CN102759638B - Method for testing metal layer by utilizing atomic force nanoprobe - Google Patents
Method for testing metal layer by utilizing atomic force nanoprobe Download PDFInfo
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- CN102759638B CN102759638B CN201210264858.XA CN201210264858A CN102759638B CN 102759638 B CN102759638 B CN 102759638B CN 201210264858 A CN201210264858 A CN 201210264858A CN 102759638 B CN102759638 B CN 102759638B
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Abstract
The invention provides a method for testing a metal layer by utilizing an atomic force nanoprobe. The method comprises the following steps of: grinding a sample to a metal layer at a point to be tested; uniformly covering the ground sample with an organic mask layer; removing the organic mask layer on the metal layer at the point to be tested; covering the metal layer at the point to be tested with a high-hardness conducting material; and removing the organic mask on the sample by using an organic solvent. According to the method for testing the metal layer by utilizing the atomic force nanoprobe, the difficulty that the atomic force nanoprobe (AFP) cannot easily pass through the metal layer test sample is effectively solved.
Description
Technical field
The present invention relates to SIC (semiconductor integrated circuit) field, and in particular to a kind of method utilizing atomic force nano probe to test metal level.
Background technology
Atomic force microscope (Atomic Force Microscope, AFM), a kind of analytical instrument that can be used to study the solid material surface structure comprising insulator.It studies surface structure and the character of material by the atomic weak interatomic interaction force detected between testing sample surface and a miniature force sensitive element.Micro-cantilever one end of a pair faint power extreme sensitivity is fixed, the small needle point of the other end close to sample, at this moment it will with its interaction, acting force will make micro-cantilever generation deformation or motion state change.During scanning samples, utilize sensor to detect these changes, just can obtain distribution of forces information, thus obtain surface structure information with nanometer resolution.
In the electronics industry of today, that runs to make product is faster, and more stable, the design and production of SIC (semiconductor integrated circuit) is more and more toward high centralization, and high fine degree is seted out.And in the past used semiconductor device failure analytical instrument correctly effectively cannot measure the parameters of electric power of small other structure of transistor AND gate.
Atomic force nano probe (AFP) enables user to other structure of the transistor AND gate of 65 to 32 nanometers, carries out rapidly detection and the identification of parameters of electric power.Atomic force nano probe adopts multiple special atomic force microscope gauge head, fast and accurately locate failure transistor carry out the contact of pole low coverage terminal.
The method of existing atomic force nano probe test metal level allows the metal level of sample exceed oxide layer 20 ~ 30nm with reactive ion orientation etching (RIE), and then test.But sample prepared by this method, cannot test out result accurately, reason is as follows:
Owing to needing contact imaging when atomic force nano probe (AFP) is analyzed sample, and probe needs and sample contacts during test, but the metal wire of copper or aluminium material is very soft relative to the probe tip of tungsten, therefore probe tip can scratch metal level when contact imaging, during test, probe tip can fall into into metal level.And scratch metal level and can cause short circuit between metal wire, during test, probe tip falls into into metal level and measurement data can be made not have repeatability, and test result is unreliable.
Summary of the invention
The present invention proposes a kind of method utilizing atomic force nano probe to test metal level, efficiently solves the difficult problem that atomic force nano probe (AFP) is not easy to be tested by metal level sample.
In order to achieve the above object, the present invention proposes a kind of method utilizing atomic force nano probe to test metal level, comprises the following steps:
Sample is ground to tested point metal level;
Uniform fold one deck organic mask layer on described ground sample;
Remove the organic mask layer on described sample tested point metal level;
High rigidity conductive material is covered on tested point metal level;
With an organic solvent remove the organic mask on described sample.
Further, the method adopts the organic mask layer on focused ion beam removal tested point metal level.
Further, described high rigidity conductive material is gold, cobalt or tungsten.
Further, the method adopts the method for focused ion beam or sputter to be covered on tested point metal level by described high rigidity conductive material.
Further, the thickness of described etch layer layer is 50 dust ~ 500 dusts.
Further, after the method is also included in and with an organic solvent removes organic mask, the described sample of light mill in deionized water.
Further, the method is when removing described etch layer with organic solvent, and described sample is coated with one of organic mask and faces down.
The present invention proposes a kind of method utilizing atomic force nano probe to test metal level, on metal level to be measured, the larger material of one deck hardness is plated with mask method, probe is made to contact with metal level is stable thus is beneficial to test, the present invention is by first covering one deck etch layer layer at sample surfaces, then remove needing the etch layer layer plated above the metal of other materials by focused ion beam, finally sample is plated the larger material of one deck hardness, finally sample is put in organic solvent and etch layer layer is dissolved, present invention efficiently solves the difficult problem that atomic force nano probe (AFP) is not easy to be tested by metal level sample.
Accompanying drawing explanation
Figure 1 shows that the atomic force nano probe that utilizes of present pre-ferred embodiments tests the method flow diagram of metal level.
Fig. 2 ~ Figure 6 shows that the atomic force nano probe that utilizes of present pre-ferred embodiments tests the structural representation of metal level method.
Embodiment
In order to more understand technology contents of the present invention, institute's accompanying drawings is coordinated to be described as follows especially exemplified by specific embodiment.
Please refer to Fig. 1, Figure 1 shows that the atomic force nano probe that utilizes of present pre-ferred embodiments tests the method flow diagram of metal level.The present invention proposes a kind of method utilizing atomic force nano probe to test metal level, comprises the following steps:
Step S100: sample is ground to tested point metal level;
Step S200: uniform fold one deck organic mask layer on described ground sample;
Step S300: remove the organic mask layer on described sample tested point metal level;
Step S400: high rigidity conductive material is covered on tested point metal level;
Step S500: with an organic solvent remove the organic mask on described sample.
Please refer to Fig. 2 ~ Fig. 6 again, Fig. 2 ~ Figure 6 shows that the atomic force nano probe that utilizes of present pre-ferred embodiments tests the structural representation of metal level method.
According to present pre-ferred embodiments, first sample is ground to tested point metal level, please refer to Fig. 2, in the present embodiment for exposing the copper metal layer 200 in oxide substrate 100.
Please refer to Fig. 3 again, uniform fold one deck organic mask layer on described ground sample, in the present embodiment for cover one deck organic mask layer 300 on said structure, the thickness of described organic mask layer 300 is 50 dust ~ 500 dusts.When covering organic mask layer 300, it is simultaneously also not easily too thick that thickness can not be less than 50A, too can by metal levels all on sample all short circuits during other conductive material of flash plating, too thickly cannot see that in focused ion beam (FIB) metal wire of lower floor is unfavorable for next step operation.
Please refer to Fig. 4, remove the organic mask layer on described sample tested point metal level, in the present embodiment, the method adopts the organic mask layer 300 on focused ion beam removal tested point metal level, 2., when removing the organic mask layer 300 on to be measured some metal level by focused ion beam (FIB), copper metal layer 200 should be hurt as little as possible.
Please refer to Fig. 5 again, high rigidity conductive material is covered on tested point metal level, be that the method adopts the method for focused ion beam or sputter to be covered on tested point metal level by described high rigidity conductive material 400 by high rigidity conductive material 400 (such as conductions such as gold, cobalt or tungsten and the large material of hardness) uniform fold over the structure in the present embodiment.
Please refer to Fig. 6, with an organic solvent remove the organic mask on described sample, in the present embodiment for removing organic mask 300, high rigidity conductive material 400 on remaining described copper metal layer 200, the method is when removing described etch layer 300 with organic solvent, described sample is coated with one of organic mask 300 and faces down, and allows conductive material lack the sample surfaces that falls back as far as possible.
Further, after the method is also included in and with an organic solvent removes organic mask, the described sample of light mill in deionized water.
In sum, the present invention proposes a kind of method utilizing atomic force nano probe to test metal level, on metal level to be measured, the larger material of one deck hardness is plated with mask method, probe is made to contact with metal level is stable thus is beneficial to test, the present invention is by first covering one deck etch layer layer at sample surfaces, then remove needing the etch layer layer plated above the metal of other materials by focused ion beam, finally sample is plated the larger material of one deck hardness, finally sample is put in organic solvent and etch layer layer is dissolved, present invention efficiently solves the difficult problem that atomic force nano probe (AFP) is not easy to be tested by metal level sample.
Although the present invention with preferred embodiment disclose as above, so itself and be not used to limit the present invention.Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (7)
1. utilize atomic force nano probe to test a method for metal level, it is characterized in that, comprise the following steps:
Sample is ground to tested point metal level;
Uniform fold one deck organic mask layer on described ground sample;
Remove the organic mask layer on described sample tested point metal level;
Covered by high rigidity conductive material on tested point metal level, wherein, the hardness of described high rigidity conductive material is higher than described tested point metal level;
With an organic solvent remove the organic mask on described sample.
2. the method utilizing atomic force nano probe to test metal level according to claim 1, is characterized in that, the method adopts the organic mask layer on focused ion beam removal tested point metal level.
3. the method utilizing atomic force nano probe to test metal level according to claim 1, it is characterized in that, described tested point metal level is copper metal layer, and described high rigidity conductive material is gold, cobalt or tungsten.
4. the method utilizing atomic force nano probe to test metal level according to claim 1, is characterized in that, the method adopts the method for focused ion beam or sputter to be covered on tested point metal level by described high rigidity conductive material.
5. the method utilizing atomic force nano probe to test metal level according to claim 1, it is characterized in that, the thickness of described etch layer layer is 50 dust ~ 500 dusts.
6. the method utilizing atomic force nano probe to test metal level according to claim 1, is characterized in that, after the method is also included in and with an organic solvent removes organic mask, and the described sample of light mill in deionized water.
7. the method utilizing atomic force nano probe to test metal level according to claim 1, it is characterized in that, the method is when removing described etch layer with organic solvent, and described sample is coated with one of organic mask and faces down.
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| CN103364594A (en) * | 2013-06-26 | 2013-10-23 | 上海华力微电子有限公司 | Sample applied to atomic force nano probe test and manufacturing method thereof |
| CN117233189B (en) * | 2023-11-16 | 2024-02-02 | 南京泛铨电子科技有限公司 | Method for increasing conductivity of material analysis FIB test piece |
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| CN1797702A (en) * | 2004-12-23 | 2006-07-05 | 鸿富锦精密工业（深圳）有限公司 | Method for forming quantum point |
| CN101410754A (en) * | 2006-03-31 | 2009-04-15 | 索尼德国有限责任公司 | A method of applying a pattern of metal, metal oxide and/or semiconductor material on a substrate |
| CN101378033A (en) * | 2007-08-31 | 2009-03-04 | 塔工程有限公司 | Method of forming thin film metal conductive lines |
| CN102353817A (en) * | 2011-06-30 | 2012-02-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Probe of conducting atomic force microscope and measuring methods employing probe |
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