050107 B CN104050107 B CN 104050107B
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- data
- structure cell
- flash memory
- stored
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
- G11C16/225—Preventing erasure, programming or reading when power supply voltages are outside the required ranges
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5641—Multilevel memory having cells with different number of storage levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
Abstract
Description
Claims (8)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310077807.0A CN104050107B (zh) | 2013-03-12 | 2013-03-12 | 固态储存装置及遭遇低电压时的数据处理方法 |
US14/025,925 US9053795B2 (en) | 2013-03-12 | 2013-09-13 | Solid state drive encountering power failure and associated data storage method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310077807.0A CN104050107B (zh) | 2013-03-12 | 2013-03-12 | 固态储存装置及遭遇低电压时的数据处理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104050107A CN104050107A (zh) | 2014-09-17 |
CN104050107B true CN104050107B (zh) | 2017-01-25 |
Family
ID=51502986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310077807.0A Active CN104050107B (zh) | 2013-03-12 | 2013-03-12 | 固态储存装置及遭遇低电压时的数据处理方法 |
Country Status (2)
Country | Link |
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US (1) | US9053795B2 (zh) |
CN (1) | CN104050107B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106569730B (zh) * | 2015-10-08 | 2019-03-22 | 光宝电子(广州)有限公司 | 固态储存装置及其相关资料写入方法 |
TWI564716B (zh) * | 2015-10-08 | 2017-01-01 | 光寶電子(廣州)有限公司 | 固態儲存裝置及其相關資料寫入方法 |
US9646721B1 (en) * | 2016-03-31 | 2017-05-09 | EMC IP Holding Company LLC | Solid state drive bad block management |
JP2019200826A (ja) * | 2018-05-14 | 2019-11-21 | 東芝メモリ株式会社 | 半導体記憶装置 |
CN111427805B (zh) * | 2020-03-19 | 2023-04-07 | 电子科技大学 | 一种基于页模式操作的存储器快速访问方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101802923A (zh) * | 2007-08-06 | 2010-08-11 | 桑迪士克公司 | 用于非易失性存储器的增强型写中断机制 |
CN103530198A (zh) * | 2012-07-05 | 2014-01-22 | 慧荣科技股份有限公司 | 数据储存装置与闪存操作方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9123422B2 (en) * | 2012-07-02 | 2015-09-01 | Super Talent Technology, Corp. | Endurance and retention flash controller with programmable binary-levels-per-cell bits identifying pages or blocks as having triple, multi, or single-level flash-memory cells |
WO2012001917A1 (ja) * | 2010-06-29 | 2012-01-05 | パナソニック株式会社 | 不揮発性記憶システム、メモリシステム用の電源回路、フラッシュメモリ、フラッシュメモリコントローラ、および不揮発性半導体記憶装置 |
-
2013
- 2013-03-12 CN CN201310077807.0A patent/CN104050107B/zh active Active
- 2013-09-13 US US14/025,925 patent/US9053795B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101802923A (zh) * | 2007-08-06 | 2010-08-11 | 桑迪士克公司 | 用于非易失性存储器的增强型写中断机制 |
CN103530198A (zh) * | 2012-07-05 | 2014-01-22 | 慧荣科技股份有限公司 | 数据储存装置与闪存操作方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104050107A (zh) | 2014-09-17 |
US20140269056A1 (en) | 2014-09-18 |
US9053795B2 (en) | 2015-06-09 |
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Effective date of registration: 20161228 Address after: No. 25 West Road, Science City, Guangzhou high tech Industrial Development Zone, Guangdong, China Applicant after: Lite-On Electronic (Guangzhou) Co., Ltd. Applicant after: Guangbao Sci-Tech Co., Ltd. Address before: Ruiguang road Taiwan Taipei City Neihu district China No. 392 22 floor Applicant before: Guangbao Sci-Tech Co., Ltd. |
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Effective date of registration: 20200110 Address after: Room 302, factory a, No.8 Guangbao Road, Science City, Huangpu District, Guangzhou City, Guangdong Province Patentee after: Jianxing storage technology (Guangzhou) Co., Ltd Address before: No. 25 West Road, Science City, Guangzhou high tech Industrial Development Zone, Guangdong, China Co-patentee before: Lite-On Technology Corporation Patentee before: Guangbao Electronics (Guangzhou) Co., Ltd. |
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