CN104030229A - 薄膜装置 - Google Patents
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- 239000000463 material Substances 0.000 claims description 12
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- 229910052751 metal Inorganic materials 0.000 claims description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract 5
- 238000002425 crystallisation Methods 0.000 abstract 4
- 230000008025 crystallization Effects 0.000 abstract 4
- 239000010408 film Substances 0.000 description 46
- 238000006073 displacement reaction Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/007—For controlling stiffness, e.g. ribs
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- G—PHYSICS
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- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
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- G01L9/005—Non square semiconductive diaphragm
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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Abstract
本发明公开一种薄膜装置，具有多个薄膜单元，每一薄膜单元包括一结晶层以及一环绕层。结晶层具有一多边形的形状。环绕层部份位于结晶层之上，此环绕层围绕于结晶层。本发明的薄膜装置的结构稳定而坚固且不变形，可有效改善薄膜装置的灵敏度，以进而提升于微机电的应用范围。
Description
技术领域
本发明是关于一种薄膜装置，特别是一种可增强结构强度并可使结构稳定而坚固且不变形的薄膜装置。
背景技术
在半导体制程中，大多数的元件制作皆自金属层与氧化层的连续制程而来，其中金属层多由物理性方式所沉积形成，故金属层通常具有张应力，而氧化层多由化学性方式所沉积形成，故氧化层通常具有压应力。微机电(Micro-Electro-Mechanical-System，以下简称MEMS)元件为一种常见且使用金属层与氧化层相互堆叠形成的半导体元件，所以MEMS元件的残留应力是一个具有压应力与张应力所组合而成的等效应力值。以半导体制程制作的MEMS元件其最大的优点为整合特殊用途积体电路(Application-Specific IntegratedCircuit,ASIC)与MEMS于同一平面，省去了复杂的封装方式，但最大的难题即为MEMS结构的残留应力。
常见的XY轴加速度计即为MEMS元件的应用，因为金属层具有张应力(结构呈上弯曲)，而氧化层具有压应力(结构呈下弯曲)，其中氧化层是通过化学方式产生键结再由键结产生薄膜，此氧化层的沉积温度高且键结与键结间的力量造成氧化层的残留应力大于金属的残留应力，故残留应力以氧化层为主并使MEMS结构呈下弯曲。此时，虽可使用快速退火(Rapid Thermal Annealing,RTA)系统以进行残留应力的释放，然而尚有复合材料的热膨胀系数必须进行考虑，例如金属铝的热膨胀系数是23ppm/℃，而氧化层的热膨胀系数是0.5ppm/℃，两种不同材料的堆叠造成热膨胀系数约有46倍的差距。如此一来，当MEMS结构受到温度的变化时，除了本身的残留应力之外，仍必须再考虑两种不同材料堆叠时的热膨胀现象。
一般而言，目前各种已用于现有技术中的MEMS元件大多易受残留应力与温度的影响，且元件结构不够坚固以致于不稳定而变形。另一方面，结构强度不足将造成MEMS元件在受到外力的变化时呈现翘曲的现象。
发明内容
本发明提供一种薄膜装置，藉以增强结构的强度，并使结构稳定、坚固且不变形。
根据本发明的一实施例，一种薄膜装置具有多个薄膜单元，每一薄膜单元包括一结晶层以及一环绕层。结晶层具有一多边形的形状。环绕层部份位于结晶层之上，此环绕层围绕于结晶层。
本发明所提供的薄膜装置，藉由多个具有正六边形的结晶层，再藉由多个环绕层以围绕于这些结晶层，以组合这些结晶层与这些环绕层成为多个薄膜单元，并通过一衔接层来连接这些薄膜单元，以进而增强薄膜装置的结构强度，并可使薄膜装置的结构稳定而坚固且不变形。如此一来，可有效改善薄膜装置的灵敏度，以进而提升于微机电的应用范围。
以下结合附图和具体实施例对本发明进行详细描述，但不作为对本发明的限定。
附图说明
图1为本发明的薄膜装置的薄膜单元的上视示意图；
图2为本发明的薄膜装置的薄膜单元的侧视示意图；
图3为本发明的薄膜装置的局部示意图；
图4为本发明的薄膜装置的制造流程图。
其中，附图标记
100 薄膜装置
101 薄膜单元
110 结晶层
112 第一表面
120 环绕层
122 第二表面
130 衔接层
具体实施方式
下面结合附图和具体实施例对本发明技术方案进行详细的描述，以更进一步了解本发明的目的、方案及功效，但并非作为本发明所附权利要求保护范围的限制。
请同时参照图1、图2、及图3，其分别为根据本发明的一实施例的薄膜装置的薄膜单元的上视示意图、薄膜装置的薄膜单元的侧视示意图、及薄膜装置的局部示意图。本实施例的薄膜装置100适于微机电元件，例如麦克风、压力计、高度计、流量计、或是触觉感测器，亦即可通过此薄膜装置100作为微机电的元件结构。此薄膜装置100具有多个薄膜单元101，每一薄膜单元101包括一结晶层110以及一环绕层120。
结晶层110具有一第一表面112且大致上可呈一多边形的形状，亦即此薄膜装置100具有多个结晶层110，且这些结晶层110彼此相邻并位于同一平面上。在本实施例中，结晶层110的多边形的形状例如可为正六边形，此结晶层110例如可接收来自于各方向的多个水平分力或是多个垂直分力，并致使这些水平分力或是这些垂直分力得以彼此互相达成力平衡的状态。换句话说，此结晶层110可具有稳定的水平位移或是垂直位移的结构特性。其中，结晶层110的材料例如可为多晶硅，但本实施例不限于此，结晶层110亦可使用其他热膨胀系数小的材料来实施。
环绕层120具有一第二表面122且部份位于结晶层110的第一表面112之上，且环绕层120围绕于结晶层110。在本实施例中，此环绕层120用以增强前述的结晶层110的结构强度，此环绕层120例如可接收前述的各方向的多个水平分力或是多个垂直分力，并致使结晶层110具有稳定的水平位移或是垂直位移的结构特性，亦可防止结晶层110受这些水平分力或是这些垂直分力的影响而导致变形。其中，环绕层120的材料例如可为钨，但本实施例不限于此，环绕层120亦可使用其他结构硬度高的材料来实施。
此薄膜装置100更包括一衔接层130，用以连接前述的多个薄膜单元101，且衔接层130部份位于每一薄膜单元101的环绕层120的第二表面122之上。在本实施例中，此衔接层130例如可作为类似弹簧类的减震结构，且衔接层130用以接收来自于外界的施力或是振动所导致的水平位移或是垂直位移，并致使这些薄膜单元101保持稳定且坚固的结构而不至于变形。其中，衔接层130的材料例如可为铝、钨、或铂等金属，但本实施例不限于此，衔接层130亦可使用其他类似的金属材料来实施。
请接着参照图4，为根据本发明的一实施例的薄膜装置的制造流程图。首先，可于例如一硅基板上使用薄膜沉积的方式，以成长例如多晶硅的多个结晶层110(步骤S401)。接着，先将例如光阻的材料涂布于这些多晶硅结晶层110的上方，通过一第一光罩再经由曝光与显影的微影制程(Lithography)将定义出一第一硬遮罩(Hard Mask)，此第一硬遮罩所未遮蔽的区域即为欲制作例如钨的多个环绕层120的区域(步骤S402)。接着，使用例如电子枪(E-Gun)或是溅镀机(Sputtering)以将金属钨镀膜(Coating)于这些结晶层110的第一表面112之上(步骤S403)。接着，将位于此第一硬遮罩所遮蔽的区域上方的多余的金属钨掀离(Lift-Off)，以形成这些钨的环绕层120(步骤S404)。
接着，将前述的光阻的材料再涂布于由这些结晶层110与这些环绕层120所组成的多个薄膜单元101的上方，通过一第二光罩再经由前述的曝光与显影的微影制程以定义出一第二硬遮罩，此第二硬遮罩所未遮蔽的区域即为欲制作例如金属的衔接层130的区域(步骤S405)。接着，使用前述的电子枪或是溅镀机以将金属镀膜于这些环绕层120的第二表面122之上(步骤S406)。最后，将位于此第二硬遮罩所遮蔽的区域上方的多余的金属掀离，以形成金属的衔接层130(步骤S407)。
综上所述，本发明的实施例所揭露的薄膜装置，藉由多个具有正六边形的结晶层，再藉由多个环绕层以围绕于这些结晶层，以组合这些结晶层与这些环绕层成为多个薄膜单元，并通过一衔接层来连接这些薄膜单元，以进而增强薄膜装置的结构强度，并可使薄膜装置的结构稳定而坚固且不变形。如此一来，可有效改善薄膜装置的灵敏度，以进而提升于微机电的应用范围。
当然，本发明还可有其它多种实施例，在不背离本发明精神及其实质的情况下，熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形，但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。
Claims (6)
1.一种薄膜装置，其特征在于，具有多个薄膜单元，每一该薄膜单元包括：
一结晶层，具有一多边形的形状；以及
一环绕层，部份位于该结晶层之上，该环绕层围绕于该结晶层。
2.如权利要求1所述的薄膜装置，其特征在于，更包括一衔接层，用以连接该些薄膜单元，该衔接层部份位于每一该薄膜单元的该环绕层之上。
3.如权利要求2所述的薄膜装置，其特征在于，该衔接层的材料为金属。
4.如权利要求1所述的薄膜装置，其特征在于，该结晶层的材料为多晶硅。
5.如权利要求1所述的薄膜装置，其特征在于，该多边形为正六边形。
6.如权利要求1所述的薄膜装置，其特征在于，该环绕层的材料为钨。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102108322 | 2013-03-08 | ||
| TW102108322A TWI490923B (zh) | 2013-03-08 | 2013-03-08 | 薄膜裝置 |
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| Publication Number | Publication Date |
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| CN104030229A true CN104030229A (zh) | 2014-09-10 |
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| CN201410071474.5A Pending CN104030229A (zh) | 2013-03-08 | 2014-02-28 | 薄膜装置 |
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| Country | Link |
|---|---|
| US (1) | US9018771B2 (zh) |
| CN (1) | CN104030229A (zh) |
| TW (1) | TWI490923B (zh) |
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| WO2017217150A1 (ja) * | 2016-06-14 | 2017-12-21 | 株式会社デンソー | 圧力センサ |
| JP2017223643A (ja) * | 2016-06-14 | 2017-12-21 | 株式会社デンソー | 圧力センサ |
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| EP1653494A2 (en) * | 2004-10-27 | 2006-05-03 | Samsung Electronics Co., Ltd. | Micro thin-film structure, MEMS switch employing such a micro thin-film, and method of fabricating them |
| WO2008108413A1 (ja) * | 2007-03-05 | 2008-09-12 | Kyocera Corporation | 微小構造体装置および微小構造体装置の製造方法 |
| CN102143906A (zh) * | 2008-09-10 | 2011-08-03 | 松下电器产业株式会社 | 微机电系统器件及其制造方法 |
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| CN102757010A (zh) * | 2011-04-20 | 2012-10-31 | 特罗尼克斯微系统有限公司 | 微机电系统(mems)装置 |
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| JP5309898B2 (ja) * | 2008-10-31 | 2013-10-09 | セイコーエプソン株式会社 | 圧力センサ装置 |
| US20120170103A1 (en) * | 2010-12-31 | 2012-07-05 | Pavan Gupta | Spatial Light Modulators and Fabrication Techniques |
| US8653634B2 (en) * | 2012-06-11 | 2014-02-18 | Advanced Semiconductor Engineering, Inc. | EMI-shielded semiconductor devices and methods of making |
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- 2013-03-08 TW TW102108322A patent/TWI490923B/zh not_active IP Right Cessation
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- 2014-02-28 CN CN201410071474.5A patent/CN104030229A/zh active Pending
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| EP1653494A2 (en) * | 2004-10-27 | 2006-05-03 | Samsung Electronics Co., Ltd. | Micro thin-film structure, MEMS switch employing such a micro thin-film, and method of fabricating them |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI490923B (zh) | 2015-07-01 |
| TW201435981A (zh) | 2014-09-16 |
| US20140252362A1 (en) | 2014-09-11 |
| US9018771B2 (en) | 2015-04-28 |
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