CN105047531B - A kind of reworking method of polyimide coating - Google Patents
A kind of reworking method of polyimide coating Download PDFInfo
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- CN105047531B CN105047531B CN201510309037.7A CN201510309037A CN105047531B CN 105047531 B CN105047531 B CN 105047531B CN 201510309037 A CN201510309037 A CN 201510309037A CN 105047531 B CN105047531 B CN 105047531B
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- polyimide coating
- polyimide
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- mask plate
- bonding pad
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- 239000004642 Polyimide Substances 0.000 title claims abstract description 89
- 229920001721 polyimide Polymers 0.000 title claims abstract description 89
- 239000011248 coating agent Substances 0.000 title claims abstract description 81
- 238000000576 coating method Methods 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910000831 Steel Inorganic materials 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 8
- 239000010959 steel Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000010422 painting Methods 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000013007 heat curing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000003949 imides Chemical class 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A kind of reworking method of polyimide coating, including：Step S1：Polyimide coating by the bonding pad opening surface with the first critical size prepared by the first mask plate is removed；Step S2：The wafer for having removed polyimide coating is cleaned；Step S3：Polyimide material is coated in crystal column surface；Step S4：The coating photoresist on polyimide material, and be exposed and develop with the second mask plate, and it is more than by the second critical size of the bonding pad opening prepared by the second mask plate the first critical size by the bonding pad opening prepared by the first mask plate.The critical size of bonding pad opening is not only amplified by the reworking method of polyimide coating of the present invention, increases process window, and drift caused by effectively solving redevelopment is folded poor, and is avoided polyimide coating at bonding pad opening and remained, and improves product yield.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of reworking methods of polyimide coating.
Background technology
Polyimides (Polyimide, PI) material is since it is with good high-temperature stability, mechanical performance, electrical property
Energy and chemical stability, have been widely used in the passivation layer process of semiconductor devices, to reduce various natural environments
The damage caused by semiconductor devices, so as to improve the reliability and stability of device.
In integrated circuit fabrication process, the polyimide coating of bonding pad opening and chip surface is usually completed step by step.That is,
Photoresist, exposure imaging, dry etching and wet clean process first by being coated with bonding pad opening etc. form pad and open
Mouthful；Then polyimide coating is formed by being coated with polyimides, exposure imaging technique etc. again.
By traditional polyimide passivation layer preparation process, mainly include the following steps that：(1) shape on the semiconductor device
Into top-level metallic aluminum steel and dielectric layer passivating film；(2) the coating polyimide material on top-level metallic aluminum steel and dielectric layer passivating film
Material；(3) photoresist is coated on polyimide material；(4) it exposes, develop, form passivation layer trepanning；(5) removal is exposure
Photoresist, and polyimide material is cured, obtain polyimide passivation layer.
In order to reduce production cost, the need two-in-one to the light shield of pad and polyimide coating in semiconductor fabrication process
Ask more and more.As those skilled in the art, ground is readily apparent that, when the two-in-one work of light shield to pad and polyimide coating
After dry etching and cleaning after the completion of skill, 4~5 μm of polyimide coating will be had and remain in chip surface.Into
During row terminal shipment inspection, there is obvious shortcoming if detecting the surface of polyimide coating, need to carry out flow of doing over again.It is existing
Do over again flow due to drift about folded difference the problem of, cause there are polyimide coating residual on pad, so that test and envelope
There are problems for dress, can not realize doing over again for polyimide coating.
Therefore in view of the problems of the existing technology, this case designer actively studies by the experience of the industry for many years is engaged in
Improvement then has a kind of reworking method of polyimide coating of the invention.
Invention content
The present invention be directed in the prior art, existing flow of doing over again causes to deposit on pad due to the problem of folded poor of drifting about
It is remained in polyimide coating, so that test and encapsulation there are problem, can not realize that doing over again etc. for polyimide coating lacks
It falls into and a kind of reworking method of polyimide coating is provided.
Purpose to realize the present invention, the present invention provide a kind of reworking method of polyimide coating, the polyimides
The reworking method of coating, including：
Perform step S1：To passing through the poly- of the bonding pad opening surface with the first critical size prepared by the first mask plate
Acid imide coating is removed；
Perform step S2：The wafer for having removed polyimide coating is cleaned；
Perform step S3：Polyimide material is coated in crystal column surface；
Perform step S4：The coating photoresist on polyimide material, and be exposed and develop with the second mask plate, and
It is more than by the second critical size of the bonding pad opening prepared by second mask plate by prepared by first mask plate
Bonding pad opening the first critical size.
Optionally, the second critical size X of the bonding pad opening prepared by second mask plate2More than passing through described first
First critical size X of the bonding pad opening prepared by mask plate1, 1 μm of ＜ X2-X11000 μm of ＜.
Optionally, the reworking method of the polyimide coating, further comprises：Perform step S5：Cure crystal column surface
Polyimide coating.
Optionally, the temperature of the heat cure is 200~800 DEG C, and the time of the heat cure is 30~360min.
Optionally, the film thickness after the polyimide material spin coating, baking is 1~50 μm, and the baking temperature is
50~800 DEG C, baking time is 30s~6h.
Optionally, before the step S1 is performed, the top-level metallic aluminum steel on the wafer has been formed or the wafer
On top-level metallic aluminum steel and the figure of deielectric-coating passivation layer formed.
Optionally, the preparation method of the pad, further comprises：
Perform step S11：Metal pad is formed on the substrate for other components for having formed semiconductor devices；
Perform step S12：Pad oxide layer and polyimide coating are set on the metal pad；
Perform step S13：The pad oxide layer and the polyimide coating by the first mask plate are prepared and had
There is the first critical size X1Bonding pad opening.
Optionally, when preparing the bonding pad opening with the first critical size by first mask plate, the polyamides is sub-
Amine coating and the pad oxide layer fold 0.5 μm of difference X ＜ in developing process caused by drift.
Optionally, the pad oxide layer is silicon dioxide layer or silicon oxynitride layer.
In conclusion the reworking method of polyimide coating of the present invention is by using the pad that can obtain the second critical size
Second mask plate of opening, and the second critical size of bonding pad opening that second mask plate obtains is covered more than described first
The critical size of the bonding pad opening, is not only amplified by the first critical size of the bonding pad opening that template obtains, and increases
Process window, drift caused by effectively solving redevelopment is folded poor, and avoids polyimide coating at bonding pad opening
Residual improves product yield.
Description of the drawings
Fig. 1 show the flow chart of the reworking method of polyimide coating of the present invention；
Fig. 2 show the semiconductor devices schematic diagram before the reworking method execution of polyimide coating of the present invention；
Fig. 3 show the semiconductor devices schematic diagram after the reworking method execution of polyimide coating of the present invention.
Specific embodiment
For the present invention will be described in detail create technology contents, construction feature, institute's reached purpose and effect, below in conjunction with reality
It applies example and attached drawing is coordinated to be described in detail.
Referring to Fig. 1, Fig. 1 show the flow chart of the reworking method of polyimide coating of the present invention.The polyimides
The reworking method of coating, includes the following steps：
Perform step S1：To passing through the poly- of the bonding pad opening surface with the first critical size prepared by the first mask plate
Acid imide coating is removed；
Perform step S2：The wafer for having removed polyimide coating is cleaned；
Perform step S3：Polyimide material is coated in crystal column surface；
Perform step S4：The coating photoresist on polyimide material, and be exposed and develop with the second mask plate, and
It is more than by the second critical size of the bonding pad opening prepared by second mask plate by prepared by first mask plate
Bonding pad opening the first critical size.
In order to obtain polyimide passivation layer, the reworking method of the polyimide coating further comprises：
Perform step S5：Cure the polyimide coating of crystal column surface.Preferably, the temperature of the heat cure for 200~
800 DEG C, the time of the heat cure is 30~360min.
In order to more intuitively disclose the technical solution of the present invention, the advantageous effect of the present invention is highlighted, in conjunction with specific implementation
Mode is illustrated the reworking method and principle of polyimide coating of the present invention.In a specific embodiment, the technique step
Suddenly, concrete numerical value etc. is to enumerate, and is not construed as the limitation to technical solution of the present invention.
As specific embodiment, in step S3, polyimide material, the polyimides material are coated in crystal column surface
It is 1~50 μm to expect the film thickness after spin coating, baking, and baking temperature is 50~800 DEG C, and baking time is 30s~6h.
Fig. 2, Fig. 3 are please referred to, Fig. 2 show the semiconductor devices before the reworking method execution of polyimide coating of the present invention
Structure diagram.Fig. 3 show the semiconductor device structure schematic diagram after the reworking method execution of polyimide coating of the present invention.
After the judgement done over again in the photoetching process needs for making polyimide coating, need to shell the polyimide coating first
From.When being done over again by the reworking method progress polyimide coating of polyimide coating of the present invention, according to process requirements, the crystalline substance
Top-level metallic aluminum steel on circle has been formed or the figure of the top-level metallic aluminum steel on the wafer and deielectric-coating passivation layer
It has been formed.The preparation method of the pad, further comprises：
Perform step S11：Metal pad 11 is formed on the substrate for other components for having been formed with semiconductor devices, such as
The metal pad 11 is aluminum or aluminum alloy；
Perform step S12：Pad oxide layer 12 and polyimide coating 13 are set on the metal pad 11；
Perform step S13：To the pad oxide layer 12 and the polyimide coating 13 by the first mask plate (not
Diagram) it prepares with the first critical size X1Bonding pad opening.
It is readily apparent that ground, it is described poly- when preparing the bonding pad opening with the first critical size by first mask plate
Acid imide coating 13 and the pad oxide layer 12 fold 0.5 μm of difference X ＜ in developing process caused by drift.In order to logical
The reworking method of polyimide coating of the present invention is crossed, removes the polyimide coating 13 of possible residual in bonding pad opening,
It in the step S4, is exposed and develops with the second mask plate, and the bonding pad opening prepared by by second mask plate
The second critical size be more than through the first critical size of the bonding pad opening prepared by first mask plate.
More specifically, the second critical size X of the bonding pad opening prepared by second mask plate2More than passing through described
First critical size X of the bonding pad opening prepared by one mask plate1, 1 μm of ＜ X2-X11000 μm of ＜.It is apparent that described second closes
Key size X2More than the first critical size X by the bonding pad opening prepared by first mask plate1, 1 μm of ＜ X2-X1＜
1000 μm, it can contain and 0.5 μm of difference X ＜ are folded caused by drift.
Without limitation, such as the pad oxide layer 12 is silicon dioxide layer or silicon oxynitride layer.The weld pad
The thickness of oxide skin(coating) 12 is 350~600 angstroms.
Referring to Fig. 3, simultaneously referring to Fig.2, it is apparent that the reworking method of polyimide coating of the present invention is by using can obtain
Second mask plate of the bonding pad opening of the second critical size, and the second of bonding pad opening the key that second mask plate obtains
Size is more than the first critical size of bonding pad opening that first mask plate obtains, not only by the key of the bonding pad opening
Size is amplified, and increases process window, and drift caused by effectively solving redevelopment is folded poor, and avoids pad and open
Polyimide coating residual at mouthful, improves product yield.
In conclusion the reworking method of polyimide coating of the present invention is by using the pad that can obtain the second critical size
Second mask plate of opening, and the second critical size of bonding pad opening that second mask plate obtains is covered more than described first
The critical size of the bonding pad opening, is not only amplified by the first critical size of the bonding pad opening that template obtains, and increases
Process window, drift caused by effectively solving redevelopment is folded poor, and avoids polyimide coating at bonding pad opening
Residual improves product yield.
Those skilled in the art, can be to this hair it will be appreciated that without departing from the spirit or scope of the present invention
It is bright to carry out various modifications and modification.Thus, if any modification or modification fall into the protection of the appended claims and equivalent
In the range of when, it is believed that the present invention covers these modifications and variations.
Claims (7)
1. a kind of reworking method of polyimide coating, which is characterized in that the reworking method of the polyimide coating, including：
Perform step S1：Pad is prepared, the preparation method of the pad includes：
Perform step S11：Metal pad is formed on the wafer for other components for having formed semiconductor devices；
Perform step S12：Pad oxide layer and polyimide coating are set on the metal pad；
Perform step S13：The pad oxide layer and the polyimide coating, which are prepared by the first mask plate, has the
The bonding pad opening of one critical size, and the polyimide coating and the pad oxide layer are folded poor with drift；And to institute
Polyimide coating is stated to be removed；
Perform step S2：The wafer for having removed polyimide coating is cleaned；
Perform step S3：Polyimide material is coated in crystal column surface；
Perform step S4：The coating photoresist on polyimide material, and be exposed and develop, and pass through with the second mask plate
Second critical size of the bonding pad opening prepared by second mask plate is more than the weldering prepared by by first mask plate
First critical size of dish opening folds difference to solve the drift between the polyimide coating and the pad oxide layer；
Perform step S5：Cure the polyimide coating of crystal column surface.
2. the reworking method of polyimide coating as described in claim 1, which is characterized in that prepared by second mask plate
Bonding pad opening the second critical size X2More than the first crucial ruler by the bonding pad opening prepared by first mask plate
Very little X1, 1 μm of ＜ X2-X11000 μm of ＜.
3. the reworking method of polyimide coating as described in claim 1, which is characterized in that the cured temperature is 200
~800 DEG C, the cured time is 10~360min.
4. the reworking method of polyimide coating as described in claim 1, which is characterized in that the polyimide material rotation
Film thickness after painting, baking is 1~50 μm, and the baking temperature is 50~800 DEG C, and baking time is 30s~6h.
5. the reworking method of polyimide coating as described in claim 1, which is characterized in that before the step S1 is performed, institute
The top-level metallic aluminum steel on wafer is stated to have been formed or the top-level metallic aluminum steel on the wafer and deielectric-coating passivation layer
Figure has been formed.
6. the reworking method of polyimide coating as claimed in claim 5, which is characterized in that pass through the first mask plate system
During for the bonding pad opening with the first critical size, the polyimide coating and the pad oxide layer are in developing process
In, 0.5 μm of difference X ＜ are folded caused by drift.
7. the reworking method of polyimide coating as claimed in claim 5, which is characterized in that the pad oxide layer is two
Silicon oxide layer or silicon oxynitride layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510309037.7A CN105047531B (en) | 2015-06-07 | 2015-06-07 | A kind of reworking method of polyimide coating |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510309037.7A CN105047531B (en) | 2015-06-07 | 2015-06-07 | A kind of reworking method of polyimide coating |
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| Publication Number | Publication Date |
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| CN105047531A CN105047531A (en) | 2015-11-11 |
| CN105047531B true CN105047531B (en) | 2018-06-29 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6103456A (en) * | 1998-07-22 | 2000-08-15 | Siemens Aktiengesellschaft | Prevention of photoresist poisoning from dielectric antireflective coating in semiconductor fabrication |
| CN103996626A (en) * | 2013-02-17 | 2014-08-20 | 无锡华润上华科技有限公司 | Reworking method of lead hole |
| CN103996650A (en) * | 2013-02-17 | 2014-08-20 | 无锡华润上华科技有限公司 | Method for photoetching and etching lead hole |
-
2015
- 2015-06-07 CN CN201510309037.7A patent/CN105047531B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6103456A (en) * | 1998-07-22 | 2000-08-15 | Siemens Aktiengesellschaft | Prevention of photoresist poisoning from dielectric antireflective coating in semiconductor fabrication |
| CN103996626A (en) * | 2013-02-17 | 2014-08-20 | 无锡华润上华科技有限公司 | Reworking method of lead hole |
| CN103996650A (en) * | 2013-02-17 | 2014-08-20 | 无锡华润上华科技有限公司 | Method for photoetching and etching lead hole |
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| CN105047531A (en) | 2015-11-11 |
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