CN104006890B - Vibration-tolerant and impact-tolerant infrared focal plane micro-bridge structure - Google Patents
Vibration-tolerant and impact-tolerant infrared focal plane micro-bridge structure Download PDFInfo
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- CN104006890B CN104006890B CN201410234896.XA CN201410234896A CN104006890B CN 104006890 B CN104006890 B CN 104006890B CN 201410234896 A CN201410234896 A CN 201410234896A CN 104006890 B CN104006890 B CN 104006890B
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- bridge
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- infrared
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Abstract
The invention discloses a vibration-tolerant and impact-tolerant infrared focal plane micro-bridge structure, and relates to the technical field of uncooled infrared focal planes. The vibration-tolerant and impact-tolerant infrared focal plane micro-bridge structure comprises an L-shaped bridge leg and a bridge surface. The L-shaped bridge leg is in etching connection with the bridge surface. The vibration-tolerant and impact-tolerant infrared focal plane micro-bridge structure further comprises a peripheral fixing frame and a connecting bridge leg located at the corner of the L-shaped bridge leg. The L-shaped bridge leg is connected with the peripheral fixing frame through the connecting bridge leg. The peripheral fixing frame and the short bridge legs are all made of insulating materials. The peripheral fixing frame is introduced in the structure, and therefore the problems that when a traditional micro-bridge structure bears external vibration and impact excitation, the overall deformation of a bridge surface of the micro-bridge structure is large and the structure is unstable are greatly solved.
Description
Technical field
The invention belongs to non-refrigerating infrared focal plane technical field, and in particular to infrared Jiao of a kind of resistance to vibrated and impact
Plane micro-bridge structure, which introduces damping and impact-reducing measure, to realize focal plane micro-bridge structure tolerance mechanics vibration and impact
Reliability design.
Background technology
Infrared detection technique has obtained widely should as the supplement to human sensory and extension, in terms of civil and military
With.The photon type Infrared Detectorss of comparative maturity have been widely applied to the fields such as communication, medical science, military affairs and industry at present,
But because its work must cryogenic cooling, cause whole system huge, complex structure and high expensive, so as to cannot be extensive
Popularization and application.The development of large scale integrated circuit technology is possibly realized the development that device is surveyed in the infrared wiping of uncooled IRFPA, non-cause at present
Cold Infrared Focal plane Array Technologies have become the most popular direction of infrared detection technique, and this technology makes us have the ability normal
Warm lower just Infrared Detectorss of the acquisition with very hypersensitivity energy, in addition, its low cost, small volume, lightweight, small power consumption and sound
Answer the advantage of wide waveband so as to which the large-scale marketization is possibly realized.
The basic functional principle of no-refrigeration infrared focal plane device is that the infra-red radiation of target object is by infrared Jiao of uncooled IRFPA
The infrared absorption layer of planar device is absorbed, and causes thermosensitive film temperature to raise from face, as thermo-responsive thin film has temperature-electricity
Resistance（TCR）Characteristic, its resistance will change, and this change is passed to reading circuit by electricity passage therein, from
And the change of the resistance value is detected, finally realize the detection to infra-red radiation.
In no-refrigeration infrared focal plane device is infrared acquisition under room temperature to be realized at all, thus its detecting structure
Design just becomes the key of whole device.Typical detecting structure a kind of for a long time is exactly to adopt micro-bridge structure.Whole microbridge
It is directly to make micro-cavity structure on the device substrate, is mainly made up of bridge pier, bridge lower limb and bridge floor, bridge pier supports bridge lower limb and bridge
Face, makes bridge lower limb and bridge floor be suspended in substrate, and deposits thermosensitive film and infrared acquisition thin film on bridge floor.So in device
Part work childhood, the change reflection of Target Infrared Radiation arrive the change of thermo-responsive film resistor, the electricity passage being produced in microbridge
This change is delivered to into rear end reading circuit and detects echo signal.
The operation principle of non-refrigerating infrared focal plane device is：Detected object infra-red radiation is by the photosensitive of focal plane device
Face is absorbed, and infrared absorption layer can cause plural layers system temperature to raise after absorbing radiation, meanwhile, transmitted infrared light can be with
Further absorbed by the thermo-responsive thin film such as non-crystalline silicon, vanadium oxide, cause the rising of photosurface temperature.Due to thermo-responsive thin film
Resistance-temperature characteristic, resistance value will occur corresponding change, read this change to realize to infra-red radiation by electrical way
Detection.
Thin-film device based on MEMS technology inevitably results from residual stress in preparation process so that preparation
Thin-film device presents certain deformation, or even flexing after sacrifice layer release.Larger stress flexing may result in device
Detection efficient reduce even failing.Additionally, one kind that vibration and impact are generally existings in real industrial activity and life swashs
Encourage, be required for emphasis to consider the impact that this mechanics excitation brings in many precision manufactureing industries, this is that device reliability sets
Meter and the original intention tested.More than any vibration and impact of device architecture tolerance, device architecture can be caused to be subject to serious
Deformation, or even destruction.Thus, in the design of focal plane device structure, it is necessary to carry out mechanics and environmental suitability reliability sets
Meter, both by the Curve guide impeller of structure itself, can reduce the impact of the mechanics excitation such as resonance and impact, while can also pass through
Device and the adaptive improvement of use environment, introduce damping and impact-reducing measure in device structure design, final to realize that Jiao is flat
Face micro-bridge structure tolerance mechanics vibration and the reliability design impacted.
The content of the invention
For above-mentioned prior art, the technical problem to be solved in the present invention be to provide it is a kind of improve infrared focus plane vibration and
The micro-bridge structure of impact property；It ensure that the compatible and efficient ir-absorbance with silicon semiconductor preparation technology, together
When enable device in resistance to vibrated, impact and the mechanical stability of device is greatly improved during other external drives.
In order to solve above-mentioned technical problem, the present invention is adopted the following technical scheme that：
The infrared focal plane micro-bridge structure of a kind of resistance to vibrated and impact, including L-type bridge lower limb and bridge floor, L-type bridge lower limb and bridge
Face etching connection, it is characterised in that also including peripheral fixed frame, positioned at the cross structure lower limb of LXing Qiao lower limbs corner, the L-type bridge
Lower limb Jing cross structures lower limb is connected with peripheral fixed frame；Peripheral fixed frame and minibridge lower limb are constituted by insulant.
In the present invention, the bridge floor is made up of compound heat sensitive film layer, and on bridge floor, center is provided with circular stress
Via.
In the present invention, the compound heat sensitive film layer includes at least thermo-responsive functional layer and infrared absorption layer, using heat
Sensitive functional material bottom set, the mode of infrared absorption layer top set are combined.
In the present invention, the INFRARED ABSORPTION layer material is TiN, Si3N4, а-C:H, SiC, SiO2 and porous silicon.
In the present invention, circular stress via diameter and picture dot size keep 1：10 ratio.
Compared with prior art, the invention has the advantages that：
First, peripheral fixed frame greatly solve traditional micro-bridge structure undergo external vibration and it is excited by impact when, microbridge
The entirety deformation of structure bridge floor is maximum, structural unstable problem so that the stability of micro-bridge structure key component is greatly enhanced, and is kept away
The stress raisers of bridge floor are exempted from；, when external vibration and high speed impact is born, stress is most of solid by periphery for micro-bridge structure
Determine frame dispersion to bear, device failure is caused so as to avoid the occurrence of large deformation and tear；In tolerance residual stress and outward
Portion vibrates and the ability of percussion is significantly improved；Under the conditions of identical pixel dimension and external drive, the present invention
Maximum displacement be reduced to original 22%, the flexing value for characterizing structure critical load improves 36%（Tensile stress）With 340%（Pressure
Stress）.
2nd, it is combined heat sensitive film layer middle position and is provided with circular stress via, circular stress via causes film preparation
During residual stress disperseed, reduce bridge floor bending deformation, moreover it is possible to so that by thin film from factors such as gravity, residual stress
Caused deformation of thin membrane degree is reduced, so that focal plane bridge deck structure is resistant to more violent vibration and impact.
3rd, using heat sensitive functional material bottom set, the mode of infrared absorption layer top set is combined, infrared absorption layer and work(
Ergosphere bump contact so that heat radiation is absorbed in a large number by infrared absorption layer, and functional layer is delivered to rapidly, transmitted radiation is passed through
Resonant, is at utmost absorbed by thermally sensitive layer, causes the change in electrical properties of functional layer material, realize that high efficiency is infrared
Detection.
4th, compound thermal sensitive thin film is rigidly connected with peripheral fixed frame, and the design of resonator cavity so that infra-red radiation quilt
It is stable, absorb efficiently and farthest, absorption efficiency can reach more than 85%, and INFRARED ABSORPTION is stable and efficiently.
Description of the drawings
Fig. 1 is traditional non-refrigerating infrared focal plane micro-bridge structure top view；
The new micro-bridge structure design drawing that Fig. 2 is provided for the present invention；
The schematic perspective view of the new micro-bridge structure that Fig. 3 is provided for the present invention；
Centroid displacement frequency figure when Fig. 4-a, Fig. 4-b are traditional, new micro-bridge structure vibratory impulse；
Fig. 5-a, Fig. 5-b are traditional, new micro-bridge structure Z-direction resonance shift deformation map；
Fig. 6-a, Fig. 6-b are the resonant stress scattergram of the Z-direction of traditional, new micro-bridge structure；
Reference is：1 is peripheral fixed frame, 2 is L-type bridge lower limb, 3 is cross structure lower limb, 4 is bridge floor.
Specific embodiment
Below in conjunction with the drawings and the specific embodiments, the invention will be further described.
The infrared focal plane micro-bridge structure of a kind of resistance to vibrated and impact, including L-type bridge lower limb and bridge floor, L-type bridge lower limb and bridge
Face etching connection, it is characterised in that also including peripheral fixed frame, positioned at the cross structure lower limb of LXing Qiao lower limbs corner, the L-type bridge
Lower limb Jing cross structures lower limb is connected with peripheral fixed frame；Peripheral fixed frame and minibridge lower limb are constituted by insulant.The fixed strip electrode in periphery
The earth solve traditional micro-bridge structure undergo external vibration and it is excited by impact when, the entirety deformation of micro-bridge structure bridge floor is maximum, knot
The unstable problem of structure so that the stability of micro-bridge structure key component is greatly enhanced, it is to avoid the stress raisers of bridge floor.
When external vibration and high speed impact is born, stress is most of to be born micro-bridge structure by the dispersion of peripheral fixed frame, so as to avoid out
Show large deformation and tear and cause device failure.
In compound heat sensitive film layer central authorities, the circular stress via of design not only can be caused residual in membrane-film preparation process
Residue stress is disperseed, and reduces bridge floor bending deformation, moreover it is possible to so that by thin film from thin film caused by the factors such as gravity, residual stress
Deformation extent is reduced, so that focal plane bridge deck structure is resistant to higher violent vibration and impact.Composite sensing film layer is extremely
Heat sensitive functional layer material and INFRARED ABSORPTION layer material is included less, using heat sensitive functional material bottom set, infrared absorption layer
The mode of top set is combined.Receive layer and functional layer bump contact so that heat radiation is absorbed in a large number by infrared absorption layer, and is passed rapidly
Functional layer is delivered to, transmitted radiation is at utmost absorbed by thermally sensitive layer, causes the electricity of functional layer material through resonant
Qualitative change, realizes high efficiency infrared acquisition.
Circular stress via diameter and picture dot size keep 1：10 ratio, under the ratio, focal plane micro-bridge structure is to monolithic
The design of Multi-View Modeling is not impacted so that structure stress distribution is most uniform, and the performance of resistance to vibrated and impact is most
It is good.
The micro-bridge structure suitable for the non-refrigerating infrared focal plane device structure design with amorphous silicon membrane as thermally sensitive layer,
INFRARED ABSORPTION layer material can be TiN, Si3N4, а-C:H, SiC, SiO2 and porous silicon etc..The structure to current research 17
～45 μm of pixel dimensions have following advantage：Structure under identical pixel dimension is compared with traditional structure, and new construction is in tensile stress
36% and 340% or so is respectively increased with single order flexing value under compressive stress.In stress distribution, traditional structure stress concentration is in bridge pier
Place and bridge lower limb bridge floor junction；New construction not only causes stress value to substantially reduce, also so that stress distribution is more uniform.It is identical
, under the compressive stress of formed objects or tensile stress effect, new construction maximum distortion is only for the new construction and traditional structure of pixel dimension
Have the 22% of traditional structure.New construction maintains compatible with MEMS technology, not only can be able to ensure that high red of focal plane device
Outer absorption efficiency, also so that the mechanical stability of micro-bridge structure is significantly improved, the reliability design to detector assembly
With important directive significance.
Embodiment one
The bridge floor is made up of compound thermal sensitive thin-film material, and the compound thermal sensitive thin-film material is including at least thermo-responsive
Functional layer material and INFRARED ABSORPTION layer material, using heat sensitive functional material bottom set, the mode of infrared absorption layer top set is multiple
Close.Infrared absorption layer and functional layer bump contact so that heat radiation is absorbed in a large number by infrared absorption layer, and it is delivered to rapidly work(
Ergosphere, transmitted radiation are at utmost absorbed by thermally sensitive layer, cause functional layer material electrical property qualitative change through resonant
Change, realize high efficiency infrared acquisition.
Embodiment two
The bridge floor also can be made up of the thermo-responsive thin film of monolayer non-crystalline silicon, and the thermo-responsive thin film of the monolayer non-crystalline silicon not only has
There is excellent ir-absorbance, while with good heat-inhibition effect, high efficiency infrared acquisition can be realized.
Claims (4)
1. infrared focal plane micro-bridge structure that is a kind of resistance to vibrated and impacting, including L type bridge lower limbs and bridge floor, L type bridge lower limbs and bridge
Face etching connection, it is characterised in that also including peripheral fixed frame, positioned at the cross structure lower limb of L Xing Qiao lower limbs corner, the L types
Bridge lower limb Jing cross structures lower limb is connected with peripheral fixed frame；Peripheral fixed frame and minibridge lower limb are constituted by insulant；The bridge floor by
Compound heat sensitive film layer is constituted, and on bridge floor, center is provided with circular stress via.
2. the infrared focal plane micro-bridge structure of resistance to vibrated according to claim 1 and impact, it is characterised in that described
Compound heat sensitive film layer includes at least thermo-responsive functional layer and infrared absorption layer, using thermo-responsive functional material bottom set, infrared suction
The mode for receiving stratification top is combined.
3. the infrared focal plane micro-bridge structure of resistance to vibrated according to claim 2 and impact, it is characterised in that described
INFRARED ABSORPTION layer material is TiN, Si3N4、а-C:H、SiC、SiO2And porous silicon.
4. the infrared focal plane micro-bridge structure of resistance to vibrated according to claim 1 and impact, it is characterised in that circular
Stress via diameter and pixel dimension keep 1：10 ratio.
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| CN106698331B (en) * | 2017-01-17 | 2018-11-02 | 中国科学院上海微系统与信息技术研究所 | A kind of infrared thermal reactor structure of the monocrystalline silicon comprising beam diaphragm structure and preparation method thereof |
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| US5962854A (en) * | 1996-06-12 | 1999-10-05 | Ishizuka Electronics Corporation | Infrared sensor and infrared detector |
| CN101498607A (en) * | 2009-03-17 | 2009-08-05 | 中国科学院微电子研究所 | Full-hollow structure light modulation thermal imaging focal plane array with silicon support frame work |
| CN103708406A (en) * | 2013-12-12 | 2014-04-09 | 中国计量学院 | Resonant type infrared detector structure capable of isolating packaging stress and manufacturing method thereof |
| CN103776546A (en) * | 2014-01-21 | 2014-05-07 | 武汉高芯科技有限公司 | Non-refrigeration infrared focal plane array detector of double-layer structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004020407A (en) * | 2002-06-18 | 2004-01-22 | Nec Corp | Manufacturing method for microbridge structured, and manufacturing method for element provided with the structure |
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Patent Citations (4)
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|---|---|---|---|---|
| US5962854A (en) * | 1996-06-12 | 1999-10-05 | Ishizuka Electronics Corporation | Infrared sensor and infrared detector |
| CN101498607A (en) * | 2009-03-17 | 2009-08-05 | 中国科学院微电子研究所 | Full-hollow structure light modulation thermal imaging focal plane array with silicon support frame work |
| CN103708406A (en) * | 2013-12-12 | 2014-04-09 | 中国计量学院 | Resonant type infrared detector structure capable of isolating packaging stress and manufacturing method thereof |
| CN103776546A (en) * | 2014-01-21 | 2014-05-07 | 武汉高芯科技有限公司 | Non-refrigeration infrared focal plane array detector of double-layer structure |
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| 何敏.非晶硅微测辐射热计振动和冲击仿真研究.《中国优秀硕士学位论文全文数据库信息科技辑》.2014,第4、7、13-14页，图2-1,2-2,2-3. * |
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