CN103985777A - Silicon heterojunction solar cell and manufacturing method thereof - Google Patents
Silicon heterojunction solar cell and manufacturing method thereof Download PDFInfo
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- CN103985777A CN103985777A CN201410213259.4A CN201410213259A CN103985777A CN 103985777 A CN103985777 A CN 103985777A CN 201410213259 A CN201410213259 A CN 201410213259A CN 103985777 A CN103985777 A CN 103985777A
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- transparent conductive
- oxide film
- amorphous silicon
- conductive oxide
- silicon layer
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 162
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 162
- 239000010703 silicon Substances 0.000 title claims abstract description 162
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 56
- 239000013078 crystal Substances 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 238000000034 method Methods 0.000 claims abstract description 81
- 238000012545 processing Methods 0.000 claims abstract description 41
- 238000001020 plasma etching Methods 0.000 claims abstract description 30
- 238000007654 immersion Methods 0.000 claims abstract description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 114
- 239000000463 material Substances 0.000 claims description 59
- 238000002360 preparation method Methods 0.000 claims description 55
- 238000005530 etching Methods 0.000 claims description 43
- 239000007789 gas Substances 0.000 claims description 28
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 24
- 238000002347 injection Methods 0.000 claims description 22
- 239000007924 injection Substances 0.000 claims description 22
- 150000002500 ions Chemical class 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 229910003437 indium oxide Inorganic materials 0.000 claims description 13
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000011787 zinc oxide Substances 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 10
- 239000000460 chlorine Substances 0.000 claims description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- 229910001887 tin oxide Inorganic materials 0.000 claims description 7
- 239000002210 silicon-based material Substances 0.000 claims description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 92
- 230000000694 effects Effects 0.000 abstract description 10
- 239000010409 thin film Substances 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 7
- 238000011109 contamination Methods 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000005468 ion implantation Methods 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 56
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- 210000002268 wool Anatomy 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 235000008216 herbs Nutrition 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910014106 Na-Si Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000013083 solar photovoltaic technology Methods 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a silicon heterojunction solar cell and a manufacturing method thereof. The step of texturing of a crystal silicon substrate is omitted, reactive ion etching processing is carried out on a first transparent electric conduction oxide thin film serving as a front electrode with a plasma immersion ion implantation technique, the first transparent electric conduction oxide thin film with a texturing structure is obtained, and thus the high reflection reduction effect is achieved. Thus, compared with an existing manufacturing method of the silicon heterojunction solar cell, the manufacturing process is simplified, and impurity contamination and photo-generated carrier composition introduced after the texturing of a crystal silicon surface are reduced; furthermore, due to the fact that the crystal silicon substrate does not have a texturing structure, a good basis is provided for formation of all subsequent film layers through the smooth crystal silicon substrate surface, the quality of all the film layers is improved, and thus the performance of the cell can be further improved.
Description
Technical field
The present invention relates to technical field of solar batteries, espespecially a kind of silicon heterogenous solar cell and preparation method thereof.
Background technology
Along with increasing the weight of of energy crisis and problem of environmental pollution, research and the application and development of people to regenerative resource paid close attention to more, and wherein solar photovoltaic technology is one of the most promising renewable energy technologies.In recent years, silicon heterogenous solar cell, owing to having the features such as lower manufacture craft temperature, higher conversion efficiency, excellent high temperature/low light level power generation characteristics and low decay, has obtained developing rapidly.
In existing silicon heterogenous solar cell, in order to reduce to greatest extent light reflection, improve short circuit current (Isc), and then improve the photoelectric conversion efficiency of silicon heterogenous solar cell, generally need to carry out making herbs into wool operation to the surface of crystal silicon substrate, the suede structure making has anti-reflection effect, can absorb preferably and utilize sunlight.
At present, the general method that adopts wet etching is made matte on the surface of crystal silicon substrate, but not only processing step is loaded down with trivial details for wet etching method, controllability is poor, and the matte the irregularity that adopt wet etching method to make at crystal silicon substrate surface, cause photo-generated carrier compound more serious; Meanwhile, the impurity of introducing in wet etching process also can pollute crystal silicon substrate, the photoelectric conversion efficiency of the silicon heterogenous solar cell that impact makes.
Therefore, providing the simple silicon heterogenous solar cell that also can effectively promote photoelectric conversion efficiency of a kind of manufacturing process steps is the technical problem that those skilled in the art need solution badly.
Summary of the invention
The embodiment of the present invention provides a kind of silicon heterogenous solar cell and preparation method thereof, in order to realize the simple silicon heterogenous solar cell that also can effectively promote photoelectric conversion efficiency of a kind of manufacturing process steps.
The silicon heterogenous solar cell of one that the embodiment of the present invention provides, comprise: crystal silicon substrate, the first amorphous silicon layer of setting gradually in the light inlet side of described crystal silicon substrate, as the first transparent conductive oxide film and the gate line electrode of front electrode, and the second amorphous silicon layer and the back electrode that set gradually in the backlight side of described crystal silicon substrate; Wherein,
Described the first transparent conductive oxide film deviates from a side of described crystal silicon substrate, has by using plasma immersion ion injection technique described the first transparent conductive oxide film is carried out to the rear suede structure forming of reactive ion etching processing.
The above-mentioned silicon heterogenous solar cell that the embodiment of the present invention provides, owing to thering is as the first transparent conductive oxide film of front electrode the suede structure that using plasma immersion ion injection technique obtains, therefore make compared with suede structure at crystal silicon substrate with available technology adopting wet etching technique, not only can avoid the impact of impurity contamination that wet etching the introduces performance on solar cell, and it is more regular that using plasma immersion ion injection technique obtains suede structure structure on the first transparent conductive oxide film, thereby it is compound to reduce photo-generated carrier, play stronger anti-reflection or light trapping effect, and then can improve photoelectric conversion rate and the performance of silicon heterogenous solar cell, meanwhile, because crystal silicon substrate does not have suede structure, therefore more smooth crystal silicon substrate surface can provide the quality of follow-up each rete to improve, thereby can further improve the performance of silicon heterogenous solar cell.
Preferably, for the ease of implementing, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, in the time that described crystal silicon substrate is P type,
Described the first amorphous silicon layer comprises: the first intrinsic amorphous silicon layer setting gradually in the light inlet side of described crystal silicon substrate and N-type amorphous silicon layer;
Described the second amorphous silicon layer comprises: the second intrinsic amorphous silicon layer setting gradually in the backlight side of described crystal silicon substrate and P type amorphous silicon layer.
Preferably, for the ease of implementing, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, in the time that described crystal silicon substrate is N-type,
Described the first amorphous silicon layer comprises: the first intrinsic amorphous silicon layer setting gradually in the light inlet side of described crystal silicon substrate and P type amorphous silicon layer;
Described the second amorphous silicon layer comprises: the second intrinsic amorphous silicon layer setting gradually in the backlight side of described crystal silicon substrate and N-type amorphous silicon layer.
Preferably, for the ease of implementing, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, the material of described the first intrinsic amorphous silicon layer and described the second intrinsic amorphous silicon layer is intrinsic hydrogenated amorphous silicon material.
Preferably, for the ease of implementing, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, the material of described P type amorphous silicon layer is P type hydrogenated amorphous silicon material, and the material of described N-type amorphous silicon layer is N-type hydrogenated amorphous silicon material.
Preferably, for the ease of implementing, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, described back electrode comprises: deviate from described the second amorphous silicon layer the second transparent conductive oxide film and the metal electrode that described crystal silicon substrate one side sets gradually.
Preferably, for the ease of implementing, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, the structure of described metal electrode is grid line structure.
Preferably, for the ease of implementing, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, the material of described the first transparent conductive oxide film is tin-doped indium oxide, Al-Doped ZnO, gallium-doped zinc oxide or fluorine doped tin oxide.
The manufacture method of a kind of silicon heterogenous solar cell that the embodiment of the present invention provides, comprising:
Form successively the first amorphous silicon layer, the first transparent conductive oxide film and gate line electrode as front electrode in the light inlet side of crystal silicon substrate, form successively the second amorphous silicon layer and back electrode in the backlight side of described crystal silicon substrate;
After forming the first transparent conductive oxide film, before forming described gate line electrode, using plasma immersion ion injection technique is carried out reactive ion etching processing to described the first transparent conductive oxide film, obtains having the first transparent conductive oxide film of suede structure.
The manufacture method of the above-mentioned silicon heterogenous solar cell that the embodiment of the present invention provides, save crystal silicon substrate making herbs into wool step, using plasma immersion ion injection technique is carried out reactive ion etching processing to the first transparent conductive oxide film as front electrode, obtain having the first transparent conductive oxide film of suede structure, to play stronger anti-reflection effect.Therefore compared with existing silicon heterogenous preparation method of solar battery, not only simplify preparation technology, impurity contamination and the photo-generated carrier after crystal silicon surface wool manufacturing, introduced are reduced compound, and because crystal silicon substrate does not have suede structure, the formation that more smooth crystal silicon substrate surface is follow-up each rete provides good basis, the quality of each rete is improved, thereby can further improve the performance of battery.
Preferably, for the ease of implementing, in the above-mentioned manufacture method providing in the embodiment of the present invention, using plasma immersion ion injection technique is carried out reactive ion etching processing to described the first transparent conductive oxide film, specifically comprises:
The sample that is formed with described the first transparent conductive oxide film is placed in to the injecting chamber of matte preparation facilities;
Injecting chamber to the described matte preparation facilities that is placed with the sample that is formed with described the first transparent conductive oxide film vacuumizes processing;
In the injecting chamber of described matte preparation facilities after treatment, pass into the required etching gas of the first transparent conductive oxide film described in etching to vacuumizing described in process;
In the injecting chamber of described matte preparation facilities, described etching gas is converted to after plasma, the mode that using plasma injects is carried out reactive ion etching processing to described the first transparent conductive oxide film.
Preferably, for the ease of implementing, in the above-mentioned manufacture method providing in the embodiment of the present invention, the mode that described using plasma injects is carried out reactive ion etching processing to described the first transparent conductive oxide film, specifically comprises:
The bias voltage that the frequency that is 1W-10000W, plasma electrical source in the power output of the plasma electrical source of described matte preparation facilities is 1KHz-50GHz, apply is-10000V-10000V, the pulse duration that applies the power supply of bias voltage be 1 μ s-1s, the duty ratio that applies the power supply of bias voltage is that the mode that under 1%-99% and the etch period condition that is 1min-60min, using plasma injects is carried out reactive ion etching processing to described the first transparent conductive oxide film.
Preferably, for the ease of implementing, in the above-mentioned manufacture method providing in the embodiment of the present invention, in the injecting chamber of matte preparation facilities after treatment, pass into the required etching gas of the first transparent conductive oxide film described in etching to vacuumizing described in process, specifically comprise:
To passing into the required etching gas of the first transparent conductive oxide film described in etching in the injecting chamber of described matte preparation facilities, the etching pressure that makes the injecting chamber of described matte preparation facilities is 10
-2pa-10
3pa.
Preferably, for the ease of implementing, in the above-mentioned manufacture method providing in the embodiment of the present invention, the injecting chamber of the described matte preparation facilities that is placed with the substrate that is formed with described the first transparent conductive oxide film is vacuumized to processing, specifically comprises:
Injecting chamber to described matte preparation facilities vacuumizes processing, and extremely the background pressure of the injecting chamber of described matte preparation facilities is 10
-7pa-10
3pa.
Preferably, for the ease of implementing, in the above-mentioned manufacture method providing in the embodiment of the present invention, the material of described the first transparent conductive oxide film is tin-doped indium oxide, Al-Doped ZnO, gallium-doped zinc oxide or fluorine doped tin oxide.
Preferably, for the ease of implementing, in the above-mentioned manufacture method providing in the embodiment of the present invention, the required etching gas of the first transparent conductive oxide film is one of in boron chloride, methane, ethene, hydrogen, chlorine and argon gas or combination in any described in etching.
Brief description of the drawings
Fig. 1 carries out reactive ion etching processing for the using plasma immersion ion injection technique that the embodiment of the present invention provides flow chart to the first transparent conductive oxide film;
One of structural representation of the silicon heterogenous solar cell that Fig. 2 provides for the embodiment of the present invention;
Two of the structural representation of the silicon heterogenous solar cell that Fig. 3 provides for the embodiment of the present invention;
Three of the structural representation of the silicon heterogenous solar cell that Fig. 4 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the embodiment of silicon heterogenous solar cell that the embodiment of the present invention is provided and preparation method thereof is described in detail.
The manufacture method of a kind of silicon heterogenous solar cell that the embodiment of the present invention provides, can comprise the following steps:
Form successively the first amorphous silicon layer, the first transparent conductive oxide film and gate line electrode as front electrode in the light inlet side of crystal silicon substrate, form successively the second amorphous silicon layer and back electrode in the backlight side of crystal silicon substrate;
After forming the first transparent conductive oxide film, before forming gate line electrode, using plasma immersion ion injection technique is carried out reactive ion etching processing to the first transparent conductive oxide film, obtains having the first transparent conductive oxide film of suede structure.
The manufacture method of the above-mentioned silicon heterogenous solar cell that the embodiment of the present invention provides, save crystal silicon substrate making herbs into wool step, using plasma immersion ion injection technique is carried out reactive ion etching processing to the first transparent conductive oxide film as front electrode, obtain having the first transparent conductive oxide film of suede structure, to play stronger anti-reflection effect.Therefore compared with existing silicon heterogenous preparation method of solar battery, not only simplify preparation technology, impurity contamination and the photo-generated carrier after crystal silicon surface wool manufacturing, introduced are reduced compound, and because crystal silicon substrate does not have suede structure, the formation that more smooth crystal silicon substrate surface is follow-up each rete provides good basis, the quality of each rete is improved, thereby can further improve the performance of battery.
It should be noted that, in the above-mentioned manufacture method providing in the embodiment of the present invention, can first form each rete of crystal silicon substrate light inlet side, then form each rete of crystal silicon substrate backlight side, or first form each rete of crystal silicon substrate backlight side, then form each rete of crystal silicon substrate light inlet side; The rete that can certainly be formed on the light inlet side of crystal silicon substrate hockets with the rete that is formed on crystal silicon substrate backlight side, as long as what ensure to form successively in the light inlet side of crystal silicon substrate is the first amorphous silicon layer, the first transparent conductive oxide film and gate line electrode as front electrode, what form successively in the backlight side of described crystal silicon substrate is the second amorphous silicon layer and back electrode, in this no limit.
Preferably, in the above-mentioned manufacture method providing in the embodiment of the present invention, using plasma immersion ion injection technique is carried out reactive ion etching processing to the first transparent conductive oxide film, as shown in Figure 1, specifically can comprise the following steps:
S101, the sample that is formed with the first transparent conductive oxide film is placed in to the injecting chamber of matte preparation facilities;
S102, the injecting chamber of the matte preparation facilities that is placed with the sample that is formed with the first transparent conductive oxide film is vacuumized to processing;
S103, vacuumize to process in the injecting chamber of matte preparation facilities after treatment and pass into the required etching gas of etching the first transparent conductive oxide film;
S104, in the injecting chamber of matte preparation facilities, etching gas is converted to after plasma, the mode that using plasma injects is carried out reactive ion etching processing to the first transparent conductive oxide film.
Particularly, in the above-mentioned manufacture method providing in the embodiment of the present invention, matte preparation facilities can be existing plasma immersion ion implanter, in this no limit.
Particularly, in the specific implementation, in the above-mentioned manufacture method providing in the embodiment of the present invention, the material of the first transparent conductive oxide film can be tin-doped indium oxide (ITO), Al-Doped ZnO (AZO), gallium-doped zinc oxide (GZO) or fluorine doped tin oxide (FTO) etc., in this no limit.
Preferably, in the above-mentioned manufacture method providing in the embodiment of the present invention, the material of the first transparent conductive oxide film is tin-doped indium oxide (ITO).
Preferably, in the above-mentioned manufacture method providing in the embodiment of the present invention, the etching gas of etching the first transparent conductive oxide film is boron chloride (BCl
3), methane (CH
4), ethene (C
2h
4), hydrogen (H
2) chlorine (Cl
2) and the gas such as argon gas (Ar) in one of or combination in any.
Preferably, in the specific implementation, in the above-mentioned manufacture method providing in the embodiment of the present invention, in the time that the material of the first transparent conductive oxide film is tin-doped indium oxide (ITO) or fluorine doped tin oxide (FTO), the required etching gas of etching the first transparent conductive oxide film can also be boron chloride (BCl
3), methane (CH
4), ethene (C
2h
4), chlorine (Cl
2) and argon gas (Ar) in one of or combination in any.
Preferably, in the above-mentioned manufacture method providing in the embodiment of the present invention, the mode that step S104 using plasma injects is carried out reactive ion etching processing to the first transparent conductive oxide film, specifically comprises:
The bias voltage that the frequency that is 1W-10000W, plasma electrical source in the power output of the plasma electrical source of matte preparation facilities is 1KHz-50GHz, apply is-10000V-10000V, the pulse duration that applies the power supply of bias voltage be 1 μ s-1s, the duty ratio that applies the power supply of bias voltage is that the mode that under 1%-99% and the etch period condition that is 1min-60min, using plasma injects is carried out reactive ion etching processing to the first transparent conductive oxide film.Particularly, under these conditions, in matte preparation facilities, produce plasma, the plasma producing is injected in the first transparent conductive oxide film, the plasma and this first transparent conductive oxide film that are injected in the first transparent conductive oxide film react, thereby obtain having the first transparent conductive oxide film of suede structure.
Particularly, in the above-mentioned manufacture method providing in the embodiment of the present invention, can apply the pulse duration of power supply of bias voltage and etch period and control by adjusting the injection rate of plasma, control the injection degree of depth of plasma by the bias voltage that regulates etching pressure and apply.
Preferably, in the above-mentioned manufacture method providing in the embodiment of the present invention, the output power of plasma electrical source is between 50W-1500W, the FREQUENCY CONTROL of plasma electrical source is between 1MHz-100MHz, between be controlled at-5000V-0V of the bias voltage applying, apply the pulse width control of power supply of bias voltage between 1 μ s-0.1s, apply the Duty ratio control of power supply of bias voltage between 10%-90%, it is good that etch period is controlled at effect between 1min-30min.
Preferably, in the above-mentioned manufacture method providing in the embodiment of the present invention, step S103 vacuumizes to process in the injecting chamber of matte preparation facilities after treatment and passes into the required etching gas of etching the first transparent conductive oxide film, specifically comprises:
In the injecting chamber of matte preparation facilities, pass into the required etching gas of etching the first transparent conductive oxide film, the etching pressure that makes the injecting chamber of matte preparation facilities is 10
-2pa-10
3pa.
It should be noted that, etching pressure refers to operating pressure required when the injecting chamber of above-mentioned matte preparation facilities carries out reactive ion etching processing after passing into etching gas.
Preferably, in the above-mentioned manufacture method providing in the embodiment of the present invention, etching pressure is controlled at 10
-1between Pa-500Pa, effect is better.
Preferably, in order to reduce the interference of foreign gas in the injecting chamber of matte preparation facilities, in the above-mentioned manufacture method providing in the embodiment of the present invention, step S102 vacuumizes processing to the injecting chamber of the described matte preparation facilities that is placed with the sample that is formed with the first transparent conductive oxide film, specifically comprises:
Injecting chamber to matte preparation facilities vacuumizes processing, to the background pressure of the injecting chamber of matte preparation facilities be 10
-7pa-10
3pa.Particularly, the background pressure of the injecting chamber of matte preparation facilities is less, and vacuum degree is higher, and anti-jamming effectiveness is better, but higher to the requirement of vaccum-pumping equipment.
Preferably, in the above-mentioned manufacture method providing in the embodiment of the present invention, background pressure is controlled at 10
-7pa-10
-3between Pa, effect is better.
Preferably, further, in the above-mentioned manufacture method providing in the embodiment of the present invention, in order to obtain the better suede structure of performance, in using plasma immersion ion injection technique, described the first transparent conductive oxide film is carried out after reactive ion etching processing obtains having the first transparent conductive oxide film of suede structure, before forming described gate line electrode, also can comprise:
Adopt wet chemical etch method to carry out reactive ion etching processing to first transparent conductive oxide film with suede structure.
Particularly, in the above-mentioned manufacture method providing in the embodiment of the present invention, adopt wet chemical etch method to carry out reactive ion etching processing to first transparent conductive oxide film with suede structure, specifically comprise:
First transparent conductive oxide film with suede structure is put into etching solution, this first transparent conductive oxide film with suede structure is carried out to reactive ion etching processing.
Further, in the specific implementation, in the above-mentioned manufacture method providing in the embodiment of the present invention, etching solution can be hydrochloric acid (HCl), nitric acid (HNO
3), sulfuric acid (H
2sO
4), phosphoric acid (H
3pO
4), ammonium chloride (NH
4and iron chloride (FeCl Cl)
3) etc. one or combination in any in solution.
Preferably, in the above-mentioned manufacture method providing in the embodiment of the present invention, in the time that crystal silicon substrate is P type (Pc-Si),
Forming the first amorphous silicon layer in the light inlet side of crystal silicon substrate specifically comprises: the light inlet side at crystal silicon substrate forms the first intrinsic amorphous silicon layer, forms N-type amorphous silicon layer in the first intrinsic amorphous silicon layer;
Forming the second amorphous silicon layer in the backlight side of crystal silicon substrate specifically comprises: form the second intrinsic amorphous silicon layer in the backlight side of crystal silicon substrate, form P type amorphous silicon layer in the second intrinsic amorphous silicon layer.
Or, preferably, in the above-mentioned manufacture method providing in the embodiment of the present invention, in the time that crystal silicon substrate is N-type (Nc-Si),
Forming the first amorphous silicon layer in the light inlet side of crystal silicon substrate specifically comprises: the light inlet side at crystal silicon substrate forms the first intrinsic amorphous silicon layer, forms P type amorphous silicon layer in the first intrinsic amorphous silicon layer;
Forming the second amorphous silicon layer in the backlight side of crystal silicon substrate specifically comprises: form the second intrinsic amorphous silicon layer in the backlight side of crystal silicon substrate, form N-type amorphous silicon layer in the second intrinsic amorphous silicon layer.
Preferably, in the specific implementation, in the above-mentioned manufacture method providing in the embodiment of the present invention, the material of the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer can be intrinsic amorphous silicon hydride (Ia-Si:H) material, the material of P type amorphous silicon layer can be P type amorphous silicon hydride (Pa-Si:H) material, the material of N-type amorphous silicon layer is N-type amorphous silicon hydride (Na-Si:H) material, can certainly be other material that can realize the present invention program, in this no limit.
Further, in the specific implementation, in the above-mentioned manufacture method providing in the embodiment of the present invention, form gate line electrode and specifically can comprise:
Adopt the mode of silk screen printing to form gate line electrode on first transparent conductive oxide film with suede structure, can certainly adopt the alternate manner that can realize the present invention program to make gate line electrode, in this no limit.
Preferably, in the specific implementation, in the above-mentioned manufacture method providing in the embodiment of the present invention, the material of gate line electrode can be silver (Ag), can certainly be other material that can realize the present invention program, in this no limit.
Preferably, in the above-mentioned manufacture method providing in the embodiment of the present invention, form back electrode in the backlight side of crystal silicon substrate, specifically can comprise:
A side that deviates from crystal silicon substrate at the second amorphous silicon layer forms the second transparent conductive oxide film;
A side that deviates from crystal silicon substrate at the second transparent conductive oxide film forms metal electrode.
Particularly, in the specific implementation, the material of the second transparent conductive oxide film can be identical with the material of the first transparent conductive oxide film, can certainly be different, in this no limit.
Preferably, in the above-mentioned manufacture method providing in the embodiment of the present invention, the material of the first transparent conductive oxide film and the second transparent conductive oxide film is tin-doped indium oxide (ITO).
Further, in the above-mentioned manufacture method providing in the embodiment of the present invention, the material of metal electrode can be silver (Ag), can certainly be other material that can realize the present invention program, in this no limit.
Particularly, in the above-mentioned manufacture method providing in the embodiment of the present invention, metal electrode can be whole structure, can be also grid line structure, in this no limit.
Preferably, in the above-mentioned manufacture method providing in the embodiment of the present invention, metal electrode is grid line structure.In the time that metal electrode is grid line structure, a side that specifically can adopt screen printing mode to deviate from crystal silicon substrate at the second transparent conductive oxide film forms the metal electrode of grid line structure, certainly can adopt alternate manner to make, in this no limit.
Particularly, below so that the manufacture method of the above-mentioned silicon heterogenous solar cell that provides of the detailed explanation embodiment of the present invention to be provided by a concrete example.
Example one:
Particularly, take crystal silicon substrate as example as N-type, the manufacture method of silicon heterogenous solar cell, specifically comprises the following steps:
(1) crystal silicon substrate is cleaned, remove surface damage and the surface contaminant of crystal silicon substrate;
(2) form the first intrinsic amorphous silicon layer in the backlight side of crystal silicon substrate;
Particularly, the material of the first intrinsic amorphous silicon layer is intrinsic amorphous silicon hydride (Ia-Si:H) material.
(3) in the first intrinsic amorphous silicon layer, form N-type amorphous silicon layer;
Particularly, the material of N-type amorphous silicon layer is N-type amorphous silicon hydride (Na-Si:H) material.
(4) form the second intrinsic amorphous silicon layer in the light inlet side of crystal silicon substrate;
Particularly, the material of the second intrinsic amorphous silicon layer is intrinsic amorphous silicon hydride (Ia-Si:H) material.
(5) in the second intrinsic amorphous silicon layer, form P type amorphous silicon layer;
Particularly, P type amorphous silicon layer material is P type amorphous silicon hydride (Pa-Si:H) material.
(6) on N-type amorphous silicon layer, form the second transparent conductive oxide film;
Particularly, the material of the second transparent conductive oxide film is tin-doped indium oxide (ITO).
(7) on this second transparent conductive oxide film, form metal electrode;
Particularly, the material of metal electrode is silver (Ag).
(8) on P type amorphous silicon layer, form the first transparent conductive oxide film as front electrode;
(9) using plasma immersion ion injection technique is carried out reactive ion etching processing to the first transparent conductive oxide film, obtains having the first transparent conductive oxide film of suede structure;
Particularly, the material of the first transparent conductive oxide film is tin-doped indium oxide (ITO), and using plasma immersion ion injection technique is carried out reactive ion etching processing to ito thin film and specifically can be comprised the following steps:
A) the above-mentioned sample that is formed with ito thin film is placed in to the injecting chamber of matte preparation facilities;
B) injecting chamber of the matte preparation facilities that is placed with above-mentioned sample is vacuumized to processing, be controlled at 10 to the background pressure of the injecting chamber of matte preparation facilities
-7pa-10
-3between Pa;
C) in process vacuumizes the injecting chamber of matte preparation facilities after treatment, pass into the required etching gas of etching ito thin film, the etching pressure that makes the injecting chamber of this matte preparation facilities is 10
-1pa-500Pa;
Particularly, in the specific implementation, etching gas can be boron chloride (BCl
3), methane (CH
4), ethene (C
2h
4), chlorine (Cl
2) and the gas such as argon gas (Ar) in one of or combination in any, in this no limit.
D) in the injecting chamber of matte preparation facilities, the power output that plasma electrical source is set is 50W-1500W, the frequency of plasma electrical source is 1MHz-100MHz, the bias voltage applying is-5000V-0V, the pulse duration that applies the power supply of bias voltage is 1 μ s-0.1s, the duty ratio that applies the power supply of bias voltage is 10%-90%, etching gas is converted to plasma, plasma injects ito thin film and ito thin film reacts, when etch period is 1min-30min, can obtain having the ito thin film of suede structure;
(10) there is the gate line electrode of silk screen printing silver material on the first transparent conductive oxide film of suede structure at this.
Particularly, gate line electrode can be two grid or three grid etc., in this no limit
Based on same inventive concept, the embodiment of the present invention also provides a kind of silicon heterogenous solar cell, as shown in Figure 2, comprise: crystal silicon substrate 100, the first amorphous silicon layer 110 of setting gradually in the light inlet side of crystal silicon substrate 100, as the first transparent conductive oxide film 120 and the gate line electrode 130 of front electrode, and the second amorphous silicon layer 140 and the back electrode 150 that set gradually in the backlight side of crystal silicon substrate 100; Wherein,
The first transparent conductive oxide film 120 deviates from a side of crystal silicon substrate 100, has by using plasma immersion ion injection technique the first transparent conductive oxide film 120 is carried out to the rear suede structure forming of reactive ion etching processing.
The above-mentioned silicon heterogenous solar cell that the embodiment of the present invention provides, owing to thering is as the first transparent conductive oxide film of front electrode the suede structure that using plasma immersion ion injection technique obtains, therefore make compared with suede structure at crystal silicon substrate with available technology adopting wet etching technique, not only can avoid the impact of impurity contamination that wet etching the introduces performance on solar cell, and it is more regular that using plasma immersion ion injection technique obtains suede structure structure on the first transparent conductive oxide film, thereby it is compound to reduce photo-generated carrier, play stronger anti-reflection or light trapping effect, and then can improve photoelectric conversion rate and the performance of silicon heterogenous solar cell, meanwhile, because crystal silicon substrate does not have suede structure, therefore more smooth crystal silicon substrate surface can provide the quality of follow-up each rete to improve, thereby can further improve the performance of silicon heterogenous solar cell.
Particularly, the above-mentioned silicon heterogenous solar cell surface reflectivity that the embodiment of the present invention provides can approach zero, and relatively existing silicon heterogenous solar cell surface reflectivity 5% has nearly reduced by 5%.Only consider from current boost angle, the photoelectric conversion efficiency of supposing existing silicon heterogenous solar cell is 20%, and the photoelectric efficiency of the above-mentioned silicon heterogenous solar cell that the embodiment of the present invention provides just can improve 1%; And crystal silicon substrate does not have suede structure, the formation that more smooth crystal silicon substrate surface is follow-up each rete provides good basis, the quality of each rete is improved, and then can promote cell photoelectric conversion efficiency again.Therefore the above-mentioned silicon heterogenous solar cell that, the embodiment of the present invention provides has higher photoelectric conversion efficiency.
Particularly, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, the material of the first transparent conductive oxide film can be tin-doped indium oxide (ITO), Al-Doped ZnO (AZO), gallium-doped zinc oxide (GZO) or fluorine doped tin oxide (FTO) etc., in this no limit.
Preferably, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, the material of the first transparent conductive oxide film is tin-doped indium oxide (ITO).
Preferably, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, as shown in Figure 3, in the time that crystal silicon substrate is P type (Pc-Si),
The first amorphous silicon layer 110 comprises: the first intrinsic amorphous silicon layer 111 and the N-type amorphous silicon layer 112 that set gradually in the light inlet side of crystal silicon substrate 100;
The second amorphous silicon layer 140 comprises: the second intrinsic amorphous silicon layer 141 setting gradually in the backlight side of crystal silicon substrate 100 and P type amorphous silicon layer 142.
Or, preferably, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, as shown in Figure 4, in the time that crystal silicon substrate 100 is N-type (Nc-Si),
The first amorphous silicon layer 110 comprises: the first intrinsic amorphous silicon layer 111 setting gradually in the light inlet side of crystal silicon substrate 100 and P type amorphous silicon layer 142;
The second amorphous silicon layer 140 comprises: the second intrinsic amorphous silicon layer 141 and the N-type amorphous silicon layer 112 that set gradually in the backlight side of crystal silicon substrate 100.
Preferably, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, the material of the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer can be intrinsic amorphous silicon hydride (Ia-Si:H) material, certainly also can be other material that can realize the present invention program, in this no limit.
Preferably, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, the material of P type amorphous silicon layer can be P type amorphous silicon hydride (Pa-Si:H) material, the material of N-type amorphous silicon layer is N-type amorphous silicon hydride (Na-Si:H) material, can certainly be other material that can realize the present invention program, in this no limit.
Preferably, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, as shown in Figure 3 and Figure 4, back electrode 150 comprises: deviate from the second amorphous silicon layer 140 the second transparent conductive oxide film 151 and the metal electrode 152 that crystal silicon substrate 100 1 sides set gradually.
Particularly, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, the material of the second transparent conductive oxide film can be identical with the material of the first transparent conductive oxide film, the material of certain the second transparent conductive oxide film also can be chosen the not identical material of material of the first transparent conductive oxide film, in this no limit.
Preferably, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, the material of the first transparent conductive oxide film and the second transparent conductive oxide film is tin-doped indium oxide (ITO).
Further, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, as shown in Figure 4, the structure of metal electrode 152 is grid line structure; Or as shown in Figure 3, the structure of metal electrode 152 can be also whole structure, in this no limit.
Preferably, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, as shown in Figure 4, the structure of metal electrode 152 is preferably grid line structure.
Preferably, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, the material of metal electrode can be silver (Ag), can certainly be other material that can realize the present invention program, in this no limit.
Further, in the above-mentioned silicon heterogenous solar cell providing in the embodiment of the present invention, the material of gate line electrode can be silver (Ag), can certainly be other material that can realize the present invention program, in this no limit.
Silicon heterogenous solar cell of one that the embodiment of the present invention provides and preparation method thereof, save crystal silicon substrate making herbs into wool step, using plasma immersion ion injection technique is carried out reactive ion etching processing to the first transparent conductive oxide film as front electrode, obtain having the first transparent conductive oxide film of suede structure, to play stronger anti-reflection effect.Therefore compared with existing silicon heterogenous preparation method of solar battery, not only simplify preparation technology, impurity contamination and the photo-generated carrier after crystal silicon surface wool manufacturing, introduced are reduced compound, and because crystal silicon substrate does not have suede structure, the formation that more smooth crystal silicon substrate surface is follow-up each rete provides good basis, the quality of each rete is improved, thereby can further improve the performance of battery.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention.Like this, if these amendments of the present invention and within modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.
Claims (15)
1. a silicon heterogenous solar cell, it is characterized in that, comprise: crystal silicon substrate, the first amorphous silicon layer of setting gradually in the light inlet side of described crystal silicon substrate, as the first transparent conductive oxide film and the gate line electrode of front electrode, and the second amorphous silicon layer and the back electrode that set gradually in the backlight side of described crystal silicon substrate; Wherein,
Described the first transparent conductive oxide film deviates from a side of described crystal silicon substrate, has by using plasma immersion ion injection technique described the first transparent conductive oxide film is carried out to the rear suede structure forming of reactive ion etching processing.
2. silicon heterogenous solar cell as claimed in claim 1, is characterized in that, in the time that described crystal silicon substrate is P type,
Described the first amorphous silicon layer comprises: the first intrinsic amorphous silicon layer setting gradually in the light inlet side of described crystal silicon substrate and N-type amorphous silicon layer;
Described the second amorphous silicon layer comprises: the second intrinsic amorphous silicon layer setting gradually in the backlight side of described crystal silicon substrate and P type amorphous silicon layer.
3. silicon heterogenous solar cell as claimed in claim 1, is characterized in that, in the time that described crystal silicon substrate is N-type,
Described the first amorphous silicon layer comprises: the first intrinsic amorphous silicon layer setting gradually in the light inlet side of described crystal silicon substrate and P type amorphous silicon layer;
Described the second amorphous silicon layer comprises: the second intrinsic amorphous silicon layer setting gradually in the backlight side of described crystal silicon substrate and N-type amorphous silicon layer.
4. silicon heterogenous solar cell as claimed in claim 2 or claim 3, is characterized in that, the material of described the first intrinsic amorphous silicon layer and described the second intrinsic amorphous silicon layer is intrinsic hydrogenated amorphous silicon material.
5. silicon heterogenous solar cell as claimed in claim 2 or claim 3, is characterized in that, the material of described P type amorphous silicon layer is P type hydrogenated amorphous silicon material, and the material of described N-type amorphous silicon layer is N-type hydrogenated amorphous silicon material.
6. the silicon heterogenous solar cell as described in claim 1-3 any one, is characterized in that, described back electrode comprises: deviate from described the second amorphous silicon layer the second transparent conductive oxide film and the metal electrode that described crystal silicon substrate one side sets gradually.
7. silicon heterogenous solar cell as claimed in claim 6, is characterized in that, the structure of described metal electrode is grid line structure.
8. the silicon heterogenous solar cell as described in claim 1-3 any one, is characterized in that, the material of described the first transparent conductive oxide film is tin-doped indium oxide, Al-Doped ZnO, gallium-doped zinc oxide or fluorine doped tin oxide.
9. a manufacture method for silicon heterogenous solar cell, is characterized in that, comprising:
Form successively the first amorphous silicon layer, the first transparent conductive oxide film and gate line electrode as front electrode in the light inlet side of crystal silicon substrate, form successively the second amorphous silicon layer and back electrode in the backlight side of described crystal silicon substrate;
After forming the first transparent conductive oxide film, before forming described gate line electrode, using plasma immersion ion injection technique is carried out reactive ion etching processing to described the first transparent conductive oxide film, obtains having the first transparent conductive oxide film of suede structure.
10. manufacture method as claimed in claim 9, is characterized in that, using plasma immersion ion injection technique is carried out reactive ion etching processing to described the first transparent conductive oxide film, specifically comprises:
The sample that is formed with described the first transparent conductive oxide film is placed in to the injecting chamber of matte preparation facilities;
Injecting chamber to the described matte preparation facilities that is placed with the sample that is formed with described the first transparent conductive oxide film vacuumizes processing;
In the injecting chamber of described matte preparation facilities after treatment, pass into the required etching gas of the first transparent conductive oxide film described in etching to vacuumizing described in process;
In the injecting chamber of described matte preparation facilities, described etching gas is converted to after plasma, the mode that using plasma injects is carried out reactive ion etching processing to described the first transparent conductive oxide film.
11. manufacture methods as claimed in claim 10, is characterized in that, the mode that described using plasma injects is carried out reactive ion etching processing to described the first transparent conductive oxide film, specifically comprises:
The bias voltage that the frequency that is 1W-10000W, plasma electrical source in the power output of the plasma electrical source of described matte preparation facilities is 1KHz-50GHz, apply is-10000V-10000V, the pulse duration that applies the power supply of bias voltage be 1 μ s-1s, the duty ratio that applies the power supply of bias voltage is that the mode that under 1%-99% and the etch period condition that is 1min-60min, using plasma injects is carried out reactive ion etching processing to described the first transparent conductive oxide film.
12. manufacture methods as claimed in claim 10, is characterized in that, pass into the required etching gas of the first transparent conductive oxide film described in etching to vacuumizing described in process in the injecting chamber of matte preparation facilities after treatment, specifically comprise:
To passing into the required etching gas of the first transparent conductive oxide film described in etching in the injecting chamber of described matte preparation facilities, the etching pressure that makes the injecting chamber of described matte preparation facilities is 10
-2pa-10
3pa.
13. manufacture methods as claimed in claim 10, is characterized in that, the injecting chamber of the described matte preparation facilities that is placed with the sample that is formed with described the first transparent conductive oxide film is vacuumized to processing, specifically comprise:
Injecting chamber to described matte preparation facilities vacuumizes processing, and extremely the background pressure of the injecting chamber of described matte preparation facilities is 10
-7pa-10
3pa.
14. manufacture methods as described in claim 9-13 any one, is characterized in that, the material of described the first transparent conductive oxide film is tin-doped indium oxide, Al-Doped ZnO, gallium-doped zinc oxide or fluorine doped tin oxide.
15. manufacture methods as claimed in claim 14, is characterized in that, the required etching gas of the first transparent conductive oxide film is one of in boron chloride, methane, ethene, hydrogen, chlorine and argon gas or combination in any described in etching.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104362193A (en) * | 2014-10-24 | 2015-02-18 | 新奥光伏能源有限公司 | Heterojunction solar cell and manufacturing method thereof |
| CN110148635A (en) * | 2019-04-28 | 2019-08-20 | 北京点域科技有限公司 | A kind of process flow reducing surface recombination anti-reflection film battery |
| CN114709292A (en) * | 2022-03-29 | 2022-07-05 | 通威太阳能（成都）有限公司 | Solar cell and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101308882A (en) * | 2008-07-22 | 2008-11-19 | 东莞宏威数码机械有限公司 | Preparing method of transparent electricity conductive oxide suede |
| CN101916787A (en) * | 2010-05-25 | 2010-12-15 | 中国科学院微电子研究所 | Black silicon solar cell and preparation method thereof |
| CN203351632U (en) * | 2013-06-25 | 2013-12-18 | 深圳市拓日新能源科技股份有限公司 | Thin film silicon and crystalline silicon heterojunction bifacial solar cell |
-
2014
- 2014-05-20 CN CN201410213259.4A patent/CN103985777A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101308882A (en) * | 2008-07-22 | 2008-11-19 | 东莞宏威数码机械有限公司 | Preparing method of transparent electricity conductive oxide suede |
| CN101916787A (en) * | 2010-05-25 | 2010-12-15 | 中国科学院微电子研究所 | Black silicon solar cell and preparation method thereof |
| CN203351632U (en) * | 2013-06-25 | 2013-12-18 | 深圳市拓日新能源科技股份有限公司 | Thin film silicon and crystalline silicon heterojunction bifacial solar cell |
Non-Patent Citations (1)
| Title |
|---|
| 薛进奎: "AZO薄膜表面织构机理和表面织构均匀性的研究", 《中国优秀硕士学位论文全文数据库 基础科学辑》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104362193A (en) * | 2014-10-24 | 2015-02-18 | 新奥光伏能源有限公司 | Heterojunction solar cell and manufacturing method thereof |
| CN110148635A (en) * | 2019-04-28 | 2019-08-20 | 北京点域科技有限公司 | A kind of process flow reducing surface recombination anti-reflection film battery |
| CN114709292A (en) * | 2022-03-29 | 2022-07-05 | 通威太阳能（成都）有限公司 | Solar cell and preparation method thereof |
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