CN103943768A - Light emitting diode device and manufacturing method of cooling substrate - Google Patents
Light emitting diode device and manufacturing method of cooling substrate Download PDFInfo
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- CN103943768A CN103943768A CN201310025965.1A CN201310025965A CN103943768A CN 103943768 A CN103943768 A CN 103943768A CN 201310025965 A CN201310025965 A CN 201310025965A CN 103943768 A CN103943768 A CN 103943768A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Abstract
The invention provides a light emitting diode device and a manufacturing method of a cooling substrate. The light emitting diode device comprises a substrate, an LED chip, at least one welding wire, and a fluorescence material layer, wherein at least one electrode is formed on the substrate; the LED chip is fixedly arranged on the substrate and at least one welding pad is formed on the LED chip; the at least one welding wire is electrically connected with the welding pad and the electrode; the fluorescence material layer covers the LED chip; the heat conductivity of the substrate is 80 to 120W/mK; and the color rendering index of the light emitting diode device at 2600k to 3700k corresponding color temperature (CCT) is larger than 90.
Description
Technical field
The present invention relates to a kind of LED package, particularly a kind of light-emitting diode assembly of conductive coefficient lower than the substrate of 120W/mK that include.
Background technology
Light-emitting diode (LED) has the advantages such as low power consuming, power saving, life-span be long, durable, thereby replacement traditional lighting is become to following lighting source by each side is good.But along with increased power, the used heat of electric heating that LED produces stream cannot effectively shed, and causes luminous efficiency degradation.LED luminous efficiency can reduce along with service time and number of times, and too high junction temperature can be accelerated the decay of LED luminous efficiency, therefore dispel the heat into a large problem of LED development.
Select high heat-radiating substrate can improve the heat radiation of LED.The common substrate of LED has four classes conventionally: printed circuit board (PCB) (PCB), metal-cored circuit board (MCPCB), taking ceramic material as main ceramic substrate, cover copper ceramic substrate.Wherein, covering copper ceramic substrate is that Copper Foil is directly sintered to ceramic surface, and a kind of composite base plate forming.PCB and MCPCB can be used in the product of general LED application.When not excessive unit density of heat flow rate is higher, LED heat-radiating substrate mainly adopts metal substrate and ceramic substrate two class enhance heats.
Metal substrate, taking aluminium (Al) and copper (Cu) as material, can be divided into " metal base (metal base) ", " metal stamen (metal core) ".The many one insulating barrier processing of still needing of metal substrate technique.Another kind of is that to adopt the insulating material such as AlN, SiC, BeO be main ceramic substrate, because material own just insulate, therefore without the need for the processing of insulating barrier.In addition, the breakdown voltage that ceramic substrate can bear, (Break-down voltage) is also higher for puncture voltage.And ceramic substrate matched coefficients of thermal expansion is good, can reduce that thermal stress and thermal deformation produce is also advantage, is quite applicable to LED application.
The production method that the yellow phosphor powder of blue-ray LED collocation YAG is at present general white light LEDs, and this packaged type will make LED lack the light source of green and red wave band, causes white light to present the situation of cold white light, cannot reach the specification requirement of warm white product.
Summary of the invention
An object of the present invention, be to provide a kind of light-emitting diode assembly, utilization includes the substrate that conductive coefficient is 80 ~ 120W/mK, can reach the requirement of production reliability, and utilize a little temperature increase, LED light source is moved towards long wavelength, reach the characteristic of warm white, more promote the usefulness of color rendering.This is to change because semiconductor material characteristic can vary with temperature, and in the time that temperature raises, material energy gap increases, and makes output light source produce Red Shift Phenomena, and optical spectrum moves towards long wavelength.
In order to reach above-mentioned object, an aspect of the present invention provides a kind of light-emitting diode assembly.This light-emitting diode assembly comprises: substrate forms at least one electrode on substrate; LED chip, is fixedly arranged on substrate, and on LED chip, forms at least one weld pad; At least one bonding wire, is electrically connected weld pad and electrode; And fluorescent material layer, cover on LED chip, wherein, it is 80 ~ 120W/mK that substrate has conductive coefficient, and light-emitting diode assembly is greater than 90 in the color rendering index of the relative colour temperature of 2600k ~ 3700k (CCT).
Those weld pads can be positioned on the same face of LED chip, also can be positioned on the not coplanar of LED chip.Aforesaid substrate can be metal substrate or ceramic substrate.Or substrate can be and covers copper ceramic substrate.
Another aspect of the present invention provides a kind of light-emitting diode assembly.This light-emitting diode assembly comprises: LED chip, has first surface and relative with first surface second; The first electrode and the second electrode are respectively formed at the firstth district and the Second Region on the first surface of LED chip; The first weld pad and the second weld pad, a surface that is positioned at substrate is upper, and the first weld pad and the first electrode are electrically connected, and the second weld pad and the second electrode are electrically connected; The first pad and the second pad, lay respectively on another surface of substrate; One first conductive pole, is arranged in this substrate, for connecting this first weld pad and this first pad; One second conductive pole, is arranged in this substrate, for connecting this second weld pad and this second pad; And a fluorescent material layer, this second of covering this LED chip is upper, and wherein, it is 80 ~ 120W/mK that this substrate has conductive coefficient, and the color rendering index of this light-emitting diode assembly under the relative colour temperature of 2600k ~ 3700k is greater than 90.Aforesaid substrate can be metal substrate or ceramic substrate.Or substrate can be and covers copper ceramic substrate.
Adopt conductive coefficient to be greater than the light-emitting diode assembly of the expensive substrate of 120W/mK compared to prior art in order to pursue high heat radiation, light-emitting diode assembly of the present invention can reach good product reliability and high color rendering, reaches the advantage reducing costs simultaneously.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Brief description of the drawings
The schematic sectional view of Fig. 1 first embodiment of the present invention light-emitting diode assembly;
The schematic sectional view of Fig. 2 second embodiment of the present invention light-emitting diode assembly;
The schematic sectional view of Fig. 3 third embodiment of the present invention light-emitting diode assembly;
The junction temperature of Fig. 4 InGaN light-emitting diode assembly and Life Relation figure;
The characteristics of luminescence figure of Fig. 5 device B;
The characteristics of luminescence figure of Fig. 6 device A; And
Fig. 7 is in the adhesion test result of the substrate surface copper electroplating layer of different size, different surfaces structure.
Wherein, Reference numeral
100 substrates
102 electrodes
104 electrodes
200LED chip
202 weld pads
203 weld pads
204 bonding wires
300 fluorescent material layers
400LED chip
402 first surfaces
404 second
412 first electrodes
414 second electrodes
416 first weld pads
418 second weld pads
420 substrates
422 first conductive poles
423 second conductive poles
424 first pads
426 second pads
428 fluorescent material layers
Embodiment
Relevant detailed description of the present invention and technology contents, coordinate brief description of the drawings as follows, and appended accompanying drawing only provides reference and explanation use, is not used for the present invention to be limited.
Fig. 1 is according to the schematic sectional view of the light-emitting diode assembly of one first embodiment of the present invention.Light-emitting diode assembly of the present invention, comprises: substrate 100 forms electrode 102 and electrode 104 on substrate 100; LED chip 200, is fixedly arranged on substrate 100, and on LED chip 200, forms two weld pads 202,203; Article two, bonding wire 204, is electrically connected respectively weld pad 202 and electrode 104 and weld pad 203 and electrode 102; And a fluorescent material layer 300, cover on LED chip 200.Wherein, it is 80 ~ 120W/mK that substrate 100 has conductive coefficient, and the color rendering index of light-emitting diode assembly under the relative colour temperature of 2600k ~ 3700k is greater than 90.
LED chip 200 is for using solid to be installed on substrate 100, substrate 100 can be metal substrate, ceramic substrate or covers copper ceramic substrate, wherein metal substrate is made up of at least one in the metal material such as copper base, aluminium base, and ceramic substrate can be aluminum oxide substrate, aluminium nitride substrate or silicon substrate.Above-mentioned used solid can be the combination of elargol, golden tin solder or above-mentioned material.Light-emitting diode of the present invention also comprises an outer cladding body (not shown), is the pedestal with a coated substrate 100, LED chip 200, bonding wire 204 and flourescent film 300.
The weld pad 202 and 203 of those different types (P type and N-type) be positioned at LED chip 200 the same face but in Different Plane, and on the dual-side of LED chip 200 end faces, utilize bonding wire 204 to be electrically connected respectively weld pad 202 and electrode 104 and weld pad 203 and electrode 102 respectively.
Then, refer to Fig. 2, Fig. 2 is according to the cross-sectional schematic of the light-emitting diode assembly of the second embodiment of the present invention.In this embodiment, as shown in Figure 2, the weld pad 202 and 203 of those different types (P type and N-type) is to be positioned on the not coplanar of LED chip 200, and the pattern weld pad 202 on a side of LED chip 200 end faces, to utilize bonding wire 204 to be electrically connected weld pad 202 and electrode 104,203 direct contact substrates 100 of weld pad of another pattern on LED chip bottom surface, to complete electric connection, wherein this embodiment need not make electrode 102.Wherein, it is 80 ~ 120W/mK that substrate 100 has conductive coefficient, and the color rendering index of light-emitting diode assembly under the relative colour temperature of 2600k ~ 3700k is greater than 90.
LED chip 200 is for using solid to be installed on substrate 100, substrate 100 can be metal substrate, ceramic substrate, covers copper ceramic substrate, composite substrate or semiconductor substrate, wherein metal substrate is made up of at least one in the metal material such as copper base, aluminium base, ceramic substrate can be aluminum oxide substrate, aluminium nitride substrate or zirconia substrate, composite substrate can be silicon nitride, carborundum, and semiconductor substrate can be silicon substrate.Above-mentioned used solid can be the combination of elargol, golden tin solder or above-mentioned material.Light-emitting diode of the present invention also comprises an outer cladding body (not shown), is the pedestal with a coated substrate 100, LED chip 200, bonding wire 204 and flourescent film 300.
Then, refer to Fig. 3, Fig. 3 is according to the cross-sectional schematic of the light-emitting diode assembly of the third embodiment of the present invention.In this embodiment, as shown in Figure 3, this light-emitting diode assembly comprises: LED chip 400, has first surface 402 and relative with first surface 402 second 404; The first electrode 412 and the second electrode 414 are respectively formed at the firstth district and the Second Region on the first surface 402 of LED chip 400; The first weld pad 416 and the second weld pad 418, a surface that is positioned at substrate 420 is upper, and the first weld pad 416 and the first electrode 412 are electrically connected, and the second weld pad 418 and the second electrode 414 are electrically connected; The first pad 424 and the second pad 426, lay respectively on another surface of substrate 420; The first conductive pole 422, is arranged in substrate 420, for connecting this first weld pad 416 and the first pad 424; The second conductive pole 423, is arranged in substrate 420, for connecting the second weld pad 418 and the second pad 426; And fluorescent material layer 428, be to cover on second 404 of LED chip 400, wherein, it is 80 ~ 120W/mK that substrate 420 has conductive coefficient, and the color rendering index of light-emitting diode assembly under the relative colour temperature of 2600k ~ 3700k is greater than 90.
Substrate 420 can be metal substrate, ceramic substrate, covers copper ceramic substrate, composite substrate or semiconductor substrate, wherein metal substrate is made up of at least one in the metal material such as copper base, aluminium base, ceramic substrate can be aluminum oxide substrate, aluminium nitride substrate or zirconia substrate, composite substrate can be silicon nitride, carborundum, and semiconductor substrate can be silicon substrate.
(embodiment)
Analyze with light-emitting diode assembly A and light-emitting diode assembly B, device A adopts aluminum oxide substrate, and device B adopts aluminium nitride substrate, and both are only in baseplate material difference, and all the other manufacturing specifications are all identical.The thermal resistance of device A is 9 DEG C/W, and the thermal resistance of device B is 4 DEG C/W, so device A is 5 DEG C/W higher than device B, and the conductive coefficient of aluminium nitride is 140 ~ 180W/mK, and the conductive coefficient of aluminium oxide is 30W/mK, so aluminium nitride is higher than aluminium oxide ~ 145W/mK.Calculate and know by above two numerical value, need the thermal conduction characteristic of increase ~ 30W/mK for reducing the thermal resistance of every 1 DEG C/W.
As shown in Figure 4, the product of high wattage (more than 1A) is the characteristic of possessing 60,000 hour life-span, and junction temperature need be lower than 132 DEG C.Again in the present embodiment, the junction temperature of the alumina packaging of device A is that 113.35 DEG C, the aluminium nitride encapsulation of device B are 103.6 DEG C; If separately using 100W/mK aluminium nitride substrate to encapsulate junction temperature after test is 114.94 DEG C.Therefore use the substrate of the about 100W/mK of conductive coefficient also can reach identical good production reliability.
Semiconductor material characteristic can vary with temperature and change, all the more so on LED chip.In the time that temperature raises, semi-conducting material can produce Red Shift Phenomena (Red shif), also refers to that luminous frequency spectrum can move to long wavelength (ruddiness-warm colour system).Device A and device B all make with the yellow phosphor powder of the mixed YAG of blue-ray LED, and the LED element of this encapsulation specification lacks green glow and ruddiness frequency spectrum, and therefore difficulty reaches the requirement that warm colour is illuminating product.As shown in Figure 5, device B is in the warm white frequency spectrum of the relative colour temperature of 2600-3700k (CCT) and cold white light without big-difference too, and its products C RI is 80; And as shown in Figure 6, device A has at the frequency spectrum of warm white and obviously moves 20nm toward long wavelength, and CRI can reach more than 90, and white light has more warm colour system, and color rendering promotes more, and the loyalty of color energy is presented., slightly rising of junction temperature will contribute to the lifting of color rendering.
Therefore, substrate (for example aluminium nitride substrate of 100W/mK left and right) by above-described embodiment susceptible of proof using conductive coefficient as 80 ~ 120W/mK is as the heat radiation support plate of light-emitting diode, not only can reach the requirement that high wattage is thrown light on to life of product, and more promote for color rendering, make light source more true to nature to the performance of color, mainly can effectively reduce by 40% ceramic substrate cost, make product in market, have more the advantage of price and technology.
In addition, the present invention further proposes to be applicable to the technique that conductive coefficient is the light-emitting component heat-radiating substrate of 80 ~ 120W/mK, the ceramic substrate reducing due to conductive coefficient is ground or the impact of the factor such as sintering processing, so that material lattice structure is more inconsistent, make in subsequent thin film technique, film, in when deposition continuous level structure of cannot growing up in a plane, finally affects metallic film adhesive force.After the concentrated research of inventor, before thin-film technique, first substrate is carried out to alligatoring, will make material lattice structure better complete, to increase film adhesive ability.Above-mentioned subsequent thin film technique is ceramic substrate DPC (the Direct Plate Copper) techniques such as the sputter Seed Layer, press mold exposure imaging, electro-coppering circuit, stripping etching, surface treatment of prior art.
The present invention, for the manufacture method of the heat-radiating substrate of light-emitting component, comprises the following step: a substrate is provided, and wherein the conductive coefficient of substrate is 80 ~ 120W/mK; Substrate is carried out to a roughening process; And on substrate, form a line pattern, using the heat-radiating substrate as light-emitting component.The step that forms line pattern on substrate is for example to remove method or semi-additive process forms copper wire in substrate; Roughening process is to use for example NaOH of alkaline medicinal liquid or KOH aqueous solution etching substrates.
Fig. 7 is the adhesion test result at 70 ~ 100 microns of copper layers of substrate plating surface of different size, different surfaces structure.Result shows without substrate attachment scarce capacity or the extreme difference of alligatoring, and no matter is 1x1mm or 2x2mm substrate after roughening process, and adhesive force all has showing and promotes, and confirms that above-mentioned roughening process can promote the film adhesive ability of substrate subsequent thin film technique really.
Certainly; the present invention also can have other various embodiments; in the situation that not deviating from spirit of the present invention and essence thereof; those of ordinary skill in the art are when making according to the present invention various corresponding changes and distortion, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (10)
1. a light-emitting diode assembly, is characterized in that, comprising:
One substrate forms at least one electrode on this substrate;
One LED chip, is arranged on this substrate, and forms at least one weld pad on this LED chip;
At least one bonding wire, is electrically connected this weld pad and this electrode; And
One fluorescent material layer, covers on this LED chip,
Wherein, it is 80 ~ 120W/mK that this substrate has conductive coefficient, and the color rendering index of this light-emitting diode assembly under the relative colour temperature of 2600k ~ 3700k is greater than 90.
2. light-emitting diode assembly according to claim 1, is characterized in that, those weld pads are positioned at the same face of this LED chip or not on coplanar.
3. according to the light-emitting diode assembly of claim 1, it is characterized in that, the material of this substrate is aluminium nitride or silicon nitride, and the conductive coefficient 80 ~ 100W/mK of this substrate.
4. light-emitting diode assembly according to claim 1, is characterized in that, this LED chip is for using solid to be fitted on this substrate.
5. light-emitting diode assembly according to claim 1, is characterized in that, this substrate is metal substrate, ceramic substrate, cover copper ceramic substrate, composite substrate or semiconductor substrate.
6. according to the light-emitting diode assembly described in any one in claim 1 to 5, it is characterized in that, also comprise an outer cladding body, there is the pedestal of a coated substrate, LED chip, bonding wire and fluorescent material layer.
7. a light-emitting diode assembly, is characterized in that, comprising:
One LED chip, has a first surface and relative with this first surface one second;
One first electrode and one second electrode are respectively formed at one first district and the Second Region on this first surface of this LED chip;
One first weld pad and one second weld pad, a surface that is positioned at a substrate is upper, and this first weld pad and this first electrode are electrically connected, and this second weld pad and this second electrode are electrically connected;
One first pad and one second pad, lay respectively on another surface of this substrate;
One first conductive pole, is arranged in this substrate, for connecting this first weld pad and this first pad;
One second conductive pole, is arranged in this substrate, for connecting this second weld pad and this second pad; And
One fluorescent material layer, this second of covering this LED chip is upper,
Wherein, it is 80 ~ 120W/mK that this substrate has conductive coefficient, and this light-emitting diode assembly is greater than 90 in the color rendering index of the relative colour temperature of 2600k ~ 3700k.
8. light-emitting diode assembly according to claim 7, is characterized in that, this substrate is metal substrate, ceramic substrate, cover copper ceramic substrate, composite substrate or semiconductor substrate.
9. for a manufacture method for the heat-radiating substrate of light-emitting component, it is characterized in that, comprise the following step:
One substrate is provided, and wherein the conductive coefficient of this substrate is 80 ~ 120W/mK;
This substrate is carried out to a roughening process; And
On this substrate, form a line pattern, using the heat-radiating substrate as this light-emitting component.
10. the manufacture method of the heat-radiating substrate for light-emitting component according to claim 9, is characterized in that, this roughening process is for using this substrate of alkaline medicinal liquid etching.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310025965.1A CN103943768A (en) | 2013-01-22 | 2013-01-22 | Light emitting diode device and manufacturing method of cooling substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310025965.1A CN103943768A (en) | 2013-01-22 | 2013-01-22 | Light emitting diode device and manufacturing method of cooling substrate |
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| CN103943768A true CN103943768A (en) | 2014-07-23 |
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Application publication date: 20140723 |