CN104993022A - Method for preparing quantum dot photodetection array device based on ink-jet printing technology - Google Patents
Method for preparing quantum dot photodetection array device based on ink-jet printing technology Download PDFInfo
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- CN104993022A CN104993022A CN201510492347.7A CN201510492347A CN104993022A CN 104993022 A CN104993022 A CN 104993022A CN 201510492347 A CN201510492347 A CN 201510492347A CN 104993022 A CN104993022 A CN 104993022A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000005516 engineering process Methods 0.000 title claims abstract description 25
- 238000007641 inkjet printing Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 238000007639 printing Methods 0.000 claims abstract description 57
- 238000012360 testing method Methods 0.000 claims abstract description 37
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims abstract description 16
- 230000005284 excitation Effects 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims description 135
- 239000004332 silver Substances 0.000 claims description 135
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 134
- 229910052802 copper Inorganic materials 0.000 claims description 117
- 239000010949 copper Substances 0.000 claims description 117
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 116
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 28
- 238000009832 plasma treatment Methods 0.000 claims description 21
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical group [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 19
- 239000011521 glass Substances 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 230000008595 infiltration Effects 0.000 claims description 7
- 238000001764 infiltration Methods 0.000 claims description 7
- 238000010926 purge Methods 0.000 claims description 7
- IJDNQMDRQITEOD-UHFFFAOYSA-N sec-butylidene Natural products CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 abstract description 6
- 238000012545 processing Methods 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000011031 large-scale manufacturing process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004506 ultrasonic cleaning Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The invention relates to a method for preparing a quantum dot photodetection array device based on ink-jet printing technology. The method is characterized by carrying out plasma and chloroform processing on a substrate; then, printing a metal electrode array and a quantum dot array on the substrate through an ink-jet printer with metal electrode ink and quantum dot ink respectively; and finally, carrying out current and voltage test in the dark and any monochromatic light source environment. The method for preparing the quantum dot photodetection array device based on the ink-jet printing technology is simple in preparation technology, and can carry out large-scale production; and the photodetection device adopts quantum dots, so that the photodetection device has a better photosensitive characteristic for any excitation light source.
Description
Technical field
The present invention relates to a kind of method preparing quantum dot photo detector array device based on inkjet technology.
Background technology
Quantum dot due to size little, specific surface is large, and quantum size effect is remarkable, and this makes the physical characteristics such as the light of nanometer system, heat, electricity different from the material of routine, occurs the characteristic of many novelties.A large amount of experiments shows, quantum dot has different response characteristics for any excitation wavelength being less than wavelength of fluorescence.According to this characteristic, also relevant quantum dot light detection study is there is in prior art, but research is at present prepared photo-detector and be there is preparation process complexity, and waste material, then there is the advantage not available for other technologies in inkjet technology, as long as can want that the place printed prints completely as adopted ink-jet, the phenomenon of waste of material can not be there is, and owing to being the form printing array, later stage can carry out suitable cutting to light-detecting device according to demand, and this can be described as the advantage that the device that only has inkjet printing to prepare possesses.In addition, this technique of printing of inkjet printer quantum dot light detector is adopted to there is operating process simple, can print electrode and quantum dot in any printable plane, can be applied to the series of advantages such as industrial production, this has important application to the large-scale application of the photo-detector in future.
Summary of the invention
The object of the present invention is to provide a kind of method preparing quantum dot photo detector array device based on inkjet technology, to overcome the defect existed in prior art.
For achieving the above object, technical scheme of the present invention is: a kind of method preparing quantum dot photo detector array device based on inkjet technology, it is characterized in that, adopt inkjet printing methods on substrate, to print silver electrode array, copper electrode array and quantum dot array respectively to prepare light-detecting device, and photoelectric properties test is carried out to described light-detecting device.
In an embodiment of the present invention, described inkjet printing methods realizes in accordance with the following steps:
Step S1: clean the substrate for printing, removes the surface impurity of described substrate; Carry out plasma treatment, to improve the infiltration of marking ink to described substrate; And after plasma treatment, with substrate described in purging with nitrogen gas;
Step S2: adopt the shower nozzle of 80 microns to print the silver electrode array of 100 × 10 over the substrate, wherein, the x-axis dot spacing of described silver electrode array is 600 microns, y-axis dot spacing 100 microns, described silver electrode thickness is 40 nanometer to 50 nanometers, and the print span of described silver electrode is 160 microns to 200 microns;
Step S3: adopt the shower nozzle of 80 microns to print the quantum dot array of 10 × 100 in described silver electrode array, and this quantum dot array correspondence is horizontally placed in described silver electrode array, wherein, the y-axis dot spacing of described quantum dot array is 900 microns, x-axis dot spacing 100 microns, described quantum dot array thickness is 30 nanometer to 40 nanometers;
Step S4: adopt the shower nozzle of 80 microns corresponding copper electrode array printing 100x10 between silver electrode in described silver electrode array, the copper electrode namely in described silver electrode and described copper electrode array is staggered; Wherein, the x-axis dot spacing of described copper electrode array is 600 microns, y-axis dot spacing 100 microns, the thickness of described copper electrode array is 40 nanometer to 50 nanometers, the print span of described copper electrode is 160 microns to 200 microns, and adjacent described silver electrode and the spacing of described copper electrode are 100 microns to 140 microns.
In an embodiment of the present invention, in described step S1, plasma treatment is carried out to described substrate, and adopt chloroform to soak, in order to improve described substrate surface for roughness; Described substrate is common PET or simple glass.
In an embodiment of the present invention, in described step S2, by the silver electrode marking ink being used for printing described silver electrode array is mixed in 1:1 ratio with n-butanol, in order to regulate viscosity and the tension force of silver electrode marking ink.
In an embodiment of the present invention, in described step S3, by the quantum dot marking ink being used for printing quantum dot array is mixed in 1:1 ratio with normal butane, in order to viscosity and the tension force of quantum dot printing ink; Described quantum dot marking ink is CdSe or PbS, and the concentration of described quantum dot marking ink is 5mg/ml.
In an embodiment of the present invention, in described step S4, by the copper electrode marking ink being used for printing copper electrode array is mixed in 1:1 ratio with n-butanol, in order to regulate viscosity and the tension force of copper electrode marking ink.
In an embodiment of the present invention, carrying out in photoelectric properties test process to described light-detecting device, the voltage of 0.5V to 3V is added between described silver electrode array and described copper electrode array, and under described light-detecting device is positioned over monochromatic source respectively, by changing the excitation wavelength of described monochromatic source, voltage-to-current survey is carried out to described light-detecting device, and under obtaining constant voltage electric current about the relation of emission wavelength.
In an embodiment of the present invention, carry out in photoelectric properties test process to described light-detecting device, positive voltage is added in described silver electrode array, negative voltage is added at described copper electrode array, by adopting the excitation wavelength of 200 nanometer to 1600 nanometers to irradiate described light-detecting device, and semi-conductor test instrument is utilized to carry out voltage-to-current test.
In an embodiment of the present invention, carrying out in photoelectric properties test process to described light-detecting device, the voltage of 0.5V to 3V is added between described silver electrode array and described copper electrode array, and under described light-detecting device is positioned over dark condition, voltage-to-current survey is carried out to described light-detecting device, and under obtaining constant voltage electric current about the relation of emission wavelength.
In an embodiment of the present invention, carry out in photoelectric properties test process to described light-detecting device, add positive voltage in described silver electrode permutation, add negative voltage at described copper electrode array, described light-detecting device is placed in darkroom, utilizes semi-conductor test instrument to carry out voltage-to-current test.
Compared to prior art; the present invention has following beneficial effect: a kind of method preparing quantum dot photo detector array device based on inkjet technology proposed by the invention; controllability is strong; be produced on a large scale, universality is good, and technological operation is simple and convenient; be commercial product preparing the reagent adopted in photo-detector process; without the need to loaded down with trivial details preparation, and prepared photo-detector is after the test of follow-up photoelectric properties, has good restorability.
Accompanying drawing explanation
Fig. 1 is through preparing the flow chart of the method for quantum dot photo detector array device based on inkjet technology in one embodiment of the invention.
Fig. 2 is the overall structure schematic diagram of substrate in one embodiment of the invention.
Fig. 3 is the vertical view of substrate in one embodiment of the invention.
Fig. 4 is the end view of substrate in one embodiment of the invention.
Fig. 5 is the overall structure schematic diagram after substrate printing in one embodiment of the invention silver electrode.
Fig. 6 is the vertical view after substrate printing in one embodiment of the invention silver electrode.
Fig. 7 is the end view after substrate printing in one embodiment of the invention silver electrode.
Fig. 8 is the overall structure schematic diagram after substrate printing in one embodiment of the invention silver electrode/quantum dot.
Fig. 9 is the vertical view after substrate printing in one embodiment of the invention silver electrode/quantum dot.
Figure 10 is the end view after substrate printing in one embodiment of the invention silver electrode/quantum dot.
Figure 11 is the overall structure schematic diagram after substrate printing in one embodiment of the invention silver electrode/quantum dot/copper electrode.
Figure 12 is the vertical view after substrate printing in one embodiment of the invention silver electrode/quantum dot/copper electrode.
Figure 13 is the end view after substrate printing in one embodiment of the invention silver electrode/quantum dot/copper electrode
[label declaration]: 1-substrate; 2-silver electrode; 3-quantum dot; 4-copper electrode.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is specifically described.
The invention provides a kind of method preparing quantum dot photo detector array device based on inkjet technology, adopt inkjet printing methods on substrate, to print silver electrode array, copper electrode array and quantum dot array respectively to prepare light-detecting device, and photoelectric properties test is carried out to described light-detecting device.
Further, in the present embodiment, as shown in Figure 1, described inkjet printing methods realizes in accordance with the following steps, and Figure 11 is the overall structure schematic diagram of prepared light-detecting device:
Step S1: to substrate processing: clean the substrate for printing, removes the surface impurity of described substrate; Carry out plasma treatment, to improve the infiltration of marking ink to described substrate; And after plasma treatment, with substrate described in purging with nitrogen gas; In the present embodiment, plasma treatment is carried out to described substrate, and adopt chloroform to soak, in order to improve described substrate surface for roughness; Described substrate is common PET or simple glass, as shown in Fig. 2 ~ Fig. 4, is respectively the overall structure schematic diagram of substrate 1 or substrate, vertical view and end view.
Step S2: the preparation of silver electrode array: adopt the shower nozzle of 80 microns to print the silver electrode array of 100 × 10 over the substrate, wherein, the x-axis dot spacing of described silver electrode array is 600 microns, y-axis dot spacing 100 microns, described silver electrode thickness is 43 nanometers, and the print span of described silver electrode is 180 microns; In the present embodiment, by the silver electrode marking ink being used for printing described silver electrode array is mixed in 1:1 ratio with n-butanol, in order to regulate viscosity and the tension force of silver electrode marking ink; As shown in Fig. 5 ~ 7, for substrate 1 printing overall structure schematic diagram, vertical view and end view after silver electrode 2.
Step S3: the preparation of quantum dot array: adopt the shower nozzle of 80 microns to print the quantum dot array of 10 × 100 in described silver electrode array, and this quantum dot array correspondence is horizontally placed in described silver electrode array, wherein, the y-axis dot spacing of described quantum dot array is 900 microns, x-axis dot spacing 100 microns, described quantum dot array thickness is 30 nanometer to 40 nanometers; In the present embodiment, by the quantum dot marking ink being used for printing quantum dot array is mixed in 1:1 ratio with normal butane, in order to viscosity and the tension force of quantum dot printing ink; Described quantum dot marking ink is CdSe or PbS, and the concentration of described quantum dot marking ink is 5mg/ml; As shown in Fig. 8 ~ 10, for substrate 1 printing overall structure schematic diagram, vertical view and the end view after silver electrode 2/ quantum dot 3.
Step S4: the preparation of the copper electrode of device electrode: adopt the shower nozzle of 80 microns corresponding copper electrode array printing 100x10 between silver electrode in described silver electrode array, the copper electrode namely in described silver electrode and described copper electrode array is staggered; Wherein, the x-axis dot spacing of described copper electrode array is 600 microns, y-axis dot spacing 100 microns, the thickness of described copper electrode array is 40 nanometer to 50 nanometers, the print span of described copper electrode is 160 microns to 200 microns, and adjacent described silver electrode and the spacing of described copper electrode are 100 microns to 140 microns; By the copper electrode marking ink being used for printing copper electrode array is mixed in 1:1 ratio with n-butanol, in order to regulate viscosity and the tension force of copper electrode marking ink; As shown in Figure 11 ~ 13, for substrate 1 printing overall structure schematic diagram, vertical view and the end view after silver electrode 2/ quantum dot 3/ copper electrode 4.
Further, in the present embodiment, can cut the made light-detecting device got ready according to the actual requirements.
Further, in the present embodiment, carrying out in photoelectric properties test process to described light-detecting device, the voltage of 0.5V to 3V is added between described silver electrode array and described copper electrode array, and under described light-detecting device is positioned over monochromatic source respectively, by changing the emission wavelength of described monochromatic source, voltage-to-current survey is carried out to described light-detecting device, and under obtaining constant voltage electric current about the relation of emission wavelength.Preferably, carry out in photoelectric properties test process to described light-detecting device, positive voltage is added in described silver electrode array, negative voltage is added at described copper electrode array, by adopting the excitation wavelength of 200 nanometer to 1600 nanometers to irradiate described light-detecting device, and semi-conductor test instrument is utilized to carry out voltage-to-current test.
Further, in another embodiment, carrying out in photoelectric properties test process to described light-detecting device, the voltage of 0.5V to 3V is added between described silver electrode array and described copper electrode array, and under described light-detecting device is positioned over dark condition, voltage-to-current survey is carried out to described light-detecting device, and under obtaining constant voltage electric current about the relation of emission wavelength.Preferably, carry out in photoelectric properties test process to described light-detecting device, add positive voltage in described silver electrode permutation, add negative voltage at described copper electrode array, device is placed in darkroom, utilize semi-conductor test instrument to carry out current/voltage test.
In order to allow those skilled in the art understand a kind of method preparing quantum dot photo detector array device based on inkjet technology proposed by the invention further, be described below in conjunction with specific embodiment and accompanying drawing 1 ~ Figure 13.
embodiment 1
Step S1: acetone, ethanol and deionized water ultrasonic cleaning 15min being used respectively to the common PET substrate for printing, removing the surface impurity of described common PET substrate; Carry out plasma treatment 10min, to improve the infiltration of marking ink to described common PET substrate; And after plasma treatment, with common PET substrate described in purging with nitrogen gas; In the present embodiment, plasma treatment is carried out to described common PET substrate, and adopts chloroform to soak, in order to improve described common PET substrate surface for roughness.
Step S2: adopt ink-jet printer jetlab2 on described common PET substrate by the silver electrode array shower nozzle of 80 microns printing 100 × 10, after printing under 80 degree celsius temperature heat treatment silver electrode, wherein, the x-axis dot spacing of described silver electrode array is 600 microns, y-axis dot spacing 100 microns, described silver electrode thickness is 50 nanometers, and the print span of described silver electrode is 160 microns; In the present embodiment, by the silver electrode marking ink being used for printing described silver electrode array is mixed in 1:1 ratio with n-butanol, in order to regulate viscosity and the tension force of silver electrode marking ink.In other embodiments, silver electrode thickness is desirable 43 nanometers also, 45 nanometers, 47 nanometers etc., the print span of silver electrode also desirable 160 microns, 180 microns, 200 microns etc.
Step S3: adopt the shower nozzle of 80 microns to print the CdSe quantum dot quantum dot array of 10 × 100 in described silver electrode array, and this CdSe quantum dot quantum dot array correspondence is horizontally placed in described silver electrode array, wherein, the y-axis dot spacing of described CdSe quantum dot quantum dot array is 900 microns, x-axis dot spacing 100 microns, described CdSe quantum dot quantum dot array thickness is 40 nanometers; In the present embodiment, by CdSe quantum dot marking ink is mixed in 1:1 ratio with normal butane, in order to regulate viscosity and the tension force of CdSe quantum dot marking ink; The concentration of described CdSe quantum dot marking ink is 5mg/ml.In other embodiments, CdSe quantum dot quantum dot array thickness is desirable 32 nanometers also, 35 nanometers, 37 nanometers etc.
Step S4: adopt the shower nozzle of 80 microns corresponding copper electrode array printing 100x10 between silver electrode in described silver electrode array, the copper electrode namely in described silver electrode and described copper electrode array is staggered; Wherein, the x-axis dot spacing of described copper electrode array is 600 microns, y-axis dot spacing 100 microns, and the thickness of described copper electrode array is 50 nanometers, the print span of described copper electrode is 160 microns, and adjacent described silver electrode and the spacing of described copper electrode are 140 microns; By the copper electrode marking ink being used for printing copper electrode array is mixed in 1:1 ratio with n-butanol, in order to regulate viscosity and the tension force of copper electrode marking ink.In other embodiments, thickness also desirable 43 nanometers of copper electrode array, 45 nanometers, 47 nanometers etc., the print span of copper electrode also desirable 180 microns, 190 microns, 200 microns etc., adjacent described silver electrode and the spacing of described copper electrode 120 microns, 110 microns, 100 microns etc.
Finally prepared photo-detector is dried and test, namely at copper electrode and silver electrode two ends making alive, under light-detecting device being placed on the monochromatic source of dark and different excitation wavelength, carry out I-V test.
embodiment 2
Step S1: acetone, ethanol and deionized water ultrasonic cleaning 15 min being used respectively to the common PET substrate for printing, removing the surface impurity of described common PET substrate; Carry out plasma treatment 10min, to improve the infiltration of marking ink to described common PET substrate; And after plasma treatment, with common PET substrate described in purging with nitrogen gas; In the present embodiment, plasma treatment is carried out to described common PET substrate, and adopts chloroform to soak, in order to improve described common PET substrate surface for roughness.
Step S2: adopt ink-jet printer jetlab2 on described common PET substrate by the silver electrode array shower nozzle of 80 microns printing 100 × 10, after printing under 80 degree celsius temperature heat treatment silver electrode, wherein, the x-axis dot spacing of described silver electrode array is 600 microns, y-axis dot spacing 100 microns, described silver electrode thickness is 50 nanometers, and the print span of described silver electrode is 160 microns; In the present embodiment, by the silver electrode marking ink being used for printing described silver electrode array is mixed in 1:1 ratio with n-butanol, in order to regulate viscosity and the tension force of silver electrode marking ink.In other embodiments, silver electrode thickness is desirable 43 nanometers also, 45 nanometers, 47 nanometers etc., the print span of silver electrode also desirable 160 microns, 180 microns, 200 microns etc.
Step S3: adopt the shower nozzle of 80 microns to print the PbS quantum quantum dot array of 10 × 100 in described silver electrode array, and this PbS quantum quantum dot array correspondence is horizontally placed in described silver electrode array, wherein, the y-axis dot spacing of described PbS quantum quantum dot array is 900 microns, x-axis dot spacing 100 microns, described PbS quantum quantum dot array thickness is 40 nanometers; In the present embodiment, by PbS quantum marking ink is mixed in 1:1 ratio with normal butane, in order to regulate viscosity and the tension force of PbS quantum marking ink; The concentration of described PbS quantum marking ink is 5mg/ml.In other embodiments, PbS quantum quantum dot array thickness is desirable 32 nanometers also, 35 nanometers, 37 nanometers etc.
Step S4: adopt the shower nozzle of 80 microns corresponding copper electrode array printing 100x10 between silver electrode in described silver electrode array, the copper electrode namely in described silver electrode and described copper electrode array is staggered; Wherein, the x-axis dot spacing of described copper electrode array is 600 microns, y-axis dot spacing 100 microns, and the thickness of described copper electrode array is 50 nanometers, the print span of described copper electrode is 160 microns, and adjacent described silver electrode and the spacing of described copper electrode are 140 microns; By the copper electrode marking ink being used for printing copper electrode array is mixed in 1:1 ratio with n-butanol, in order to regulate viscosity and the tension force of copper electrode marking ink.In other embodiments, thickness also desirable 43 nanometers of copper electrode array, 45 nanometers, 47 nanometers etc., the print span of copper electrode also desirable 180 microns, 190 microns, 200 microns etc., adjacent described silver electrode and the spacing of described copper electrode 120 microns, 110 microns, 100 microns etc.
Finally prepared photo-detector is dried and test, namely at copper electrode and silver electrode two ends making alive, under light-detecting device being placed on the monochromatic source of dark and different excitation wavelength, carry out I-V test.
embodiment 3
Step S1: acetone, ethanol and deionized water ultrasonic cleaning 15 min being used respectively to the common glass substrate for printing, removing the surface impurity of described common glass substrate; Carry out plasma treatment 10min, to improve the infiltration of marking ink to described common glass substrate; And after plasma treatment, with common glass substrate described in purging with nitrogen gas; In the present embodiment, plasma treatment is carried out to described common glass substrate, and adopt chloroform to soak, in order to improve described common glass substrate surface roughness.
Step S2: adopt ink-jet printer jetlab2 on described common glass substrate by the silver electrode array shower nozzle of 80 microns printing 100 × 10, after printing under 80 degree celsius temperature heat treatment silver electrode, wherein, the x-axis dot spacing of described silver electrode array is 600 microns, y-axis dot spacing 100 microns, described silver electrode thickness is 50 nanometers, and the print span of described silver electrode is 160 microns; In the present embodiment, by the silver electrode marking ink being used for printing described silver electrode array is mixed in 1:1 ratio with n-butanol, in order to regulate viscosity and the tension force of silver electrode marking ink.In other embodiments, silver electrode thickness is desirable 43 nanometers also, 45 nanometers, 47 nanometers etc., the print span of silver electrode also desirable 160 microns, 180 microns, 200 microns etc.
Step S3: adopt the shower nozzle of 80 microns to print the CdSe quantum dot quantum dot array of 10 × 100 in described silver electrode array, and this CdSe quantum dot quantum dot array correspondence is horizontally placed in described silver electrode array, wherein, the y-axis dot spacing of described CdSe quantum dot quantum dot array is 900 microns, x-axis dot spacing 100 microns, described CdSe quantum dot quantum dot array thickness is 40 nanometers; In the present embodiment, by CdSe quantum dot marking ink is mixed in 1:1 ratio with normal butane, in order to regulate viscosity and the tension force of CdSe quantum dot marking ink; The concentration of described CdSe quantum dot marking ink is 5mg/ml.In other embodiments, CdSe quantum dot quantum dot array thickness is desirable 32 nanometers also, 35 nanometers, 37 nanometers etc.
Step S4: adopt the shower nozzle of 80 microns corresponding copper electrode array printing 100x10 between silver electrode in described silver electrode array, the copper electrode namely in described silver electrode and described copper electrode array is staggered; Wherein, the x-axis dot spacing of described copper electrode array is 600 microns, y-axis dot spacing 100 microns, and the thickness of described copper electrode array is 50 nanometers, the print span of described copper electrode is 160 microns, and adjacent described silver electrode and the spacing of described copper electrode are 140 microns; By the copper electrode marking ink being used for printing copper electrode array is mixed in 1:1 ratio with n-butanol, in order to regulate viscosity and the tension force of copper electrode marking ink.In other embodiments, thickness also desirable 43 nanometers of copper electrode array, 45 nanometers, 47 nanometers etc., the print span of copper electrode also desirable 180 microns, 190 microns, 200 microns etc., adjacent described silver electrode and the spacing of described copper electrode 120 microns, 110 microns, 100 microns etc.
Finally prepared photo-detector is dried and test, namely at copper electrode and silver electrode two ends making alive, under light-detecting device being placed on the monochromatic source of dark and different excitation wavelength, carry out I-V test.
embodiment 4
Step S1: acetone, ethanol and deionized water ultrasonic cleaning 15 min being used respectively to the common glass substrate for printing, removing the surface impurity of described common glass substrate; Carry out plasma treatment 10min, to improve the infiltration of marking ink to described common glass substrate; And after plasma treatment, with common glass substrate described in purging with nitrogen gas; In the present embodiment, plasma treatment is carried out to described common glass substrate, and adopt chloroform to soak, in order to improve described common glass substrate surface roughness.
Step S2: adopt ink-jet printer jetlab2 on described common glass substrate by the silver electrode array shower nozzle of 80 microns printing 100 × 10, after printing under 80 degree celsius temperature heat treatment silver electrode, wherein, the x-axis dot spacing of described silver electrode array is 600 microns, y-axis dot spacing 100 microns, wherein, the x-axis dot spacing of described copper electrode array is 600 microns, y-axis dot spacing 100 microns, the thickness of described copper electrode array is 50 nanometers, the print span of described copper electrode is 160 microns, adjacent described silver electrode and the spacing of described copper electrode are 140 microns, by the copper electrode marking ink being used for printing copper electrode array is mixed in 1:1 ratio with n-butanol, in order to regulate viscosity and the tension force of copper electrode marking ink.In other embodiments, thickness also desirable 43 nanometers of copper electrode array, 45 nanometers, 47 nanometers etc., the print span of copper electrode also desirable 180 microns, 190 microns, 200 microns etc., adjacent described silver electrode and the spacing of described copper electrode 120 microns, 110 microns, 100 microns etc.
Step S3: adopt the shower nozzle of 80 microns to print the PbS quantum quantum dot array of 10 × 100 in described silver electrode array, and this PbS quantum quantum dot array correspondence is horizontally placed in described silver electrode array, wherein, the y-axis dot spacing of described PbS quantum quantum dot array is 900 microns, x-axis dot spacing 100 microns, described PbS quantum quantum dot array thickness is 40 nanometers; In the present embodiment, by PbS quantum marking ink is mixed in 1:1 ratio with normal butane, in order to regulate viscosity and the tension force of PbS quantum marking ink; The concentration of described PbS quantum marking ink is 5mg/ml.In other embodiments, PbS quantum quantum dot array thickness is desirable 32 nanometers also, 35 nanometers, 37 nanometers etc.
Step S4: adopt the shower nozzle of 80 microns corresponding copper electrode array printing 100x10 between silver electrode in described silver electrode array, the copper electrode namely in described silver electrode and described copper electrode array is staggered; Wherein, the x-axis dot spacing of described copper electrode array is 600 microns, y-axis dot spacing 100 microns, and the thickness of described copper electrode array is 50 nanometers, the print span of described copper electrode is 160 microns, and adjacent described silver electrode and the spacing of described copper electrode are 140 microns; By the copper electrode marking ink being used for printing copper electrode array is mixed in 1:1 ratio with n-butanol, in order to regulate viscosity and the tension force of copper electrode marking ink.In other embodiments, thickness also desirable 43 nanometers of copper electrode array, 45 nanometers, 47 nanometers etc., the print span of copper electrode also desirable 180 microns, 190 microns, 200 microns etc., adjacent described silver electrode and the spacing of described copper electrode 120 microns, 110 microns, 100 microns etc.
Finally prepared photo-detector is dried and test, namely at copper electrode and silver electrode two ends making alive, under light-detecting device being placed on the monochromatic source of dark and different excitation wavelength, carry out I-V test.
Be more than preferred embodiment of the present invention, all changes done according to technical solution of the present invention, when the function produced does not exceed the scope of technical solution of the present invention, all belong to protection scope of the present invention.
Claims (10)
1. prepare the method for quantum dot photo detector array device based on inkjet technology for one kind, it is characterized in that, adopt inkjet printing methods on substrate, to print silver electrode array, copper electrode array and quantum dot array respectively to prepare light-detecting device, and photoelectric properties test is carried out to described light-detecting device.
2. a kind of method preparing quantum dot photo detector array device based on inkjet technology according to claim 1, it is characterized in that, described inkjet printing methods realizes in accordance with the following steps:
Step S1: clean the substrate for printing, removes the surface impurity of described substrate; Carry out plasma treatment, to improve the infiltration of marking ink to described substrate; And after plasma treatment, with substrate described in purging with nitrogen gas;
Step S2: adopt the shower nozzle of 80 microns to print the silver electrode array of 100 × 10 over the substrate, wherein, the x-axis dot spacing of described silver electrode array is 600 microns, y-axis dot spacing 100 microns, described silver electrode thickness is 40 nanometer to 50 nanometers, and the print span of described silver electrode is 160 microns to 200 microns;
Step S3: adopt the shower nozzle of 80 microns to print the quantum dot array of 10 × 100 in described silver electrode array, and this quantum dot array correspondence is horizontally placed in described silver electrode array, wherein, the y-axis dot spacing of described quantum dot array is 900 microns, x-axis dot spacing 100 microns, described quantum dot array thickness is 30 nanometer to 40 nanometers;
Step S4: adopt the shower nozzle of 80 microns corresponding copper electrode array printing 100x10 between silver electrode in described silver electrode array, the copper electrode namely in described silver electrode and described copper electrode array is staggered; Wherein, the x-axis dot spacing of described copper electrode array is 600 microns, y-axis dot spacing 100 microns, the thickness of described copper electrode array is 40 nanometer to 50 nanometers, the print span of described copper electrode is 160 microns to 200 microns, and adjacent described silver electrode and the spacing of described copper electrode are 100 microns to 140 microns.
3. a kind of method preparing quantum dot photo detector array device based on inkjet technology according to claim 2, it is characterized in that, in described step S1, plasma treatment is carried out to described substrate, and adopt chloroform to soak, in order to improve described substrate surface for roughness; Described substrate is common PET or simple glass.
4. a kind of method preparing quantum dot photo detector array device based on inkjet technology according to claim 2, it is characterized in that, in described step S2, by the silver electrode marking ink being used for printing described silver electrode array is mixed in 1:1 ratio with n-butanol, in order to regulate viscosity and the tension force of silver electrode marking ink.
5. a kind of method preparing quantum dot photo detector array device based on inkjet technology according to claim 2, it is characterized in that, in described step S3, by the quantum dot marking ink being used for printing quantum dot array is mixed in 1:1 ratio with normal butane, in order to viscosity and the tension force of quantum dot printing ink; Described quantum dot marking ink is CdSe or PbS, and the concentration of described quantum dot marking ink is 5mg/ml.
6. a kind of method preparing quantum dot photo detector array device based on inkjet technology according to claim 3, it is characterized in that, in described step S4, by the copper electrode marking ink being used for printing copper electrode array is mixed in 1:1 ratio with n-butanol, in order to regulate viscosity and the tension force of copper electrode marking ink.
7. a kind of method preparing quantum dot photo detector array device based on inkjet technology according to claim 1, it is characterized in that, carrying out in photoelectric properties test process to described light-detecting device, the voltage of 0.5V to 3V is added between described silver electrode array and described copper electrode array, and under described light-detecting device is positioned over monochromatic source respectively, by changing the excitation wavelength of described monochromatic source, voltage-to-current survey is carried out to described light-detecting device, and under obtaining constant voltage electric current about the relation of emission wavelength.
8. a kind of method preparing quantum dot photo detector array device based on inkjet technology according to claim 7, it is characterized in that, carry out in photoelectric properties test process to described light-detecting device, positive voltage is added in described silver electrode array, negative voltage is added at described copper electrode array, by adopting the excitation wavelength of 200 nanometer to 1600 nanometers to irradiate described light-detecting device, and semi-conductor test instrument is utilized to carry out voltage-to-current test.
9. a kind of method preparing quantum dot photo detector array device based on inkjet technology according to claim 1, it is characterized in that, carrying out in photoelectric properties test process to described light-detecting device, the voltage of 0.5V to 3V is added between described silver electrode array and described copper electrode array, and under described light-detecting device is positioned over dark condition, voltage-to-current survey is carried out to described light-detecting device, and under obtaining constant voltage electric current about the relation of emission wavelength.
10. a kind of method preparing quantum dot photo detector array device based on inkjet technology according to claim 9, it is characterized in that, carry out in photoelectric properties test process to described light-detecting device, positive voltage is added in described silver electrode permutation, negative voltage is added at described copper electrode array, described light-detecting device is placed in darkroom, utilizes semi-conductor test instrument to carry out voltage-to-current test.
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