CN103928364B - A kind of for detecting the structure of alloying level in eutectic bonding - Google Patents
A kind of for detecting the structure of alloying level in eutectic bonding Download PDFInfo
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- CN103928364B CN103928364B CN201410148635.6A CN201410148635A CN103928364B CN 103928364 B CN103928364 B CN 103928364B CN 201410148635 A CN201410148635 A CN 201410148635A CN 103928364 B CN103928364 B CN 103928364B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a kind of for detecting the structure of alloying level in eutectic bonding, it is characterized in that: described structure is included on eutectic bonding substrate the test electrode being connected with bonded layer, described test electrode is arranged between bonded layer and bonded substrate, cover bonded layer region, described test electrode is drawn lead pad.The present invention provide for detecting structure and the method for alloying level in bonding, by directly making electrode on bonding ring and testing structure, can the independent alloy situation in any region on test wafer, process uniformity is estimated；The present invention is not affected by substrate material, can carry out alloying analysis under any substrate or substrate top surface material context；The test connection of electrode resistance of the present invention uses four probe method and resistance matching type, can measure bonding ring electrical conductivity accurately, and precision and resolution are all far above prior art.
Description
Technical field
The present invention relates to a kind of structure for detecting bonding quality, particularly relate to a kind of for detecting alloy in eutectic bonding
The structure of change degree and method.
Background technology
Bonding is a kind of mode that two kinds of solids be combined with each other by the way of " key ", and atom can use electronics with difference
Mode be bonded, including covalent bond, ionic bond and metallic bond.
Bonding techniques conventional in modern semiconductor technology includes: electrostatic bonding, thermocompression bonding, glass sintering are bonded, directly
Connect bonding, eutectic bonding, organic bonding bonding etc..Wherein eutectic bonding is that a kind of two or more metal that passes through is one
Form low-melting alloy under certainty ratio thus realize the technology of bonding.Eutectic bonding has and is not limited by backing material, by key
Close the advantages such as surface roughness impact is little, have good hermetic properties, technological temperature is low, be that sensor wafer level is bonded now
The common technology of encapsulation.
The quality of eutectic bonding is affected by various factors, including: metal proportioning, bonding pressure, bonding temperature and
Bonding time etc..Test to obtain the result after stable bonding quality needs para-linkage.Traditional test mode
Including shear stress test, section Electron microscopy etc., both means are required for ability after sample structure destruction
Obtain the information of bonding quality.A kind of alloying level that can detect eutectic bonding in the case of not destroying sample with
And the method for quality is particularly important.
Summary of the invention
It is an object of the invention to provide a kind of structure for detecting alloying level in bonding and method, to solve eutectic
The non-damaged data problem of bonding quality.
The present invention for achieving the above object, adopts the following technical scheme that
It is a kind of for detecting the structure of alloying level in eutectic bonding, it is characterised in that: described structure is included in eutectic key
Closing the test electrode being connected on substrate with bonded layer, described test electrode is arranged between bonded layer and bonded substrate, covers
Bonded layer region, described test electrode is drawn lead pad.
It is further characterized by described test electrode material is conductive metal or compound, can be Ti, Au, W,
Ni etc..
Described electrode can be to comprise two kinds of forms:
One is: described test electrode is multiple, is distributed on below bonded layer, and described each test electrode is at diverse location
Draw multiple described lead pad.
Another kind is: described test electrode is one, is arranged on below bonded layer, and described lead pad is at described test electricity
Pole homonymy is equidistantly drawn.
Structure and the method for detecting alloying level in bonding that the present invention provides, by directly making on bonding ring
Electrode and test structure, can the independent alloy situation in any region on test wafer, process uniformity is estimated；
The present invention is not affected by substrate material, can carry out alloying analysis under any substrate or substrate top surface material context；
The test connection of electrode resistance of the present invention uses four probe method and resistance matching type, can measure bonding ring conductance accurately
Rate, precision and resolution are all far above prior art.
Accompanying drawing explanation
Fig. 1 is inventive structure schematic diagram.
Fig. 2 is the first scheme that test electrode is arranged on substrate.
Fig. 3 is the first scheme that test electrode is arranged on substrate.
Detailed description of the invention
A kind of for detecting the structure of alloying level in eutectic bonding, it is included on eutectic bonding substrate 1
The test electrode 3 being connected with bonded layer 2, described test electrode 3 is arranged between bonded layer 2 and bonded substrate 1, covers
Bonded layer 2 region, described test electrode is drawn lead pad 4.
Described electrode can be to comprise two kinds of forms:
One is as shown in Figure 2: described test electrode 3 is multiple, is distributed on below bonded layer 2, described each test electricity
8 described lead pad 4 are drawn at diverse location in pole 3.The electricity of bonded interface is detected respectively by four line Kelvin's methods of testing
The resistance value of alloy after resistance and bonding, test I, II, IV, V or IV, V, VII, VIII lead pad can be entered
The resistance test of alloy after line unit conjunction, test I, IV, V, VIII lead pad can carry out the resistance value of bonded interface and survey
Examination.When the resistance of alloy is tested after being bonded, apply constant current at I, V (or IV, VIII) number pad respectively,
And measure II, IV (or V, VII) number pad voltage and can obtain resistance value accurately.Carrying out bonded interface resistance value
During test, on I, V pad, apply constant current respectively, and test voltage between IV, VIII pad and then can obtain
Obtaining bonded interface resistance value accurately, when bonding material alloying level ideal, interface resistance is relatively low, works as alloying level
Time the best, interface resistance there will be and significantly increases.
Another kind is as shown in Figure 3: described test electrode 3 is one, is arranged on below bonded layer 2, described lead pad 4
Equidistantly draw at described test electrode 3 homonymy.By resistance matching type detection test electrode resistance, i.e. by test arbitrarily
Between two adjacent legs pads 4, resistance value is also bonded eutectic from resistance value ratio between other pads to obtaining different section
Whether effect there are differences.
Claims (3)
1. one kind is used for detecting the structure of alloying level in eutectic bonding, it is characterized in that: described structure is included on eutectic bonding substrate the test electrode being connected with bonded layer, described test electrode is arranged between bonded layer and bonded substrate, cover bonded layer region, described test electrode is drawn lead pad.
It is the most according to claim 1 for detecting the structure of alloying level in eutectic bonding, it is characterised in that: described test electrode material is conductive metal or compound.
It is the most according to claim 1 and 2 for detecting the structure of alloying level in eutectic bonding, it is characterised in that: described test electrode is multiple, is distributed on below bonded layer, and described each test electrode draws multiple described lead pad at diverse location.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410148635.6A CN103928364B (en) | 2014-04-14 | 2014-04-14 | A kind of for detecting the structure of alloying level in eutectic bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410148635.6A CN103928364B (en) | 2014-04-14 | 2014-04-14 | A kind of for detecting the structure of alloying level in eutectic bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103928364A CN103928364A (en) | 2014-07-16 |
| CN103928364B true CN103928364B (en) | 2016-09-28 |
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| CN201410148635.6A Active CN103928364B (en) | 2014-04-14 | 2014-04-14 | A kind of for detecting the structure of alloying level in eutectic bonding |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109632791B (en) * | 2018-11-12 | 2022-03-25 | 航天科工防御技术研究试验中心 | Method for evaluating bonding quality of semiconductor device bonding wire |
| CN111762754B (en) * | 2020-06-30 | 2024-06-18 | 上海华虹宏力半导体制造有限公司 | Test structure for measuring alignment deviation of eutectic bonding |
| CN115346961A (en) * | 2022-08-11 | 2022-11-15 | 福州大学 | Micron-sized metal bump array bonding test structure and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP1464084A1 (en) * | 2002-01-09 | 2004-10-06 | Infineon Technologies AG | Photodiode array and method for establishing a link between a first semiconductor element and a second semiconductor element |
| CN100369228C (en) * | 2004-12-24 | 2008-02-13 | 中国电子科技集团公司第二十四研究所 | Method for detecting interface defects of silicon bonding wafer |
| CN2780733Y (en) * | 2005-04-15 | 2006-05-17 | 华中科技大学 | Induction heating sealing linkage device |
| JP2008098384A (en) * | 2006-10-11 | 2008-04-24 | Denso Corp | Method and device for manufacturing semiconductor package |
| CN103278270B (en) * | 2013-06-05 | 2014-12-03 | 厦门大学 | Silicon-glass micro pressure sensor chip of island membrane self-packaging structure and manufacturing method |
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| CN103928364A (en) | 2014-07-16 |
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