CN1040236C - Cylindrical helix magnetic control sputtering source - Google Patents
Cylindrical helix magnetic control sputtering source Download PDFInfo
- Publication number
- CN1040236C CN1040236C CN94114940A CN94114940A CN1040236C CN 1040236 C CN1040236 C CN 1040236C CN 94114940 A CN94114940 A CN 94114940A CN 94114940 A CN94114940 A CN 94114940A CN 1040236 C CN1040236 C CN 1040236C
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- sputtering source
- magnet
- negative electrode
- magnetic control
- target
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Abstract
The present invention relates to a columnar magnetic cathode sputtering source. Magnets in the sputtering source are arranged in the axial direction of acathode in a type of a helical line. The sputtering source has the advantages of homogeneous discharge of a whole cathode surface, homogeneous etching, large discharge area, high utilization rate of a target and long service life. The sputtering source can be widely used for various vacuum plating devices.
Description
The present invention relates to physical vapor deposition, especially for the column-shape magnetron sputtering source of vacuum plating.
Vacuum Coating method is a kind of metal or non-metal workpiece to be placed vacuum chamber, utilizes glow discharge or arc discharge workpiece surface to be plated the method for metal or its compound film.
Sputtering source is to utilize electric glow discharge method, makes the atom sputtering of negative electrode Coating Materials deposit film forming sputter equipment to the surface of plating piece.
Electric glow discharge method relates under vacuum state, after imposing the volts DS of general 300-1000V between negative electrode (target) and the anode (vacuum-chamber wall), produce direct current glow discharge, working gas is ionized, positive ion is quickened and bombarding cathode (target) surface by negative electrode, makes the atom sputtering of cathode surface deposit film forming to the surface of plating piece.Utilize the negative electrode sputtering time different of unlike material with control cathode, just can on workpiece surface, plate the rete of unlike material and different thickness.
In order to improve the performance of sputtering source, generally in system, be provided with magnetic field.Magnetic field helps more effectively fixed electron, ion, prolong the electronic motion track, improved the ionization by collision probability of electron pair working gas such as Ar gas, more effectively utilized the energy of electronics, help target is formed highdensity positive ion bombardment, make target as sputter more effective.So magnetic field is vital for sputtering source.
As everyone knows, there is its unique advantage in the column-shape magnetron sputtering source than facet magnetic control source in the past, big plane magnetic control source, is that vast plated film industry is all in the new technology of competitively developing.
CN89215781.X discloses a kind of column-shape magnetron sputtering source, has some vertical bar shaped magnet steel to be parallel to target in its target and is axially placed on the matrix.The result is that the etching at target surface middle part is even, but the band at two can cause the horizontal zanjon of too early appearance, in case penetrate, water coolant can enter vacuum chamber and vacuum system and damage equipment, and it is insufficient that target is utilized, and utilization ratio is low, and the post target is long more, and utilization ratio is low more.
The purpose of this invention is to provide a kind of column-shape magnetron sputtering source that has overcome above-mentioned defective.
Sputtering source of the present invention comprises shielding power supply, cylindrical cathode, is enclosed within the shielding case of cathode end, negative electrode inner magnet, the matrix of fixed magnets, the transmission mechanism that makes the magnet rotation and the cooling channel in the negative electrode, and wherein said magnet is arranged to line style in the shape of a spiral along cathode axis.
Magnet preferably is duplex line style layout in the sputtering source of the present invention, and wherein a spiral line type magnet N is extremely outside, and another S is extremely outside.Described magnet preferably is the duplex line style of closed at both ends and arranges.
The further preferred scheme of the present invention is that matrix is a column, band spiral line type groove on the surface, and block magnet arrangements is in groove.
Further preferred scheme is a band duplex line style groove on the matrix surface, and block magnet arrangements is in groove, and is extremely outside along the magnet block N that a spiral-shaped groove is arranged, extremely outside along the magnet block S of another layout.
Sputtering source of the present invention have machining area big, can 360 ° sputter simultaneously, high efficiency, target surface etching evenly, characteristics such as long service life, target utilization height, and make that the device structure supporting with it simplified greatly, the vacuum chamber utilization ratio improves, save material, reduce cost.
Further specify the present invention below in conjunction with drawings and Examples.
Accompanying drawing is the vacuum coater synoptic diagram that is provided with sputtering source of the present invention.
Number in the figure 1 is a negative electrode, and it is partly cut open, and 2,2 ' is shielding case, 3 is the matrix of fixed magnets, and 4 for being arranged to the magnet of bipitch type, and 5 is vacuum-chamber wall, 6 for making the turning axle of magnet rotation, 7 are cathode surface discharge track, and 8 is the workpiece bias power supply, and 9 is shielding power supply, 10 is inlet mouth, 11 is vacuum orifice, and 12 is work rest, and 13 is the cooling channel.
Embodiment
By accompanying drawing preparation with sputtering source of the present invention and film coating apparatus are installed, wherein cylindric negative electrode external diameter is 64mm, long 550mm, thick 10mm, have (with identical shown in the duplex line style discharge track among the figure) duplex line style groove of closed at both ends on the cylindric matrix, the plurality of small blocks permanent magnet is arranged in the groove, wherein the magnet piece N in spiral line type groove is extremely outside, another middle S is extremely outside, with tackiness agent magnet is fixed in the groove, and the magneticstrength horizontal component that magneticstrength is controlled to be at the cathode surface place is about 300 Gausses, discharge parameter is: 300-1000V, 0.5-5A, the highest 10A, (100 ℃ of workpiece temperatures.During plated film, the workpiece after will cleaning earlier is installed on the work rest, after vacuumizing, charges into argon gas, carries out high-voltage glow-discharge, and ar atmo is ionized to argon ion, and is quickened the bombardment target by electric field, and the target atom that sputters is deposited on the plating piece surface and forms film.During sputtering source work, the uniform rotation under external force of duplex line style magnet, 2 discharges are arranged on each cross section like this, two region of discharge respectively has a little circular arc, its top horizontal tangent direction region of discharge size almost with cross section on 2 region of discharge sizableness, so guaranteed whole target surface discharge evenly, target is used fully, utilization ratio is high, and the long more utilization ratio of Style Columu Talget is high more, reaches more than 70%.Because the point of attachment at two of target can not be utilized, target is used certain thickness and also can not be re-used, if the target etching is too thin, in case penetrate, water coolant enters vacuum chamber and vacuum system meeting damage equipment, so the target among the present invention has almost reached limit utilization ratio.
Claims (2)
1, a kind of cylindrical helix magnetic control sputtering source, comprise shielding power supply, cylindrical cathode, be enclosed within shielding case, the negative electrode inner magnet of cathode end, the matrix of fixed magnets, the transmission mechanism that makes the magnet rotation and the cooling channel in the negative electrode, it is characterized in that described magnet is bifilar helix along the negative electrode axis and arranges, wherein a spiral yarn shaped magnet N is extremely outside, and an other spiral-line magnet S is extremely outside.
2, cylindrical helix magnetic control sputtering source as claimed in claim 1 is characterized in that described matrix is a column, band double spiral groove on the surface, and block magnet arrangements is in groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN94114940A CN1040236C (en) | 1994-08-18 | 1994-08-18 | Cylindrical helix magnetic control sputtering source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN94114940A CN1040236C (en) | 1994-08-18 | 1994-08-18 | Cylindrical helix magnetic control sputtering source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1117089A CN1117089A (en) | 1996-02-21 |
| CN1040236C true CN1040236C (en) | 1998-10-14 |
Family
ID=5037278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN94114940A Expired - Fee Related CN1040236C (en) | 1994-08-18 | 1994-08-18 | Cylindrical helix magnetic control sputtering source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1040236C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1053712C (en) * | 1997-04-30 | 2000-06-21 | 浙江大学 | Rotary target column type magnetic controlled sputtering device |
| CN105440013B (en) * | 2014-08-29 | 2018-10-09 | 杭州和泽医药科技有限公司 | A kind of preparation method of pomalidomide |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2075655U (en) * | 1989-09-05 | 1991-04-24 | 核工业西南物理研究院 | Double cavity rotary magnetic control splashing film plating machine |
| CN1069776A (en) * | 1991-08-21 | 1993-03-10 | 南开大学 | The method and apparatus of arc vapor-phase deposition with magnetic confinement |
| CN2196123Y (en) * | 1994-08-18 | 1995-05-03 | 马志坚 | Cylindrical magnetic control splash source |
-
1994
- 1994-08-18 CN CN94114940A patent/CN1040236C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2075655U (en) * | 1989-09-05 | 1991-04-24 | 核工业西南物理研究院 | Double cavity rotary magnetic control splashing film plating machine |
| CN1069776A (en) * | 1991-08-21 | 1993-03-10 | 南开大学 | The method and apparatus of arc vapor-phase deposition with magnetic confinement |
| CN2196123Y (en) * | 1994-08-18 | 1995-05-03 | 马志坚 | Cylindrical magnetic control splash source |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1117089A (en) | 1996-02-21 |
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Legal Events
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent for invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 07, 100027, 3, 401, Xinyuan street, Beijing, Chaoyang District Applicant after: Wang Fuzhen Address before: 100020 No. 101, west section, building 3, Kanto building, Chaoyang District, Beijing Applicant before: Ma Zhijian |
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| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: MA ZHIJIAN TO: WANG FUZHEN |
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| AR01 | Abandonment of patent right to avoid double patenting | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |