CN103996650B - Photoetching and the method in etch lead hole - Google Patents
Photoetching and the method in etch lead hole Download PDFInfo
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- CN103996650B CN103996650B CN201310051876.4A CN201310051876A CN103996650B CN 103996650 B CN103996650 B CN 103996650B CN 201310051876 A CN201310051876 A CN 201310051876A CN 103996650 B CN103996650 B CN 103996650B
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- photoetching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Abstract
The invention discloses a kind of photoetching and the method in etch lead hole, comprise the following steps：Aluminium wiring is formed on wafer, aluminium wiring includes aluminium lamination and the protective layer positioned at aluminium lamination upper surface；Dielectric passivation is deposited in aluminium wiring and form passivation layer, and carry out photoetching；Corrosion is passivated, the protective layer at fairlead is partly or entirely remaining in corrosion is passivated；Polyimides is coated with crystal column surface；In polyimide surface coating photoresist and carry out exposed and developed；Corrosion is passivated again, until protective layer is removed completely；Cure polyimide.The present invention is in the first time passivation corrosion step after depositing dielectric passivation; remain the protective layer above aluminium lamination at fairlead; so that aluminium lamination developed liquid will not be corroded in polyimides lithography step; if and discovery needs to carry out doing over again for polyimides after the completion of polyimides photoetching; the protective layer for then retaining can also be protected when doing over again to aluminium lamination, therefore can realize that the online of process for photoetching polyimide is done over again.
Description
Technical field
The present invention relates to the manufacture method of semiconductor devices, the method in more particularly to a kind of photoetching and etch lead hole.
Background technology
Final step photoetching process is usually polyimides in process for fabrication of semiconductor device（Polyimide,PI）Photoetching,
Its final result is that device only fairlead exposes, and for subsequently carrying out the bonding of gold thread or sial line, other regions are passivated
Medium and polyimides covering protection.Fairlead substantially be exactly device top layer aluminium wiring, passivation corrode after fine aluminium it is exposed
Outward.
A kind of traditional photoetching and the technique in etch lead hole are as shown in figure 1, wherein dielectric passivation photoetching and passivation is corroded
Purpose be to fall the dielectric corrosion above aluminium lamination in fairlead.The wiring of semiconductor aluminium is usually by titanium nitride+aluminium+titanium nitride
Three-decker is constituted, in ensureing follow-up encapsulation bonding technology, lead material（Generally gold thread or sial line）In fairlead
The bonding of aluminium, the titanium nitride on aluminium wiring upper strata needs to be corroded, i.e., aluminium is exposed after corrosion is passivated.
In photoresist developing, developer solution can in the lump remove polyimides the polyimides of non-photo-sensing type.But due to
Developer solution is that the aluminium at alkaline solution, therefore fairlead easily reacts with developer solution, causes the aluminium at fairlead in polyimides
Technique terminates rear thinning, in order to thoroughly remove polyimides in developing process, can use prolonged developing process, therefore aluminium
The thickness of layer loss is larger, influences follow-up wire bonding.
In addition, process for photoetching polyimide is due to equipment fault or in line defect etc., it may be desirable to done over again, weight after doing over again
Newly carry out the coating of polyimides and photoresist, and carry out the aluminium at exposure imaging, therefore fairlead can developed corrosion two
It is secondary, cause the developed corrosion of a big chunk aluminium lamination to fall.
Traditional solution, one is the thickness for increasing aluminium lamination, but this can cause the Quality Down of corresponding photoetching process；Separately
One kind is optimization developing programs, reduces developing time, but potential risk is the residual of polyimides in fairlead.
The content of the invention
Based on this, in order to the developed corrosion of aluminium lamination obtains excessively thin in solving the problems, such as fairlead photoetching process, it is necessary to carry
For a kind of photoetching and the method in etch lead hole.
A kind of photoetching and the method in etch lead hole, comprise the following steps：Aluminium wiring, the aluminium wiring are formed on wafer
Including aluminium lamination and the protective layer positioned at the aluminium lamination upper surface；Dielectric passivation is deposited in aluminium wiring and forms passivation layer, and
Carry out photoetching；Corrosion is passivated, the protective layer at fairlead is partly or entirely remaining in corrosion is passivated；Described
Crystal column surface is coated with polyimides；In the polyimide surface coating photoresist and carry out exposed and developed；Carry out again blunt
Change corrosion, until the protective layer is removed completely；Solidify the polyimides.
Wherein in one embodiment, it is described the step of be passivated corrosion in, the passivation layer quilt at fairlead
All corrosion, the etching extent of the protective layer is 100 angstroms.
Wherein in one embodiment, it is described the step of be passivated corrosion in, the passivation layer still it is remaining have 100 to
500 angstroms.
Wherein in one embodiment, it is described the aluminium wiring on deposit dielectric passivation formed passivation layer the step of in,
The material of the passivation layer is silica or silicon nitride.
Wherein in one embodiment, described aluminium to be formed on wafer the step of connect up, the thickness of the protective layer is
350 angstroms to 600 angstroms.
There is a need to a kind of photoetching that production line still unstable suitable for polyimide curing technique is provided and etching is drawn
The method of string holes.
A kind of photoetching and the method in etch lead hole, comprise the following steps：Aluminium wiring, the aluminium wiring are formed on wafer
Including aluminium lamination and the protective layer positioned at the aluminium lamination upper surface；Dielectric passivation is deposited in aluminium wiring and forms passivation layer, and
Carry out photoetching；Corrosion is passivated, the protective layer at fairlead is partly or entirely remaining in corrosion is passivated；Described
Crystal column surface is coated with polyimides；In the polyimide surface coating photoresist and carry out exposed and developed；Solidification is described poly-
Acid imide；Corrosion is passivated again, until the protective layer is removed completely.
Wherein in one embodiment, it is described the step of be passivated corrosion in, the passivation layer quilt at fairlead
All corrosion, the etching extent of the protective layer is 100 angstroms.
Wherein in one embodiment, it is described the step of be passivated corrosion in, the passivation layer is still remaining to have 100 angstroms extremely
500 angstroms.
Wherein in one embodiment, it is described the aluminium wiring on deposit dielectric passivation formed passivation layer the step of in,
The material of the passivation layer is silica or silicon nitride.
Wherein in one embodiment, described aluminium to be formed on wafer the step of connect up, the thickness of the protective layer is
350 angstroms to 600 angstroms.
Above two photoetching and the method in etch lead hole, the first time after dielectric passivation is deposited are passivated corrosion step
In, remain the protective layer above aluminium lamination at fairlead so that the aluminium lamination at fairlead will not be in polyimides lithography step
Developed liquid is corroded, and if finding to need to carry out doing over again for polyimides after the completion of polyimides photoetching, the protection for retaining
Layer can also be protected when doing over again to aluminium lamination, therefore the developed corrosion of aluminium lamination is obtained in efficiently solving fairlead photoetching process
Excessively thin problem, it is possible to achieve the online of process for photoetching polyimide is done over again.And the method is wanted to polyimides developing programs without special
Ask, increasing developing time will not cause the problem of fairlead aluminium lamination excessive erosion, developing time is for example too short to cause the fairlead to have on a small quantity
Polyimides is remained, then can be first passed through dry etching and remove polyimides residual before corrosion is passivated, and is then carried out again
Passivation corrosion.
Brief description of the drawings
Fig. 1 is the flow chart of a kind of traditional photoetching and etch lead hole technique；
Fig. 2 is the flow chart of the method in photoetching and etch lead hole in embodiment 1；
Fig. 3 is the generalized section of device before carrying out photoetching after deposit forms passivation layer in an embodiment；
Fig. 4 is that the passivation layer at fairlead is only corroded in the embodiment of a part, and passivation is etched and removes photoetching
The generalized section of device after glue；
During Fig. 5 is the embodiment that the passivation layer at fairlead is all corroded, after passivation is etched and removes photoresist
The generalized section of device；
Fig. 6 is the flow chart of the method in photoetching and etch lead hole in embodiment 2.
Specific embodiment
It is understandable to enable objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to tool of the invention
Body implementation method is described in detail.
Embodiment 1：
Fig. 2 is the flow chart of the method in photoetching and etch lead hole in embodiment 1, is comprised the following steps：
S11, forms aluminium wiring on wafer.
Aluminium wiring includes aluminium lamination and the protective layer positioned at aluminium lamination upper surface.In the present embodiment, aluminium wiring is titanium nitride+aluminium
The three-decker of+titanium nitride.
S12, deposits dielectric passivation formation passivation layer, and carry out photoetching in aluminium wiring.
Fig. 3 is the generalized section of device before carrying out photoetching, including aluminium lamination 130, aluminium after deposit forms passivation layer 110
The protective layer 120 and the passivation layer 110 on the surface of protective layer 120 on 130 surface of layer.Passivation layer 110 makes by lithography after the completion of depositing and draws
String holes figure.Notice that the structure of the lower section of aluminium lamination 130 in figure is omitted.
S13, is passivated corrosion.
By the degree of control corrosion rate so that the medium of the top of aluminium lamination 130 is by partial corrosion, fairlead at fairlead
The protective layer 120 at place is partly or entirely remaining in corrosion is passivated.In the present embodiment, a part of passivation layer 110 is only corroded, its
Remaining passivation layer 110 is retained（Protective layer 120 under such case passivation layer 110 is all retained）.Light is removed after corroding
Photoresist.Fig. 4 is the generalized section for etching and removing device after photoresist, and Fig. 4 show the passivation layer 110 at fairlead
The embodiment for the part that has only been corroded.
The dielectric passivation of passivation layer 110 can select silica or silicon nitride.In the present embodiment, it is blunt after passivation corrosion
Change layer 110 to retain
S14, polyimides is coated with crystal column surface.
Polyimides is a kind of high temperature resistant, wear-resistant and erosion-resisting synthetic polymerized resin, is mainly used as electronic component
Clad can or overlay film, to improve the stability of product.
S15, in polyimide surface coating photoresist and is carried out exposed and developed.
The developed liquid removal of photoresist and polyimides at fairlead.
S16, is passivated corrosion again, until the protective layer that aluminium is connected up is removed completely.
If remaining portion of the passivating layer 110 in step S13, then by the passivation layer 110 at fairlead and guarantor in this step
Sheath 120 is all eroded；It is in this step that the protective layer 120 at fairlead is complete if only remaining partial protection layer 120
Portion erodes.
In checking whether the photoetching of polyimides has exception after step S15 polyamides can be carried out if exception is detected
The treatment of doing over again of imines, step S16 is performed Ru without exception again.
In step S16 passivation corrosion be with step S15 development after photoresist as mask is corroded.
S17, cure polyimide.
Photoresist is first removed before solidification.
Above-mentioned photoetching and the method in etch lead hole, the first time after dielectric passivation is deposited are passivated corrosion step (S13)
In, remain the protective layer above aluminium lamination at fairlead so that the aluminium lamination at fairlead will not be in polyimides lithography step
Developed liquid is corroded, and if finding to need to carry out doing over again for polyimides after the completion of polyimides photoetching, the protection for retaining
Layer can also be protected when doing over again to aluminium lamination, therefore can realize that the online of process for photoetching polyimide is done over again.And the method is to poly-
Without particular/special requirement, increasing developing time will not cause the problem of fairlead aluminium lamination excessive erosion, developing time to acid imide developing programs
Cause the fairlead to there is a small amount of polyimides to remain as too short, then can first pass through dry method before the corrosion of the passivation in step S16
Etching removes polyimides residual, and corrosion is then passivated again.
Embodiment 2：
Fig. 6 is the flow chart of the method in photoetching and etch lead hole in embodiment 2, is comprised the following steps：
S21, forms aluminium wiring on wafer.
Aluminium wiring includes aluminium lamination and the protective layer positioned at aluminium lamination upper surface.In the present embodiment, aluminium wiring is titanium nitride+aluminium
The three-decker of+titanium nitride.
S22, deposits dielectric passivation formation passivation layer, and carry out photoetching in aluminium wiring.
Fig. 3 is the generalized section of device before carrying out photoetching, including aluminium lamination 130, aluminium after deposit forms passivation layer 110
The protective layer 120 and the passivation layer 110 on the surface of protective layer 120 on 130 surface of layer.Passivation layer 110 makes by lithography after the completion of depositing and draws
String holes figure.Notice that the structure of the lower section of aluminium lamination 130 in figure is omitted.
S23, is passivated corrosion.
By the degree of control corrosion rate so that the medium of the top of aluminium lamination 130 is by partial corrosion, fairlead at fairlead
The protective layer 120 at place is partly or entirely remaining in corrosion is passivated.In the present embodiment, the passivation layer 110 at fairlead is complete
Portion corrodes, but 120 corrosion parts of protective layer.Photoresist is removed after corroding.Fig. 5 is after etching and removing photoresist
The generalized section of device, the passivation layer 110 that Fig. 5 show at fairlead is all corroded, and protective layer 120 has only been corroded one
Partial embodiment.
The dielectric passivation of passivation layer 110 can select silica or silicon nitride.In the present embodiment, protective layer 120
Thickness isPassivation corrosion all erodes the passivation layer 110 at fairlead, and by protective layer 120（Material
Matter is titanium nitride）Erode 100 angstroms.
S24, polyimides is coated with crystal column surface.
S25, in polyimide surface coating photoresist and is carried out exposed and developed.
The developed liquid removal of photoresist and polyimides at fairlead.
S26, cure polyimide.
Photoresist is first removed before solidification.
S27, is passivated corrosion again, until the protective layer that aluminium is connected up is removed completely.
If remaining portion of the passivating layer 110 in step S23, then by the passivation layer 110 at fairlead and guarantor in this step
Sheath 120 is all eroded；It is in this step that the protective layer 120 at fairlead is complete if only remaining partial protection layer 120
Portion erodes.
Embodiment 2 is applied to the still unstable production line of polyimide curing technique, can be after the completion of step S26 to solid
The polyimides of change is checked that carry out the passivation corrosion of step S27 after solidification inspection is without exception again, passivation corrodes to solidify
Polyimides is mask, it is not necessary to coating photoresist.
Embodiment described above only expresses several embodiments of the invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Shield scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (4)
1. a kind of method in photoetching and etch lead hole, comprises the following steps：
Aluminium wiring is formed on wafer, the aluminium wiring includes aluminium lamination and the protective layer positioned at the aluminium lamination upper surface；
Dielectric passivation is deposited in aluminium wiring and form passivation layer, and carry out photoetching；
Corrosion is passivated, it is complete in corrosion is passivated that the passivation layer at fairlead only corrodes a part of, described protective layer
Portion is remaining；
Polyimides is coated with the crystal column surface；
In the polyimide surface coating photoresist and carry out exposed and developed；
Whether check the photoetching of polyimides has exception, if detect it is abnormal if carry out the treatment of doing over again of polyimides, such as without
It is abnormal to perform next step again；
Polyimides is removed by dry etching to remain；
Corrosion is passivated again；Corrosion is passivated by mask of the photoresist after development, until the protective layer is complete
Removal；
Solidify the polyimides.
2. the method in photoetching according to claim 1 and etch lead hole, it is characterised in that described to be passivated corrosion
In step, the passivation layer is still remaining 100 angstroms to 500 angstroms.
3. the method in photoetching according to claim 1 and etch lead hole, it is characterised in that described in aluminium wiring
In the step of deposit dielectric passivation forms passivation layer, the material of the passivation layer is silica or silicon nitride.
4. the method in the photoetching according to any one in claim 1-3 and etch lead hole, it is characterised in that it is described
In being formed on wafer the step of aluminium is connected up, the thickness of the protective layer is 350 angstroms to 600 angstroms.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310051876.4A CN103996650B (en) | 2013-02-17 | 2013-02-17 | Photoetching and the method in etch lead hole |
| PCT/CN2013/091027 WO2014124586A1 (en) | 2013-02-17 | 2013-12-31 | Lithography and etching method for lead hole |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310051876.4A CN103996650B (en) | 2013-02-17 | 2013-02-17 | Photoetching and the method in etch lead hole |
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| Publication Number | Publication Date |
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| CN103996650A CN103996650A (en) | 2014-08-20 |
| CN103996650B true CN103996650B (en) | 2017-07-07 |
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| CN201310051876.4A Active CN103996650B (en) | 2013-02-17 | 2013-02-17 | Photoetching and the method in etch lead hole |
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| WO (1) | WO2014124586A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047531B (en) * | 2015-06-07 | 2018-06-29 | 上海华虹宏力半导体制造有限公司 | A kind of reworking method of polyimide coating |
| CN105810571B (en) * | 2016-03-25 | 2018-12-18 | 武汉新芯集成电路制造有限公司 | A kind of manufacturing process for eliminating aluminium electrode crystal defect |
| CN112501559B (en) * | 2020-11-12 | 2022-03-29 | 上海卫星装备研究所 | Preparation method of perforated anti-static polyimide film aluminized secondary surface mirror |
| CN115692194B (en) * | 2022-12-16 | 2023-05-12 | 合肥新晶集成电路有限公司 | Method for preparing semiconductor structure |
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|---|---|---|---|---|
| CN1842905A (en) * | 2003-08-26 | 2006-10-04 | 飞思卡尔半导体公司 | Method of forming a bond pad |
| CN101656197A (en) * | 2008-08-19 | 2010-02-24 | 台湾积体电路制造股份有限公司 | Through silicon via bonding structure |
| CN101777511A (en) * | 2009-01-09 | 2010-07-14 | 中芯国际集成电路制造(上海)有限公司 | Etching method for forming through hole |
| CN101800191A (en) * | 2009-02-11 | 2010-08-11 | 中国科学院微电子研究所 | Method for manufacturing dielectric bridge by using polyimide |
| CN102194735A (en) * | 2010-03-11 | 2011-09-21 | 中芯国际集成电路制造(上海)有限公司 | Method for forming through hole |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040092764A (en) * | 2003-04-29 | 2004-11-04 | 삼성전자주식회사 | Laser diode using self-align process and manufacturing method thereof |
| KR101576955B1 (en) * | 2009-01-20 | 2015-12-11 | 삼성전자주식회사 | Semiconductor device having bonding pad and semiconductor package having the same |
-
2013
- 2013-02-17 CN CN201310051876.4A patent/CN103996650B/en active Active
- 2013-12-31 WO PCT/CN2013/091027 patent/WO2014124586A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1842905A (en) * | 2003-08-26 | 2006-10-04 | 飞思卡尔半导体公司 | Method of forming a bond pad |
| CN101656197A (en) * | 2008-08-19 | 2010-02-24 | 台湾积体电路制造股份有限公司 | Through silicon via bonding structure |
| CN101777511A (en) * | 2009-01-09 | 2010-07-14 | 中芯国际集成电路制造(上海)有限公司 | Etching method for forming through hole |
| CN101800191A (en) * | 2009-02-11 | 2010-08-11 | 中国科学院微电子研究所 | Method for manufacturing dielectric bridge by using polyimide |
| CN102194735A (en) * | 2010-03-11 | 2011-09-21 | 中芯国际集成电路制造(上海)有限公司 | Method for forming through hole |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103996650A (en) | 2014-08-20 |
| WO2014124586A1 (en) | 2014-08-21 |
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