CN104022054B - Extension cavity temperature monitoring method - Google Patents

Extension cavity temperature monitoring method Download PDF

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Publication number
CN104022054B
CN104022054B CN201410253924.2A CN201410253924A CN104022054B CN 104022054 B CN104022054 B CN 104022054B CN 201410253924 A CN201410253924 A CN 201410253924A CN 104022054 B CN104022054 B CN 104022054B
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China
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epitaxial layer
extension cavity
square resistance
substrate
surface square
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CN201410253924.2A
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Chinese (zh)
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CN104022054A (en
Inventor
曹荣
史超
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上海先进半导体制造股份有限公司
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Abstract

Improve the method for extension fault by optimizing the distribution of extension cavity temperature present invention is disclosed a kind of, including:Step 1:An at least substrate is provided, there is doped chemical in the substrate;Step 2:The substrate is put into an extension cavity, grows an epitaxial layer in the substrate surface, by the activation substrate impurity that is delayed outside high growth temperature, in the growth course, the substrate does not rotate;Step 3:Detect the distribution situation of the surface square resistance of the epitaxial layer;Step 4:The profiling temperatures of the extension cavity are judged according to the distribution situation of the surface square resistance.According to the profiling temperatures of the extension cavity, the temperature in each region in the epitaxial chamber body can be obtained, so as to which temperature is adjusted respectively for each region in the epitaxial chamber body, so that the temperature in each region is consistent in the epitaxial chamber body, so as to improve the quality in the epitaxial layer of the epitaxial chamber tumor growth, the defects of improving skid wire.

Description

Extension cavity temperature monitoring method

Technical field

The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of extension cavity temperature monitoring method.

Background technology

Extension is i.e. along the technique of original one layer of silicon single crystal thin film of crystal orientation regrowth in silicon monocrystalline substrate.Silicon epitaxial wafer is The main material of semi-conductor discrete device is made, because it both can guarantee that the high-breakdown-voltage of PN junction, and can is reducing device just To pressure drop.Silicon epitaxial wafer can allow the device of bipolar circuit (IC) to be made in gently mixing on epitaxial layer for heavily doped buried regions, form growth PN junction, solve IC isolating problem, therefore it is also the main raw material(s) of IC devices.

, it is necessary to which epitaxial layer has perfect crystal structure for semiconductor devices, but in the epitaxial growth of reality During, due to the temperature distributing disproportionation in epitaxial chamber body, it can make it that there is the defects of skid wire in the epitaxial layer of growth, so as to Influence the crystal structure of epitaxial layer.For example, when the temperature distributing disproportionation in epitaxial chamber body, the lattice position of the crystal of epitaxial growth Mistake, i.e., the defects of skid wire occurs in epitaxial layer.Accordingly, it is determined that production of the temperature in each region for epitaxial wafer in epitaxial chamber body With extremely important effect, still, method is not accurately detected to monitor each region in epitaxial chamber body in the prior art Temperature.

The content of the invention

It is an object of the present invention to provide a kind of extension cavity temperature monitoring method, can accurately monitor extension cavity The temperature in interior each region.

In order to solve the above technical problems, the present invention provides a kind of extension cavity temperature monitoring method, including:

Step 1:An at least substrate is provided, there is doped chemical in the substrate;

Step 2:The substrate is put into an extension cavity, grows an epitaxial layer under the substrate surface high temperature, In the growth course, the substrate does not rotate;

Step 3:Detect the distribution situation of the surface square resistance of the epitaxial layer;

Step 4:The Temperature Distribution feelings of the extension cavity are judged according to the distribution situation of the surface square resistance Condition.

Optionally, the doped chemical is injected by the substrate using the method for ion implanting.

Optionally, the doped chemical is P elements.

Optionally, the energy of the ion implanting is 50keV~100keV, and dosage is 5 × 1012cm-2~8 × 1014cm-2

Optionally, the epitaxial layer includes some, and the extension cavity includes the multiple and position of the part one Region corresponding to one, in the step 4:

If the surface square resistance of a part for the epitaxial layer is higher than the surface square resistance of other parts It is worth, then the temperature in the region corresponding to the part is less than the temperature in other regions;

If the surface square resistance of a part for the epitaxial layer is less than the surface square resistance of other parts It is worth, then the temperature in the region corresponding to the part is higher than the temperature in other regions.

Optionally, the material of the epitaxial layer is monocrystalline silicon.

Optionally, the substrate is silicon substrate.

Optionally, in the step 3,49 points of surface square resistance is measured using the method for four probes, detects institute State the distribution situation of the surface square resistance of epitaxial layer.

Optionally,

In the step 1, there is provided two substrates, the doped chemical of two substrates are identical;

In the step 2, wherein one substrate is put into the extension cavity with first position and grows the extension Layer, another substrate is put into the extension cavity with the second place and grows the epitaxial layer;

In the step 3, the distribution situation of the surface square resistance of first epitaxial layer is detected, and detects institute State the distribution situation of the surface square resistance of the second epitaxial layer;

In the step 4, judged according to the distribution situation of the surface square resistance of the epitaxial layer of two substrates The profiling temperatures of the extension cavity.

Optionally, in the step 4:By the surface square resistance of first epitaxial layer and second extension The surface square resistance of layer is corresponding to be superimposed, and is averaged, and average surface square resistance Distribution value is obtained, according to described average Surface square resistance Distribution value, obtain the profiling temperatures of the extension cavity.

Compared with prior art, extension cavity temperature monitoring method provided by the invention has advantages below:

In extension cavity temperature monitoring method provided by the invention, including:Step 1:An at least substrate, the lining are provided There is doped chemical in bottom;Step 2:The substrate is put into an extension cavity, grows an extension in the substrate surface Layer, in the growth course, the substrate does not rotate;Step 3:Detect point of the surface square resistance of the epitaxial layer Cloth situation;Step 4:The profiling temperatures of the extension cavity are judged according to the distribution situation of the surface square resistance. Compared with prior art, according to the profiling temperatures of the extension cavity, each region in the epitaxial chamber body can be obtained Temperature, so as to which temperature is adjusted respectively for each region in the epitaxial chamber body so that the epitaxial chamber Ti Neige areas The temperature in domain is consistent, and so as to improve the quality in the epitaxial layer of the epitaxial chamber tumor growth, avoids or reduce epitaxial layer The defects of middle skid wire.

Brief description of the drawings

Fig. 1 is the flow chart of extension cavity temperature monitoring method in first embodiment of the invention;

Fig. 2-Fig. 4 is that the structure of the substrate during extension cavity temperature monitoring method in first embodiment of the invention is shown It is intended to;

Fig. 5 is the top view of first embodiment of the invention epitaxial layers;

Fig. 6 is the top view of extension cavity in first embodiment of the invention;

Fig. 7 is the schematic diagram that a substrate is put into extension cavity with first position in second embodiment of the invention;

Fig. 8 is the schematic diagram that a substrate is put into extension cavity with the second place in second embodiment of the invention.

Embodiment

The extension cavity temperature monitoring method of the present invention is described in more detail below in conjunction with schematic diagram, wherein table Showing the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change invention described herein, and still Realize the advantageous effects of the present invention.Therefore, description below is appreciated that for the widely known of those skilled in the art, and It is not intended as limitation of the present invention.

For clarity, whole features of practical embodiments are not described.In the following description, it is not described in detail known function And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments In hair, it is necessary to a large amount of implementation details are made to realize the specific objective of developer, such as according to relevant system or relevant business Limitation, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and expended Time, but it is only to those skilled in the art routine work.

More specifically description is of the invention by way of example referring to the drawings in the following passage.Will according to following explanation and right Book is sought, advantages and features of the invention will become apparent from.It should be noted that accompanying drawing is using very simplified form and using non- Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.

The core concept of the present invention is, there is provided a kind of extension cavity temperature monitoring method, including:

Step 1 S10:An at least substrate is provided, there is doped chemical in the substrate;

Step 2 S20:The substrate is put into an extension cavity, grows an extension under the substrate surface high temperature Layer, while the doped chemical of the substrate is activated, in the growth course, the substrate does not rotate;

Step 3 S30:Detect the distribution situation of the surface square resistance of the epitaxial layer;

Step 4 S40:The Temperature Distribution of the extension cavity is judged according to the distribution situation of the surface square resistance Situation.

Compared with prior art, according to the profiling temperatures of the extension cavity, can obtain in the epitaxial chamber body The temperature in each region, so as to which temperature is adjusted respectively for each region in the epitaxial chamber body so that the epitaxial chamber The temperature in internal each region is consistent, and so as to improve the quality in the epitaxial layer of the epitaxial chamber tumor growth, reaches elimination The purpose of skid wire.

Several embodiments of the extension cavity temperature monitoring method are exemplified below, with clear explanation present disclosure, It will be clear that present disclosure is not restricted to following examples, other pass through the normal of those of ordinary skill in the art The improvement of rule technological means is also within the thought range of the present invention.

First embodiment

In the present embodiment, detected using a substrate.The present invention, which is illustrated, below in conjunction with Fig. 1 provides one Kind extension cavity temperature monitoring method.

Step 1 S10 is carried out first, there is provided a substrate, there is doped chemical in the substrate., can in step 1 S10 So that the doped chemical is injected into the substrate using the method for ion implanting.

As shown in Fig. 2 first provide a substrate 100 for being free of the doped chemical, in the present embodiment, the substrate 100 For silicon substrate, certainly, the substrate 100 can also be silicon-Germanium substrate, germanium substrate etc..

Ion implanting is carried out to the substrate 100, the doped chemical is injected into the substrate 100, as shown in figure 3, Point in the substrate 100 represents the doped chemical.Preferably, the energy of the ion implanting is 50keV~100keV, example Such as 60keV, 80keV, dosage are 5 × 1012cm-2~8 × 1014cm-2, such as 7 × 1013cm-2、4×1014cm-2Etc.. Preferably, the doped chemical is P elements, P elements are easier to spread, in addition, the doped chemical can also be boron member Element or arsenic element etc..

Then, step 2 S20 is carried out, the substrate 100 is put into an extension cavity, is given birth on the surface of substrate 100 A long epitaxial layer 200, as shown in figure 4, in the growth course, more than 1100 DEG C at a temperature of, the doped chemical quilt Activation, the doped chemical are diffused into the epitaxial layer 200.The diffusion velocity of the doped chemical is relevant with temperature, temperature Higher, the diffusion velocity of the doped chemical is faster.In the present embodiment, in the growth course, the substrate 100 does not turn It is dynamic so that in the whole growth course, the substrate 100 relative to the position of the extension cavity be it is fixed, So that the temperature being subject on the substrate 100 is changeless so that the temperature of each several part is not in the epitaxial layer 200 Become.

For convenience of explanation, depicting the epitaxial layer 200 in Figure 5 includes 4 parts, still, the epitaxial layer 200 It is not limited to include 4 parts, 2 parts, 3 parts, 5 parts, 6 parts, or more can also be included.The epitaxial layer 200 wraps 4 parts 201,202,203,204 are included, as shown in fig. 6, the extension cavity 1 includes the region 11,12,13,14 of 4, it is described The position of the position in region 11,12,13,14 and the part 201,202,203,204 corresponds, and is grown when progress is described Cheng Shi, the corresponding region in each described part, for example, the epitaxial layer 200 include 4 parts 201,202,203, 204 are corresponding in turn to the part 201,202,203,204.

Preferably, the material of the epitaxial layer 200 is monocrystalline silicon, it is consistent, is advantageous to the material of the substrate 100 The diffusion of the doped chemical.

Then, step 3 S30 is carried out, detects the distribution situation of the surface square resistance of the epitaxial layer.Preferably, can To measure 49 points of surface square resistance using the method for four probes, this be it will be understood by those skilled in the art that Therefore not to repeat here.

Finally, step 4 S40 is carried out, the extension cavity is judged according to the distribution situation of the surface square resistance Profiling temperatures.If the surface square resistance of a part for the epitaxial layer is higher than the surface square of other parts Resistance value, then it is described a part corresponding to the region temperature be less than other regions temperature;If the extension The surface square resistance of a part for layer is less than the surface square resistance of other parts, then corresponding to the part The region temperature be higher than other regions temperature.

If for example, the surface square resistance of the part 201 is higher than the surface square of the part 202,203,204 Resistance value, then illustrate that the P elements in the part 201 are less than the P elements in the part 202,203,204, P elements diffusion in the part 201 is slow, and the temperature in the region 11 is less than the temperature in the region 12,13,14.

If the surface square resistance of the part 201 is less than the surface square resistance of the part 202,203,204 Value, then illustrate the P elements in the part 201 more than the P elements in the part 202,203,204, it is described P elements diffusion block in part 201, the temperature in the region 11 are higher than the temperature in the region 12,13,14.

It is thus possible to according to the profiling temperatures of the extension cavity, each region in the epitaxial chamber body can be obtained Temperature, so as to which temperature is adjusted respectively for each region in the epitaxial chamber body so that each in the epitaxial chamber body The temperature in region is consistent, so as to improve the quality in the epitaxial layer of the epitaxial chamber tumor growth.

Second embodiment

Fig. 7-Fig. 8 is referred to, illustrates the extension cavity temperature monitoring method in the present embodiment.In Fig. 7-Fig. 8, ginseng Label is examined to represent and the statement of Fig. 1-Fig. 6 identicals and first embodiment identical implication.The epitaxial chamber of the second embodiment The extension cavity temperature monitoring method of temperature monitoring method and the first embodiment is essentially identical, and its difference is:Using Two substrates are detected, because often having differences property between substrate, are detected using two substrates, To eliminate the noise of error or board, the degree of accuracy of detection is improved.

In the step 1 S10, there is provided two substrates, the doped chemical of two substrates 210,220 is identical, Doping method, dopant dose including the doped chemical etc..Although the doped chemical in the substrate 210,220 Doping method, dopant dose are identical.

In the step 2 S20, wherein one substrate is put into the growth regulation one of extension cavity 1 with first position Epitaxial layer 210, another substrate is put into the epitaxial layer 220 of extension cavity growth regulation two with the second place.

As shown in Figure 7 and Figure 8, the first position is different with the direction of the indentation (notch) of the second place, and this is ability The those of ordinary skill in domain is it should be understood that therefore not to repeat here.In the figure 7,4 parts of first epitaxial layer 210 211st, 212,213,214 the region 11,12,13,14 is corresponded to respectively.In fig. 8,4 parts of second epitaxial layer 220 223rd, 224,221,222 the region 11,12,13,14 is corresponded to respectively.

In the step 3 S30, the distribution situation of the surface square resistance of first epitaxial layer 210, example are detected Such as, the surface square resistance of the part 211,212,213,214 be respectively 2.5 Ω .cm, 2.6 Ω .cm, 2.9 Ω .cm, 3.0 Ω .cm, the surface square resistance of the part 223,224,221,222 is respectively 2.4 Ω .cm, 2.7 Ω .cm, 2.8 Ω.cm、3.1Ω.cm。

In the step 4, judged according to the distribution situation of the surface square resistance of the epitaxial layer of two substrates The profiling temperatures of the extension cavity.Preferably, by the surface square resistance of first epitaxial layer and described second The surface square resistance of epitaxial layer is corresponding to be superimposed, and is averaged, and average surface square resistance Distribution value is obtained, according to described Average surface square resistance Distribution value, obtain the profiling temperatures of the extension cavity.

In the present embodiment, because the surface square resistance of the part 211,212,213,214 is respectively 2.5 Ω .cm, 2.6 Ω .cm, 2.9 Ω .cm, 3.0 Ω .cm, the surface square resistance of the part 223,224,221,222 are respectively 2.4 Ω .cm, 2.7 Ω .cm, 2.8 Ω .cm, 3.1 Ω .cm, then the average surface square corresponding to the region 11,12,13,14 Resistance value distribution is:

(2.5Ω.cm+2.4Ω.cm)/2、(2.6Ω.cm+2.7Ω.cm)/2、(2.8Ω.cm+2.9Ω.cm)/2、 (3.0Ω.cm+3.1Ω.cm)/2

That is average surface square resistance is distributed as:2.45Ω.cm、2.65Ω.cm、2.85Ω.cm、3.05Ω.cm

Then illustrate, the temperature in the region 11,12,13,14 is successively decreased successively, so as to adjust each region accordingly Temperature.

Presently preferred embodiments of the present invention is as described above, but be not restricted to that scope disclosed above, the epitaxial chamber body temperature Degree monitoring method is not limited to the preparation for being applied to the strain-induced devices such as embedded SiGe, as long as due to the substrate out-of-flatness And post-order process (the particularly film layer of postorder) is influenceed, using the method for the oxidation-oxide layer processing, the substrate is entered Row planarizing process.

The present invention provides a kind of extension cavity temperature monitoring method, including:Step 1:An at least substrate, the lining are provided There is doped chemical in bottom;Step 2:The substrate is put into an extension cavity, grows an extension in the substrate surface Layer, in the growth course, the substrate does not rotate;Step 3:Detect point of the surface square resistance of the epitaxial layer Cloth situation;Step 4:The profiling temperatures of the extension cavity are judged according to the distribution situation of the surface square resistance. Compared with prior art, according to the profiling temperatures of the extension cavity, each region in the epitaxial chamber body can be obtained Temperature, so as to which temperature is adjusted respectively for each region in the epitaxial chamber body so that the epitaxial chamber Ti Neige areas The temperature in domain is consistent, and so as to improve the quality in the epitaxial layer of the epitaxial chamber tumor growth, avoids or reduce epitaxial layer The defects of middle skid wire.

Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies Within, then the present invention is also intended to comprising including these changes and modification.

Claims (8)

1. a kind of extension cavity temperature monitoring method, including:
Step 1:Two substrates are provided, there is identical doped chemical in described two substrates;
Step 2:Wherein one substrate is put into the epitaxial layer of extension cavity growth regulation one with first position, by another institute State substrate and the epitaxial layer of extension cavity growth regulation two is put into the second place, in the growth course, the substrate does not turn It is dynamic;
Step 3:The distribution situation of the surface square resistance of some of first epitaxial layer is detected, and described in detection The distribution situation of the surface square resistance of some of second epitaxial layer, first epitaxial layer and second epitaxial layer Including identical quantity and corresponding the multiple part;
Step 4:Sentenced according to the distribution situation of the surface square resistance of the multiple part of the epitaxial layer of two substrates The profiling temperatures of the disconnected extension cavity;
The extension cavity includes the multiple and the multiple part one-to-one region in position, in the step 4:
It is higher than the surface square resistance of other parts if a portion of surface square resistance, then a part of institute The temperature in the corresponding region is less than the temperature in other regions;
It is less than the surface square resistance of other parts if a portion of surface square resistance, then a part of institute The temperature in the corresponding region is higher than the temperature in other regions.
2. extension cavity temperature monitoring method as claimed in claim 1, it is characterised in that using the method for ion implanting by institute State doped chemical and inject described two substrates.
3. extension cavity temperature monitoring method as claimed in claim 2, it is characterised in that the doped chemical is P elements.
4. extension cavity temperature monitoring method as claimed in claim 3, it is characterised in that the energy of the ion implanting is 50keV~100keV, dosage are 5 × 1012cm-2~8 × 1014cm-2
5. extension cavity temperature monitoring method as claimed in claim 1, it is characterised in that first epitaxial layer and described The material of two epitaxial layers is monocrystalline silicon.
6. extension cavity temperature monitoring method as claimed in claim 1, it is characterised in that described two substrates are silicon substrate.
7. extension cavity temperature monitoring method as claimed in claim 1, it is characterised in that in the step 3, using four The method of probe measures 49 points of surface square resistance, detects the surface side of first epitaxial layer and second epitaxial layer The distribution situation of block resistance value.
8. the extension cavity temperature monitoring method as described in any one in claim 1-7, it is characterised in that in the step In four:The surface square resistance of the surface square resistance of first epitaxial layer and second epitaxial layer is corresponding folded Add, and average, obtain average surface square resistance Distribution value, according to the average surface square resistance Distribution value, obtain The profiling temperatures of the extension cavity.
CN201410253924.2A 2014-06-09 2014-06-09 Extension cavity temperature monitoring method CN104022054B (en)

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CN103605388A (en) * 2013-10-25 2014-02-26 上海晶盟硅材料有限公司 Method for detecting temperature of temperature field of epitaxial furnace platform through ion-implanted chip and method for correcting temperature field of epitaxial furnace platform through ion-implanted chip

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CN202076271U (en) * 2011-09-19 2011-12-14 上海晶盟硅材料有限公司 Epitaxial layer structure of back sealing monocrystalline silicon
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CN103605388A (en) * 2013-10-25 2014-02-26 上海晶盟硅材料有限公司 Method for detecting temperature of temperature field of epitaxial furnace platform through ion-implanted chip and method for correcting temperature field of epitaxial furnace platform through ion-implanted chip

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