CN104993022B - A kind of method that quantum dot photo detector array device is prepared based on inkjet technology - Google Patents
A kind of method that quantum dot photo detector array device is prepared based on inkjet technology Download PDFInfo
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- CN104993022B CN104993022B CN201510492347.7A CN201510492347A CN104993022B CN 104993022 B CN104993022 B CN 104993022B CN 201510492347 A CN201510492347 A CN 201510492347A CN 104993022 B CN104993022 B CN 104993022B
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000005516 engineering process Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 238000012360 testing method Methods 0.000 claims abstract description 33
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000005284 excitation Effects 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims description 135
- 239000004332 silver Substances 0.000 claims description 135
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 134
- 229910052802 copper Inorganic materials 0.000 claims description 117
- 239000010949 copper Substances 0.000 claims description 117
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 116
- 238000007639 printing Methods 0.000 claims description 52
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 26
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical group [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 19
- 239000011521 glass Substances 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000009832 plasma treatment Methods 0.000 claims description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 7
- 230000008595 infiltration Effects 0.000 claims description 7
- 238000001764 infiltration Methods 0.000 claims description 7
- 238000007641 inkjet printing Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000010926 purge Methods 0.000 claims description 7
- IJDNQMDRQITEOD-UHFFFAOYSA-N sec-butylidene Natural products CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000011896 sensitive detection Methods 0.000 description 4
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000010009 beating Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The present invention relates to a kind of method for preparing quantum dot photo detector array device based on inkjet technology, plasma is carried out to substrate and chloroform is processed, then metal electrode array and quantum dot array is printed on substrate with metal electrode ink and quantum dot ink respectively with ink-jet printer, finally carry out Current Voltage test in the environment of dark and any monochromatic source.A kind of method that quantum dot photo detector array device is prepared based on inkjet technology proposed by the invention, preparation process is simple, can be produced on a large scale, and as the light-detecting device employs quantum dot, therefore the light-detecting device has preferable light sensitive characteristic to any excitation source.
Description
Technical field
The present invention relates to a kind of method for preparing quantum dot photo detector array device based on inkjet technology.
Background technology
Quantum dot is little due to size, and specific surface is big, and quantum size effect is notable, light that this causes nanometer system, heat, electricity etc.
Physical characteristic is different from conventional material, many novel characteristics occurs.Substantial amounts of experiment shows that quantum dot is for any little
There are different response characteristics in the excitation wavelength of wavelength of fluorescence.According to this characteristic, the amount of correlation in prior art, is there is also
Son point optical detection research, but at present research prepares photo-detector, and to there is preparation process complicated, and waste of materials, and inkjet printing
Then there is the advantage not available for other technologies in technology, as long as carried out beating where wanting to print using ink-jet completely
Print, is not in the phenomenon of waste of material, and due to being the form for printing array, the later stage can be according to demand to photo-detector
Part carries out suitable cutting, and this can be described as the advantage that the device that only prepared by inkjet printing possesses.Additionally, being beaten using ink-jet
Print machine prints quantum dot this technique of photo-detector, and to there is operating process simple, can any can print plane print electrode with
Quantum dot, can apply to the series of advantages such as industrial production, and this large-scale application to following photo-detector has important
Application.
Content of the invention
It is an object of the invention to provide a kind of side for preparing quantum dot photo detector array device based on inkjet technology
Method, to overcome defect present in prior art.
For achieving the above object, the technical scheme is that：One kind prepares quantum dot light spy based on inkjet technology
The method for surveying array device, it is characterised in that print silver electrode array, copper electrode on substrate respectively using inkjet printing methods
Array and quantum dot array are to prepare light-detecting device, and carry out photoelectric properties test to the light-detecting device.
In an embodiment of the present invention, the inkjet printing methods are realized in accordance with the following steps：
Step S1：Substrate for printing is carried out, removes the surface impurity of the substrate；Carry out at plasma
Reason, to improve infiltration of the marking ink to the substrate；And plasma treated after, purge the substrate with nitrogen；
Step S2：100 × 10 silver electrode array is printed using 80 microns of shower nozzles over the substrate, wherein, described
The x-axis dot spacing of silver electrode array is 600 microns, and 100 microns of y-axis dot spacing, the silver electrode thickness are received to 50 for 40 nanometers
Rice, the print span of the silver electrode is 160 microns to 200 microns；
Step S3：10 × 100 quantum dot array is printed using 80 microns of shower nozzles in the silver electrode array, and should
Quantum dot array is corresponded to and is horizontally placed in the silver electrode array, wherein, and the y-axis dot spacing of the quantum dot array is 900 microns,
100 microns of x-axis dot spacing, the quantum dot array thickness are 30 nanometers to 40 nanometers；
Step S4：Using 80 microns of shower nozzles in corresponding printing 100 × 10 between silver electrode in the silver electrode array
Copper electrode array, i.e., described silver electrode are staggered with the copper electrode in the copper electrode array；Wherein, the copper electrode array
X-axis dot spacing be 600 microns, 100 microns of y-axis dot spacing, the thickness of the copper electrode array are 40 nanometers to 50 nanometers, institute
The print span for stating copper electrode is 160 microns to 200 microns, and between the adjacent silver electrode and the copper electrode, distance is
100 microns to 140 microns.
In an embodiment of the present invention, in step S1, plasma treatment is carried out to the substrate, and adopts trichlorine
Methane is soaked, in order to improve the substrate surface for roughness；The substrate is common PET or simple glass.
In an embodiment of the present invention, in step S2, by being used for printing the silver electricity of the silver electrode array
Pole marking ink presses 1 with n-butanol：1 ratio is mixed, in order to adjust viscosity and the tension force of silver electrode marking ink.
In an embodiment of the present invention, in step S3, by will beat for the quantum dot for printing quantum dot array
Printing ink presses 1 with normal butane：1 ratio is mixed, the viscosity in order to quantum point marking ink and tension force；The quantum
Point marking ink is CdSe or PbS, and the concentration of the quantum dot marking ink is 5mg/ml.
In an embodiment of the present invention, in step S4, by will beat for the copper electrode for printing copper electrode array
Printing ink presses 1 with n-butanol：1 ratio is mixed, in order to adjust viscosity and the tension force of copper electrode marking ink.
In an embodiment of the present invention, the light-detecting device is being carried out in photoelectric properties test process, in the silver
Add the voltage of 0.5V to 3V between electrod-array and the copper electrode array, and the light-detecting device is respectively placed in monochrome
Under light source, by changing the excitation wavelength of the monochromatic source, voltage-to-current survey is carried out to the light-detecting device, and is obtained
Under constant voltage, electric current is with regard to the relation of emission wavelength.
In an embodiment of the present invention, the light-detecting device is carried out in photoelectric properties test process, in the silver electricity
Pole array adds positive voltage, adds negative voltage in the copper electrode array, is shone by the excitation wavelength using 200 nanometers to 1600 nanometers
The light-detecting device is penetrated, and voltage-to-current test is carried out using semi-conductor test instrument.
In an embodiment of the present invention, the light-detecting device is being carried out in photoelectric properties test process, in the silver
Add the voltage of 0.5V to 3V between electrod-array and the copper electrode array, and the light-detecting device is positioned over dark condition
Under, carry out voltage-to-current survey to the light-detecting device, and electric current is obtained under constant voltage with regard to the relation of emission wavelength.
In an embodiment of the present invention, the light-detecting device is carried out in photoelectric properties test process, in the silver electricity
Pole permutation adds positive voltage, adds negative voltage in the copper electrode array, the light-detecting device is placed in darkroom, using partly leading
Body tester carries out voltage-to-current test.
Compared to prior art, the invention has the advantages that：One kind proposed by the invention is based on inkjet printing
The method that technology prepares quantum dot photo detector array device, controllability are strong, are produced on a large scale, and universality is good, technological operation letter
Folk prescription just, is commercial product the reagent employed in photo-detector process is prepared, and without the need for loaded down with trivial details preparation, and prepared light is visited
Device is surveyed after follow-up photoelectric properties test, with good restorability.
Description of the drawings
Fig. 1 is the method in one embodiment of the invention through preparing quantum dot photo detector array device based on inkjet technology
Flow chart.
Fig. 2 is the overall structure diagram of substrate in one embodiment of the invention.
Fig. 3 is the top view of substrate in one embodiment of the invention.
Fig. 4 is the side view of substrate in one embodiment of the invention.
Fig. 5 is the overall structure diagram after printing silver electrode in one embodiment of the invention on substrate.
Fig. 6 is the top view after printing silver electrode in one embodiment of the invention on substrate.
Fig. 7 is the side view after printing silver electrode in one embodiment of the invention on substrate.
Fig. 8 is the overall structure diagram after printing silver electrode/quantum dot in one embodiment of the invention on substrate.
Fig. 9 is the top view after printing silver electrode/quantum dot in one embodiment of the invention on substrate.
Figure 10 is the side view after printing silver electrode/quantum dot in one embodiment of the invention on substrate.
Figure 11 is that the overall structure after printing silver electrode/quantum dot/copper electrode in one embodiment of the invention on substrate is illustrated
Figure.
Figure 12 is the top view after printing silver electrode/quantum dot/copper electrode in one embodiment of the invention on substrate.
Figure 13 is the side view after printing silver electrode/quantum dot/copper electrode in one embodiment of the invention on substrate
【Label declaration】：1- substrate；2- silver electrode；3- quantum dot；4- copper electrode.
Specific embodiment
Below in conjunction with the accompanying drawings, technical scheme is specifically described.
The present invention provides a kind of method for preparing quantum dot photo detector array device based on inkjet technology, using ink-jet
Method of printing prints silver electrode array, copper electrode array and quantum dot array to prepare light-detecting device on substrate respectively,
And photoelectric properties test is carried out to the light-detecting device.
Further, in the present embodiment, as shown in figure 1, the inkjet printing methods are realized in accordance with the following steps, and scheme
11 is the overall structure diagram of prepared light-detecting device：
Step S1：To substrate processing：Substrate for printing is carried out, removes the surface impurity of the substrate；Enter
Row plasma treatment, to improve infiltration of the marking ink to the substrate；And plasma treated after, purge the lining with nitrogen
Bottom；In the present embodiment, plasma treatment is carried out to the substrate, and is soaked using chloroform, described in order to improve
Substrate surface for roughness；The substrate is common PET or simple glass, as shown in Fig. 2 ~ Fig. 4, respectively substrate 1 or substrate
Overall structure diagram, top view and side view.
Step S2：The preparation of silver electrode array：100 × 10 silver electricity is printed using 80 microns of shower nozzles over the substrate
Pole array, wherein, the x-axis dot spacing of the silver electrode array is 600 microns, and 100 microns of y-axis dot spacing, the silver electrode are thick
Spend for 43 nanometers, the print span of the silver electrode is 180 microns；In the present embodiment, by being used for printing the silver electricity
The silver electrode marking ink of pole array presses 1 with n-butanol：1 ratio is mixed, in order to adjust the viscosity of silver electrode marking ink
And tension force；As shown in Fig. 5 ~ 7, it is overall structure diagram after printing silver electrode 2 on substrate 1, top view and side view.
Step S3：The preparation of quantum dot array：10 × 100 are printed in the silver electrode array using 80 microns of shower nozzles
Quantum dot array, and the quantum dot array corresponds to and is horizontally placed in the silver electrode array, wherein, the y of the quantum dot array
Axle dot spacing is 900 microns, 100 microns of x-axis dot spacing, and the quantum dot array thickness is 30 nanometers to 40 nanometers；In this reality
Apply in example, by will be used for printing the quantum dot marking ink of quantum dot array and normal butane by 1：1 ratio is mixed, in order to
The viscosity of quantum point marking ink and tension force；The quantum dot marking ink is CdSe or PbS, and the quantum dot is beaten
The concentration of printing ink is 5mg/ml；As shown in Fig. 8 ~ 10, it is that the overall structure after printing 2/ quantum dot 3 of silver electrode on substrate 1 is shown
Intention, top view and side view.
Step S4：The preparation of the copper electrode of device electrode：Using 80 microns of shower nozzles, in the silver electrode array, silver is electric
The copper electrode array of corresponding printing 100 × 10 between pole, i.e., described silver electrode are interlocked with the copper electrode in the copper electrode array
Arrangement；Wherein, the x-axis dot spacing of the copper electrode array is 600 microns, 100 microns of y-axis dot spacing, the copper electrode array
Thickness be 40 nanometers to 50 nanometers, the print span of the copper electrode is 160 microns to 200 microns, the adjacent silver electricity
Between pole and the copper electrode, distance is 100 microns to 140 microns；By will print for the copper electrode for printing copper electrode array
Ink presses 1 with n-butanol：1 ratio is mixed, in order to adjust viscosity and the tension force of copper electrode marking ink；As Figure 11 ~ 13
Shown, it is overall structure diagram after printing 3/ copper electrode 4 of silver electrode 2/ quantum dot on substrate 1, top view and side view.
Further, in the present embodiment, according to the actual requirements the made light-detecting device that gets ready can be cut.
Further, in the present embodiment, the light-detecting device is being carried out in photoelectric properties test process, described
Add the voltage of 0.5V to 3V between silver electrode array and the copper electrode array, and the light-detecting device is respectively placed in list
Under color light source, by changing the emission wavelength of the monochromatic source, voltage-to-current survey is carried out to the light-detecting device, and is obtained
Electric current is taken under constant voltage with regard to the relation of emission wavelength.Preferably, carry out photoelectric properties to the light-detecting device to test
Cheng Zhong, adds positive voltage in the silver electrode array, adds negative voltage in the copper electrode array, by using 200 nanometers to 1600
The excitation wavelength of nanometer irradiates the light-detecting device, and carries out voltage-to-current test using semi-conductor test instrument.
Further, in another embodiment, the light-detecting device is being carried out in photoelectric properties test process, in institute
The voltage for adding 0.5V to 3V between silver electrode array and the copper electrode array is stated, and the light-detecting device is positioned over dark
Under the conditions of, carry out voltage-to-current survey to the light-detecting device, and electric current is obtained under constant voltage with regard to the pass of emission wavelength
System.Preferably, the light-detecting device is carried out in photoelectric properties test process, adds positive voltage in the silver electrode permutation,
The copper electrode array adds negative voltage, and device is placed in darkroom, carries out Current Voltage test using semi-conductor test instrument.
In order to allow those skilled in the art to further appreciate that, one kind proposed by the invention is prepared based on inkjet technology
The method of quantum dot light detection array device, illustrates with reference to specific embodiment and 1 ~ Figure 13 of accompanying drawing.
Embodiment 1
Step S1：15min is cleaned by ultrasonic with acetone, ethanol and deionized water respectively to the common PET substrate for printing,
Remove the surface impurity of the common PET substrate；Plasma treatment 10min is carried out, marking ink is improved to the common PET
The infiltration of substrate；And plasma treated after, purge the common PET substrate with nitrogen；In the present embodiment, to described common
PET substrate carries out plasma treatment, and is soaked using chloroform, coarse in order to improve the common PET substrate surface
Degree.
Step S2：Print using on shower nozzle of the ink-jet printer jetlab2 on the common PET substrate with 80 microns
100 × 10 silver electrode array, is heat-treated silver electrode, wherein, the x of the silver electrode array under 80 degree celsius temperature after printing
Axle dot spacing is 600 microns, 100 microns of y-axis dot spacing, and the silver electrode thickness is 50 nanometers, the printing width of the silver electrode
Spend for 160 microns；In the present embodiment, by will be used for printing silver electrode marking ink and the n-butanol of the silver electrode array
By 1：1 ratio is mixed, in order to adjust viscosity and the tension force of silver electrode marking ink.In other embodiments, silver electrode
Thickness also can use 43 nanometers, 45 nanometers, 47 nanometers etc., and the print span of silver electrode also can use 160 microns, 180 microns, and 200
Micron etc..
Step S3：10 × 100 CdSe quantum dot quantum is printed using 80 microns of shower nozzles in the silver electrode array
Lattice array, and the CdSe quantum dot quantum dot array corresponds to and is horizontally placed in the silver electrode array, wherein, the CdSe quantum dot
The y-axis dot spacing of quantum dot array is 900 microns, 100 microns of x-axis dot spacing, the CdSe quantum dot quantum dot array thickness
For 40 nanometers；In the present embodiment, by CdSe quantum dot marking ink is pressed 1 with normal butane：1 ratio is mixed, in order to
Adjust viscosity and the tension force of CdSe quantum dot marking ink；The concentration of the CdSe quantum dot marking ink is 5mg/ml.?
In other embodiment, CdSe quantum dot quantum dot array thickness also can use 32 nanometers, 35 nanometers, 37 nanometers etc..
Step S4：Using 80 microns of shower nozzles in corresponding printing 100 × 10 between silver electrode in the silver electrode array
Copper electrode array, i.e., described silver electrode are staggered with the copper electrode in the copper electrode array；Wherein, the copper electrode array
X-axis dot spacing be 600 microns, 100 microns of y-axis dot spacing, the thickness of the copper electrode array are 50 nanometers, the copper electrode
Print span be 160 microns, between the adjacent silver electrode and the copper electrode distance be 140 microns；By being used for
Print the copper electrode marking ink of copper electrode array and n-butanol presses 1：1 ratio is mixed, in order to adjust copper electrode stamping ink
The viscosity of water and tension force.In other embodiments, the thickness of copper electrode array also can use 43 nanometers, 45 nanometers, 47 nanometers etc.
Print span Deng, copper electrode also can use 180 microns, 190 microns, 200 microns etc., the adjacent silver electrode and the copper
120 microns of distance between electrode, 110 microns, 100 microns etc..
Finally prepared photo-detector is dried and tested, i.e., in copper electrode and silver electrode two ends making alive, by light
Sensitive detection parts are placed under the dark and monochromatic source of difference excitation wavelengths and carry out I-V test.
Embodiment 2
Step S1：15 are cleaned by ultrasonic with acetone, ethanol and deionized water respectively to the common PET substrate for printing
Min, removes the surface impurity of the common PET substrate；Plasma treatment 10min is carried out, marking ink is improved to described general
The infiltration of logical PET substrate；And plasma treated after, purge the common PET substrate with nitrogen；In the present embodiment, to institute
Stating common PET substrate carries out plasma treatment, and is soaked using chloroform, in order to improve the common PET substrate table
Surface roughness.
Step S2：Print using on shower nozzle of the ink-jet printer jetlab2 on the common PET substrate with 80 microns
100 × 10 silver electrode array, is heat-treated silver electrode, wherein, the x of the silver electrode array under 80 degree celsius temperature after printing
Axle dot spacing is 600 microns, 100 microns of y-axis dot spacing, and the silver electrode thickness is 50 nanometers, the printing width of the silver electrode
Spend for 160 microns；In the present embodiment, by will be used for printing silver electrode marking ink and the n-butanol of the silver electrode array
By 1：1 ratio is mixed, in order to adjust viscosity and the tension force of silver electrode marking ink.In other embodiments, silver electrode
Thickness also can use 43 nanometers, 45 nanometers, 47 nanometers etc., and the print span of silver electrode also can use 160 microns, 180 microns, and 200
Micron etc..
Step S3：10 × 100 PbS quantum quantum dot is printed using 80 microns of shower nozzles in the silver electrode array
Array, and the PbS quantum quantum dot array corresponds to and is horizontally placed in the silver electrode array, wherein, the PbS quantum quantum
The y-axis dot spacing of lattice array is 900 microns, and 100 microns of x-axis dot spacing, the PbS quantum quantum dot array thickness are received for 40
Rice；In the present embodiment, by PbS quantum marking ink is pressed 1 with normal butane：1 ratio is mixed, in order to adjust PbS
The viscosity of quantum dot marking ink and tension force；The concentration of the PbS quantum marking ink is 5mg/ml.In other embodiment
In, PbS quantum quantum dot array thickness also can use 32 nanometers, 35 nanometers, 37 nanometers etc..
Step S4：Using 80 microns of shower nozzles in corresponding printing 100 × 10 between silver electrode in the silver electrode array
Copper electrode array, i.e., described silver electrode are staggered with the copper electrode in the copper electrode array；Wherein, the copper electrode array
X-axis dot spacing be 600 microns, 100 microns of y-axis dot spacing, the thickness of the copper electrode array are 50 nanometers, the copper electrode
Print span be 160 microns, between the adjacent silver electrode and the copper electrode distance be 140 microns；By being used for
Print the copper electrode marking ink of copper electrode array and n-butanol presses 1：1 ratio is mixed, in order to adjust copper electrode stamping ink
The viscosity of water and tension force.In other embodiments, the thickness of copper electrode array also can use 43 nanometers, 45 nanometers, 47 nanometers etc.
Print span Deng, copper electrode also can use 180 microns, 190 microns, 200 microns etc., the adjacent silver electrode and the copper
120 microns of distance between electrode, 110 microns, 100 microns etc..
Finally prepared photo-detector is dried and tested, i.e., in copper electrode and silver electrode two ends making alive, by light
Sensitive detection parts are placed under the dark and monochromatic source of difference excitation wavelengths and carry out I-V test.
Embodiment 3
Step S1：15 are cleaned by ultrasonic with acetone, ethanol and deionized water respectively to the common glass substrate for printing
Min, removes the surface impurity of the common glass substrate；Plasma treatment 10min is carried out, marking ink is improved to described general
The infiltration of logical glass substrate；And plasma treated after, purge the common glass substrate with nitrogen；In the present embodiment, right
The common glass substrate carries out plasma treatment, and is soaked using chloroform, in order to improve simple glass lining
Basal surface roughness.
Step S2：Print using on shower nozzle of the ink-jet printer jetlab2 on the common glass substrate with 80 microns
100 × 10 silver electrode array, is heat-treated silver electrode, wherein, the x of the silver electrode array under 80 degree celsius temperature after printing
Axle dot spacing is 600 microns, 100 microns of y-axis dot spacing, and the silver electrode thickness is 50 nanometers, the printing width of the silver electrode
Spend for 160 microns；In the present embodiment, by will be used for printing silver electrode marking ink and the n-butanol of the silver electrode array
By 1：1 ratio is mixed, in order to adjust viscosity and the tension force of silver electrode marking ink.In other embodiments, silver electrode
Thickness also can use 43 nanometers, 45 nanometers, 47 nanometers etc., and the print span of silver electrode also can use 160 microns, 180 microns, and 200
Micron etc..
Step S3：10 × 100 CdSe quantum dot quantum is printed using 80 microns of shower nozzles in the silver electrode array
Lattice array, and the CdSe quantum dot quantum dot array corresponds to and is horizontally placed in the silver electrode array, wherein, the CdSe quantum dot
The y-axis dot spacing of quantum dot array is 900 microns, 100 microns of x-axis dot spacing, the CdSe quantum dot quantum dot array thickness
For 40 nanometers；In the present embodiment, by CdSe quantum dot marking ink is pressed 1 with normal butane：1 ratio is mixed, in order to
Adjust viscosity and the tension force of CdSe quantum dot marking ink；The concentration of the CdSe quantum dot marking ink is 5mg/ml.?
In other embodiment, CdSe quantum dot quantum dot array thickness also can use 32 nanometers, 35 nanometers, 37 nanometers etc..
Step S4：Using 80 microns of shower nozzles in corresponding printing 100 × 10 between silver electrode in the silver electrode array
Copper electrode array, i.e., described silver electrode are staggered with the copper electrode in the copper electrode array；Wherein, the copper electrode array
X-axis dot spacing be 600 microns, 100 microns of y-axis dot spacing, the thickness of the copper electrode array are 50 nanometers, the copper electrode
Print span be 160 microns, between the adjacent silver electrode and the copper electrode distance be 140 microns；By being used for
Print the copper electrode marking ink of copper electrode array and n-butanol presses 1：1 ratio is mixed, in order to adjust copper electrode stamping ink
The viscosity of water and tension force.In other embodiments, the thickness of copper electrode array also can use 43 nanometers, 45 nanometers, 47 nanometers etc.
Print span Deng, copper electrode also can use 180 microns, 190 microns, 200 microns etc., the adjacent silver electrode and the copper
120 microns of distance between electrode, 110 microns, 100 microns etc..
Finally prepared photo-detector is dried and tested, i.e., in copper electrode and silver electrode two ends making alive, by light
Sensitive detection parts are placed under the dark and monochromatic source of difference excitation wavelengths and carry out I-V test.
Embodiment 4
Step S1：15 are cleaned by ultrasonic with acetone, ethanol and deionized water respectively to the common glass substrate for printing
Min, removes the surface impurity of the common glass substrate；Plasma treatment 10min is carried out, marking ink is improved to described general
The infiltration of logical glass substrate；And plasma treated after, purge the common glass substrate with nitrogen；In the present embodiment, right
The common glass substrate carries out plasma treatment, and is soaked using chloroform, in order to improve simple glass lining
Basal surface roughness.
Step S2：Print using on shower nozzle of the ink-jet printer jetlab2 on the common glass substrate with 80 microns
100 × 10 silver electrode array, is heat-treated silver electrode, wherein, the x of the silver electrode array under 80 degree celsius temperature after printing
Axle dot spacing is 600 microns, 100 microns of y-axis dot spacing, and wherein, the x-axis dot spacing of the copper electrode array is 600 microns, y
100 microns of axle dot spacing, the thickness of the copper electrode array is 50 nanometers, and the print span of the copper electrode is 160 microns, phase
Between the adjacent silver electrode and the copper electrode, distance is 140 microns；By will be used for printing the copper electrode of copper electrode array
Marking ink presses 1 with n-butanol：1 ratio is mixed, in order to adjust viscosity and the tension force of copper electrode marking ink.At other
In embodiment, the thickness of copper electrode array also can use 43 nanometers, and 45 nanometers, 47 nanometers etc., the print span of copper electrode may be used also
180 microns are taken, 190 microns, 200 microns etc., 120 microns of distance between the adjacent silver electrode and the copper electrode, 110
Micron, 100 microns etc..
Step S3：10 × 100 PbS quantum quantum dot is printed using 80 microns of shower nozzles in the silver electrode array
Array, and the PbS quantum quantum dot array corresponds to and is horizontally placed in the silver electrode array, wherein, the PbS quantum quantum
The y-axis dot spacing of lattice array is 900 microns, and 100 microns of x-axis dot spacing, the PbS quantum quantum dot array thickness are received for 40
Rice；In the present embodiment, by PbS quantum marking ink is pressed 1 with normal butane：1 ratio is mixed, in order to adjust PbS
The viscosity of quantum dot marking ink and tension force；The concentration of the PbS quantum marking ink is 5mg/ml.In other embodiment
In, PbS quantum quantum dot array thickness also can use 32 nanometers, 35 nanometers, 37 nanometers etc..
Step S4：Using 80 microns of shower nozzles in corresponding printing 100 × 10 between silver electrode in the silver electrode array
Copper electrode array, i.e., described silver electrode are staggered with the copper electrode in the copper electrode array；Wherein, the copper electrode array
X-axis dot spacing be 600 microns, 100 microns of y-axis dot spacing, the thickness of the copper electrode array are 50 nanometers, the copper electrode
Print span be 160 microns, between the adjacent silver electrode and the copper electrode distance be 140 microns；By being used for
Print the copper electrode marking ink of copper electrode array and n-butanol presses 1：1 ratio is mixed, in order to adjust copper electrode stamping ink
The viscosity of water and tension force.In other embodiments, the thickness of copper electrode array also can use 43 nanometers, 45 nanometers, 47 nanometers etc.
Print span Deng, copper electrode also can use 180 microns, 190 microns, 200 microns etc., the adjacent silver electrode and the copper
120 microns of distance between electrode, 110 microns, 100 microns etc..
Finally prepared photo-detector is dried and tested, i.e., in copper electrode and silver electrode two ends making alive, by light
Sensitive detection parts are placed under the dark and monochromatic source of difference excitation wavelengths and carry out I-V test.
It is more than presently preferred embodiments of the present invention, all changes that is made according to technical solution of the present invention, produced function are made
During with scope without departing from technical solution of the present invention, protection scope of the present invention is belonged to.
Claims (9)
1. a kind of method that quantum dot photo detector array device is prepared based on inkjet technology, it is characterised in that adopt ink-jet
Method of printing prints silver electrode array, copper electrode array and quantum dot array to prepare light-detecting device on substrate respectively,
And photoelectric properties test is carried out to the light-detecting device；
The inkjet printing methods are realized in accordance with the following steps：
Step S1：Substrate for printing is carried out, removes the surface impurity of the substrate；Plasma treatment is carried out, with
Improve infiltration of the marking ink to the substrate；And plasma treated after, purge the substrate with nitrogen；
Step S2：100 × 10 silver electrode array is printed using 80 microns of shower nozzles over the substrate, wherein, the silver electricity
The x-axis dot spacing of pole array is 600 microns, 100 microns of y-axis dot spacing, and the silver electrode thickness is 40 nanometers to 50 nanometers, institute
The print span for stating silver electrode is 160 microns to 200 microns；
Step S3：10 × 100 quantum dot array, and the quantum is printed using 80 microns of shower nozzles in the silver electrode array
Lattice array is corresponded to and is horizontally placed in the silver electrode array, wherein, and the y-axis dot spacing of the quantum dot array is 900 microns, x-axis
100 microns of dot spacing, the quantum dot array thickness are 30 nanometers to 40 nanometers；
Step S4：The copper electricity of printing 100 × 10 is being corresponded in the silver electrode array between silver electrode using 80 microns of shower nozzles
Pole array, i.e., described silver electrode are staggered with the copper electrode in the copper electrode array；Wherein, the x of the copper electrode array
Axle dot spacing is 600 microns, 100 microns of y-axis dot spacing, and the thickness of the copper electrode array is for 40 nanometers to 50 nanometers, described
The print span of copper electrode is 160 microns to 200 microns, and between the adjacent silver electrode and the copper electrode, distance is 100
Micron is to 140 microns.
2. a kind of method that quantum dot photo detector array device is prepared based on inkjet technology according to claim 1,
Characterized in that, in step S1, carrying out plasma treatment to the substrate, and being soaked using chloroform, use
To improve the substrate surface for roughness；The substrate is common PET or simple glass.
3. a kind of method that quantum dot photo detector array device is prepared based on inkjet technology according to claim 1,
Characterized in that, in step S2, by by for printing the silver electrode marking ink of the silver electrode array and positive fourth
Alcohol presses 1：1 ratio is mixed, in order to adjust viscosity and the tension force of silver electrode marking ink.
4. a kind of method that quantum dot photo detector array device is prepared based on inkjet technology according to claim 1,
Characterized in that, in step S3, by will press with normal butane for the quantum dot marking ink for printing quantum dot array
1：1 ratio is mixed, the viscosity in order to quantum point marking ink and tension force；The quantum dot marking ink is CdSe
Or PbS, and the concentration of the quantum dot marking ink is 5mg/ml.
5. a kind of method that quantum dot photo detector array device is prepared based on inkjet technology according to claim 2,
Characterized in that, in step S4, by will press with n-butanol for the copper electrode marking ink for printing copper electrode array
1：1 ratio is mixed, in order to adjust viscosity and the tension force of copper electrode marking ink.
6. a kind of method that quantum dot photo detector array device is prepared based on inkjet technology according to claim 1,
Characterized in that, the light-detecting device is being carried out in photoelectric properties test process, in the silver electrode array and the copper
Add the voltage of 0.5V to 3V between electrod-array, and the light-detecting device is respectively placed under monochromatic source, by changing
The excitation wavelength of the monochromatic source, carries out voltage-to-current survey, and obtains electric current under constant voltage closing to the light-detecting device
Relation in emission wavelength.
7. a kind of method that quantum dot photo detector array device is prepared based on inkjet technology according to claim 6,
Characterized in that, carrying out to the light-detecting device in photoelectric properties test process, add positive voltage in the silver electrode array,
The copper electrode array adds negative voltage, irradiates the light-detecting device by the excitation wavelength using 200 nanometers to 1600 nanometers,
And voltage-to-current test is carried out using semi-conductor test instrument.
8. a kind of method that quantum dot photo detector array device is prepared based on inkjet technology according to claim 1,
Characterized in that, the light-detecting device is being carried out in photoelectric properties test process, in the silver electrode array and the copper
Add the voltage of 0.5V to 3V between electrod-array, and the light-detecting device is positioned under dark condition, to the optical detection
Device carries out voltage-to-current test, and obtains under constant voltage electric current with regard to the relation of emission wavelength.
9. a kind of method that quantum dot photo detector array device is prepared based on inkjet technology according to claim 8,
Characterized in that, carrying out to the light-detecting device in photoelectric properties test process, add positive voltage in the silver electrode permutation,
The copper electrode array adds negative voltage, and the light-detecting device is placed in darkroom, using semi-conductor test instrument carry out voltage-
Testing current.
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| CN106711283B (en) * | 2016-12-27 | 2019-05-24 | 南京理工大学 | A kind of all print zinc oxide nanocrystalline base ultraviolet light electric explorer preparation method |
| CN108944066A (en) * | 2017-05-19 | 2018-12-07 | 中国科学院化学研究所 | A kind of printhead module printing laser light source |
| CN108948857A (en) * | 2017-05-19 | 2018-12-07 | 中国科学院化学研究所 | A method of printing laser light source |
| CN115079428A (en) * | 2017-05-19 | 2022-09-20 | 中国科学院化学研究所 | Laser display |
| CN108944032A (en) * | 2017-05-19 | 2018-12-07 | 中国科学院化学研究所 | A kind of system printing laser light source |
| CN115663597A (en) * | 2017-05-19 | 2023-01-31 | 中国科学院化学研究所 | Laser array device |
| CN108957777A (en) * | 2017-05-19 | 2018-12-07 | 中国科学院化学研究所 | A kind of laser writer of voltage driving |
| CN108957779A (en) * | 2017-05-19 | 2018-12-07 | 中国科学院化学研究所 | A kind of laser panel |
| CN107768483B (en) * | 2017-10-30 | 2019-10-11 | 河南科技大学 | A kind of preparation method of full printing zinc oxide ultraviolet detector |
| CN107768458B (en) * | 2017-10-30 | 2019-10-11 | 河南科技大学 | A kind of preparation method of semiconductor devices |
| CN108020958B (en) * | 2017-12-04 | 2020-09-01 | 福州大学 | Packaging structure for direct type backlight source and manufacturing method thereof |
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| CN109461779B (en) * | 2018-11-05 | 2020-06-19 | 吉林建筑大学 | Metal grid electrode preparation method based on ink-jet printing technology |
| CN109686806A (en) * | 2018-12-11 | 2019-04-26 | 中国科学院半导体研究所 | The spectral detector device and preparation method that a kind of visible light to near-infrared integrates |
| CN109852141B (en) * | 2019-01-04 | 2021-12-31 | 苏州星烁纳米科技有限公司 | Ink composition and preparation method of electroluminescent device |
| CN110976250B (en) * | 2019-12-26 | 2021-10-08 | 上海大学 | Scintillator preparation method |
| CN111697109A (en) * | 2020-07-09 | 2020-09-22 | 上海大学 | Preparation method and system of flexible X-ray detector |
| CN113147190A (en) * | 2021-03-26 | 2021-07-23 | 苏州贝依泽服饰有限公司 | Quantum dot working system for upgrading old advertising board and using method thereof |
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| US20130192663A1 (en) * | 2010-09-15 | 2013-08-01 | Stephen J. Fonash | Single and multi-junction light and carrier collection management cells |
| CN103489939B (en) * | 2012-06-14 | 2016-04-20 | 苏州协鑫工业应用研究院有限公司 | Many knots hetero quntum point array and preparation method thereof and many knot hetero quntum point solar cells and preparation method thereof |
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