CN103928581A - Led芯片及其倒封装制作方法 - Google Patents
Led芯片及其倒封装制作方法 Download PDFInfo
- Publication number
- CN103928581A CN103928581A CN201410186466.5A CN201410186466A CN103928581A CN 103928581 A CN103928581 A CN 103928581A CN 201410186466 A CN201410186466 A CN 201410186466A CN 103928581 A CN103928581 A CN 103928581A
- Authority
- CN
- China
- Prior art keywords
- layer
- sio
- etching
- manufacture method
- led chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 29
- 239000010410 layer Substances 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims abstract description 64
- 238000005530 etching Methods 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 229910005544 NiAg Inorganic materials 0.000 claims abstract description 32
- 239000011241 protective layer Substances 0.000 claims abstract description 21
- 230000008021 deposition Effects 0.000 claims abstract description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 238000001259 photo etching Methods 0.000 claims description 12
- 238000009616 inductively coupled plasma Methods 0.000 claims description 7
- 239000003595 mist Substances 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 12
- 229910052681 coesite Inorganic materials 0.000 abstract 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract 6
- 239000000377 silicon dioxide Substances 0.000 abstract 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract 6
- 229910052682 stishovite Inorganic materials 0.000 abstract 6
- 229910052905 tridymite Inorganic materials 0.000 abstract 6
- 239000013067 intermediate product Substances 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 230000000717 retained effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410186466.5A CN103928581B (zh) | 2014-05-05 | 2014-05-05 | Led芯片及其倒封装制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410186466.5A CN103928581B (zh) | 2014-05-05 | 2014-05-05 | Led芯片及其倒封装制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103928581A true CN103928581A (zh) | 2014-07-16 |
CN103928581B CN103928581B (zh) | 2016-11-02 |
Family
ID=51146737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410186466.5A Active CN103928581B (zh) | 2014-05-05 | 2014-05-05 | Led芯片及其倒封装制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103928581B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110284983A1 (en) * | 2010-05-21 | 2011-11-24 | Solapoint Corporation | Photodiode device and manufacturing method thereof |
US20120256187A1 (en) * | 2011-03-17 | 2012-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Double substrate multi-junction light emitting diode array structure |
CN103000770A (zh) * | 2011-09-15 | 2013-03-27 | 张庆 | 一种控制阵列式高压led侧壁倾斜角度的新工艺 |
-
2014
- 2014-05-05 CN CN201410186466.5A patent/CN103928581B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110284983A1 (en) * | 2010-05-21 | 2011-11-24 | Solapoint Corporation | Photodiode device and manufacturing method thereof |
US20120256187A1 (en) * | 2011-03-17 | 2012-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Double substrate multi-junction light emitting diode array structure |
CN103000770A (zh) * | 2011-09-15 | 2013-03-27 | 张庆 | 一种控制阵列式高压led侧壁倾斜角度的新工艺 |
Also Published As
Publication number | Publication date |
---|---|
CN103928581B (zh) | 2016-11-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: 215123 Suzhou Province Industrial Park, Jiangsu new road, No. 8 Applicant after: FOCUS LIGHTINGS TECHNOLOGY CO., LTD. Address before: 215123 Suzhou Province Industrial Park, Jiangsu new road, No. 8 Applicant before: Focus Lightings Tech Inc. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: FOCUS LIGHTING (SUZHOU) CO., LTD. TO: FOCUS LIGHINGS TECHNOLOGY CO., LTD. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200907 Address after: 223800 west side of development avenue of Suqian economic and Technological Development Zone in Jiangsu province (room 2005 of business center) Patentee after: FOCUS LIGHTINGS TECHNOLOGY (SUQIAN) Co.,Ltd. Address before: 215123 No. 8 Qing Qing Road, Suzhou Industrial Park, Jiangsu, China Patentee before: FOCUS LIGHTINGS SCIENCE & TECHNOLOGY Co.,Ltd. |
|
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: 223800 south of Dongwu Road, Suqian Economic and Technological Development Zone, Jiangsu Province Patentee after: FOCUS LIGHTINGS TECHNOLOGY (SUQIAN) Co.,Ltd. Address before: 223800 west side of development avenue of Suqian economic and Technological Development Zone in Jiangsu province (room 2005 of business center) Patentee before: FOCUS LIGHTINGS TECHNOLOGY (SUQIAN) Co.,Ltd. |