CN1040235C - Cylindrical helical magnetic control cathode arc evaporation source - Google Patents
Cylindrical helical magnetic control cathode arc evaporation source Download PDFInfo
- Publication number
- CN1040235C CN1040235C CN94114941A CN94114941A CN1040235C CN 1040235 C CN1040235 C CN 1040235C CN 94114941 A CN94114941 A CN 94114941A CN 94114941 A CN94114941 A CN 94114941A CN 1040235 C CN1040235 C CN 1040235C
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- magnet
- cathode
- arc
- source
- negative electrode
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- 238000001704 evaporation Methods 0.000 title claims description 11
- 230000008020 evaporation Effects 0.000 title claims description 10
- 239000011159 matrix material Substances 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000000977 initiatory effect Effects 0.000 claims description 3
- 239000000498 cooling water Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 4
- 239000013077 target material Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010406 cathode material Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910000828 alnico Inorganic materials 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The present invention discloses an arc evaporator source of a columnar magnetron cathode. Magnets in the arc evaporator source of a columnar magnetron cathode are arranged in a spiral line type along the axial direction of a cathode. When the arc evaporator source of a columnar magnetron cathode works, the discharge track of a cathode surface is in the spiral line type. The arc evaporator source of a columnar magnetron cathode has the advantages of uniform cathode surface discharge, uniform etching, large discharge area, high target material utilizing rate and long service life. The arc evaporator source of a columnar magnetron cathode can be widely used in various vacuum coaters.
Description
The present invention relates to physical vapor deposition, especially for the column magnetron cathode electric arc evaporation source of vacuum plating.
Vacuum Coating method is a kind of metal or non-metal workpiece to be placed vacuum chamber, utilizes glow discharge or arc discharge workpiece surface to be plated the method for metal or its compound film.
The cathodic arc evaporation source is to utilize the arc discharge method, makes evaporation of negative electrode Coating Materials and ionization, produces the device of the required plasma flow of vacuum plating.
Arc process relates to the ion of the cathode substance of emitting from the cathode arc highlight, and the cathode arc highlight is a kind of phenomenon that is present in minimum spatial high current density, changes at a high speed.Under vacuum state, the metal ion that is drawn onto cathode surface forms space charge layer, produces highfield thus and makes the point that work function is little on the cathode surface (crystal boundary or tiny crack) beginning emitting electrons.Indivedual high points of emitting electrons density produce highdensity electric current, and the heat that this electric current produces rises this temperature, and further heat of emission electronics, this retroactive effect makes the electric current concentration of local.Emitting electrons and ion stay the discharge trace then because the heat that the electric current concentration of local produces makes cathode material produce the plasma of explosive ground in this part, emit fused cathode material particle simultaneously.The sucked back cathode surface of a part in the ion of emission forms space charge layer once more, produces highfield, makes the little point of new work function begin emitting electrons again.
In order to improve the performance of evaporating and ionizing source, generally in system, be provided with magnetic field.The interaction of horizontal component in cathode surface magnetic field (B, about 20-50 Gauss) and vertical electric field, more effectively fixed electron, ion prolong the electronic motion track, thereby have improved the probability of ionization by collision.Magnetic field can make arc plasma accelerated motion, increases emission of cathode electronics and amount of ions, improves the density and the directional property of line, reduces the content of small (molten drop).This has just correspondingly improved the quality of sedimentation rate and rete.So magnetic field is vital for the cathodic arc evaporation source.
As everyone knows, the column arc source has its unique advantage than little arc source in the past, big arc source, is that vast plated film industry is all in the new technology of competitively developing.The column arc source can replace a plurality of little arcs source, and structure is become simply, becomes only control a bit by original multiple spot control, and is minimum thereby failure rate is reduced to, and film forming homogeneity improves greatly.Compare with big arc source, the layout of vacuum chamber is more simple, and space availability ratio is bigger.
CN91230847.8 discloses a kind of Style Columu Talget, and alnico magnets are arranged in Style Columu Talget, during work, under the effect in the magnetic field of this magnet, forms a cyclic arc, and magnet moves up and down along post target axle simultaneously, and cyclic arc is moved up and down.The shortcoming of this arc source is little, the inefficiency of machining area, and needs complicated running gear.
The purpose of this invention is to provide a kind of column magnetron cathode electric arc evaporation source that has overcome above-mentioned defective.
Arc source of the present invention comprises arc power, cylindrical cathode, is enclosed within the shielding case of cathode end, negative electrode inner magnet, the matrix of fixed magnets, the transmission mechanism that makes the magnet rotation, cooling channel and the arc initiation device in the negative electrode, and wherein said magnet is arranged to line style in the shape of a spiral along cathode axis.
Magnet preferably is duplex line style layout in the arc source of the present invention, and wherein a spiral line type magnet N is extremely outside, and another S is extremely outside.Described magnet preferably is the duplex line style of closed at both ends and arranges.
The further preferred scheme of the present invention is that matrix is a column, band spiral line type groove on the surface, and block magnet arrangements is in groove.
Further preferred scheme is a band duplex line style groove on the matrix surface, and block magnet arrangements is in groove, and is extremely outside along the magnet block N that a spiral-shaped groove is arranged, extremely outside along the magnet block S of another layout.
Transmission mechanism drive volution magnet at the uniform velocity rotated when arc source of the present invention was worked, after the striking, whole cathode surface discharge is even, etching is even, and machining area is big, the target utilization height, can 360 ° and evaporation simultaneously up and down, high efficiency, long service life, and the device structure supporting with it simplified greatly, improve the vacuum chamber utilization ratio, saved material, reduced cost.
Further specify the present invention below in conjunction with drawings and Examples.
Accompanying drawing is the vacuum coater synoptic diagram that is provided with arc source of the present invention.
Number in the figure 1 is a negative electrode, and it is partly cut open, and 2,2 ' is shielding case, 3 is the matrix of fixed magnets, and 4 for being arranged to the magnet of duplex line style, and 5 is arc initiation device, 6 for making the turning axle of magnet rotation, and 7 are cathode surface discharge track, and 8 is the workpiece bias power supply, 9 is arc power, and 10 is inlet mouth, and 11 is vacuum orifice, 12 is flange, 13 is work rest, and 14 is vacuum-chamber wall, and 15 is the cooling channel.
Embodiment
By accompanying drawing preparation with arc source of the present invention and film coating apparatus are installed, wherein cylindric negative electrode external diameter is 64mm, long 500mm, thick 10mm has the duplex line style groove of closed at both ends (identical shown in the track with discharge among the figure) on the cylindric matrix, the plurality of small blocks permanent magnet is arranged in the groove, wherein the magnet piece N in spiral line type groove is extremely outside, another middle S is extremely outside, with tackiness agent magnet is fixed in the groove, and magneticstrength is controlled to be the magneticstrength horizontal component at the cathode surface place
Be 20-50 Gauss, discharge parameter is: 20V, 50A-200A, the highest 400A, workpiece temperature 200-400 ℃.During plated film, the workpiece after will cleaning earlier is installed on the work rest, after vacuumizing, charges into gas, short-circuit arc produces the main arc between negative electrode Coating Materials and the negative electrode locular wall, makes evaporation of negative electrode Coating Materials and ionization, the surface that speeds away forms needed plasma flow, film forming on workpiece.During arc source work, the double helical form that bipitch type magnet makes region of discharge present down sealing along the cylindrical cathode surface distributes, magnet at the uniform velocity rotates under external force, 2 discharges are arranged on each cross section like this, two region of discharge respectively has a little circular arc, its top horizontal tangent direction region of discharge size almost with cross section on 2 machining area suitable, so guaranteed whole cathode target surface discharge evenly, etching is even, and target utilization reaches more than 70%.Because the point of attachment at two of target can not be utilized, target is used certain thickness and also can not be re-used, if the target etching is too thin, in case penetrate, water coolant enters vacuum chamber and vacuum system meeting damage equipment, so the target among the present invention has almost reached limit utilization ratio.
Claims (2)
1, a kind of cylindrical helical magnetic control cathode arc evaporation source, comprise shielding case, the negative electrode inner magnet of arc power, cylindrical cathode end, the matrix of fixed magnets, the transmission mechanism that makes the magnet rotation, cooling water channel and the arc initiation device in the negative electrode, it is characterized in that described magnet is bifilar helix along the negative electrode axis and arranges, wherein a spiral yarn shaped magnet N is extremely outside, and another magnet S is extremely outside.
2, cylindrical helical magnetic control cathode vaporation as claimed in claim 1 source is characterized in that described matrix is a column, band double spiral groove on the surface, and block magnet arrangements is in groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN94114941A CN1040235C (en) | 1994-08-18 | 1994-08-18 | Cylindrical helical magnetic control cathode arc evaporation source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN94114941A CN1040235C (en) | 1994-08-18 | 1994-08-18 | Cylindrical helical magnetic control cathode arc evaporation source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1117088A CN1117088A (en) | 1996-02-21 |
| CN1040235C true CN1040235C (en) | 1998-10-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN94114941A Expired - Fee Related CN1040235C (en) | 1994-08-18 | 1994-08-18 | Cylindrical helical magnetic control cathode arc evaporation source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1040235C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105970160B (en) * | 2016-06-09 | 2019-02-05 | 广东世创金属科技股份有限公司 | By vacuum plasma workpiece surface fast deposition increasing material manufacturing system |
| CN107723669A (en) * | 2017-08-22 | 2018-02-23 | 深圳市生波尔光电技术有限公司 | Column arc source and electric arc ion plating device |
| CN110468379A (en) * | 2019-08-27 | 2019-11-19 | 中国科学院金属研究所 | A kind of electric arc ion plating device configuring heated filament |
| CN112312604B (en) * | 2020-11-23 | 2024-10-15 | 中国航天空气动力技术研究院 | Excitation coil |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2099135U (en) * | 1991-10-26 | 1992-03-18 | 陆国民 | Plasma film coating machine for columnar target |
| CN1069776A (en) * | 1991-08-21 | 1993-03-10 | 南开大学 | The method and apparatus of arc vapor-phase deposition with magnetic confinement |
| CN1074247A (en) * | 1992-01-08 | 1993-07-14 | 北京长城钛金技术联合开发公司 | Cathode and long arc Plasma evaporating source with tubular |
| CN2196122Y (en) * | 1994-08-18 | 1995-05-03 | 马志坚 | Electric arc evaporation source with cylindrical magnetic control cathod |
-
1994
- 1994-08-18 CN CN94114941A patent/CN1040235C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1069776A (en) * | 1991-08-21 | 1993-03-10 | 南开大学 | The method and apparatus of arc vapor-phase deposition with magnetic confinement |
| CN2099135U (en) * | 1991-10-26 | 1992-03-18 | 陆国民 | Plasma film coating machine for columnar target |
| CN1074247A (en) * | 1992-01-08 | 1993-07-14 | 北京长城钛金技术联合开发公司 | Cathode and long arc Plasma evaporating source with tubular |
| CN2196122Y (en) * | 1994-08-18 | 1995-05-03 | 马志坚 | Electric arc evaporation source with cylindrical magnetic control cathod |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1117088A (en) | 1996-02-21 |
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| C53 | Correction of patent of invention or patent application | ||
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Address after: 100027, 401 north gate, 87 floor, 3 north gate, Xinyuan, Beijing, Chaoyang District Applicant after: Wang Fuzhen Address before: 100020 No. 101, west section, building 3, Kanto building, Chaoyang District, Beijing Applicant before: Ma Zhijian |
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Free format text: CORRECT: APPLICANT; FROM: MA ZHIJIAN TO: WANG FUZHEN |
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