CN103928364A - Structure for detecting alloying degree in eutectic bonding - Google Patents
Structure for detecting alloying degree in eutectic bonding Download PDFInfo
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- CN103928364A CN103928364A CN201410148635.6A CN201410148635A CN103928364A CN 103928364 A CN103928364 A CN 103928364A CN 201410148635 A CN201410148635 A CN 201410148635A CN 103928364 A CN103928364 A CN 103928364A
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- bonding
- substrate
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- eutectic bonding
- test electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a structure for detecting the alloying degree in eutectic bonding. The structure is characterized by comprising a testing electrode; the testing electrode is located on a eutectic bonding substrate and connected with a bonding layer, the testing electrode is arranged between a bonding layer and the eutectic bonding substrate and covers a bonding layer area, and a lead bonding pad is led out from the testing electrode. By means of the structure and method for detecting the alloying degree in eutectic bonding, the electrode and a testing structure are directly manufactured on a bonding ring, alloying conditions in any areas on a wafer can be independently tested, and the process uniformity can be evaluated. The structure is not influenced by materials of the substrate, and alloying analysis can be carried out under any material condition of the substrate or the upper surface of the substrate. By means of the structure, the four-probe method and the resistance comparison method are adopted in the electrode resistance testing connecting method, the conductivity of the bonding ring can be accurately measured, and the accuracy and the resolution ratio are both more higher than those in the prior art.
Description
Technical field
The present invention relates to a kind of structure for detection of bonding quality, relate in particular to a kind of structure and method for detection of alloying level in eutectic bonding.
Background technology
Bonding is a kind of mode that two kinds of solids mutually combine by the mode of " key ", and atom can use electronics bonding in a different manner, comprises covalent bond, ionic bond and metallic bond.
Bonding techniques conventional in modern semiconductor technology comprises: electrostatic bonding, thermocompression bonding, glass sintering bonding, Direct Bonding, eutectic bonding, organic bonding bonding etc.Wherein thereby eutectic bonding is a kind of technology that forms low-melting alloy by two or more metals under certain proportion and realize bonding.Eutectic bonding have be not subject to backing material restriction, be subject to bonding face roughness affect little, there is the advantages such as good hermetic properties, technological temperature are low, be the common technology of transducer wafer scale bonding packaging now.
The quality of eutectic bonding is subject to the impact of many factors, comprising: metal proportioning, bonding pressure, bonding temperature and bonding time etc.Need the result after para-linkage to test in order to obtain stable bonding quality.Traditional test mode comprises shear stress test, section Electron microscopy etc., and these two kinds of means all need after sample structure destruction, just to obtain the information of bonding quality.Therefore a kind ofly can in the situation that not destroying sample, detect the alloying level of eutectic bonding and the method for quality is very important.
Summary of the invention
The object of the present invention is to provide a kind of structure and method for detection of alloying level in bonding, to solve the non-destructive test problems of eutectic bonding quality.
The present invention for achieving the above object, adopts following technical scheme:
A kind of structure for detection of alloying level in eutectic bonding, it is characterized in that: described structure is included in the test electrode being connected with bonded layer on eutectic bonding substrate, described test electrode is arranged between bonded layer and bonded substrate, cover bonded layer region, on described test electrode, draw lead pad.
It is further characterized in that: described test electrode material is conductive metal or compound, can be Ti, Au, W, Ni etc.
Described electrode can comprise two kinds of forms:
One is: described test electrode is multiple, is distributed on bonded layer below, and described each test electrode is drawn multiple described lead pad at diverse location.
Another kind is: described test electrode is one, is arranged on bonded layer below, and described lead pad is equidistantly drawn at described test electrode homonymy.
Structure and method for detection of alloying level in bonding provided by the invention, by directly make electrode and test structure on bonding ring, the alloy situation in any region on test wafer, assesses process uniformity separately; The present invention is not subject to the impact of substrate material, can in any substrate or substrate top surface material situation, carry out alloying analysis; The test connection of electrode resistance of the present invention adopts four probe method and resistance method of comparison, can measure accurately bonding ring conductivity, and precision and resolution are all far above prior art.
Brief description of the drawings
Fig. 1 is invention structural representation.
Fig. 2 is the first scheme that test electrode is arranged on substrate.
Fig. 3 is the first scheme that test electrode is arranged on substrate.
Embodiment
A kind of structure for detection of alloying level in eutectic bonding as shown in Figure 1, be included in the test electrode 3 being connected with bonded layer 2 on eutectic bonding substrate 1, described test electrode 3 is arranged between bonded layer 2 and bonded substrate 1, cover bonded layer 2 regions, on described test electrode, draw lead pad 4.
Described electrode can comprise two kinds of forms:
One is as shown in Figure 2: described test electrode 3 is multiple, is distributed on bonded layer 2 belows, and described each test electrode 3 is drawn 8 described lead pad 4 at diverse location.Detect respectively the resistance value of alloy after the resistance value of bonded interface and bonding by four line Kelvin methods of testing, test I, II, IV, V or IV, V, VII, VIII lead pad can be carried out the resistance test of alloy after bonding, and test I, IV, V, VIII lead pad can be carried out the resistance value test of bonded interface.In resistance when test of carrying out alloy after bonding, respectively at I, V(or IV, VIII) number pad applies constant current, and measures II, IV(or V, VII) number pad voltage can obtain resistance value accurately.In the time carrying out the test of bonded interface resistance value, on I, V pad, apply constant current respectively, and between test I V, VIII pad, voltage can obtain bonded interface resistance value accurately, in the time that bonding material alloying level is desirable, interface resistance is lower, and in the time that alloying level is not good, interface resistance there will be and enlarges markedly.
Another kind is as shown in Figure 3: described test electrode is one, is arranged on bonded layer below, and described lead pad is equidistantly drawn at described test electrode homonymy.Detect test electrode resistance by resistance method of comparison, by test between any two adjacent legs pads resistance value and and other pads between resistance value ratio whether there are differences obtaining different section bonding eutectic effects.
Claims (4)
1. the structure for detection of alloying level in eutectic bonding, it is characterized in that: described structure is included in the test electrode being connected with bonded layer on eutectic bonding substrate, described test electrode is arranged between bonded layer and bonded substrate, cover bonded layer region, on described test electrode, draw lead pad.
2. the structure for detection of alloying level in eutectic bonding according to claim 1, is characterized in that: described test electrode material is conductive metal or compound.
3. the structure for detection of alloying level in eutectic bonding according to claim 1 and 2, is characterized in that: described test electrode is multiple, is distributed on bonded layer below, and described each test electrode is drawn multiple described lead pad at diverse location.
4. the structure for detection of alloying level in eutectic bonding according to claim 1 and 2, is characterized in that: described test electrode is one, is arranged on bonded layer below, and described lead pad is equidistantly drawn at described test electrode homonymy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410148635.6A CN103928364B (en) | 2014-04-14 | 2014-04-14 | A kind of for detecting the structure of alloying level in eutectic bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410148635.6A CN103928364B (en) | 2014-04-14 | 2014-04-14 | A kind of for detecting the structure of alloying level in eutectic bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103928364A true CN103928364A (en) | 2014-07-16 |
| CN103928364B CN103928364B (en) | 2016-09-28 |
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| CN201410148635.6A Active CN103928364B (en) | 2014-04-14 | 2014-04-14 | A kind of for detecting the structure of alloying level in eutectic bonding |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109632791A (en) * | 2018-11-12 | 2019-04-16 | 航天科工防御技术研究试验中心 | A kind of bonding quality assessment method of semiconductor devices bonding wire |
| CN111762754A (en) * | 2020-06-30 | 2020-10-13 | 上海华虹宏力半导体制造有限公司 | Test structure for measuring eutectic bonding alignment deviation |
Citations (5)
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|---|---|---|---|---|
| WO2003058720A1 (en) * | 2002-01-09 | 2003-07-17 | Infineon Technologies Ag | Photodiode array and method for establishing a link between a first semiconductor element and a second semiconductor element |
| CN1632936A (en) * | 2004-12-24 | 2005-06-29 | 中国电子科技集团公司第二十四研究所 | Method for detecting interface defects of silicon bonding wafer |
| CN2780733Y (en) * | 2005-04-15 | 2006-05-17 | 华中科技大学 | Induction heating sealing linkage device |
| US20080090313A1 (en) * | 2006-10-11 | 2008-04-17 | Denso Corporation | Manufacturing device of semiconductor package and manufacturing method of semiconductor package |
| CN103278270A (en) * | 2013-06-05 | 2013-09-04 | 厦门大学 | Silicon-glass micro pressure sensor chip of island membrane self-packaging structure and manufacturing method |
-
2014
- 2014-04-14 CN CN201410148635.6A patent/CN103928364B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003058720A1 (en) * | 2002-01-09 | 2003-07-17 | Infineon Technologies Ag | Photodiode array and method for establishing a link between a first semiconductor element and a second semiconductor element |
| CN1632936A (en) * | 2004-12-24 | 2005-06-29 | 中国电子科技集团公司第二十四研究所 | Method for detecting interface defects of silicon bonding wafer |
| CN2780733Y (en) * | 2005-04-15 | 2006-05-17 | 华中科技大学 | Induction heating sealing linkage device |
| US20080090313A1 (en) * | 2006-10-11 | 2008-04-17 | Denso Corporation | Manufacturing device of semiconductor package and manufacturing method of semiconductor package |
| CN103278270A (en) * | 2013-06-05 | 2013-09-04 | 厦门大学 | Silicon-glass micro pressure sensor chip of island membrane self-packaging structure and manufacturing method |
Non-Patent Citations (1)
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| 王亚平，卢柯: "非晶态合金晶化过程的高精度电阻监测研究", 《中国科学（E辑）》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109632791A (en) * | 2018-11-12 | 2019-04-16 | 航天科工防御技术研究试验中心 | A kind of bonding quality assessment method of semiconductor devices bonding wire |
| CN109632791B (en) * | 2018-11-12 | 2022-03-25 | 航天科工防御技术研究试验中心 | Method for evaluating bonding quality of semiconductor device bonding wire |
| CN111762754A (en) * | 2020-06-30 | 2020-10-13 | 上海华虹宏力半导体制造有限公司 | Test structure for measuring eutectic bonding alignment deviation |
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| Publication number | Publication date |
|---|---|
| CN103928364B (en) | 2016-09-28 |
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