CN103940712A - Haze particulate matter detection chip and manufacturing method thereof - Google Patents
Haze particulate matter detection chip and manufacturing method thereof Download PDFInfo
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- CN103940712A CN103940712A CN201410167848.3A CN201410167848A CN103940712A CN 103940712 A CN103940712 A CN 103940712A CN 201410167848 A CN201410167848 A CN 201410167848A CN 103940712 A CN103940712 A CN 103940712A
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- film
- detection chip
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- laser
- particle detection
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- 238000001514 detection method Methods 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000013618 particulate matter Substances 0.000 title abstract 4
- 229910052709 silver Inorganic materials 0.000 claims abstract description 31
- 239000004332 silver Substances 0.000 claims abstract description 31
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 30
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 26
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000002245 particle Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 25
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- 238000007689 inspection Methods 0.000 claims description 6
- 239000002105 nanoparticle Substances 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000002096 quantum dot Substances 0.000 claims description 5
- 230000008054 signal transmission Effects 0.000 claims description 5
- 241000531807 Psophiidae Species 0.000 claims description 3
- 230000003321 amplification Effects 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000010025 steaming Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 43
- 230000004044 response Effects 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 3
- 239000002800 charge carrier Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000003915 air pollution Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
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- Investigating Or Analysing Materials By Optical Means (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The invention provides a haze particulate matter detection chip and a manufacturing method of the haze particulate matter detection chip. The chip comprises a layered structure consisting of a glass substrate, a CdSe thin film, a noble metal nano lattice array, a silver paired dressing electrode system, an aluminum oxide thin film and an anti-reflection film in sequence from the bottommost layer to the uppermost layer. Due to the adoption of the haze particulate matter detection chip provided by the invention, through the silver paired dressing electrode system, small width of a light sensing region is guaranteed, and the light sensing area is enlarged as much as possible; due to the small width of the light sensing region, the response time of the chip can be shortened; a light signal is amplified through the noble metal nano lattice array, so that the detection sensitivity of the chip is improved.
Description
Technical field
The present invention relates to a kind of air monitoring field, particularly relate to a kind of haze particle detection chip and manufacture method thereof.
Background technology
Current, become increasingly conspicuous taking pellet (PM10), fine particle (PM2.5) as the regional atmospheric environment problem of feature pollutant.Along with the deep propelling of China's industrialization, urbanization, energy consumption continues to increase, and prevention and control of air pollution pressure continues to strengthen.Air quality affects our healthy and daily life as a part indispensable in environmental problem, in the situation that Current Chinese Urban air quality constantly worsens, need the pollution that an effective method is supervised atmosphere badly.
It is that one is proved to be effective air pollution detecting method that light scattering method is surveyed fog particle.Light scattering method utilizes airborne particle the laser of different wave length to be produced to the phenomenon of scattering, utilizes the light signal of scattering to be converted into electric signal, by relevant mathematical formulae, converts it into particle quantity actual in air.The most representative is the Dylos-DC1700 that Dylos company of the U.S. releases, and it selects green laser as LASER Light Source, by photochromics, light signal is converted into the electric signal of low and high level, and then rough Statistics goes out the quantity of contained particulate matters in air.
Summary of the invention
The object of this invention is to provide a kind of haze particle detection chip and manufacture method thereof, utilize the haze particle in the effective atmospheric sounding of a kind of novel detection chip.
For achieving the above object, the invention provides a kind of haze particle detection chip, be applied to the airborne particulate article inspection device that comprises laser equipment, fog particle detection chip and display device, described laser equipment is for Emission Lasers, and described laser is by the surface of described fog particle detection chip; Described fog particle detection chip, for receiving the laser being scattered, produces electric signal transmission of electric signals to described display device; Described display device shows the result of detection of fog particle for the treatment of described telecommunications trumpeter;
Described fog particle detection chip comprises layer structure, from the bottom to the superiors, is followed successively by: substrate of glass, CdSe film, noble metal nano lattice array, silver-colored in dressing electrode system, aluminum oxide film and anti-reflection film, wherein,
The centre wavelength of described anti-reflection film is identical with described sharp light wavelength, for passing through described laser;
Described aluminum oxide film is for passing through described laser, and air-isolation is avoided the damage of oxygen to internal layer membrane and nanometer lattice row;
Described silver to dressing electrode system comprise be parallel to each other but Uncrossed silver-colored dressing membrane electrode and silver-colored dressing film to electrode, for produce electric signal under laser action;
Described noble metal nano lattice array is used for by plasma resonance effect, light signal being amplified, and transmits the extremely described CdSe film of laser signal after amplifying;
Under the effect of described CdSe film for the laser signal after amplification, produce electric signal, transmit described electric signal to described display device;
Described substrate of glass is used for carrying superstructure insulated electro signal.
Preferably, the centre wavelength of described anti-reflection film is 605nm.
Preferably, described noble metal nano dot matrix is classified gold or silver nanoparticle lattice array as.
Preferably, the thickness of described CdSe film is 150-200 nanometer
Another aspect of the present invention also provides a kind of manufacture method of fog particle detection chip, comprising:
Adopt Laser Molecular Beam Epitaxy in substrate of glass, to prepare CdSe film;
On the surface of described CdSe film, noble metal nano lattice array is set;
Adopt the mask vacuum method of steaming to prepare silver to comb electrode system on described noble metal nano lattice array surface;
Adopt technique for atomic layer deposition, at silver, aluminum oxide film is prepared in the surface of comb electrode system;
On described aluminum oxide film, prepare anti-reflection film.
Preferably, described noble metal nano dot matrix is classified gold or silver nanoparticle lattice array as.
Preferably, the thickness of described CdSe film is 150-200 nanometer.
Based on technique scheme, advantage of the present invention is:
A kind of novel haze particle detection chip is provided, can realize in ensureing less photosensitive region width and increase photosensitive area as far as possible dressing electrode system by silver, less photosensitive region width can reduce the response time of chip, and by noble metal nano lattice array amplifying optical signals, thereby the detection sensitivity of raising chip.
Brief description of the drawings
Fig. 1 is the structural representation of airborne particulate article inspection device of the prior art;
Fig. 2 illustrates the structural representation of haze particle detection chip provided by the invention;
Fig. 3 illustrates silver in the haze particle detection chip provided by the invention structural representation to dressing electrode system;
Fig. 4 illustrates the block diagram of the manufacture method of fog particle detection chip provided by the invention.
Embodiment
For making object of the invention process, technical scheme and advantage clearer, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is further described in more detail.In the accompanying drawings, same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Described embodiment is the present invention's part embodiment, instead of whole embodiment.Be exemplary below by the embodiment being described with reference to the drawings, be intended to for explaining the present invention, and can not be interpreted as limitation of the present invention.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.Below in conjunction with accompanying drawing, embodiments of the invention are elaborated.
When laser beam is by photodetection chip surface, according to the principle of light scattering, airborne particle and laser action produce scattered light, and the concentration of scattered light intensity and particle is directly proportional.Just can draw the concentration of particulate in air according to scattered light intensity that film is surveyed.
A kind of haze particle detection chip is provided in the present invention, is applied to the airborne particulate article inspection device shown in Fig. 1.As shown in Figure 1, this airborne particulate article inspection device 10 comprises the airborne particulate article inspection device 13 of laser equipment 11, fog particle detection chip 12 and display device.
Wherein, laser equipment 11 is for Emission Lasers, and described laser is by the surface of described fog particle detection chip.Fog particle detection chip 12, for receiving the laser being scattered, produces electric signal transmission of electric signals to described display device 13.Display device 13 shows the result of detection of fog particle for the treatment of described telecommunications trumpeter.
Fig. 2 illustrates the structure of haze particle detection chip provided by the invention.As shown in Figure 2, this haze particle detection chip comprises layer structure, from the bottom to the superiors, is followed successively by: substrate of glass 21, CdSe film 22, noble metal nano lattice array 23, silver are to dressing electrode system 24, aluminum oxide film 25 and anti-reflection film 26.
In the structure shown in Fig. 2, the centre wavelength of described anti-reflection film 26 is identical with described sharp light wavelength, for passing through described laser.In the present invention, sharp light wavelength is 605nm.
Described aluminum oxide film 25 is for by described laser, and air-isolation avoids the damage of oxygen to internal layer membrane and nanometer lattice row, thereby ensures the stability of chip.
Described silver to dressing electrode system 24 comprise be parallel to each other but Uncrossed silver-colored dressing membrane electrode and silver-colored dressing film to electrode, the electric signal producing for collecting described CdSe film, by electric signal transmission to described display device.Laser enters understructure by silver to dressing electrode system 24 and arrives CdSe film, and display device is collected and transferred to the charge carrier (electric signal) that CdSe film produces by silver to dressing electrode system 24.Because silver is arranged on CdSe film more equably to the electrode of dressing electrode system 24, thereby make the distance of charge carrier on the electrode of silver to dressing electrode system 24 and CdSe film short, reduce the loss of charge carrier in traveling process, spacing between electrode is even and little simultaneously, can reduce the displacement of charge carrier between two electrodes, thereby reach the effect of the response time that reduces to greatest extent detection chip.
Fig. 3 illustrates the schematic diagram of this silver to dressing electrode system 24.As shown in Figure 3, silver-colored dressing membrane electrode 241 and silver-colored dressing film that silver comprises dressing electrode system 26 have identical dressing structure to electrode 242, but are parallel to each other and do not intersect.This structure can realize in ensureing less photosensitive region width and increase photosensitive area as far as possible, and less photosensitive region width can reduce the response time of chip, and larger photosensitive area is conducive to improve detection sensitivity.
Described noble metal nano lattice array 23 is for by plasma resonance effect, light signal being amplified, and the laser signal of transmission after amplifying is to described CdSe film 22.Noble metal nano dot matrix is classified gold or silver nanoparticle lattice array as, can also be the nanometer lattice row of gold and silver mixing.
Under the effect of described CdSe film 22 for the laser signal after amplification, produce electric signal, transmit described electric signal to described silver to dressing electrode system.Preferably, the thickness of described CdSe film is 150-200 nanometer.
Described substrate of glass 21, for carrying superstructure insulated electro signal, avoids electric signal to transmit outside described display device.
Adopt haze particle detection chip provided by the invention, can realize in ensureing less photosensitive region width and increase photosensitive area as far as possible dressing electrode system by silver, less photosensitive region width can reduce the response time of chip, and by noble metal nano lattice array amplifying optical signals, thereby the detection sensitivity of raising chip.
Fig. 4 provides a kind of manufacture method of fog particle detection chip.As shown in Figure 4, the method comprises:
Step 401, adopts Laser Molecular Beam Epitaxy in substrate of glass, to prepare CdSe film.
Need explanation, according to the needs of required detection particle in air and plan use light source, can select flexibly photosensitive material.In the present invention, select energy gap at the CdSe of 2.2eV-3.0eV semiconductor material.
Step 402, arranges noble metal nano lattice array on the surface of described CdSe film.
As mentioned above, noble metal nano lattice array can be gold or silver nanoparticle lattice array, can also be the nanometer lattice row of gold and silver mixing.
Can adopt any-mode, on the surface of described CdSe film, noble metal nano lattice array is set, herein this specifically be arranged technology and is not limited.For example, can adopt magnetron sputtering technique, on the surface of CdSe film, noble metal nano lattice array is set, wherein, can also adopt mask plate technology that the pattern of noble metal nano lattice array is set.
Step 403, adopts the mask vacuum method of steaming to prepare silver to comb electrode system on described noble metal nano lattice array surface.
Step 404, adopts technique for atomic layer deposition, at silver, aluminum oxide film is prepared in the surface of comb electrode system.Ensureing under highly sensitive prerequisite, preparing alumina protective layer on thin film chip surface and ensure the stability of film.
Step 405 is prepared anti-reflection film on aluminum oxide film.
The centre wavelength of anti-reflection film is identical with described sharp light wavelength, and for passing through described laser, the centre wavelength of for example this anti-reflection film is 605nm.
Adopt the manufacture method of haze particle detection chip provided by the invention, can realize in ensureing less photosensitive region width and increase photosensitive area as far as possible dressing electrode system by silver, less photosensitive region width can reduce the response time of chip, and by noble metal nano lattice array amplifying optical signals, thereby the detection sensitivity of raising chip.
Finally it is to be noted: above embodiment only, in order to technical scheme of the present invention to be described, is not intended to limit.Although the present invention is had been described in detail with reference to previous embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record aforementioned each embodiment is modified, or part technical characterictic is wherein equal to replacement; These amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme, and should be encompassed in the middle of the technical scheme scope of request protection of the present invention.
Claims (7)
1. a haze particle detection chip, be applied to the airborne particulate article inspection device that comprises laser equipment, fog particle detection chip and display device, described laser equipment is for Emission Lasers, and described laser is by the surface of described fog particle detection chip; Described fog particle detection chip, for receiving the laser being scattered, produces electric signal transmission of electric signals to described display device; Described display device shows the result of detection of fog particle for the treatment of described telecommunications trumpeter; It is characterized in that,
Described fog particle detection chip comprises layer structure, from the bottom to the superiors, is followed successively by: substrate of glass, CdSe film, noble metal nano lattice array, silver-colored in dressing electrode system, aluminum oxide film and anti-reflection film, wherein,
The centre wavelength of described anti-reflection film is identical with described sharp light wavelength, for reducing the laser that the is scattered reflection strength when by described fog particle detection chip surperficial, to greatest extent by described laser;
Described aluminum oxide film is for passing through described laser, and air-isolation is avoided the damage of oxygen to internal layer membrane and nanometer lattice row;
Described silver to dressing electrode system comprise be parallel to each other but Uncrossed silver-colored dressing membrane electrode and silver-colored dressing film to electrode, the electric signal producing for collecting described CdSe film, by electric signal transmission to described display device;
Described noble metal nano lattice array is used for by surface plasma body resonant vibration effect, laser signal being amplified, and transmits the extremely described CdSe film of laser signal after amplifying;
Under the effect of described CdSe film for the laser signal after amplification, produce electric signal;
Described substrate of glass is used for carrying superstructure and described electric signal is insulated.
2. haze particle detection chip as claimed in claim 1, is characterized in that, the centre wavelength of described anti-reflection film is 605nm.
3. haze particle detection chip as claimed in claim 1, is characterized in that, described noble metal nano dot matrix is classified gold or silver nanoparticle lattice array as.
4. haze particle detection chip as claimed in claim 1, is characterized in that, the thickness of described CdSe film is 150-200 nanometer
5. a manufacture method for fog particle detection chip claimed in claim 1, is characterized in that, comprising:
Adopt Laser Molecular Beam Epitaxy in substrate of glass, to prepare CdSe film;
On the surface of described CdSe film, noble metal nano lattice array is set;
Adopt the mask vacuum method of steaming to prepare silver to comb electrode system on described noble metal nano lattice array surface;
Adopt technique for atomic layer deposition, at silver, aluminum oxide film is prepared in the surface of comb electrode system;
On described aluminum oxide film, prepare anti-reflection film.
6. method as claimed in claim 5, is characterized in that, described noble metal nano dot matrix is classified gold or silver nanoparticle lattice array as.
7. method as claimed in claim 5, is characterized in that, the thickness of described CdSe film is 150-200 nanometer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410167848.3A CN103940712B (en) | 2014-04-24 | 2014-04-24 | Haze particle detection chip and manufacture method thereof |
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| CN201410167848.3A CN103940712B (en) | 2014-04-24 | 2014-04-24 | Haze particle detection chip and manufacture method thereof |
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| CN103940712A true CN103940712A (en) | 2014-07-23 |
| CN103940712B CN103940712B (en) | 2016-02-03 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020001184A (en) * | 2000-06-27 | 2002-01-09 | 김성훈 | Micro-array UV-visible fluorescent spectro-photometer |
| CN101339128A (en) * | 2008-08-27 | 2009-01-07 | 中国科学院光电技术研究所 | Preparation method of surface plasma resonance imaging nano-structure array chip |
| CN101504360A (en) * | 2009-03-03 | 2009-08-12 | 中国科学院光电技术研究所 | Organic gas sensing method |
| US20100112716A1 (en) * | 2004-03-23 | 2010-05-06 | University Of New Orleans Research And Technology Foundation, Inc. | Synthesis of nanoassemblies containing luminescent quantum dots and magnetic nanoparticles |
-
2014
- 2014-04-24 CN CN201410167848.3A patent/CN103940712B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020001184A (en) * | 2000-06-27 | 2002-01-09 | 김성훈 | Micro-array UV-visible fluorescent spectro-photometer |
| US20100112716A1 (en) * | 2004-03-23 | 2010-05-06 | University Of New Orleans Research And Technology Foundation, Inc. | Synthesis of nanoassemblies containing luminescent quantum dots and magnetic nanoparticles |
| CN101339128A (en) * | 2008-08-27 | 2009-01-07 | 中国科学院光电技术研究所 | Preparation method of surface plasma resonance imaging nano-structure array chip |
| CN101504360A (en) * | 2009-03-03 | 2009-08-12 | 中国科学院光电技术研究所 | Organic gas sensing method |
Non-Patent Citations (1)
| Title |
|---|
| 张君梦等: "银纳米阵列直径对SERS增强效果的影响", 《光散射学报》 * |
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Effective date of registration: 20141224 Address after: 100048 Beijing West Third Ring Road, Haidian District, No. 105 Applicant after: Capital Normal Univ. Address before: 100048 Haidian District West Third Ring Road North, Capital Normal University, Department of physics,, Beijing Applicant before: Zhang Lisheng |
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