CN103972325A - Single-surface texturing method for single-crystal silicon wafers - Google Patents
Single-surface texturing method for single-crystal silicon wafers Download PDFInfo
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- CN103972325A CN103972325A CN201310566233.3A CN201310566233A CN103972325A CN 103972325 A CN103972325 A CN 103972325A CN 201310566233 A CN201310566233 A CN 201310566233A CN 103972325 A CN103972325 A CN 103972325A
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 76
- 235000012431 wafers Nutrition 0.000 title abstract 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 98
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 64
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 239000007788 liquid Substances 0.000 claims abstract description 24
- 239000003513 alkali Substances 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 43
- 210000002268 wool Anatomy 0.000 claims description 41
- 235000008216 herbs Nutrition 0.000 claims description 40
- -1 oversaturated hexafluorosilicic acid Chemical class 0.000 claims description 31
- 239000000843 powder Substances 0.000 claims description 29
- 230000008021 deposition Effects 0.000 claims description 27
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 16
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 12
- 239000004327 boric acid Substances 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 11
- 238000003756 stirring Methods 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 2
- 230000007062 hydrolysis Effects 0.000 claims description 2
- 238000006460 hydrolysis reaction Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 25
- 239000000126 substance Substances 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 238000003475 lamination Methods 0.000 abstract description 2
- 238000000992 sputter etching Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 29
- 238000010586 diagram Methods 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000000717 retained effect Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000706 filtrate Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention provides a single-surface texturing method for single-crystal silicon wafers. The single-surface texturing method includes steps of a), depositing a silicon dioxide film on the surface of one single side of each single-crystal silicon wafer; b), performing alkali texturing on the single-crystal silicon wafers where the silicon dioxide films are deposited. The surface of the single side of each single-crystal silicon wafer is masked by the corresponding silicon dioxide film, so that the surface of the other side of each single-crystal silicon wafer can be textured. The single-surface texturing method has the advantages that the single surface of each single-crystal silicon wafer can be textured by the aid of a simple depositing technology and a conventional alkali texturing process for single-crystal silicon; a single-surface texturing effect can be realized as compared with conventional double-surface alkali texturing on single-crystal silicon wafers, and accordingly unnecessary loss of silicon wafers and unnecessary loss of texturing liquid chemicals can be greatly reduced; the single-surface texturing process for the single-crystal silicon wafers is simple as compared with other disclosed single-surface texturing processes for single-crystal silicon wafers, chemicals are easy to purchase, accordingly, shortcomings of excessively high cost of a reaction ion etching method and a floating method, excessively low efficiency of a lamination method and the like can be overcome, and the single-surface texturing method has excellent actual application value.
Description
Technical field
The present invention relates to monocrystaline silicon solar cell preparing technical field, particularly a kind of method for monocrystalline silicon piece one texture-etching side.
Background technology
In crystal silicon solar energy battery production process, silicon chip surface texturing (making herbs into wool) is reducing surface reflectivity important role, is also one of effective means improving solar cell photoelectric transformation efficiency.The process for etching of monocrystalline silicon piece adopts the wet-chemical etching technique of the alkaline solution of NaOH or KOH system more at present.This process using be immersion, corrode simultaneously on silicon chip two sides, two sides all forms matte.But in final solar cell, only have a surperficial making herbs into wool face to play a role, another surperficial making herbs into wool face is without any use, and this surface is due to out-of-flatness, also can cause adverse effect to the preparation of aluminium back surface field.In addition, continuous lifting along with microtomy, monocrystalline silicon piece will be cut thinner and thinner, for reducing adverse effect that thin slice brings existing technique and for meeting the strict demand of industry to cost control, be in technique process for etching foremost and need reduce unnecessary silicon loss as far as possible, so one texture-etching side will become later development trend.
The conventional method that realizes monocrystalline silicon piece one texture-etching side is reactive ion etching method, floating method and laminated layer method at present.Reactive ion etching method is dry method making herbs into wool, and the equipment of its required input and the cost of chemicals are much larger than conventional alkali making herbs into wool wet processing, and this has limited its extensive use.Floating method is that silicon chip is swum in Woolen-making liquid, allows its lower surface contact with solution, and upper surface does not contact with solution, adopts chain type technique to carry out making herbs into wool.At present, the fine-hair maring using monocrystalline silicon slice time generally need be greater than 10min, for guaranteed efficiency, the belt speed of online chain type technique is generally not less than 1m/min, this just requires the length of only making herbs into wool section of chain equipment just to need at least 10m, the requirement that this has increased greatly to equipment and place input, is not easy to promote on a large scale.Laminated layer method is that two monocrystalline silicon pieces are contacted back-to-back, thereby it is few to realize contact-making surface corrosion, the normal making herbs into wool of noncontact face.Although this method does not increase the input of equipment and chemicals, the inserted sheet of lamination is got sheet process and need be inserted and get manually, and production efficiency is low, is unfavorable for the application of the large production of automation.Application number is the implementation method that 201310123595.5 Chinese invention patent has been announced a kind of high sunken light nanostructure one texture-etching side.This patent has first carried out heavily spreading and removing phosphorosilicate glass to silicon chip, then at the TiO of a surface-coated nanostructure
2or depositing Ti short annealing, utilize TiO
2light-catalyzed reaction realize one texture-etching side.Application number is that 201020223246.2 Chinese utility model patent has been announced a kind of silicon chip of solar cell for one texture-etching side.This patent, at a surface deposition silicon nitride film of silicon chip, utilizes the barrier effect of silicon nitride film to realize one texture-etching side.The cost that these two pieces of patents are brought for the chemicals, equipment and the production technology that realize one texture-etching side and increase is all not low, and this has certain limitation for large-scale application.Application number is that 201180009272.2 Chinese invention patent has been announced a kind of method for the one-sided veining of crystalline semiconductor substrate.This patent provides the mask layer with random pattern on a surface of silicon chip, then silicon chip is immersed in polishing solution, has the one side of mask layer to form making herbs into wool face, without the one side formation burnishing surface of mask layer.The making herbs into wool face that the method obtains has much relations with the random pattern that mask layer forms, and whether the randomness of this pattern can impact and also need further research the technology stability of large production.Have no at present the report that utilizes the masking action of liquid deposition silicon dioxide film to realize monocrystalline silicon piece one texture-etching side.
reference
1. Chinese Academy of Sciences Microelectronics Institute. a kind of implementation method [P] of high sunken light nanostructure one texture-etching side: China, 201310123595.5,2013-04-10.
2. Tianhe Optical Energy Co., Ltd., Changzhou. for the silicon chip of solar cell [P] of one texture-etching side: China, 201020223246.2,2010-06-10.
3. IMEC Corp., Catholic University of Louvain. the method for one-sided veining [P]: China, 201180009272.2,2011-02-11.
Summary of the invention
The object of the invention is to provide a kind of method of monocrystalline silicon piece one texture-etching side.For this reason, the technical solution used in the present invention is as described below:
Described method comprises the steps: a), at the single side surface deposition layer of silicon dioxide film of monocrystalline silicon piece; B), on the aforementioned monocrystalline silicon piece that deposits silicon dioxide film, carry out alkali making herbs into wool, in the single side surface due to this monocrystalline silicon piece, there is sheltering of aforementioned silicon dioxide film, therefore realize the lip-deep making herbs into wool of opposite side of this monocrystalline silicon piece.
The present invention compared with prior art has the following advantages:
The present invention can realize the one texture-etching side of monocrystalline silicon piece with simple deposition technique and conventional monocrystalline silicon alkali process for etching.The two-sided alkali making herbs into wool of routine with respect to monocrystalline silicon piece, the present invention has realized one texture-etching side, this greatly reduces unnecessary silicon chip loss and the loss of Woolen-making liquid chemicals, and the silicon chip loss of making herbs into wool section and the loss of Woolen-making liquid chemicals are reduced to 50% of conventional two-sided alkali making herbs into wool.And, with respect to other published monocrystalline silicon piece one texture-etching side technique, for realizing, the technique of monocrystalline silicon piece one texture-etching side is simple, chemicals is easily bought in the present invention, reactive ion etching method and the high cost of floating method have been overcome, the defect such as the efficiency of laminated layer method is too low has good actual application value.
Accompanying drawing explanation
Fig. 1 is the process chart of realizing of monocrystalline silicon piece one texture-etching side of the present invention.
Fig. 2 is the scanning electron microscope diagram sheet in silicon chip cross section after embodiment 1 monocrystalline silicon piece common process making herbs into wool.
Fig. 3 is the scanning electron microscope diagram sheet in silicon chip cross section after embodiment 2 making herbs into wool.As seen from the figure, silicon chip upper surface has obtained good pyramid matte, and silicon chip lower surface has retained the pattern of former silicon chip.
Fig. 4 is the scanning electron microscope diagram sheet of the former silicon chip surface of monocrystalline silicon piece.
Fig. 5 is the scanning electron microscope diagram sheet of silicon wafer wool making face after embodiment 2 making herbs into wool.
Fig. 6 is the scanning electron microscope diagram sheet of the non-making herbs into wool face of silicon chip after embodiment 2 making herbs into wool.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail:
The present invention is a kind of method of monocrystalline silicon piece one texture-etching side, and described method comprises the steps: a), at the single side surface deposition layer of silicon dioxide film of monocrystalline silicon piece; B), on the aforementioned monocrystalline silicon piece that deposits silicon dioxide film, carry out alkali making herbs into wool, in the single side surface due to this monocrystalline silicon piece, there is sheltering of aforementioned silicon dioxide film, therefore realize the lip-deep making herbs into wool of opposite side of this monocrystalline silicon piece.
Described step a) specifically comprises: a1), by liquid deposition, in the both sides of described monocrystalline silicon face, all deposit layer of silicon dioxide film; A2), the wherein silicon dioxide film of a side surface that both side surface is all deposited to the monocrystalline silicon piece of silicon dioxide film washes away.
Described step a1) liquid deposition is to adopt oversaturated hexafluorosilicic acid solution, utilizes the hydrolysis of hexafluorosilicic acid to realize the deposition of silicon dioxide.
Step a1) concrete operation step comprises:
1) in hexafluorosilicic acid solution, add excess silicic acid powder or SiO 2 powder, stirring at normal temperature (for example three hours), forms silicic acid or the oversaturated hexafluorosilicic acid solution of silicon dioxide;
2) filter hexafluorosilicic acid solution and remove remaining silicic acid powder or SiO 2 powder, in the hexafluorosilicic acid solution after filtering, add deionized water and boric acid powder, obtain liquid deposition growth-promoting media, stir and be warming up to required temperature;
3) monocrystalline silicon piece is immersed to above-mentioned solution, after double-sided surface all reaches suitable thickness, take out this monocrystalline silicon piece, by washed with de-ionized water, after drying up, obtain the monocrystalline silicon piece that two surfaces all deposit silicon dioxide film.
Step a1) concentration of hexafluorosilicic acid solution used is 35 ~ 40 wt.%, and the purity of silicic acid powder, SiO 2 powder, boric acid powder is all greater than 99.0%.
Step a1) consumption of silicic acid powder used or SiO 2 powder is 4% ~ 6% of hexafluorosilicic acid solution quality, in liquid deposition growth-promoting media (oversaturated hexafluorosilicic acid solution), the molar concentration of hexafluorosilicic acid is 1 ~ 2.5 mol/L, the molar concentration of boric acid is 2 ~ 10 mmol/L, and the temperature of reaction is 50 ~ 70 ℃.
The thickness of silicon dioxide film step a1) obtaining is 50 ~ 150 nm.
Step a2) specifically comprise, what liquid deposition obtained is the monocrystalline silicon piece that both side surface all deposits silicon dioxide film, for realizing one texture-etching side, the wherein silicon dioxide film of a side surface that need all deposit with the hydrofluoric acid solution that concentration is 0.5 ~ 5 wt.% the monocrystalline silicon piece of silicon dioxide film to both side surface cleans, by its removal.
Step b) is the conventional alkali process for etching that monocrystaline silicon solar cell sheet is produced.
Step b) is after one texture-etching side, and the silicon dioxide film on opposite side surface, without adopting additional technique to remove, is removed in the subsequent technique that this silicon dioxide film can be produced at monocrystaline silicon solar cell sheet voluntarily.
In sum, the invention provides a kind of method of monocrystalline silicon piece one texture-etching side.Described method is mainly to utilize liquid deposition (LPD) technology, at a side surface deposition of silica film of monocrystalline silicon piece, utilizes the masking action of silicon dioxide film to realize the one texture-etching side of monocrystalline silicon piece.For realizing, the technique of monocrystalline silicon piece one texture-etching side is simple, chemicals is easily bought in the present invention, has good actual application value.
For meeting the requirement of monocrystalline making herbs into wool, the present invention adopts aforementioned liquid deposition condition, both realized the fast deposition (deposition velocity is greater than 5nm/min) of silicon dioxide film, again by the film thickness monitoring of silicon dioxide film at 50 ~ 150nm, realized good masking action, taken into account production efficiency and one texture-etching side quality, also very quick while washing away wherein one side, greatly improved production efficiency.
Be further elaborated by the following examples.
Embodiment 1 provides a comparative example, for not applying the conventional etching method of technique of the present invention:
Adopt following steps:
1), preparation alkali Woolen-making liquid: under stirring action, 400g KOH, 470mL monoTEX-M, 90mL monoTEX-D and 20L deionized water are mixed, be then warming up to 75
oc;
2), making herbs into wool: monocrystalline silicon piece is immersed in above-mentioned alkali Woolen-making liquid and carries out making herbs into wool, and making herbs into wool temperature is 75
oc, the making herbs into wool time is 12min.
Fig. 2 has provided the scanning electron microscope diagram sheet in silicon chip cross section after the fine-hair maring using monocrystalline silicon slice obtaining by the present embodiment, and from picture, known two surfaces have all obtained the matte of Pyramid.
The embodiment of embodiment 2 for carrying out making herbs into wool according to technological process shown in Fig. 1:
Adopt following steps:
A), preparation supersaturation hexafluorosilicic acid solution: be to add 600g silicic acid powder in 35 wt.% hexafluorosilicic acid solution to 15kg concentration, stirring at normal temperature 3 hours, forms the oversaturated hexafluorosilicic acid solution of silicic acid;
B), preparation liquid deposition growth-promoting media: remove by filter remaining silicic acid powder, add 12.7kg deionized water and 7.5g boric acid powder in filtrate, stir and be warming up to 60
oC(that is: in the growth-promoting media preparing, the molar concentration of described hexafluorosilicic acid is that the molar concentration of 1.5 mol/L, described boric acid is 5 mmol/L);
C), liquid deposition: monocrystalline silicon piece (I) is immersed to above-mentioned solution, take out silicon chip after thickness reaches 120nm, by washed with de-ionized water, obtain the monocrystalline silicon piece (II) that both side surface all deposits silicon dioxide film after drying up;
D), hydrofluoric acid clean: clean a side surface of above-mentioned silicon chip with the hydrofluoric acid solution that concentration is 2 wt.%, remove the silicon dioxide film (III) of this side surface;
E), making herbs into wool: the method that above-mentioned silicon chip is provided by embodiment 1 is carried out making herbs into wool, obtains the one-sided monocrystalline silicon piece (IV) that has matte.
After one texture-etching side, the silicon dioxide film on opposite side surface, without adopting additional technique to remove, is removed (V) in the subsequent technique that this silicon dioxide film can be produced at monocrystaline silicon solar cell sheet voluntarily.
Fig. 3, Fig. 5, Fig. 6 have provided the scanning electron microscope diagram sheet of silicon chip after the fine-hair maring using monocrystalline silicon slice obtaining by the present embodiment, and Fig. 4 has provided the scanning electron microscope diagram sheet of former silicon chip before making herbs into wool.As seen from the figure, by the method for the present embodiment, carry out making herbs into wool, silicon chip upper surface has obtained good pyramid matte, and silicon chip lower surface has retained the pattern of former silicon chip.
Embodiment 3
Adopt following steps:
A), preparation supersaturation hexafluorosilicic acid solution: be to add 900g SiO 2 powder in 40 wt.% hexafluorosilicic acid solution to 15kg concentration, stirring at normal temperature 3 hours, forms the oversaturated hexafluorosilicic acid solution of silicon dioxide;
B), preparation liquid deposition growth-promoting media: remove by filter remaining SiO 2 powder, add 5.4kg deionized water and 10.3g boric acid powder in filtrate, stir and be warming up to 50
oC(that is: in the growth-promoting media preparing, the molar concentration of described hexafluorosilicic acid is that the molar concentration of 2.5 mol/L, described boric acid is 10 mmol/L);
C), liquid deposition: monocrystalline silicon piece is immersed to above-mentioned solution, take out silicon chip after thickness reaches 50nm, by washed with de-ionized water, obtain the monocrystalline silicon piece that both side surface all deposits silicon dioxide film after drying up;
D), hydrofluoric acid clean: clean a side surface of above-mentioned silicon chip with the hydrofluoric acid solution that concentration is 0.5 wt.%, remove the silicon dioxide film of this side surface;
E), making herbs into wool: the method that above-mentioned silicon chip is provided by embodiment 1 is carried out making herbs into wool.
Monocrystalline silicon piece upper surface after making herbs into wool has obtained good pyramid matte, and lower surface has retained the pattern of former silicon chip.
Embodiment 4
Adopt following steps:
A), preparation supersaturation hexafluorosilicic acid solution: be to add 600g silicic acid powder in 38 wt.% hexafluorosilicic acid solution to 12kg concentration, stirring at normal temperature 3 hours, forms the oversaturated hexafluorosilicic acid solution of silicic acid;
B), preparation liquid deposition growth-promoting media: remove by filter remaining silicic acid powder, add 22.4kg deionized water and 3.9g boric acid powder in filtrate, stir and be warming up to 70
oC(that is: in the growth-promoting media preparing, the molar concentration of described hexafluorosilicic acid is that the molar concentration of 1 mol/L, described boric acid is 2 mmol/L);
C), liquid deposition: monocrystalline silicon piece is immersed to above-mentioned solution, take out silicon chip after thickness reaches 150nm, by washed with de-ionized water, obtain the monocrystalline silicon piece that both side surface all deposits silicon dioxide film after drying up;
D), hydrofluoric acid clean: clean a side surface of above-mentioned silicon chip with the hydrofluoric acid solution that concentration is 5 wt.%, remove the silicon dioxide film of this side surface;
E), making herbs into wool: the method that above-mentioned silicon chip is provided by embodiment 1 is carried out making herbs into wool.
Monocrystalline silicon piece upper surface after making herbs into wool has obtained good pyramid matte, and lower surface has retained the pattern of former silicon chip.
The present invention is not limited in above-mentioned execution mode, can not limit scope of the present invention with this, and the equivalence done according to the present patent application the scope of the claims and description changes and modifies, within all should being interpreted as belonging to the scope that patent of the present invention contains.
Claims (10)
1. a method for monocrystalline silicon piece one texture-etching side, it is characterized in that described method comprise the steps: a), at the single side surface deposition layer of silicon dioxide film of monocrystalline silicon piece; B), on the aforementioned monocrystalline silicon piece that deposits silicon dioxide film, carry out alkali making herbs into wool, in the single side surface due to this monocrystalline silicon piece, there is sheltering of aforementioned silicon dioxide film, therefore realize the lip-deep making herbs into wool of opposite side of this monocrystalline silicon piece.
2. the method for a kind of monocrystalline silicon piece one texture-etching side as claimed in claim 1, is characterized in that described step a) specifically comprises: a1), by liquid deposition, in the both sides of described monocrystalline silicon face, all deposit layer of silicon dioxide film; A2), the wherein silicon dioxide film of a side surface that both side surface is all deposited to the monocrystalline silicon piece of silicon dioxide film washes away.
3. the method for a kind of monocrystalline silicon piece one texture-etching side as claimed in claim 2, is characterized in that described step a1) liquid deposition be to adopt oversaturated hexafluorosilicic acid solution, utilize the hydrolysis of hexafluorosilicic acid to realize the deposition of silicon dioxide.
4. a kind of method of monocrystalline silicon piece one texture-etching side as claimed in claim 2 or claim 3, is characterized in that step a1) concrete operation step comprise:
1) in hexafluorosilicic acid solution, add excess silicic acid powder or SiO 2 powder, stirring at normal temperature, forms silicic acid or the oversaturated hexafluorosilicic acid solution of silicon dioxide;
2) filter hexafluorosilicic acid solution and remove remaining silicic acid powder or SiO 2 powder, in the hexafluorosilicic acid solution after filtering, add deionized water and boric acid powder, obtain liquid deposition growth-promoting media, stir and be warming up to required temperature;
3) monocrystalline silicon piece is immersed to above-mentioned solution, after double-sided surface all reaches suitable thickness, take out this monocrystalline silicon piece, by washed with de-ionized water, after drying up, obtain the monocrystalline silicon piece that two surfaces all deposit silicon dioxide film.
5. the method for a kind of monocrystalline silicon piece one texture-etching side as claimed in claim 4, is characterized in that step a1) concentration of hexafluorosilicic acid solution used is 35 ~ 40 wt.%, the purity of silicic acid powder, SiO 2 powder, boric acid powder is all greater than 99.0%.
6. the method for a kind of monocrystalline silicon piece one texture-etching side as claimed in claim 4, it is characterized in that step a1) silicic acid powder used or the consumption of SiO 2 powder be 4% ~ 6% of hexafluorosilicic acid solution quality, in liquid deposition growth-promoting media, the molar concentration of hexafluorosilicic acid is 1 ~ 2.5 mol/L, the molar concentration of boric acid is 2 ~ 10 mmol/L, and the temperature of reaction is 50 ~ 70 ℃.
7. the method for a kind of monocrystalline silicon piece one texture-etching side as claimed in claim 4, is characterized in that step a1) thickness of the silicon dioxide film that obtains is 50 ~ 150 nm.
8. the method for a kind of monocrystalline silicon piece one texture-etching side as claimed in claim 2, it is characterized in that step a2) specifically comprise, by concentration, be that the hydrofluoric acid solution of 0.5 ~ 5 wt.% all deposits the monocrystalline silicon piece of the silicon dioxide film wherein silicon dioxide film of a side surface to both side surface cleans, by its removal.
9. the method for a kind of monocrystalline silicon piece one texture-etching side as claimed in claim 1, is characterized in that step b) is the conventional alkali process for etching that monocrystaline silicon solar cell sheet is produced.
10. the method for a kind of monocrystalline silicon piece one texture-etching side as claimed in claim 1, it is characterized in that step b) is after one texture-etching side, the silicon dioxide film on opposite side surface, without adopting additional technique to remove, is removed in the subsequent technique that this silicon dioxide film can be produced at monocrystaline silicon solar cell sheet voluntarily.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103643304A (en) * | 2013-12-18 | 2014-03-19 | 上饶光电高科技有限公司 | Method for activating polysilicon texturing liquid medicine |
| CN104201247A (en) * | 2014-09-11 | 2014-12-10 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer texturing process |
| CN105470345A (en) * | 2015-09-28 | 2016-04-06 | 阳光大地（福建）新能源有限公司 | Preparation method of ultrathin polysilicon solar cell sheet |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751377A (en) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | Wet surface processing technique used for manufacturing high efficiency crystalline silicon solar cells |
| CN102800758A (en) * | 2012-08-28 | 2012-11-28 | 夏洋 | Biomimetic preparation method for passivation layer on surface of crystalline silicon solar cell |
| JP2013171865A (en) * | 2012-02-17 | 2013-09-02 | Mitsubishi Electric Corp | Surface roughening method of single crystal silicon substrate and manufacturing method of photovoltaic device |
-
2013
- 2013-11-13 CN CN201310566233.3A patent/CN103972325A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013171865A (en) * | 2012-02-17 | 2013-09-02 | Mitsubishi Electric Corp | Surface roughening method of single crystal silicon substrate and manufacturing method of photovoltaic device |
| CN102751377A (en) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | Wet surface processing technique used for manufacturing high efficiency crystalline silicon solar cells |
| CN102800758A (en) * | 2012-08-28 | 2012-11-28 | 夏洋 | Biomimetic preparation method for passivation layer on surface of crystalline silicon solar cell |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103643304A (en) * | 2013-12-18 | 2014-03-19 | 上饶光电高科技有限公司 | Method for activating polysilicon texturing liquid medicine |
| CN104201247A (en) * | 2014-09-11 | 2014-12-10 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer texturing process |
| CN105470345A (en) * | 2015-09-28 | 2016-04-06 | 阳光大地（福建）新能源有限公司 | Preparation method of ultrathin polysilicon solar cell sheet |
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