CN103940712B - Haze particle detection chip and manufacture method thereof - Google Patents
Haze particle detection chip and manufacture method thereof Download PDFInfo
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- CN103940712B CN103940712B CN201410167848.3A CN201410167848A CN103940712B CN 103940712 B CN103940712 B CN 103940712B CN 201410167848 A CN201410167848 A CN 201410167848A CN 103940712 B CN103940712 B CN 103940712B
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Abstract
The invention provides a kind of haze particle detection chip and manufacture method thereof, this chip comprises layer structure, is followed successively by from the bottom to the superiors: substrate of glass, CdSe film, noble metal nano lattice array, silver are to dressing electrode system, aluminum oxide film and anti-reflection film.Adopt haze particle detection chip provided by the invention, increase photosensitive area while the less photosensitive region width of guarantee being can be implemented in dressing electrode system by silver as far as possible, less photosensitive region width can reduce the response time of chip, and by noble metal nano lattice array amplifying optical signals, thus improve the detection sensitivity of chip.
Description
Technical field
The present invention relates to a kind of air monitoring field, particularly relate to a kind of haze particle detection chip and manufacture method thereof.
Background technology
Current, become increasingly conspicuous with the regional atmospheric environment problem that pellet (PM10), fine particle (PM2.5) they are characteristic contamination.Along with the deep propelling of China's industrialization, urbanization, energy consumption continues to increase, and prevention and control of air pollution pressure continues to strengthen.Air quality affects our healthy and daily life as a part indispensable in environmental problem, when Current Chinese Urban air quality constantly worsens, needs an effective method badly to supervise the pollution of air.
Light scattering method detection haze particle is that one is proved to be effective air pollution detecting method.Light scattering method utilizes the particle in air to produce the phenomenon of scattering to the laser of different wave length, utilizes the light signal of scattering to be converted into electric signal, by relevant mathematical formulae, converts it into particle quantity actual in air.Most is representational is the Dylos-DC1700 that Dylos company of the U.S. releases, and it selects green laser as LASER Light Source, by photochromics, light signal is converted into the electric signal of low and high level, and then rough Statistics goes out the quantity of contained particulate matters in air.
Summary of the invention
The object of this invention is to provide a kind of haze particle detection chip and manufacture method thereof, utilize the haze particle in the effective atmospheric sounding of a kind of novel detection chip.
For achieving the above object, the invention provides a kind of haze particle detection chip, be applied to the airborne particulate article inspection device comprising laser equipment, haze particle detection chip and display device, described laser equipment is used for Emission Lasers, and described laser is by the surface of described haze particle detection chip; Described haze particle detection chip, for receiving the laser be scattered, produces electric signal transmission of electric signals to described display device; Described display device is for the treatment of described electric signal and show the result of detection of haze particle;
Described haze particle detection chip comprises layer structure, is followed successively by from the bottom to the superiors: substrate of glass, CdSe film, noble metal nano lattice array, silver to dressing electrode system, aluminum oxide film and anti-reflection film, wherein,
The centre wavelength of described anti-reflection film is identical with the wavelength of described laser, for passing through described laser;
Described aluminum oxide film is used for by described laser, and air-isolation avoids oxygen to the damage of internal layer membrane and nanometer lattice row;
Described silver to dressing electrode system comprise be parallel to each other but Uncrossed silver-colored dressing membrane electrode and silver-colored dressing film to electrode, for producing electric signal under laser action;
Described noble metal nano lattice array is used for being amplified light signal by plasma resonance effect, and the laser signal after transmission amplification is to described CdSe film;
Described CdSe film produces electric signal under being used for the effect of laser signal after amplification, transmits described electric signal to described display device;
Described substrate of glass is for carrying superstructure and insulated electro signal.
Preferably, the centre wavelength of described anti-reflection film is 605nm.
Preferably, described noble metal nano dot matrix is classified as gold or silver nano lattice row.
Preferably, the thickness of described CdSe film is 150-200 nanometer
Another aspect of the present invention also provides a kind of manufacture method of haze particle detection chip, comprising:
Laser Molecular Beam Epitaxy is adopted to prepare CdSe film on the glass substrate;
On the surface of described CdSe film, noble metal nano lattice array is set;
Mask vacuum is adopted to steam method at described noble metal nano lattice array surface preparation silver to comb electrode system;
Technique for atomic layer deposition is adopted to prepare aluminum oxide film on the surface of silver to comb electrode system;
Described aluminum oxide film prepares anti-reflection film.
Preferably, described noble metal nano dot matrix is classified as gold or silver nano lattice row.
Preferably, the thickness of described CdSe film is 150-200 nanometer.
Based on technique scheme, advantage of the present invention is:
A kind of novel haze particle detection chip is provided, increase photosensitive area while the less photosensitive region width of guarantee being can be implemented in dressing electrode system by silver as far as possible, less photosensitive region width can reduce the response time of chip, and by noble metal nano lattice array amplifying optical signals, thus improve the detection sensitivity of chip.
Accompanying drawing explanation
Fig. 1 is the structural representation of airborne particulate article inspection device of the prior art;
Fig. 2 illustrates the structural representation of haze particle detection chip provided by the invention;
Fig. 3 illustrates that silver in haze particle detection chip provided by the invention is to the structural representation of dressing electrode system;
Fig. 4 illustrates the block diagram of the manufacture method of haze particle detection chip provided by the invention.
Embodiment
For making object of the invention process, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is further described in more detail.In the accompanying drawings, same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Described embodiment is the present invention's part embodiment, instead of whole embodiments.Be exemplary below by the embodiment be described with reference to the drawings, be intended to for explaining the present invention, and can not limitation of the present invention be interpreted as.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.Below in conjunction with accompanying drawing, embodiments of the invention are described in detail.
When laser beam is by light detecting chip surface, according to the principle of light scattering, the particle in air and laser action produce scattered light, and the concentration of scattered light intensity and particle is directly proportional.According to film detect the concentration that scattered light intensity just can draw particulate in air.
A kind of haze particle detection chip is provided in the present invention, is applied to the airborne particulate article inspection device shown in Fig. 1.As shown in Figure 1, this airborne particulate article inspection device 10 comprises the airborne particulate article inspection device 13 of laser equipment 11, haze particle detection chip 12 and display device.
Wherein, laser equipment 11 is for Emission Lasers, and described laser is by the surface of described haze particle detection chip.Haze particle detection chip 12, for receiving the laser be scattered, produces electric signal transmission of electric signals to described display device 13.Display device 13 is for the treatment of described electric signal and show the result of detection of haze particle.
Fig. 2 illustrates the structure of haze particle detection chip provided by the invention.As shown in Figure 2, this haze particle detection chip comprises layer structure, is followed successively by from the bottom to the superiors: substrate of glass 21, CdSe film 22, noble metal nano lattice array 23, silver are to dressing electrode system 24, aluminum oxide film 25 and anti-reflection film 26.
In the structure shown in Fig. 2, the centre wavelength of described anti-reflection film 26 is identical with the wavelength of described laser, for passing through described laser.In the present invention, the wavelength of laser is 605nm.
Described aluminum oxide film 25 is for by described laser, and air-isolation avoids oxygen to the damage of internal layer membrane and nanometer lattice row, thus ensures the stability of chip.
Described silver to dressing electrode system 24 comprise be parallel to each other but Uncrossed silver-colored dressing membrane electrode and silver-colored dressing film to electrode, for collecting the electric signal that described CdSe film produces, by electric signal transmission to described display device.Laser enters understructure by silver to dressing electrode system 24 and arrives CdSe film, and the charge carrier (electric signal) that CdSe film produces to be collected dressing electrode system 24 by silver and transferred to display device.Because silver is arranged on CdSe film to the electrode of dressing electrode system 24 more equably, thus make silver to the electrode of dressing electrode system 24 and the distance of CdSe film charge carriers short, reduce the loss of charge carrier in traveling process, spacing simultaneously between electrode is even and little, charge carrier displacement between electrodes can be reduced, thus reach the effect of the response time reducing detection chip to greatest extent.
Fig. 3 illustrates the schematic diagram of this silver to dressing electrode system 24.As shown in Figure 3, the silver-colored dressing membrane electrode 241 that silver comprises dressing electrode system 26 and silver-colored dressing film have identical dressing structure to electrode 242, but are parallel to each other and do not intersect.This structure increases photosensitive area while can be implemented in the less photosensitive region width of guarantee as far as possible, and less photosensitive region width can reduce the response time of chip, and larger photosensitive area is conducive to improving detection sensitivity.
Described noble metal nano lattice array 23 is for amplifying light signal by plasma resonance effect, and the laser signal after transmission amplification is to described CdSe film 22.Noble metal nano dot matrix is classified as gold or silver nano lattice row, can also be the nanometer lattice row of gold and silver mixing.
Produce electric signal under the effect of described CdSe film 22 for laser signal after amplification, transmit described electric signal to described silver to dressing electrode system.Preferably, the thickness of described CdSe film is 150-200 nanometer.
Described substrate of glass 21, for carrying superstructure and insulated electro signal, avoids electric signal to transmit outside described display device.
Adopt haze particle detection chip provided by the invention, increase photosensitive area while the less photosensitive region width of guarantee being can be implemented in dressing electrode system by silver as far as possible, less photosensitive region width can reduce the response time of chip, and by noble metal nano lattice array amplifying optical signals, thus improve the detection sensitivity of chip.
Fig. 4 provides a kind of manufacture method of haze particle detection chip.As shown in Figure 4, the method comprises:
Step 401, adopts Laser Molecular Beam Epitaxy to prepare CdSe film on the glass substrate.
Need to illustrate, according to the needs detecting particle and intend using light source required in air, photosensitive material can be selected flexibly.Select energy gap at the CdSe semiconductor material of 2.2eV-3.0eV in the present invention.
Step 402, arranges noble metal nano lattice array on the surface of described CdSe film.
As mentioned above, noble metal nano lattice array can be gold or silver nano lattice row, can also be the nanometer lattice row of gold and silver mixing.
Can adopt any-mode that noble metal nano lattice array is set on the surface of described CdSe film, herein this specifically be arranged technology and is not limited.Such as, can adopt magnetron sputtering technique that noble metal nano lattice array is set on the surface of CdSe film, wherein, can also adopt mask plate technology that the pattern of noble metal nano lattice array is set.
Step 403, adopts mask vacuum to steam method at described noble metal nano lattice array surface preparation silver to comb electrode system.
Step 404, adopts technique for atomic layer deposition to prepare aluminum oxide film on the surface of silver to comb electrode system.Under the highly sensitive prerequisite of guarantee, prepare alumina protective layer to ensure the stability of film on thin film chip surface.
Step 405, aluminum oxide film prepares anti-reflection film.
The centre wavelength of anti-reflection film is identical with the wavelength of described laser, and for passing through described laser, the centre wavelength of such as this anti-reflection film is 605nm.
Adopt the manufacture method of haze particle detection chip provided by the invention, increase photosensitive area while the less photosensitive region width of guarantee being can be implemented in dressing electrode system by silver as far as possible, less photosensitive region width can reduce the response time of chip, and by noble metal nano lattice array amplifying optical signals, thus improve the detection sensitivity of chip.
Finally it is to be noted: above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit.Although with reference to previous embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature; These amendments or replace, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical schemes, and in the middle of the technical scheme scope that should be encompassed in request of the present invention protection.
Claims (7)
1. a haze particle detection chip, be applied to the airborne particulate article inspection device comprising laser equipment, haze particle detection chip and display device, described laser equipment is used for Emission Lasers, and described laser is by the surface of described haze particle detection chip; Described haze particle detection chip, for receiving the laser be scattered, produces electric signal transmission of electric signals to described display device; Described display device is for the treatment of described electric signal and show the result of detection of haze particle; It is characterized in that,
Described haze particle detection chip comprises layer structure, is followed successively by from the bottom to the superiors: substrate of glass, CdSe film, noble metal nano lattice array, silver to dressing electrode system, aluminum oxide film and anti-reflection film, wherein,
The centre wavelength of described anti-reflection film is identical with the wavelength of described laser, for reducing the laser that is scattered by reflection strength during described haze particle detection chip surperficial, to greatest extent by described laser;
Described aluminum oxide film is used for by described laser, and air-isolation avoids oxygen to the damage of internal layer membrane and nanometer lattice row;
Described silver to dressing electrode system comprise be parallel to each other but Uncrossed silver-colored dressing membrane electrode and silver-colored dressing film to electrode, for collecting the electric signal that described CdSe film produces, by electric signal transmission to described display device;
Described noble metal nano lattice array is used for being amplified laser signal by surface plasma body resonant vibration effect, and the laser signal after transmission amplification is to described CdSe film;
Described CdSe film produces electric signal under being used for the effect of laser signal after amplification;
Described substrate of glass is for carrying superstructure and insulating to described electric signal.
2. haze particle detection chip as claimed in claim 1, it is characterized in that, the centre wavelength of described anti-reflection film is 605nm.
3. haze particle detection chip as claimed in claim 1, is characterized in that, described noble metal nano dot matrix is classified as gold or silver nano lattice row.
4. haze particle detection chip as claimed in claim 1, it is characterized in that, the thickness of described CdSe film is 150-200 nanometer.
5. a manufacture method for haze particle detection chip according to claim 1, is characterized in that, comprising:
Laser Molecular Beam Epitaxy is adopted to prepare CdSe film on the glass substrate;
On the surface of described CdSe film, noble metal nano lattice array is set;
Mask vacuum is adopted to steam method at described noble metal nano lattice array surface preparation silver to comb electrode system;
Technique for atomic layer deposition is adopted to prepare aluminum oxide film on the surface of silver to comb electrode system;
Described aluminum oxide film prepares anti-reflection film.
6. method as claimed in claim 5, is characterized in that, described noble metal nano dot matrix is classified as gold or silver nano lattice row.
7. method as claimed in claim 5, it is characterized in that, the thickness of described CdSe film is 150-200 nanometer.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101339128A (en) * | 2008-08-27 | 2009-01-07 | 中国科学院光电技术研究所 | Surface plasma resonance image-forming nanostructure array chip preparation method |
| CN101504360A (en) * | 2009-03-03 | 2009-08-12 | 中国科学院光电技术研究所 | Organic gas sensing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100356529B1 (en) * | 2000-06-27 | 2002-10-19 | 김성훈 | Micro-array UV-visible fluorescent spectro-photometer |
| US7745001B2 (en) * | 2004-03-23 | 2010-06-29 | University Of New Orleans Research And Technology Foundation, Inc. | Synthesis of nanoassemblies containing luminescent quantum dots and magnetic nanoparticles |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101339128A (en) * | 2008-08-27 | 2009-01-07 | 中国科学院光电技术研究所 | Surface plasma resonance image-forming nanostructure array chip preparation method |
| CN101504360A (en) * | 2009-03-03 | 2009-08-12 | 中国科学院光电技术研究所 | Organic gas sensing method |
Non-Patent Citations (1)
| Title |
|---|
| 银纳米阵列直径对SERS增强效果的影响;张君梦等;《光散射学报》;20110331;第23卷(第1期);全文 * |
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Effective date of registration: 20141224 Address after: 100048 Beijing West Third Ring Road, Haidian District, No. 105 Applicant after: Capital Normal Univ. Address before: 100048 Haidian District West Third Ring Road North, Capital Normal University, Department of physics,, Beijing Applicant before: Zhang Lisheng |
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