CN103946988B - 带隙变化的太阳能电池 - Google Patents

带隙变化的太阳能电池 Download PDF

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Publication number
CN103946988B
CN103946988B CN201280057556.3A CN201280057556A CN103946988B CN 103946988 B CN103946988 B CN 103946988B CN 201280057556 A CN201280057556 A CN 201280057556A CN 103946988 B CN103946988 B CN 103946988B
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China
Prior art keywords
layer
quantum well
well layer
solaode
indium
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Expired - Fee Related
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CN201280057556.3A
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English (en)
Chinese (zh)
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CN103946988A (zh
Inventor
萨蒂亚纳拉扬·巴利克
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Gallium Enterprises Pty Ltd
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Gallium Enterprises Pty Ltd
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Priority claimed from AU2011903944A external-priority patent/AU2011903944A0/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H10F77/12485—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP comprising nitride compounds, e.g. InGaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
CN201280057556.3A 2011-09-23 2012-09-21 带隙变化的太阳能电池 Expired - Fee Related CN103946988B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
AU2011903944A AU2011903944A0 (en) 2011-09-23 Varying bandgap solar cell
AU2011903944 2011-09-23
PCT/AU2012/001152 WO2013040659A1 (en) 2011-09-23 2012-09-21 Varying bandgap solar cell

Publications (2)

Publication Number Publication Date
CN103946988A CN103946988A (zh) 2014-07-23
CN103946988B true CN103946988B (zh) 2016-11-16

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CN201280057556.3A Expired - Fee Related CN103946988B (zh) 2011-09-23 2012-09-21 带隙变化的太阳能电池

Country Status (8)

Country Link
US (1) US20150101657A1 (https=)
EP (1) EP2758996B1 (https=)
JP (1) JP6335784B2 (https=)
KR (1) KR102180986B1 (https=)
CN (1) CN103946988B (https=)
AU (1) AU2012313362B2 (https=)
SG (1) SG11201400841XA (https=)
WO (1) WO2013040659A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104201220B (zh) * 2014-08-26 2016-06-29 中国科学院半导体研究所 含有低温插入层的铟镓氮/氮化镓多量子阱太阳能电池
CN105185861A (zh) * 2015-08-05 2015-12-23 辽宁恒华航海电力设备工程有限公司 一种玻璃结构薄膜太阳能电池及制备方法
US20190348563A1 (en) 2017-01-05 2019-11-14 Brilliant Light Power, Inc. Extreme and deep ultraviolet photovoltaic cell
JP6891865B2 (ja) * 2018-10-25 2021-06-18 日亜化学工業株式会社 発光素子

Citations (6)

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US6147296A (en) * 1995-12-06 2000-11-14 University Of Houston Multi-quantum well tandem solar cell
WO2001047031A2 (en) * 1999-12-13 2001-06-28 Swales Aerospace Graded band gap multiple quantum well solar cell
US6437233B1 (en) * 2000-07-25 2002-08-20 Trw Inc. Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture therefor
WO2009142677A2 (en) * 2008-03-24 2009-11-26 The Board Of Trustees Of The Leland Stanford Junior University Quantum dot solar cell with quantum dot bandgap gradients
CN101911312A (zh) * 2008-01-07 2010-12-08 罗斯特里特实验室能源公司 具有渐变组成的第ⅲ族氮化物太阳能电池
CN102103990A (zh) * 2009-12-17 2011-06-22 上海蓝光科技有限公司 用于光电器件的多量子阱结构的制备方法

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US4688068A (en) * 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
JPS61120480A (ja) * 1984-11-16 1986-06-07 Hitachi Ltd 光電変換装置
JPS62128182A (ja) * 1985-11-28 1987-06-10 Mitsubishi Electric Corp 太陽電池
JP2945647B2 (ja) * 1998-02-02 1999-09-06 株式会社日立製作所 太陽電池
KR100589621B1 (ko) * 1998-03-12 2006-06-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
GB0118150D0 (en) 2001-07-25 2001-09-19 Imperial College Thermophotovoltaic device
US7119359B2 (en) * 2002-12-05 2006-10-10 Research Foundation Of The City University Of New York Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures
US20050211291A1 (en) * 2004-03-23 2005-09-29 The Boeing Company Solar cell assembly
CN1938864B (zh) 2004-03-31 2011-03-23 奥斯兰姆奥普托半导体有限责任公司 辐射探测器
US20050247339A1 (en) 2004-05-10 2005-11-10 Imperial College Innovations Limited Method of operating a solar cell
US7838869B2 (en) 2005-10-21 2010-11-23 Georgia State University Research Foundation, Inc. Dual band photodetector
US7629532B2 (en) * 2006-12-29 2009-12-08 Sundiode, Inc. Solar cell having active region with nanostructures having energy wells
GB2463905B (en) * 2008-09-29 2012-06-06 Jds Uniphase Corp Photovoltaic cell
US9530920B2 (en) * 2009-08-06 2016-12-27 National University Corporation Chiba University Photoelectric conversion device
US8106421B2 (en) * 2009-08-21 2012-01-31 University Of Seoul Industry Cooperation Foundation Photovoltaic devices

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6147296A (en) * 1995-12-06 2000-11-14 University Of Houston Multi-quantum well tandem solar cell
WO2001047031A2 (en) * 1999-12-13 2001-06-28 Swales Aerospace Graded band gap multiple quantum well solar cell
US6437233B1 (en) * 2000-07-25 2002-08-20 Trw Inc. Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture therefor
CN101911312A (zh) * 2008-01-07 2010-12-08 罗斯特里特实验室能源公司 具有渐变组成的第ⅲ族氮化物太阳能电池
WO2009142677A2 (en) * 2008-03-24 2009-11-26 The Board Of Trustees Of The Leland Stanford Junior University Quantum dot solar cell with quantum dot bandgap gradients
CN102103990A (zh) * 2009-12-17 2011-06-22 上海蓝光科技有限公司 用于光电器件的多量子阱结构的制备方法

Also Published As

Publication number Publication date
EP2758996A4 (en) 2015-05-27
AU2012313362A1 (en) 2013-05-09
SG11201400841XA (en) 2014-04-28
KR102180986B1 (ko) 2020-11-20
US20150101657A1 (en) 2015-04-16
JP2014531758A (ja) 2014-11-27
EP2758996B1 (en) 2020-04-01
AU2012313362B2 (en) 2014-08-07
CN103946988A (zh) 2014-07-23
EP2758996A1 (en) 2014-07-30
WO2013040659A1 (en) 2013-03-28
HK1200242A1 (en) 2015-07-31
JP6335784B2 (ja) 2018-05-30
KR20140066219A (ko) 2014-05-30

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Granted publication date: 20161116