CN103996779A - Flip-chip LED device and integrated COB display module thereof - Google Patents
Flip-chip LED device and integrated COB display module thereof Download PDFInfo
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- CN103996779A CN103996779A CN201410216504.7A CN201410216504A CN103996779A CN 103996779 A CN103996779 A CN 103996779A CN 201410216504 A CN201410216504 A CN 201410216504A CN 103996779 A CN103996779 A CN 103996779A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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Abstract
The invention relates to the LED packaging technology, in particular to a flip-chip LED device and an integrated COB display module of the flip-chip LED device. The flip-chip LED device comprises an epitaxial layer. A UBM layer and a passivation layer are arranged in different areas of the upper surface of the epitaxial layer in a coating mode. A polyimide layer is deposited on the UBM layer and the passivation layer, a conductor layer is embedded in the polyimide layer, one end of the conductor layer is connected with the UBM layer, the other end is provided with a bonding pad located above the polyimide layer, and the bonding pad is connected with the other end of the conductor layer. The flip-chip LED device is applicable to packaging of BT substrates, the severe problem of CTE mismatching between the flip-chip LED device and the BT substrates can be effectively avoided, the problem that in order to avoid CTE mismatching between an LED chip and a packaging substrate, ceramic substrates must be selected in a conventional flip chip is solved, the flip-chip LED device can be combined with the BT substrates through the flip chip technology, the dot pitch of a display screen is decreased, and meanwhile production cost is greatly saved.
Description
Technical field
The present invention relates to LED encapsulation technology, more specifically, relate to one and cover brilliant LED device and integrated COB demonstration module thereof.
Background technology
LED(Light-Emitting Diode in recent years, light-emitting diode) indoor display screen development rapidly, product is day by day to point apart from, high density and the high-resolution future development such as true color.No matter it is SMDLED(Surface Mounted Devices LED that current point mounts device apart from LED display, surface labeling LED) device or COBLED(Chip On Board is LED, chip on board encapsulation LED) module, all adopt formal dress encapsulation technology.Formal dress encapsulation technology, in LED application maturation, is the main encapsulation technology of current LED types of applications.Upside-down mounting (the cover crystalline substance) encapsulation technology corresponding with positive packing technique, has the advantages such as heat-sinking capability is strong, saving encapsulated space, simplification encapsulation link and is employed and grows up gradually because of it.Flip-chip packaged technology is mainly used in LED lighting field at present.For present stage LED display Pixel Dimensions development trend develop towards miniaturization, as conventional P2.0LED display screen has appearred in existing market, for meeting the follow-up indoor demonstration market demand, display screen point will be apart from also further reducing.Practical operation is found, when display screen point is apart from being less than 2.0mm(P2.0) time, there is in process of production certain difficulty in conventional formal dress encapsulation technology, mainly because formal dress encapsulation technology needs necessary encapsulated space, point is apart from being subject to the minimum encapsulation of formal dress to allow spatial limitation, and this causes positive packing technique cannot meet more point apart from the encapsulation of display screen device.And compare positive packing technique, and flip chip technology is with the obvious advantage, and flip chip technology has the feature of vertical encapsulation, can effectively save encapsulated space, and unit are PCB flip chip technology can encapsulate/hold more LED chips than positive packing technique.So from encapsulated space angle, flip chip technology more can be realized point apart from LED display.
The feature intrinsic according to LED flip chip technology, need consider thermal coefficient of expansion (CTE) matching problem between chip and base plate for packaging more when flip-chip packaged.In the time that the CTE of both materials does not mate, in the environment colding and heat succeed each other, expand with heat and contract with cold speed and the degree varies of material cause, and problem causes encapsulating products to lose efficacy to occur material dislocation, warpage and tear etc.Consider that ceramic substrate and chip thermal coefficient of expansion (CTE) match, so the LED flip chip structure of lighting field is mainly to design for ceramic substrate at present.But ceramic substrate price is high, there is not price advantage for large-area LED display device production, and the problem such as high rigidity, fragility of pottery increase cutting difficulty, these problems have limited the application of flip chip technology in LED display field.
Summary of the invention
The present invention is at least one defect (deficiency) overcoming described in above-mentioned prior art, provide a kind of in reducing display screen point distance, can effectively reduce costs while being applied to LED display cover brilliant LED device.
The present invention also provides a kind of integrated COB of brilliant LED device that covers that can effectively reduce costs in reducing display screen point distance while being applied to LED display to show module.
For solving the problems of the technologies described above, technical scheme of the present invention is as follows:
One is covered brilliant LED device, comprise epitaxial loayer, be coated with respectively UBM layer and passivation layer in epitaxial loayer upper surface zones of different, on UBM layer and passivation layer, be respectively equipped with polyimide layer and conductor layer, wherein polyimide layer bottom surface covers passivation layer, and conductor layer is embedded in polyimide layer, and conductor layer one end is connected with UBM layer, the other end is manufactured with the pad being positioned on polyimide layer, and pad is connected with the conductor layer other end.
Compare current conventional flip LED chips, of the present inventionly cover brilliant LED device and added polyimide layer, and adopt conductor layer to connect epitaxial loayer and pad.Polyimides is organic resin, its material property is similar with BT material property, and the character such as its thermal coefficient of expansion is also similar to BT resin, so both thermal deformation speed and degree are close in the time expanding with heat and contract with cold, make of the present inventionly to cover brilliant LED device and can be applicable to BT substrate package, can effectively avoid covering CTE mismatch problem serious between brilliant LED device and BT substrate, solve that conventional flip-chip does not mate with base plate for packaging CTE for fear of LED chip and must select the difficult problem of ceramic substrate, make of the present inventionly to cover brilliant LED device and can adopt flip chip technology to be combined with BT substrate, in reducing display screen point distance, can greatly save production cost.
One is covered the integrated COB of brilliant LED device and is shown module, comprise BT substrate and by upside-down mounting mode be welded on BT substrate at least one group described above cover brilliant LED device, at least one group covers brilliant LED device and encapsulates by colloid.
Compare current conventional flip LED chips and adopt ceramic substrate, the integrated COB of brilliant LED device that covers of the present invention shows that module adopts BT substrate package, covers brilliant LED device and has added polyimide layer, and adopt conductor layer to connect epitaxial loayer and pad.Polyimides is organic resin, its material property is similar with BT material property, and the character such as its thermal coefficient of expansion is also similar to BT resin, so both thermal deformation speed and degree are close in the time expanding with heat and contract with cold, the pad that makes pad on BT substrate and cover on brilliant LED device remains static, avoid, between pad, relative motion occurs and tear pad, effectively avoid covering CTE mismatch problem serious between brilliant LED device and BT substrate, solve that conventional flip-chip does not mate with base plate for packaging CTE for fear of LED chip and must select the difficult problem of ceramic substrate, make the present invention can adopt BT substrate package to cover brilliant LED device, in reducing display screen point distance, greatly save production cost.And adopt BT substrate to replace ceramic substrate, avoid the problems such as ceramic substrate cutting difficulty, yield are low.
Brief description of the drawings
Fig. 1 is a kind of structure chart that covers brilliant LED device specific embodiment of the present invention.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 is the structural representation of conventional LED chip in prior art.
Fig. 4 is a kind of structural representation that covers pad employing salient point form in brilliant LED device specific embodiment of the present invention.
Fig. 5 is a kind of plan structure schematic diagram that covers the integrated COB demonstration of brilliant LED device module specific embodiment of the present invention.
Fig. 6 is a kind of cross section structure schematic diagram that covers the integrated COB demonstration of brilliant LED device module specific embodiment of the present invention.
Fig. 7 is the structural representation of conventional flip-chip and conventional BT substrate backflow eutectic in prior art.
Fig. 8 is the structural representation that covers brilliant LED device and BT substrate backflow eutectic in the present invention.
Fig. 9 be in the present invention return-flow structure cover the integrated COB modular structure of brilliant LED device schematic diagram.
Figure 10 be in the present invention when driving chip, electronic devices and components and drive circuit and cover brilliant LED device and be integrated on BT substrate the structural representation of BT substrate.
Figure 11 be in the present invention when driving chip, electronic devices and components, drive circuit and cover brilliant LED device and be integrated on BT substrate the structural representation of display unit.
Figure 12 is the sectional view of Figure 11.
Embodiment
Accompanying drawing, only for exemplary illustration, can not be interpreted as the restriction to this patent;
For better explanation the present embodiment, some parts of accompanying drawing have omission, zoom in or out, and do not represent the size of actual product;
To those skilled in the art, in accompanying drawing some known features and explanation thereof may to omit be understandable.
In description of the invention, it will be appreciated that, term " on ", orientation or the position relationship of the instruction such as " one end ", " other end " be based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, construct and operation with specific orientation, therefore can not be interpreted as limitation of the present invention.In addition, term " first ", " second " be only for describing object, and can not be interpreted as the quantity of instruction or hint relative importance or implicit indicated technical characterictic.Thus, one or more these features can be expressed or impliedly be comprised to the feature of " first " of restriction, " second ".In description of the invention, except as otherwise noted, the implication of " multiple " is two or more.
In description of the invention, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " connection " should be interpreted broadly, and for example, can be to be fixedly connected with, and can be also to removably connect, or connect integratedly; Can be mechanical connection, can be also electrical connection; Can be to be directly connected, can be also indirectly to connect by intermediary, can say the connection of two element internals.For the ordinary skill in the art, can concrete condition understand above-mentioned term at concrete meaning of the present invention.
Below in conjunction with drawings and Examples, technical scheme of the present invention is described further.
Embodiment 1
As illustrated in fig. 1 and 2, cover the structure chart of brilliant LED device specific embodiment for the present invention is a kind of.Referring to Fig. 1, the one of this specific embodiment is covered brilliant LED device and is comprised epitaxial loayer 11, metal layer under UBM(Under Bump Metallization salient point) layer 12, passivation layer 13, conductor layer 14, polyimide layer 15 and pad 16, UBM layer 12 and passivation layer 13 are plated in respectively epitaxial loayer 11 upper surface zoness of different, on UBM layer 12 and passivation layer 13, establish respectively polyimide layer 15 and conductor layer 14, wherein polyimide layer 15 bottom surfaces cover passivation layer 13, conductor layer 14 is embedded in polyimide layer 15, conductor layer 14 one end are connected with UBM layer 12, the other end is made pad 16, pad 16 is positioned on polyimide layer 15 and with conductor layer 14 other ends and is connected, this pad 16 is as external electrical connection electrode.
The brilliant LED device that covers of this specific embodiment is on the basis of current conventional flip LED chips, carry out process innovation, the concrete steps of this specific embodiment chips epitaxial wafer are identical with conventional LED chip extension making, obtaining after LED chip epitaxial wafer, carry out chip electrode making.As shown in Figure 3, when conventional chip electrode is made, directly on epitaxial wafer 31, make UBM layer 32, then directly on UBM layer 32, make pad 33, its concrete electrode fabrication flow process is made flow process with reference to conventional chip electrode.And in this specific embodiment, make while covering brilliant LED device, on the epitaxial loayer 11 forming, be typically provided with two epitaxial loayer pads, be respectively positive and negative electrode pad, UBM layer 12 covers on positive and negative electrode pad, and epitaxial loayer upper surface other regions except positive and negative electrode pad region form passivation layer.Cover brilliant LED device in the time making electrode, as shown in Figure 1, complete after epitaxial wafer making at surface deposition one deck polyimides (PI) layer 15, this polyimide layer 15 does not now cover UBM layer 12, then on polyimide layer 15, make and be used for connecting the UBM layer 12 of epitaxial wafer and the conductor layer 14 of pad 16, complete after conductor layer 14, again in another strata imide layer 15 of surface deposition, now conductor layer 14 other ends are not covered by polyimide layer 15, finally make pad 16 at conductor layer 14 ends, final acquisition covered brilliant LED device.Wherein, this covers the material that brilliant LED device glow color depends on epitaxial loayer 11, and remaining electrode preparation flow technique is identical with conventional LED chip.In this process, when the effect of UBM layer 12 mainly prevents that conductor layer 14 materials are connected with epitaxial loayer pad, mutual material interpenetrates and special making.Passivation layer 13 effect be realize the resistance on epitaxial loayer 11 surfaces every, prevent that other conductive materials such as epitaxial loayer 11 and electrode are short-circuited.
The brilliant LED device that covers of this specific embodiment is compared conventional flip LED chips, has added polyimide layer 15, and adopts conductor layer 14 to connect epitaxial loayer 11 and pad 16.Because polyimides is organic resin, its material property is similar with BT material property, and the character such as its thermal coefficient of expansion is also similar to BT resin, so both thermal deformation speed and degree are close in the time expanding with heat and contract with cold, therefore, add the brilliant LED device of covering of polyimide layer 15 to be applicable to common substrate, as BT substrate, the problem that does not exist BT substrate and chip bonding pad thermal coefficient of expansion not to mate when encapsulation to cause packaging to lose efficacy, be applicable to adopt flip chip technology to combine with BT substrate, be used for point apart from LED display, in reducing display screen point distance, can avoid adopting expensive ceramic substrate, thereby saving product cost.
In specific implementation process, the thickness of polyimide layer 15 is according to the chip area design of covering brilliant LED device.
In specific implementation process, for ensureing that the pad 16 covering on brilliant LED device remains and mates with the pad on BT substrate, conventionally require to connect UBM layer 14 in device and there is good ductility and plasticity with the conductor layer 14 of pad 16, and for reaching better heat-sinking capability, conductor layer 14 areas are large as far as possible, preferably the area coverage of conductor layer 14 is greater than 1/2 active light-emitting area, and conductor layer 14 thickness are decided to be 10um-100um conventionally according to technique.One preferred embodiment in, in order to meet conductivity, ductility and the heat-sinking capability of conductor layer 14, in this specific embodiment, conductor layer 14 is conventionally selected and is adopted metal level to realize, and is preferably gold layer.
Embodiment 2
On the basis of embodiment 1, the different process requirement when meeting actual production, can be designed to salient point form by the pad 16 that covers brilliant LED device of the present invention, as shown in Figure 4, salient point 41 materials comprise simple metal and alloy, and simple metal is as au bump, and alloy is as SAC alloy.Wherein the brilliant LED device that covers of au bump formula is applicable to ultrasonic thermocompression welding conventionally, and the brilliant LED device that covers of SAC alloy button type is applicable to reflow soldering conventionally.
Embodiment 3
On the basis of embodiment 1 or embodiment 2, the present invention also provides one to cover the integrated COB demonstration of brilliant LED device module.As illustrated in Figures 5 and 6, the present invention is a kind of to be covered the integrated COB of brilliant LED device and shows that module specific embodiment comprises BT substrate 52 and is welded on the brilliant LED device 51 that covers described at least one group of embodiment 1 on BT substrate 52 or embodiment 2 by upside-down mounting mode, and at least one group covers brilliant LED device 51 and encapsulate by colloid 53.
Concrete manufacturing process is to adopt flip chip technology to complete to cover the welding of brilliant LED device 51 on BT substrate 52, then adopt the modes such as the backflow of salient point eutectic or salient point ultrasonic thermocompression or Sn/Au eutectic, complete after chips welding, carry out sealing, colloid is dried, the COB that cuts into different size size by demand shows module, and final acquisition covered the integrated COB demonstration module of brilliant LED device.
This specific embodiment adopts flip chip technology will cover brilliant LED device 51 and is welded on BT substrate 52, because covering, this in brilliant LED device 51, adds the thermal coefficient of expansion polyimide layer similar to the thermal coefficient of expansion of BT baseplate material, make the flip bonded of covering brilliant LED device 51 and BT substrate 52 can effectively avoid CTE mismatch problem serious between chip and BT substrate 52, solve that conventional flip-chip does not mate with base plate for packaging CTE for fear of chip and must adopt the difficult problem of ceramic substrate, effectively reduce production cost, and adopt flip chip technology can meet the encapsulation of extra small point apart from display screen.In addition, the conventional ceramic substrate adopting is due to the hard crisp characteristic of pottery, the easy cracked yield that affects in cutting, and large to cutting device loss, and this specific embodiment adopts common BT substrate 52 to replace ceramic substrate, avoided ceramic substrate cutting difficulty, yield low, to problems such as cutting device loss are large.The brilliant LED device that covers of this specific embodiment combines with BT substrate, makes flip chip technology more wide in the application prospect of display screen, and the excellent heat-transfer capability of flip chip technology also will further be improved the heat dispersion that shows product.
Below in conjunction with concrete test case, the performance of the integrated COB demonstration of the brilliant LED device of covering of this specific embodiment module is tested, specific as follows:
When this example, by conventional flip-chip and conventional BT substrate backflow eutectic, specifically as shown in Figure 7, conventional flip-chip is 71, and conventional BT substrate is 72, and backflow eutectic point is made as 310 DEG C.In this example, conventional flip-chip 71 is of a size of 240um*320um, and chip bonding pad material adopts AuSn alloy, and conventional BT substrate 72 is of a size of 126cm*56cm, and conventional BT substrate 72 models are HL832NS.This example carries out X-Ray test, thrust test and cold shock testing to sample after completing backflow eutectic.Adopt ANSYS finite element software to carry out thermal stress simulation analysis chip pad, BT substrate 72 pads and BT substrate 72 to contact the thermal deformation of transitional region.Before test, estimate sample, BT substrate 72 warpage degrees are larger, sample is carried out to X-Ray test and find that the voidage of pad is higher, and find more large area cavity, sample is carried out to thrust test (correct tension value >5KG), record test data.After completing sample and testing first, sample is carried out to cold shock testing, test environment conditions is-40 DEG C-100 DEG C, sample is carried out to X-Ray test completing after test, find that crack and displacement phenomenon appear in the most of conventional flip-chip 71 of sample and the pad place on BT substrate 72, it is carried out to push-pull effort test, find that sample thrust magnitude declines.Think that this is mainly because chip material and BT substrate 72 exist very large thermal coefficient of expansion (CTE) difference, make sample in the time that hot-cool environment replaces chip and BT substrate 72 thermal deformation values (shrink/expanded) inconsistent, cause chip bonding pad and the 72 pad generation relative motions of BT substrate, in the time of the relative motion displacement value of overstepping the extreme limit, conventional flip-chip 71 is torn with BT substrate 72 welds, show as sample weld and occur crack, cause chip displacement simultaneously.In addition, at eutectic backflow temperature-fall period, because conventional flip-chip 71 is inconsistent with BT substrate 72 contraction rates, affect AuSn eutectic and form, finally occur large area cavity.
Contact the thermal deformation situation of transition region with BT substrate 72 pads for further understanding conventional flip-chip 71, this example adopts ANSYS software to simulate instance model, simulation finds that pad, the pad of BT substrate 72 and the thermal deformation amount of BT substrate 72 transitional regions of conventional flip-chip 71 exceed reasonable value, thermal deformation is about 8%, directly causes junction problems of crack.Based on experimental test data and analogue data, this example is further by the above-mentioned conventional flip-chip of brilliant LED chip replacement that covers of the present invention, and substrate is above-mentioned identical BT substrate, and as shown in Figure 8, covering brilliant LED chip is that 81, BT substrate is 82.The polyimides layer thickness covering in this example in brilliant LED device 81 is made as 50um, conductor layer material properties is the gold of ductility and plasticity excellence, the pad material covering on brilliant LED chip 81 and BT substrate 82 is AuSn alloy, brilliant LED device 81 backflow eutectic processes are covered in simulation, and its simulated environment is in strict accordance with above-mentioned experimental condition setting.Analog result is found, covers the thermal deformation value of brilliant LED device 81 and BT substrate 82 backflow eutectic sample chips pads, BT pad and BT substrate 82 transitional regions in normal range (NR).This is mainly to add polyimide layer because cover between brilliant LED device 81 and pad, and the material property of polyimides is similar to BT material property, both CTE also approach, so both thermal deformations (expansion/contraction) speed and degree are close in the time expanding with heat and contract with cold, the pad that makes pad on BT substrate 82 and cover brilliant LED device 81 remains static, avoids, between pad, relative motion occurs and tears pad.In addition, adopt thermal simulation software FloEFD to covering brilliant LED device 81 working heat sunykatuib analyses, analog result finds that this structure compares packed LED chip and have better heat-sinking capability.
In another one test case, adopt salient point form when covering pad in brilliant LED device, then adopt ANSYS finite element software and thermal simulation software FloEFD respectively to covering brilliant LED device (as shown in Figure 4) and covering brilliant LED device and BT substrate welding process is carried out the simulation of thermal deformation and heat-transfer capability, wherein, as shown in Figure 9, for the integrated COB modular structure of the brilliant LED device of covering of return-flow structure schematic diagram, wherein 91 for covering brilliant LED device, and 92 is BT substrate.This test case finds that the analog result difference of two kinds of structures is less, its thermal deformation value is to cover brilliant LED device architecture in embodiment 1 similar, complete after chip PCBA, when the highest loading of chip with au bump, working temperature is about 41 DEG C, AuSn pad chip temperature is about 43 DEG C, and heat-sinking capability is that au bump heat-sinking capability is better than AuSn pad and SAC alloy bump structure.This is mainly because this thermal expansion matching of covering brilliant LED device and BT substrate depends primarily on the thermal expansion matching of polyimide layer and the BT substrate of chip, and salient point and pad material are less on thermal deformation impact.Of the present inventionly cover brilliant LED device and meet different reverse installation process demands.
In another one test case, design small size RGB covers brilliant LED device, and size is 7mil*8mil, and chip structure is identical with the flip chip structure of embodiment 1, and adjusting polyimides layer thickness according to chip area is 10um-20um., then this RGB being covered to brilliant LED device and mount into COB module as shown in Figure 5, this module is applicable to point apart from full-color LED display screen.Concrete steps: design BT substrate, pel spacing P is that mono-group of RGB of 1.0mm(is a pixel); BT substrate point scaling powder; Die bond; Reflux; Sealing, adopts the sealing of molding technique; Colloid is dried; Cutting, according to the COB module of product performance cutting different size size; Mount LED display unit (paster technique is consistent with conventional SMD device paster flow process).Adopt ANSYS software and FloEFD software, respectively COB module is carried out to thermal deformation sunykatuib analysis and analysis of Heat Transfer.Set up same specification COB module model (the conventional formal dress chip package P1.0 demonstration module of conventional flip-chip and formal dress chip package simultaneously, very difficult in practical operation, in the present embodiment, module is software model, and patent flip chip structure also can further reduce inter-chip pitch/demonstration module point distance), form contrast experiment with the COB module of flip chip structure.Analog result discovery, the COB module thermal deformation of flip chip structure of the present invention is little, and thermal deformation is in normal deformation range, and conventional inverted structure COB module thermal deformation is bigger than normal, and deformation values goes beyond the limit of; When normal work, flip chip structure COB module heat-sinking capability is stronger than conventional formal dress chip structure COB module heat-sinking capability, and maximum temperature differs and is about 10 DEG C.In order further to study the optical property of COB, the present embodiment adopts optical simulation software Tracepro to carry out optical analog to this COB module, and contrast with the COB module of conventional formal dress chip package, analog result discovery, this COB module characteristics of luminescence is close with the conventional formal dress COB module characteristics of luminescence.So the integrated COB of brilliant LED device that covers of the present invention shows that module is more excellent at the aspect such as practical operation and properties of product apart from display screen field at point.
Embodiment 4
On the basis of embodiment 3, in order further to simplify encapsulation flow process, the present invention also further designs BT substrate, and driving chip, associated electrical components and parts and drive circuit are integrated on BT substrate, as shown in Figure 10-12,101 is pcb board, 102 for showing the required electronic devices and components of the normal work of module, realizes BT chip package base plate and display screen support plate integrated, omitted follow-up paster step with this, simplify encapsulation flow process, enhance productivity.In its concrete steps and embodiment 3, COB module making flow process is similar: BT substrate design (containing driving chip, associated electrical components and parts, drive circuit); Point scaling powder; Die bond; Reflux; Sealing; Colloid is dried; Obtain display screen unit, as figure.In this flow process, omit and mounted and possible cutting link, further simplified encapsulation flow process, promoted packaging efficiency, realized in a sense " without encapsulation " LED technology in the market.
Above-mentioned testing authentication brilliant LED device and the BT substrate of covering of the present invention in conjunction with being applied in point on display screen, realizing point apart from the cost that reduced product in display screen, be more suitable for promoting the use of.
The corresponding same or analogous parts of same or analogous label;
In accompanying drawing, describe position relationship for only for exemplary illustration, can not be interpreted as the restriction to this patent;
Obviously, the above embodiment of the present invention is only for example of the present invention is clearly described, and is not the restriction to embodiments of the present invention.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also giving exhaustive to all execution modes.All any amendments of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in the protection range of the claims in the present invention.
Claims (8)
1. one kind covers brilliant LED device, it is characterized in that, comprise epitaxial loayer, be coated with respectively UBM layer and passivation layer in epitaxial loayer upper surface zones of different, be respectively equipped with polyimide layer and conductor layer on UBM layer and passivation layer, wherein polyimide layer bottom surface covers passivation layer, conductor layer is embedded in polyimide layer, conductor layer one end is connected with UBM layer, and the other end is manufactured with the pad being positioned on polyimide layer, and pad is connected with the conductor layer other end.
2. according to claim 1ly cover brilliant LED device, it is characterized in that, the thickness of described conductor layer is 10um-100um.
3. according to claim 1ly cover brilliant LED device, it is characterized in that, described conductor layer is metal level.
4. according to claim 3ly cover brilliant LED device, it is characterized in that, described metal level is gold layer.
5. according to claim 1ly cover brilliant LED device, it is characterized in that, described pad is salient point.
6. according to claim 5ly cover brilliant LED device, it is characterized in that, the material of described salient point is metal or alloy.
7. one kind covers the integrated COB demonstration of brilliant LED device module, it is characterized in that, comprise BT substrate and be welded on the brilliant LED device that covers described at least one group of claim 1-6 any one on BT substrate by upside-down mounting mode, at least one group covers brilliant LED device and encapsulates by colloid.
8. the integrated COB of brilliant LED device that covers according to claim 7 shows module, it is characterized in that, on described BT substrate, is also packaged with driving chip.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111063676A (en) * | 2019-12-06 | 2020-04-24 | 深圳市强生光电科技有限公司 | LED infrared lamp panel for physiotherapy instrument and preparation process thereof |
| CN113885211A (en) * | 2021-11-09 | 2022-01-04 | 康佳集团股份有限公司 | Display screen, preparation method of display screen and head-mounted device |
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