CN103956920B - Static threshold eliminates and eliminates, with dynamic threshold, the voltage-doubler rectifier combined - Google Patents
Static threshold eliminates and eliminates, with dynamic threshold, the voltage-doubler rectifier combined Download PDFInfo
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Abstract
The invention belongs to energy harvesting technical field, a kind of static threshold eliminates and eliminates, with dynamic threshold, the voltage-doubler rectifier combined.Static threshold technology for eliminating and dynamic threshold technology for eliminating are combined by the present invention, change the equivalent threshold value of rectifier tube with direct current biasing, to increase rectifier tube forward conduction electric current；Rectifier tube is turned off, to reduce rectifier tube reverse leakage current by anti-phase radiofrequency signal.The present invention can realize the high efficiency power conversion under the input of ultralow radio-frequency power, and the good impedance match in wide input power bandwidth, thus improves the energy transmission efficiency in wide power band.Apply the present invention to the fields such as RF identification (RFID), label reading and writing sensitivity can be greatly improved, thus improve its system sensitivity.
Description
Technical field
The invention belongs to energy harvesting technical field, the transducer of a kind of AC power to dc power, be also referred to as
For voltage-doubler rectifier.
Background technology
Wireless energy transfer and acquiring technology are widely used in numerous areas, and normal mode is, antenna induction alternating voltage
Signal, then by commutator or voltage-doubler rectifier, AC power is converted to dc power.
Along with the development of the technology such as RF identification (RFID), the power conversion efficiency of wireless energy transfer becomes increasingly to weigh
Want.In some applications, such as the remote mode of operation of super high frequency radio frequency identification, it is desirable to can be at ultralow radio-frequency power
The conversion of high efficiency power is realized under (such as-20dBm or less) input.Power conversion efficiency to be improved, needs to increase positive guide
Galvanization, reduces reverse leakage current.WithRepresent input radio frequency power, useRepresent RF signal amplitude, useRepresent equivalence
Parallel resistance；According to, at equivalent parallel resistanceIt is basically unchanged, input radio frequency powerTime the least, radiofrequency signal
AmplitudeWill be the least, so that being difficult to overcome the dead band of rectifier tube, thus extremely low power conversion efficiency can only be obtained.Use Q
Represent the quality factor of Tag Radio Frequency port, useRepresent the angular frequency of mid frequency, useRepresent equivalent parallel electric capacity；According to, certain frequency and band requirement will be met,It is necessarily less than a certain particular value, equivalent parallel electric capacitySubtract
Little is limited, and in order to ensure the concordance of product, equivalent parallel electric capacityMust be usually greater than a certain particular value, the most just
It is to say equivalent parallel resistanceMaximum is had to limit.
In sum, along with input power is more and more less, always meet to RF signal amplitudeThe least and cannot overcome
The problem in rectification dead band.According to more advanced technique or special process, it is possible to obtain the rectifier tube that threshold value is lower, can be one
Determine in degree, to alleviate above-mentioned contradiction, but the increase of cost can be brought, and performance improvement is also limited.If for certain
Technique, by changing circuit structure, it is achieved relatively low rectifier tube equivalence threshold value, equally realizes inputting at ultralow radio-frequency power
Under high efficiency power conversion.
Next introduce two kinds of circuit structures being typically used for changing rectifier tube equivalence threshold value, i.e. static threshold eliminates skill
Art and dynamic threshold technology for eliminating:
Fig. 1 is a kind of commutator being referred to as " static threshold elimination ", by arranging DC bias signal 4, reduces rectifier tube
Equivalent threshold value.Direct current inputs VL-1 ground connection or meets previous stage direct current output VH-2, and direct current output VH-2 connects rear stage direct current
Inputting VL-1 or finally export as commutator, single-ended radio frequency signal RF-3 provides radio-frequency power.The problem of this circuit structure
It is, reduces threshold value, while namely increasing forward conduction electric current, also increase reverse leakage current, power conversion efficiency
Promote very limited.
Fig. 2 is a kind of commutator being referred to as " dynamic threshold elimination ", and difference radio-frequency signal 5 and difference radio-frequency signal 6 provide
Radio-frequency power.This circuit structure not only reduces the equivalent threshold value of rectifier tube, and can reduce reverse leakage current.Positive guide
Time logical, grid and source, drain dias are under anti-phase ac voltage signal, and the opening point of rectifier tube shifts to an earlier date in time domain so that conducting
Angle increases；In dead band, anti-phase ac voltage signal is biased to negative sense to rectifier tube so that the shutoff of rectifier tube is the most thorough
The end, reverse leakage current is greatly reduced.
But for the input of ultralow radio-frequency power and the least RF signal amplitude, the fully differential dynamic threshold shown in Fig. 2 disappears
Except rectifier structure yet suffers from problems with:
1) along with the further reduction of input radio frequency power, the reduction of RF signal amplitude, this circuit structure is still difficult to
Overcoming rectification dead band, the angle of flow reduces, rectification efficiency rapid decrease；
2) along with the further reduction of input radio frequency power, the reduction of RF signal amplitude, rectifier tube conducting resistance increases,
Rectification
Device equivalent parallel resistanceIncrease, it is difficult to meet frequency bandwidth requirements ().
It addition, apply for some, need in input power excursion, all obtain higher energy transmission efficiency, as
The read-write sensitivity of RF identification, and wireless charging device.Conventional rectifier technology often can only be in minimum input of interest
The high efficiency energy transmission that under power condition, optimization circuit structure and parameter are desirably to obtain under this input power, and when input power changes
During change, rectifier tube duty changes, and equivalent input impedance changes, and loses big because of the impedance mismatching between antenna and commutator
Amount power, the relation of the common power conversion efficiency including impedance mismatching and input power is as shown in Figure 3.In fact, input work
Rate increases, and RF signal amplitude increases, and power conversion efficiency should promote, so damaging for the power in wide input power range
Losing, impedance mismatching is a very important factor.If a kind of circuit structure can be proposed so that the input impedance of commutator not with
Input power changes, or the least change, then can increase substantially the energy transmission effect in wide input power range
Rate.
Summary of the invention
It is an object of the invention to propose a kind of commutator, turn realizing the high efficiency power under the input of ultralow radio-frequency power
Change, and the impedance matching under wide power bandwidth, thus realize the transmission of more preferable energy.
The present invention is applied to RF identification, not only can improve the reading and writing sensitivity of passive label simultaneously, it is also possible to be half
Active label provides higher charging ability.
For the defect of above-mentioned " static threshold elimination " technology He " dynamic threshold elimination " technology, excellent in conjunction with two kinds of technology
Gesture, the present invention proposes a kind of static threshold and eliminates the voltage-doubler rectifier structure combined with dynamic threshold elimination；Its basic structure
As follows:
VS (Voltage Shift) module is added on the basis of the basic dynamic threshold shown in Fig. 2 eliminates rectification circuit,
To control the direct grid current level of rectifier tube；In VS module, DC bias signal and radiofrequency signal superposition are obtained by coupling circuit
To rectifier tube grid-control voltage VC.
The voltage-doubler rectifier that the present invention provides, for differential configuration, (2 NMOS are whole by four rectifier tubes for single stage power conversion unit
Flow tube 11 and 2 PMOS rectifier tubes 12) and four VS (Voltage Shift) module (biasing of 2 NMOS rectifier tubes of correspondence
Module VSN 13 and biasing module VSP 14 of 2 PMOS rectifier tubes) constitute, there are two radio frequency electric capacity coupled RF signals.
NMOS rectifier tube 11 substrate B ground connection, source S meets direct current input VL-1, drain terminal D and is connected with corresponding PMOS rectifier tube drain terminal D, mark
Number it is 7 and 8；The control signal that grid G produces with biasing module VSN 13 of NMOS rectifier tube is connected；PMOS rectifier tube 12 substrate
B meets direct current output VH-2, and source S meets direct current output VH-2, drain terminal D and is connected with corresponding NMOS rectifier tube 11 drain terminal D, is numbered
7 and 8, the control signal that grid G produces with biasing module VSP 14 of PMOS rectifier tube is connected；The biasing module of NMOS rectifier tube
VSN 13 is connected (as DC reference), with difference radio-frequency signal RF+(5 with direct current input VL-1) or difference radio-frequency signal RF-
(6) it is connected, is connected with NMOS DC bias signal 9；Biasing module VSP 14 of PMOS rectifier tube is connected with direct current output VH-2
(as DC reference), with difference radio-frequency signal RF+(5) or difference radio-frequency signal RF-(6) be connected, believe with PMOS direct current biasing
Numbers 10 are connected；At difference radio-frequency signal RF+(5) and PMOS rectifier tube drain terminal 7 between access radio frequency electric capacity, at difference radio-frequency signal
RF-(6) radio frequency electric capacity, the input channel of the two radio frequency electric capacity composition radio-frequency power and are accessed between PMOS rectifier tube drain terminal 8.
Wherein, NMOS DC bias signal 9 provides direct current biasing, NMOS rectifier tube with direct current input VL-1 for datum
Biasing module VSN 13 by gained direct current biasing and difference radio-frequency signal RF+(5) or difference radio-frequency signal RF-(6) superimposed,
Obtain the grid control signal of NMOS rectifier tube 11.PMOS DC bias signal 10 provides with direct current output VH-2 for datum
Direct current biasing, biasing module VSP 14 of PMOS rectifier tube is by gained direct current biasing and difference radio-frequency signal RF+(5) or difference penetrate
Frequently signal RF-(6) superimposed, obtain the grid control signal of PMOS rectifier tube 12；Radio-frequency power is entered by RF-coupled electric capacity
Enter rectification circuit, and the dc power being converted between direct current input VL-1 and direct current output VH-2 with certain efficiency.
Thus remain the advantage that forward conduction angle is big, reverse leakage current is little of dynamic threshold technology for eliminating, the most permissible
DC bias signal is utilized to control equivalent threshold value and the conducting resistance (i.e. static threshold technology for eliminating) of rectifier tube.Static threshold disappears
Combine except eliminating with dynamic threshold, change the equivalent threshold value of rectifier tube with DC bias signal, to increase the positive guide of rectifier tube
Galvanization；Rectifier tube is turned off, to reduce rectifier tube reverse leakage current by anti-phase radiofrequency signal.
Further, since biasing circuit can stablize the gate source voltage of rectifier tubeAnd drain-to-gate voltage, defeated to radio frequency
Inbound port equivalent parallel electric capacityPlay the gate-source capacitance of main contributionsAnd gate leakage capacitanceIt is kept essentially constant, thus
Equivalent parallel electric capacityIt is kept essentially constant, so the present invention can realize the least impedance in the widest power bracket and lose
Join.
The present invention is differential configuration, the radiofrequency signal added by rectifier tube drain electrode or source electrode and the radio frequency letter superposed on its grid
Number opposite in phase.
In the present invention, described DC bias signal can be voltage signal, it is also possible to be current signal.
In the present invention, DC bias signal can be by cell powers, it is also possible to provided power supply by auxiliary rectifier, also
The dc power that can be produced by commutator oneself provides power supply.
In the present invention, by controlling DC bias signal, the equivalent threshold value of rectifier tube can be changed, change the conducting of rectifier tube
Resistance, and the equivalent input impedance of prevention at radio-frequency port can be controlled.
In the present invention, by arranging suitable DC bias signal, commutator can be kept in wide input power range
Parasitic capacitance be basically unchanged, keep commutator prevention at radio-frequency port input impedance the most stable.
In the present invention, by arranging suitable DC bias signal, can be in wide input power range, it is achieved good
Impedance matching, significantly reduces the energy loss that impedance mismatching causes.
In the present invention, by controlling DC bias signal, it is possible to achieve the least rectifier tube equivalence threshold value, in conjunction with dynamic threshold
The stronger reverse turn-off capacity of value technology for eliminating, it is possible to achieve the high efficiency power conversion under ultralow RF input power.
The present invention realizes higher output voltage by the way of using multi-stage cascade.
Commutator of the present invention, chooses suitable bias structure, it is possible to achieve offset is identical with rectifier tube
Body bias effect, rectification effect is with not have body bias effect just the same, and every one-level can obtain performance about the same.
The present invention can realize the high efficiency power conversion under the input of ultralow radio-frequency power, and in wide input power bandwidth
Good impedance match, thus improve the energy transmission efficiency in wide power band.Apply the present invention to RF identification (RFID) etc.
Field, can be greatly improved label reading and writing sensitivity, thus improve its system sensitivity.
Accompanying drawing explanation
Fig. 1 is that static threshold eliminates rectifier structure.
Fig. 2 is that dynamic threshold eliminates rectifier structure.
Fig. 3 is the relation curve of power conversion efficiency and the input power typically comprising impedance mismatching.
Fig. 4 is that the static threshold that the present invention proposes eliminates the commutator combined with dynamic threshold elimination.
Fig. 5 is that static threshold eliminates a kind of concrete commutator combined with dynamic threshold elimination.
Fig. 6 is the commutator of multi-stage cascade.
Label in figure: 1-direct current input VL, 2-direct current output VH, 3-single-ended radio frequency signal RF, 4-bias current, 5-difference
Radiofrequency signal RF+, 6-difference radio-frequency signal RF-, 7-rectifier tube drain terminal, 8-rectifier tube drain terminal, 9-NMOS DC bias signal,
10-PMOS DC bias signal, 11-NMOS rectifier tube, 12-PMOS rectifier tube, biasing module VSN of 13-NMOS rectifier tube,
Biasing module VSP of 14-PMOS rectifier tube, 21-RF input power, 22-comprises the power conversion efficiency of impedance mismatching, 23-
Power conversion efficiency curve, 24-minimum input radio frequency power of interest, 25-bigger input radio frequency power of interest.
Detailed description of the invention
The basic thought of the present invention be static threshold eliminate with dynamic threshold eliminate combine, below in conjunction with the accompanying drawings and enforcement
The invention will be further described for example.
Embodiment
For more detailed description present disclosure, illustrate as a example by circuit structure shown in Fig. 5 and Fig. 6 here.
Those skilled in the art all knows, this is only a citing, is not used for limiting the scope of the present invention.
Commutator shown in Fig. 5 is fully differential structure, single stage power conversion unit by four rectifier tubes MN1, MN2, MP1 and MP2 with
And four VS modules VSN of correspondence and VSP are constituted, by two radio frequency electric capacity coupled RF signals.NMOS rectifier tube MN1 and MN2
Substrate B ground connection, source S meets direct current input VL, drain terminal D and PMOS rectifier tube drain terminal D and is connected, grid G and NMOS rectifier tube
The control signal that biasing module VSN produces is connected.The substrate B of PMOS rectifier tube MP1 and MP2 meets direct current output VH, and source S connects directly
Stream output VH, drain terminal D and NMOS rectifier tube drain terminal D is connected, the control that biasing module VSP of grid G and PMOS rectifier tube produces
Signal is connected.VSN is made up of a NMOS tube, resistance, an electric capacity, and bias current IBN produces one by NMOS tube
Produced biasing voltage signal and difference radio-frequency signal are superimposed upon one by the biasing voltage signal with VL as reference, resistance and electric capacity
Rise, obtain the grid control signal VC of NMOS rectifier tube.VSP is made up of a PMOS, resistance, an electric capacity, biasing
Electric current IBP produces a biasing voltage signal with VH as reference by PMOS, and resistance and electric capacity are by produced bias voltage
Signal is superimposed with difference radio-frequency signal, obtains the grid control signal VC of PMOS rectifier tube.Two radio frequency electric capacity are constituted
The input channel of radio-frequency power.
By controlling bias current signal IBN and IBP, thus it is possible to vary with the biasing that rectifier tube forms current mirror annexation
D. c. voltage signal on pipe, thus realize the control to rectifier tube equivalence threshold value；To be produced with a resistance and an electric capacity
Raw biasing voltage signal is superimposed with difference radio-frequency signal, obtains the grid control signal VC of PMOS rectifier tube.The most both
Can equally change the equivalent threshold value of rectifier tube to static threshold technology for eliminating, dynamic threshold technology for eliminating can retained just again
Big to the angle of flow, reversely turn off strong advantage.
In order to export higher DC voltage, can realize by the mode of the multi-stage cascade shown in Fig. 6.Due to every one-level
NMOS tube in corresponding biasing module VSN of NMOS rectifier tube has identical body bias effect, so biasing in every one-level
Under conditions of electric current is identical, every one-level has identical commutating character and radio frequency parameter, identical with not having body bias effect.
Required equivalent parallel electric capacity is obtained by the size arranging rectifier tube, by controlling bias current IBN and IBP
Obtain required equivalent parallel resistance, bias current IBP and IBN is to equivalence shunt capacitance simultaneouslyHave a certain impact.
As long as keeping bias current IBN and IBP constant, then this rectifier structure can keep equivalence also at the widest input power range
Connection electric capacityIt is basically unchanged, thus realizes the impedance matching in preferable broad power band.
Above in association with accompanying drawing, the detailed description of the invention of the present invention is described, but these explanations can not be understood to limit
The scope of the present invention, protection scope of the present invention is defined by the claims, any on the basis of the claims in the present invention
Changing is all protection scope of the present invention.
Claims (9)
1. a static threshold eliminates and eliminates, with dynamic threshold, the voltage-doubler rectifier combined, it is characterised in that: static threshold disappears
Combine except eliminating with dynamic threshold；The equivalent threshold value of rectifier tube is changed, to increase rectifier tube forward conduction electricity with direct current biasing
Stream；Rectifier tube is turned off, to reduce rectifier tube reverse leakage current by anti-phase radiofrequency signal；
This voltage-doubler rectifier is differential configuration, and single stage power conversion unit, by four rectifier tubes and four corresponding VS module compositions, has
Two radio frequency electric capacity coupled RF signals；Four rectifier tubes are 2 NMOS rectifier tubes (11) and 2 PMOS rectifier tubes (12), right
Biasing module VSN(13 that four VS modules are 2 NMOS rectifier tubes answered) and biasing module VSP of 2 PMOS rectifier tubes
(14)；Wherein, NMOS rectifier tube (11) substrate B ground connection, source S connects direct current input VL-1, drain terminal D and corresponding PMOS rectification
Pipe (12) drain terminal D is connected；The control signal that grid G produces with biasing module VSN (13) of NMOS rectifier tube is connected；PMOS is whole
Flow tube (12) substrate B meets direct current output VH-2, and source S meets direct current output VH-2, drain terminal D and leaks with corresponding NMOS rectifier tube (11)
End D is connected, and the control signal that grid G produces with biasing module VSP (14) of PMOS rectifier tube is connected；NMOS rectifier tube inclined
Put module VSN (13) to be connected, as DC reference, with difference radio-frequency signal RF+(5 with direct current input VL-1) or differential radio frequency
Signal RF-(6) it is connected, it is connected with NMOS DC bias signal (9)；Biasing module VSP(14 of PMOS rectifier tube) defeated with direct current
Go out VH-2 to be connected, as DC reference, with difference radio-frequency signal RF+(5) or difference radio-frequency signal RF-(6) be connected, with PMOS
DC bias signal (10) is connected；At difference radio-frequency signal RF+(5) and a PMOS rectifier tube drain terminal D(7) between access radio frequency
Electric capacity, at difference radio-frequency signal RF-(6) and another PMOS rectifier tube drain terminal D(8) between access radio frequency electric capacity, the two is penetrated
Frequently electric capacity constitutes the input channel of radio-frequency power；
Wherein, NMOS DC bias signal (9) provides direct current biasing with direct current input VL-1 for datum, NMOS rectifier tube
Biasing module VSN (13) is by gained direct current biasing and difference radio-frequency signal RF+(5) or difference radio-frequency signal RF-(6) superimposed,
Obtain the grid control signal of NMOS rectifier tube (11)；PMOS DC bias signal (10) is with direct current output VH-2 as datum
Direct current biasing, biasing module VSP(14 of PMOS rectifier tube are provided) by gained direct current biasing and difference radio-frequency signal RF+(5) or
Difference radio-frequency signal RF-(6) superimposed, obtain the grid control signal of PMOS rectifier tube (12)；Radio-frequency power passes through radio frequency electrical
Hold and enter rectification circuit, and the direct current merit being converted between direct current input VL-1 and direct current output VH-2 with certain efficiency
Rate.
Voltage-doubler rectifier the most according to claim 1, it is characterised in that: described direct current biasing is voltage signal or electric current letter
Number.
Voltage-doubler rectifier the most according to claim 1, it is characterised in that: by controlling direct current biasing, change rectifier tube
Equivalence threshold value, changes the conducting resistance of rectifier tube, controls the equivalent input impedance of prevention at radio-frequency port.
Voltage-doubler rectifier the most according to claim 1, it is characterised in that: by arranging suitable direct current biasing, defeated at width
Entering in power bracket, the parasitic capacitance keeping voltage-doubler rectifier is substantially constant, keeps the input resistance of voltage-doubler rectifier prevention at radio-frequency port
Anti-is the most stable.
Voltage-doubler rectifier the most according to claim 1, it is characterised in that: by arranging suitable direct current biasing, defeated at width
Enter in power bracket, it is achieved good impedance matching, significantly reduce the energy loss that impedance mismatching causes.
Voltage-doubler rectifier the most according to claim 1, it is characterised in that: by controlling direct current biasing, it is achieved the least is whole
Flow tube equivalence threshold value, in conjunction with the stronger reverse turn-off capacity of dynamic threshold technology for eliminating, it is achieved at ultralow RF input power
Under high efficiency power conversion.
Voltage-doubler rectifier the most according to claim 1, it is characterised in that: direct current biasing by cell powers, or by
Auxiliary rectifier provides power supply, or the dc power produced by voltage-doubler rectifier oneself provides power supply.
Voltage-doubler rectifier the most according to claim 1, it is characterised in that: realize higher output by the mode of multi-stage cascade
Voltage.
Voltage-doubler rectifier the most according to claim 8, it is characterised in that: choose suitable bias structure, to realize biasing
Pipe and the identical body bias effect of rectifier tube, make rectification effect with not have body bias effect just the same, and every one-level obtains completely
The same performance.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410159855.9A CN103956920B (en) | 2014-04-21 | 2014-04-21 | Static threshold eliminates and eliminates, with dynamic threshold, the voltage-doubler rectifier combined |
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| CN201410159855.9A CN103956920B (en) | 2014-04-21 | 2014-04-21 | Static threshold eliminates and eliminates, with dynamic threshold, the voltage-doubler rectifier combined |
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| CN103956920B true CN103956920B (en) | 2016-08-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10312743B2 (en) | 2015-05-26 | 2019-06-04 | King Abdullah University Of Science And Technology | RF-to-DC power converters for wireless powering |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104269946B (en) * | 2014-10-30 | 2016-04-06 | 桂林电子科技大学 | A kind of radio frequency energy collector |
| CN105991002B (en) * | 2015-02-04 | 2018-10-09 | 中国科学院微电子研究所 | Cmos rectifier diode circuit unit |
| CN106100394B (en) * | 2016-07-25 | 2019-04-05 | 南方科技大学 | Rectifier |
| US10355615B2 (en) * | 2017-03-30 | 2019-07-16 | Lapis Semiconductor Co., Ltd. | Rectifier circuit for opposite-phase currents |
| CN106849706B (en) * | 2017-03-31 | 2019-02-12 | 中国科学院上海高等研究院 | A kind of AC-DC rectifier unit and its application circuit |
| CN111130367B (en) * | 2019-12-30 | 2021-02-26 | 成都达安众科技有限公司 | Rectifying unit based on fixed threshold elimination and differential voltage doubling, rectifier and RFID label |
| CN112542956B (en) * | 2020-12-08 | 2021-10-12 | 东南大学 | Wide dynamic range self-biased differential drive rectifier circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1710795A (en) * | 2005-07-07 | 2005-12-21 | 上海坤锐电子科技有限公司 | Floating-grid threshold-value adjustable rectifying circuit for radio electronic label |
| CN1963844A (en) * | 2006-11-30 | 2007-05-16 | 上海坤锐电子科技有限公司 | Self-offset high efficiency rectification circuit used for RF electron tag |
| CN102063638A (en) * | 2011-02-17 | 2011-05-18 | 上海龙晶微电子有限公司 | Rectification circuit for radio frequency electronic tags |
| CN102386789A (en) * | 2010-08-27 | 2012-03-21 | Nxp股份有限公司 | High efficiency charge pump |
-
2014
- 2014-04-21 CN CN201410159855.9A patent/CN103956920B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1710795A (en) * | 2005-07-07 | 2005-12-21 | 上海坤锐电子科技有限公司 | Floating-grid threshold-value adjustable rectifying circuit for radio electronic label |
| CN1963844A (en) * | 2006-11-30 | 2007-05-16 | 上海坤锐电子科技有限公司 | Self-offset high efficiency rectification circuit used for RF electron tag |
| CN102386789A (en) * | 2010-08-27 | 2012-03-21 | Nxp股份有限公司 | High efficiency charge pump |
| CN102063638A (en) * | 2011-02-17 | 2011-05-18 | 上海龙晶微电子有限公司 | Rectification circuit for radio frequency electronic tags |
Non-Patent Citations (1)
| Title |
|---|
| 《无源射频识别标签整流电路的分析与设计》;姜帆，郭东辉;《上海交通大学学报》;20070415;第41卷;全文 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10312743B2 (en) | 2015-05-26 | 2019-06-04 | King Abdullah University Of Science And Technology | RF-to-DC power converters for wireless powering |
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