CN103928562A - Method for preparing Ge photoelectric detector with transverse p-i-n structure - Google Patents
Method for preparing Ge photoelectric detector with transverse p-i-n structure Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 31
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910006137 NiGe Inorganic materials 0.000 claims abstract description 16
- 229910005883 NiSi Inorganic materials 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 238000004377 microelectronic Methods 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 238000002360 preparation method Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000002513 implantation Methods 0.000 claims description 7
- 238000002161 passivation Methods 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000004151 rapid thermal annealing Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 238000004062 sedimentation Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- -1 phosphonium ion Chemical class 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/1808—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only Ge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a method for preparing a Ge photoelectric detector with a transverse p-i-n structure, and relates to the germanium photoelectric detector. The method comprises the steps of (1) carrying out epitaxial growth of a monocrystalline germanium layer on a substrate, growing a SiO2 covering layer on the monocrystalline germanium layer, (2) using a micro-electronics photolithography to etch an active area platform surface of a long and thin strip shape on the epitaxial monocrystalline germanium layer, (3) using the SiO2 covering layer on the monocrystalline germanium layer for masking, forming a doped p area and a doped n area on the two sides of the platform surface respectively through sidewise large-declination ion implantation, (4) carrying out thermal annealing after deposition of a metal Ni layer, forming NiGe contact electrodes and NiSi contact electrodes on the two sides of the platform surface and the bottom of the etched area through a self-alignment technology used in the forming process of NiGe and NiSi, and (5) leading out the device electrodes, and protecting a passivating layer. Therefore, the Ge photoelectric detector with the transverse p-i-n structure is obtained. The technology is simple, operability is high, and high application value is achieved.
Description
Technical field
The present invention relates to a kind of germanium photodetector, particularly a kind of preparation method of horizontal p-i-n structure Ge photodetector.
Background technology
Studies show that, the power consumption that surpasses half in integrated circuit (IC) chip concentrates on the interconnection of chip, and interconnection simultaneously is also subject to the restriction of signal transmission bandwidth.In the long run, introduce light interconnecting parts replace electrical interconnection at chip internal, the photon of usining is realized the transmission of high-speed low-power-consumption signal as carrier, is further integrated inevitable requirement of chip.In silicon-based optical interconnection, the photodetector that light signal is converted to the signal of telecommunication is the important devices that realizes the interconnection of sheet glazing.The method of making photodetector is that direct epitaxial Germanium (Ge) material is prepared long wavelength light electric explorer as active area on silicon.Ge is collimation tape splicing gap material, and the wavelength below 1.55 μ m is had to strong absorption, is the preferred material of making photodetector.
Ge photodetector in developing in the world in recent years reaches 30GHz magnitude ([1] Chong Li one after another, Chunlai Xue, Zhi Liu, Buwen Cheng, Chuanbo Li, and Qiming Wang, High-bandwidth and high-responsivity top-illuminated germanium photodiodes for optical interconnection, IEEE Trans.Electron Devices, 60,1183 – 1187, (2013); [2] S.Klinger, M.Berroth, M.Kaschel, M.Oehme, and E.Kasper, " Ge-on-Si p-i-n photodiodes with3-dB bandwidth of49GHz, " IEEE Photon.Technol.Lett., 21,920 – 922, (2009)).In the longitudinal Ge p-i-n of common vertical incidence photodetector, for improving device bandwidth of operation speed, usual way is by reducing intrinsic region thickness, to reduce the transit time of photo-generated carrier.But Ge intrinsic region is again the absorption region of vertical incidence light signal, and light absorption and photo-generated carrier are getted over equidirectional carrying out simultaneously, intrinsic region attenuate must cause the deficiency of light absorption simultaneously, thereby has reduced the light signal responsiveness of device.The contradiction of high speed and high-responsivity is the latent defect of the longitudinal p-i-n structure of vertical incidence Ge photodetector.
Therefore the Ge photodetector of waveguide type p-i-n structure causes researcher's concern day by day, during this device work, light signal is no longer from top vertical incidence, and introduce from side direction Si waveguide, getting over of the absorption of light signal and charge carrier is controlled in two orthogonal directions, fundamentally solved contradiction ([3] D.Feng between broadband and responsiveness, S.Liao, P.Dong, N.-N.Feng, H.Liang, D.Zheng, C.-C.Kung, J.Fong, R.Shafiiha, J.Cunningham, A.V.Krishnamoorthy, and M.Asghari, High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide, Appl.Phys.Lett., 95, 261105, (2009), [4] Shirong Liao, Ning-Ning Feng, Dazeng Feng, Po Dong, Roshanak Shafiiha, Cheng-Chih Kung, Hong Liang, Wei Qian, Yong Liu, Joan Fong, John E.Cunningham, Ying Luo, and Mehdi Asghari, 36GHz submicron silicon waveguide germanium photodetector, Optics Express, 19,10967-10972, (2011) .).Along with popularizing of waveguide type Ge detector research, traditional Ge photodetector also changes ([5] Laurent Vivien from longitudinal p-i-n structural design to horizontal p-i-n structural design, Andreas Polzer, Delphine Marris-Morini, Johann Osmond, Jean Michel Hartmann, Paul Crozat, Eric Cassan, Christophe Kopp, Horst Zimmermann, Jean Marc F é d é li, Zero-bias40Gbit/s germanium waveguide photodetector on silicon, Optics Express, 20, 1096-1101, (2012) .).Novel transverse is placed to the p-i-n knot along continuous straight runs in p-i-n structure Ge photodetector, and vertical with waveguide.P-i-n knot interface area after turning to is determined jointly by Ge epitaxy layer thickness and interface length, Ge epitaxy layer thickness is generally in 1 μ m left and right, interface length can be contracted to 10 μ m in Waveguide end face coupling situation, therefore interface area has obtained and has minimized, and means that this device is applicable to the ultrahigh speed condition of work of following integrated circuit.In addition, laterally p-i-n structure Ge photodetector structure is compact, is extremely conducive on device miniaturization and sheet optical interconnection system integrated.
Laterally the line size of p-i-n structure Ge photodetector, conventionally in sub-micrometer scale, needs advanced microelectronics photoetching process to complete.
Summary of the invention
The object of the invention is to coupled ion direction finding injects and NiGe self-registered technology, only by conventional etching condition, just can realize the horizontal p-i-n structure of submicron order line size Ge photodetector, technique is simple, the preparation method of the horizontal p-i-n structure Ge photodetector of superior performance.
The present invention comprises following steps:
1) epitaxial growth monocrystalline germanium layer on substrate, then the SiO that grows on germanium layer
2cover layer;
2) utilize microelectronics photoetching technique on extension monocrystalline germanium layer, to etch the active area table top of elongated bar;
3) utilize the SiO above monocrystalline germanium layer
2cover layer is sheltered, and forms doping p district and Doped n district by the large drift angle of side direction Implantation in table top both sides;
4) thermal annealing after plated metal Ni layer, the self-registered technology while utilizing NiGe, NiSi to form forms NiGe and NiSi contact electrode in table top both sides and bottom etched area;
5) draw device electrode, protection passivation layer, obtains horizontal p-i-n structure Ge photodetector.
In step 1) in, described substrate can adopt silicon SOI substrate on insulating barrier; Described growth can adopt molecular beam epitaxy, low-pressure chemical vapor deposition or high vacuum chemical vapour deposition homepitaxy technology; The thickness of described monocrystalline germanium layer can be 1 μ m; When if detector device need to be coupled with Waveguide end face, can utilize photoetching technique to form SiO
2figure is sheltered, after the Si layer in region, active area is carried out to etching attenuate, then selective epitaxial Ge, waveguiding structure can directly carry out etching to the Si layer of SOI and obtain; The described SiO that grows on germanium layer
2cover layer can strengthen chemical vapour deposition technique, SiO by using plasma
2tectal thickness can be greater than 200nm.
In step 2) in, the described microelectronics photoetching technique of utilizing etches the active area table top of elongated bar on extension monocrystalline germanium layer, can adopt photoresist protection active area, and line thickness is 1 μ m, to non-active region but need NiSi electrode zone etching to remove SiO
2cover layer and Ge layer, remove SiO to device isolation region etching
2cover layer, Ge layer and Si layer, the buried oxide of exposure SOI.
In step 3) in, the described SiO utilizing above monocrystalline germanium layer
2cover layer is sheltered, the method that forms doping p district and Doped n district by the large drift angle of side direction Implantation in table top both sides can be: need to form the direction of the table top both sides in doping p district and Doped n district over against active area, distinguish B Implanted (B) ion and phosphorus (P) ion at twice with wide-angle, rapid thermal annealing activates implanted dopant afterwards, forms p-i-n structure.
In step 4) in, described plated metal Ni layer can be by evaporation or sputtering sedimentation metal Ni layer; Described evaporation or sputter, for ensuring the Ni metal level that covers uniform thickness on the table top sidewall of source region, can evaporate or sputter completes at twice according to inclined deposition angle; By thermal annealing, Ni metal level is reacted with Ge and Si and form NiGe or NiSi contact electrode; Described metal Ni layer and Si layer complete reaction are complete, can be in step 2 if Si layer is thicker) in Si layer is added to etching.
In step 5) in, described in draw device electrode and can adopt aluminium wiring or other low resistance conductive material that electrode is drawn; The method of described protection passivation layer can adopt cvd silicon nitride or other dielectric layer to carry out passivation protection to the detector device making.
Coupled ion direction finding of the present invention is injected, NiGe self-registered technology, only with conventional etching condition, just realized the preparation of the horizontal p-i-n structure of submicron order line size Ge photodetector, can obtain the horizontal p-i-n structure of submicron order Ge photodetector, interface area is little, and can with combine with sheet glazing interconnection waveguiding structure; Technique is simply conducive to reduce manufacturing cost, and device also has the advantage that series resistance is little, is conducive to further boost device performance.
The present invention is on the horizontal p-i-n structure of existing waveguide type Ge photodetector basis, proposition is injected and NiGe self-registered technology with ion direction finding, under general etching condition, just can realize the preparation in sub-micrometer scale p-i-n interface, not only alleviated and made the required harsh submicron order photoetching requirement conventionally of horizontal p-i-n structure Ge photodetector, and control by the width of active area etching table top, Implantation severity control, control to Ge material consumption when the control of activation annealing conditions and NiGe contact electrode form, can fine adjustment p-i-n structure intrinsic region, the thickness of doped region, make the bandwidth of operation of device, it is optimum that the performances such as responsiveness reach.Structure and preparation method's technique of horizontal p-i-n structure Ge photodetector proposed by the invention are simple, workable, have using value.
Accompanying drawing explanation
Fig. 1 is horizontal p-i-n structure Ge photodetector schematic perspective view.Show the horizontal p-i-n structure Ge photodetector with Waveguide end face coupling.
Fig. 2 is the cross-section structure of horizontal p-i-n structure Ge photodetector active area.The Si top layer, extension Ge layer intrinsic region, the SiO that comprise SOI substrate
2the parts such as cover layer, extension GeCeng Doped n district, extension Ge floor doping p district and NiGe/NiSi contact electrode.
Fig. 3 is horizontal p-i-n structure Ge photodetector technical process figure.(a) extension Ge on SOI substrate, regrowth SiO on extension Ge layer
2cover layer; (b) photoetching and etching form the active area of p-i-n structure; (c) Implantation is done respectively in table top both sides, and annealing afterwards activates and forms p-i-n structure; (d) cover Ni metal level, annealing forms NiGe/NiSi contact electrode.
Embodiment
Coupled ion direction finding of the present invention is injected and NiGe self-registered technology, realizes the preparation of the horizontal p-i-n structure of submicron order line size Ge photodetector by conventional etching condition.
In step 1) in, the epitaxially grown substrate of Ge adopts silicon SOI substrate on insulating barrier.Growth can adopt two-step growth method to obtain under UHV condition, first on clean Si substrate, low temperature forms the low temperature Ge resilient coating (cryogenic temperature is about 350 ℃) of tens nanometer, the high temperature Ge layer (high-temperature temperature is about 650 ℃) of growing on resilient coating again, source of the gas is used germane, and Ge layer growth gross thickness is about 1 μ m.On extension germanium layer, with chemical vapour deposition technique, cover SiO again
2layer, thickness is more than 200nm.
In step 2) in, utilize microelectronics photoetching technique to form figure, with photoresist protection active region, to non-active region but need NiSi electrode zone etching to remove SiO
2cover layer and Ge layer, remove SiO to device isolation region dry etching
2cover layer, Ge layer and Si layer, the buried oxide of exposure SOI.Wherein, SiO
2cover layer is available wet method BOE buffered etch liquid (HF: NH also
4f: H
2o=30ml: 60g: 100ml) remove.
In step 3) in, to form the direction of doping p district and table top both sides, Doped n district over against needs, with wide-angle, distinguish B Implanted (B) ion and phosphorus (P) ion at twice, by Implantation Energy, control and inject the degree of depth, generally be no more than 100nm, through follow-up rapid thermal annealing, Impurity Diffusion severity control is at 200～300nm.
In step 4) in, for ensuring the Ni metal level that covers uniform thickness on the table top sidewall of source region, can or change by substrate tilting certain angle (as 45 °) that deposition direction evaporates at twice or sputter completes.By known, when the Ni metal level of unit thickness and Ge, Si solid phase reaction, will consume the Ge of 2.07 thickness or the Si of 1.83 thickness, ratio and the doped layer thickness that goes for are determined the thickness of Ni layer on sidewall accordingly, generally in 100nm left and right.By rapid thermal annealing, Ni metal level is reacted with Ge and Si and form NiGe or NiSi contact electrode, annealing is general selects 400 ℃, time 30s, nitrogen or argon shield.
In step 5) in, with aluminium wiring or other low resistance conductive material, electrode is drawn.Aluminium wiring can conventional photoetching and phosphoric acid corrosion technique obtain aluminum steel bar, also can lithography stripping technique obtain, aluminum layer thickness is generally more than 300nm.Device passivation layer is generally used silicon nitride, with chemical vapour deposition technique, covers device surface.
Claims (10)
1. the horizontal preparation method of p-i-n structure Ge photodetector, is characterized in that comprising the following steps:
1) epitaxial growth monocrystalline germanium layer on substrate, then the SiO that grows on germanium layer
2cover layer;
2) utilize microelectronics photoetching technique on extension monocrystalline germanium layer, to etch the active area table top of elongated bar;
3) utilize the SiO above monocrystalline germanium layer
2cover layer is sheltered, and forms doping p district and Doped n district by the large drift angle of side direction Implantation in table top both sides;
4) thermal annealing after plated metal Ni layer, the self-registered technology while utilizing NiGe, NiSi to form forms NiGe and NiSi contact electrode in table top both sides and bottom etched area;
5) draw device electrode, protection passivation layer, obtains horizontal p-i-n structure Ge photodetector.
2. the horizontal preparation method of p-i-n structure Ge photodetector as claimed in claim 1, is characterized in that in step 1) in, described substrate adopts silicon SOI substrate on insulating barrier; Described growth can adopt molecular beam epitaxy, low-pressure chemical vapor deposition or high vacuum chemical vapour deposition.
3. the horizontal preparation method of p-i-n structure Ge photodetector as claimed in claim 1, is characterized in that in step 1) in, the thickness of described monocrystalline germanium layer is 1 μ m.
4. the horizontal preparation method of p-i-n structure Ge photodetector as claimed in claim 1, is characterized in that in step 1) in, the described SiO that grows on germanium layer
2cover layer using plasma strengthens chemical vapour deposition technique, SiO
2tectal thickness can be greater than 200nm.
5. the horizontal preparation method of p-i-n structure Ge photodetector as claimed in claim 1; it is characterized in that in step 2) in; the described microelectronics photoetching technique of utilizing etches the active area table top of elongated bar on extension monocrystalline germanium layer; to adopt photoresist protection active area; line thickness is 1 μ m, to non-active region but need NiSi electrode zone etching to remove SiO
2cover layer and Ge layer, remove SiO to device isolation region etching
2cover layer, Ge layer and Si layer, the buried oxide of exposure SOI.
6. the horizontal preparation method of p-i-n structure Ge photodetector as claimed in claim 1, is characterized in that in step 3) in, the described SiO utilizing above monocrystalline germanium layer
2cover layer is sheltered, the method that forms doping p district and Doped n district by the large drift angle of side direction Implantation in table top both sides is: need to form the direction of the table top both sides in doping p district and Doped n district over against active area, distinguish B Implanted ion and phosphonium ion at twice with wide-angle, rapid thermal annealing activates implanted dopant afterwards, forms p-i-n structure.
7. the horizontal preparation method of p-i-n structure Ge photodetector as claimed in claim 1, is characterized in that in step 4) in, described plated metal Ni layer is by evaporation or sputtering sedimentation metal Ni layer.
8. the horizontal preparation method of p-i-n structure Ge photodetector as claimed in claim 7, it is characterized in that described evaporation or sputter, for ensuring the Ni metal level that covers uniform thickness on the table top sidewall of source region, according to inclined deposition angle, evaporate at twice or sputter completes.
9. the horizontal preparation method of p-i-n structure Ge photodetector as claimed in claim 1, is characterized in that in step 4) in, described thermal annealing makes Ni metal level react formation NiGe or NiSi contact electrode with Ge and Si; Described metal Ni layer and Si layer complete reaction are complete, can be in step 2 if Si layer is thicker) in Si layer is added to etching.
10. the horizontal preparation method of p-i-n structure Ge photodetector as claimed in claim 1, is characterized in that in step 5) in, described in draw device electrode and adopt aluminium wiring or other low resistance conductive material that electrode is drawn; The method of described protection passivation layer can adopt cvd silicon nitride or other dielectric layer to carry out passivation protection to the detector device making.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068784A (en) * | 2017-01-16 | 2017-08-18 | 中国科学院半导体研究所 | A kind of transversary germanium/silicon heterogenous avalanche photodetector and preparation method thereof |
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| CN109509808A (en) * | 2018-11-21 | 2019-03-22 | 温州大学 | A kind of photosensitive IMPATT diode of SiC/Si hetero-junctions lateral type and preparation method thereof |
| CN109686658A (en) * | 2018-12-13 | 2019-04-26 | 中国科学院微电子研究所 | Semiconductor devices and its production method |
| CN110491967A (en) * | 2019-09-02 | 2019-11-22 | 电子科技大学 | Reverse-biased type silicon shines SOI photoisolator, its integrated circuit and production method |
| US10571631B2 (en) | 2015-01-05 | 2020-02-25 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
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| US10571631B2 (en) | 2015-01-05 | 2020-02-25 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
| US10830952B2 (en) | 2015-01-05 | 2020-11-10 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
| US11703643B2 (en) | 2015-01-05 | 2023-07-18 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
| CN108258078A (en) * | 2016-12-29 | 2018-07-06 | 长沙理工大学 | SOI base gated lateral SAM structure blue violet light single-photon detectors and preparation method thereof |
| CN108258078B (en) * | 2016-12-29 | 2019-11-15 | 长沙理工大学 | SOI base gated lateral SAM structure blue violet light single-photon detector and preparation method thereof |
| CN107068784B (en) * | 2017-01-16 | 2019-07-19 | 中国科学院半导体研究所 | A kind of transverse structure germanium/silicon heterogenous avalanche photodetector and preparation method thereof |
| CN107068784A (en) * | 2017-01-16 | 2017-08-18 | 中国科学院半导体研究所 | A kind of transversary germanium/silicon heterogenous avalanche photodetector and preparation method thereof |
| CN107611192A (en) * | 2017-08-11 | 2018-01-19 | 西安科锐盛创新科技有限公司 | GeSn photodetectors |
| CN107658363A (en) * | 2017-08-11 | 2018-02-02 | 西安科锐盛创新科技有限公司 | Horizontal PiN structures photodetector |
| CN109509808A (en) * | 2018-11-21 | 2019-03-22 | 温州大学 | A kind of photosensitive IMPATT diode of SiC/Si hetero-junctions lateral type and preparation method thereof |
| CN109686658B (en) * | 2018-12-13 | 2021-03-09 | 中国科学院微电子研究所 | Semiconductor device and method for manufacturing the same |
| CN109686658A (en) * | 2018-12-13 | 2019-04-26 | 中国科学院微电子研究所 | Semiconductor devices and its production method |
| CN110491967A (en) * | 2019-09-02 | 2019-11-22 | 电子科技大学 | Reverse-biased type silicon shines SOI photoisolator, its integrated circuit and production method |
| CN110491967B (en) * | 2019-09-02 | 2021-03-02 | 电子科技大学 | Reverse bias type silicon light-emitting SOI photoelectric isolator, integrated circuit thereof and manufacturing method |
| CN112099311A (en) * | 2020-09-22 | 2020-12-18 | 桂林电子科技大学 | Preparation method of photoetching mask plate based on AAO nano structure |
| CN112099311B (en) * | 2020-09-22 | 2024-05-21 | 桂林电子科技大学 | Preparation method of photoetching mask based on AAO nanostructure |
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