CN103955254B - A kind of circuit producing multiple current reference - Google Patents
A kind of circuit producing multiple current reference Download PDFInfo
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- CN103955254B CN103955254B CN201410101134.2A CN201410101134A CN103955254B CN 103955254 B CN103955254 B CN 103955254B CN 201410101134 A CN201410101134 A CN 201410101134A CN 103955254 B CN103955254 B CN 103955254B
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Abstract
The invention discloses a kind of circuit producing multiple current reference.First generate the first current reference by a reference voltage and the first resistance by the first feedback control loop; Then mirror phase is done to the first current reference, make mirror phase current flow through the second resistance; Again by the second feedback control loop, compensate the electric current of the second resistance, make the second ohmically voltage equal with above-mentioned reference voltage; Namely this can be used as the second current reference for the electric current compensated.Also first, second current reference can be sued for peace, obtain only relevant with the second resistance to reference voltage current reference.
Description
Technical field
The present invention relates to SIC (semiconductor integrated circuit), particularly a kind of circuit producing multiple current reference based on a reference voltage and multiple resistance newly.
Background technology
Many application in mimic channel all require to provide curtage benchmark.Voltage reference general bandgap voltage reference generates, and current reference generally generates by means of reference voltage and resistance.The requirement of different application to current reference is different, the size be such as worth, temperature coefficient, accuracy.So just require to adopt the resistance varied in size, or there is different temperature coefficients, the resistance of accuracy.
Common, the method generating different current reference is, for each current reference, use an operational amplifier respectively, obtain required electric current by feedback control loop, each feedback control loop has stablizes compensating circuit accordingly.
Above-mentioned common, generate the schematic diagram of different current reference method as shown in Figure 2.Two operational amplifier A mp_0, Amp_1 share voltage benchmark Vref, control control tube Mos_n0, Mos_n1 respectively, at resistance Res_0, Res_1 obtains electric current also respectively by current detector Isns_0, Isns_1 detects, current source Irf_0, Irf_1 be mirror phase Isns_0 respectively, and Isns_1 obtains output current benchmark, electric capacity Cap_0, Cap_1 make compensation to above-mentioned two control loops respectively.
This method there is use operational amplifier or building-out capacitor is too much, the shortcoming that cost is higher.
Summary of the invention
The problem that the present invention solves is, when needing multiple current reference, uses operational amplifier or the too much problem of building-out capacitor.
In order to solve the problem, the invention discloses the circuit of the multiple current reference of a kind of generation newly, it realizes multiple current reference based on a reference voltage and multiple resistance.Concrete scheme is: first generate the first current reference by a reference voltage and the first resistance by the first feedback control loop; Then mirror phase is done to the first current reference, make mirror phase current flow through the second resistance; Again by the second feedback control loop, compensate the electric current of the second resistance, make the second ohmically voltage equal with above-mentioned reference voltage; Namely this can be used as the second current reference for the electric current compensated.Also first, second current reference can be sued for peace, obtain only relevant with the second resistance to reference voltage current reference.
As shown in Figure 1, a kind of circuit producing multiple current reference based on a reference voltage and multiple resistance newly disclosed by the invention, comprises the first current reference generator (1), the second current reference generator (2), output current benchmark (3); The first current reference generator (1) wherein, the second current reference generator (2) generate the current reference based on two resistance and a collective reference voltage respectively; The current reference that output current benchmark (3) mirror phase the first current reference generator (1) wherein or the second current reference generator (2) generate, and export to load.Each ingredient has following characteristics:
First current reference generator (1), is characterized in that: at least comprise a voltage reference (Vref), an operational amplifier (Amp_0), a reference resistance (Res_0), a control tube (Mos_n0), a current detector (Isns_0); Operational amplifier (Amp_0) wherein, the output voltage Vref of receiver voltage benchmark (Vref), by feedback loop control control tube (Mos_n0), make the electric current flowing through resistance (Res_0) equal the business (Vref/Res_0) of voltage reference and reference resistance, this electric current is detected by current detector (Isns_0).
Second current reference generator (2), is characterized in that: at least comprise a current mirror (Imr_0), control tube (Mos_p1), a mirror manage (Mos_n1), a current detector (Isns_1) mutually; Current mirror (Imr_0) mirror phase current sensing device (Isns_0) wherein, this electric current flows through mirror manages (Mos_n1) mutually; By arranging suitable transistor size, manage under loop that (Mos_n1) formed controls mutually with mirror at control tube (Mos_p1), the gate source voltage that mirror is managed mutually (Mos_n1) is equal with control tube (Mos_n0); The channel current of control tube (Mos_p1) is detected by current detector (Isns_1).
Output current benchmark (3), is characterized in that: at least comprise current source (Irf_0) or current source (Irf_1); Current detector (Isns_0) in current source (Irf_0) mirror phase the second current reference generator (2) wherein, the current detector (Isns_1) in current source (Irf_1) mirror phase the second current reference generator (2).
This newly produce the second current reference generator (2) in the circuit of multiple current reference or output current benchmark (3) based on a reference voltage and multiple resistance, repeatedly can use according to identical principle, obtain different current references.Generate current reference for single, have annexation below as shown in Figure 1: an input end of voltage reference Vref and operational amplifier A mp_0 is connected to node Nvrf_0.One end of another input end of operational amplifier and the source of transistor Mos_n0, resistance Res_0 is connected to node Nvfb_0.The output terminal of operational amplifier A mp_0, the grid end of transistor Mos_n0, Mos_n1 is connected to node Nctr_0.The drain terminal of transistor Mos_n0, one end of current detector Isns_0 is connected to node Nsns.One end of current mirror Imr_0, the grid end of transistor Mos_p1, the drain terminal of transistor Mos_n1 is connected to node Nmr.One end of current detector Isns_1 is connected with the source of transistor Mos_p1.The source of transistor Mos_n1, the drain terminal of transistor Mos_p1, one end of resistance Res_1 is connected to node Nctr_1.Current mirror Irf_0, Irf_1 mirror image Isns_0, the electric current of Isns_1 outputs to load.What be connected with power supply node Nvbat has current detector Isns_0, current detector Isns_1, current mirror Imr_0, current reference Irf_0, Irf_1.What be connected with ground reference mode Ngnd has voltage reference Vref, resistance Res_0, resistance Res_1.
The advantage of the program is, by less operational amplifier and building-out capacitor, based on a reference voltage and multiple resistance, creates multiple current reference.
A kind of circuit producing multiple current reference based on a reference voltage and multiple resistance newly disclosed by the invention, the device used can be but be not limited to metal-oxide semiconductor device (MOSFET), as other semiconductor devices can be used, as bipolar technology device (Bipolar), BiCMOS device (BiCMOS), SOI device (SOI) etc.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is described in further detail:
Fig. 1: a kind of technical scheme schematic diagram producing the circuit of multiple current reference based on a reference voltage and multiple resistance newly disclosed by the invention;
Fig. 2: the schematic diagram of the common method of multiple current reference that generates based on a reference voltage and multiple resistance;
Fig. 3: specific embodiment 1 disclosed by the invention;
Fig. 4: specific embodiment 2 disclosed by the invention;
Embodiment
Below by specific instantiation, embodiments of the present invention are described, refer to Fig. 3 to Fig. 4.Those skilled in the art can understand other advantages of the present invention and effect easily by content disclosed in the present specification.The present invention can also be implemented by embodiments different in addition or be applied.Every details in this instructions also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
One embodiment of the present of invention as shown in Figure 3.This embodiment is to the current detector in Fig. 1, and current mirror, current reference exports and carried out concrete refinement.Comprise the first current reference generator (1), the second current reference generator (2), output current benchmark (3).An input end of voltage reference Vref and operational amplifier A mp_0 is connected in node Nvrf_0.Another input end of operational amplifier, the source of transistor Mos_n0, one end of resistance Res_0 is connected in node Nvfb_0.The output terminal of operational amplifier A mp_0, the grid end of transistor Mos_n0, Mos_n1 is connected in node Nctr_0.The drain terminal of transistor Mos_n0, the drain terminal of current detector Isns_p0 and grid end, as the grid end of the Isns_p0 mirror transistor Imr_p0 of pipe mutually, to manage as Isns_p0 mirror and the grid end of the transistor Irf_p0 of output current is connected to node Nsns mutually.The drain terminal of transistor Imr_p0, the grid end of transistor Mos_p1, the drain terminal of transistor Mos_n1 are connected to node Nmr.Double as the drain terminal of the transistor Mos_p1 of control tube and current detecting pipe, the source of transistor Mos_n1, one end of resistance Res_1 be connected to node Nctr_1.The channel current of current mirror Irf_p0, Irf_p1 mirror image Isns_p0, Mos_p1 outputs to load.What be connected with power supply node Nvbat has: the source of current detector Isns_p0, doubles as the source of the Imr_p0 of current detector, the source of current reference Irf_p0, Irf_p1.What be connected with ground reference mode Ngnd has: the non-amplifier input end of voltage reference Vref, the noncrystal pipe end of resistance Res_0, resistance Res_1.
One embodiment of the present of invention as shown in Figure 4.This embodiment has done mirror phase transformation to related transistor in Fig. 1, and the reference current achieving ground sinks.Comprise the first current reference generator (1), the second current reference generator (2), output current benchmark (3).An input end of voltage reference Vref, operational amplifier A mp_0 is connected to node Nvrf_0.Another input end of operational amplifier, the source of transistor Mos_p0, one end of resistance Res_0 is connected to node Nvfb_0.The output terminal of operational amplifier A mp_0, the grid end of transistor Mos_p0, Mos_p1 is connected to node Nctr_0.The drain terminal of transistor Mos_p0, the drain terminal of current detector Isns_n0 and grid end, as the grid end of the Isns_n0 mirror transistor Imr_n0 of pipe mutually, to manage as Isns_n0 mirror and the grid end of the transistor Irf_n0 of output current is connected to node Nsns mutually.The drain terminal of transistor Imr_n0, the grid end of transistor Mos_n1, the drain terminal of transistor Mos_p1 are connected to node Nmr.Double as the drain terminal of the transistor Mos_n1 of control tube and current detecting pipe, the source of transistor Mos_p1, one end of resistance Res_1 is connected to node Nctr_1.Current mirror Irf_n0, the channel current of Irf_n1 mirror image Isns_n0, Mos_n1 outputs to load, what be connected with ground reference mode Ngnd has: the source of current detector Isns_n0, doubles as the source of the Imr_n0 of current detector, the source of current reference Irf_n0, Irf_n1.What be connected with power supply node Nvbat has: the non-amplifier input end of voltage reference Vref, the noncrystal pipe end of resistance Res_0, resistance Res_1.
Above-described embodiment is exemplary illustration principle of the present invention and effect thereof only, but not for limiting the present invention.Person skilled in the art all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art and usually know that all equivalences that the knowledgeable completes under the spirit do not departed from suggested by the present invention and technological thought are modified or change, still contained by claim of the present invention.
Claims (7)
1. the new circuit producing multiple current reference based on a reference voltage and multiple resistance, it is characterized in that, at least comprise: the first current reference generator (1), the second current reference generator (2) and output current benchmark (3);
Described first current reference generator (1) at least comprises a voltage reference (Vref), operational amplifier (Amp_0), the first reference resistance (Res_0), the first control tube (Mos_n0), the first current detector (Isns_0);
Described second current reference generator (2) at least comprises a current mirror (Imr_0), the second control tube (Mos_p1), a mirror manage (Mos_n1), the second current detector (Isns_1) mutually;
Described operational amplifier (Amp_0) receives the output voltage of described voltage reference (Vref), is made the current value of the electric current flowing through described first reference resistance (Res_0) equal the business of the magnitude of voltage of the output voltage of described voltage reference (Vref) and the resistance value of described first reference resistance (Res_0) by the first control tube (Mos_n0) described in feedback loop control;
Described first current detector (Isns_0) detects the electric current of described first reference resistance (Res_0);
Mutually described first current detector (Isns_0) of described current mirror (Imr_0) mirror, the image current of described current mirror (Imr_0) flows through described mirror manages (Mos_n1) mutually;
Manage under loop that (Mos_n1) formed controls mutually with mirror described second control tube (Mos_p1), the gate source voltage that described mirror manages (Mos_n1) is mutually equal with the gate source voltage of described first control tube (Mos_n0);
Described second current detector (Isns_1) detects the channel current of described second control tube (Mos_p1).
2. a kind of circuit producing multiple current reference based on a reference voltage and multiple resistance newly as claimed in claim 1, it is characterized in that: described second current reference generator (2) also comprises the second reference resistance (Res_1) wherein, described first current reference generator (1), the second current reference generator (2) generate the current reference of the output voltage based on described first reference resistance (Res_0) and the second reference resistance (Res_1) and voltage reference (Vref) respectively; The current reference that output current benchmark (3) mirror phase the first current reference generator (1) wherein or the second current reference generator (2) generate, and export to load.
3. a kind of circuit producing multiple current reference based on a reference voltage and multiple resistance newly as claimed in claim 1, it is characterized in that: an input end of described operational amplifier receives the output voltage of described voltage reference (Vref), another input end of described operational amplifier connects the source of described first control tube (Mos_n0) and one end of the first reference resistance (Res_0), the output terminal of described operational amplifier (Amp_0) connects the grid of described first control tube (Mos_n0), the other end of described first reference resistance (Res_0) connects ground reference mode, the drain terminal of described first control tube (Mos_n0) connects the first current detector (Isns_0).
4. a kind of circuit producing multiple current reference based on a reference voltage and multiple resistance newly as claimed in claim 1, it is characterized in that: described second current reference generator (2) also comprises the second reference resistance (Res_1), the grid end of described first control tube (Mos_n0) of grid end connection of (Mos_n1) managed mutually by described mirror, the drain terminal that described mirror manages (Mos_n1) mutually connects the grid end of described current mirror (Imr_0) and described second control tube (Mos_p1), the source that described mirror manages (Mos_n1) mutually connects the drain terminal of described second control tube (Mos_p1) and one end of the second reference resistance (Res_1), the source of described second control tube (Mos_p1) connects described second current detector (Isns_1), the other end ground connection reference mode of described second reference resistance (Res_1).
5. a kind of circuit producing multiple current reference based on a reference voltage and multiple resistance newly as claimed in claim 1, is characterized in that: described output current benchmark (3) at least comprises the first current source (Irf_0) or the second current source (Irf_1); Mutually described first current detector (Isns_0) of the first current source (Irf_0) mirror wherein, mutually described second current detector (Isns_1) of the second current source (Irf_1) mirror.
6. a kind of circuit producing multiple current reference based on a reference voltage and multiple resistance newly as claimed in claim 1, it is characterized in that, multiple second current reference generator (2) or multiple output current benchmark (3), be suitable for obtaining different current references.
7. a kind of circuit producing multiple current reference based on a reference voltage and multiple resistance newly as claimed in claim 1, it is characterized in that, the device that described first current reference generator (1), the second current reference generator (2) and output current benchmark (3) use is metal-oxide semiconductor device (MOSFET), bipolar technology device (Bipolar), BiCMOS device (BiCMOS) or SOI device (SOI).
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| CN201410101134.2A CN103955254B (en) | 2014-03-18 | 2014-03-18 | A kind of circuit producing multiple current reference |
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| CN201410101134.2A CN103955254B (en) | 2014-03-18 | 2014-03-18 | A kind of circuit producing multiple current reference |
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| CN103955254B true CN103955254B (en) | 2015-11-11 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107943197A (en) * | 2017-12-06 | 2018-04-20 | 尚睿微电子（上海）有限公司 | A kind of more current source multivoltage source generating circuits |
| CN112596576B (en) * | 2020-11-19 | 2024-02-02 | 北京智芯微电子科技有限公司 | Band gap reference circuit |
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| JP2000010643A (en) * | 1998-06-19 | 2000-01-14 | Toyota Motor Corp | Constant current source |
| CN1577448A (en) * | 2003-06-25 | 2005-02-09 | 恩益禧电子股份有限公司 | Current source circuit and method of outputting current |
| CN1614671A (en) * | 2003-11-07 | 2005-05-11 | 日本电气株式会社 | Semiconductor device for driving current load device and displaying apparatus |
| CN101521968A (en) * | 2008-02-27 | 2009-09-02 | 立锜科技股份有限公司 | Current regulator and control method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007213027A (en) * | 2006-01-12 | 2007-08-23 | Matsushita Electric Ind Co Ltd | Current driving circuit |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000010643A (en) * | 1998-06-19 | 2000-01-14 | Toyota Motor Corp | Constant current source |
| CN1577448A (en) * | 2003-06-25 | 2005-02-09 | 恩益禧电子股份有限公司 | Current source circuit and method of outputting current |
| CN1614671A (en) * | 2003-11-07 | 2005-05-11 | 日本电气株式会社 | Semiconductor device for driving current load device and displaying apparatus |
| CN101521968A (en) * | 2008-02-27 | 2009-09-02 | 立锜科技股份有限公司 | Current regulator and control method thereof |
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