CN103972108B - The preparation method of PMOS source drain region ion injection method, PMOS - Google Patents
The preparation method of PMOS source drain region ion injection method, PMOS Download PDFInfo
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- CN103972108B CN103972108B CN201410215785.4A CN201410215785A CN103972108B CN 103972108 B CN103972108 B CN 103972108B CN 201410215785 A CN201410215785 A CN 201410215785A CN 103972108 B CN103972108 B CN 103972108B
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- fluorine
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- boron
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- 238000002347 injection Methods 0.000 title claims abstract description 65
- 239000007924 injection Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 46
- 239000011737 fluorine Substances 0.000 claims abstract description 46
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052796 boron Inorganic materials 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 229910006160 GeF4 Inorganic materials 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 15
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 abstract description 12
- 230000007797 corrosion Effects 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 6
- 150000002500 ions Chemical class 0.000 description 20
- 230000007547 defect Effects 0.000 description 14
- 239000007789 gas Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- PQIOSYKVBBWRRI-UHFFFAOYSA-N methylphosphonyl difluoride Chemical group CP(F)(F)=O PQIOSYKVBBWRRI-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The present invention provides PMOS source drain region ion injection method, including：First, boron injection is carried out to the source-drain area in Semiconductor substrate；Then, fluorine injection is carried out to source-drain area.The present invention also provides the preparation methods of PMOS device.The ion injection method in PMOS source drain region of the present invention and the preparation method of PMOS device, being injected by using boron replaces existing boron difluoride to inject, and reduces the dosage of follow-up fluorine injection, so as to effectively alleviate the fluorine harm in substrate, reduce the corrosion to photoresist, improve the quality of device.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of PMOS source drain region ion injection method and including
The preparation method for the PMOS device that this source-drain area ion injection method carries out.
Background technology
In the high price technique of semiconductor manufacturing, when carrying out alms giver/recipient element injection, commonly using non-donor/by
Host element progress is co-implanted, to reach required auxiliaring effect.
Most common auxiliary injection member is known as germanium, silicon, carbon, fluorine, nitrogen etc..The effect of various elements differs and other, such as
Germanium and silicon are mainly used in pre-amorphous, and carbon is mainly used in inhibition diffusion, and fluorine is mainly used in that improve negative temperature bias unstable
Qualitative (NBTI) and inhibit short-channel effect (SCE).
In the source-drain area injection of PMOS, often using boron difluoride (BF2) and fluorine (F) carry out it is co-implanted because
The introducing of fluorine can control boron penetration gate oxide to cause defect, so as to improve Negative Bias Temperature Instability effect.
The pattern schematic diagram of substrate surface Defect Scanning before attached drawing Fig. 1 and Fig. 2, Fig. 1 are boron difluoride injection is please referred to,
Before boron difluoride is injected, surface defect scanning is carried out to substrate, defects count is generally in controlled range.Fig. 2 is through difluoro
After fluorine injection, surface defect is carried out to substrate for the pattern schematic diagram of substrate surface Defect Scanning after change boron and fluorine injection
Scanning often finds a large amount of defects occur on substrate, particularly there is a large amount of defects on a photoresist.This defect is due to warp
Two step ion implantation process, fluorine harm, and condensed on the photoresist closed on, office caused by chemical reaction occurs with photoresist
Corrode in portion.
Specifically, the reason of generating a large amount of fluorine harms is the injection of first step boron difluoride and the injection of second step fluorine all
Contribute to the dosage of fluorine.The accumulated dose of fluorine is too many, will be more than the solid solubility in silicon substrate, cause a large amount of fluorine in gaseous form
Escape out substrate.The fluorine escaped out condenses on the photoresist closed on to be accumulated and reacts with it, and then photoresist is caused to corrode,
Referring to Fig. 3, the scanning electron microscope (SEM) photograph of the photoresist surface defect after being injected for fluorine, in figure, 301 represent condensation defects, and 302 represent
Photoresist.The corrosion default that this accumulation of condensation on a photoresist generates can seriously affect the performance of device.
Invention content
In order to overcome problem above, the purpose of the present invention is under conditions of ensuring not influence negative temperature bias stability,
The ion injection method in existing PMOS source drain region is improved, reduces fluorine implantation dosage, alleviates fluorine harm, reduces the corrosion of photoresist
Defect, so as to improve PMOS device quality.
To achieve these goals, the present invention provides a kind of PMOS source drain region ion injection method, including：First,
Boron injection is carried out to the source-drain area in Semiconductor substrate；Then, fluorine injection is carried out to the source-drain area.
Preferably, the dosage of the boron injection is 1*E15-3*E15.
Preferably, the dosage of the fluorine injection is 1*E15-3*E15.
Preferably, the gas that the boron injection uses is B10H22、C2B10H12It is one or more.
Preferably, 10-20 DEG C of the temperature used during the boron injection, pressure are held in the palm no more than 5*E-5, gas flow 0.5-
1.5sccm。
Preferably, the gas that the fluorine injection uses is BF3、GeF4It is one or more.
Preferably, 10-20 DEG C of the temperature used during the fluorine injection, pressure are held in the palm no more than 5*E-5, gas flow 0.5-
1.5sccm。
To achieve these goals, the present invention also provides a kind of preparation method of PMOS device, including：Using above-mentioned
Ion injection method described in any one carries out source-drain area ion implanting.
The ion injection method in the PMOS source drain region of the present invention injects by using boron and existing boron difluoride is replaced to inject,
Reduce the dosage of follow-up fluorine injection, so as to effectively alleviate the fluorine harm in substrate, reduce the corrosion to photoresist, improve
The quality of device.
Description of the drawings
The pattern schematic diagram of substrate surface Defect Scanning before Fig. 1 is boron difluoride injection
Fig. 2 is the pattern schematic diagram of the substrate surface Defect Scanning after boron difluoride and fluorine injection
Fig. 3 is the flow diagram of the PMOS source drain region ion injection method of the preferred embodiment of the present invention
Specific embodiment
To make present disclosure more clear and easy to understand, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
The PMOS source drain region ion injection method of the present invention is made below with reference to attached drawing 3 and specific embodiment further detailed
It describes in detail bright.It should be noted that attached drawing uses very simplified form, using non-accurate ratio, and only to convenient, clear
Ground achievees the purpose that aid in illustrating the present embodiment.
As previously described, because existing PMOS source drain region ion implanting, generally use boron difluoride and fluorine injection, the first step
Boron difluoride injects and second step fluorine injects the dosage for all contributing to fluorine.The accumulated dose of fluorine is too many, will be more than in silicon substrate
Solid solubility causes a large amount of fluorine to escape out substrate in gaseous form.The fluorine escaped out condenses accumulation simultaneously on the photoresist closed on
It reacts with it, and then photoresist is caused to corrode.For this purpose, the present invention is injected using boron injection instead of boron difluoride, to subtract
Few fluorine implantation dosage alleviates the corrosion default that fluorine harm causes photoresist.
Referring to Fig. 3, the flow signal of the PMOS source drain region ion injection method for a preferred embodiment of the invention
Figure, PMOS source drain region ion injection method of the invention include：
Step 01, boron injection is carried out to the source-drain area in Semiconductor substrate；
Specifically, Semiconductor substrate can be the arbitrary Semiconductor substrate with active area, shallow trench can be included
Isolation structure, grid, side wall, grid oxygen etc. form the structure of PMOS device, the invention is not limited in this regard.At one of the present invention
In preferred embodiment, Semiconductor substrate has N well regions and fleet plough groove isolation structure, grid oxide layer, grid and side wall, and side wall can be
Multilayer side wall, for example, the ONO sides that ON side walls and oxide layer-nitride layer-oxide layer that oxide-nitride is formed are formed
Wall.
In a preferred embodiment of the present invention, the dosage of boron injection can be 1*E15-3*E15, preferably, can be with
For 2*E15；The gas that boron injection uses is B10H22、C2B10H12It is one or more, boron injection specific process parameter can root
Factually border technological requirement is set, in of the invention preferred embodiment, 10-20 DEG C of temperature that boron uses when injecting, and pressure
It is held in the palm no more than 5*E-5, gas flow 0.5-1.5sccm；For example, the temperature used is 15 DEG C, pressure is held in the palm for 5*E-5, gas
Flow is 0.8sccm, but this is not used in limitation of the present invention.
Step 02, fluorine injection is carried out to source-drain area.
Specifically, existing process conditions may be used to carry out in fluorine injection, the invention is not limited in this regard.In the present invention
A preferred embodiment in, fluorine injection dosage can be 1*E15-3*E15, preferably, can be 2*E15；Fluorine injection is adopted
Gas can be BF3、GeF4It is one or more.Its specific process parameter can be set according to actual process requirement.
In the preferred embodiment of the present invention, 10-20 DEG C of temperature using when fluorine injects, pressure is no more than 5*E-5 supports, gas flow
For 0.5-1.5sccm；For example, the temperature used is 15 DEG C, pressure is held in the palm for 5*E-5, gas flow 0.8sccm, but this does not have to
In limitation of the present invention.
Based on the ion injection method of above-mentioned source-drain area, the present invention also provides a kind of preparation method of PMOS device, tools
Body, procedure below can be included：
N well regions are formed in the semiconductor substrate；
Fleet plough groove isolation structure is formed in N well regions；
Grid is formed, carries out shallow Doped ions injection；
Side wall is formed, carries out source-drain area ion implanting；
It can include carrying out the ion implanting of source-drain area using above-mentioned ion injection method to the ion implanting of source-drain area,
This present invention is repeated no more.
After ion implantation, can also include forming contact hole, filling metal, planarization process etc. for completing PMOS
The technical process of device.Since those of ordinary skill in the art could be aware that the subsequent process of existing PMOS device, this hair
It is bright that this is repeated no more.
In conclusion the ion injection method in the PMOS source drain region of the present invention, injects by using boron and replaces existing difluoro
Change boron injection, reduce the dosage of follow-up fluorine injection, so as to effectively alleviate the fluorine harm in substrate, reduce to photoresist
Corrosion improves the quality of device.
Although the present invention is disclosed as above with preferred embodiment, the right embodiment illustrate only for the purposes of explanation and
, the present invention is not limited to, if those skilled in the art can make without departing from the spirit and scope of the present invention
Dry changes and retouches, and the protection domain that the present invention is advocated should be subject to described in claims.
Claims (5)
1. a kind of PMOS source drain region ion injection method, which is characterized in that including：First, to the source-drain area in Semiconductor substrate
Carry out boron injection；Then, fluorine injection is carried out to the source-drain area；The gas that the boron injection uses is not fluorine-containing gas；Boron
The dosage of injection is for 2*E15-3*E15 and not comprising 2*E15；10-20 DEG C of the temperature used during the boron injection, pressure is not more than
5*E-5 is held in the palm, gas flow 0.5-1.5sccm；10-20 DEG C of the temperature used during the fluorine injection, pressure are not more than 5*E-5
Support, gas flow 0.5-1.5sccm.
2. ion injection method according to claim 1, which is characterized in that the dosage of the fluorine injection is 1*E15-3*
E15。
3. ion injection method according to claim 1, which is characterized in that the gas that the boron injection uses is B10H22、
C2B10H12It is one or more.
4. ion injection method according to claim 1, which is characterized in that the gas that the fluorine injection uses is BF3、
GeF4It is one or more.
5. a kind of preparation method of PMOS device, which is characterized in that including：Using described in claim 1-4 any one from
Sub- method for implanting carries out source-drain area ion implanting.
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| CN201410215785.4A CN103972108B (en) | 2014-05-20 | 2014-05-20 | The preparation method of PMOS source drain region ion injection method, PMOS |
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| CN201410215785.4A CN103972108B (en) | 2014-05-20 | 2014-05-20 | The preparation method of PMOS source drain region ion injection method, PMOS |
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| CN103972108A CN103972108A (en) | 2014-08-06 |
| CN103972108B true CN103972108B (en) | 2018-06-22 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104241106A (en) * | 2014-09-02 | 2014-12-24 | 上海华力微电子有限公司 | PMOS source and drain region ion implantation method and PMOS device manufacturing method |
| CN109103111B (en) * | 2018-09-27 | 2022-05-31 | 武汉新芯集成电路制造有限公司 | Forming method of PMOS structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101286527A (en) * | 2007-04-12 | 2008-10-15 | 上海宏力半导体制造有限公司 | PMOS structure with dual ion implantation and method therefor |
| CN101752255A (en) * | 2008-12-19 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of p-channel metal oxide semiconductor (PMOS) transistor and grid doping method |
| US8669538B1 (en) * | 2013-03-12 | 2014-03-11 | Varian Semiconductor Equipment Associates, Inc. | Method of improving ion beam quality in an implant system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070107841A1 (en) * | 2000-12-13 | 2007-05-17 | Semequip, Inc. | Ion implantation ion source, system and method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101286527A (en) * | 2007-04-12 | 2008-10-15 | 上海宏力半导体制造有限公司 | PMOS structure with dual ion implantation and method therefor |
| CN101752255A (en) * | 2008-12-19 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of p-channel metal oxide semiconductor (PMOS) transistor and grid doping method |
| US8669538B1 (en) * | 2013-03-12 | 2014-03-11 | Varian Semiconductor Equipment Associates, Inc. | Method of improving ion beam quality in an implant system |
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